US20050179097A1 - Atomic layer deposition of CMOS gates with variable work functions - Google Patents

Atomic layer deposition of CMOS gates with variable work functions Download PDF

Info

Publication number
US20050179097A1
US20050179097A1 US11038730 US3873005A US2005179097A1 US 20050179097 A1 US20050179097 A1 US 20050179097A1 US 11038730 US11038730 US 11038730 US 3873005 A US3873005 A US 3873005A US 2005179097 A1 US2005179097 A1 US 2005179097A1
Authority
US
Grant status
Application
Patent type
Prior art keywords
gate
metallic conductor
cmos device
drain
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US11038730
Inventor
Leonard Forbes
Kie Ahn
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Technology Inc
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Images

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232Field-effect technology
    • H01L21/8234MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238Complementary field-effect transistors, e.g. CMOS
    • H01L21/823828Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in H01L21/20 - H01L21/268
    • H01L21/28008Making conductor-insulator-semiconductor electrodes
    • H01L21/28017Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28088Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a composite, e.g. TiN
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
    • H01L21/28556Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H01L21/28562Selective deposition
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4966Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2

Abstract

According to one aspect, a CMOS device includes a PMOS transistor and an NMOS transistor, where each transistor includes a source, a drain, a channel region between the source and the drain, and a gate separated from the channel region by a gate insulator. The gate of the PMOS transistor includes a metallic conductor formed by atomic layer deposition and engineered to provide the gate with a first composition having a first work function. The gate of the NMOS transistor includes a metallic conductor formed by atomic layer deposition and engineered to provide the gate with a second composition having a second work function such that the NMOS transistor and the PMOS transistor have threshold voltages of approximately the same magnitude. At least one of the gates includes a ternary metal conductor formed by atomic layer deposition.

