JP2001064795A - Cup-shaped plating device - Google Patents
Cup-shaped plating deviceInfo
- Publication number
- JP2001064795A JP2001064795A JP23786899A JP23786899A JP2001064795A JP 2001064795 A JP2001064795 A JP 2001064795A JP 23786899 A JP23786899 A JP 23786899A JP 23786899 A JP23786899 A JP 23786899A JP 2001064795 A JP2001064795 A JP 2001064795A
- Authority
- JP
- Japan
- Prior art keywords
- plating
- solution
- wafer
- plating solution
- cup
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000007747 plating Methods 0.000 title claims abstract description 178
- 238000003756 stirring Methods 0.000 claims abstract description 16
- 239000007788 liquid Substances 0.000 claims description 21
- 230000001174 ascending effect Effects 0.000 claims description 6
- 230000007246 mechanism Effects 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 abstract description 2
- 230000000630 rising effect Effects 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 36
- 238000000034 method Methods 0.000 description 14
- 230000008569 process Effects 0.000 description 12
- 230000002093 peripheral effect Effects 0.000 description 10
- 238000002955 isolation Methods 0.000 description 8
- 238000005192 partition Methods 0.000 description 5
- 230000007480 spreading Effects 0.000 description 4
- 238000003892 spreading Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 238000007599 discharging Methods 0.000 description 2
- 235000012489 doughnuts Nutrition 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は半導体用のウェーハ
にめっきを施すカップ式めっき装置に関するものであ
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cup-type plating apparatus for plating a semiconductor wafer.
【０００２】[0002]
【従来の技術】従来より、半導体用のウェーハにめっき
を施す装置として、カップ式めっき装置が知られてい
る。このカップ式めっき装置は、めっき槽の上部開口に
沿って設けられたウェーハ支持部と、このウェーハ支持
部の下側位置に設けられためっき槽の内部から外部に貫
通する液流出路と、めっき槽底部に設けられた液供給管
とを備え、液供給管から上昇流で供給されるめっき液に
液流出路からめっき槽の外部へ流出する流れを形成さ
せ、このめっき液に支持部に載置されたウェーハのめっ
き対象面を接触させることで、めっき処理を行うように
なっている。2. Description of the Related Art Conventionally, a cup-type plating apparatus has been known as an apparatus for plating a semiconductor wafer. The cup-type plating apparatus includes a wafer support provided along an upper opening of a plating tank, a liquid outflow passage penetrating from the inside of a plating tank provided at a lower position of the wafer support to the outside, And a liquid supply pipe provided at the bottom of the tank. The plating liquid supplied from the liquid supply pipe in ascending flow forms a flow flowing out of the plating tank from the liquid outflow path, and the plating liquid is placed on the support. The plating process is performed by contacting the plating target surface of the placed wafer.
【０００３】このカップ式めっき装置は、めっき液をめ
っき対象面に向けて上昇流で供給する結果、めっき対象
面には、その中央付近から周辺方向に広がるような流動
状態でめっき液が接触することとなり、めっき対象面全
面に均一なめっき処理が行えるという特長を有するもの
である。そして、ウェーハ支持部へ載置するウェーハを
順次取り替えてめっき処理を行うことができるので、小
ロット生産やめっき処理の自動化に好適なものとして広
く利用されている。In this cup-type plating apparatus, the plating solution is supplied in an ascending flow toward the surface to be plated. As a result, the plating solution comes into contact with the surface to be plated in a fluid state such that the plating solution spreads from near the center to the peripheral direction. As a result, it is possible to perform a uniform plating process on the entire surface to be plated. Since the plating process can be performed by sequentially replacing the wafers placed on the wafer support portion, it is widely used as suitable for small-lot production and automation of the plating process.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、このカ
ップ式めっき装置では、ウェーハ支持部の下側位置に設
けられている液流出路とウェーハ支持部に載置されたウ
ェーハのめっき対象面との間に、僅かな段差が生じて角
部を形成するため、その角部にめっき液の流動が滞留
し、その影響により、めっき対象面の周辺部分における
めっき処理が不均一になるという現象がある。このこと
は、ウェーハの使用可能面積を制限するので、歩留まり
的に好ましくなく、よりウェーハの使用面積を大きくで
きるような技術が求められている。However, in this cup-type plating apparatus, the liquid flow path provided at a lower position of the wafer support and the surface to be plated of the wafer placed on the wafer support are provided. In addition, since a slight step is formed to form a corner, the flow of the plating solution stays at the corner, and the effect of this causes a phenomenon that the plating process in the peripheral portion of the plating target surface becomes uneven. Since this limits the usable area of the wafer, it is not preferable in terms of yield, and there is a need for a technique that can increase the use area of the wafer.
