US20050109612A1 - Electroplating apparatus with segmented anode array - Google Patents

Electroplating apparatus with segmented anode array Download PDF

Info

Publication number
US20050109612A1
US20050109612A1 US10974359 US97435904A US2005109612A1 US 20050109612 A1 US20050109612 A1 US 20050109612A1 US 10974359 US10974359 US 10974359 US 97435904 A US97435904 A US 97435904A US 2005109612 A1 US2005109612 A1 US 2005109612A1
Authority
US
Grant status
Application
Patent type
Prior art keywords
electrode
apparatus
reactor vessel
ring
anode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US10974359
Inventor
Daniel Woodruff
Kyle Hanson
Original Assignee
Woodruff Daniel J.
Hanson Kyle M.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/10Electrodes, e.g. composition, counter electrode
    • C25D17/12Shape or form
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001Apparatus specially adapted for plating wafers, e.g. semiconductors, solar cells
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00Electroplating characterised by the article coated
    • C25D7/12Semiconductors
    • C25D7/123Semiconductors coated first with a seed layer, e.g. for filling vias

Abstract

An electroplating apparatus includes a reactor vessel having a segmented anode array positioned therein for effecting electroplating of an associated workpiece such as a semiconductor wafer. The anode array includes a plurality of ring-like anode segments which are preferably positioned in concentric, coplanar relationship with each other. The anode segments can be independently operated to create varying electrical potentials with the associated workpiece to promote uniform deposition of electroplated metal on the surface of the workpiece.