Description

    CROSS-REFERENCE TO RELATED APPLICATION(S)
  • This application is a divisional of U.S. patent application Ser. No. 10/754,842, filed Jan. 9, 2004; which is a continuation-in-part of U.S. patent application Ser. No. 10/225,605, filed Aug. 22, 2002; the specifications of which are incorporated herein by reference.
  • FIELD OF THE INVENTION
  • The present invention relates generally to semiconductor integrated circuits and, more particularly, to atomic layer deposition of CMOS gates with variable work functions.
  • BACKGROUND OF THE INVENTION
  • Conventional n-type doped polysilicon gate electrodes in CMOS technology have two problems. Firstly, the polysilicon is conductive but there can still be a surface region which can be depleted of carriers under bias conditions. This appears as an extra gate insulator thickness and is commonly referred to as gate depletion and contributes to the equivalent oxide thickness. While this region is thin, in the order of a few angstroms (Å), it becomes appreciable as gate oxide thicknesses are reduced below 2 nm or 20 Å. Another problem is that the work function is not optimum for both n-MOS and p-MOS devices, historically this was compensated for by threshold voltage adjustment implantations. However, as the devices become smaller, with channel lengths of less than 1000 Å and consequently surface space charge regions of less than 100 Å, it becomes more and more difficult to do these implantations. Threshold voltage control becomes an important consideration as power supplies are reduced to the range of one volt. Optimum threshold voltages for both PMOS and NMOS transistors need to have a magnitude of around 0.3 Volts.
  • A solution to the polysilicon gate depletion problem is to replace the semiconducting gate material with a metal or highly conductive metallic nitrides. As with any new circuit material, the gate electrode must be chemically and thermally compatible with both the transistor and the process. Different metals can be employed or the properties of the conductive nitride modified to provide an optimum work function.
  • The work function of the gate electrode—the energy needed to extract an electron—must be compatible with the barrier height of the semiconductor material. For PMOS transistors, the required work function is about 5.0 eV. Achieving the lower work function needed by NMOS transistors, about 4.1 eV, has been more difficult. FIGS. 1A and 1B illustrate the desired energy band diagrams and work functions for NMOS and PMOS transistors respectively. Refractory metals like titanium (Ti) and tantalum (Ta) oxidize rapidly under typical process conditions. One proposed solution to the problem relies on a “tuned” ruthenium-tantalum (Ru—Ta) alloy, which is stable under process conditions. When the Ta concentration is below 20 percent, the alloy's electrical properties resemble Rhubidium (Ru), a good PMOS gate electrode. When the Ta concentration is between 40 percent and 54 percent, the alloy is a good NMOS gate electrode.
  • Promising candidates include metallic nitrides, such as tantalum nitride (TaN) and titanium nitride (TiN). Tantalum nitride, titanium nitride, and tungsten nitride are mid-gap work function metallic conductors commonly described for use in CMOS devices. The use of a mid-gap work function makes the threshold voltages of NMOS and PMOS devices symmetrical in that the magnitudes of the threshold voltages will be the same, but both will have a magnitude larger than that which is optimum with low power supply voltages.
  • Recently physical deposition, evaporation, has been used to investigate the suitability of some ternary metallic nitrides for use as gate electrodes, these included TiAlN and TaSiN. However, these were deposited by physical deposition not atomic layer deposition and only capacitor structures were fabricated, not transistors with gate structures.
  • Thus, there is an ongoing need for improved CMOS transistor design.
  • SUMMARY OF THE INVENTION
  • The above mentioned problems CMOS transistor design as well as other problems are addressed by the present invention and will be understood by reading and studying the following specification. This disclosure describes the use of atomic layer deposition of ternary metallic conductors where the composition and work function are varied to control the threshold voltage of both the NMOS and PMOS transistors in CMOS technology to provide optimum performance.
  • In particular, an embodiment of the present invention includes a transistor having a source region a drain region and a channel therebetween. A gate is separated from the channel region by a gate insulator. The gate includes a ternary metallic conductor formed by atomic layer deposition. In one embodiment the ternary metallic conductor includes Tantalum Aluminum Nitride (TaAlN). In one embodiment the ternary metallic conductor includes Titanium Aluminum Nitride (TiAlN). In one embodiment the ternary metallic conductor includes Titanium Silicon Nitride (TiSiN). In one embodiment the ternary metallic conductor includes Tungsten Aluminum Nitride (WAlN). In some embodiments the gate further includes a refractory metal formed on the ternary metallic conductor.
  • These and other embodiments, aspects, advantages, and features of the present invention will be set forth in part in the description which follows, and in part will become apparent to those skilled in the art by reference to the following description of the invention and referenced drawings or by practice of the invention. The aspects, advantages, and features of the invention are realized and attained by means of the instrumentalities, procedures, and combinations particularly pointed out in the appended claims.
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • FIGS. 1A and 1B illustrate the desired energy band diagrams and work functions for NMOS and PMOS transistors respectively.
  • FIG. 2 is a graph which plots electron affinity versus the energy bandgap for various metallic nitrides employed in various embodiments of the present invention.
  • FIG. 3 illustrates an embodiment of a transistor structure formed according to the teachings of the present invention.
  • FIG. 4 illustrates an embodiment of a memory device, utilizing ternary metallic gates formed by atomic layer deposition, according to embodiments of the present invention.
  • FIG. 5 is a block diagram of an electrical system, or processor-based system, utilizing ternary metallic gates formed by atomic layer deposition, according to embodiments of the present invention.
  • DETAILED DESCRIPTION
  • In the following detailed description of the invention, reference is made to the accompanying drawings which form a part hereof, and in which is shown, by way of illustration, specific embodiments in which the invention may be practiced.
  • In the drawings, like numerals describe substantially similar components throughout the several views. These embodiments are described in sufficient detail to enable those skilled in the art to practice the invention. Other embodiments may be utilized and structural, logical, and electrical changes may be made without departing from the scope of the present invention.
  • The terms wafer and substrate used in the following description include any structure having an exposed surface with which to form the integrated circuit (IC) structure of the invention. The term substrate is understood to include semiconductor wafers. The term substrate is also used to refer to semiconductor structures during processing, and may include other layers that have been fabricated thereupon. Both wafer and substrate include doped and undoped semiconductors, epitaxial semiconductor layers supported by a base semiconductor or insulator, as well as other semiconductor structures well known to one skilled in the art. The term conductor is understood to include semiconductors, and the term insulator is defined to include any material that is less electrically conductive than the materials referred to as conductors. The following detailed description is, therefore, not to be taken in a limiting sense, and the scope of the present invention is defined only by the appended claims, along with the full scope of equivalents to which such claims are entitled.
  • This disclosure describes the use of atomic layer deposition of ternary metallic conductors where the composition is varied and work function varied, see FIG. 2, to control the threshold voltage of both the NMOS and PMOS transistors in CMOS technology to provide optimum performance. In the several embodiments, these include the use of TaAlN, TiAlN, TiSiN, and WAlN as the ternary metallic conductors. Conventional highly doped polysilicon or refractory metals as W, Ta, Ti are deposited over the metallic conductors to give the gate structure shown in FIG. 3. As shown in FIG. 3, the transistor 301 structure includes a source region 302, a drain region 304, and a channel 306 therebetween. A gate 310 is separated from the channel region by a gate insulator 308. According to the teachings of the present invention, the gate 310 includes a ternary metallic conductor formed by atomic layer deposition. In one embodiment the ternary metallic conductor includes Tantalum Aluminum Nitride (TaAlN). In one embodiment the ternary metallic conductor includes Titanium Aluminum Nitride (TiAlN). In one embodiment the ternary metallic conductor includes Titanium Silicon Nitride (TiSiN). In one embodiment the ternary metallic conductor includes Tungsten Aluminum Nitride (WAlN). As shown in FIG. 3, in some embodiments the gate further includes a layer of highly conductive polysilicon 312, or alternatively a refractory metal layer 312, formed on the ternary metallic conductor 310. In embodiments having a refractory metal layer, the layer 312 includes for example, and not by way of limitation, refractory metals such as tantalum, titanium and tungsten.
  • Methods of Formation
  • Atomic Layer Deposition developed in the early 70s is a modification of CVD and can also be called as “alternately pulsed-CVD”. In this technique, gaseous precursors are introduced one at a time to the substrate surface, and between the pulses the reactor is purged with an inert gas or evacuated. In the first reaction step the precursor is saturatively chemisorbed at the substrate surface, and during the subsequent purging the precursor is removed from the reactor. In the second step, other precursor is introduced on the substrate and the desired films growth reaction takes place. After that the reaction byproducts and the precursor excess are purged out from the reactor. When the precursor chemistry is favorable, i.e. the precursor adsorb and react with each other aggressively, one ALD cycle can be preformed in less than one second in the properly designed flow type reactors.
  • The striking feature of ALD is the saturation of all the reaction and purging steps which makes the growth self-limiting. This brings the large area uniformity and conformality, the most important properties of ALD, as shown in very different cases, viz. planar substrates, deep trenches, and in the extreme cases of porous silicon and high surface area silica and alumina powers. Also the control of the film thickness is straightforward and can be made by simply calculating the growth cycles. ALD was originally developed to manufacture luminescent and dielectric films needed in electroluminescent displays, and a lot of effort has been put to the growth of doped zinc sulfide and alkaline earth metal sulfide films. Later ALD has been studied for the growth of different epitaxial II-V and II-VI films, nonepitaxial crystalline or amorphous oxide and nitride films are their multilayer structures.
  • There has been considerable interest towards the ALD growth of silicon and germanium films but due to the difficult precursor chemistry the results have not been very successful.
  • Reaction sequence ALD (RS-ALD) films have several unique and unmatched advantages:
      • Continuity at the interface avoiding poorly defined nucleating regions that are typical for CVD (<20 Å) and PVD (<50 Å) films. To achieve this continuity, the substrate surface must be activated to react directly with the first exposure of RS-ALD precursor.
      • Unmatched conformality over toughest substrate topologies with robust processes that can only be achieved with a layer-by-layer deposition technique.
      • Typically, low temperature and mildly oxidizing processes. This is thought to be a major advantage for gate insulator processing where deposition of non-silicon based dielectrics without oxidizing the substrate (with the oxidation-precursor) is a major concern.
      • RS-ALD ability to engineer multilayer laminate films, possibly down to monolayer resolution, as well as alloy composite films appear to be unique. This ability comes from the combination of being able to control deposition with monolayer precision and the ability to deposit continuous monolayers of amorphous films (that is unique to RS-ALD).
      • Unprecedented process robustness. RS-ALD processes are free of first wafer effects and the chamber dependence. Accordingly, RS-ALD processes will be easier to transfer from development to production and from 200 to 300 mm wafer size.
      • Thickness depends solely on the number of cycles. Thickness can be “dialed in” as a simple recipe change bearing no need for additional process development upon technology generation advance.
        Atomic Layer Deposition of Nitrides
  • Ta—N: Plasma-enhanced atomic layer deposition (PEALD) of tantalum nitride (Ta—N) thin films at a deposition temperature of 260° C. using hydrogen radicals as a reducing agent for Tertbutylimidotris(diethylamido) tantalum have been described. The PEALD yields superior Ta—N films with an electric resistivity of 400 μΩcm and no aging effect under exposure to air. The film density is higher than that of Ta—N films formed by typical ALD, in which NH3 is used instead of hydrogen radicals. In addition, the as-deposited films are not amorphous, but rather polycrystalline structure of cubit TaN. The density and crystallinity of the films increases with the pulse time of hydrogen plasma. The films are Ta-rich in composition and contain around 15 atomic % of carbon impurity. In the PEALD of Ta—N films, hydrogen radicals are used a reducing agent instead of NH3, which is used as a reactant gas in typical Ta—N ALD. Films are deposited on SiO2 (100 nm)/Si wafers at a deposition temperature of 260° C. and a deposition pressure of 133 Pa in a cold-walled reactor using (Net2)3 Ta=Nbut [tertbutylimidotris(diethylamido)tantalum, TBTDET] as a precursor of Ta. The liquid precursor is contained in a bubbler heated at 70° C. and carried by 35 sccm argon. One deposition cycle consist of an exposure to a metallorganic precursor of TBTDET, a purge period with Ar, and an exposure to hydrogen plasma, followed by another purge period with Ar. The Ar purge period of 15 seconds instead between each reactant gas pulse isolates the reactant gases from each other. To ignite and maintain the hydrogen plasma synchronized with the deposition cycle, a rectangular shaped electrical power is applied between the upper and lower electrode. The showerhead for uniform distribution of the reactant gases in the reactor, capacitively coupled with an rf (13.56 MHz) plasma source operated at a power of 100 W, is used as the upper electrode. The lower electrode, on which a wafer resides, is grounded. Film thickness and morphology were analyzed by field emission scanning electron microscopy.
  • Ta(Al)N(C): Technical work on thin films have been studied using TaCl5 or TaBr5 and NH3 as precursors and Al(CH3)3 as an additional reducing agent. The deposition temperature is varied between 250 and 400° C. The films contained aluminum, carbon, and chlorine impurities. The chlorine content decreased drastically as the deposition temperature is increased. The film deposited at 400° C. contained less than 4 atomic % chlorine and also had the lowest resistivity, 1300 μΩcm. Five different deposition processes with the pulsing orders TaCl5-TMA-NH3, TMA-TaCl5—NH3, TaBr5—NH3, TaBr5—Zn—3, and TaBr5-TMA-NH3 are used. TaCl5, TaBr5, and Zn are evaporated from open boats held inside the reactor. The evaporation temperatures for TaCl4, TaBr5, and Zn are 90, 140, 380° C., respectively. Ammonia is introduced into the reactor through a mass flowmeter, a needle valve, and a solenoid valve. The flow rate is adjusted to 14 sccm during a continuous flow. TMA is kept at a constant temperature of 16° C. and pulsed through the needle and solenoid valve. Pulse times are 0.5 s for TaCl5, TaBr5, NH3, and Zn whereas the pulse length of TMA is varied between 0.2 and 0.8 s. The length of the purge pulse is always 0.3 s. Nitrogen gas is used for the transportation of the precursor and as a purging gas. The flow rate of nitrogen is 400 sccm.
  • TiN: Atomic layer deposition (ALD) of amorphous TiN films on SiO2 between 170° C. and 210° C. has been achieved by the alternate supply of reactant sources, Ti[N(C2H5CH3)2]4 [tetrakis(ethylmethylamino)titanium: TEMAT] and NH3. These reactant sources are injected into the reactor in the following order: TEMAT vapor pulse, Ar gas pulse, NH3 gas pulse and Ar gas pulse. Film thickness per cycle saturated at around 1.6 monolayers per cycle with sufficient pulse times of reactant sources at 200° C. The results suggest that film thickness per cycle could exceed 1 ML/cycle in ALD, and are explained by the rechemisorption mechanism of the reactant sources. An ideal linear relationship between number of cycles and film thickness is confirmed.
  • TiAlN: Koo et al published paper on the study of the characteristics of TiAlN thin film deposited by atomic layer deposition method. The series of metal-Si—N barriers have high resistivity above 1000 μΩcm. They proposed another ternary diffusion barrier of TiAlN. TiAlN film exhibited a NaCl structure in spite of considerable Al contents. TiAlN films are deposited using the TiCl4 and dimethylaluminum hydride ethypiperdine (DMAH-EPP) as the titanium and aluminum precursors, respectively. TiCl4 is vaporized from the liquid at 13-15° C. and introduced into the ALD chamber, which is supplied by a bubbler using the Ar carrier gas with a flow rate of 30 sccm. The DMAH-EPP precursor is evaporated at 60° C. and introduced into the ALD chamber with the same flow rate of TiCl4. The NH3 gas is also used as a reactant gas and its flow rate is about 60 sccm. Ar purging gas is introduced for the complete separation of the source and reactant gases. TiAlN films are deposited at the temperatures between 350 and 400° C. and total pressure is kept constant to be two torr.
  • TiSiN: Metal-organic atomic-layer deposition (MOALD) achieves near-perfect step coverage step and control precisely the thickness and composition of grown thin films. A MOALD technique for ternary Ti—Si—N films using a sequential supply of Ti[N(CH3)2]4 [tetrakis (dimethylamido) titanium: TDMAT], silane (SiH4), and ammonia (NH3), has been developed and evaluated the Cu diffusion barrier characteristics of a 10 nm Ti—Si—N film with high-frequency C-V measurements. At 180° C. deposition temperature, silane is supplied separately in the sequence of the TDMAT pulse, silane pulse, and the ammonia pulse. The silicon content is the deposited films and the deposition thickness per cycle remained almost constant at 18 at. % and 0.22 nm/cycle, even though the silane partial pressure varied from 0.27 to 13.3 Pa. Especially, the Si content dependence is strikingly different from the conventional chemical-vapor deposition. Step coverage is approximately 100% even on the 0.3 μm diameter hole with slightly negative slope and 10:1 aspect ratio.
  • WN: Tungsten nitride films have been deposited with the atomic layer control using sequential surface reactions. The tungsten nitride film growth is accomplished by separating the binary reaction 2WF6+NH3->W2N+3HF+9/2 F2 into two half-reactions. Successive application of the WF6 and NH3 half-reactions in an ABAB . . . sequence produced tungsten nitride deposition at substrate temperatures between 600 and 800 K. Transmission Fourier transform infrared (FTIR) spectroscopy monitored the coverage of WFx* and NHy* surface species on high surface area particles during the WF6 and NH3 half-reactions. The FTIR spectroscope results demonstrated the WF6 and NH3 half-reactions are complete and self-limiting at temperatures >600 K. In situ spectroscopic ellipsometry monitored the film growth on Si(100) substrate vs. temperature and reactant exposure. A tungsten nitride deposition rate of 2.55 Å/AB cycle is measured at 600-800 K for WF6 and NH3 reactant exposure >3000 L and 10,000 L, respectively. X-ray photoelectron spectroscopy depth-profiling experiments determined that the films had a W2N stoichiometry with low C and O impurity concentrations. X-ray diffraction investigations revealed that the tungsten nitride films are microcrystalline. Atomic force microscopy measurements of the deposited films observed remarkably flat surface indicating smooth film growth. These smooth tungsten nitride films deposited with atomic layer control should be used as diffusion control for Cu on contact and via holes.
  • AlN: Aluminum nitride (AlN) has been grown on porous silica by atomic layer chemical vapor deposition (ALCVD) from trimethylaluminum (TMA) and ammonia precursors. The ALCVD growth is based on alternating, separated, saturating reactions of the gaseous precursors with the solid substrates. TMA and ammonia are reacted at 423 and 623 Kelvin (K), respectively, on silica which has been dehydroxylated at 1023 K pretreated with ammonia at 823 K. The growth in three reaction cycles is investigated quantitatively by elemental analysis, and the surface reaction products are identified by IR and solid state and Si NMR measurements. Steady growth of about 2 aluminum atoms/nm2 silica/reaction cycle is obtained. The growth mainly took place through (I) the reaction of TMA which resulted in surface Al—Me and Si—Me groups, and (II) the reaction of ammonia which replaced aluminium-bonded methyl groups with amino groups. Ammonia also reacted in part with the silicon-bonded methyl groups formed in the dissociated reaction of TMA with siloxane bridges. TMA reacted with the amino groups, as it did with surface silanol groups and siloxane bridges. In general, the Al—N layer interacted strongly with the silica substrates, but in the third reaction cycle AlN-type sites may have formed.
  • Devices
  • In FIG. 4 a memory device is illustrated according to the teachings of the present invention. The memory device 440 contains a memory array 442, row and column decoders 444, 448 and a sense amplifier circuit 446. The memory array 442 consists of a number of transistor cells 400, having ternary metallic gates formed by atomic layer deposition, whose word lines 480 and bit lines 460 are commonly arranged into rows and columns, respectively. The bit lines 460 of the memory array 442 are connected to the sense amplifier circuit 446, while its word lines 480 are connected to the row decoder 444. Address and control signals are input on address/control lines 461 into the memory device 440 and connected to the column decoder 448, sense amplifier circuit 446 and row decoder 444 and are used to gain read and write access, among other things, to the memory array 442.
  • The column decoder 448 is connected to the sense amplifier circuit 446 via control and column select signals on column select lines 462. The sense amplifier circuit 446 receives input data destined for the memory array 442 and outputs data read from the memory array 442 over input/output (I/O) data lines 463. Data is read from the cells of the memory array 442 by activating a word line 480 (via the row decoder 444), which couples all of the memory cells corresponding to that word line to respective bit lines 460, which define the columns of the array. One or more bit lines 460 are also activated. When a particular word line 480 and bit lines 460 are activated, the sense amplifier circuit 446 connected to a bit line column detects and amplifies the conduction sensed through a given transistor cell and transferred to its bit line 460 by measuring the potential difference between the activated bit line 460 and a reference line which may be an inactive bit line. Again, in the read operation the source region of a given cell is couple to a grounded sourceline or array plate (not shown). The operation of Memory device sense amplifiers is described, for example, in U.S. Pat. Nos. 5,627,785; 5,280,205; and 5,042,011, all assigned to Micron Technology Inc., and incorporated by reference herein.
  • FIG. 5 is a block diagram of an electrical system, or processor-based system, 500 utilizing transistor cells having ternary metallic gates formed by atomic layer deposition according to the teachings of the present invention. For example, by way of example and not by way of limitation, memory 512 is constructed in accordance with the present invention to have transistor cells having ternary metallic gates formed by atomic layer deposition. However, the invention is not so limited and the same can apply to transistors in the CPU, etc. The processor-based system 500 may be a computer system, a process control system or any other system employing a processor and associated memory. The system 500 includes a central processing unit (CPU) 502, e.g., a microprocessor, that communicates with the memory 512 and an I/O device 508 over a bus 520. It must be noted that the bus 520 may be a series of buses and bridges commonly used in a processor-based system, but for convenience purposes only, the bus 520 has been illustrated as a single bus. A second I/O device 510 is illustrated, but is not necessary to practice the invention. The processor-based system 500 can also includes read-only memory (ROM) 514 and may include peripheral devices such as a floppy disk drive 504 and a compact disk (CD) ROM drive 506 that also communicates with the CPU 502 over the bus 520 as is well known in the art.
  • It will be appreciated by those skilled in the art that additional circuitry and control signals can be provided, and that the processor-based system 500 has been simplified to help focus on the invention.
  • It will be understood that the embodiment shown in FIG. 5 illustrates an embodiment for electronic system circuitry in which the novel ternary metallic gate transistor cells, formed by atomic layer deposition, are used. The illustration of system 500, as shown in FIG. 5, is intended to provide a general understanding of one application for the structure and circuitry of the present invention, and is not intended to serve as a complete description of all the elements and features of an electronic system using the novel ternary metallic gate transistor cells, formed by atomic layer deposition. Further, the invention is equally applicable to any size and type of system 500 using the novel ternary metallic gate transistor cells, formed by atomic layer deposition, and is not intended to be limited to that described above. As one of ordinary skill in the art will understand, such an electronic system can be fabricated in single-package processing units, or even on a single semiconductor chip, in order to reduce the communication time between the processor and the memory device.
  • Applications containing the novel ternary metallic gate transistor cells, formed by atomic layer deposition as described in this disclosure, include electronic systems for use in memory modules, device drivers, power modules, communication modems, processor modules, and application-specific modules, and may include multilayer, multichip modules. Such circuitry can further be a subcomponent of a variety of electronic systems, such as a clock, a television, a cell phone, a personal computer, an automobile, an industrial control system, an aircraft, and others.
  • CONCLUSION
  • This disclosure describes the use of atomic layer deposition of ternary metallic conductors as transistor gates. The composition is varied and work function varied to control the threshold voltage of both the NMOS and PMOS transistors in CMOS technology to provide optimum performance.
  • It is to be understood that the above description is intended to be illustrative, and not restrictive. Many other embodiments will be apparent to those of skill in the art upon reviewing the above description. The scope of the invention should, therefore, be determined with reference to the appended claims, along with the full scope of equivalents to which such claims are entitled.