【０００５】また、昨今の微細配線加工技術の発達に伴
い、ウェーハ表面に施される回路パターンも、非常に微
細なものが加工されるようになっており、そのような微
細配線加工がなされたウェーハ表面をめっき対象面にし
ても、より均一なめっき処理を行える技術が要求されて
きている。Further, with the recent development of fine wiring processing technology, very fine circuit patterns formed on the wafer surface have been processed, and such fine wiring processing has been performed. There is a demand for a technique capable of performing a more uniform plating process even when the wafer surface is used as a plating target surface.
【０００６】これらの要求に対して、従来のカップ式め
っき装置では、めっき対象面におけるめっき液の流動状
態が、その中央付近から周辺方向に広がるような流れを
定常的に形成するため、微細配線が施されたものに対し
て、めっき対象面全面で、より均一なめっき処理を行う
には、今ひとつ満足できるものではなかった。また、ウ
ェーハのめっき対象面周辺にまで亘り、より広い面積で
均一なめっき処理を施すにも限界があった。In response to these requirements, the conventional cup-type plating apparatus steadily forms a flow in which the flow state of the plating solution on the surface to be plated spreads from the vicinity of the center to the peripheral direction. However, in order to perform a more uniform plating process on the entire surface to be plated with respect to the surface to which plating has been applied, it has not been satisfactory. In addition, there is a limit in performing a uniform plating process over a larger area over the periphery of the plating target surface of the wafer.
【０００７】そこで、本発明は、従来のカップ式めっき
装置におけるめっき液の流動状態により生じていた、め
っき対象面周辺における不均一なめっき処理を改善する
ととものに、めっき対象面全面で、より均一なめっき処
理が可能となるカップ式めっき装置を提供せんとするも
のである。Accordingly, the present invention improves the uneven plating process around the plating target surface caused by the flowing state of the plating solution in the conventional cup-type plating apparatus, and further improves the entire plating target surface. It is an object of the present invention to provide a cup-type plating apparatus capable of performing uniform plating.
【０００８】[0008]
【課題を解決するための手段】このような目的のために
本発明では、めっき槽の上部開口に沿って設けられたウ
ェーハ支持部と、このウェーハ支持部の下側位置に設け
られためっき槽の内部から外部に貫通する液流出路と、
めっき槽中央底部に設けられた液供給管とを備え、液供
給管から上昇流で供給されるめっき液に液流出路からめ
っき槽の外部へ流出する流れを形成させ、このめっき液
に支持部に載置されたウェーハのめっき対象面を接触さ
せることで、めっき処理を行うようになっているカップ
式めっき装置において、載置されたウェーハのめっき対
象面の下方に、上昇流で供給されるめっき液を強制的に
撹拌できる撹拌手段を設けるものとした。According to the present invention, a wafer support provided along an upper opening of a plating tank and a plating tank provided at a lower position of the wafer support are provided. A liquid outflow passage penetrating from the inside to the outside of the
A liquid supply pipe provided at a central bottom portion of the plating tank, wherein the plating liquid supplied by the ascending flow from the liquid supply pipe forms a flow flowing out of the plating tank from the liquid outflow passage, and the plating solution In a cup-type plating apparatus adapted to perform a plating process by contacting a plating target surface of a wafer mounted on the wafer, the wafer is supplied in an upward flow below the plating target surface of the mounted wafer. A stirring means capable of forcibly stirring the plating solution was provided.
