CN102560587B - Electroplating device - Google Patents
Electroplating device Download PDFInfo
- Publication number
- CN102560587B CN102560587B CN201210027611.6A CN201210027611A CN102560587B CN 102560587 B CN102560587 B CN 102560587B CN 201210027611 A CN201210027611 A CN 201210027611A CN 102560587 B CN102560587 B CN 102560587B
- Authority
- CN
- China
- Prior art keywords
- anode
- semiconductor crystal
- crystal wafer
- electroplanting device
- bending
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Electroplating Methods And Accessories (AREA)
Abstract
The invention discloses an electroplating device. The electroplating device comprises a chemical electroplating groove, an anode, a substrate fixing device and a power supply device, wherein the chemical electroplating groove comprises an electroplating pond; the anode is arranged in the electroplating pond; the substrate fixing device is used for fixing a semiconductor wafer; the surface to be electroplated on the semiconductor wafer and the anode are arranged oppositely; the distance between the anode and the semiconductor wafer is sequentially increased towards an edge region along a middle region; the power supply device is used for providing a negative output and a positive output; the negative output is connected with the semiconductor wafer; and the positive output is connected with the anode. According to the electroplating device, uniform metal layers or films can be formed in a central region or a surrounding region of the semiconductor wafer, so that the electroplating quality is improved finally.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly relate to a kind of electroplanting device.
Background technology
In manufacture unicircuit (IC) semiconducter device, the even degree of substrate surface is quite crucial, and particularly the density of element increases and after size is contracted to time micron grade.General use metal level, as the line of Individual elements in IC, separates metal wire with dielectric layer or insulation layer, and between dielectric layer, forms the interconnection structures such as groove, contact hole, contact, to provide the circuit path of conducting metal interlayer.
In prior art, interconnection structure is to adopt copper or copper alloy for main raw, specifically can adopt metal level or the film of following method deposited copper or copper alloy: physical vapor deposition (PVD) method, chemical vapour deposition (CVD) method and electrochemical plating.Wherein, electrochemical plating can easily obtain highly purified metal level or film, and not only the formation speed of metal level or film is fast, but also can control the thickness of metal level or film with comparalive ease, and therefore electrochemical plating become main stream approach.General copper electroplating process is by wafer contacts electroplate liquid, and between positive and negative electrode, provides potential difference with metal refining to semiconductor substrate surface.
Electroplating technology needs to adopt electroplanting device to realize.According to the difference of electroplanting device structure, rectilinear electroplanting device and horizontal electroplanting device can be divided into.Be described for rectilinear electroplanting device below.
Fig. 1 is the structural representation of a rectilinear electroplanting device in prior art.Described rectilinear electroplanting device 100 comprises: turning axle 5 and the substrate fixture 4 be fixed on turning axle 5.In electroplating process, wafer 2 is fixed on substrate pedestal 3, and then is fixed on substrate fixture 4 by substrate pedestal 3, then immerses and comprises in the electrolytic plating pool 22 of electroplate liquid.The loop direction of whole electroplate liquid is as shown in arrow 13, and provide successional circulation electroplate liquid by pump 40, electroplate liquid upwards flows to wafer 2, then expands outwardly and flows transversely through wafer 2, as shown in arrow 14.The loop direction of electroplate liquid is from electrolytic plating pool 22 overflow to electroplate liquid storage tanks 20, as shown in arrow 10 and 11.Electroplate liquid flows back to pump 40, completes whole circulation step, as shown in arrow 12 after flowing out storage tanks 20 after flowing through filter (not shown).DC power supply (DC power supply) 50 provides negative pole to export and positive pole exports, and negative pole is wherein electrically connected to wafer 2, and positive pole is electrically connected to the anode 1 in electrolytic plating pool 22.In electroplating process, bias voltage is applied to wafer 2 by power supply unit 50, thus generation is negative volts lost relative to anode 1, makes flow of charge flow to wafer 2 from anode 1.
