US20050130326A1 - Method for fabricating capacitor in semiconductor device - Google Patents

Method for fabricating capacitor in semiconductor device Download PDF

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US20050130326A1
US20050130326A1 US10/879,745 US87974504A US2005130326A1 US 20050130326 A1 US20050130326 A1 US 20050130326A1 US 87974504 A US87974504 A US 87974504A US 2005130326 A1 US2005130326 A1 US 2005130326A1
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gas
dielectric layer
forming
source gas
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US10/879,745
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Kee-jeung Lee
Jae-sung Roh
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SK Hynix Inc
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Hynix Semiconductor Inc
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Assigned to HYNIX SEMICONDUCTOR INC. reassignment HYNIX SEMICONDUCTOR INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: LEE, KEE-JEUNG, ROH, JAE-SUNG
Publication of US20050130326A1 publication Critical patent/US20050130326A1/en
Priority to US11/652,119 priority Critical patent/US7531422B2/en
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    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/405—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45531—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making ternary or higher compositions
    • C—CHEMISTRY; METALLURGY
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
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    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/3141—Deposition using atomic layer deposition techniques [ALD]
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31604—Deposition from a gas or vapour
    • H01L21/31645—Deposition of Hafnium oxides, e.g. HfO2
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    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H01L28/84—Electrodes with an enlarged surface, e.g. formed by texturisation being a rough surface, e.g. using hemispherical grains
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    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
    • H01L28/91—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions made by depositing layers, e.g. by depositing alternating conductive and insulating layers
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    • H10B—ELECTRONIC MEMORY DEVICES
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    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor

Definitions

  • the present invention relates to a method for fabricating a capacitor in a semiconductor device; and, more particularly, to a method for fabricating a capacitor in a semiconductor device with use of hafnium-terbium oxide.
  • a lower electrode is formed in three dimensions and in the form of hemisphere of which surface area is large; and a height of the capacitor is increased.
  • the increased height of the capacitor creates a height difference between the cell region and the peripheral region, and this height difference adversely results in a difficulty in securing a depth of focus during a subsequent photo-exposure process.
  • it is limited to have a capacitance of a capacitor required for the next generation DRAM device with a memory capacitance of over 256 megabytes.
  • the development of the capacitor has been currently focused to have an appropriate height along with a sufficient capacitance by using of a dielectric material having a high dielectric constant.
  • dielectric material examples include tantalum oxide (Ta 2 O 5 ) having a dielectric constant of 25, hafnium oxide (HfO 2 ) having a dielectric constant ranging from 20 to 30 and alumina (Al 2 O 3 ) having a dielectric constant of 9.
  • a Ta 2 O 5 dielectric layer is susceptible to leakage currents because the Ta 2 O 5 dielectric layer becomes deteriorated by a thermal process performed after the formation of the Ta 2 O 5 layer. Also, it is limited to form an Al 2 O 3 dielectric layer with a sufficient capacitance because of a relatively low dielectric constant of Al 2 O 3 compared with HfO 2 and Ta 2 O 5 . Further, an HfO 2 dielectric layer has a low intensity of breakdown voltage, thereby being susceptible to repeated electric stress. Thus, durability of a capacitor with the HfO 2 dielectric layer may become reduced.
  • an object of the present invention to provide a method for fabricating a capacitor in a semiconductor device capable of improving reliability of a dielectric layer and securing a required capacitance for an operation of a highly integrated device.
  • a method for fabricating a capacitor in a semiconductor device including the steps of: forming a lower electrode on a substrate; forming an amorphous hafnium-terbium oxide (Hf 1-x Tb x O) dielectric layer on the lower electrode; crystallizing the Hf 1-x Tb x O dielectric layer by performing a thermal process; and forming an upper electrode on the Hf 1-x Tb x O dielectric layer.
  • a method for fabricating a capacitor in a semiconductor device including the steps of: forming a lower electrode on a substrate; forming an amorphous hafnium-terbium oxide (Hf 1-x Tb x O) dielectric layer on the lower electrode; crystallizing the Hf 1-x Tb x O dielectric layer by performing a thermal process; and forming an upper electrode on the Hf 1-x Tb x O dielectric layer.
  • Hf 1-x Tb x O amorphous hafnium-terbium oxide
  • FIG. 2 is a diagram showing sequential steps of forming a hafnium-terbium oxide (Hf 1-x Tb x O) layer, in which a subscript x representing an atomic ratio of terbium (Tb), by employing an atomic layer deposition method in accordance with the first embodiment of the present invention;
  • FIG. 3 is a cross-sectional view of a capacitor formed in the form of concave in accordance with a second embodiment of the present invention.
  • FIG. 4 is a cross-sectional view of a capacitor in the form of inner cylinder in accordance with a third embodiment of the present invention.
  • FIG. 1 is a cross-sectional view illustrating a method for fabricating a cylindrical capacitor in accordance with a first embodiment of the present invention.
  • an oxide layer for forming a capacitor is formed on the above resulting substrate structure and is then etched to form holes exposing the contact plugs 12 B.