Description

    CROSS-REFERENCE TO RELATED APPLICATIONS
  • Not Applicable.
  • STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT
  • Not applicable.
  • BACKGROUND OF THE INVENTION
  • The present invention relates generally to an electroplating apparatus for plating of semiconductor components, and more particularly to an electroplating apparatus, including a segmented anode array comprising a plurality of concentrically arranged anode segments which can be independently operated to facilitate uniform deposition of electroplated metal on an associated workpiece.
  • Production of semiconductive integrated circuits and other semiconductive devices from semiconductor wafers typically requires formation of multiple metal layers on the wafer to electrically interconnect the various devices of the integrated circuit Electroplated metals typically include copper, nickel, gold and lead. Electroplating is effected by initial formation of a so-called seed layer on the wafer in the form of a very thin layer of metal, whereby the surface of the wafer is rendered electrically conductive. This electroconductivity permits subsequent formation of a so-called blanket layer of the desired metal by electroplating in a reactor vessel. Subsequent processing, such as chemical, mechanical planarization, removes unwanted portions of the metal blanket layer formed during electroplating, resulting in the desired patterned metal layer in a semiconductor integrated circuit or micro-mechanism being formed. Formation of a patterned metal layer can also be effected by electroplating.
  • Subsequent to electroplating, the typical semiconductor wafer or other workpiece is subdivided into a number of individual semiconductor components. In order to achieve the desired formation of circuitry within each component, while achieving the desired uniformity of plating from one component to the next, it is desirable to form each metal layer to a thickness which is as uniform as possible across the surface of the workpiece. However, because each workpiece is typically joined at the peripheral portion thereof in the circuit of the electroplating apparatus (with the workpiece typically functioning as the cathode), variations in current density across the surface of the workpiece are inevitable. In the past, efforts to promote uniformity of metal deposition have included flow-controlling devices, such as diffusers and the like, positioned within the electroplating reactor vessel in order to direct and control the flow of electroplating solution against the workpiece.
  • In a typical electroplating apparatus, an anode of the apparatus (either consumable or non-consumable) is immersed in the electroplating solution within the reactor vessel of the apparatus for creating the desired electrical potential at the surface of the workpiece for effecting metal deposition. Previously employed anodes have typically been generally disk-like in configuration, with electroplating solution directed about the periphery of the anode, and through a perforate diffuser plate positioned generally above, and in spaced relationship to, the anode. The electroplating solution flows through the diffuser plate, and against the associated workpiece held in position above the diffuser. Uniformity of metal deposition is promoted by rotatably driving the workpiece as metal is deposited on its surface.
  • The present invention is directed to an electroplating apparatus having a segmented anode array, including a plurality of anode segments which can be independently operated at different electrical potentials to promote uniformity of deposition of electroplated metal on a associated workpiece.
  • BRIEF SUMMARY OF THE INVENTION
  • An electroplating apparatus embodying the principles of the present invention includes an electroplating reactor vessel which contains a segmented anode array immersed in electroplating solution held by the vessel. The anode array includes differently dimensioned anode segments, preferably comprising concentrically arranged ring-like elements, with the anode segments being independently operable at different electrical potentials. The flow of electroplating solution about the anode segments is controlled in conjunction with independent operation of the segments, with uniformity of electroplated metal deposition on the workpiece thus promoted.
  • In accordance with the illustrated embodiments, the present electroplating apparatus includes an electroplating reactor including a cup-like reactor vessel for holding electroplating solution. A segmented anode array in accordance with the present invention is positioned in the reactor vessel for immersion in the plating solution. The electroplating apparatus includes an associated rotor assembly which can be positioned generally on top of the electroplating reactor, with the rotor assembly configured to receive and retain an associated workpiece such as a semiconductor wafer. The rotor assembly is operable to position the workpiece in generally confronting relationship with the anode array, with the surface of the workpiece in contact with the electroplating solution for effecting deposition of metal on the workpiece. The reactor vessel defines an axis, with the workpiece being positionable in generally transverse relationship to the axis.
  • The anode array comprises a plurality of anode segments having differing dimensions, with the array being operable to facilitate uniform deposition of electroplated metal on the workpiece. In accordance with the illustrated embodiment, the segmented anode array is positioned generally at the lower extent of the reactor vessel in generally perpendicular relationship to the axis defined by the vessel. The anode array comprises a plurality of ring-like, circular anode segments arranged in concentric relationship to each other about the axis. Thus, at least one of the anode segments having a relatively greater dimension is positioned further from the axis than another one of the anode segments having a relatively lesser dimension. In the illustrated embodiment, each of the anode segments is configured to have an annular, ring-shape, with each being generally toroidal. It is presently preferred that the anode segments be generally coplanar, although it will be appreciated that the segments can be otherwise arranged.
  • The anode array includes a mounting base upon which the ring-like anode segments are mounted. The present invention contemplates various arrangements for directing and controlling flow of the associated electroplating solution. In particular, the mounting base can define at least one flow passage for directing flow of electroplating solution through the mounting base. In one form, a central-most one of the anode segments defines an opening aligned with the reactor vessel axis, with the flow passage defined by the mounting base being aligned with the opening in the central anode segment. In another embodiment, flow passages defined by the mounting base are positioned generally between adjacent ones of the anode segments for directing flow of electroplating solution therebetween. In this embodiment, a plurality of flow passages are provided which are arranged in a pattern of concentric circles to direct flow of electroplating solution between adjacent ones of the concentrically arranged anode segments.
  • In an alternate embodiment, the mounting base includes a plurality of depending, flow-modulating projections, defining flow channels therebetween, with the projections arranged generally about the periphery of the mounting base. In the preferred form, the present electroplating apparatus includes a control arrangement operatively connected to the segmented anode array for independently operating the plurality of anode segments. This permits the segments to be operated at different electrical potentials, and for differing periods of time, to facilitate uniform deposition of electroplated metal on the associated workpiece. The present invention contemplates that dielectric elements can also be positioned between at least two adjacent ones of the anode segments for further facilitating uniform deposition of electroplated metal on the workpiece.
  • Other features and advantages of the present invention will become readily apparent from the following detailed description, the accompanying drawings, and the appended claims.
  • BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS
  • FIG. 1 is a perspective view, in partial cross-section, of an electroplating reactor of an electroplating apparatus, including a segmented anode array, embodying the principles of the present invention;
  • FIG. 1 a is a diagrammatic view of a control system for the present electroplating apparatus;
  • FIG. 2 is an exploded perspective view of the segmented anode array illustrated in FIG. 1;
  • FIG. 3 is a top perspective view of the assembled anode array of FIG. 2;
  • FIG. 4 is a bottom perspective view of the anode array illustrated in FIG. 3;
  • FIG. 5 is a cross-sectional view of the anode array illustrated in the preceding FIGURES;
  • FIG. 6 is an exploded perspective view of an alternative embodiment of the present segmented anode array;
  • FIG. 7 is a top perspective view of the assembled segmented anode array illustrated in FIG. 6;
  • FIG. 8 is a bottom perspective view of the anode array illustrated in FIG. 7;
  • FIG. 9 is a cross-sectional view of the segmented anode array illustrated in FIGS. 6-8;
  • FIG. 10 is a top perspective view of a further alternative embodiment of the present segmented anode array;
  • FIG. 11 is a bottom perspective view of the segmented anode array shown in FIG. 10;
  • FIG. 12 is a cross-sectional view of the segmented anode array shown in FIGS. 11 and 12;
  • FIG. 13 is a relatively enlarged, fragmentary cross-sectional view of the segmented anode array shown in FIG. 12; and
  • FIG. 14 is a diagrammatic view of the present electroplating apparatus, with a rotor assembly and associated reactor positioned together for workpiece processing.
  • DETAILED DESCRIPTION OF THE INVENTION
  • While the present invention is susceptible of embodiment in various forms, there is shown in the drawings and will hereinafter be described presently preferred embodiments, with the understanding that the present disclosure is to be considered as an exemplification of the invention, and is not intended to limit the invention to the specific embodiments illustrated.
  • With reference first to FIG. 1, therein is illustrated an electroplating reactor 10 of an electroplating apparatus embodying the present invention. This type of electroplating apparatus is particularly suited for electroplating of semiconductor wafers or like workpieces, whereby an electrically conductive seed layer of the wafer is electroplated with a metallic blanket or patterned layer.
  • The electroplating reactor 10 is that portion of the apparatus which generally contains electroplating solution, and which directs the solution against a generally downwardly facing surface of an associated workpiece, W, to be plated (see FIG. 14). To this end, the reactor 10 includes a reactor vessel or cup 12 through which electroplating solution is circulated. Attendant to solution circulation, the solution flows from the reactor vessel 12, over the weir-like periphery of the vessel, into a lower overflow chamber 14 of the reactor 10. Solution is drawn from the overflow chamber typically to be replenished for re-circulation through the reactor.
  • Reactor 10 includes a riser tube 16, within which an inlet conduit 18 is positioned for introduction of electroplating solution into the reactor vessel. A segmented anode array 20, embodying the principles of the present invention, is positioned generally at the upper extent of the inlet conduit 18 in a manner, as will be further described, which promotes flow of electroplating solution over and about the anode array 20. During processing, a rotor assembly 22 (FIG. 14) which receives and holds a workpiece W for electroplating, is positioned in cooperative association with reactor 10 such that the workpiece W is positioned in generally confronting relationship to the anode array 20. As will be observed, the reactor vessel 12 defines an axis “A” (FIG. 14), with the workpiece W positioned in generally transverse relationship to the axis. Similarly, the anode array 20 is positioned in generally transverse relationship to the axis “A”, preferably perpendicular thereto. While the workpiece W may be positioned perpendicularly to the axis “A”, the illustrated arrangement positions the workpiece W at an acute angle (such as on the order of 2°) relative to the surface of the electroplating solution within the reactor vessel 12 to facilitate venting of gas which can accumulate at the surface of the workpiece. During processing, the workpiece is rotatably driven by drive motor 24 of the rotor assembly for facilitating uniformity of deposition of electroplated metal on the workpiece surface.
  • With particular reference to FIGS. 2-5, the segmented anode array 20 includes a plurality of anode segments having differing dimensions, with at least one of the anode segments having a relatively greater dimension being positioned further from the axis of the reactor vessel than another one of the anode segments having a relatively lesser dimension. In particular, the anode segments comprise circular, ring-like elements, each of which is generally toroidal, and arranged in concentric relationship with each other. As is known in the art, the anode segments may be consumable, whereby metal ions of the anode segments are transported by the electroplating solution to the electrically conductive surface of the associated workpiece, which functions as a cathode.
  • In this illustrated embodiment, the segmented anode array 20 includes four (4) anode segments, respectively designated 30, 32, 34 and 36. The anode segments are of relatively decreasing diameters, with the segments thus fitting one-within-the-other.
  • It is preferred that the anode segments be positioned in generally coplanar relationship with each other, with the segments coaxial with each other along axis “A”. In order to maintain the segments in this relative disposition, the anode array 20 includes a mounting base 40 upon which each of the anode segments is mounted. The mounting base 40 includes a collar portion 42 which defines a flow passage for directing flow of electroplating solution through the mounting base. In this embodiment, the central-most one of the concentric anode segments defines an opening aligned with the axis “A” of the reactor vessel, with the flow passage defined by the collar portion of the mounting base 40 being aligned with the opening defined by this central-most one 36 of the anode segments.
  • Operation of this embodiment of the present invention contemplates that plating solution is pumped through inlet conduit 18, through the flow passage defined by collar portion 42 of mounting base 40, and through the center of the anode array so that the solution impinges upon the surface of the workpiece W. The plating rate at the surface of the workpiece ordinarily will vary radially due to the effect of the impinging solution on the hydrodynamic boundary layer. Compensation of this radial effect can be achieved by operating the anode segments at different electrical potentials. Such an arrangement is diagrammatically illustrated in FIG. 1 a, wherein controls of the present electroplating apparatus include suitable wiring for independently operating the plurality of segments of the anode array 20. It is contemplated that not only can the various anode segments be operating at differing electrical potentials, they may also be operated for differing periods of time to optimize the uniformity of plating on the workpiece.
  • In addition to affecting plating uniformity by using different anode potentials, it is within the purview of the present invention to affect uniformity by the disposition of dielectric (insulating) elements between adjacent ones of the anode segments. This is illustrated in phantom line in FIG. 5, wherein dielectric elements 46 are positioned between each adjacent pair of the anode segments 30, 32, 34 and 36.
  • The geometry of the dielectric elements can be modified to provide the desired effect on plating. Relatively tall geometries, i.e., dielectric elements which project significantly above the associated anode segments, are believed to tend to limit interaction of adjacent ones of the anode segments, and can tend to collimate solution flow to the workpiece. In contrast, shorter or perforated geometries are believed to tend to increase anode segment interaction. While the illustrated embodiments of the present invention show the anode segments positioned in coplanar relationship with each other, and thus, in generally equidistant relationship to the workpiece W, it is believed that an increase or decrease in anode segment interaction can also be achieved by positioning the ring-like anode segments at varying distances from the surface of the workpiece.
  • Depending upon the type of electroplating process, the segments of the anode array may be either consumable, or non-consumable. For those applications requiring a consumable anode, the anode segments can be formed from copper, such as phosphorized copper. In contrast, non-consumable anode segments can be formed from platinum plated titanium.
  • It is contemplated that suitable mechanical fasteners (not shown) be employed for individually securing each of the anode segments to the associated mounting base 40. Additionally, suitable sealed wiring (not shown) is provided for individually electrically connecting each of the anode segments with associated controls of the electroplating apparatus, whereby the electrical potential created by each anode segment can be independently varied and controlled. In this embodiment, it is contemplated that no perforate diffuser member be employed positioned between the anode array 20 and the workpiece W. Solution flow rate and current distribution can be controlled independently of one another to optimize the plating process and promote uniformity of deposition of electroplated metal. Air bubbles introduced into the plating chamber by the incoming plating solution are flushed past the workpiece surface, and thus will not interfere with the plating process. Venting of the workpiece surface, by its angular disposition as discussed above, may also be effected. Solution flow from the center of the anode array insures that the workpiece surface will be wetted from the center to the periphery. This prevents air from being trapped at the center of the workpiece when it first contacts the surface of the solution.
  • As will be appreciated, the use of a segmented anode array having circular anode segments is particularly suited for use with circular, disk-like wafers or like workpieces. However, it is within the purview of the present invention that the anode array, including the anode segments, be non-circular.
  • With reference now to FIGS. 6-9, therein is illustrated an alternate embodiment of the present segmented anode array. In this embodiment, elements which generally correspond to those in the above-described embodiment are designated by like reference numerals in the one-hundred series.
  • Segmented anode array 120 includes a plurality of ring-like anode segments. In this embodiment, five (5) of the anode segments are provided in concentric relationship with each other, including segments 130, 132, 134, 136 and 138.
  • The anode array 120 includes a mounting base 140 having a plurality of divider elements 141 respectively positioned between adjacent ones of the circular anode segments. As in the previous embodiment, the anode segments are positioned in coplanar relationship with each other on the mounting base, and are positioned in coaxial relationship with the axis “A” of the associated reactor vessel.
  • In distinction from the previous embodiment, anode array 120 is configured such that flow of electroplating solution is directed generally about the periphery of the array. In particular, the mounting base 140 includes a plurality of circumferentially spaced depending flow-modulating projections 143 which define flow channels between adjacent ones of the projections. Electroplating solution is introduced into the reactor vessel through an inlet conduit 118, which defines a plurality of flow passages 119 generally at the upper extent thereof, beneath mounting base 140, and inwardly of flow-modulating projections 143. The solution then flows between the flow-modulating projections, and upwardly generally about the anode segments.
  • This embodiment illustrates a series of openings defined by mounting base 140. With particular reference to FIG. 8, those series of holes aligned at 120° intervals about the base portion are configured for receiving respective mechanical fasteners (not shown) for securing the anode segments to the mounting base. The remaining series of radially-spaced openings defined by the mounting base are provided for suitable electrical connection with each individual anode segment.
  • With reference to FIGS. 10-13, another alternate embodiment of the segmented anode array embodying the principles of the present invention is illustrated. Elements of this embodiment, which generally correspond to like elements in the previously described embodiment, are so-designated by like reference numerals in the two-hundred series.
  • Anode array 220 includes a plurality of circular, concentrically arranged ring-like anode segments 230, 232, 234, 236 and 238. The anode segments are positioned in coplanar relationship on a mounting base 240. Notably, this configuration of the anode array is arranged to permit flow of electroplating solution between adjacent ones of the anode segments. To this end, the mounting base 240 defines a plurality of flow passages 245 arranged in a pattern of concentric circles to direct flow of electroplating solution between adjacent ones of the ring-like anode segments. An inlet conduit 218 defines a plurality of flow passages 219 so that plating solution can flow from the inlet conduit through the flow passages 245. This embodiment also includes a flow passage 247 defined by the mounting base 240 for directing flow through an opening defined by the central-most one 238 of the anode segments.
  • From the foregoing, it will be observed that numerous modifications and variations can be effected without departing from the true spirit and scope of the novel concept of the present invention. It will be understood that no limitation with respect to the specific embodiments illustrated herein is intended or should be inferred. The disclosure is intended to cover, by the appended claims, all such modifications as fall within the scope of the claims.