Fig. 2 is the electric force lines distribution relation schematic diagram between the anode of electroplanting device and negative electrode.In conjunction with reference to figure 2, semiconductor crystal wafer 2 is fixed on substrate fixture (not shown in Fig. 2) by substrate pedestal 3.Electrode contact ring 25 by multiple contact pin (contact pin) 25a and semiconductor crystal wafer 2 in electrical contact.When applying to be biased between anode 1 and semiconductor crystal wafer (i.e. negative electrode) 2, the volts lost between anode and negative electrode forms many power line Fc and Fe.Fc and Fe represents the power line in the middle section being in semiconductor crystal wafer (negative electrode) 2 and the power line in peripheral region respectively.Due to electrode contact ring 25 by multiple contact pin 25a and semiconductor crystal wafer 2 in electrical contact, cause volts lost sharply in the peripheral region of semiconductor crystal wafer 2 near contact pin 25a place, make the density of the power line Fe near contact pin 25a high more than the density of the power line Fc of semiconductor crystal wafer (negative electrode) 2 middle section.But, higher near contact pin 25a power line Fe density, just cause current density higher, and make the electrolytic coating deposit thickness of the peripheral region of semiconductor crystal wafer 2 thicker, and then cause in subsequent technique, bring out stripping and particle residue.Conductive layer thickness is on a semiconductor wafer uneven, also easily makes technique worsen further, and makes resistance bias higher.
Similarly, in other electroplanting devices of prior art, the middle section electrolytic coating deposit thickness that also there is semiconductor crystal wafer is thin, the defect that peripheral region electrolytic coating deposit thickness is thick.Especially when the size of semiconductor crystal wafer is greater than after 8 cun, above-mentioned defect is more obvious.
Therefore, how to ensure that the metal thickness homogeneity being deposited on semiconductor wafer surface in electroplating process just becomes those skilled in the art's problem demanding prompt solution.
Summary of the invention
The problem that the present invention solves is to provide a kind of electroplanting device, in the process of plating, can form uniform metal level or film at the middle section of semiconductor crystal wafer and peripheral region, the final quality improving plating.
For solving the problem, the invention provides a kind of electroplanting device, comprising:
Chemical plating groove, comprises electrolytic plating pool;
Anode, is arranged in described electrolytic plating pool;
Substrate fixture, for fixing semiconductor crystal wafer, described semiconductor crystal wafer electroplated face and described anode are oppositely arranged, and the distance between described anode and described semiconductor crystal wafer increases along region intermediate successively to fringe region;
Power supply unit, exports for providing negative pole and positive pole exports, and described negative pole exports and connects semiconductor crystal wafer, and described positive pole exports jointed anode.
Alternatively, described anode is inert anode.
Alternatively, described anode is reticulated structure.
Alternatively, the fringe region of described anode is provided with baffle plate.
Alternatively, described anode is multilayer concentric circle structure; Described power supply unit provides multiple different positive pole to export, and every layer connects different positive poles and exports.
Alternatively, the cathode voltage that described positive pole output is corresponding outwards reduces successively from the center of circle of described concentric structure.
Alternatively, described anode and described semiconductor crystal wafer are all vertically arranged in described electrolytic plating pool.
Alternatively, described anode is horizontally set in described electrolytic plating pool, and described semiconductor crystal wafer is flatly arranged on above described anode.
Alternatively, described electroplanting device also comprises: anode clamp gripping member, and described anode clamp gripping member clamping anode, make anode be in case of bending, the face that described anode is relative with described semiconductor crystal wafer electroplated face is cambered surface.
Alternatively, described substrate fixture clamping semiconductor crystal wafer, make semiconductor crystal wafer be in case of bending, described semiconductor crystal wafer electroplated face is cambered surface.
Alternatively, described electroplanting device also comprises: anode clamp gripping member, described anode clamp gripping member clamping anode, and make anode be in case of bending, the face that described anode is relative with described semiconductor crystal wafer electroplated face is cambered surface; Described substrate fixture clamping semiconductor crystal wafer, make semiconductor crystal wafer be in case of bending, described semiconductor crystal wafer electroplated face is cambered surface; Described semiconductor crystal wafer and described anode are mutually back to bending.