  • the metal layer is made of a material selected from a group consisting of titanium nitride (TiN), ruthenium (Ru), tantalum nitride (TaN), tungsten (W), tungsten silicide (WSi), tungsten nitride (WN), ruthenium dioxide (RuO 2 ), iridium (Ir), and platinum (Pt).
  • TiN titanium nitride
  • Ru ruthenium
  • TaN tantalum nitride
  • tungsten W
  • WSi tungsten silicide
  • WN tungsten nitride
  • RuO 2 ruthenium dioxide
  • Ir iridium
  • platinum platinum
  • the lower electrodes 13 are made of polysilicon
  • the lower electrodes 13 are subjected to a cleaning process before a dielectric layer 14 is formed for the purpose of removing a native oxide layer formed on the lower electrodes 13 and blocking hydrogen diffusions.
  • hydrofluoric acid (HF) diluted with water preferably in a ratio of approximately 1 part of HF to approximately 10 parts to approximately 100 parts of water, or a mixed solution of deionized water (DI) and HF that is diluted with ammonium hydroxide (NH 4 OH) in a ratio of 1 part of HF to approximately 5 parts to approximately 500 parts of NH 4 OH is preferably used.
  • DI deionized water
  • NH 4 OH ammonium hydroxide
  • a diffusion barrier layer made of a material selected from a family of silicon nitride (SiN x ) is formed on the lower electrodes 13 in order to prevent silicon or impurities from being diffused into a dielectric layer which will be subsequently formed.
  • the diffusion barrier layer is formed by nitriding a surface of the lower electrodes 13 through performing one of a furnace annealing process and a rapid thermal process (RTP) in an atmosphere of ammonia (NH 3 ) gas.
  • the dielectric layer 14 is formed on the lower electrodes 13 .
  • the dielectric layer 14 is made of hafnium-terbium oxide (Hf 1-x Tb x O) and has a thickness less than approximately 100 ⁇ .
  • a subscript x represents an atomic ratio of Tb.
  • the Hf 1-x Tb x O dielectric layer 14 is formed by employing one of an atomic layer deposition (ALD) method or a low pressure chemical vapor deposition (LPCVD) method.
  • ALD atomic layer deposition
  • LPCVD low pressure chemical vapor deposition
  • such a material as C 16 H 36 HfO 4 , or a precursor of Hf such an organic metal compound as tetrakis-diethylamino-hafnium (TDEAHf) and tetrakis-ethyl methylamino-hafnium (TEMAHf) is used as a source gas of Hf.
  • TDEAHf tetrakis-diethylamino-hafnium
  • TEMAHf tetrakis-ethyl methylamino-hafnium
  • a source gas of Tb such a material as Tb(OC 2 H 5 ) 3 , or a precursor of Tb such a Tb-containing organic-metal compound as Tb(CH 3 ) 3 is used.
  • a reaction gas is selected from a group consisting of O 3 , O 2 plasma gas and water vapor.
  • the atomic ratio of Tb i.e., the subscript x
  • the atomic ratio of Tb is set to be in a range between approximately 0.03 to approximately 0.1 in order to obtain a dielectric constant of the Hf 1-x Tb x O dielectric layer 14 in a range from approximately 30 to approximately 50. That is, if the Hf 1-x Tb x O dielectric layer 14 having a high dielectric constant ranging from approximately 30 to approximately 50 is formed by controlling the Tb content, it is possible to have a thickness of an equivalent oxide layer ranging from approximately 10 ⁇ to approximately 20 ⁇ .
  • a flow rate of each of the Hf and Tb source gases is controlled to be in a range from approximately 50 sccm to approximately 500 sccm. Meanwhile, a flow rate of the reaction gas is controlled to be in a range from approximately 0.1 slm to approximately 1 slm. In case that O 3 is used as the reaction gas, a concentration of the O 3 reaction gas is controlled to be in a range between approximately 220 g/m 3 and approximately 180 g/m 3 .
  • the Hf 1-x Tb x O dielectric layer 14 is formed by employing an ALD method, two cycles respectively for forming a HfO 2 layer and a terbium oxide (Tb x O y ) layer, in which subscripts x and y represent a respective atomic ratio of Tb and O are repeatedly performed.
  • a first cycle for forming the HfO 2 layer includes the sequential steps of providing a source gas of Hf, providing a purge gas such as N 2 or Ar gas, providing a reaction gas of O 3 , and providing a purge gas such as N 2 or Ar gas
  • a second cycle for forming the Tb x O y layer includes the sequential steps of providing a source gas of Tb, providing a purge gas such as N 2 or Ar gas, providing a reaction gas of O 3 , and providing a purge gas such as N 2 or Ar gas.
  • the first and the second cycles are repeated in a respective ratio less than approximately 9 to approximately 1.
  • the number of providing the Hf source gas and that of providing the Tb source gas is set to be in a ratio less than approximately 9 to approximately 1.