【０００９】従来のカップ式めっき装置では、上昇流で
供給されためっき液が、めっき対象面の中央付近から周
辺方向に広がる流動状態を定常的に形成するため、めっ
き液中のめっき金属イオンは、めっき対象面の周辺部と
中心付近とで、その供給量の差異が生じやすくなり、特
に電流密度を高くすると中心付近と周辺方向でのめっき
性状が、不均一なものとなる傾向がある。ところが、本
発明のカップ式めっき装置によれば、液供給管より供給
されるめっき液の上昇流は、撹拌手段により、その流動
方向を変えられるため、めっき対象面全面から見ると、
比較的ランダムな流動状態となって接触する。従って、
めっき対象面の全面に、めっき金属イオンが均一的に供
給されることになり、非常に均一性の高いめっき処理が
実現できる。また、めっき液は比較的ランダムな流動状
態を形成して、めっき対象面に接触することなるので、
めっき液の流動状態によって生じやすい、液流れ状の不
均一なめっき外観も生じなくなる。In the conventional cup-type plating apparatus, the plating solution supplied by the upward flow constantly forms a fluid state that spreads from the vicinity of the center of the surface to be plated to the peripheral direction. In addition, the difference in the supply amount is likely to occur between the peripheral portion and the vicinity of the center of the plating target surface, and particularly when the current density is increased, the plating properties in the vicinity of the center and in the peripheral direction tend to be non-uniform. However, according to the cup-type plating apparatus of the present invention, the rising flow of the plating solution supplied from the solution supply pipe can be changed in flow direction by the stirring means, so that when viewed from the entire surface to be plated,
It comes into contact in a relatively random flow state. Therefore,
The plating metal ions are uniformly supplied to the entire surface of the plating target surface, and a highly uniform plating process can be realized. Also, since the plating solution forms a relatively random flow state and comes into contact with the surface to be plated,
A non-uniform plating appearance in the form of a liquid flow, which tends to occur depending on the flow state of the plating solution, is also eliminated.
【００１０】本発明における撹拌手段は、上昇流で供給
されるめっき液を撹拌できるものであれば、どのような
ものでもよい。例えば、複数のインペラを有した撹拌翼
をめっき対象面の下方位置に配置して回転させるように
したり、液供給管から供給されるめっき液の上昇流を、
妨げるように、めっき液を噴射するようなポンプ機構な
どを別途設けて行うことも可能である。要するに、供給
されるめっき液の上昇流によって生じる、めっき対象面
でのめっき液流動状態を変更できるような手段であれ
ば、いずれを選択してもよいものである。The stirring means in the present invention may be any means as long as it can stir the plating solution supplied in the upward flow. For example, a stirring blade having a plurality of impellers may be arranged at a position below the surface to be plated and rotated, or an ascending flow of a plating solution supplied from a solution supply pipe may be used.
It is also possible to separately provide a pump mechanism or the like for injecting the plating solution so as to hinder the operation. In short, any means can be selected as long as it can change the flowing state of the plating solution on the surface to be plated, which is caused by the upward flow of the supplied plating solution.
【００１１】本発明のカップ式めっき装置では、撹拌手
段は、めっき対象面の周辺下方付近におけるめっき液流
動を強制的に変更させるための攪拌翼が設けられたドー
ナツ形状の円板と、該円板をめっき対象面と平行に支持
するとともに、液供給管から供給されるめっき液の上昇
流に対して垂直に回転させることができる駆動機構とか
らなるものとすることが好ましい。In the cup-type plating apparatus of the present invention, the stirring means comprises a donut-shaped disk provided with stirring blades for forcibly changing the flow of the plating solution near the periphery of the surface to be plated, and the circular plate. It is preferable that the plate is configured to have a drive mechanism that supports the plate in parallel with the surface to be plated and that can rotate vertically with respect to the upward flow of the plating solution supplied from the solution supply pipe.