Compared with prior art, the present invention has the following advantages: in electroplating process, distance between anode and semiconductor crystal wafer is increased along region intermediate successively to fringe region, and then make the electric field between anode and semiconductor crystal wafer region intermediate be better than electric field between anode and semiconductor crystal wafer fringe region, the defect of the density of electric fluxline of middle section is greater than with the density of electric fluxline making up fringe region, thus the electrolytic coating deposit thickness reducing fringe region and middle section is poor, ensure that the homogeneity of the metal level that semiconductor crystal wafer deposits or film, finally improve the quality of plating.
Accompanying drawing explanation
Fig. 1 is the structural representation of a rectilinear electroplanting device in prior art;
Fig. 2 is the electric force lines distribution relation schematic diagram between the anode of electroplanting device in prior art and negative electrode;
Fig. 3 is the structural representation of electroplanting device in the embodiment of the present invention one;
Fig. 4 and Fig. 5 is the structural representation of the embodiment of the present invention one Anodic;
Fig. 6 is the structural representation of electroplanting device in the embodiment of the present invention two;
Fig. 7 is the structural representation of the embodiment of the present invention three Anodic;
Fig. 8 is the structural representation of the embodiment of the present invention five Anodic and semiconductor crystal wafer.
Embodiment
For enabling above-mentioned purpose of the present invention, feature and advantage become apparent more, are described in detail the specific embodiment of the present invention below in conjunction with accompanying drawing.
Set forth a lot of detail in the following description so that fully understand the present invention, but the present invention can also adopt other to be different from alternate manner described here to implement, therefore the present invention is not by the restriction of following public specific embodiment.
Just as described in the background section, in prior art on a semiconductor wafer electroplated metal layer or film time, because the electric force lines distribution between anode and negative electrode (i.e. semiconductor crystal wafer) is uneven, therefore cause the middle section electrolytic coating deposit thickness of wafer thin, the defect that peripheral region electrolytic coating deposit thickness is thick.
For above-mentioned defect, the invention provides a kind of electroplanting device, comprising:
Chemical plating groove, comprises electrolytic plating pool;
Anode, is arranged in described electrolytic plating pool;
Substrate fixture, for fixing semiconductor crystal wafer, described semiconductor crystal wafer electroplated face and described anode are oppositely arranged, and the distance between described anode and described semiconductor crystal wafer increases along region intermediate successively to fringe region;
Power supply unit, exports for providing negative pole and positive pole exports, and described negative pole exports and connects semiconductor crystal wafer, and described positive pole exports jointed anode.
The present invention is in electroplating process, distance between anode and semiconductor crystal wafer is increased along region intermediate successively to fringe region, and then make the electric field of anode and semiconductor crystal wafer region intermediate be better than the electric field of anode and semiconductor crystal wafer fringe region, the defect of the density of electric fluxline of middle section is greater than with the density of electric fluxline making up fringe region, thus the electrolytic coating deposit thickness reducing fringe region and middle section is poor, ensure that the homogeneity of the metal level that semiconductor crystal wafer deposits or film, finally improve the quality of plating.
Be described in detail below in conjunction with accompanying drawing.
Embodiment one
Shown in figure 3, present embodiments provide a kind of electroplanting device, comprising:
Chemical plating groove, comprises electrolytic plating pool 110;
Anode 120, is arranged in described electrolytic plating pool 110;
Substrate fixture 130, for fixing semiconductor crystal wafer 140, described semiconductor crystal wafer 140 electroplated face and described anode 120 are oppositely arranged, and the distance between described anode 120 and described semiconductor crystal wafer 140 increases along region intermediate successively to fringe region;
Power supply unit 150, exports for providing negative pole and positive pole exports, and described negative pole exports and connects semiconductor crystal wafer 140, and described positive pole exports jointed anode 120.
Described anode 120 can vertically be arranged in described electrolytic plating pool 110, thus completes electroplating process by the tangential movement of electroplate liquid, and namely electroplanting device can be horizontal.Described anode 120 also can be horizontally set in described electrolytic plating pool 110, thus completes electroplating process by the vertical movement of electroplate liquid, and namely described electroplanting device can be rectilinear.Fig. 3 is described for horizontal electroplanting device, but it does not limit the scope of the invention.