Claims (14)

  1. 1-16. (canceled)
  2. 17. An apparatus for electrochemical processing of microfeature workpieces, comprising:
    a reactor vessel having a central axis generally transverse to a plane defined by a workpiece processing position, and the reactor vessel being configured to contain a flow of electrochemical processing solution; and
    a plurality of independently operable electrodes in the reactor vessel including an innermost electrode and a first outer electrode arranged generally transverse to the central axis, the innermost electrode being a first conductive member having a central opening aligned with the central axis of the reactor vessel and the outer electrode being a second conductive member arranged concentrically with the first conductive member.
  3. 18. The apparatus of claim 17 wherein the first conductive member comprises a first annular conductive member and the second conductive member comprises a second annular conductive member.
  4. 19. The apparatus of claim 18 wherein the first annular conductive member comprises a first conductive ring and the second annular conductive member comprises a second conductive ring.
  5. 20. The apparatus of claim 17 wherein the first electrode is separated from the second electrode by an annular wall.
  6. 21. The apparatus of claim 17 wherein the reactor vessel comprises a cup having a weir, and the apparatus further comprises an overflow collector external to the cup configured to receive processing solution flowing over the weir.
  7. 22. The apparatus of claim 21, further comprising a dielectric separator between the innermost electrode and the first outer electrode, and wherein the weir is at an elevation above the dielectric separator.
  8. 23. The apparatus of claim 17, further comprising a controller operatively coupled to the electrodes, wherein the controller is programmed to apply a first current to the first electrode and a second current different than the first current to the second electrode.
  9. 24. An apparatus for electrochemical processing of microelectronic workpieces, comprising:
    a reactor vessel having a bottom, a sidewall projecting from the bottom, and a generally vertical axis; and
    a plurality of independently operable electrodes in the reactor vessel including an innermost electrode being a first ring-like electrode and a first outer electrode being a second ring-like electrode arranged concentrically with the first ring-like electrode about the vertical axis.
  10. 25. The apparatus of claim 24 wherein the first ring-like electrode is separated from the second ring-like electrode by an annular wall.
  11. 26. The apparatus of claim 24 wherein the first and second ring-like electrodes are carried by an electrode mount in the reactor vessel
  12. 27. The apparatus of claim 24 wherein the apparatus further comprises an overflow chamber having a floor separate from the bottom of the reactor vessel and an exterior wall separate from the sidewall of the reactor vessel, and wherein the overflow chamber is configured to receive a flow of processing solution from the reactor vessel.
  13. 28. The apparatus of claim 24, further comprising a controller operatively coupled to the ring-like electrodes, wherein the controller is programmed to apply a first current to the first ring-like electrode and a second current different than the first current to the second ring-like electrode.
  14. 29. An apparatus for electrochemically processing microelectronic workpieces, comprising:
    means for holding a microelectronic workpiece generally horizontal in a workpiece processing region and for electrically biasing a surface of the workpiece;
    first electrically conductive means for electrically biasing an electrolyte flow at a first potential, the first electrically conductive means having a central opening aligned with a central axis transverse to the center of the holding means; and
    second electrically conductive means for electrically biasing the electrolyte flow at a second potential different than the first potential, wherein the first electrically conductive means is the innermost electrically conductive member relative to the central axis and the second electrically conductive means is concentric with the first electrically conductive means.
US10974359 1998-07-10 2004-10-27 Electroplating apparatus with segmented anode array Abandoned US20050109612A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US09113418 US6497801B1 (en) 1998-07-10 1998-07-10 Electroplating apparatus with segmented anode array
US10234638 US7357850B2 (en) 1998-07-10 2002-09-03 Electroplating apparatus with segmented anode array
US10974359 US20050109612A1 (en) 1998-07-10 2004-10-27 Electroplating apparatus with segmented anode array

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10974359 US20050109612A1 (en) 1998-07-10 2004-10-27 Electroplating apparatus with segmented anode array

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
US10234638 Continuation US7357850B2 (en) 1998-07-10 2002-09-03 Electroplating apparatus with segmented anode array

Publications (1)

Publication Number Publication Date
US20050109612A1 true true US20050109612A1 (en) 2005-05-26

Family

ID=22349292

Family Applications (7)

Application Number Title Priority Date Filing Date
US09113418 Expired - Lifetime US6497801B1 (en) 1998-07-10 1998-07-10 Electroplating apparatus with segmented anode array
US10084962 Abandoned US20030102210A1 (en) 1998-07-10 2002-02-27 Electroplating apparatus with segmented anode array
US10234638 Expired - Lifetime US7357850B2 (en) 1998-07-10 2002-09-03 Electroplating apparatus with segmented anode array
US10974083 Expired - Lifetime US7147760B2 (en) 1998-07-10 2004-10-27 Electroplating apparatus with segmented anode array
US10974359 Abandoned US20050109612A1 (en) 1998-07-10 2004-10-27 Electroplating apparatus with segmented anode array
US11083439 Abandoned US20050161336A1 (en) 1998-07-10 2005-03-17 Electroplating apparatus with segmented anode array
US11083707 Abandoned US20050161320A1 (en) 1998-07-10 2005-03-17 Electroplating apparatus with segmented anode array

Family Applications Before (4)

Application Number Title Priority Date Filing Date
US09113418 Expired - Lifetime US6497801B1 (en) 1998-07-10 1998-07-10 Electroplating apparatus with segmented anode array
US10084962 Abandoned US20030102210A1 (en) 1998-07-10 2002-02-27 Electroplating apparatus with segmented anode array
US10234638 Expired - Lifetime US7357850B2 (en) 1998-07-10 2002-09-03 Electroplating apparatus with segmented anode array
US10974083 Expired - Lifetime US7147760B2 (en) 1998-07-10 2004-10-27 Electroplating apparatus with segmented anode array

Family Applications After (2)

Application Number Title Priority Date Filing Date
US11083439 Abandoned US20050161336A1 (en) 1998-07-10 2005-03-17 Electroplating apparatus with segmented anode array
US11083707 Abandoned US20050161320A1 (en) 1998-07-10 2005-03-17 Electroplating apparatus with segmented anode array

Country Status (1)

Country Link
US (7) US6497801B1 (en)

