CN202492595U - Electroplating device - Google Patents
Electroplating device Download PDFInfo
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- CN202492595U CN202492595U CN2012200409861U CN201220040986U CN202492595U CN 202492595 U CN202492595 U CN 202492595U CN 2012200409861 U CN2012200409861 U CN 2012200409861U CN 201220040986 U CN201220040986 U CN 201220040986U CN 202492595 U CN202492595 U CN 202492595U
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- 238000009713 electroplating Methods 0.000 title claims abstract description 37
- 239000004065 semiconductor Substances 0.000 claims abstract description 93
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 238000007747 plating Methods 0.000 claims abstract description 12
- 239000000126 substance Substances 0.000 claims abstract description 5
- 239000013078 crystal Substances 0.000 claims description 87
- 238000005452 bending Methods 0.000 claims description 15
- 238000009434 installation Methods 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 abstract description 16
- 239000002184 metal Substances 0.000 abstract description 16
- 230000002093 peripheral effect Effects 0.000 abstract description 7
- 238000000034 method Methods 0.000 description 19
- 239000000543 intermediate Substances 0.000 description 17
- 239000007788 liquid Substances 0.000 description 11
- 230000002950 deficient Effects 0.000 description 8
- 239000010410 layer Substances 0.000 description 8
- 230000005684 electric field Effects 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 3
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000006479 redox reaction Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
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- Electroplating Methods And Accessories (AREA)
Abstract
The utility model discloses an electroplating device which comprises a chemical plating bath which comprises a plating cell, an anode, a substrate fixing device and a power supply, wherein the anode is arranged inside the plating cell; the substrate fixing device is used for fixing a semiconductor wafer, the to-be-electroplated surface of the semiconductor wafer is opposite to the anode, the distance between the anode and the semiconductor wafer is gradually increased from the middle area to the edge; the power supply is used for providing a cathode output and an anode output, the cathode output is connected with the semiconductor wafer, and the anode output is connected with the anode. The electroplating device is capable of forming an even metal layer or film in the middle area or the peripheral area of the semiconductor wafer, and the electroplating quality is finally improved.
Description
Technical field
The utility model relates to technical field of semiconductors, relates in particular to a kind of electroplanting device.
Background technology
In making unicircuit (IC) semiconducter device, the even degree of substrate surface is quite crucial, and particularly increase of the density of element and dimension shrinks are to time micron grade.The general line that uses metal level as individual elements among the IC separates metal wire with dielectric layer or insulation layer, and between dielectric layer, form groove, interconnection structures such as contact hole, contact, so that the circuit path of conducting metal interlayer to be provided.
Interconnection structure is a main raw to adopt copper or copper alloy in the prior art, specifically can adopt the metal level or the film of following method deposited copper or copper alloy: physical vapor deposition (PVD) method, chemical vapor deposition (CVD) method and plating method.Wherein, plating method can obtain highly purified metal level or film easily, and not only the formation speed of metal level or film is fast, but also can control the thickness of metal level or film with comparalive ease, so plating method have become main stream approach.General copper electroplating process is with wafer contact electricity plating bath, and between positive and negative electrode, provide potential difference with metal refining to semiconductor substrate surface.
Electroplating technology need adopt electroplanting device to realize.According to the difference of electroplanting device structure, can be divided into rectilinear electroplanting device and horizontal electroplanting device.Below be that example describes with rectilinear electroplanting device.
Fig. 1 is the structural representation of a rectilinear electroplanting device in the prior art.Said rectilinear electroplanting device 100 comprises: turning axle 5 be fixed in the substrate stationary installation 4 on the turning axle 5.In electroplating process, wafer 2 is fixed on the substrate pedestal 3, and then substrate pedestal 3 is fixed on the substrate stationary installation 4, immerses then to comprise in the electrolytic plating pool 22 of electroplate liquid.The loop direction of whole electroplate liquid provides successional circulation electroplate liquid through pump 40 shown in arrow 13, electroplate liquid upwards flows to wafer 2, expands outwardly transverse flow then and crosses wafer 2, shown in arrow 14.The loop direction of electroplate liquid is to electroplate liquid storage tanks 20, shown in arrow 10 and 11 from electrolytic plating pool 22 overflows.Electroplate liquid flows back to pump 40 after the strainer (not shown) of flowing through after flowing out storage tanks 20, accomplishes the full cycle step, shown in arrow 12.DC power supply (DC power supply) 50 provides negative pole output and anodal output, and negative pole wherein is electrically connected to wafer 2, and positive pole is electrically connected to the anode 1 in the electrolytic plating pool 22.In electroplating process, power supply unit 50 is applied to wafer 2 with bias voltage, thereby produces with respect to the volts lost of anode 1 for bearing, and makes flow of charge flow to wafer 2 from anode 1.