Claims (34)

  1. 1. A CMOS device, comprising:
    a PMOS transistor, including a source, a drain, a channel region between the source and the drain, and a gate separated from the channel region by a gate insulator, the gate including a metallic conductor formed by atomic layer deposition and engineered to provide the gate with a first composition having a first work function; and
    an NMOS transistor, including a source, a drain, a channel region between the source and the drain, and a gate separated from the channel region by a gate insulator, the gate including a metallic conductor formed by atomic layer deposition and engineered to provide the gate with a second composition having a second work function such that the NMOS transistor and the PMOS transistor have threshold voltages of approximately the same magnitude,
    wherein at least one of the gate for the PMOS transistor and the gate for the NMOS transistor includes a ternary metal conductor formed by atomic layer deposition.
  2. 2. The CMOS device of claim 1, wherein the ternary metallic conductor includes Tantalum Aluminum Nitride (TaAlN).
  3. 3. The CMOS device of claim 1, wherein the ternary metallic conductor includes Titanium Aluminum Nitride (TiAlN).
  4. 4. The CMOS device of claim 1, wherein the ternary metallic conductor includes Titanium Silicon Nitride (TiSiN).
  5. 5. The CMOS device of claim 1, wherein the ternary metallic conductor includes Tungsten Aluminum Nitride (WAlN).
  6. 6. The CMOS device of claim 1, further comprising a refractory metal on the ternary metallic conductor.
  7. 7. The CMOS device of claim 1, further comprising a conductive silicon layer on the ternary metallic conductor.
  8. 8. A CMOS device, comprising:
    a PMOS transistor, including a source, a drain, a channel region between the source and the drain, and a gate separated from the channel region by a gate insulator, the gate including a metallic conductor formed by atomic layer deposition and engineered to provide the gate with a first composition having a first work function; and
    an NMOS transistor, including a source, a drain, a channel region between the source and the drain, and a gate separated from the channel region by a gate insulator, the gate including a metallic conductor formed by atomic layer deposition and engineered to provide the gate with a second composition having a second work function such that the NMOS transistor and the PMOS transistor have threshold voltages of approximately the same magnitude,
    wherein one of the gate for the PMOS transistor and the gate for the NMOS transistor includes Tantalum Aluminum Nitride (TaAlN) formed by atomic layer deposition and the other one of the gate for the PMOS transistor and the gate for the NMOS transistor includes Tantalum Nitride (TaN) formed by atomic layer deposition.
  9. 9. The CMOS device of claim 8, further comprising a refractory metal on the ternary metallic conductor.
  10. 10. The CMOS device of claim 8, further comprising a conductive silicon layer on the ternary metallic conductor.
  11. 11. A CMOS device, comprising:
    a PMOS transistor, including a source, a drain, a channel region between the source and the drain, and a gate separated from the channel region by a gate insulator, the gate including a metallic conductor formed by atomic layer deposition and engineered to provide the gate with a first composition having a first work function; and
    an NMOS transistor, including a source, a drain, a channel region between the source and the drain, and a gate separated from the channel region by a gate insulator, the gate including a metallic conductor formed by atomic layer deposition and engineered to provide the gate with a second composition having a second work function such that the NMOS transistor and the PMOS transistor have threshold voltages of approximately the same magnitude,
    wherein one of the gate for the PMOS transistor and the gate for the NMOS transistor includes Titanium Aluminum Nitride (TiAlN) formed by atomic layer deposition and the other one of the gate for the PMOS transistor and the gate for the NMOS transistor includes Titanium Nitride (TiN) formed by atomic layer deposition.
  12. 12. The CMOS device of claim 11, further comprising a refractory metal on the ternary metallic conductor.
  13. 13. The CMOS device of claim 11, further comprising a conductive silicon layer on the ternary metallic conductor.
  14. 14. A CMOS device, comprising:
    a PMOS transistor, including a source, a drain, a channel region between the source and the drain, and a gate separated from the channel region by a gate insulator, the gate including a metallic conductor formed by atomic layer deposition and engineered to provide the gate with a first composition having a first work function; and
    an NMOS transistor, including a source, a drain, a channel region between the source and the drain, and a gate separated from the channel region by a gate insulator, the gate including a metallic conductor formed by atomic layer deposition and engineered to provide the gate with a second composition having a second work function such that the NMOS transistor and the PMOS transistor have threshold voltages of approximately the same magnitude,
    wherein one of the gate for the PMOS transistor and the gate for the NMOS transistor includes Tungsten Aluminum Nitride (WAlN) formed by atomic layer deposition and the other one of the gate for the PMOS transistor and the gate for the NMOS transistor includes Tungsten Nitride (WN) formed by atomic layer deposition.
  15. 15. The CMOS device of claim 14, further comprising a refractory metal on the ternary metallic conductor.
  16. 16. The CMOS device of claim 14, further comprising a conductive silicon layer on the ternary metallic conductor.
  17. 17. A CMOS device, comprising:
    a PMOS transistor on a first portion of a substrate having a first impurity doping level and first impurity doping type, including a first source region and drain region having a second impurity doping type, a first channel region having a second impurity doping level of the first impurity doping type disposed between the source and the drain regions to separate them, and a first gate separated from the first channel region by a first gate insulator having a first thickness, the first gate comprising a metallic conductor formed of a plurality of individual layers having a first composition with a first work function to act with the first thickness and second impurity doping level to provide the first gate with a first threshold voltage level;
    an NMOS transistor on a second portion of the substrate having a third impurity doping level and the second impurity doping type, including a source region and drain region having the first impurity doping type, a second channel region having a fourth impurity doping level of the second impurity doping type disposed between the source and drain regions to separate them, and a second gate separated from the second channel region by a second gate insulator having a second thickness, the second gate comprising a metallic conductor formed of a plurality of individual layers having a second composition with a second work function to act with the second thickness and fourth impurity doping level to provide the second gate with a second threshold voltage level; and
    wherein the NMOS transistor and the PMOS transistor have first and second threshold voltage levels of approximately the same magnitude.
  18. 18. The CMOS device of claim 17, wherein at least one of the first and second gates includes a ternary metallic conductor.
  19. 19. The CMOS device of claim 17, wherein one of the first and second gates includes a ternary metallic conductor and the other gate includes a binary metallic conductor.
  20. 20. The CMOS device of claim 17, further comprising the first impurity doping level equal to the second impurity doping level.
  21. 21. The CMOS device of claim 17, further comprising the third impurity doping level equal to the fourth impurity doping level.
  22. 22. The CMOS device of claim 17, further comprising the first gate insulator thickness equal to the second gate insulator thickness.
  23. 23. The CMOS device of claim 17, further comprising a conductive silicon layer disposed over the ternary metallic conductor.
  24. 24. The CMOS device of claim 17, further comprising a refractory metal layer disposed over the ternary metallic conductor.
  25. 25. The CMOS device of claim 18, wherein the ternary metallic conductor includes Tantalum Aluminum Nitride (TaAlN).
  26. 26. The CMOS device of claim 18, wherein the ternary metallic conductor includes Titanium Aluminum Nitride (TiAlN).
  27. 27. The CMOS device of claim 18, wherein the ternary metallic conductor includes Titanium Silicon Nitride (TiSiN).
  28. 28. The CMOS device of claim 18, wherein the ternary metallic conductor includes Tungsten Aluminum Nitride (WAlN).
  29. 29. The CMOS device of claim 19, wherein the binary metallic conductor includes Tungsten Nitride (WN).
  30. 30. A CMOS device, comprising:
    a PMOS transistor having a first gate comprising a laminated metallic conductor having at least two different material layers with a first varied composition having a first work function to provide a first threshold voltage level;
    an NMOS transistor having a second gate comprising a laminated metallic conductor having at least two different material layers with a second varied composition having a second work function to provide a second threshold voltage level; and
    wherein the first and second varied compositions provide the PMOS transistor and the NMOS transistor with first and second threshold voltage levels of approximately the same magnitude.
  31. 31. The CMOS device of claim 30, wherein forming at least one of the first and second gates includes a ternary metallic conductor.
  32. 32. The CMOS device of claim 30, wherein one of the first and second gates includes a ternary metallic conductor selected from the list including Tantalum Aluminum Nitride (TaAlN), Titanium Aluminum Nitride (TiAlN), Titanium Silicon Nitride (TiSiN), and Tungsten Aluminum Nitride (WAlN) and the other one of the first and second gates includes a binary metallic conductor.
  33. 33. The CMOS device of claim 30, further comprising a conductive silicon layer disposed above the ternary metallic conductor.
  34. 34. The CMOS device of claim 30, further comprising forming a refractory metal layer on the ternary metallic conductor.
US11038730 2002-08-22 2005-01-20 Atomic layer deposition of CMOS gates with variable work functions Abandoned US20050179097A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US10225605 US20040036129A1 (en) 2002-08-22 2002-08-22 Atomic layer deposition of CMOS gates with variable work functions
US10754842 US20040140513A1 (en) 2002-08-22 2004-01-09 Atomic layer deposition of CMOS gates with variable work functions
US11038730 US20050179097A1 (en) 2002-08-22 2005-01-20 Atomic layer deposition of CMOS gates with variable work functions

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11038730 US20050179097A1 (en) 2002-08-22 2005-01-20 Atomic layer deposition of CMOS gates with variable work functions

Publications (1)

Publication Number Publication Date
US20050179097A1 true true US20050179097A1 (en) 2005-08-18

Family

ID=31887038

Family Applications (4)

Application Number Title Priority Date Filing Date
US10225605 Abandoned US20040036129A1 (en) 2002-08-22 2002-08-22 Atomic layer deposition of CMOS gates with variable work functions
US10754842 Abandoned US20040140513A1 (en) 2002-08-22 2004-01-09 Atomic layer deposition of CMOS gates with variable work functions
US10929822 Active 2022-12-12 US7351628B2 (en) 2002-08-22 2004-08-30 Atomic layer deposition of CMOS gates with variable work functions
US11038730 Abandoned US20050179097A1 (en) 2002-08-22 2005-01-20 Atomic layer deposition of CMOS gates with variable work functions

Family Applications Before (3)

Application Number Title Priority Date Filing Date
US10225605 Abandoned US20040036129A1 (en) 2002-08-22 2002-08-22 Atomic layer deposition of CMOS gates with variable work functions
US10754842 Abandoned US20040140513A1 (en) 2002-08-22 2004-01-09 Atomic layer deposition of CMOS gates with variable work functions
US10929822 Active 2022-12-12 US7351628B2 (en) 2002-08-22 2004-08-30 Atomic layer deposition of CMOS gates with variable work functions

Country Status (6)

Country Link
US (4) US20040036129A1 (en)
EP (1) EP1532669A1 (en)
JP (1) JP2005536877A (en)
KR (1) KR100701542B1 (en)
CN (1) CN100359640C (en)
WO (1) WO2004019394A1 (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040036129A1 (en) * 2002-08-22 2004-02-26 Micron Technology, Inc. Atomic layer deposition of CMOS gates with variable work functions
US20040224484A1 (en) * 2003-05-07 2004-11-11 Ohalid Fareed Methods of growing nitride-based film using varying pulses
US20070034966A1 (en) * 2005-06-30 2007-02-15 Min-Joo Kim Dual gate CMOS semiconductor devices and methods of fabricating such devices
US20070164323A1 (en) * 2006-01-18 2007-07-19 Micron Technology, Inc. CMOS gates with intermetallic compound tunable work functions
US20070200243A1 (en) * 2005-07-20 2007-08-30 Micron Technology, Inc. Ald formed titanium nitride films
US20070287300A1 (en) * 2006-06-09 2007-12-13 Neal Rueger Method of forming a layer of material using an atomic layer deposition process
US20090045514A1 (en) * 2007-08-15 2009-02-19 Tokyo Electron Limited Semiconductor device containing an aluminum tantalum carbonitride barrier film and method of forming
US20090246952A1 (en) * 2008-03-28 2009-10-01 Tokyo Electron Limited Method of forming a cobalt metal nitride barrier film
US20100048009A1 (en) * 2008-08-25 2010-02-25 Tokyo Electron Limited Method of forming aluminum-doped metal carbonitride gate electrodes
US7709402B2 (en) 2006-02-16 2010-05-04 Micron Technology, Inc. Conductive layers for hafnium silicon oxynitride films
US20110210405A1 (en) * 2010-03-01 2011-09-01 Canon Anelva Corporation Metal nitride film, semiconductor device using the metal nitride film, and manufacturing method of semiconductor device