Wherein, the structure of described substrate fixture 130 and power supply unit 150 is all same as the prior art with effect, does not repeat them here.
Wherein, described substrate fixture 130 and anode 120 can carry out suspension to be fixed respectively by the hook (not shown) above electrolytic plating pool 110, and other modes also can be adopted to be fixed, and it does not limit the scope of the invention.
Described anode 120 can be non-inert anode.Now, when on semiconductor crystal wafer 140 during electro-coppering, then anode 120 can be copper coin.In such cases, anode 120 participates in redox reaction, by the own loss of anode 120 to form layers of copper on semiconductor crystal wafer 140.
Described anode 120 can also be noble electrode.Now, when on semiconductor crystal wafer 140 during electro-coppering, then the material of anode 120 can be graphite or platinum, thus anode only plays a part to transmit electronics, does not participate in redox reaction, finally can reduce the loss of antianode 120.
Anode 120 described in the present embodiment can be reticulated structure, namely described anode 120 is provided with multiple through hole, the shape of described through hole can be circle or Polygons etc., thus make electroplate liquid can abundant convection current and diffusion between semiconductor crystal wafer 140 (i.e. negative electrode) and anode 120, concentration polarization can be avoided, be conducive to the escape of gas, finally can improve the homogeneity of metal deposition.It should be noted that, in other embodiments of the invention, described anode 120 also can not arrange through hole, now described anode 120 is the uniform battery lead plate of thickness.
In order to the distance realized between anode 120 and described semiconductor crystal wafer 140 increases along region intermediate successively to fringe region, the face that anode 120 described in the present embodiment is relative with described semiconductor crystal wafer 140 electroplated face can be cambered surface.Now, although in electroplating process, the density of electric fluxline between semiconductor crystal wafer 140 and anode 120 increases along region intermediate successively to fringe region, but because the distance d1 between semiconductor crystal wafer 140 region intermediate and anode 120 region intermediate is less than the distance d2 between semiconductor crystal wafer 140 fringe region and anode 120 fringe region, therefore the electric field between anode 120 and semiconductor crystal wafer 140 region intermediate can be made to be better than electric field between anode 120 and semiconductor crystal wafer 140 fringe region, and then the electrolytic coating deposit thickness that can reduce fringe region and region intermediate is poor, ensure that the homogeneity of the metal level that semiconductor crystal wafer deposits or film, finally improve the quality of plating.
Wherein, the thickness of degree of crook and the size of semiconductor crystal wafer 140, metal level to be deposited or the film of described anode, the factor such as voltage swing, the size of anode 120, the distance between semiconductor crystal wafer 140 and anode 120 that power supply unit 150 provides are relevant.
In first object lesson, shown in figure 3, directly anode 120 can be made into the structure that section is cambered surface.Now described anode 120 can be bending circle or bending Polygons, it is relatively applicable to the relatively good and situation that hardness ratio is larger of anode 120 plasticity-, thus improve electroplating evenness by the mode only changing anode 120 shape, make the relatively simple for structure of electroplanting device.
In second object lesson, in conjunction with reference to shown in figure 4 and Fig. 5, described electroplanting device can also comprise: anode clamp gripping member, is in case of bending for making anode 120 in electroplate liquid.Described anode clamp gripping member can comprise: multiple Support Level 160 and a support bar 170, the first end of described Support Level 160 is fixed on the fringe region of anode 120, second end is fixed on support bar 170, and one end of described support bar 170 is fixed on the central zone of described anode 120.Second end of each Support Level 160 can be intersected in the same position of support bar 170, also can be intersected in the different positions of support bar 170.Described anode 120 can be circular plate type.Case of bending is in order to make anode 120, both can realize by regulating the length of Support Level 160, also can realize by regulating the fixed position of Support Level 160 on support bar 170, the length of Support Level 160 can also be regulated simultaneously and regulate the fixed position of Support Level 160 on support bar 170 to realize.Described Support Level 160 can be conductor wire.
It should be noted that, the present embodiment can also adopt other anode clamp gripping members in electroplate liquid, to be in make anode 120 state that section is cambered surface, and it does not limit the scope of the invention.