Fig. 2 is that the anode and the cloudy interpolar electric force lines distribution of electroplanting device concerns synoptic diagram.In Fig. 2, semiconductor crystal wafer 2 is fixed on the substrate stationary installation (not shown among Fig. 2) through substrate pedestal 3.Electrode contactless ring 25 electrically contacts with semiconductor crystal wafer 2 through a plurality of contact pins (contact pin) 25a.Be biased into anode 1 and semiconductor crystal wafer (being negative electrode) between 2 the time when applying, anode and cloudy interpolar volts lost form many power line Fc and Fe.Fc and Fe represent to be in power line and the power line in the peripheral region in the middle section of semiconductor crystal wafer (negative electrode) 2 respectively.Because electrode contactless ring 25 electrically contacts with semiconductor crystal wafer 2 through a plurality of contact pin 25a; Peripheral region at semiconductor crystal wafer 2 causes rapid volts lost near contact pin 25a place, makes near the density of the power line Fe that contacts pin 25a high more than the density of the power line Fc of semiconductor crystal wafer (negative electrode) 2 middle sections.Yet, higher near contact pin 25a power line Fe density, just cause current density higher, and make that the deposit thickness of peripheral region of semiconductor crystal wafer 2 is thicker, and then cause in subsequent technique, bring out and peel off and particle residue.Conductive layer thickness on semiconductor crystal wafer is inhomogeneous, and technology is further worsened, and makes resistance bias higher.
Similarly, in other electroplanting devices of prior art, also exist the middle section deposit thickness of wafer thin, the defective that the peripheral region deposit thickness is thick.Especially after the size of wafer was greater than 8 cun, above-mentioned defective was more obvious.
Therefore, how to guarantee that the metal thickness homogeneity that is deposited on crystal column surface in the electroplating process just becomes those skilled in the art's problem demanding prompt solution.
The utility model content
The problem that the utility model solves provides a kind of electroplanting device, in galvanized process, can form even metal layer or film in the middle section and the peripheral region of semiconductor crystal wafer, finally improves galvanized quality.
For addressing the above problem, the utility model provides a kind of electroplanting device, comprising:
The chemical plating groove comprises electrolytic plating pool;
Anode is arranged in the said electrolytic plating pool;
The substrate stationary installation is used for fixing semiconductor crystal wafer, and said semiconductor crystal wafer electroplated face and said anode are oppositely arranged, and the distance between said anode and the said semiconductor crystal wafer increases to fringe region along region intermediate successively;
Power supply unit is used to provide negative pole output and anodal output, and said negative pole output connects semiconductor crystal wafer, and said anodal output connects anode.
Alternatively, said anode is an inert anode.
Alternatively, said anode is a reticulated structure.
Alternatively, said anodic fringe region is provided with baffle plate.
Alternatively, said anode is a concentric structure; Said power supply unit provides a plurality of different positive poles outputs, and each annulus connects different positive pole output.
Alternatively, the cathode voltage of said anodal output correspondence outwards reduces from the center of circle of said concentric structure successively.
Alternatively, said anode and said semiconductor crystal wafer all are vertically set in the said electrolytic plating pool.
Alternatively, said anode is horizontally set in the said electrolytic plating pool, and said semiconductor crystal wafer flatly is arranged on said anode top.
Alternatively, said electroplanting device also comprises: the anode holder, and said anode holder clamping anode makes anode be in case of bending, and said anode and the relative face of said semiconductor crystal wafer electroplated face are cambered surface.
Alternatively, said substrate stationary installation clamping semiconductor crystal wafer makes semiconductor crystal wafer be in case of bending, and said semiconductor crystal wafer electroplated face is a cambered surface.
Alternatively, said electroplanting device also comprises: the anode holder, and said anode holder clamping anode makes anode be in case of bending, and said anode and the relative face of said semiconductor crystal wafer electroplated face are cambered surface; Said substrate stationary installation clamping semiconductor crystal wafer makes semiconductor crystal wafer be in case of bending, and said semiconductor crystal wafer electroplated face is a cambered surface; Said semiconductor crystal wafer and said anode are each other back to bending.