Families Citing this family (113)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7554829B2 (en) * 1999-07-30 2009-06-30 Micron Technology, Inc. Transmission lines for CMOS integrated circuits
US9139906B2 (en) * 2001-03-06 2015-09-22 Asm America, Inc. Doping with ALD technology
US8026161B2 (en) * 2001-08-30 2011-09-27 Micron Technology, Inc. Highly reliable amorphous high-K gate oxide ZrO2
US7068544B2 (en) * 2001-08-30 2006-06-27 Micron Technology, Inc. Flash memory with low tunnel barrier interpoly insulators
US6900122B2 (en) * 2001-12-20 2005-05-31 Micron Technology, Inc. Low-temperature grown high-quality ultra-thin praseodymium gate dielectrics
US7160577B2 (en) * 2002-05-02 2007-01-09 Micron Technology, Inc. Methods for atomic-layer deposition of aluminum oxides in integrated circuits
US7045430B2 (en) * 2002-05-02 2006-05-16 Micron Technology Inc. Atomic layer-deposited LaAlO3 films for gate dielectrics
US7135421B2 (en) * 2002-06-05 2006-11-14 Micron Technology, Inc. Atomic layer-deposited hafnium aluminum oxide
US7205218B2 (en) * 2002-06-05 2007-04-17 Micron Technology, Inc. Method including forming gate dielectrics having multiple lanthanide oxide layers
US7221017B2 (en) * 2002-07-08 2007-05-22 Micron Technology, Inc. Memory utilizing oxide-conductor nanolaminates
US7221586B2 (en) 2002-07-08 2007-05-22 Micron Technology, Inc. Memory utilizing oxide nanolaminates
US6790791B2 (en) * 2002-08-15 2004-09-14 Micron Technology, Inc. Lanthanide doped TiOx dielectric films
US6884739B2 (en) * 2002-08-15 2005-04-26 Micron Technology Inc. Lanthanide doped TiOx dielectric films by plasma oxidation
US7045406B2 (en) * 2002-12-03 2006-05-16 Asm International, N.V. Method of forming an electrode with adjusted work function
US6970053B2 (en) * 2003-05-22 2005-11-29 Micron Technology, Inc. Atomic layer deposition (ALD) high permeability layered magnetic films to reduce noise in high speed interconnection
US6967131B2 (en) * 2003-10-29 2005-11-22 International Business Machines Corp. Field effect transistor with electroplated metal gate
US7030001B2 (en) * 2004-04-19 2006-04-18 Freescale Semiconductor, Inc. Method for forming a gate electrode having a metal
US7189287B2 (en) * 2004-06-29 2007-03-13 Micron Technology, Inc. Atomic layer deposition using electron bombardment
US7081421B2 (en) * 2004-08-26 2006-07-25 Micron Technology, Inc. Lanthanide oxide dielectric layer
US7588988B2 (en) 2004-08-31 2009-09-15 Micron Technology, Inc. Method of forming apparatus having oxide films formed using atomic layer deposition
US7494939B2 (en) * 2004-08-31 2009-02-24 Micron Technology, Inc. Methods for forming a lanthanum-metal oxide dielectric layer
US7561017B2 (en) 2004-09-13 2009-07-14 Cooper Technologies Company Fusible switching disconnect modules and devices
US7576630B2 (en) * 2004-09-13 2009-08-18 Cooper Technologies Company Fusible switching disconnect modules and devices
US7474194B2 (en) * 2004-09-13 2009-01-06 Cooper Technologies Company Fusible switching disconnect modules and devices
WO2006031696A1 (en) * 2004-09-13 2006-03-23 Cooper Technologies Company Fusible switching disconnect modules and devices
KR100552820B1 (en) * 2004-09-17 2006-02-09 동부아남반도체 주식회사 Manufacturing method of semiconductor device
US7877112B2 (en) * 2004-11-19 2011-01-25 Nextel Communications Inc. SIM card data transfer system and methods
US7235501B2 (en) * 2004-12-13 2007-06-26 Micron Technology, Inc. Lanthanum hafnium oxide dielectrics
US20060125030A1 (en) * 2004-12-13 2006-06-15 Micron Technology, Inc. Hybrid ALD-CVD of PrxOy/ZrO2 films as gate dielectrics
KR100604923B1 (en) 2005-01-04 2006-07-28 삼성전자주식회사 Method of forming titanium aluminum nitride layerTiAlN by atomic layer deposition and phase change memory device having heating electrode fabricated by using the same
US7560395B2 (en) * 2005-01-05 2009-07-14 Micron Technology, Inc. Atomic layer deposited hafnium tantalum oxide dielectrics
US7374964B2 (en) * 2005-02-10 2008-05-20 Micron Technology, Inc. Atomic layer deposition of CeO2/Al2O3 films as gate dielectrics
JP2006278376A (en) * 2005-03-28 2006-10-12 Renesas Technology Corp Semiconductor device and manufacturing method thereof
US7687409B2 (en) 2005-03-29 2010-03-30 Micron Technology, Inc. Atomic layer deposited titanium silicon oxide films
US7390756B2 (en) * 2005-04-28 2008-06-24 Micron Technology, Inc. Atomic layer deposited zirconium silicon oxide films
US7662729B2 (en) 2005-04-28 2010-02-16 Micron Technology, Inc. Atomic layer deposition of a ruthenium layer to a lanthanide oxide dielectric layer
US7927948B2 (en) 2005-07-20 2011-04-19 Micron Technology, Inc. Devices with nanocrystals and methods of formation
US7317229B2 (en) * 2005-07-20 2008-01-08 Applied Materials, Inc. Gate electrode structures and methods of manufacture
US8071476B2 (en) 2005-08-31 2011-12-06 Micron Technology, Inc. Cobalt titanium oxide dielectric films
US7410910B2 (en) * 2005-08-31 2008-08-12 Micron Technology, Inc. Lanthanum aluminum oxynitride dielectric films
US7332433B2 (en) * 2005-09-22 2008-02-19 Sematech Inc. Methods of modulating the work functions of film layers
KR100756035B1 (en) * 2006-01-03 2007-09-07 삼성전자주식회사 Semiconductor device and method of manufacturing the same
US7605030B2 (en) 2006-08-31 2009-10-20 Micron Technology, Inc. Hafnium tantalum oxynitride high-k dielectric and metal gates
KR101427142B1 (en) * 2006-10-05 2014-08-07 에이에스엠 아메리카, 인코포레이티드 ALD of metal silicate films
US9087877B2 (en) * 2006-10-24 2015-07-21 Taiwan Semiconductor Manufacturing Company, Ltd. Low-k interconnect structures with reduced RC delay
WO2008072573A1 (en) * 2006-12-11 2008-06-19 Sony Corporation Semiconductor device manufacturing method and semiconductor device
JP5380827B2 (en) 2006-12-11 2014-01-08 ソニー株式会社 A method of manufacturing a semiconductor device
US20080241387A1 (en) * 2007-03-29 2008-10-02 Asm International N.V. Atomic layer deposition reactor
US7759237B2 (en) * 2007-06-28 2010-07-20 Micron Technology, Inc. Method of forming lutetium and lanthanum dielectric structures
US8945675B2 (en) 2008-05-29 2015-02-03 Asm International N.V. Methods for forming conductive titanium oxide thin films
US8557702B2 (en) * 2009-02-02 2013-10-15 Asm America, Inc. Plasma-enhanced atomic layers deposition of conductive material over dielectric layers
US9394608B2 (en) 2009-04-06 2016-07-19 Asm America, Inc. Semiconductor processing reactor and components thereof
US8716862B2 (en) 2009-05-06 2014-05-06 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit including a gate and a metallic connecting line
US8436473B2 (en) 2009-05-06 2013-05-07 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuits including air gaps around interconnect structures, and fabrication methods thereof
US20110095379A1 (en) * 2009-10-28 2011-04-28 International Business Machines Corporation Scaling of metal gate with aluminum containing metal layer for threshold voltage shift
US8134828B2 (en) * 2010-01-21 2012-03-13 Cooper Technologies Company Configurable deadfront fusible panelboard
US8232607B2 (en) 2010-11-23 2012-07-31 International Business Machines Corporation Borderless contact for replacement gate employing selective deposition
JP5702584B2 (en) * 2010-11-30 2015-04-15 株式会社日立国際電気 Semiconductor devices manufacturing method and a substrate processing apparatus
US9793148B2 (en) 2011-06-22 2017-10-17 Asm Japan K.K. Method for positioning wafers in multiple wafer transport
US9341296B2 (en) 2011-10-27 2016-05-17 Asm America, Inc. Heater jacket for a fluid line
US9096931B2 (en) 2011-10-27 2015-08-04 Asm America, Inc Deposition valve assembly and method of heating the same
US9017481B1 (en) 2011-10-28 2015-04-28 Asm America, Inc. Process feed management for semiconductor substrate processing
US9005539B2 (en) 2011-11-23 2015-04-14 Asm Ip Holding B.V. Chamber sealing member
US9167625B2 (en) 2011-11-23 2015-10-20 Asm Ip Holding B.V. Radiation shielding for a substrate holder
US9202727B2 (en) 2012-03-02 2015-12-01 ASM IP Holding Susceptor heater shim
US8946830B2 (en) 2012-04-04 2015-02-03 Asm Ip Holdings B.V. Metal oxide protective layer for a semiconductor device
US9029253B2 (en) * 2012-05-02 2015-05-12 Asm Ip Holding B.V. Phase-stabilized thin films, structures and devices including the thin films, and methods of forming same
US8728832B2 (en) 2012-05-07 2014-05-20 Asm Ip Holdings B.V. Semiconductor device dielectric interface layer
US8933375B2 (en) 2012-06-27 2015-01-13 Asm Ip Holding B.V. Susceptor heater and method of heating a substrate
US9558931B2 (en) 2012-07-27 2017-01-31 Asm Ip Holding B.V. System and method for gas-phase sulfur passivation of a semiconductor surface
US9117866B2 (en) 2012-07-31 2015-08-25 Asm Ip Holding B.V. Apparatus and method for calculating a wafer position in a processing chamber under process conditions
US9169975B2 (en) 2012-08-28 2015-10-27 Asm Ip Holding B.V. Systems and methods for mass flow controller verification
US9659799B2 (en) 2012-08-28 2017-05-23 Asm Ip Holding B.V. Systems and methods for dynamic semiconductor process scheduling
US9021985B2 (en) 2012-09-12 2015-05-05 Asm Ip Holdings B.V. Process gas management for an inductively-coupled plasma deposition reactor
US9324811B2 (en) 2012-09-26 2016-04-26 Asm Ip Holding B.V. Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming same
US9640416B2 (en) 2012-12-26 2017-05-02 Asm Ip Holding B.V. Single-and dual-chamber module-attachable wafer-handling chamber
US8894870B2 (en) 2013-02-01 2014-11-25 Asm Ip Holding B.V. Multi-step method and apparatus for etching compounds containing a metal
US9589770B2 (en) 2013-03-08 2017-03-07 Asm Ip Holding B.V. Method and systems for in-situ formation of intermediate reactive species
US9484191B2 (en) 2013-03-08 2016-11-01 Asm Ip Holding B.V. Pulsed remote plasma method and system
US8993054B2 (en) 2013-07-12 2015-03-31 Asm Ip Holding B.V. Method and system to reduce outgassing in a reaction chamber
US9018111B2 (en) 2013-07-22 2015-04-28 Asm Ip Holding B.V. Semiconductor reaction chamber with plasma capabilities
US9793115B2 (en) 2013-08-14 2017-10-17 Asm Ip Holding B.V. Structures and devices including germanium-tin films and methods of forming same
US9396934B2 (en) 2013-08-14 2016-07-19 Asm Ip Holding B.V. Methods of forming films including germanium tin and structures and devices including the films
US9240412B2 (en) 2013-09-27 2016-01-19 Asm Ip Holding B.V. Semiconductor structure and device and methods of forming same using selective epitaxial process
US9556516B2 (en) 2013-10-09 2017-01-31 ASM IP Holding B.V Method for forming Ti-containing film by PEALD using TDMAT or TDEAT
US9605343B2 (en) 2013-11-13 2017-03-28 Asm Ip Holding B.V. Method for forming conformal carbon films, structures conformal carbon film, and system of forming same
US9447498B2 (en) 2014-03-18 2016-09-20 Asm Ip Holding B.V. Method for performing uniform processing in gas system-sharing multiple reaction chambers
US9404587B2 (en) 2014-04-24 2016-08-02 ASM IP Holding B.V Lockout tagout for semiconductor vacuum valve
US9543180B2 (en) 2014-08-01 2017-01-10 Asm Ip Holding B.V. Apparatus and method for transporting wafers between wafer carrier and process tool under vacuum
US9890456B2 (en) 2014-08-21 2018-02-13 Asm Ip Holding B.V. Method and system for in situ formation of gas-phase compounds
US9657845B2 (en) 2014-10-07 2017-05-23 Asm Ip Holding B.V. Variable conductance gas distribution apparatus and method
KR20160059810A (en) 2014-11-19 2016-05-27 에이에스엠 아이피 홀딩 비.브이. Method of depositing thin film
KR20160076208A (en) 2014-12-22 2016-06-30 에이에스엠 아이피 홀딩 비.브이. Semiconductor device and manufacuring method thereof
US9478415B2 (en) 2015-02-13 2016-10-25 Asm Ip Holding B.V. Method for forming film having low resistance and shallow junction depth
US9646876B2 (en) 2015-02-27 2017-05-09 Applied Materials, Inc. Aluminum nitride barrier layer
US9899291B2 (en) 2015-07-13 2018-02-20 Asm Ip Holding B.V. Method for protecting layer by forming hydrocarbon-based extremely thin film
US9647114B2 (en) 2015-08-14 2017-05-09 Asm Ip Holding B.V. Methods of forming highly p-type doped germanium tin films and structures and devices including the films
US9523148B1 (en) 2015-08-25 2016-12-20 Asm Ip Holdings B.V. Process for deposition of titanium oxynitride for use in integrated circuit fabrication
US9711345B2 (en) 2015-08-25 2017-07-18 Asm Ip Holding B.V. Method for forming aluminum nitride-based film by PEALD
US9540729B1 (en) 2015-08-25 2017-01-10 Asm Ip Holding B.V. Deposition of titanium nanolaminates for use in integrated circuit fabrication
US9960072B2 (en) 2015-09-29 2018-05-01 Asm Ip Holding B.V. Variable adjustment for precise matching of multiple chamber cavity housings
US9909214B2 (en) 2015-10-15 2018-03-06 Asm Ip Holding B.V. Method for depositing dielectric film in trenches by PEALD
US9455138B1 (en) 2015-11-10 2016-09-27 Asm Ip Holding B.V. Method for forming dielectric film in trenches by PEALD using H-containing gas
US9905420B2 (en) 2015-12-01 2018-02-27 Asm Ip Holding B.V. Methods of forming silicon germanium tin films and structures and devices including the films
US9607837B1 (en) 2015-12-21 2017-03-28 Asm Ip Holding B.V. Method for forming silicon oxide cap layer for solid state diffusion process
US9735024B2 (en) 2015-12-28 2017-08-15 Asm Ip Holding B.V. Method of atomic layer etching using functional group-containing fluorocarbon
US9627221B1 (en) 2015-12-28 2017-04-18 Asm Ip Holding B.V. Continuous process incorporating atomic layer etching
US9754779B1 (en) 2016-02-19 2017-09-05 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US9859151B1 (en) 2016-07-08 2018-01-02 Asm Ip Holding B.V. Selective film deposition method to form air gaps
US9793135B1 (en) 2016-07-14 2017-10-17 ASM IP Holding B.V Method of cyclic dry etching using etchant film
US9812320B1 (en) 2016-07-28 2017-11-07 Asm Ip Holding B.V. Method and apparatus for filling a gap
US9887082B1 (en) 2016-07-28 2018-02-06 Asm Ip Holding B.V. Method and apparatus for filling a gap
US9916980B1 (en) 2016-12-15 2018-03-13 Asm Ip Holding B.V. Method of forming a structure on a substrate