【００１２】このようにすると、上昇流で供給されため
っき液は、ドーナツ形状の円板における開口を通過し
て、めっき対象面にある程度到達することができ、そし
て、めっき対象面の周辺方向に広がるようなめっき液の
流動状態は、撹拌翼により変更されることになる。従っ
て、ウェーハ支持部の下側位置に設けられている液流出
路とウェーハ支持部に載置されたウェーハのめっき対象
面との間での僅かな段差におけるめっき液の流動が滞留
する現象は、解消されることになり、めっき対象面の周
辺部分においても均一なめっき処理が施せるものとな
る。In this way, the plating solution supplied in the upward flow can pass through the opening in the donut-shaped disk, reach the plating target surface to some extent, and move in the peripheral direction of the plating target surface. The spreading state of the plating solution is changed by the stirring blade. Therefore, the phenomenon that the flow of the plating solution at a slight step between the solution outflow path provided at the lower position of the wafer support and the plating target surface of the wafer placed on the wafer support is retained, As a result, uniform plating can be performed even in the peripheral portion of the plating target surface.
【００１３】この場合における撹拌翼は、めっき対象面
の周辺下方付近におけるめっき液流動を強制的に変更で
きるような形状であれば、どのようなものでもよい。め
っき対象面におけるめっき液の流動状態を効率的に変更
するには、この撹拌翼はめっき対象面の近傍に位置する
よう配置することが、より好ましいものである。また、
ドーナツ形状の円板における開口は、めっき液の液供給
管の位置や大きさに合わせて、適宜、その形状、開口面
積等を決定すればよく、上昇流で供給されるめっき液が
めっき対象面にある程度到達できるようにされていれば
よいものである。The stirring blade in this case may be of any shape so long as it can forcefully change the flow of the plating solution in the vicinity of the periphery of the surface to be plated. In order to efficiently change the flow state of the plating solution on the plating target surface, it is more preferable that the stirring blade is disposed near the plating target surface. Also,
The shape of the opening of the donut-shaped disk may be appropriately determined according to the position and size of the plating solution supply pipe. It is only necessary to be able to reach to some extent.
【００１４】[0014]
【発明の実施の形態】以下、本発明に係るカップ式めっ
き装置の好ましい一実施形態について説明する。図１は
本実施形態におけるカップ式めっき装置のめっき槽断面
概略を表したものである。図１で示すように、本実施形
態におけるカップ式めっき装置は、めっき槽１の上部開
口に沿ってウェーハ支持部２が設けられており、このウ
ェーハ支持部２にウェーハ３を載置して、ウェーハ３の
めっき対象面４に対してめっき処理が行われるものであ
る。このウェーハ支持部２は、図示を省略するカソード
とその下にあるめっき液漏洩防止用のシールパッキン５
とにより構成されている。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A preferred embodiment of the cup-type plating apparatus according to the present invention will be described below. FIG. 1 schematically illustrates a cross section of a plating tank of a cup-type plating apparatus according to the present embodiment. As shown in FIG. 1, in the cup-type plating apparatus according to the present embodiment, a wafer support 2 is provided along an upper opening of a plating tank 1, and a wafer 3 is placed on the wafer support 2. The plating process is performed on the plating target surface 4 of the wafer 3. The wafer support portion 2 includes a cathode (not shown) and a seal packing 5 thereunder for preventing plating solution leakage.
It is composed of
【００１５】また、めっき槽１の底部中央には、主めっ
き液供給管６が設けられており、ウェーハ支持部２の下
側位置には、めっき対象面４の中心付近に到達するめっ
き液がウェーハ２の外周に向かう方向に広がる流れを形
成するように外部に溢出させるための主めっき液流出路
７が設けられている。A main plating solution supply pipe 6 is provided at the center of the bottom of the plating tank 1, and a plating solution reaching the center of the plating target surface 4 is provided below the wafer support 2. A main plating solution outflow path 7 is provided for overflowing to the outside so as to form a flow spreading in a direction toward the outer periphery of the wafer 2.