Embodiment two
Compared with embodiment one, in conjunction with reference to shown in figure 6, the present embodiment can also be provided with baffle plate 220 at the fringe region of anode 120, and all the other are identical with embodiment one, do not repeat them here.The material of described baffle plate 220 can be any one insulating material, thus described baffle plate 220 can reduce the power line between anode 120 and semiconductor crystal wafer 140 fringe region.Now, the angle of bend of described anode 120 can reduce.
Baffle plate 220 described in the present embodiment is rectangular parallelepiped, specifically can be fixed by the mode hung.It should be noted that, described baffle plate 220 can also for bending arc structure in other embodiments of the invention, and the mode be pasted onto on anode 120 also can be adopted to be fixed for it or other modes are fixed.
The present embodiment is in electroplating process, the distance between anode 120 and semiconductor crystal wafer 140 is not only made to increase successively along region intermediate to fringe region, the defect of the density of electric fluxline of middle section is greater than with the density of electric fluxline making up fringe region, but also the power line of fringe region can be reduced by baffle plate 220, thus the homogeneity of electroplating deposition can be improved further.
Embodiment three
Compared with embodiment one, in conjunction with reference to shown in figure 7, the present embodiment is under the bending prerequisite of holding anode 120, described anode 120 can be multilayer concentric circle structure, now, described power supply unit 150 needs to provide multiple different positive pole to export, and each annulus connects different positive poles and exports.Preferably, the cathode voltage that described positive pole output is corresponding outwards reduces successively from the center of circle of described concentric structure.Now, the angle of bend of described anode 120 can reduce.
As an object lesson, in conjunction with reference to shown in figure 7, anode 120 comprises three concentric(al) circless 121,122 and 123, each concentric(al) circles exports from the different positive poles of power supply unit 150 respectively and is connected, the cathode voltage that concentric(al) circles 121 receives is V1, and the cathode voltage that concentric(al) circles 122 receives is V2, and the cathode voltage that concentric(al) circles 123 receives is V3, wherein, V1 > V2 > V3.
The present embodiment, in electroplating process, not only makes the distance between anode 120 and semiconductor crystal wafer 140 increase successively to fringe region along region intermediate, is greater than the defect of the density of electric fluxline of middle section with the density of electric fluxline making up fringe region; Also for anode 120 different zones provides different cathode voltages, and the cathode voltage of central zone is maximum, and the cathode voltage of fringe region is minimum, thus can improve the homogeneity of electroplating deposition further.
It should be noted that, the present embodiment can also be provided with baffle plate (not shown) at the fringe region of anode 120.
Embodiment four
In order to the distance realized between anode and described semiconductor crystal wafer increases along region intermediate successively to fringe region, semiconductor crystal wafer can be clamped by substrate fixture in the present embodiment, semiconductor crystal wafer is made to be in case of bending, and then make described semiconductor crystal wafer electroplated face be cambered surface, and anode remains relative to semiconductor crystal wafer electroplated face and faces directly, thus reach the effect identical with embodiment one.
Now, the structure of described substrate fixture can anode clamp gripping member in reference example one, also can adopt other structures, not repeat them here.
It should be noted that, the present embodiment can also arrange baffle plate (reference example two) at the fringe region of anode, or anode is set to concentric structure (reference example three).
Embodiment five
Shown in figure 8, the present embodiment can in conjunction with the embodiments one and the structure of embodiment four, make anode 120 be cambered surface relative to semiconductor crystal wafer 140 electroplated face and semiconductor crystal wafer 140 electroplated face is cambered surface simultaneously, wherein, semiconductor crystal wafer 140 and anode 120, mutually back to bending, are less than the distance d2 in semiconductor crystal wafer 140 and anode edge region to make semiconductor crystal wafer 140 with the distance d1 of anode 120 region intermediate.
In addition, the present embodiment can also arrange baffle plate (reference example two) at the fringe region of anode, or anode is arranged on concentric structure (reference example three), all repeats no more at this.