Citations (90)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3171900A (en) * 1960-07-26 1965-03-02 Gen Dynamics Corp Automatic communication system
US3381114A (en) * 1963-12-28 1968-04-30 Nippon Electric Co Device for manufacturing epitaxial crystals
US3865654A (en) * 1972-11-01 1975-02-11 Ibm Complementary field effect transistor having p doped silicon gates and process for making the same
US4215156A (en) * 1977-08-26 1980-07-29 International Business Machines Corporation Method for fabricating tantalum semiconductor contacts
US4333808A (en) * 1979-10-30 1982-06-08 International Business Machines Corporation Method for manufacture of ultra-thin film capacitor
US4435896A (en) * 1981-12-07 1984-03-13 Bell Telephone Laboratories, Incorporated Method for fabricating complementary field effect transistor devices
US4590042A (en) * 1984-12-24 1986-05-20 Tegal Corporation Plasma reactor having slotted manifold
US4647947A (en) * 1982-03-15 1987-03-03 Tokyo Shibaura Denki Kabushiki Kaisha Optical protuberant bubble recording medium
US4757360A (en) * 1983-07-06 1988-07-12 Rca Corporation Floating gate memory device with facing asperities on floating and control gates
US4767641A (en) * 1986-03-04 1988-08-30 Leybold-Heraeus Gmbh Plasma treatment apparatus
US4811078A (en) * 1985-05-01 1989-03-07 Texas Instruments Incorporated Integrated circuit device and process with tin capacitors
US4814854A (en) * 1985-05-01 1989-03-21 Texas Instruments Incorporated Integrated circuit device and process with tin-gate transistor
US4897709A (en) * 1988-04-15 1990-01-30 Hitachi, Ltd. Titanium nitride film in contact hole with large aspect ratio
US4920071A (en) * 1985-03-15 1990-04-24 Fairchild Camera And Instrument Corporation High temperature interconnect system for an integrated circuit
US4931411A (en) * 1985-05-01 1990-06-05 Texas Instruments Incorporated Integrated circuit process with TiN-gate transistor
US4947221A (en) * 1985-11-29 1990-08-07 General Electric Company Memory cell for a dense EPROM
US4993358A (en) * 1989-07-28 1991-02-19 Watkins-Johnson Company Chemical vapor deposition reactor and method of operation
US5006192A (en) * 1988-06-28 1991-04-09 Mitsubishi Denki Kabushiki Kaisha Apparatus for producing semiconductor devices
US5080928A (en) * 1990-10-05 1992-01-14 Gte Laboratories Incorporated Method for making moisture insensitive zinc sulfide based luminescent materials
US5192589A (en) * 1991-09-05 1993-03-09 Micron Technology, Inc. Low-pressure chemical vapor deposition process for depositing thin titanium nitride films having low and stable resistivity
US5198029A (en) * 1989-08-01 1993-03-30 Gte Products Corporation Apparatus for coating small solids
US5280205A (en) * 1992-04-16 1994-01-18 Micron Technology, Inc. Fast sense amplifier
US5399379A (en) * 1993-04-14 1995-03-21 Micron Semiconductor, Inc. Low-pressure chemical vapor deposition process for depositing high-density, highly-conformal titanium nitride films of low bulk resistivity
US5429966A (en) * 1993-07-22 1995-07-04 National Science Council Method of fabricating a textured tunnel oxide for EEPROM applications
US5595606A (en) * 1995-04-20 1997-01-21 Tokyo Electron Limited Shower head and film forming apparatus using the same
US5610099A (en) * 1994-06-28 1997-03-11 Ramtron International Corporation Process for fabricating transistors using composite nitride structure
US5627785A (en) * 1996-03-15 1997-05-06 Micron Technology, Inc. Memory device with a sense amplifier
US5735960A (en) * 1996-04-02 1998-04-07 Micron Technology, Inc. Apparatus and method to increase gas residence time in a reactor
US5747116A (en) * 1994-11-08 1998-05-05 Micron Technology, Inc. Method of forming an electrical contact to a silicon substrate
US5855675A (en) * 1997-03-03 1999-01-05 Genus, Inc. Multipurpose processing chamber for chemical vapor deposition processes
US5866205A (en) * 1996-02-09 1999-02-02 Micron Technology, Inc. Process for titanium nitride deposition using five- and six-coordinate titanium complexes
US5901271A (en) * 1995-04-03 1999-05-04 Novellus Systems, Inc. Process of evaporating a liquid in a cyclone evaporator
US5916365A (en) * 1996-08-16 1999-06-29 Sherman; Arthur Sequential chemical vapor deposition
US6020024A (en) * 1997-08-04 2000-02-01 Motorola, Inc. Method for forming high dielectric constant metal oxides
US6027961A (en) * 1998-06-30 2000-02-22 Motorola, Inc. CMOS semiconductor devices and method of formation
US6057271A (en) * 1989-12-22 2000-05-02 Sumitomo Electric Industries, Ltd. Method of making a superconducting microwave component by off-axis sputtering
US6059885A (en) * 1996-12-19 2000-05-09 Toshiba Ceramics Co., Ltd. Vapor deposition apparatus and method for forming thin film
US6081034A (en) * 1992-06-12 2000-06-27 Micron Technology, Inc. Low-resistance contact to silicon having a titanium silicide interface and an amorphous titanium carbonitride barrier layer
US6175129B1 (en) * 1997-02-11 2001-01-16 Micron Technology, Inc. Capacitor structures, DRAM cell structures, methods of forming capacitors, methods of forming DRAM cells, and integrated circuits incorporating capacitor structures and DRAM cell structures
US6197628B1 (en) * 1998-08-27 2001-03-06 Micron Technology, Inc. Ruthenium silicide diffusion barrier layers and methods of forming same
US6204172B1 (en) * 1998-09-03 2001-03-20 Micron Technology, Inc. Low temperature deposition of barrier layers
US6203613B1 (en) * 1999-10-19 2001-03-20 International Business Machines Corporation Atomic layer deposition with nitrate containing precursors
US6206972B1 (en) * 1999-07-08 2001-03-27 Genus, Inc. Method and apparatus for providing uniform gas delivery to substrates in CVD and PECVD processes
US6211035B1 (en) * 1998-09-09 2001-04-03 Texas Instruments Incorporated Integrated circuit and method
US6214662B1 (en) * 2000-07-03 2001-04-10 Taiwan Semiconductor Manufacturing Company Forming self-align source line for memory array
US6218293B1 (en) * 1998-11-13 2001-04-17 Micron Technology, Inc. Batch processing for semiconductor wafers to form aluminum nitride and titanium aluminum nitride
US6225168B1 (en) * 1998-06-04 2001-05-01 Advanced Micro Devices, Inc. Semiconductor device having metal gate electrode and titanium or tantalum nitride gate dielectric barrier layer and process of fabrication thereof
US20010009695A1 (en) * 2000-01-18 2001-07-26 Saanila Ville Antero Process for growing metalloid thin films
US20020001906A1 (en) * 2000-06-27 2002-01-03 Park Dae Gyu Method of manufacturing a gate in a semiconductor device
US20020004299A1 (en) * 1994-08-15 2002-01-10 Schuele Paul J. Method of fabricating a contract structure having a composite barrier layer between a platinium layer and a polysilicon plug
US6338880B1 (en) * 1998-09-04 2002-01-15 Micron Technology, Inc. Chemical vapor deposition process for depositing titanium nitride films from an organometallic compound
US6342277B1 (en) * 1996-08-16 2002-01-29 Licensee For Microelectronics: Asm America, Inc. Sequential chemical vapor deposition
US6348386B1 (en) * 2001-04-16 2002-02-19 Motorola, Inc. Method for making a hafnium-based insulating film
US6380579B1 (en) * 1999-04-12 2002-04-30 Samsung Electronics Co., Ltd. Capacitor of semiconductor device
US6387712B1 (en) * 1996-06-26 2002-05-14 Tdk Corporation Process for preparing ferroelectric thin films
US6391769B1 (en) * 1998-08-19 2002-05-21 Samsung Electronics Co., Ltd. Method for forming metal interconnection in semiconductor device and interconnection structure fabricated thereby
US6399491B2 (en) * 2000-04-20 2002-06-04 Samsung Electronics Co., Ltd. Method of manufacturing a barrier metal layer using atomic layer deposition
US20020089023A1 (en) * 2001-01-05 2002-07-11 Motorola, Inc. Low leakage current metal oxide-nitrides and method of fabricating same
US6420279B1 (en) * 2001-06-28 2002-07-16 Sharp Laboratories Of America, Inc. Methods of using atomic layer deposition to deposit a high dielectric constant material on a substrate
US6423619B1 (en) * 2001-11-30 2002-07-23 Motorola, Inc. Transistor metal gate structure that minimizes non-planarity effects and method of formation
US20030017717A1 (en) * 2001-07-18 2003-01-23 Ahn Kie Y. Methods for forming dielectric materials and methods for forming semiconductor devices
US6514828B2 (en) * 2001-04-20 2003-02-04 Micron Technology, Inc. Method of fabricating a highly reliable gate oxide
US6521911B2 (en) * 2000-07-20 2003-02-18 North Carolina State University High dielectric constant metal silicates formed by controlled metal-surface reactions
US6537901B2 (en) * 2000-12-29 2003-03-25 Hynix Semiconductor Inc. Method of manufacturing a transistor in a semiconductor device
US6599781B1 (en) * 2000-09-27 2003-07-29 Chou H. Li Solid state device
US6674109B1 (en) * 1999-09-30 2004-01-06 Rohm Co., Ltd. Nonvolatile memory
US20040023810A1 (en) * 2002-07-26 2004-02-05 Alex Ignatiev Superconductor material on a tape substrate
US20040036129A1 (en) * 2002-08-22 2004-02-26 Micron Technology, Inc. Atomic layer deposition of CMOS gates with variable work functions
US6727169B1 (en) * 1999-10-15 2004-04-27 Asm International, N.V. Method of making conformal lining layers for damascene metallization
US6849298B2 (en) * 2001-06-12 2005-02-01 Hynix Semiconductor Inc. Method for forming diffusion barrier film of semiconductor device
US20050042373A1 (en) * 2003-08-18 2005-02-24 Kraus Brenda D. Atomic layer deposition methods of forming conductive metal nitride comprising layers
US20050064636A1 (en) * 2003-09-24 2005-03-24 Cyril Cabral Method and apparatus for fabricating CMOS field effect transistors
US6873020B2 (en) * 2002-02-22 2005-03-29 North Carolina State University High/low work function metal alloys for integrated circuit electrodes
US20050127461A1 (en) * 2003-11-25 2005-06-16 Dey Sandwip K. Molecular modifications of metal/dielectric interfaces
US6908849B2 (en) * 2001-08-30 2005-06-21 Micron Technology, Inc. High aspect ratio contact structure with reduced silicon consumption
US6911381B2 (en) * 1999-08-24 2005-06-28 Micron Technology Inc. Boron incorporated diffusion barrier material
US6919273B1 (en) * 1999-12-09 2005-07-19 Tokyo Electron Limited Method for forming TiSiN film, diffusion preventive film comprising TiSiN film, semiconductor device and its production method, and apparatus for forming TiSiN film
US6921702B2 (en) * 2002-07-30 2005-07-26 Micron Technology Inc. Atomic layer deposited nanolaminates of HfO2/ZrO2 films as gate dielectrics
US7018933B2 (en) * 2000-06-07 2006-03-28 Samsung Electronics, Co., Ltd. Method of forming a metal-insulator-metal capacitor
US20060113605A1 (en) * 2004-12-01 2006-06-01 Amberwave Systems Corporation Hybrid fin field-effect transistor structures and related methods
US20060113603A1 (en) * 2004-12-01 2006-06-01 Amberwave Systems Corporation Hybrid semiconductor-on-insulator structures and related methods
US20060134870A1 (en) * 2004-12-20 2006-06-22 Hongfa Luan Transistor device and method of manufacture thereof
US20070004186A1 (en) * 2004-03-03 2007-01-04 Tokyo Electron Limited Film forming method
US20070020923A1 (en) * 2005-07-20 2007-01-25 Micron Technology, Inc. ALD formed titanium nitride films
US20070065594A1 (en) * 2000-12-06 2007-03-22 Chiang Tony P System for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)
US7208779B2 (en) * 2004-04-16 2007-04-24 Kabushiki Kaisha Toshiba Semiconductor device
US20070116887A1 (en) * 2005-11-18 2007-05-24 Tokyo Electron Limited Method and system for performing plasma enhanced atomic layer deposition
US20070141797A1 (en) * 2005-12-16 2007-06-21 Hong-Jyh Li Semiconductor devices and methods of manufacture thereof
US20070164367A1 (en) * 2006-01-18 2007-07-19 Micron Technology, Inc. CMOS gates with solid-solution alloy tunable work functions
US20070164323A1 (en) * 2006-01-18 2007-07-19 Micron Technology, Inc. CMOS gates with intermetallic compound tunable work functions