【００１６】そして、めっき槽１内には隔壁８が配置さ
れている。この隔壁８は、めっき槽１の横断面形状に一
致する円盤状に形成され、主めっき液供給管６に差し込
まれた状態でめっき槽１内に固定している。そして、こ
の隔壁８には、多数の開口９、９、９・・を穿設してお
り、各開口９、９、９・・・には、各開口９を覆うよう
に隔膜１０を配している。ここで各開口９は、主めっき
液供給管６を中心とした同心円上に等間隔に配置されて
いる。この隔膜１０は、めっき液に対して耐薬品性を有
し、絶縁性の材料で形成された多孔性の膜であり、めっ
き液中のイオンを介してアノードとウェーハ３との電導
が行える特性を有したものである。A partition 8 is arranged in the plating tank 1. The partition wall 8 is formed in a disk shape corresponding to the cross-sectional shape of the plating tank 1, and is fixed in the plating tank 1 while being inserted into the main plating solution supply pipe 6. A large number of openings 9, 9, 9,... Are formed in the partition 8, and a diaphragm 10 is arranged in each of the openings 9, 9, 9,. ing. Here, the openings 9 are arranged at equal intervals on a concentric circle centered on the main plating solution supply pipe 6. The diaphragm 10 has a chemical resistance to the plating solution and is a porous film formed of an insulating material, and has a characteristic that electrical conduction between the anode and the wafer 3 can be performed through ions in the plating solution. It has.
【００１７】そして、隔壁８下方には、主めっき液供給
管６の周囲に配置できるように、円盤状に形成されたア
ノード１１が設けられている。めっき槽１内は、隔壁８
によって、上方にウェーハ側隔離室１２を、下方にアノ
ード側隔離室１３を形成している。このアノード側隔離
室１３には、めっき槽１底側より、主めっき液供給管６
とは別にめっき液を供給するための補助めっき液供給管
１４が設けられ、アノード側隔離室１３の外側に、アノ
ード側隔離室１３に供給されためっき液を排出する補助
めっき液貯留室１５が設けられている。そして、補助め
っき液貯留室１５には、補助めっき液を排出する補助め
っき液排出管１６が設けられている。An anode 11 formed in a disk shape is provided below the partition 8 so as to be disposed around the main plating solution supply pipe 6. Inside the plating tank 1 is a partition 8
Thus, a wafer-side isolation chamber 12 is formed above and an anode-side isolation chamber 13 is formed below. In the anode side isolation chamber 13, a main plating solution supply pipe 6 is provided from the bottom side of the plating tank 1.
An auxiliary plating solution supply pipe 14 for supplying a plating solution is provided separately, and an auxiliary plating solution storage chamber 15 for discharging the plating solution supplied to the anode side isolation chamber 13 is provided outside the anode side isolation chamber 13. Is provided. The auxiliary plating solution storage chamber 15 is provided with an auxiliary plating solution discharge pipe 16 for discharging the auxiliary plating solution.
【００１８】ウェーハ側隔離室１２には、めっき対象面
４の下方位置へ、複数のインペラ１７が立設されたドー
ナツ形円板１８が配置されている。このインペラ１７
は、その上端がめっき対象面４に近接する位置になるよ
う配置されている。このドーナツ形円板１８は、平面図
で見ると、図２に示すようになっており、中央に開口１
９が設けられ、インペラ１７が放射状に配置されている
ものである。また、ドーナツ形円板１８の外周側には歯
車部２０が形成されている。そして、このドーナツ形円
板１８は、主めっき液流出路７の下側位置で、めっき対
象面４と平行になるように、複数のプーリー２１と歯車
部２０とが咬合することにより支持されている。プーリ
ー２１の一つは、駆動シャフト２２に連動するようにさ
れたベベルギア２３と接続されている。A donut-shaped disk 18 having a plurality of impellers 17 erected thereon is disposed below the plating target surface 4 in the wafer-side isolation chamber 12. This impeller 17
Are arranged such that the upper end thereof is in a position close to the plating target surface 4. The donut-shaped disk 18 has a configuration as shown in FIG.