Compared with prior art; The utlity model has following advantage: in electroplating process; Distance between anode and the semiconductor crystal wafer is increased to fringe region along region intermediate successively; And then make the electric field between anode and the semiconductor crystal wafer region intermediate be better than the electric field between anode and the semiconductor crystal wafer fringe region, with the power line density that the remedies fringe region defective greater than the power line density of middle section, thereby the deposit thickness that reduces fringe region and middle section is poor; Guarantee the homogeneity of sedimentary metal level of semiconductor crystal wafer or film, finally improved galvanized quality.
Description of drawings
Fig. 1 is the structural representation of a rectilinear electroplanting device in the prior art;
Fig. 2 is that the anode and the cloudy interpolar electric force lines distribution of electroplanting device in the prior art concerns synoptic diagram;
Fig. 3 is the structural representation of electroplanting device among the utility model embodiment one.
Fig. 4 and Fig. 5 are anodic structural representation among the utility model embodiment one;
Fig. 6 is the structural representation of electroplanting device among the utility model embodiment two;
Fig. 7 is an anodic structural representation among the utility model embodiment three;
Fig. 8 is the structural representation of anode and semiconductor crystal wafer among the utility model embodiment five.
Embodiment
For above-mentioned purpose, the feature and advantage that make the utility model can be more obviously understandable, the embodiment of the utility model is done detailed explanation below in conjunction with accompanying drawing.
A lot of details have been set forth in the following description so that make much of the utility model; But the utility model can also adopt other to be different from alternate manner described here and implement, so the utility model does not receive the restriction of following disclosed specific embodiment.
Said as the background technology part; In the prior art on semiconductor crystal wafer when electroplated metal layer or film; Because the electric force lines distribution between anode and negative electrode (being semiconductor crystal wafer) is inhomogeneous, therefore cause the middle section deposit thickness of wafer thin, the defective that the peripheral region deposit thickness is thick.
To above-mentioned defective, the utility model provides a kind of electroplanting device, comprising:
The chemical plating groove comprises electrolytic plating pool;
Anode is arranged in the said electrolytic plating pool;
The substrate stationary installation is used for fixing semiconductor crystal wafer, and said semiconductor crystal wafer electroplated face and said anode are oppositely arranged, and the distance between said anode and the said semiconductor crystal wafer increases to fringe region along region intermediate successively;
Power supply unit is used to provide negative pole output and anodal output, and said negative pole output connects semiconductor crystal wafer, and said anodal output connects anode.
The utility model is in electroplating process; Distance between anode and the semiconductor crystal wafer is increased to fringe region along region intermediate successively; And then the electric field that makes anode and semiconductor crystal wafer region intermediate is better than the electric field of anode and semiconductor crystal wafer fringe region; With the power line density that remedies fringe region defective greater than the power line density of middle section; Thereby the deposit thickness that reduces fringe region and middle section is poor, has guaranteed the homogeneity of sedimentary metal level of semiconductor crystal wafer or film, has finally improved galvanized quality.
Be elaborated below in conjunction with accompanying drawing.
Embodiment one
With reference to shown in Figure 3, present embodiment provides a kind of electroplanting device, comprising:
The chemical plating groove comprises electrolytic plating pool 110;
Substrate stationary installation 130 is used for fixing semiconductor crystal wafer 140, and said semiconductor crystal wafer 140 electroplated faces and said anode 120 are oppositely arranged, and the distance between said anode 120 and the said semiconductor crystal wafer 140 increases to fringe region along region intermediate successively;
Said anode 120 can be vertically set in the said electrolytic plating pool 110, thereby accomplishes electroplating process through the tangential movement of electroplate liquid, and promptly electroplanting device can be horizontal.Said anode 120 also can be horizontally set in the said electrolytic plating pool 110, thereby accomplishes electroplating process through the vertical movement of electroplate liquid, and promptly said electroplanting device can be for rectilinear.Fig. 3 is that example describes with the horizontal electroplanting device, but it does not limit the protection domain of the utility model.
Wherein, the structure of said substrate stationary installation 130 and power supply unit 150 is all identical with prior art with effect, repeats no more at this.
Wherein, said substrate stationary installation 130 and anode 120 can be respectively hook (not shown) through electrolytic plating pool 110 tops hang fixingly, also can adopt other modes to fix, it does not limit the protection domain of the utility model.