Family Cites Families (82)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6482262B1 (en) * 1959-10-10 2002-11-19 Asm Microchemistry Oy Deposition of transition metal carbides
FI52359C (en) * 1974-11-29 1977-08-10 Instrumentarium Oy A method and apparatus for increasing compound thin films.
FI57975C (en) * 1979-02-28 1980-11-10 Lohja Ab Oy Foerfarande at uppbyggande and the arrangement of the thin foereningshinnor
US4389973A (en) * 1980-03-18 1983-06-28 Oy Lohja Ab Apparatus for performing growth of compound thin films
US5153144A (en) * 1988-05-10 1992-10-06 Hitachi, Ltd. Method of making tunnel EEPROM
US5042011A (en) * 1989-05-22 1991-08-20 Micron Technology, Inc. Sense amplifier pulldown device with tailored edge input
US6110529A (en) * 1990-07-06 2000-08-29 Advanced Tech Materials Method of forming metal films on a substrate by chemical vapor deposition
US5262199A (en) * 1992-04-17 1993-11-16 Center For Innovative Technology Coating porous materials with metal oxides and other ceramics by MOCVD
US5246881A (en) * 1993-04-14 1993-09-21 Micron Semiconductor, Inc. Low-pressure chemical vapor deposition process for depositing high-density, highly-conformal, titanium nitride films of low bulk resistivity
US5576579A (en) * 1995-01-12 1996-11-19 International Business Machines Corporation Tasin oxygen diffusion barrier in multilayer structures
US5589413A (en) * 1995-11-27 1996-12-31 Taiwan Semiconductor Manufacturing Company Method of manufacturing self-aligned bit-line during EPROM fabrication
US5659057A (en) * 1996-02-09 1997-08-19 Micron Technology, Inc. Five- and six-coordinate precursors for titanium nitride deposition
JPH1079481A (en) * 1996-09-05 1998-03-24 Mitsubishi Electric Corp Conductive layer connecting structure and its manufacture
US6461982B2 (en) * 1997-02-27 2002-10-08 Micron Technology, Inc. Methods for forming a dielectric film
US6174377B1 (en) * 1997-03-03 2001-01-16 Genus, Inc. Processing chamber for atomic layer deposition processes
US5828113A (en) * 1997-03-28 1998-10-27 Macronix International Co., Ltd. Double density MROM array structure
JPH10341002A (en) * 1997-06-06 1998-12-22 Oki Electric Ind Co Ltd Ferroelectric transistor, semiconductor storage, and handling method and manufacture of ferroelectric transistor
KR100261017B1 (en) * 1997-08-19 2000-08-01 윤종용 Method for forming metal wiring of semiconductor device
US6161500A (en) 1997-09-30 2000-12-19 Tokyo Electron Limited Apparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactions
US6054768A (en) * 1997-10-02 2000-04-25 Micron Technology, Inc. Metal fill by treatment of mobility layers
US5972430A (en) * 1997-11-26 1999-10-26 Advanced Technology Materials, Inc. Digital chemical vapor deposition (CVD) method for forming a multi-component oxide layer
US6383955B1 (en) * 1998-02-05 2002-05-07 Asm Japan K.K. Silicone polymer insulation film on semiconductor substrate and method for forming the film
US6492694B2 (en) 1998-02-27 2002-12-10 Micron Technology, Inc. Highly conductive composite polysilicon gate for CMOS integrated circuits
US6360685B1 (en) * 1998-05-05 2002-03-26 Applied Materials, Inc. Sub-atmospheric chemical vapor deposition system with dopant bypass
US6302964B1 (en) * 1998-06-16 2001-10-16 Applied Materials, Inc. One-piece dual gas faceplate for a showerhead in a semiconductor wafer processing system
US6271131B1 (en) * 1998-08-26 2001-08-07 Micron Technology, Inc. Methods for forming rhodium-containing layers such as platinum-rhodium barrier layers
US6583022B1 (en) * 1998-08-27 2003-06-24 Micron Technology, Inc. Methods of forming roughened layers of platinum and methods of forming capacitors
US6323081B1 (en) * 1998-09-03 2001-11-27 Micron Technology, Inc. Diffusion barrier layers and methods of forming same
DE69940335D1 (en) * 1998-09-28 2009-03-12 Nec Electronics Corp Apparatus and method for non-destructive testing of a semiconductor device
US6576053B1 (en) * 1999-10-06 2003-06-10 Samsung Electronics Co., Ltd. Method of forming thin film using atomic layer deposition method
US6200893B1 (en) * 1999-03-11 2001-03-13 Genus, Inc Radical-assisted sequential CVD
US6445023B1 (en) * 1999-03-16 2002-09-03 Micron Technology, Inc. Mixed metal nitride and boride barrier layers
US6171900B1 (en) * 1999-04-15 2001-01-09 Taiwan Semiconductor Manufacturing Company CVD Ta2O5/oxynitride stacked gate insulator with TiN gate electrode for sub-quarter micron MOSFET
US6410432B1 (en) * 1999-04-27 2002-06-25 Tokyo Electron Limited CVD of integrated Ta and TaNx films from tantalum halide precursors
US6524952B1 (en) * 1999-06-25 2003-02-25 Applied Materials, Inc. Method of forming a titanium silicide layer on a substrate
US6297539B1 (en) * 1999-07-19 2001-10-02 Sharp Laboratories Of America, Inc. Doped zirconia, or zirconia-like, dielectric film transistor structure and deposition method for same
US6630718B1 (en) * 1999-07-26 2003-10-07 Micron Technology, Inc. Transistor gate and local interconnect
KR20010017820A (en) * 1999-08-14 2001-03-05 윤종용 Semiconductor device and manufacturing method thereof
KR100304714B1 (en) * 1999-10-20 2001-11-02 윤종용 Method for fabricating metal layer of semiconductor device using metal-halide gas
KR100385946B1 (en) * 1999-12-08 2003-06-02 삼성전자주식회사 Method for forming a metal layer by an atomic layer deposition and a semiconductor device with the metal layer as a barrier metal layer, an upper electrode, or a lower electrode of capacitor
US6277693B1 (en) * 1999-12-16 2001-08-21 Taiwan Semiconductor Manufacturing Co., Ltd. Self-aligned process for forming source line of ETOX flash memory
US6485988B2 (en) * 1999-12-22 2002-11-26 Texas Instruments Incorporated Hydrogen-free contact etch for ferroelectric capacitor formation
KR100313091B1 (en) * 1999-12-29 2001-11-07 박종섭 Method of forming gate dielectric layer with TaON
US6551399B1 (en) * 2000-01-10 2003-04-22 Genus Inc. Fully integrated process for MIM capacitors using atomic layer deposition
US6444039B1 (en) * 2000-03-07 2002-09-03 Simplus Systems Corporation Three-dimensional showerhead apparatus
WO2001066832A3 (en) * 2000-03-07 2002-02-14 Asm Inc Graded thin films
KR100640067B1 (en) * 2000-05-02 2006-10-31 한라공조주식회사 Device for cooling switching circuit of control box
US6482733B2 (en) * 2000-05-15 2002-11-19 Asm Microchemistry Oy Protective layers prior to alternating layer deposition
US6482740B2 (en) * 2000-05-15 2002-11-19 Asm Microchemistry Oy Method of growing electrical conductors by reducing metal oxide film with organic compound containing -OH, -CHO, or -COOH
US6432779B1 (en) * 2000-05-18 2002-08-13 Motorola, Inc. Selective removal of a metal oxide dielectric
KR100647442B1 (en) * 2000-06-07 2006-11-17 주성엔지니어링(주) Method of forming a thin film using atomic layer deposition
KR100569587B1 (en) * 2000-06-30 2006-04-10 주식회사 하이닉스반도체 Method of manufacturing a high dielectric capacitor
US6461909B1 (en) * 2000-08-30 2002-10-08 Micron Technology, Inc. Process for fabricating RuSixOy-containing adhesion layers
US7118942B1 (en) * 2000-09-27 2006-10-10 Li Chou H Method of making atomic integrated circuit device
US6784515B1 (en) * 2000-09-27 2004-08-31 Chou H Li Semiconductor integrated circuit device
US6465334B1 (en) * 2000-10-05 2002-10-15 Advanced Micro Devices, Inc. Enhanced electroless deposition of dielectric precursor materials for use in in-laid gate MOS transistors
JP2002116237A (en) * 2000-10-10 2002-04-19 Texas Instr Japan Ltd Semiconductor integrated circuit
US6368941B1 (en) * 2000-11-08 2002-04-09 United Microelectronics Corp. Fabrication of a shallow trench isolation by plasma oxidation
KR100382149B1 (en) * 2000-11-30 2003-05-09 한국전자통신연구원 Formation method for Sr-Ta-O thin films
KR100385947B1 (en) * 2000-12-06 2003-06-02 삼성전자주식회사 Method of forming thin film by atomic layer deposition
US6800173B2 (en) * 2000-12-15 2004-10-05 Novellus Systems, Inc. Variable gas conductance control for a process chamber
US6630201B2 (en) * 2001-04-05 2003-10-07 Angstron Systems, Inc. Adsorption process for atomic layer deposition
US6495436B2 (en) * 2001-02-09 2002-12-17 Micron Technology, Inc. Formation of metal oxide gate dielectric
US6448192B1 (en) * 2001-04-16 2002-09-10 Motorola, Inc. Method for forming a high dielectric constant material
US7037862B2 (en) * 2001-06-13 2006-05-02 Micron Technology, Inc. Dielectric layer forming method and devices formed therewith
US6614079B2 (en) * 2001-07-19 2003-09-02 International Business Machines Corporation All-in-one disposable/permanent spacer elevated source/drain, self-aligned silicide CMOS
US6605549B2 (en) * 2001-09-29 2003-08-12 Intel Corporation Method for improving nucleation and adhesion of CVD and ALD films deposited onto low-dielectric-constant dielectrics
US6656282B2 (en) * 2001-10-11 2003-12-02 Moohan Co., Ltd. Atomic layer deposition apparatus and process using remote plasma
US6770521B2 (en) * 2001-11-30 2004-08-03 Texas Instruments Incorporated Method of making multiple work function gates by implanting metals with metallic alloying additives
US6953730B2 (en) * 2001-12-20 2005-10-11 Micron Technology, Inc. Low-temperature grown high quality ultra-thin CoTiO3 gate dielectrics
US6620670B2 (en) * 2002-01-18 2003-09-16 Applied Materials, Inc. Process conditions and precursors for atomic layer deposition (ALD) of AL2O3
US6794234B2 (en) * 2002-01-30 2004-09-21 The Regents Of The University Of California Dual work function CMOS gate technology based on metal interdiffusion
US6660577B2 (en) * 2002-02-23 2003-12-09 Taiwan Semiconductor Manufacturing Co. Ltd Method for fabricating metal gates in deep sub-micron devices
US6967154B2 (en) * 2002-08-26 2005-11-22 Micron Technology, Inc. Enhanced atomic layer deposition
US6830983B2 (en) 2002-08-29 2004-12-14 Micron Technology, Inc. Method of making an oxygen diffusion barrier for semiconductor devices using platinum, rhodium, or iridium stuffed with silicon oxide
KR100460841B1 (en) * 2002-10-22 2004-12-09 한국전자통신연구원 Method for forming nitrogen containing oxide thin film by plasma enhanced atomic layer deposition
US6958302B2 (en) * 2002-12-04 2005-10-25 Micron Technology, Inc. Atomic layer deposited Zr-Sn-Ti-O films using TiI4
US7473640B2 (en) * 2003-01-15 2009-01-06 Sharp Laboratories Of America, Inc. Reactive gate electrode conductive barrier
US7183186B2 (en) * 2003-04-22 2007-02-27 Micro Technology, Inc. Atomic layer deposited ZrTiO4 films
US20060011949A1 (en) * 2004-07-18 2006-01-19 Chih-Wei Yang Metal-gate cmos device and fabrication method of making same
US7598545B2 (en) * 2005-04-21 2009-10-06 International Business Machines Corporation Using metal/metal nitride bilayers as gate electrodes in self-aligned aggressively scaled CMOS devices
US7462538B2 (en) * 2005-11-15 2008-12-09 Infineon Technologies Ag Methods of manufacturing multiple gate CMOS transistors having different gate dielectric materials