  • inorganic metal compounds individually containing Hf and Tb are controlled to have a ratio of Hf and Tb less than approximately 9 to approximately 1 through the use of a flow controller such as a mass flow controller (MFC) and are then vaporized by a vaporizer maintained with a temperature ranging from approximately 150° C. to approximately 300° C. Thereafter, these Hf and Tb source gases are provided to a LPCVD reaction chamber maintained with a temperature ranging from approximately 250° C. to approximately 500° C.
  • MFC mass flow controller
  • the Hf 1-x Tb x O dielectric layer 14 is crystallized by a thermal process to thereby have an improved dielectric characteristic.
  • the thermal process is one of a furnace annealing process and a rapid thermal process (RTP) and proceeds under an increasing or a decreasing pressure and at a temperature ranging from approximately 500° C. to approximately 900° C. in an atmosphere of N 2 , or in an atmosphere of O 2 and N 2 mixed in a ratio less than approximately 1 to approximately 10.
  • this thermal process is performed for the purpose of removing impurities of carbon contained in the Hf 1-x Tb x O dielectric layer.
  • an upper electrode 15 is formed on the Hf 1-x Tb x O dielectric layer 14 by using a metal layer selected from a group consisting of TiN, Ru, TaN, W, WSi, WN, RuO 2 , Ir, IrO 2 , and Pt, or by using a polysilicon layer.
  • a diffusion barrier layer made of a nitride-based material selected from a family of SiN x is formed between the upper electrode 15 and the Hf 1-x Tb x O dielectric layer 14 .
  • the diffusion barrier layer is formed by nitriding the Hf 1-x Tb x O dielectric layer 14 through the use of the same method applied for nitriding the lower electrode 13 .
  • a buffer layer is formed on the upper electrode 15 in order to maintain structural stability to humidity, temperature, or an electric shock. At this time, the buffer layer is made of polysilicon or silicon nitride and has a thickness ranging from approximately 200 ⁇ to approximately 1000 ⁇ .
  • FIG. 2 is a diagram showing the above described cycles of the ALD method for forming a hafnium-terbium oxide (Hf 1-x Tb x O) layer, in which a subscript x represents an atomic ratio of Tb in accordance with the first embodiment of the present invention.
  • each cycle includes steps of sequentially providing a source gas, a purge gas, a reaction gas and a purge gas.
  • the Hf 1-x Tb x O dielectric layer 14 is formed by repeatedly performing two cycles respectively for forming a HfO 2 layer and a terbium oxide (Tb x O y ) layer, in which subscripts x and y represent a respective atomic ratio of Tb and O.
  • a first cycle for forming the HfO 2 layer includes the sequential steps of providing a source gas of Hf, providing a purge gas such as N 2 or Ar gas, providing a reaction gas of O 3 , and providing a purge gas such as N 2 or Ar gas
  • a second cycle for forming the Tb x O y layer includes the sequential steps of providing a source gas of Tb, providing a purge gas such as N 2 or Ar gas, providing a reaction gas of O 3 , and providing a purge gas such as N 2 or Ar gas.
  • the first and the second cycles are repeated in a respective ratio less than approximately 9 to approximately 1. It is also possible to repeatedly perform a cycle including the sequential steps of providing a source gas of Hf, providing a purge gas of N 2 or Ar, providing a source gas of Tb, providing a purge gas of N 2 or Ar, providing a reaction gas of O 3 , and providing a purge gas of N 2 or Ar. At this time, the number of providing the Hf source gas and that of providing the Tb source gas is set to be in a ratio less than approximately 9 to approximately 1.
  • the Hf 1-x Tb x O layer is used as a dielectric layer of the capacitor to thereby obtain an equivalent oxide layer having a thickness (Tox) ranging from approximately 10 ⁇ to approximately 20 ⁇ and a high dielectric constant ranging from approximately 30 to approximately 50.
  • Tox thickness
  • reliability of the dielectric layer can be improved since it is possible to obtain a low level of leakage currents compared with an HfO 2 layer and a pronounced breakdown voltage characteristic.
  • the first embodiment of the present invention exemplifies a case of forming the lower electrode 13 in the form of cylinder
  • the first embodiment of the present invention can be applied to form a lower electrode in a concave type or an inner cylinder type.
  • FIG. 3 shows a case of forming the lower electrode 13 A in the concave type in accordance with a second embodiment of the present invention.
  • FIG. 4 shows a case of forming the lower electrode 13 B in the inner hemispherical grain (HSG) cylinder type in accordance with a third embodiment of the present invention.
  • HSG hemispherical grain
  • the lower electrode 13 A is formed in the presence of a capacitor oxide layer 11 A.
  • the lower electrode 13 B is formed by forming HSG on inner walls of the cylindrical lower electrode.
  • each of the lower electrode 13 A formed in the cylinder type and the lower electrode 13 B formed in the inner cylinder type is made of polysilicon to form the HSG structure or the concavo-convex structure on surfaces of the lower electrodes 13 A and 13 B.
  • the reference numeral 20 in FIGS. 3 and 4 represents this HSG or concavo-convex structure.