Said anode 120 can be non-inert anode.At this moment, when electro-coppering on semiconductor crystal wafer 140, then anode 120 can be copper coin.In such cases, anode 120 is participated in redox reactions, and the own loss through anode 120 is to form the copper layer on semiconductor crystal wafer 140.
Said anode 120 can also be noble electrode.At this moment, when electro-coppering on semiconductor crystal wafer 140, then the material of anode 120 can be graphite or platinum, thereby anode only plays a part to transmit electronics, does not participate in redox reaction, finally can reduce the loss of antianode 120.
Anode described in the present embodiment 120 can be reticulated structure; Be that said anode 120 is provided with a plurality of through holes; The shape of said through hole can be circle or Polygons etc., thereby makes fully convection current and the diffusion between semiconductor crystal wafer 140 (being negative electrode) and anode 120 of plating fluid power, can avoid concentration polarization; Help the escape of gas, finally can improve the homogeneity of metal deposition.Need to prove, in other embodiment of the utility model, also through hole can be set on the said anode 120, this moment, said anode 120 was the uniform battery lead plate of thickness.
In order to realize that the distance between anode 120 and the said semiconductor crystal wafer 140 increases to fringe region along region intermediate successively, anode described in the present embodiment 120 can be cambered surface with the relative face of said semiconductor crystal wafer 140 electroplated faces.At this moment; Though in electroplating process; Power line density between semiconductor crystal wafer 140 and the anode 120 increases to fringe region along region intermediate successively; But since between semiconductor crystal wafer 140 region intermediates and anode 120 region intermediates apart from d1 less than between semiconductor crystal wafer 140 fringe regions and anode 120 fringe regions apart from d2; Therefore can make the electric field between anode 120 and semiconductor crystal wafer 140 region intermediates be better than the electric field between anode 120 and semiconductor crystal wafer 140 fringe regions; And then the deposit thickness that can reduce fringe region and region intermediate is poor, has guaranteed the homogeneity of sedimentary metal level of semiconductor crystal wafer or film, has finally improved galvanized quality.
Wherein, the factors such as distance between size, semiconductor crystal wafer 140 and the anode 120 of the voltage swing that provides of said anodic degree of crook and the size of semiconductor crystal wafer 140, the thickness of treating depositing metal layers or film, power supply unit 150, anode 120 are relevant.
In first object lesson,, can directly anode 120 be made into the structure that section is a cambered surface with reference to shown in Figure 3.This moment, said anode 120 can be crooked circle or crooked Polygons; It relatively is fit to the situation that anode 120 plasticity-are relatively good and hardness ratio is bigger; Thereby the mode through only changing anode 120 shapes improves electroplating evenness, makes the relatively simple for structure of electroplanting device.
In second object lesson, in conjunction with reference to figure 4 with shown in Figure 5 shown in, said electroplanting device can also comprise: the anode holder is used for making anode 120 to be in the state that section is a cambered surface at electroplate liquid.Said anode holder can comprise: a plurality of Support Level 160 and a support bar 170; First end of said Support Level 160 is fixed on the fringe region of anode 120; Second end is fixed on the support bar 170, and an end of said support bar 170 is fixed on the central zone of said anode 120.Second end of each Support Level 160 can be intersected in the same position of support bar 170, also can be intersected in the different positions of support bar 170.Said anode 120 can be circle.In order to make anode 120 be in case of bending; Both can realize through the length of adjustable support line 160; Can realize that also realize the length of adjustable support line 160 and adjustable support line 160 fixed position on support bar 170 simultaneously through the fixed position of adjustable support line 160 on support bar 170.Said Support Level 160 can be conductor wire.
Need to prove that present embodiment can also adopt other anode holders so that anode 120 is in the state that section is a cambered surface in electroplate liquid, it does not limit the protection domain of the utility model.
Embodiment two
Compare with embodiment one, shown in Figure 6 in conjunction with reference, present embodiment can also be provided with baffle plate 220 at the fringe region of anode 120, and all the other are identical with embodiment one, repeat no more at this.The material of said baffle plate 220 can be any one insulating material, thereby said baffle plate 220 can reduce the power line between anode 120 and semiconductor crystal wafer 140 fringe regions.At this moment, the angle of bend of said anode 120 can reduce.
Baffle plate described in the present embodiment 220 is a rectangular parallelepiped, specifically can fix through the mode of suspension.Need to prove that can also be the arc structure of bending at baffle plate 220 described in other embodiment of the utility model, it also can adopt the mode that sticks on the anode 120 to fix or other modes are fixed.