Patent Citations (99)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3171900A (en) * 1960-07-26 1965-03-02 Gen Dynamics Corp Automatic communication system
US3381114A (en) * 1963-12-28 1968-04-30 Nippon Electric Co Device for manufacturing epitaxial crystals
US3865654A (en) * 1972-11-01 1975-02-11 Ibm Complementary field effect transistor having p doped silicon gates and process for making the same
US4215156A (en) * 1977-08-26 1980-07-29 International Business Machines Corporation Method for fabricating tantalum semiconductor contacts
US4333808A (en) * 1979-10-30 1982-06-08 International Business Machines Corporation Method for manufacture of ultra-thin film capacitor
US4435896A (en) * 1981-12-07 1984-03-13 Bell Telephone Laboratories, Incorporated Method for fabricating complementary field effect transistor devices
US4647947A (en) * 1982-03-15 1987-03-03 Tokyo Shibaura Denki Kabushiki Kaisha Optical protuberant bubble recording medium
US4757360A (en) * 1983-07-06 1988-07-12 Rca Corporation Floating gate memory device with facing asperities on floating and control gates
US4590042A (en) * 1984-12-24 1986-05-20 Tegal Corporation Plasma reactor having slotted manifold
US4920071A (en) * 1985-03-15 1990-04-24 Fairchild Camera And Instrument Corporation High temperature interconnect system for an integrated circuit
US4931411A (en) * 1985-05-01 1990-06-05 Texas Instruments Incorporated Integrated circuit process with TiN-gate transistor
US4814854A (en) * 1985-05-01 1989-03-21 Texas Instruments Incorporated Integrated circuit device and process with tin-gate transistor
US4811078A (en) * 1985-05-01 1989-03-07 Texas Instruments Incorporated Integrated circuit device and process with tin capacitors
US4947221A (en) * 1985-11-29 1990-08-07 General Electric Company Memory cell for a dense EPROM
US4767641A (en) * 1986-03-04 1988-08-30 Leybold-Heraeus Gmbh Plasma treatment apparatus
US4897709A (en) * 1988-04-15 1990-01-30 Hitachi, Ltd. Titanium nitride film in contact hole with large aspect ratio
US5006192A (en) * 1988-06-28 1991-04-09 Mitsubishi Denki Kabushiki Kaisha Apparatus for producing semiconductor devices
US4993358A (en) * 1989-07-28 1991-02-19 Watkins-Johnson Company Chemical vapor deposition reactor and method of operation
US5198029A (en) * 1989-08-01 1993-03-30 Gte Products Corporation Apparatus for coating small solids
US6057271A (en) * 1989-12-22 2000-05-02 Sumitomo Electric Industries, Ltd. Method of making a superconducting microwave component by off-axis sputtering
US5080928A (en) * 1990-10-05 1992-01-14 Gte Laboratories Incorporated Method for making moisture insensitive zinc sulfide based luminescent materials
US5192589A (en) * 1991-09-05 1993-03-09 Micron Technology, Inc. Low-pressure chemical vapor deposition process for depositing thin titanium nitride films having low and stable resistivity
US5280205A (en) * 1992-04-16 1994-01-18 Micron Technology, Inc. Fast sense amplifier
US6881667B2 (en) * 1992-06-12 2005-04-19 Micron Technology, Inc. Low-resistance contact to silicon having a titanium silicide interface and an amorphous titanium carbonitride barrier layer
US6081034A (en) * 1992-06-12 2000-06-27 Micron Technology, Inc. Low-resistance contact to silicon having a titanium silicide interface and an amorphous titanium carbonitride barrier layer
US5399379A (en) * 1993-04-14 1995-03-21 Micron Semiconductor, Inc. Low-pressure chemical vapor deposition process for depositing high-density, highly-conformal titanium nitride films of low bulk resistivity
US5429966A (en) * 1993-07-22 1995-07-04 National Science Council Method of fabricating a textured tunnel oxide for EEPROM applications
US5610099A (en) * 1994-06-28 1997-03-11 Ramtron International Corporation Process for fabricating transistors using composite nitride structure
US20020004299A1 (en) * 1994-08-15 2002-01-10 Schuele Paul J. Method of fabricating a contract structure having a composite barrier layer between a platinium layer and a polysilicon plug
US5747116A (en) * 1994-11-08 1998-05-05 Micron Technology, Inc. Method of forming an electrical contact to a silicon substrate
US5901271A (en) * 1995-04-03 1999-05-04 Novellus Systems, Inc. Process of evaporating a liquid in a cyclone evaporator
US5595606A (en) * 1995-04-20 1997-01-21 Tokyo Electron Limited Shower head and film forming apparatus using the same
US5866205A (en) * 1996-02-09 1999-02-02 Micron Technology, Inc. Process for titanium nitride deposition using five- and six-coordinate titanium complexes
US5627785A (en) * 1996-03-15 1997-05-06 Micron Technology, Inc. Memory device with a sense amplifier
US5735960A (en) * 1996-04-02 1998-04-07 Micron Technology, Inc. Apparatus and method to increase gas residence time in a reactor
US6387712B1 (en) * 1996-06-26 2002-05-14 Tdk Corporation Process for preparing ferroelectric thin films
US6342277B1 (en) * 1996-08-16 2002-01-29 Licensee For Microelectronics: Asm America, Inc. Sequential chemical vapor deposition
US5916365A (en) * 1996-08-16 1999-06-29 Sherman; Arthur Sequential chemical vapor deposition
US6059885A (en) * 1996-12-19 2000-05-09 Toshiba Ceramics Co., Ltd. Vapor deposition apparatus and method for forming thin film
US6175129B1 (en) * 1997-02-11 2001-01-16 Micron Technology, Inc. Capacitor structures, DRAM cell structures, methods of forming capacitors, methods of forming DRAM cells, and integrated circuits incorporating capacitor structures and DRAM cell structures
US5855675A (en) * 1997-03-03 1999-01-05 Genus, Inc. Multipurpose processing chamber for chemical vapor deposition processes
US6020024A (en) * 1997-08-04 2000-02-01 Motorola, Inc. Method for forming high dielectric constant metal oxides
US6225168B1 (en) * 1998-06-04 2001-05-01 Advanced Micro Devices, Inc. Semiconductor device having metal gate electrode and titanium or tantalum nitride gate dielectric barrier layer and process of fabrication thereof
US6027961A (en) * 1998-06-30 2000-02-22 Motorola, Inc. CMOS semiconductor devices and method of formation
US6391769B1 (en) * 1998-08-19 2002-05-21 Samsung Electronics Co., Ltd. Method for forming metal interconnection in semiconductor device and interconnection structure fabricated thereby
US6197628B1 (en) * 1998-08-27 2001-03-06 Micron Technology, Inc. Ruthenium silicide diffusion barrier layers and methods of forming same
US6204172B1 (en) * 1998-09-03 2001-03-20 Micron Technology, Inc. Low temperature deposition of barrier layers
US6338880B1 (en) * 1998-09-04 2002-01-15 Micron Technology, Inc. Chemical vapor deposition process for depositing titanium nitride films from an organometallic compound
US6531192B2 (en) * 1998-09-04 2003-03-11 Micron Technology, Inc. Chemical vapor deposition process for depositing titanium nitride films from an organo-metallic compound
US6211035B1 (en) * 1998-09-09 2001-04-03 Texas Instruments Incorporated Integrated circuit and method
US6218293B1 (en) * 1998-11-13 2001-04-17 Micron Technology, Inc. Batch processing for semiconductor wafers to form aluminum nitride and titanium aluminum nitride
US6548405B2 (en) * 1998-11-13 2003-04-15 Micron Technology, Inc. Batch processing for semiconductor wafers to form aluminum nitride and titanium aluminum nitride
US6365519B2 (en) * 1998-11-13 2002-04-02 Micron Technology, Inc. Batch processing for semiconductor wafers to form aluminum nitride and titanium aluminum nitride
US6380579B1 (en) * 1999-04-12 2002-04-30 Samsung Electronics Co., Ltd. Capacitor of semiconductor device
US6206972B1 (en) * 1999-07-08 2001-03-27 Genus, Inc. Method and apparatus for providing uniform gas delivery to substrates in CVD and PECVD processes
US6911381B2 (en) * 1999-08-24 2005-06-28 Micron Technology Inc. Boron incorporated diffusion barrier material
US6674109B1 (en) * 1999-09-30 2004-01-06 Rohm Co., Ltd. Nonvolatile memory
US6727169B1 (en) * 1999-10-15 2004-04-27 Asm International, N.V. Method of making conformal lining layers for damascene metallization
US6203613B1 (en) * 1999-10-19 2001-03-20 International Business Machines Corporation Atomic layer deposition with nitrate containing precursors
US6919273B1 (en) * 1999-12-09 2005-07-19 Tokyo Electron Limited Method for forming TiSiN film, diffusion preventive film comprising TiSiN film, semiconductor device and its production method, and apparatus for forming TiSiN film
US20010009695A1 (en) * 2000-01-18 2001-07-26 Saanila Ville Antero Process for growing metalloid thin films
US6399491B2 (en) * 2000-04-20 2002-06-04 Samsung Electronics Co., Ltd. Method of manufacturing a barrier metal layer using atomic layer deposition
US7018933B2 (en) * 2000-06-07 2006-03-28 Samsung Electronics, Co., Ltd. Method of forming a metal-insulator-metal capacitor
US20020001906A1 (en) * 2000-06-27 2002-01-03 Park Dae Gyu Method of manufacturing a gate in a semiconductor device
US6214662B1 (en) * 2000-07-03 2001-04-10 Taiwan Semiconductor Manufacturing Company Forming self-align source line for memory array
US6521911B2 (en) * 2000-07-20 2003-02-18 North Carolina State University High dielectric constant metal silicates formed by controlled metal-surface reactions
US6599781B1 (en) * 2000-09-27 2003-07-29 Chou H. Li Solid state device
US20070065594A1 (en) * 2000-12-06 2007-03-22 Chiang Tony P System for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)
US6537901B2 (en) * 2000-12-29 2003-03-25 Hynix Semiconductor Inc. Method of manufacturing a transistor in a semiconductor device
US20020089023A1 (en) * 2001-01-05 2002-07-11 Motorola, Inc. Low leakage current metal oxide-nitrides and method of fabricating same
US6348386B1 (en) * 2001-04-16 2002-02-19 Motorola, Inc. Method for making a hafnium-based insulating film
US6514828B2 (en) * 2001-04-20 2003-02-04 Micron Technology, Inc. Method of fabricating a highly reliable gate oxide
US6849298B2 (en) * 2001-06-12 2005-02-01 Hynix Semiconductor Inc. Method for forming diffusion barrier film of semiconductor device
US6420279B1 (en) * 2001-06-28 2002-07-16 Sharp Laboratories Of America, Inc. Methods of using atomic layer deposition to deposit a high dielectric constant material on a substrate
US20030017717A1 (en) * 2001-07-18 2003-01-23 Ahn Kie Y. Methods for forming dielectric materials and methods for forming semiconductor devices
US6534420B2 (en) * 2001-07-18 2003-03-18 Micron Technology, Inc. Methods for forming dielectric materials and methods for forming semiconductor devices
US6908849B2 (en) * 2001-08-30 2005-06-21 Micron Technology, Inc. High aspect ratio contact structure with reduced silicon consumption
US6423619B1 (en) * 2001-11-30 2002-07-23 Motorola, Inc. Transistor metal gate structure that minimizes non-planarity effects and method of formation
US6873020B2 (en) * 2002-02-22 2005-03-29 North Carolina State University High/low work function metal alloys for integrated circuit electrodes
US20040023810A1 (en) * 2002-07-26 2004-02-05 Alex Ignatiev Superconductor material on a tape substrate
US6921702B2 (en) * 2002-07-30 2005-07-26 Micron Technology Inc. Atomic layer deposited nanolaminates of HfO2/ZrO2 films as gate dielectrics
US7351628B2 (en) * 2002-08-22 2008-04-01 Micron Technology, Inc. Atomic layer deposition of CMOS gates with variable work functions
US20050032342A1 (en) * 2002-08-22 2005-02-10 Micron Technology, Inc. Atomic layer deposition of CMOS gates with variable work functions
US20040140513A1 (en) * 2002-08-22 2004-07-22 Micron Technology, Inc. Atomic layer deposition of CMOS gates with variable work functions
US20040036129A1 (en) * 2002-08-22 2004-02-26 Micron Technology, Inc. Atomic layer deposition of CMOS gates with variable work functions
US20050042373A1 (en) * 2003-08-18 2005-02-24 Kraus Brenda D. Atomic layer deposition methods of forming conductive metal nitride comprising layers
US20050064636A1 (en) * 2003-09-24 2005-03-24 Cyril Cabral Method and apparatus for fabricating CMOS field effect transistors
US20050127461A1 (en) * 2003-11-25 2005-06-16 Dey Sandwip K. Molecular modifications of metal/dielectric interfaces
US20070004186A1 (en) * 2004-03-03 2007-01-04 Tokyo Electron Limited Film forming method
US7208779B2 (en) * 2004-04-16 2007-04-24 Kabushiki Kaisha Toshiba Semiconductor device
US20060113603A1 (en) * 2004-12-01 2006-06-01 Amberwave Systems Corporation Hybrid semiconductor-on-insulator structures and related methods
US20060113605A1 (en) * 2004-12-01 2006-06-01 Amberwave Systems Corporation Hybrid fin field-effect transistor structures and related methods
US20060134870A1 (en) * 2004-12-20 2006-06-22 Hongfa Luan Transistor device and method of manufacture thereof
US7473637B2 (en) * 2005-07-20 2009-01-06 Micron Technology, Inc. ALD formed titanium nitride films
US20070020923A1 (en) * 2005-07-20 2007-01-25 Micron Technology, Inc. ALD formed titanium nitride films
US20070116887A1 (en) * 2005-11-18 2007-05-24 Tokyo Electron Limited Method and system for performing plasma enhanced atomic layer deposition
US20070141797A1 (en) * 2005-12-16 2007-06-21 Hong-Jyh Li Semiconductor devices and methods of manufacture thereof
US20070164367A1 (en) * 2006-01-18 2007-07-19 Micron Technology, Inc. CMOS gates with solid-solution alloy tunable work functions
US20070164323A1 (en) * 2006-01-18 2007-07-19 Micron Technology, Inc. CMOS gates with intermetallic compound tunable work functions