It should be noted that, above embodiment is all for horizontal electroplanting device, and in other embodiments of the invention, described electroplanting device can also be rectilinear, and it does not limit the scope of the invention.In addition, in electroplanting device, miscellaneous part (as: pump, storage tanks, turning axle etc.) is known for those skilled in the art, does not repeat them here.
Although the present invention discloses as above with preferred embodiment, the present invention is not defined in this.Any those skilled in the art, without departing from the spirit and scope of the present invention, all can make various changes or modifications, and therefore protection scope of the present invention should be as the criterion with claim limited range.
Claims (10)
1. an electroplanting device, is characterized in that, comprising:
Chemical plating groove, comprises electrolytic plating pool;
Anode, is arranged in described electrolytic plating pool;
Substrate fixture, for fixing semiconductor crystal wafer, described semiconductor crystal wafer electroplated face and described anode are oppositely arranged, and the distance between described anode and described semiconductor crystal wafer increases along region intermediate successively to fringe region;
Power supply unit, exports for providing negative pole and positive pole exports, and described negative pole exports and connects semiconductor crystal wafer, and described positive pole exports jointed anode;
Anode clamp gripping member, described anode clamp gripping member clamping anode, make anode be in case of bending, the face that described anode is relative with described semiconductor crystal wafer electroplated face is cambered surface;
Described anode clamp gripping member comprises multiple Support Level and a support bar, and the first end of described Support Level is fixed on the fringe region of described anode, and the second end is fixed on described support bar, and one end of described support bar is fixed on the central zone of described anode.
2. electroplanting device as claimed in claim 1, it is characterized in that, described anode is inert anode.
3. electroplanting device as claimed in claim 1, it is characterized in that, described anode is reticulated structure.
4. electroplanting device as claimed in claim 1, it is characterized in that, the fringe region of described anode is provided with baffle plate.
5. electroplanting device as claimed in claim 1, is characterized in that, described anode is multilayer concentric circle structure; Described power supply unit provides multiple different positive pole to export, and every layer connects different positive poles and exports.
6. electroplanting device as claimed in claim 5, is characterized in that, described positive pole exports corresponding cathode voltage and outwards reduces successively from the center of circle of described concentric structure.
7. electroplanting device as claimed in claim 1, it is characterized in that, described anode and described semiconductor crystal wafer are all vertically arranged in described electrolytic plating pool.
8. electroplanting device as claimed in claim 1, it is characterized in that, described anode is horizontally set in described electrolytic plating pool, and described semiconductor crystal wafer is flatly arranged on above described anode.
9. electroplanting device as claimed in claim 1, is characterized in that, described substrate fixture clamping semiconductor crystal wafer, make semiconductor crystal wafer be in case of bending, described semiconductor crystal wafer electroplated face is cambered surface.
10. electroplanting device as claimed in claim 1, is characterized in that, also comprise: anode clamp gripping member, described anode clamp gripping member clamping anode, and make anode be in case of bending, the face that described anode is relative with described semiconductor crystal wafer electroplated face is cambered surface; Described substrate fixture clamping semiconductor crystal wafer, make semiconductor crystal wafer be in case of bending, described semiconductor crystal wafer electroplated face is cambered surface; Described semiconductor crystal wafer and described anode are mutually back to bending.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210027611.6A CN102560587B (en) | 2012-02-08 | 2012-02-08 | Electroplating device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210027611.6A CN102560587B (en) | 2012-02-08 | 2012-02-08 | Electroplating device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102560587A CN102560587A (en) | 2012-07-11 |
| CN102560587B true CN102560587B (en) | 2015-03-18 |
Family
ID=46407136