Present embodiment is in electroplating process; Distance between anode 120 and the semiconductor crystal wafer 140 is reduced to fringe region along region intermediate successively; With the power line density that remedies fringe region defective greater than the power line density of middle section; But also can reduce the power line of fringe region, thereby can further improve the homogeneity of electroplating deposition through baffle plate 220.
Embodiment three
Compare with embodiment one, shown in Figure 7 in conjunction with reference, present embodiment is under the prerequisite of holding anode 120 bendings; Said anode 120 can be concentric structure; At this moment, said power supply unit 150 need provide a plurality of different positive poles outputs, and each annulus connects different positive pole output.Preferably, the cathode voltage of said anodal output correspondence outwards reduces from the center of circle of said concentric structure successively.At this moment, the angle of bend of said anode 120 can reduce.
As an object lesson, shown in Figure 7 in conjunction with reference, anode 120 comprises three concentric(al) circless 121,122 and 123; Each concentric(al) circles links to each other with the different anodal output of power supply unit 150 respectively; The cathode voltage that concentric(al) circles 121 receives is V1, and the cathode voltage that concentric(al) circles 122 receives is V2, and the cathode voltage that concentric(al) circles 123 receives is V3; Wherein, V1＞V2＞V3.
Present embodiment not only makes the distance between anode 120 and the semiconductor crystal wafer 140 increase successively to fringe region along region intermediate in electroplating process, with the power line density that the remedies fringe region defective greater than the power line density of middle section; Also for anode 120 different zones different cathode voltages is provided, and the cathode voltage of central zone is maximum, the cathode voltage of fringe region is minimum, thereby can further improve the homogeneity of electroplating deposition.
Need to prove that present embodiment can also be provided with the baffle plate (not shown) at the fringe region of anode 120.
Embodiment four
In order to realize that the distance between anode and the said semiconductor crystal wafer increases to fringe region along region intermediate successively; Can pass through substrate stationary installation clamping semiconductor crystal wafer in the present embodiment; Make semiconductor crystal wafer be in case of bending; And then to make said semiconductor crystal wafer electroplated face be cambered surface, and anode remains with respect to semiconductor crystal wafer electroplated face and face directly, thereby reach the effect identical with embodiment one.
At this moment, the structure of said substrate stationary installation can reference implementation anode holder in the example one, also can adopt other structures, repeat no more at this.
Need to prove that present embodiment can also be provided with baffle plate (reference implementation example two) at the anodic fringe region, or anode is set to concentric structure (reference implementation example three).
Embodiment five
With reference to shown in Figure 8; Present embodiment can combine the structure of embodiment one and embodiment four; Making anode 120 simultaneously is that cambered surface and semiconductor crystal wafer 140 electroplated faces are cambered surface with respect to semiconductor crystal wafer 140 electroplated faces; Wherein, semiconductor crystal wafer 140 and anode 120 be each other back to bending so that semiconductor crystal wafer 140 and anode 120 region intermediates apart from d1 less than semiconductor crystal wafer 140 and anode edge zone apart from d2.
In addition, present embodiment can also be provided with baffle plate (reference implementation example two) at the anodic fringe region, or anode is arranged on concentric structure (reference implementation example three), all repeats no more at this.
Need to prove that above embodiment is to be example with the horizontal electroplanting device, in other embodiment of the utility model, said electroplanting device can also be for rectilinear, and it does not limit the protection domain of the utility model.In addition, miscellaneous part in the electroplanting device (as: pump, storage tanks, turning axle etc.) is known for those skilled in the art, repeats no more at this.
Though oneself discloses the utility model as above with preferred embodiment, the utility model is not to be defined in this.Any those skilled in the art in spirit that does not break away from the utility model and scope, all can do various changes and modification, so the protection domain of the utility model should be as the criterion with claim institute restricted portion.
Claims (11)
1. an electroplanting device is characterized in that, comprising:
The chemical plating groove comprises electrolytic plating pool;
Anode is arranged in the said electrolytic plating pool;
The substrate stationary installation is used for fixing semiconductor crystal wafer, and said semiconductor crystal wafer electroplated face and said anode are oppositely arranged, and the distance between said anode and the said semiconductor crystal wafer increases to fringe region along region intermediate successively;
Power supply unit is used to provide negative pole output and anodal output, and said negative pole output connects semiconductor crystal wafer, and said anodal output connects anode.