9 are provided, and the impellers 17 are radially arranged. A gear 20 is formed on the outer peripheral side of the donut-shaped disk 18. The donut-shaped disk 18 is supported by the plurality of pulleys 21 and the gear portion 20 engaging with each other at a position below the main plating solution outflow passage 7 so as to be parallel to the plating target surface 4. I have. One of the pulleys 21 is connected to a bevel gear 23 that is linked to a drive shaft 22.
【００１９】主めっき液供給管６より上昇流で供給され
ためっき液は、ドーナツ形円板１８の開口１９を通過し
てめっき対象面４に到達し、めっき対象面４の外周に向
かう方向に広がるようなめっき液の流動状態を形成す
る。この際、駆動シャフト２２によりベベルギア２３を
介してプーリー２１を回転させることにより、ドーナツ
形円板１８が、めっき液の上昇流に対して垂直に回転す
ることになる。そして、このドーナツ形円板１８のイン
ペラ１７により、めっき対象面４における外周に向かう
方向に広がるめっき液の流動状態は変更されることにな
る。特に、主めっき液流出路７とめっき対象面４とので
形成される角部２４では、めっき液流動の淀みが生じや
すいものであるが、このインペラ１７の撹拌により、角
部２４にもめっき液が十分に流動することになる。The plating solution supplied by the ascending flow from the main plating solution supply pipe 6 passes through the opening 19 of the donut-shaped disk 18, reaches the plating target surface 4, and moves in a direction toward the outer periphery of the plating target surface 4. A spreading state of the plating solution is formed so as to spread. At this time, when the pulley 21 is rotated by the drive shaft 22 via the bevel gear 23, the donut-shaped disk 18 rotates perpendicularly to the upward flow of the plating solution. The flow state of the plating solution spreading in the direction toward the outer periphery of the plating target surface 4 is changed by the impeller 17 of the donut-shaped disk 18. In particular, at the corners 24 formed between the main plating solution outflow path 7 and the plating target surface 4, stagnation of the flow of the plating solution is likely to occur. Will flow sufficiently.
【００２０】本実施形態で示したカップ式めっき装置を
用いて、ウェーハにめっき処理を行った結果、めっき対
象面の中心付近と周辺部とのめっき性状の相違も生じ
ず、均一なめっき処理が行えた。また、めっき液の定常
的な流動状態によって生じやすい、液流れ状の不均一な
めっき外観も確認されなかった。As a result of plating the wafer using the cup-type plating apparatus described in the present embodiment, there is no difference in plating properties between the vicinity of the center of the surface to be plated and the peripheral portion, and uniform plating is achieved. I did it. In addition, a non-uniform plating appearance in the form of a liquid flow, which tends to occur due to a steady flow state of the plating solution, was not confirmed.
【００２１】[0021]
【発明の効果】本発明のカップ式めっき装置によれば、
めっき対象面全面で、より均一なめっき処理が可能とな
り、めっき対象面周辺部分で生じ易い不均一なめっき処
理を解消することが可能となる。According to the cup type plating apparatus of the present invention,
More uniform plating can be performed on the entire surface to be plated, and uneven plating that is likely to occur around the surface to be plated can be eliminated.
【図面の簡単な説明】[Brief description of the drawings]
【図１】本実施形態におけるカップ式めっき装置のめっ
き槽断面図。FIG. 1 is a sectional view of a plating tank of a cup-type plating apparatus according to an embodiment.
【図２】ドーナツ形円板の平面図。FIG. 2 is a plan view of a donut disk.