Families Citing this family (71)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6391166B1 (en) * 1998-02-12 2002-05-21 Acm Research, Inc. Plating apparatus and method
WO1999047731A1 (en) * 1998-03-20 1999-09-23 Semitool, Inc. Apparatus and method for electrolytically depositing copper on a semiconductor workpiece
US6497801B1 (en) * 1998-07-10 2002-12-24 Semitool Inc Electroplating apparatus with segmented anode array
US7264698B2 (en) * 1999-04-13 2007-09-04 Semitool, Inc. Apparatus and methods for electrochemical processing of microelectronic workpieces
US7160421B2 (en) * 1999-04-13 2007-01-09 Semitool, Inc. Turning electrodes used in a reactor for electrochemically processing a microelectronic workpiece
US6916412B2 (en) * 1999-04-13 2005-07-12 Semitool, Inc. Adaptable electrochemical processing chamber
US7189318B2 (en) * 1999-04-13 2007-03-13 Semitool, Inc. Tuning electrodes used in a reactor for electrochemically processing a microelectronic workpiece
WO2000061498A3 (en) * 1999-04-13 2001-01-25 Semitool Inc System for electrochemically processing a workpiece
US6402923B1 (en) * 2000-03-27 2002-06-11 Novellus Systems Inc Method and apparatus for uniform electroplating of integrated circuits using a variable field shaping element
US6527920B1 (en) 2000-05-10 2003-03-04 Novellus Systems, Inc. Copper electroplating apparatus
US8623193B1 (en) 2004-06-16 2014-01-07 Novellus Systems, Inc. Method of electroplating using a high resistance ionic current source
US7622024B1 (en) * 2000-05-10 2009-11-24 Novellus Systems, Inc. High resistance ionic current source
US20060049038A1 (en) * 2003-02-12 2006-03-09 Surfect Technologies, Inc. Dynamic profile anode
US20060011487A1 (en) * 2001-05-31 2006-01-19 Surfect Technologies, Inc. Submicron and nano size particle encapsulation by electrochemical process and apparatus
US20040115340A1 (en) * 2001-05-31 2004-06-17 Surfect Technologies, Inc. Coated and magnetic particles and applications thereof
US6919010B1 (en) 2001-06-28 2005-07-19 Novellus Systems, Inc. Uniform electroplating of thin metal seeded wafers using rotationally asymmetric variable anode correction
US6773571B1 (en) 2001-06-28 2004-08-10 Novellus Systems, Inc. Method and apparatus for uniform electroplating of thin metal seeded wafers using multiple segmented virtual anode sources
US7682498B1 (en) 2001-06-28 2010-03-23 Novellus Systems, Inc. Rotationally asymmetric variable electrode correction
US20030168344A1 (en) * 2002-03-08 2003-09-11 Applied Materials, Inc. Selective metal deposition for electrochemical plating
US6893505B2 (en) * 2002-05-08 2005-05-17 Semitool, Inc. Apparatus and method for regulating fluid flows, such as flows of electrochemical processing fluids
US6776885B2 (en) * 2002-11-14 2004-08-17 International Business Machines Corporation Integrated plating and planarization apparatus having a variable-diameter counterelectrode
US20040099534A1 (en) * 2002-11-27 2004-05-27 James Powers Method and apparatus for electroplating a semiconductor wafer
DE10327578A1 (en) * 2003-06-18 2005-01-13 Micronas Gmbh Method and apparatus for filtering a signal
US7273535B2 (en) * 2003-09-17 2007-09-25 Applied Materials, Inc. Insoluble anode with an auxiliary electrode
JP2007525595A (en) * 2004-02-04 2007-09-06 サーフェクト テクノロジーズ インク. Plating apparatus and method
US7214297B2 (en) * 2004-06-28 2007-05-08 Applied Materials, Inc. Substrate support element for an electrochemical plating cell
US20050284751A1 (en) * 2004-06-28 2005-12-29 Nicolay Kovarsky Electrochemical plating cell with a counter electrode in an isolated anolyte compartment
US7935240B2 (en) * 2005-05-25 2011-05-03 Applied Materials, Inc. Electroplating apparatus and method based on an array of anodes
US8029653B2 (en) * 2006-02-21 2011-10-04 Ebara Corporation Electroplating apparatus and electroplating method
US7655126B2 (en) * 2006-03-27 2010-02-02 Federal Mogul World Wide, Inc. Fabrication of topical stopper on MLS gasket by active matrix electrochemical deposition
JP4976120B2 (en) * 2006-06-14 2012-07-18 日本エレクトロプレイテイング・エンジニヤース株式会社 Wafer plating method
US9822461B2 (en) 2006-08-16 2017-11-21 Novellus Systems, Inc. Dynamic current distribution control apparatus and method for wafer electroplating
US7854828B2 (en) * 2006-08-16 2010-12-21 Novellus Systems, Inc. Method and apparatus for electroplating including remotely positioned second cathode
US8308931B2 (en) 2006-08-16 2012-11-13 Novellus Systems, Inc. Method and apparatus for electroplating
US8475636B2 (en) 2008-11-07 2013-07-02 Novellus Systems, Inc. Method and apparatus for electroplating
US8858774B2 (en) 2008-11-07 2014-10-14 Novellus Systems, Inc. Electroplating apparatus for tailored uniformity profile
US7842173B2 (en) * 2007-01-29 2010-11-30 Semitool, Inc. Apparatus and methods for electrochemical processing of microfeature wafers
US7799684B1 (en) 2007-03-05 2010-09-21 Novellus Systems, Inc. Two step process for uniform across wafer deposition and void free filling on ruthenium coated wafers
US20080289764A1 (en) * 2007-05-25 2008-11-27 International Business Machines Corporation End point detection electrode system and etch station
US8197660B2 (en) * 2007-09-10 2012-06-12 Infineon Technologies Ag Electro chemical deposition systems and methods of manufacturing using the same
US20090114542A1 (en) * 2007-11-06 2009-05-07 Spansion Llc Process of forming an electronic device including depositing a conductive layer over a seed layer
US8513124B1 (en) 2008-03-06 2013-08-20 Novellus Systems, Inc. Copper electroplating process for uniform across wafer deposition and void free filling on semi-noble metal coated wafers
US7964506B1 (en) 2008-03-06 2011-06-21 Novellus Systems, Inc. Two step copper electroplating process with anneal for uniform across wafer deposition and void free filling on ruthenium coated wafers
US8703615B1 (en) 2008-03-06 2014-04-22 Novellus Systems, Inc. Copper electroplating process for uniform across wafer deposition and void free filling on ruthenium coated wafers
US8475637B2 (en) 2008-12-17 2013-07-02 Novellus Systems, Inc. Electroplating apparatus with vented electrolyte manifold
US8262871B1 (en) 2008-12-19 2012-09-11 Novellus Systems, Inc. Plating method and apparatus with multiple internally irrigated chambers
DE102009023769A1 (en) 2009-05-22 2010-11-25 Hübel, Egon, Dipl.-Ing. (FH) Method and apparatus for controlled electrolytic treatment of thin layers
US9714474B2 (en) 2010-04-06 2017-07-25 Tel Nexx, Inc. Seed layer deposition in microscale features
US8795480B2 (en) 2010-07-02 2014-08-05 Novellus Systems, Inc. Control of electrolyte hydrodynamics for efficient mass transfer during electroplating
US9523155B2 (en) 2012-12-12 2016-12-20 Novellus Systems, Inc. Enhancement of electrolyte hydrodynamics for efficient mass transfer during electroplating
US9624592B2 (en) 2010-07-02 2017-04-18 Novellus Systems, Inc. Cross flow manifold for electroplating apparatus
CN102383174B (en) * 2010-09-01 2014-09-24 中芯国际集成电路制造(上海)有限公司 Electroplating anode
US8575028B2 (en) 2011-04-15 2013-11-05 Novellus Systems, Inc. Method and apparatus for filling interconnect structures
US8496790B2 (en) * 2011-05-18 2013-07-30 Applied Materials, Inc. Electrochemical processor
US20130092086A1 (en) * 2011-10-17 2013-04-18 Novellus Systems, Inc. Mechanical suppression of parasitic plasma in substrate processing chamber
CN102492971B (en) * 2011-12-28 2014-09-17 无锡科硅电子技术有限公司 Electroplating apparatus for semiconductor substrate surface
CN102560587B (en) * 2012-02-08 2015-03-18 南通富士通微电子股份有限公司 Electroplating device
US8968533B2 (en) * 2012-05-10 2015-03-03 Applied Materials, Inc Electroplating processor with geometric electrolyte flow path
US9909228B2 (en) 2012-11-27 2018-03-06 Lam Research Corporation Method and apparatus for dynamic current distribution control during electroplating
EP2754735A1 (en) * 2013-01-11 2014-07-16 Elsyca N.V. A device suitable for the electrochemical processing of an object, a holder suitable for such a device and a method for the electrochemical processing of an object
US9677191B2 (en) 2013-01-17 2017-06-13 Elsyca N.V. Device suitable for the electrochemical processing of an object, a holder suitable for such a device, and a method for the electrochemical processing of an object
US9670588B2 (en) 2013-05-01 2017-06-06 Lam Research Corporation Anisotropic high resistance ionic current source (AHRICS)
US9449808B2 (en) 2013-05-29 2016-09-20 Novellus Systems, Inc. Apparatus for advanced packaging applications
US20150090599A1 (en) * 2013-10-02 2015-04-02 Tel Nexx, Inc. Insoluble Anode With a Plurality of Switchable Conductive Elements Used to Control Current Density in a Plating Bath
US9677190B2 (en) 2013-11-01 2017-06-13 Lam Research Corporation Membrane design for reducing defects in electroplating systems
CN104947172B (en) * 2014-03-28 2018-05-29 通用电气公司 Tools and plating method using the plating tool
US9752248B2 (en) 2014-12-19 2017-09-05 Lam Research Corporation Methods and apparatuses for dynamically tunable wafer-edge electroplating
US9567685B2 (en) 2015-01-22 2017-02-14 Lam Research Corporation Apparatus and method for dynamic control of plated uniformity with the use of remote electric current
US9816194B2 (en) 2015-03-19 2017-11-14 Lam Research Corporation Control of electrolyte flow dynamics for uniform electroplating
US10014170B2 (en) 2015-05-14 2018-07-03 Lam Research Corporation Apparatus and method for electrodeposition of metals with the use of an ionically resistive ionically permeable element having spatially tailored resistivity
US9988733B2 (en) 2015-06-09 2018-06-05 Lam Research Corporation Apparatus and method for modulating azimuthal uniformity in electroplating