2. electroplanting device as claimed in claim 1 is characterized in that, said anode is an inert anode.
3. electroplanting device as claimed in claim 1 is characterized in that, said anode is a reticulated structure.
4. electroplanting device as claimed in claim 1 is characterized in that, said anodic fringe region is provided with baffle plate.
5. electroplanting device as claimed in claim 1 is characterized in that, said anode is a concentric structure; Said power supply unit provides a plurality of different positive poles outputs, and each annulus connects different positive pole output.
6. electroplanting device as claimed in claim 5 is characterized in that, the cathode voltage of said anodal output correspondence outwards reduces from the center of circle of said concentric structure successively.
7. electroplanting device as claimed in claim 1 is characterized in that, said anode and said semiconductor crystal wafer all are vertically set in the said electrolytic plating pool.
8. electroplanting device as claimed in claim 1 is characterized in that, said anode is horizontally set in the said electrolytic plating pool, and said semiconductor crystal wafer flatly is arranged on said anode top.
9. electroplanting device as claimed in claim 1 is characterized in that, also comprises: the anode holder, and said anode holder clamping anode makes anode be in case of bending, and said anode and the relative face of said semiconductor crystal wafer electroplated face are cambered surface.
10. electroplanting device as claimed in claim 1 is characterized in that, said substrate stationary installation clamping semiconductor crystal wafer makes semiconductor crystal wafer be in case of bending, and said semiconductor crystal wafer electroplated face is a cambered surface.
11. electroplanting device as claimed in claim 1 is characterized in that, also comprises: the anode holder, said anode holder clamping anode makes anode be in case of bending, and said anode and the relative face of said semiconductor crystal wafer electroplated face are cambered surface; Said substrate stationary installation clamping semiconductor crystal wafer makes semiconductor crystal wafer be in case of bending, and said semiconductor crystal wafer electroplated face is a cambered surface; Said semiconductor crystal wafer and said anode are each other back to bending.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012200409861U CN202492595U (en) | 2012-02-08 | 2012-02-08 | Electroplating device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012200409861U CN202492595U (en) | 2012-02-08 | 2012-02-08 | Electroplating device |
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| CN202492595U true CN202492595U (en) | 2012-10-17 |
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| CN2012200409861U Expired - Lifetime CN202492595U (en) | 2012-02-08 | 2012-02-08 | Electroplating device |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102560587A (en) * | 2012-02-08 | 2012-07-11 | 南通富士通微电子股份有限公司 | Electroplating device |
| CN104233410A (en) * | 2013-06-24 | 2014-12-24 | 马悦 | Device for electrochemically depositing metals on substrate |
| CN106917121A (en) * | 2017-03-02 | 2017-07-04 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | Wafer electroplating device and electroplating method |
| CN107447242A (en) * | 2016-05-31 | 2017-12-08 | 台湾积体电路制造股份有限公司 | Electroplanting device and method |
| CN111501082A (en) * | 2020-06-04 | 2020-08-07 | 厦门通富微电子有限公司 | Electrode protection devices for electroplating, electroplating systems and semiconductor processing equipment |
-
2012
- 2012-02-08 CN CN2012200409861U patent/CN202492595U/en not_active Expired - Lifetime
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102560587A (en) * | 2012-02-08 | 2012-07-11 | 南通富士通微电子股份有限公司 | Electroplating device |
| CN102560587B (en) * | 2012-02-08 | 2015-03-18 | 南通富士通微电子股份有限公司 | Electroplating device |
| CN104233410A (en) * | 2013-06-24 | 2014-12-24 | 马悦 | Device for electrochemically depositing metals on substrate |
| CN107447242A (en) * | 2016-05-31 | 2017-12-08 | 台湾积体电路制造股份有限公司 | Electroplanting device and method |
| CN107447242B (en) * | 2016-05-31 | 2020-09-08 | 台湾积体电路制造股份有限公司 | Electroplating apparatus and method |
| CN106917121A (en) * | 2017-03-02 | 2017-07-04 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | Wafer electroplating device and electroplating method |
| CN111501082A (en) * | 2020-06-04 | 2020-08-07 | 厦门通富微电子有限公司 | Electrode protection devices for electroplating, electroplating systems and semiconductor processing equipment |
| CN111501082B (en) * | 2020-06-04 | 2022-03-29 | 厦门通富微电子有限公司 | Electroplating electrode protection device, electroplating system and semiconductor processing equipment |
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