  • the dielectric layer made of Hf 1-x Tb x O makes it possible to improve reliability of the dielectric layer and secure a sufficient capacitance of the capacitor.

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Abstract

The present invention relates to a method for fabricating a capacitor in a semiconductor device through the use of hafnium-terbium oxide (Hf1-xTbxO) as a dielectric layer. The method includes the steps of: forming a lower electrode on a substrate; forming an amorphous hafnium-terbium oxide (Hf1-xTbxO) dielectric layer on the lower electrode; crystallizing the Hf1-xTbxO dielectric layer by performing a thermal process; and forming an upper electrode on the Hf1-xTbxO dielectric layer.

Description

    FIELD OF THE INVENTION
  • The present invention relates to a method for fabricating a capacitor in a semiconductor device; and, more particularly, to a method for fabricating a capacitor in a semiconductor device with use of hafnium-terbium oxide.
    • DESCRIPTION OF RELATED ARTS
  • A recent progression in micronization in semiconductor technology has led to acceleration in achieving a large-scale of integration of a memory device. As a result, a unit cell area is decreased and a required operation voltage becomes low. Although the unit cell area is decreased, a capacitance is required to be greater than 25 fF per cell in order to prevent incidences of soft error and shortened refresh time. Therefore, there have been diverse approaches to secure a required capacitance. For instance, in a capacitor for use in a dynamic random access memory (DRAM) device, wherein a silicon nitride (Si3N4) layer formed by employing dichlorosilane (DCS) gas is used as a dielectric layer for the capacitor, a lower electrode is formed in three dimensions and in the form of hemisphere of which surface area is large; and a height of the capacitor is increased.
  • However, the increased height of the capacitor creates a height difference between the cell region and the peripheral region, and this height difference adversely results in a difficulty in securing a depth of focus during a subsequent photo-exposure process. Hence, it is limited to have a capacitance of a capacitor required for the next generation DRAM device with a memory capacitance of over 256 megabytes.
  • Because of this limitation, the development of the capacitor has been currently focused to have an appropriate height along with a sufficient capacitance by using of a dielectric material having a high dielectric constant. Examples of such dielectric material are tantalum oxide (Ta2O5) having a dielectric constant of 25, hafnium oxide (HfO2) having a dielectric constant ranging from 20 to 30 and alumina (Al2O3) having a dielectric constant of 9.
  • Despite of the use of the high dielectric material, a Ta2O5 dielectric layer is susceptible to leakage currents because the Ta2O5 dielectric layer becomes deteriorated by a thermal process performed after the formation of the Ta2O5 layer. Also, it is limited to form an Al2O3 dielectric layer with a sufficient capacitance because of a relatively low dielectric constant of Al2O3 compared with HfO2 and Ta2O5. Further, an HfO2 dielectric layer has a low intensity of breakdown voltage, thereby being susceptible to repeated electric stress. Thus, durability of a capacitor with the HfO2 dielectric layer may become reduced.
    • SUMMARY OF THE INVENTION
  • It is, therefore, an object of the present invention to provide a method for fabricating a capacitor in a semiconductor device capable of improving reliability of a dielectric layer and securing a required capacitance for an operation of a highly integrated device.
  • In accordance with an aspect of the present invention, there is provided a method for fabricating a capacitor in a semiconductor device, including the steps of: forming a lower electrode on a substrate; forming an amorphous hafnium-terbium oxide (Hf1-xTbxO) dielectric layer on the lower electrode; crystallizing the Hf1-xTbxO dielectric layer by performing a thermal process; and forming an upper electrode on the Hf1-xTbxO dielectric layer.
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • The above and other objects and features of the present invention will become better understood with respect to the following description of the preferred embodiments given in conjunction with the accompanying drawings, in which:
  • FIG. 1 is a cross-sectional view describing a method for fabricating a cylindrical capacitor in accordance with a first embodiment of the present invention;
  • FIG. 2 is a diagram showing sequential steps of forming a hafnium-terbium oxide (Hf1-xTbxO) layer, in which a subscript x representing an atomic ratio of terbium (Tb), by employing an atomic layer deposition method in accordance with the first embodiment of the present invention;
  • FIG. 3 is a cross-sectional view of a capacitor formed in the form of concave in accordance with a second embodiment of the present invention; and
  • FIG. 4 is a cross-sectional view of a capacitor in the form of inner cylinder in accordance with a third embodiment of the present invention.
    • DETAILED DESCRIPTION OF THE INVENTION
  • A method for fabricating a capacitor in a semiconductor device in accordance with a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings.
  • FIG. 1 is a cross-sectional view illustrating a method for fabricating a cylindrical capacitor in accordance with a first embodiment of the present invention.