Citations (96)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1526644A (en) * 1922-10-25 1925-02-17 Williams Brothers Mfg Company Process of electroplating and apparatus therefor
US3309263A (en) * 1964-12-03 1967-03-14 Kimberly Clark Co Web pickup and transfer for a papermaking machine
US3716462A (en) * 1970-10-05 1973-02-13 D Jensen Copper plating on zinc and its alloys
US3798003A (en) * 1972-02-14 1974-03-19 E Ensley Differential microcalorimeter
US3878066A (en) * 1972-09-06 1975-04-15 Manfred Dettke Bath for galvanic deposition of gold and gold alloys
US3930963A (en) * 1971-07-29 1976-01-06 Photocircuits Division Of Kollmorgen Corporation Method for the production of radiant energy imaged printed circuit boards
US4072557A (en) * 1974-12-23 1978-02-07 J. M. Voith Gmbh Method and apparatus for shrinking a travelling web of fibrous material
US4082638A (en) * 1974-09-19 1978-04-04 Jumer John F Apparatus for incremental electro-processing of large areas
US4134802A (en) * 1977-10-03 1979-01-16 Oxy Metal Industries Corporation Electrolyte and method for electrodepositing bright metal deposits
US4137867A (en) * 1977-09-12 1979-02-06 Seiichiro Aigo Apparatus for bump-plating semiconductor wafers
US4246088A (en) * 1979-01-24 1981-01-20 Metal Box Limited Method and apparatus for electrolytic treatment of containers
US4259166A (en) * 1980-03-31 1981-03-31 Rca Corporation Shield for plating substrate
US4323433A (en) * 1980-09-22 1982-04-06 The Boeing Company Anodizing process employing adjustable shield for suspended cathode
US4378283A (en) * 1981-07-30 1983-03-29 National Semiconductor Corporation Consumable-anode selective plating apparatus
US4431361A (en) * 1980-09-02 1984-02-14 Heraeus Quarzschmelze Gmbh Methods of and apparatus for transferring articles between carrier members
US4437943A (en) * 1980-07-09 1984-03-20 Olin Corporation Method and apparatus for bonding metal wire to a base metal substrate
US4440597A (en) * 1982-03-15 1984-04-03 The Procter & Gamble Company Wet-microcontracted paper and concomitant process
US4443117A (en) * 1980-09-26 1984-04-17 Terumo Corporation Measuring apparatus, method of manufacture thereof, and method of writing data into same
US4495153A (en) * 1981-06-12 1985-01-22 Nissan Motor Company, Limited Catalytic converter for treating engine exhaust gases
US4495453A (en) * 1981-06-26 1985-01-22 Fujitsu Fanuc Limited System for controlling an industrial robot
US4500394A (en) * 1984-05-16 1985-02-19 At&T Technologies, Inc. Contacting a surface for plating thereon
US4566847A (en) * 1982-03-01 1986-01-28 Kabushiki Kaisha Daini Seikosha Industrial robot
US4576685A (en) * 1985-04-23 1986-03-18 Schering Ag Process and apparatus for plating onto articles
US4576689A (en) * 1979-06-19 1986-03-18 Makkaev Almaxud M Process for electrochemical metallization of dielectrics
US4585539A (en) * 1982-08-17 1986-04-29 Technic, Inc. Electrolytic reactor
US4634503A (en) * 1984-06-27 1987-01-06 Daniel Nogavich Immersion electroplating system
US4639028A (en) * 1984-11-13 1987-01-27 Economic Development Corporation High temperature and acid resistant wafer pick up device
US4648944A (en) * 1985-07-18 1987-03-10 Martin Marietta Corporation Apparatus and method for controlling plating induced stress in electroforming and electroplating processes
US4800818A (en) * 1985-11-02 1989-01-31 Hitachi Kiden Kogyo Kabushiki Kaisha Linear motor-driven conveyor means
US4898647A (en) * 1985-12-24 1990-02-06 Gould, Inc. Process and apparatus for electroplating copper foil
US4902398A (en) * 1988-04-27 1990-02-20 American Thim Film Laboratories, Inc. Computer program for vacuum coating systems
US4906341A (en) * 1987-09-24 1990-03-06 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor device and apparatus therefor
US4913035A (en) * 1989-08-16 1990-04-03 Duh Gabri C B Apparatus for mist prevention in car windshields
US4988533A (en) * 1988-05-27 1991-01-29 Texas Instruments Incorporated Method for deposition of silicon oxide on a wafer
US5000827A (en) * 1990-01-02 1991-03-19 Motorola, Inc. Method and apparatus for adjusting plating solution flow characteristics at substrate cathode periphery to minimize edge effect
US5078852A (en) * 1990-10-12 1992-01-07 Microelectronics And Computer Technology Corporation Plating rack
US5083364A (en) * 1987-10-20 1992-01-28 Convac Gmbh System for manufacturing semiconductor substrates
US5096550A (en) * 1990-10-15 1992-03-17 The United States Of America As Represented By The United States Department Of Energy Method and apparatus for spatially uniform electropolishing and electrolytic etching
US5178512A (en) * 1991-04-01 1993-01-12 Equipe Technologies Precision robot apparatus
US5178639A (en) * 1990-06-28 1993-01-12 Tokyo Electron Sagami Limited Vertical heat-treating apparatus
US5180273A (en) * 1989-10-09 1993-01-19 Kabushiki Kaisha Toshiba Apparatus for transferring semiconductor wafers
US5183377A (en) * 1988-05-31 1993-02-02 Mannesmann Ag Guiding a robot in an array
US5186594A (en) * 1990-04-19 1993-02-16 Applied Materials, Inc. Dual cassette load lock
US5302464A (en) * 1991-03-04 1994-04-12 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Method of plating a bonded magnet and a bonded magnet carrying a metal coating
US5301700A (en) * 1992-03-05 1994-04-12 Tokyo Electron Limited Washing system
US5306895A (en) * 1991-03-26 1994-04-26 Ngk Insulators, Ltd. Corrosion-resistant member for chemical apparatus using halogen series corrosive gas
US5377708A (en) * 1989-03-27 1995-01-03 Semitool, Inc. Multi-station semiconductor processor with volatilization
US5388945A (en) * 1992-08-04 1995-02-14 International Business Machines Corporation Fully automated and computerized conveyor based manufacturing line architectures adapted to pressurized sealable transportable containers
US5391285A (en) * 1994-02-25 1995-02-21 Motorola, Inc. Adjustable plating cell for uniform bump plating of semiconductor wafers
US5391517A (en) * 1993-09-13 1995-02-21 Motorola Inc. Process for forming copper interconnect structure
US5405518A (en) * 1994-04-26 1995-04-11 Industrial Technology Research Institute Workpiece holder apparatus
US5489341A (en) * 1993-08-23 1996-02-06 Semitool, Inc. Semiconductor processing with non-jetting fluid stream discharge array
US5500081A (en) * 1990-05-15 1996-03-19 Bergman; Eric J. Dynamic semiconductor wafer processing using homogeneous chemical vapors
US5501768A (en) * 1992-04-17 1996-03-26 Kimberly-Clark Corporation Method of treating papermaking fibers for making tissue
US5508095A (en) * 1993-11-16 1996-04-16 Scapa Group Plc Papermachine clothing
US5512319A (en) * 1994-08-22 1996-04-30 Basf Corporation Polyurethane foam composite
US5593545A (en) * 1995-02-06 1997-01-14 Kimberly-Clark Corporation Method for making uncreped throughdried tissue products without an open draw
US5597460A (en) * 1995-11-13 1997-01-28 Reynolds Tech Fabricators, Inc. Plating cell having laminar flow sparger
US5597836A (en) * 1991-09-03 1997-01-28 Dowelanco N-(4-pyridyl) (substituted phenyl) acetamide pesticides
US5600532A (en) * 1994-04-11 1997-02-04 Ngk Spark Plug Co., Ltd. Thin-film condenser
US5609239A (en) * 1994-03-21 1997-03-11 Thyssen Aufzuege Gmbh Locking system
US5620581A (en) * 1995-11-29 1997-04-15 Aiwa Research And Development, Inc. Apparatus for electroplating metal films including a cathode ring, insulator ring and thief ring
US5711646A (en) * 1994-10-07 1998-01-27 Tokyo Electron Limited Substrate transfer apparatus
US5723028A (en) * 1990-08-01 1998-03-03 Poris; Jaime Electrodeposition apparatus with virtual anode
US5731678A (en) * 1996-07-15 1998-03-24 Semitool, Inc. Processing head for semiconductor processing machines
US5871805A (en) * 1996-04-08 1999-02-16 Lemelson; Jerome Computer controlled vapor deposition processes
US5871626A (en) * 1995-09-27 1999-02-16 Intel Corporation Flexible continuous cathode contact circuit for electrolytic plating of C4, TAB microbumps, and ultra large scale interconnects
US5882498A (en) * 1997-10-16 1999-03-16 Advanced Micro Devices, Inc. Method for reducing oxidation of electroplating chamber contacts and improving uniform electroplating of a substrate
US5892207A (en) * 1995-12-01 1999-04-06 Teisan Kabushiki Kaisha Heating and cooling apparatus for reaction chamber
US6017820A (en) * 1998-07-17 2000-01-25 Cutek Research, Inc. Integrated vacuum and plating cluster system
US6027631A (en) * 1997-11-13 2000-02-22 Novellus Systems, Inc. Electroplating system with shields for varying thickness profile of deposited layer
US6028986A (en) * 1995-11-10 2000-02-22 Samsung Electronics Co., Ltd. Methods of designing and fabricating intergrated circuits which take into account capacitive loading by the intergrated circuit potting material
US6051284A (en) * 1996-05-08 2000-04-18 Applied Materials, Inc. Chamber monitoring and adjustment by plasma RF metrology
US6053687A (en) * 1997-09-05 2000-04-25 Applied Materials, Inc. Cost effective modular-linear wafer processing
US6168695B1 (en) * 1999-07-12 2001-01-02 Daniel J. Woodruff Lift and rotate assembly for use in a workpiece processing station and a method of attaching the same
US6174796B1 (en) * 1998-01-30 2001-01-16 Fujitsu Limited Semiconductor device manufacturing method
US6174425B1 (en) * 1997-05-14 2001-01-16 Motorola, Inc. Process for depositing a layer of material over a substrate
US6179983B1 (en) * 1997-11-13 2001-01-30 Novellus Systems, Inc. Method and apparatus for treating surface including virtual anode
US6184068B1 (en) * 1994-06-02 2001-02-06 Semiconductor Energy Laboratory Co., Ltd. Process for fabricating semiconductor device
US6193859B1 (en) * 1997-11-13 2001-02-27 Novellus Systems, Inc. Electric potential shaping apparatus for holding a semiconductor wafer during electroplating
US6199301B1 (en) * 1997-01-22 2001-03-13 Industrial Automation Services Pty. Ltd. Coating thickness control
US6218097B1 (en) * 1998-09-03 2001-04-17 Agfa-Gevaert Color photographic silver halide material
US6221230B1 (en) * 1997-05-15 2001-04-24 Hiromitsu Takeuchi Plating method and apparatus
US20020008037A1 (en) * 1999-04-13 2002-01-24 Wilson Gregory J. System for electrochemically processing a workpiece
US20020008036A1 (en) * 1998-02-12 2002-01-24 Hui Wang Plating apparatus and method
US20020032499A1 (en) * 1999-04-13 2002-03-14 Wilson Gregory J. Tuning electrodes used in a reactor for electrochemically processing a microelectronic workpiece
US6365729B1 (en) * 1999-05-24 2002-04-02 The Public Health Research Institute Of The City Of New York, Inc. High specificity primers, amplification methods and kits
US20020046952A1 (en) * 1998-01-06 2002-04-25 Graham Lyndon W. Electroplating system having auxiliary electrode exterior to main reactor chamber for contact cleaning operations
US20030038035A1 (en) * 2001-05-30 2003-02-27 Wilson Gregory J. Methods and systems for controlling current in electrochemical processing of microelectronic workpieces
US20030062258A1 (en) * 1998-07-10 2003-04-03 Woodruff Daniel J. Electroplating apparatus with segmented anode array
US20030070918A1 (en) * 2001-08-31 2003-04-17 Hanson Kyle M. Apparatus and methods for electrochemical processing of microelectronic workpieces
US6672820B1 (en) * 1996-07-15 2004-01-06 Semitool, Inc. Semiconductor processing apparatus having linear conveyer system
US6678055B2 (en) * 2001-11-26 2004-01-13 Tevet Process Control Technologies Ltd. Method and apparatus for measuring stress in semiconductor wafers
US20040031693A1 (en) * 1998-03-20 2004-02-19 Chen Linlin Apparatus and method for electrochemically depositing metal on a semiconductor workpiece
US6699373B2 (en) * 1998-07-10 2004-03-02 Semitool, Inc. Apparatus for processing the surface of a microelectronic workpiece
US6709562B1 (en) * 1995-12-29 2004-03-23 International Business Machines Corporation Method of making electroplated interconnection structures on integrated circuit chips