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210027611.6A Active CN102560587B (en) | 2012-02-08 | 2012-02-08 | Electroplating device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102560587B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111501082B (en) * | 2020-06-04 | 2022-03-29 | 厦门通富微电子有限公司 | Electroplating electrode protection device, electroplating system and semiconductor processing equipment |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1529903A (en) * | 2000-10-02 | 2004-09-15 | �Ƚ�װ�ù�˾ | Plating system with remote secondary anode for semiconductor manufacturing |
| US7147760B2 (en) * | 1998-07-10 | 2006-12-12 | Semitool, Inc. | Electroplating apparatus with segmented anode array |
| CN101265606A (en) * | 2007-03-15 | 2008-09-17 | 台湾积体电路制造股份有限公司 | Apparatuses for electrochemical deposition, and method for forming conductive layer |
| CN102296344A (en) * | 2011-09-06 | 2011-12-28 | 奥特斯维能源（太仓）有限公司 | Solar cell electroplating equipment capable of improving electroplating uniformity |
| CN202492595U (en) * | 2012-02-08 | 2012-10-17 | 南通富士通微电子股份有限公司 | Electroplating device |
-
2012
- 2012-02-08 CN CN201210027611.6A patent/CN102560587B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7147760B2 (en) * | 1998-07-10 | 2006-12-12 | Semitool, Inc. | Electroplating apparatus with segmented anode array |
| CN1529903A (en) * | 2000-10-02 | 2004-09-15 | �Ƚ�װ�ù�˾ | Plating system with remote secondary anode for semiconductor manufacturing |
| CN101265606A (en) * | 2007-03-15 | 2008-09-17 | 台湾积体电路制造股份有限公司 | Apparatuses for electrochemical deposition, and method for forming conductive layer |
| CN102296344A (en) * | 2011-09-06 | 2011-12-28 | 奥特斯维能源（太仓）有限公司 | Solar cell electroplating equipment capable of improving electroplating uniformity |
| CN202492595U (en) * | 2012-02-08 | 2012-10-17 | 南通富士通微电子股份有限公司 | Electroplating device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102560587A (en) | 2012-07-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102560586A (en) | Electroplating method | |
| CN102560612B (en) | Anode assembly for electroplating and electroplating device | |
| CN101743639B (en) | Contact structure for a semiconductor component and a method for production thereof | |
| TWI486492B (en) | Photoplating of metal electrodes for solar cells | |
| CN202492595U (en) | Electroplating device | |
| JP2009534813A (en) | Method for producing electrode for solar cell and electrochemical deposition apparatus therefor | |
| TWI363107B (en) | Method of wafer plating | |
| JP3255145B2 (en) | Plating equipment | |
| CN101985767A (en) | Plating bath capable of realizing different deposition rates | |
| CN102433575B (en) | Method for electrodepositing metal lanthanum in ionic liquid | |
| CN202509152U (en) | Anode subassembly for electroplating and electroplating device | |
| TWI306127B (en) | Current-leveling electroplating/electropolish electrode | |
| CN102560587B (en) | Electroplating device | |
| CN102560611B (en) | Anode assembly and electroplating device for electroplating | |
| CN207159408U (en) | A kind of anode plate structure and copper electroplating machine | |
| CN100449710C (en) | Method and apparatus for electrochemical plating semiconductor wafers | |
| CN100419129C (en) | Electrolyte for copper plating | |
| CN202492609U (en) | Anode assembly for electroplating and electroplating device | |
| CN105277524A (en) | Disposable surface-enhanced Raman spectroscopy chip and preparation method | |
| CN107955958A (en) | The metal plating device of wafer | |
| TW200839038A (en) | Device and method with improved plating film thickness uniformity | |
| CN112831821A (en) | Wafer electroplating device and electroplating method | |
| KR20100050970A (en) | Electro plating equipment and method of electro plating using the same | |
| CN213652697U (en) | Horizontal full-immersion electroplating equipment | |
| US20110259752A1 (en) | Method for substantially uniform copper deposition onto semiconductor wafer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C53 | Correction of patent for invention or patent application | ||
| CB03 | Change of inventor or designer information |
Inventor after: Shi Lei Inventor before: Ding Wanchun |
|
| COR | Change of bibliographic data |
Free format text: CORRECT: INVENTOR; FROM: DING WANCHUN TO: SHI LEI |
|
| C56 | Change in the name or address of the patentee | ||
| CP03 | Change of name, title or address |
Address after: Jiangsu province Nantong City Chongchuan road 226006 No. 288 Patentee after: Tongfu Microelectronics Co., Ltd. Address before: 226006 Jiangsu Province, Nantong City Chongchuan District Chongchuan Road No. 288 Patentee before: Fujitsu Microelectronics Co., Ltd., Nantong |