  • As shown, an inter-layer insulation layer 11 made of silicon dioxide (SiO2) is formed on a semi-finished substrate 10. Although not illustrated, the semi-finished substrate 10 is provided with various device elements such as transistors and bit lines by performing predetermined processes for forming such device elements. Then, the inter-layer insulation layer 11 is etched to form contact holes 12A exposing predetermined portions of the substrate 10. A conductive material is deposited into the contact holes 12A and on the inter-layer insulation layer 11 until the contact holes 12A are filled with the conductive material. Afterwards, a chemical mechanical polishing (CMP) process or an etch-back process is performed to form contact plugs 12B connecting a subsequent lower electrode of a capacitor to the substrate 10.
  • Although not illustrated, an oxide layer for forming a capacitor is formed on the above resulting substrate structure and is then etched to form holes exposing the contact plugs 12B.
  • Next, a metal layer or a polysilicon layer for forming a lower electrode is formed on the holes and the oxide layer. Herein, the metal layer is made of a material selected from a group consisting of titanium nitride (TiN), ruthenium (Ru), tantalum nitride (TaN), tungsten (W), tungsten silicide (WSi), tungsten nitride (WN), ruthenium dioxide (RuO2), iridium (Ir), and platinum (Pt). Then, a CMP process or an etch-back process is performed to the above metal or polysilicon layer. Thereafter, the oxide layer is removed to form cylindrical lower electrodes 13.
  • In case that the lower electrodes 13 are made of polysilicon, the lower electrodes 13 are subjected to a cleaning process before a dielectric layer 14 is formed for the purpose of removing a native oxide layer formed on the lower electrodes 13 and blocking hydrogen diffusions. For the cleaning process, hydrofluoric acid (HF) diluted with water preferably in a ratio of approximately 1 part of HF to approximately 10 parts to approximately 100 parts of water, or a mixed solution of deionized water (DI) and HF that is diluted with ammonium hydroxide (NH4OH) in a ratio of 1 part of HF to approximately 5 parts to approximately 500 parts of NH4OH is preferably used.
  • Although not illustrated, a diffusion barrier layer made of a material selected from a family of silicon nitride (SiNx) is formed on the lower electrodes 13 in order to prevent silicon or impurities from being diffused into a dielectric layer which will be subsequently formed. The diffusion barrier layer is formed by nitriding a surface of the lower electrodes 13 through performing one of a furnace annealing process and a rapid thermal process (RTP) in an atmosphere of ammonia (NH3) gas.
  • Also, before and after the above cleaning process, it is possible to perform an additional cleaning process by using a mixed solution of ammonium hydroxide (NH4OH), hydrogen peroxide (H2O2) and water (H2O), a mixed solution of sulfuric acid (H2SO4) and H2O2, or a mixed solution of H2SO4 and H2O in order to remove organic or inorganic particles, or other impurities remaining on the lower electrodes 13 made of polysilicon.
  • Next, the above mentioned dielectric layer 14 is formed on the lower electrodes 13. At this time, the dielectric layer 14 is made of hafnium-terbium oxide (Hf1-xTbxO) and has a thickness less than approximately 100 Å. Herein, a subscript x represents an atomic ratio of Tb.
  • More specifically, the Hf1-xTbxO dielectric layer 14 is formed by employing one of an atomic layer deposition (ALD) method or a low pressure chemical vapor deposition (LPCVD) method. At this time, such a material as C16H36HfO4, or a precursor of Hf such an organic metal compound as tetrakis-diethylamino-hafnium (TDEAHf) and tetrakis-ethyl methylamino-hafnium (TEMAHf) is used as a source gas of Hf. For a source gas of Tb, such a material as Tb(OC2H5)3, or a precursor of Tb such a Tb-containing organic-metal compound as Tb(CH3)3 is used. Also, a reaction gas is selected from a group consisting of O3, O2 plasma gas and water vapor.
  • In addition, since a dielectric constant of the Hf1-xTbxO dielectric layer 14, a level of leakage currents and a breakdown voltage characteristic are determined by a Tb content, the atomic ratio of Tb, i.e., the subscript x, is set to be in a range between approximately 0.03 to approximately 0.1 in order to obtain a dielectric constant of the Hf1-xTbxO dielectric layer 14 in a range from approximately 30 to approximately 50. That is, if the Hf1-xTbxO dielectric layer 14 having a high dielectric constant ranging from approximately 30 to approximately 50 is formed by controlling the Tb content, it is possible to have a thickness of an equivalent oxide layer ranging from approximately 10 Å to approximately 20 Å. As a result of this effect, it is further possible to secure a sufficient capacitance of a capacitor, to have a level of leakage currents lower than a hafnium oxide (HfO2) layer and to have a pronounced breakdown voltage characteristic. Also, since the Hf1-xTbxO dielectric layer 14 has a good thermal stability at a high temperature compared with the HfO2 layer, it is possible to prevent degradation of an electric characteristic during a high thermal process for crystallizing the Hf1-xTbxO dielectric layer 14, thereby improving durability and reliability of a capacitor.
  • Preferably, a flow rate of each of the Hf and Tb source gases is controlled to be in a range from approximately 50 sccm to approximately 500 sccm. Meanwhile, a flow rate of the reaction gas is controlled to be in a range from approximately 0.1 slm to approximately 1 slm. In case that O3 is used as the reaction gas, a concentration of the O3 reaction gas is controlled to be in a range between approximately 220 g/m3 and approximately 180 g/m3.