Family Cites Families (109)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1881713A (en) * 1928-12-03 1932-10-11 Arthur K Laukel Flexible and adjustable anode
US2256274A (en) * 1938-06-30 1941-09-16 Firm J D Riedel E De Haen A G Salicylic acid sulphonyl sulphanilamides
US3616284A (en) * 1968-08-21 1971-10-26 Bell Telephone Labor Inc Processing arrays of junction devices
US3664933A (en) * 1969-06-19 1972-05-23 Udylite Corp Process for acid copper plating of zinc
US3706651A (en) * 1970-12-30 1972-12-19 Us Navy Apparatus for electroplating a curved surface
US3798033A (en) * 1971-05-11 1974-03-19 Spectral Data Corp Isoluminous additive color multispectral display
BE791401A (en) * 1971-11-15 1973-05-14 Monsanto Co Compositions and Electrochemical Processes
US4022679A (en) * 1973-05-10 1977-05-10 C. Conradty Coated titanium anode for amalgam heavy duty cells
US3968885A (en) * 1973-06-29 1976-07-13 International Business Machines Corporation Method and apparatus for handling workpieces
US3880725A (en) * 1974-04-10 1975-04-29 Rca Corp Predetermined thickness profiles through electroplating
US4000046A (en) * 1974-12-23 1976-12-28 P. R. Mallory & Co., Inc. Method of electroplating a conductive layer over an electrolytic capacitor
US4046105A (en) * 1975-06-16 1977-09-06 Xerox Corporation Laminar deep wave generator
US4032422A (en) * 1975-10-03 1977-06-28 National Semiconductor Corporation Apparatus for plating semiconductor chip headers
US4030015A (en) * 1975-10-20 1977-06-14 International Business Machines Corporation Pulse width modulated voltage regulator-converter/power converter having push-push regulator-converter means
US4165252A (en) * 1976-08-30 1979-08-21 Burroughs Corporation Method for chemically treating a single side of a workpiece
US4132567A (en) * 1977-10-13 1979-01-02 Fsi Corporation Apparatus for and method of cleaning and removing static charges from substrates
US4170959A (en) * 1978-04-04 1979-10-16 Seiichiro Aigo Apparatus for bump-plating semiconductor wafers
US4341629A (en) * 1978-08-28 1982-07-27 Sand And Sea Industries, Inc. Means for desalination of water through reverse osmosis
US4222834A (en) * 1979-06-06 1980-09-16 Western Electric Company, Inc. Selectively treating an article
JPS5740918B2 (en) * 1979-08-09 1982-08-31
US4422915A (en) * 1979-09-04 1983-12-27 Battelle Memorial Institute Preparation of colored polymeric film-like coating
US4238310A (en) * 1979-10-03 1980-12-09 United Technologies Corporation Apparatus for electrolytic etching
US4304641A (en) * 1980-11-24 1981-12-08 International Business Machines Corporation Rotary electroplating cell with controlled current distribution
EP0058649A1 (en) * 1981-02-16 1982-08-25 Aktiebolaget Europa Film Apparatus in electrodeposition plants, particularly for use in making master phonograph records and the like
US4360410A (en) * 1981-03-06 1982-11-23 Western Electric Company, Inc. Electroplating processes and equipment utilizing a foam electrolyte
US4384930A (en) * 1981-08-21 1983-05-24 Mcgean-Rohco, Inc. Electroplating baths, additives therefor and methods for the electrodeposition of metals
US4463503A (en) * 1981-09-29 1984-08-07 Driall, Inc. Grain drier and method of drying grain
JPH0233140B2 (en) * 1982-02-03 1990-07-25 Konishiroku Photo Ind
US4475823A (en) * 1982-04-09 1984-10-09 Piezo Electric Products, Inc. Self-calibrating thermometer
US4449885A (en) * 1982-05-24 1984-05-22 Varian Associates, Inc. Wafer transfer system
US4451197A (en) * 1982-07-26 1984-05-29 Advanced Semiconductor Materials Die Bonding, Inc. Object detection apparatus and method
US4439243A (en) * 1982-08-03 1984-03-27 Texas Instruments Incorporated Apparatus and method of material removal with fluid flow within a slot
US4439244A (en) * 1982-08-03 1984-03-27 Texas Instruments Incorporated Apparatus and method of material removal having a fluid filled slot
US4514269A (en) * 1982-08-06 1985-04-30 Alcan International Limited Metal production by electrolysis of a molten electrolyte
US4541895A (en) * 1982-10-29 1985-09-17 Scapa Inc. Papermakers fabric of nonwoven layers in a laminated construction
JPS59150094A (en) * 1983-02-14 1984-08-28 Teichiku Kk Disc type rotary plating device
US4982753A (en) * 1983-07-26 1991-01-08 National Semiconductor Corporation Wafer etching, cleaning and stripping apparatus
US4529480A (en) 1983-08-23 1985-07-16 The Procter & Gamble Company Tissue paper
US4469566A (en) * 1983-08-29 1984-09-04 Dynamic Disk, Inc. Method and apparatus for producing electroplated magnetic memory disk, and the like
US4864239A (en) * 1983-12-05 1989-09-05 General Electric Company Cylindrical bearing inspection
US4466864A (en) * 1983-12-16 1984-08-21 At&T Technologies, Inc. Methods of and apparatus for electroplating preselected surface regions of electrical articles
DE8430403U1 (en) * 1984-10-16 1985-04-25 Gebr. Steimel, 5202 Hennef, De centrifuge
DE3500005A1 (en) 1985-01-02 1986-07-10 Esb Voehringer Coating booth for coating the surface of workpieces with coating powder
US4604178A (en) * 1985-03-01 1986-08-05 The Dow Chemical Company Anode
US4685414A (en) * 1985-04-03 1987-08-11 Dirico Mark A Coating printed sheets
US4760671A (en) * 1985-08-19 1988-08-02 Owens-Illinois Television Products Inc. Method of and apparatus for automatically grinding cathode ray tube faceplates
FR2587915B1 (en) * 1985-09-27 1987-11-27 Omya Sa Device for the fluid contacting being in the form of different phases
US4949671A (en) * 1985-10-24 1990-08-21 Texas Instruments Incorporated Processing apparatus and method
US4715934A (en) * 1985-11-18 1987-12-29 Lth Associates Process and apparatus for separating metals from solutions
US4761214A (en) * 1985-11-27 1988-08-02 Airfoil Textron Inc. ECM machine with mechanisms for venting and clamping a workpart shroud
US4687552A (en) * 1985-12-02 1987-08-18 Tektronix, Inc. Rhodium capped gold IC metallization
US4849054A (en) * 1985-12-04 1989-07-18 James River-Norwalk, Inc. High bulk, embossed fiber sheet material and apparatus and method of manufacturing the same
US4696729A (en) * 1986-02-28 1987-09-29 International Business Machines Electroplating cell
US4670126A (en) * 1986-04-28 1987-06-02 Varian Associates, Inc. Sputter module for modular wafer processing system
US4924890A (en) * 1986-05-16 1990-05-15 Eastman Kodak Company Method and apparatus for cleaning semiconductor wafers
US4770590A (en) * 1986-05-16 1988-09-13 Silicon Valley Group, Inc. Method and apparatus for transferring wafers between cassettes and a boat
US4732785A (en) * 1986-09-26 1988-03-22 Motorola, Inc. Edge bead removal process for spin on films
US4951601A (en) * 1986-12-19 1990-08-28 Applied Materials, Inc. Multi-chamber integrated process system
US5389496A (en) * 1987-03-06 1995-02-14 Rohm And Haas Company Processes and compositions for electroless metallization
US5024746A (en) 1987-04-13 1991-06-18 Texas Instruments Incorporated Fixture and a method for plating contact bumps for integrated circuits
US4858539A (en) * 1987-05-04 1989-08-22 Veb Kombinat Polygraph "Werner Lamberz" Leipzig Rotational switching apparatus with separately driven stitching head
DE3719952C2 (en) 1987-06-15 1989-05-03 Convac Gmbh, 7135 Wiernsheim, De
US4781800A (en) * 1987-09-29 1988-11-01 President And Fellows Of Harvard College Deposition of metal or alloy film
JP2508540B2 (en) * 1987-11-02 1996-06-19 三菱マテリアル株式会社 Weblog - Ha of the position detecting device
EP0316296B1 (en) * 1987-11-09 1994-04-13 SEZ Semiconductor-Equipment Zubehör für die Halbleiterfertigung Gesellschaft m.b.H. Holder for disc-like articles, and device for etching silicon chips with such a holder
JPH01125821A (en) * 1987-11-10 1989-05-18 Matsushita Electric Ind Co Ltd Vapor growth device
US4828654A (en) * 1988-03-23 1989-05-09 Protocad, Inc. Variable size segmented anode array for electroplating
US4868992A (en) * 1988-04-22 1989-09-26 Intel Corporation Anode cathode parallelism gap gauge
US5048589A (en) 1988-05-18 1991-09-17 Kimberly-Clark Corporation Non-creped hand or wiper towel
US4959278A (en) * 1988-06-16 1990-09-25 Nippon Mining Co., Ltd. Tin whisker-free tin or tin alloy plated article and coating technique thereof
US5054988A (en) 1988-07-13 1991-10-08 Tel Sagami Limited Apparatus for transferring semiconductor wafers
US5393624A (en) * 1988-07-29 1995-02-28 Tokyo Electron Limited Method and apparatus for manufacturing a semiconductor device
JPH0516016B2 (en) * 1988-08-31 1993-03-03 Tokyo Shibaura Electric Co
US5026239A (en) 1988-09-06 1991-06-25 Canon Kabushiki Kaisha Mask cassette and mask cassette loading device
US5061144A (en) 1988-11-30 1991-10-29 Tokyo Electron Limited Resist process apparatus
US5146136A (en) * 1988-12-19 1992-09-08 Hitachi, Ltd. Magnetron having identically shaped strap rings separated by a gap and connecting alternate anode vane groups
GB9002839D0 (en) * 1990-02-08 1990-04-04 Lucas Ind Plc Fuel injection nozzle
US5069548A (en) 1990-08-08 1991-12-03 Industrial Technology Institute Field shift moire system
US5270222A (en) * 1990-12-31 1993-12-14 Texas Instruments Incorporated Method and apparatus for semiconductor device fabrication diagnosis and prognosis
US5055036A (en) 1991-02-26 1991-10-08 Tokyo Electron Sagami Limited Method of loading and unloading wafer boat
JPH04311591A (en) * 1991-04-08 1992-11-04 Sumitomo Metal Ind Ltd Device and method for plating
US5156730A (en) * 1991-06-25 1992-10-20 International Business Machines Electrode array and use thereof
US5217586A (en) * 1992-01-09 1993-06-08 International Business Machines Corporation Electrochemical tool for uniform metal removal during electropolishing
US5316642A (en) * 1993-04-22 1994-05-31 Digital Equipment Corporation Oscillation device for plating system
US6042712A (en) * 1995-05-26 2000-03-28 Formfactor, Inc. Apparatus for controlling plating over a face of a substrate
JP3388628B2 (en) * 1994-03-24 2003-03-24 タツモ株式会社 Rotary chemical processing apparatus
US5718763A (en) * 1994-04-04 1998-02-17 Tokyo Electron Limited Resist processing apparatus for a rectangular substrate
JP3610606B2 (en) * 1994-12-27 2005-01-19 オイレス工業株式会社 Cam press mold
JPH08238463A (en) * 1995-03-03 1996-09-17 Ebara Corp Cleaning method and cleaning apparatus
US5882433A (en) * 1995-05-23 1999-03-16 Tokyo Electron Limited Spin cleaning method
US5670034A (en) * 1995-07-11 1997-09-23 American Plating Systems Reciprocating anode electrolytic plating apparatus and method
US6194628B1 (en) * 1995-09-25 2001-02-27 Applied Materials, Inc. Method and apparatus for cleaning a vacuum line in a CVD system
US6187072B1 (en) * 1995-09-25 2001-02-13 Applied Materials, Inc. Method and apparatus for reducing perfluorocompound gases from substrate processing equipment emissions
US6193802B1 (en) * 1995-09-25 2001-02-27 Applied Materials, Inc. Parallel plate apparatus for in-situ vacuum line cleaning for substrate processing equipment
US5860640A (en) * 1995-11-29 1999-01-19 Applied Materials, Inc. Semiconductor wafer alignment member and clamp ring
US5872633A (en) * 1996-07-26 1999-02-16 Speedfam Corporation Methods and apparatus for detecting removal of thin film layers during planarization
JPH10303106A (en) * 1997-04-30 1998-11-13 Toshiba Corp Development processing device and its processing method
US6017437A (en) * 1997-08-22 2000-01-25 Cutek Research, Inc. Process chamber and method for depositing and/or removing material on a substrate
US6024856A (en) * 1997-10-10 2000-02-15 Enthone-Omi, Inc. Copper metallization of silicon wafers using insoluble anodes
US6168693B1 (en) * 1998-01-22 2001-01-02 International Business Machines Corporation Apparatus for controlling the uniformity of an electroplated workpiece
US7244677B2 (en) * 1998-02-04 2007-07-17 Semitool. Inc. Method for filling recessed micro-structures with metallization in the production of a microelectronic device
US6350319B1 (en) * 1998-03-13 2002-02-26 Semitool, Inc. Micro-environment reactor for processing a workpiece
EP0991795B1 (en) * 1998-04-21 2006-02-22 Applied Materials, Inc. Electro-chemical deposition system and method of electroplating on substrates
US6025600A (en) * 1998-05-29 2000-02-15 International Business Machines Corporation Method for astigmatism correction in charged particle beam systems
EP0965574B1 (en) * 1998-06-19 2004-10-13 Degussa AG Process for enantioselective hydrogenation
WO2000040779A8 (en) * 1998-12-31 2001-02-22 Semitool Inc Method, chemistry, and apparatus for high deposition rate solder electroplating on a microelectronic workpiece
US6190234B1 (en) * 1999-01-25 2001-02-20 Applied Materials, Inc. Endpoint detection with light beams of different wavelengths
WO2002004887A9 (en) * 2000-07-08 2003-04-03 Semitool Inc Methods and apparatus for processing microelectronic workpieces using metrology
US6344491B1 (en) * 1999-09-16 2002-02-05 Syntroleum Corporation Method for operating a fischer-tropsch process using a high pressure autothermal reactor as the pressure source for the process