１ めっき槽 ２ ウェーハ支持部 ３ ウェーハ ４ めっき対象面 ５ シールパッキン ６ 主めっき液供給管 ７ 主めっき液流出路 ８ 隔膜 ９ 開口 １０ 隔膜 １１ アノード １２ ウェーハ側隔離室 １３ アノード側隔離室 １４ 補助めっき液供給管 １５ 補助めっき液貯留室 １６ 補助めっき液排出管 １７ インペラ １８ ドーナツ形円板 １９ 開口 ２０ 歯車部 ２１ プーリー ２２ 駆動シャフト ２３ ベベルギア ２４ 角部 DESCRIPTION OF SYMBOLS 1 Plating tank 2 Wafer support part 3 Wafer 4 Plating object surface 5 Seal packing 6 Main plating solution supply pipe 7 Main plating solution outflow passage 8 Separator 9 Opening 10 Separator film 11 Anode 12 Wafer side isolation room 13 Anode side isolation room 14 Auxiliary plating solution Supply pipe 15 Auxiliary plating solution storage chamber 16 Auxiliary plating solution discharge pipe 17 Impeller 18 Donut disk 19 Opening 20 Gear part 21 Pulley 22 Drive shaft 23 Bevel gear 24 Corner
Claims (2)
ウェーハ支持部と、このウェーハ支持部の下側位置に設
けられためっき槽の内部から外部に貫通する液流出路
と、めっき槽底部に設けられた液供給管とを備え、 液供給管から上昇流で供給されるめっき液に液流出路か
らめっき槽の外部へ流出する流れを形成させ、このめっ
き液に支持部に載置されたウェーハのめっき対象面を接
触させることで、めっき処理を行うようになっているカ
ップ式めっき装置において、 載置されたウェーハのめっき対象面の下方に、めっき槽
内へ供給されるめっき液を強制的に撹拌する撹拌手段が
設けられたことを特徴とするカップ式めっき装置。1. A wafer support provided along an upper opening of a plating tank, a liquid outflow passage penetrating from inside to outside of a plating tank provided at a lower position of the wafer support, and a bottom of the plating tank. A liquid supply pipe provided in the liquid supply pipe to form a flow flowing out of the plating tank from a liquid outflow path to the plating liquid supplied in an ascending flow from the liquid supply pipe, and the plating liquid is placed on a support portion. The plating solution supplied to the plating tank is placed below the plating target surface of the placed wafer in a cup-type plating apparatus that performs plating by bringing the plating target surface of the wafer into contact. A stirrer for forcibly stirring a cup-type plating apparatus.
近におけるめっき液流動を強制的に変更させるための攪
拌翼が設けられたドーナツ形状の円板と、 該円板をめっき対象面と平行に支持するとともに、液供
給管から供給されるめっき液の上昇流に対して垂直に回
転させることができる駆動機構とからなる請求項１に記
載のカップ式めっき装置。2. A stirring means includes: a donut-shaped disk provided with stirring blades for forcibly changing the flow of a plating solution near a periphery of a surface to be plated; 2. A cup-type plating apparatus according to claim 1, further comprising: a drive mechanism that supports the plating solution and rotates the plating solution vertically with respect to the upward flow of the plating solution supplied from the solution supply pipe.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23786899A JP3331332B2 (en) | 1999-08-25 | 1999-08-25 | Cup type plating equipment |
| US09/516,788 US6454918B1 (en) | 1999-03-23 | 2000-03-01 | Cup type plating apparatus |
| US09/779,526 US6482300B2 (en) | 1999-03-23 | 2001-02-09 | Cup shaped plating apparatus with a disc shaped stirring device having an opening in the center thereof |
| US10/087,845 US6991711B2 (en) | 1999-03-23 | 2002-03-05 | Cup type plating apparatus |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23786899A JP3331332B2 (en) | 1999-08-25 | 1999-08-25 | Cup type plating equipment |
| US09/779,526 US6482300B2 (en) | 1999-03-23 | 2001-02-09 | Cup shaped plating apparatus with a disc shaped stirring device having an opening in the center thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001064795A true JP2001064795A (en) | 2001-03-13 |
| JP3331332B2 JP3331332B2 (en) | 2002-10-07 |
Family
ID=26533409
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23786899A Expired - Fee Related JP3331332B2 (en) | 1999-03-23 | 1999-08-25 | Cup type plating equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3331332B2 (en) |
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| US6875333B2 (en) | 2002-02-14 | 2005-04-05 | Electroplating Engineers Of Japan Limited | Plating apparatus for wafer |
| US7294244B2 (en) | 2000-01-03 | 2007-11-13 | Semitool, Inc. | Microelectronic workpiece processing tool including a processing reactor having a paddle assembly for agitation of a processing fluid proximate to the workpiece |
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