  • If the Hf1-xTbxO dielectric layer 14 is formed by employing an ALD method, two cycles respectively for forming a HfO2 layer and a terbium oxide (TbxOy) layer, in which subscripts x and y represent a respective atomic ratio of Tb and O are repeatedly performed. Especially, a first cycle for forming the HfO2 layer includes the sequential steps of providing a source gas of Hf, providing a purge gas such as N2 or Ar gas, providing a reaction gas of O3, and providing a purge gas such as N2 or Ar gas, and a second cycle for forming the TbxOy layer includes the sequential steps of providing a source gas of Tb, providing a purge gas such as N2 or Ar gas, providing a reaction gas of O3, and providing a purge gas such as N2 or Ar gas. Particularly, the first and the second cycles are repeated in a respective ratio less than approximately 9 to approximately 1. It is also possible to repeatedly perform a cycle including the sequential steps of providing a source gas of Hf, providing a purge gas of N2 or Ar, providing a source gas of Tb, providing a purge gas of N2 or Ar, providing a reaction gas of O3, and providing a purge gas of N2 or Ar. At this time, the number of providing the Hf source gas and that of providing the Tb source gas is set to be in a ratio less than approximately 9 to approximately 1.
  • If the LPCVD method is used to form the Hf1-xTbxO dielectric layer 14, inorganic metal compounds individually containing Hf and Tb are controlled to have a ratio of Hf and Tb less than approximately 9 to approximately 1 through the use of a flow controller such as a mass flow controller (MFC) and are then vaporized by a vaporizer maintained with a temperature ranging from approximately 150° C. to approximately 300° C. Thereafter, these Hf and Tb source gases are provided to a LPCVD reaction chamber maintained with a temperature ranging from approximately 250° C. to approximately 500° C.
  • Next, the Hf1-xTbxO dielectric layer 14 is crystallized by a thermal process to thereby have an improved dielectric characteristic. Herein, the thermal process is one of a furnace annealing process and a rapid thermal process (RTP) and proceeds under an increasing or a decreasing pressure and at a temperature ranging from approximately 500° C. to approximately 900° C. in an atmosphere of N2, or in an atmosphere of O2 and N2 mixed in a ratio less than approximately 1 to approximately 10. Especially, this thermal process is performed for the purpose of removing impurities of carbon contained in the Hf1-xTbxO dielectric layer.
  • Afterwards, an upper electrode 15 is formed on the Hf1-xTbxO dielectric layer 14 by using a metal layer selected from a group consisting of TiN, Ru, TaN, W, WSi, WN, RuO2, Ir, IrO2, and Pt, or by using a polysilicon layer.
  • Although not illustrated, in case that the upper electrode 15 is made of polysilicon, a diffusion barrier layer made of a nitride-based material selected from a family of SiNx is formed between the upper electrode 15 and the Hf1-xTbxO dielectric layer 14. The diffusion barrier layer is formed by nitriding the Hf1-xTbxO dielectric layer 14 through the use of the same method applied for nitriding the lower electrode 13. Also, although not illustrated, a buffer layer is formed on the upper electrode 15 in order to maintain structural stability to humidity, temperature, or an electric shock. At this time, the buffer layer is made of polysilicon or silicon nitride and has a thickness ranging from approximately 200 Å to approximately 1000 Å.
  • FIG. 2 is a diagram showing the above described cycles of the ALD method for forming a hafnium-terbium oxide (Hf1-xTbxO) layer, in which a subscript x represents an atomic ratio of Tb in accordance with the first embodiment of the present invention. As shown, each cycle includes steps of sequentially providing a source gas, a purge gas, a reaction gas and a purge gas. More specifically, as described above, the Hf1-xTbxO dielectric layer 14 is formed by repeatedly performing two cycles respectively for forming a HfO2 layer and a terbium oxide (TbxOy) layer, in which subscripts x and y represent a respective atomic ratio of Tb and O. A first cycle for forming the HfO2 layer includes the sequential steps of providing a source gas of Hf, providing a purge gas such as N2 or Ar gas, providing a reaction gas of O3, and providing a purge gas such as N2 or Ar gas, and a second cycle for forming the TbxOy layer includes the sequential steps of providing a source gas of Tb, providing a purge gas such as N2 or Ar gas, providing a reaction gas of O3, and providing a purge gas such as N2 or Ar gas.
  • Particularly, the first and the second cycles are repeated in a respective ratio less than approximately 9 to approximately 1. It is also possible to repeatedly perform a cycle including the sequential steps of providing a source gas of Hf, providing a purge gas of N2 or Ar, providing a source gas of Tb, providing a purge gas of N2 or Ar, providing a reaction gas of O3, and providing a purge gas of N2 or Ar. At this time, the number of providing the Hf source gas and that of providing the Tb source gas is set to be in a ratio less than approximately 9 to approximately 1.