Patent Citations (99)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1526644A (en) * 1922-10-25 1925-02-17 Williams Brothers Mfg Company Process of electroplating and apparatus therefor
US3309263A (en) * 1964-12-03 1967-03-14 Kimberly Clark Co Web pickup and transfer for a papermaking machine
US3716462A (en) * 1970-10-05 1973-02-13 D Jensen Copper plating on zinc and its alloys
US3930963A (en) * 1971-07-29 1976-01-06 Photocircuits Division Of Kollmorgen Corporation Method for the production of radiant energy imaged printed circuit boards
US3798003A (en) * 1972-02-14 1974-03-19 E Ensley Differential microcalorimeter
US3878066A (en) * 1972-09-06 1975-04-15 Manfred Dettke Bath for galvanic deposition of gold and gold alloys
US4082638A (en) * 1974-09-19 1978-04-04 Jumer John F Apparatus for incremental electro-processing of large areas
US4072557A (en) * 1974-12-23 1978-02-07 J. M. Voith Gmbh Method and apparatus for shrinking a travelling web of fibrous material
US4137867A (en) * 1977-09-12 1979-02-06 Seiichiro Aigo Apparatus for bump-plating semiconductor wafers
US4134802A (en) * 1977-10-03 1979-01-16 Oxy Metal Industries Corporation Electrolyte and method for electrodepositing bright metal deposits
US4246088A (en) * 1979-01-24 1981-01-20 Metal Box Limited Method and apparatus for electrolytic treatment of containers
US4576689A (en) * 1979-06-19 1986-03-18 Makkaev Almaxud M Process for electrochemical metallization of dielectrics
US4259166A (en) * 1980-03-31 1981-03-31 Rca Corporation Shield for plating substrate
US4437943A (en) * 1980-07-09 1984-03-20 Olin Corporation Method and apparatus for bonding metal wire to a base metal substrate
US4431361A (en) * 1980-09-02 1984-02-14 Heraeus Quarzschmelze Gmbh Methods of and apparatus for transferring articles between carrier members
US4323433A (en) * 1980-09-22 1982-04-06 The Boeing Company Anodizing process employing adjustable shield for suspended cathode
US4443117A (en) * 1980-09-26 1984-04-17 Terumo Corporation Measuring apparatus, method of manufacture thereof, and method of writing data into same
US4495153A (en) * 1981-06-12 1985-01-22 Nissan Motor Company, Limited Catalytic converter for treating engine exhaust gases
US4495453A (en) * 1981-06-26 1985-01-22 Fujitsu Fanuc Limited System for controlling an industrial robot
US4378283A (en) * 1981-07-30 1983-03-29 National Semiconductor Corporation Consumable-anode selective plating apparatus
US4566847A (en) * 1982-03-01 1986-01-28 Kabushiki Kaisha Daini Seikosha Industrial robot
US4440597A (en) * 1982-03-15 1984-04-03 The Procter & Gamble Company Wet-microcontracted paper and concomitant process
US4585539A (en) * 1982-08-17 1986-04-29 Technic, Inc. Electrolytic reactor
US4500394A (en) * 1984-05-16 1985-02-19 At&T Technologies, Inc. Contacting a surface for plating thereon
US4634503A (en) * 1984-06-27 1987-01-06 Daniel Nogavich Immersion electroplating system
US4639028A (en) * 1984-11-13 1987-01-27 Economic Development Corporation High temperature and acid resistant wafer pick up device
US4576685A (en) * 1985-04-23 1986-03-18 Schering Ag Process and apparatus for plating onto articles
US4648944A (en) * 1985-07-18 1987-03-10 Martin Marietta Corporation Apparatus and method for controlling plating induced stress in electroforming and electroplating processes
US4800818A (en) * 1985-11-02 1989-01-31 Hitachi Kiden Kogyo Kabushiki Kaisha Linear motor-driven conveyor means
US4898647A (en) * 1985-12-24 1990-02-06 Gould, Inc. Process and apparatus for electroplating copper foil
US4906341A (en) * 1987-09-24 1990-03-06 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor device and apparatus therefor
US5083364A (en) * 1987-10-20 1992-01-28 Convac Gmbh System for manufacturing semiconductor substrates
US4902398A (en) * 1988-04-27 1990-02-20 American Thim Film Laboratories, Inc. Computer program for vacuum coating systems
US4988533A (en) * 1988-05-27 1991-01-29 Texas Instruments Incorporated Method for deposition of silicon oxide on a wafer
US5183377A (en) * 1988-05-31 1993-02-02 Mannesmann Ag Guiding a robot in an array
US5377708A (en) * 1989-03-27 1995-01-03 Semitool, Inc. Multi-station semiconductor processor with volatilization
US4913035A (en) * 1989-08-16 1990-04-03 Duh Gabri C B Apparatus for mist prevention in car windshields
US5180273A (en) * 1989-10-09 1993-01-19 Kabushiki Kaisha Toshiba Apparatus for transferring semiconductor wafers
US5000827A (en) * 1990-01-02 1991-03-19 Motorola, Inc. Method and apparatus for adjusting plating solution flow characteristics at substrate cathode periphery to minimize edge effect
US5186594A (en) * 1990-04-19 1993-02-16 Applied Materials, Inc. Dual cassette load lock
US5500081A (en) * 1990-05-15 1996-03-19 Bergman; Eric J. Dynamic semiconductor wafer processing using homogeneous chemical vapors
US5178639A (en) * 1990-06-28 1993-01-12 Tokyo Electron Sagami Limited Vertical heat-treating apparatus
US5723028A (en) * 1990-08-01 1998-03-03 Poris; Jaime Electrodeposition apparatus with virtual anode
US5078852A (en) * 1990-10-12 1992-01-07 Microelectronics And Computer Technology Corporation Plating rack
US5096550A (en) * 1990-10-15 1992-03-17 The United States Of America As Represented By The United States Department Of Energy Method and apparatus for spatially uniform electropolishing and electrolytic etching
US5302464A (en) * 1991-03-04 1994-04-12 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Method of plating a bonded magnet and a bonded magnet carrying a metal coating
US5306895A (en) * 1991-03-26 1994-04-26 Ngk Insulators, Ltd. Corrosion-resistant member for chemical apparatus using halogen series corrosive gas
US5178512A (en) * 1991-04-01 1993-01-12 Equipe Technologies Precision robot apparatus
US5597836A (en) * 1991-09-03 1997-01-28 Dowelanco N-(4-pyridyl) (substituted phenyl) acetamide pesticides
US5301700A (en) * 1992-03-05 1994-04-12 Tokyo Electron Limited Washing system
US5501768A (en) * 1992-04-17 1996-03-26 Kimberly-Clark Corporation Method of treating papermaking fibers for making tissue
US5388945A (en) * 1992-08-04 1995-02-14 International Business Machines Corporation Fully automated and computerized conveyor based manufacturing line architectures adapted to pressurized sealable transportable containers
US5489341A (en) * 1993-08-23 1996-02-06 Semitool, Inc. Semiconductor processing with non-jetting fluid stream discharge array
US5391517A (en) * 1993-09-13 1995-02-21 Motorola Inc. Process for forming copper interconnect structure
US5508095A (en) * 1993-11-16 1996-04-16 Scapa Group Plc Papermachine clothing
US5391285A (en) * 1994-02-25 1995-02-21 Motorola, Inc. Adjustable plating cell for uniform bump plating of semiconductor wafers
US5609239A (en) * 1994-03-21 1997-03-11 Thyssen Aufzuege Gmbh Locking system
US5600532A (en) * 1994-04-11 1997-02-04 Ngk Spark Plug Co., Ltd. Thin-film condenser
US5405518A (en) * 1994-04-26 1995-04-11 Industrial Technology Research Institute Workpiece holder apparatus
US6184068B1 (en) * 1994-06-02 2001-02-06 Semiconductor Energy Laboratory Co., Ltd. Process for fabricating semiconductor device
US5512319A (en) * 1994-08-22 1996-04-30 Basf Corporation Polyurethane foam composite
US5711646A (en) * 1994-10-07 1998-01-27 Tokyo Electron Limited Substrate transfer apparatus
US5593545A (en) * 1995-02-06 1997-01-14 Kimberly-Clark Corporation Method for making uncreped throughdried tissue products without an open draw
US5871626A (en) * 1995-09-27 1999-02-16 Intel Corporation Flexible continuous cathode contact circuit for electrolytic plating of C4, TAB microbumps, and ultra large scale interconnects
US6028986A (en) * 1995-11-10 2000-02-22 Samsung Electronics Co., Ltd. Methods of designing and fabricating intergrated circuits which take into account capacitive loading by the intergrated circuit potting material
US5597460A (en) * 1995-11-13 1997-01-28 Reynolds Tech Fabricators, Inc. Plating cell having laminar flow sparger
US5620581A (en) * 1995-11-29 1997-04-15 Aiwa Research And Development, Inc. Apparatus for electroplating metal films including a cathode ring, insulator ring and thief ring
US5744019A (en) * 1995-11-29 1998-04-28 Aiwa Research And Development, Inc. Method for electroplating metal films including use a cathode ring insulator ring and thief ring
US5892207A (en) * 1995-12-01 1999-04-06 Teisan Kabushiki Kaisha Heating and cooling apparatus for reaction chamber
US6709562B1 (en) * 1995-12-29 2004-03-23 International Business Machines Corporation Method of making electroplated interconnection structures on integrated circuit chips
US5871805A (en) * 1996-04-08 1999-02-16 Lemelson; Jerome Computer controlled vapor deposition processes
US6051284A (en) * 1996-05-08 2000-04-18 Applied Materials, Inc. Chamber monitoring and adjustment by plasma RF metrology
US5731678A (en) * 1996-07-15 1998-03-24 Semitool, Inc. Processing head for semiconductor processing machines
US6672820B1 (en) * 1996-07-15 2004-01-06 Semitool, Inc. Semiconductor processing apparatus having linear conveyer system
US6199301B1 (en) * 1997-01-22 2001-03-13 Industrial Automation Services Pty. Ltd. Coating thickness control
US6174425B1 (en) * 1997-05-14 2001-01-16 Motorola, Inc. Process for depositing a layer of material over a substrate
US6221230B1 (en) * 1997-05-15 2001-04-24 Hiromitsu Takeuchi Plating method and apparatus
US6053687A (en) * 1997-09-05 2000-04-25 Applied Materials, Inc. Cost effective modular-linear wafer processing
US5882498A (en) * 1997-10-16 1999-03-16 Advanced Micro Devices, Inc. Method for reducing oxidation of electroplating chamber contacts and improving uniform electroplating of a substrate
US6179983B1 (en) * 1997-11-13 2001-01-30 Novellus Systems, Inc. Method and apparatus for treating surface including virtual anode
US6193859B1 (en) * 1997-11-13 2001-02-27 Novellus Systems, Inc. Electric potential shaping apparatus for holding a semiconductor wafer during electroplating
US6027631A (en) * 1997-11-13 2000-02-22 Novellus Systems, Inc. Electroplating system with shields for varying thickness profile of deposited layer
US20020046952A1 (en) * 1998-01-06 2002-04-25 Graham Lyndon W. Electroplating system having auxiliary electrode exterior to main reactor chamber for contact cleaning operations
US6174796B1 (en) * 1998-01-30 2001-01-16 Fujitsu Limited Semiconductor device manufacturing method
US20020008036A1 (en) * 1998-02-12 2002-01-24 Hui Wang Plating apparatus and method
US20040031693A1 (en) * 1998-03-20 2004-02-19 Chen Linlin Apparatus and method for electrochemically depositing metal on a semiconductor workpiece
US6699373B2 (en) * 1998-07-10 2004-03-02 Semitool, Inc. Apparatus for processing the surface of a microelectronic workpiece
US20030062258A1 (en) * 1998-07-10 2003-04-03 Woodruff Daniel J. Electroplating apparatus with segmented anode array
US6017820A (en) * 1998-07-17 2000-01-25 Cutek Research, Inc. Integrated vacuum and plating cluster system
US6218097B1 (en) * 1998-09-03 2001-04-17 Agfa-Gevaert Color photographic silver halide material
US20020032499A1 (en) * 1999-04-13 2002-03-14 Wilson Gregory J. Tuning electrodes used in a reactor for electrochemically processing a microelectronic workpiece
US20020008037A1 (en) * 1999-04-13 2002-01-24 Wilson Gregory J. System for electrochemically processing a workpiece
US20040055877A1 (en) * 1999-04-13 2004-03-25 Wilson Gregory J. Workpiece processor having processing chamber with improved processing fluid flow
US6365729B1 (en) * 1999-05-24 2002-04-02 The Public Health Research Institute Of The City Of New York, Inc. High specificity primers, amplification methods and kits
US6342137B1 (en) * 1999-07-12 2002-01-29 Semitool, Inc. Lift and rotate assembly for use in a workpiece processing station and a method of attaching the same
US6168695B1 (en) * 1999-07-12 2001-01-02 Daniel J. Woodruff Lift and rotate assembly for use in a workpiece processing station and a method of attaching the same
US20030038035A1 (en) * 2001-05-30 2003-02-27 Wilson Gregory J. Methods and systems for controlling current in electrochemical processing of microelectronic workpieces
US20030070918A1 (en) * 2001-08-31 2003-04-17 Hanson Kyle M. Apparatus and methods for electrochemical processing of microelectronic workpieces
US6678055B2 (en) * 2001-11-26 2004-01-13 Tevet Process Control Technologies Ltd. Method and apparatus for measuring stress in semiconductor wafers