Cited By (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040036129A1 (en) * 2002-08-22 2004-02-26 Micron Technology, Inc. Atomic layer deposition of CMOS gates with variable work functions
US20050032342A1 (en) * 2002-08-22 2005-02-10 Micron Technology, Inc. Atomic layer deposition of CMOS gates with variable work functions
US7351628B2 (en) 2002-08-22 2008-04-01 Micron Technology, Inc. Atomic layer deposition of CMOS gates with variable work functions
US20040224484A1 (en) * 2003-05-07 2004-11-11 Ohalid Fareed Methods of growing nitride-based film using varying pulses
US8227322B2 (en) 2003-05-07 2012-07-24 Sensor Electronic Technology, Inc. Methods of growing nitride-based film using varying pulses
US20070141258A1 (en) * 2003-05-07 2007-06-21 Qhalid Fareed Methods of growing nitride-based film using varying pulses
US7192849B2 (en) * 2003-05-07 2007-03-20 Sensor Electronic Technology, Inc. Methods of growing nitride-based film using varying pulses
US20070034966A1 (en) * 2005-06-30 2007-02-15 Min-Joo Kim Dual gate CMOS semiconductor devices and methods of fabricating such devices
US8058729B2 (en) 2005-07-20 2011-11-15 Micron Technology, Inc. Titanium nitride films
US20070200243A1 (en) * 2005-07-20 2007-08-30 Micron Technology, Inc. Ald formed titanium nitride films
US8633110B2 (en) 2005-07-20 2014-01-21 Micron Technology, Inc. Titanium nitride films
US20070164323A1 (en) * 2006-01-18 2007-07-19 Micron Technology, Inc. CMOS gates with intermetallic compound tunable work functions
US7709402B2 (en) 2006-02-16 2010-05-04 Micron Technology, Inc. Conductive layers for hafnium silicon oxynitride films
US8785312B2 (en) 2006-02-16 2014-07-22 Micron Technology, Inc. Conductive layers for hafnium silicon oxynitride
WO2007146537A3 (en) * 2006-06-09 2008-10-09 Micron Technology Inc Method of forming a layer of material using an atomic layer deposition process
US20070287300A1 (en) * 2006-06-09 2007-12-13 Neal Rueger Method of forming a layer of material using an atomic layer deposition process
KR101199055B1 (en) * 2006-06-09 2012-11-07 마이크론 테크놀로지, 인크. Method of forming a layer of material using an atomic layer deposition process
CN101460660B (en) 2006-06-09 2012-08-08 美光科技公司 Method of forming a layer of material using an atomic layer deposition process
WO2007146537A2 (en) * 2006-06-09 2007-12-21 Micron Technology, Inc. Method of forming a layer of material using an atomic layer deposition process
US7557047B2 (en) * 2006-06-09 2009-07-07 Micron Technology, Inc. Method of forming a layer of material using an atomic layer deposition process
US20090239389A1 (en) * 2006-06-09 2009-09-24 Micron Technology, Inc. Method of Forming a Layer of Material Using an Atomic Layer Deposition Process
US8026168B2 (en) 2007-08-15 2011-09-27 Tokyo Electron Limited Semiconductor device containing an aluminum tantalum carbonitride barrier film and method of forming
US20090045514A1 (en) * 2007-08-15 2009-02-19 Tokyo Electron Limited Semiconductor device containing an aluminum tantalum carbonitride barrier film and method of forming
US20090246952A1 (en) * 2008-03-28 2009-10-01 Tokyo Electron Limited Method of forming a cobalt metal nitride barrier film
US7985680B2 (en) 2008-08-25 2011-07-26 Tokyo Electron Limited Method of forming aluminum-doped metal carbonitride gate electrodes
US20100048009A1 (en) * 2008-08-25 2010-02-25 Tokyo Electron Limited Method of forming aluminum-doped metal carbonitride gate electrodes
US8786031B2 (en) 2010-03-01 2014-07-22 Canon Anelva Corporation Metal nitride film, semiconductor device using the metal nitride film, and manufacturing method of semiconductor device
US20110210405A1 (en) * 2010-03-01 2011-09-01 Canon Anelva Corporation Metal nitride film, semiconductor device using the metal nitride film, and manufacturing method of semiconductor device

Also Published As

Publication number Publication date Type
KR20050038630A (en) 2005-04-27 application
US20040140513A1 (en) 2004-07-22 application
EP1532669A1 (en) 2005-05-25 application
KR100701542B1 (en) 2007-03-30 grant
JP2005536877A (en) 2005-12-02 application
WO2004019394A1 (en) 2004-03-04 application
CN1689143A (en) 2005-10-26 application
US7351628B2 (en) 2008-04-01 grant
US20050032342A1 (en) 2005-02-10 application
CN100359640C (en) 2008-01-02 grant
US20040036129A1 (en) 2004-02-26 application

Similar Documents

Publication Publication Date Title
US6596636B2 (en) ALD method to improve surface coverage
US6958302B2 (en) Atomic layer deposited Zr-Sn-Ti-O films using TiI4
US6720259B2 (en) Passivation method for improved uniformity and repeatability for atomic layer deposition and chemical vapor deposition
US7262125B2 (en) Method of forming low-resistivity tungsten interconnects
Min et al. Metal–organic atomic-layer deposition of titanium–silicon–nitride films
US7005372B2 (en) Deposition of tungsten nitride
US7955972B2 (en) Methods for growing low-resistivity tungsten for high aspect ratio and small features
US5733816A (en) Method for depositing a tungsten layer on silicon
US7727864B2 (en) Controlled composition using plasma-enhanced atomic layer deposition
US7220451B2 (en) Process for producing metal thin films by ALD
US20060258078A1 (en) Atomic layer deposition of high-k metal oxides
US7615438B2 (en) Lanthanide yttrium aluminum oxide dielectric films
US6930060B2 (en) Method for forming a uniform distribution of nitrogen in silicon oxynitride gate dielectric
US6537901B2 (en) Method of manufacturing a transistor in a semiconductor device
US8101521B1 (en) Methods for improving uniformity and resistivity of thin tungsten films
US20050227442A1 (en) Atomic layer deposited nanolaminates of HfO2/ZrO2 films as gate dielectrics
US7064050B2 (en) Metal carbide gate structure and method of fabrication
US20040110391A1 (en) Atomic layer deposited Zr-Sn-Ti-O films
US7563730B2 (en) Hafnium lanthanide oxynitride films
US7122464B2 (en) Systems and methods of forming refractory metal nitride layers using disilazanes
US8048805B2 (en) Methods for growing low-resistivity tungsten film
US20070049023A1 (en) Zirconium-doped gadolinium oxide films
US20020068466A1 (en) Methods of forming thin films by atomic layer deposition
US7160817B2 (en) Dielectric material forming methods
US7432548B2 (en) Silicon lanthanide oxynitride films