  • In accordance with the first embodiment of the present invention, the Hf1-xTbxO layer is used as a dielectric layer of the capacitor to thereby obtain an equivalent oxide layer having a thickness (Tox) ranging from approximately 10 Å to approximately 20 Å and a high dielectric constant ranging from approximately 30 to approximately 50. As a result of this effect, it is possible to secure a sufficient capacitance of the capacitor required for operations of a highly integrated device. Also, reliability of the dielectric layer can be improved since it is possible to obtain a low level of leakage currents compared with an HfO2 layer and a pronounced breakdown voltage characteristic. Furthermore, because of a good thermal stability in a high temperature, it is further possible to improve durability and reliability of the capacitor.
  • Meanwhile, although a case of applying a hemispherical grain structure or a concavo-convex structure to the lower electrode is not exemplified in the first embodiment, it is still possible to maximize a surface area of the capacitor by forming the lower electrode made of polysilicon and then applying the HSG or concavo-convex structure to the lower electrode.
  • Also, although the first embodiment of the present invention exemplifies a case of forming the lower electrode 13 in the form of cylinder, the first embodiment of the present invention can be applied to form a lower electrode in a concave type or an inner cylinder type.
  • FIG. 3 shows a case of forming the lower electrode 13A in the concave type in accordance with a second embodiment of the present invention. Meanwhile, FIG. 4 shows a case of forming the lower electrode 13B in the inner hemispherical grain (HSG) cylinder type in accordance with a third embodiment of the present invention. Herein, the same reference numerals used in the first embodiment are used for the second embodiment and the third embodiment, and detailed description on the formation of the lower electrode 13A in the form of concave type and on that of the lower electrode 13B in the form of inner HSG cylinder type will be omitted. It should be noted that, unlike the cylindrical lower electrode 13 formed under a state that the capacitor oxide layer is removed, the lower electrode 13A is formed in the presence of a capacitor oxide layer 11A. In the mean time, the lower electrode 13B is formed by forming HSG on inner walls of the cylindrical lower electrode.
  • Furthermore, the first embodiment can be identically applied to a case that each of the lower electrode 13A formed in the cylinder type and the lower electrode 13B formed in the inner cylinder type is made of polysilicon to form the HSG structure or the concavo-convex structure on surfaces of the lower electrodes 13A and 13B. The reference numeral 20 in FIGS. 3 and 4 represents this HSG or concavo-convex structure.
  • In accordance with the first to the third preferred embodiments of the present invention, the dielectric layer made of Hf1-xTbxO makes it possible to improve reliability of the dielectric layer and secure a sufficient capacitance of the capacitor.
  • The present application contains subject matter related to the Korean patent application No. KR 2003-0089418, filed in the Korean Patent Office on Dec. 10, 2003, the entire contents of which being incorporated herein by reference.
  • While the present invention has been described with respect to certain preferred embodiments, it will be apparent to those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention as defined in the following claims.

Claims (28)

1. A method for fabricating a capacitor in a semiconductor device, comprising the steps of:
forming a lower electrode on a substrate;
forming an amorphous hafnium-terbium oxide (Hf1-xTbxO) dielectric layer on the lower electrode;
crystallizing the Hf1-xTbxO dielectric layer by performing a thermal process; and
forming an upper electrode on the Hf1-xTbxO dielectric layer.
2. The method of claim 1, wherein a subscript x of the Hf1-xTbxO dielectric layer represents an atomic ratio of terbium (Tb) and has a value ranging from approximately 0.03 to approximately 0.1.
3. The method of claim 1, wherein the Hf1-xTbxO dielectric layer is formed with a thickness less than approximately 100 Å.
4. The method of claim 3, wherein the Hf1-xTbxO dielectric layer is formed by an atomic layer deposition (ALD) method.
5. The method of claim 3, wherein the Hf1-xTbxO dielectric layer is formed by a low pressure chemical vapor deposition (LPCVD) method.
6. The method of claim 4, wherein the Hf1-xTbxO dielectric layer is formed by using a source gas of hafnium (Hf) selected from a group consisting of C16H36HfO4 and Hf-precursors of Hf-containing organic metal compounds.
7. The method of claim 4, wherein the Hf1-xTbxO dielectric layer is formed by using a source gas of Tb selected from a group consisting of Tb(OC2H5)3 and Tb-precursors of Tb-containing organic metal compounds.
8. The method of claim 4, wherein a reaction gas for forming the Hf1-xTbxO dielectric layer is selected from a group consisting of O3 gas, O2 plasma gas and water vapor.
9. The method of claim 6, wherein the Hf-source gas is supplied with a flow rate ranging from approximately 50 sccm to approximately 500 sccm.
10. The method of claim 7, wherein the Tb-source gas is supplied with a flow rate ranging from approximately 50 sccm to approximately 500 sccm.
11. The method of claim 8, wherein the reaction gas is supplied with a flow rate ranging from approximately 0.1 slm to approximately 1 slm.
12. The method of claim 8, wherein if the O3 gas is used as the reaction gas, a concentration of the O3 gas is set to be in a range of approximately 200±20 g/m3.