Also Published As

Publication number Publication date Type
US20030062258A1 (en) 2003-04-03 application
US20030102210A1 (en) 2003-06-05 application
US6497801B1 (en) 2002-12-24 grant
US20050109611A1 (en) 2005-05-26 application
US20050161336A1 (en) 2005-07-28 application
US20050161320A1 (en) 2005-07-28 application
US7147760B2 (en) 2006-12-12 grant
US7357850B2 (en) 2008-04-15 grant

Similar Documents

Publication Publication Date Title
US5441629A (en) Apparatus and method of electroplating
US6261433B1 (en) Electro-chemical deposition system and method of electroplating on substrates
US4367123A (en) Precision spot plating process and apparatus
US6398926B1 (en) Electroplating apparatus and method of using the same
US6432831B2 (en) Gas distribution apparatus for semiconductor processing
US6132587A (en) Uniform electroplating of wafers
US4304641A (en) Rotary electroplating cell with controlled current distribution
US6379511B1 (en) Paddle design for plating bath
US6270647B1 (en) Electroplating system having auxiliary electrode exterior to main reactor chamber for contact cleaning operations
US6478936B1 (en) Anode assembly for plating and planarizing a conductive layer
US6942780B2 (en) Method and apparatus for processing a substrate with minimal edge exclusion
US4624749A (en) Electrodeposition of submicrometer metallic interconnect for integrated circuits
US5893966A (en) Method and apparatus for continuous processing of semiconductor wafers
US6572755B2 (en) Method and apparatus for electrochemically depositing a material onto a workpiece surface
US20040016636A1 (en) Electrochemical processing cell
US20010052465A1 (en) Flow diffuser to be used in electro-chemical plating system
US6027631A (en) Electroplating system with shields for varying thickness profile of deposited layer
US5135636A (en) Electroplating method
US6074544A (en) Method of electroplating semiconductor wafer using variable currents and mass transfer to obtain uniform plated layer
US3536594A (en) Method and apparatus for rapid gold plating integrated circuit slices
US5312532A (en) Multi-compartment eletroplating system
US5078852A (en) Plating rack
US6773571B1 (en) Method and apparatus for uniform electroplating of thin metal seeded wafers using multiple segmented virtual anode sources
US6280581B1 (en) Method and apparatus for electroplating films on semiconductor wafers
US20050087439A1 (en) Chambers, systems, and methods for electrochemically processing microfeature workpieces