13. The method of claim 5, wherein the Hf1-xTbxO dielectric layer is formed by using a source gas of hafnium (Hf) selected from a group consisting of C16H36HfO4 and Hf-precursors of Hf-containing organic metal compounds.
14. The method of claim 5, wherein the Hf1-xTbxO dielectric layer is formed by using a source gas of Tb selected from a group consisting of Tb(OC2H5)3 and Tb-precursors of Tb-containing organic metal compounds.
15. The method of claim 5, wherein a reaction gas for forming the Hf1-xTbxO dielectric layer is selected from a group consisting of O3 gas, O2 plasma gas and water vapor.
16. The method of claim 13, wherein the Hf-source gas is supplied with a flow rate ranging from approximately 50 sccm to approximately 500 sccm.
17. The method of claim 14, wherein the Tb-source gas is supplied with a flow rate ranging from approximately 50 sccm to approximately 500 sccm.
18. The method of claim 15, wherein the reaction gas is supplied with a flow rate ranging from approximately 0.1 slm to approximately 1 slm.
19. The method of claim 15, wherein if the O3 gas is used as the reaction gas, a concentration of the O3 gas is set to be in a range of approximately 200±20 g/m3.
20. The method of claim 4, wherein the ALD method for forming the Hf1-xTbxO dielectric layer proceeds by repeatedly performing a cycle for forming a hafnium oxide (HfO2) layer and a cycle for forming a terbium oxide (TbxOy) layer, in which subscripts x and y represent atomic ratios of terbium and oxygen, in a ratio less than approximately 9 to approximately 1.
21. The method of claim 4, wherein the ALD method for forming the Hf1-xTbxO dielectric layer proceeds by repeatedly performing a cycle of sequentially proving a Hf-source gas, a purge gas, a Tb source gas, a purge gas, a reaction gas, and a purge gas under a condition that the Hf source gas and the Tb source gas are provided in a ratio less than approximately 9 to approximately 1.
22. The method of claim 5, wherein the LPCVD method for forming the Hf1-xTbxO dielectric layer proceeds by vaporizing organic metal compounds individually containing Hf and Tb in a respective ratio less than approximately 9 to approximately 1 through the use of a flow quantity controller and providing individually the vaporized organic metal compounds to a reaction chamber for the LPCVD method.
23. The method of claim 22, wherein the reaction chamber for the LPCVD method is maintained with a temperature ranging from approximately 250° C. to approximately 500° C.
24. The method of claim 1, wherein the thermal process is one of a furnace annealing process and a rapid thermal process.
25. The method of claim 1, wherein the thermal process is carried out at a temperature ranging from approximately 500° C. to approximately 900° C. in an atmosphere of N2 under one of an increasing pressure and a decreasing process.
26. The method of claim 1, wherein the thermal process is carried out at a temperature ranging from approximately 500° C. to approximately 900° C. in an atmosphere of O2 and N2 mixed in a ratio less than approximately 1 to 10 under one of an increasing pressure and a decreasing process.
27. The method of claim 1, wherein the lower electrode and the upper electrode are made of polysilicon.
28. The method of claim 1, wherein the lower electrode and the upper electrode are made of a metal selected from a group consisting of TiN, Ru, TaN, W, WSi, WN, RuO2, Ir, IrO2, and Pt.
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US20040245602A1 (en) * 2003-05-21 2004-12-09 Kim Sun Jung Method of fabricating metal-insulator-metal capacitor (MIM) using lanthanide-doped HfO2

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US20040245602A1 (en) * 2003-05-21 2004-12-09 Kim Sun Jung Method of fabricating metal-insulator-metal capacitor (MIM) using lanthanide-doped HfO2
US20060040445A1 (en) * 2004-08-20 2006-02-23 Lee Jung-Hyun Capacitor having a dielectric layer that reduces leakage current and a method of manufacturing the same
US7352022B2 (en) * 2004-08-20 2008-04-01 Samsung Electronics Co., Ltd. Capacitor having a dielectric layer that reduces leakage current and a method of manufacturing the same
US20060115953A1 (en) * 2004-11-29 2006-06-01 Lee Kee J Method for forming capacitor of semiconductor device
US7608517B2 (en) * 2004-11-29 2009-10-27 Hynix Semiconductor Inc. Method for forming capacitor of semiconductor device
US20080237793A1 (en) * 2007-03-28 2008-10-02 Nec Electronics Corporation Semiconductor device having projection on lower electrode and method for forming the same
US7897475B2 (en) * 2007-03-28 2011-03-01 Renesas Electronics Corporation Semiconductor device having projection on lower electrode and method for forming the same
US10141194B1 (en) * 2017-05-24 2018-11-27 United Microeletronics Corp. Manufacturing method of semiconductor structure
CN108110005A (en) * 2017-12-07 2018-06-01 睿力集成电路有限公司 Transistor arrangement, memory cell array and preparation method thereof

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CN1627499A (en) 2005-06-15
CN100483680C (en) 2009-04-29

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