US20050104516A1 - Super-thin OLED and method for manufacturing the same - Google Patents
Super-thin OLED and method for manufacturing the same Download PDFInfo
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- US20050104516A1 US20050104516A1 US10/976,807 US97680704A US2005104516A1 US 20050104516 A1 US20050104516 A1 US 20050104516A1 US 97680704 A US97680704 A US 97680704A US 2005104516 A1 US2005104516 A1 US 2005104516A1
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- organic light
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
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- 230000005525 hole transport Effects 0.000 description 1
- 229960002050 hydrofluoric acid Drugs 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
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- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 1
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
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- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/311—Flexible OLED
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/351—Thickness
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/128—Active-matrix OLED [AMOLED] displays comprising two independent displays, e.g. for emitting information from two major sides of the display
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/17—Passive-matrix OLED displays
- H10K59/176—Passive-matrix OLED displays comprising two independent displays, e.g. for emitting information from two major sides of the display
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/90—Assemblies of multiple devices comprising at least one organic light-emitting element
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the present invention relates to a super-thin, organic, light-emitting display (OLED) having a super thin glass substrate and a method for manufacturing the same.
- OLED organic, light-emitting display
- Planarized display devices such as an OLED or a thin film transistor liquid crystal display (TFT-LCD) can be formed in super thin and flexible structures.
- a super thin and flexible planarized display device may be produced using a flexible substrate, typically formed of a synthesized resin.
- the thickness of the substrate is maintained in a conventional thickness range because there is significant risk that the synthesized substrate, or thin film layers formed on it, will be deformed during the complicated manufacturing processes.
- Conventional flexible planarized display devices typically bind a highly flexible substrate to a transparent substrate using organic thin films.
- One thin film is formed on one substrate, another on the other substrate.
- the two films are then aligned, placed in contact with each other, and sealed to bond the films together.
- a significant disadvantage associated with producing OLEDs in this manner is that aligning the organic thin films is difficult, not only because the thin films are manufactured separately, but also because it is nearly impossible to tightly adhere thin films that have the same or a similar predetermined pattern.
- each the thickness of the substrate is maintained in a conventional range, which typically exceeds 0.5 mm, because the substrate must have a predetermined strength and temperature resistance to withstand the complicated processes used to from a thin film layers (at least one or more of which may be an organic film) on the substrate.
- Glass materials have been used to form conventional OLED substrates, but the thickness of these substrates could not be reduced to less than 0.5 mm, due to the fabrication constraints described above.
- the present invention provides a flat panel display that includes a glass substrate, an organic light-emitting part, and a sealing part.
- the organic light-emitting part includes one or more organic light-emitting devices (OLED) formed on a surface of the glass substrate, which has a thickness of about 0.05 mm to about 0.5 mm.
- the sealing part seals the organic light-emitting part and protects it from damage during the manufacturing process.
- a method for manufacturing the flat panel display comprises preparing a glass substrate of approximately 0.7 mm thickness or greater; forming a plurality of organic light-emitting devices on a surface of the substrate, wherein the organic light-emitting part comprises a grouping of one or more of the plurality of organic light-emitting devices; sealing each organic light-emitting part; and etching the glass substrate to a predetermined thickness.
- the OLED includes a glass substrate of approximately 0.05 mm to approximately 0.5 mm thickness, an organic light emission layer in contact with a surface of the glass substrate, and a sealing part to seal the organic light emission layer.
- a first electrode is formed on one side of the organic light emission layer, and a second electrode is formed on a second side of the organic light emission layer.
- the sealing part is a stacked film which includes at least a barrier layer and a polymer layer.
- the flat panel display may further include a circular polarized film attached to an outer surface of the sealing part.
- An embodiment of a flat panel display having front and back viewing areas on which the same or different pictures can be displayed substantially simultaneously, together with various methods of manufacture, are also disclosed.
- FIG. 2 is a cross-sectional view of a sealing part shown in FIG. 1 .
- FIG. 3 is a cross-sectional view of an example of an OLED light-emitting part is shown in FIG. 1 .
- FIG. 4 is a cross-sectional view of another example of the OLED light-emitting part in FIG. 1 .
- FIGS. 6 and 7 are cross-sectional views illustrating different embodiments of the manufacturing steps described with reference to FIG. 5D .
- FIG. 8 is a cross-sectional view of an OLED configured in accordance with an embodiment of the present invention.
- FIG. 1 is a cross-sectional view of an OLED configured in accordance with an embodiment of the present invention.
- the organic light-emitting device includes a transparent glass substrate 1 , an organic light-emitting part 2 , and a sealing part 3 that seals the organic light-emitting part 2 .
- the sealing part 3 can include at least a barrier layer and at least a polymer layer. However, as seen in FIG. 2 , the sealing part 3 can also include a polymer layer 32 inserted between a barrier layers 31 and 33 .
- the barrier layers 31 and 33 that constitute a sealing part 3 can be formed of a transparent blocking material, but are not necessarily limited thereto.
- the barrier layer can be formed of a material selected from a metal oxide, a metal nitride, a metal carbide, a metal oxynitride, and a compound of these materials.
- the metal oxide can be an oxide selected from silica, alumina, titania, indium oxide, tin oxide, indium tin oxide, and a compound of these materials.
- the metal nitride can be an aluminum nitride, a silicon nitride, and a compound of these materials.
- the metal carbide can be a silicon carbide, and the metal oxynitride can be a silicon oxynitride.
- Other inorganic materials, such as silicon, that block penetration of moisture or oxygen can also be used as material for the barrier layer.
- barrier layers can be formed using a chemical or vacuum deposition method. However, when a barrier layer is formed using a vacuum deposition method, pores in the barrier layer can grow. To prevent pores from growing, a polymer layer may be formed on the barrier layer.
- the polymer layer may be formed of a polymer selected from an organic polymer, an inorganic polymer, an organometallic polymer, and a hybrid organic/inorganic polymer.
- sealing part 3 can be formed in a variety of forms other than the structure described above, including a super thin sealing part 3 formed in thin films.
- Other thin films that from a sealing part in a super thin structure may also include a polymer layer and a barrier layer, as described above.
- the organic light-emitting part 2 includes an organic light-emitting device, and can be a region for defining a predetermined image.
- the organic light-emitting device is a pixel.
- the organic light-emitting device can be either a passive matrix organic light-emitting device (PMOLED) or an active matrix organic light-emitting device (AMOLED) having a thin film transistor.
- PMOLED passive matrix organic light-emitting device
- AMOLED active matrix organic light-emitting device having a thin film transistor.
- FIG. 3 shows an example of a PMOLED.
- the PMOLED includes a glass substrate 1 , a stripe-patterned first electrode layer 21 formed on the glass substrate 1 , as well as an organic layer 23 and a second electrode layer 24 sequentially formed on the first electrode layer 21 .
- an insulating layer 22 can further be formed between each pattern line of the first electrode layer 21 .
- the second electrode layer 24 can be formed in a pattern substantially orthogonal to the pattern of the first electrode layer 22 .
- the organic layer 23 can be formed of a polymer or non-polymer organic layer.
- the organic layer 23 can be single-layered or multi-layered.
- An exemplary multi-layered organic layer 23 includes a Hole Injection Layer (HIL), a Hole Transport Layer (HTL), an Emission Layer (EML), an Electron Transport Layer (ETL), and an Electron Injection Layer (EIL).
- Organic materials that may be used are copper phthalocyanine (CuPc), N,N′-Di(naphthalene-1-yl)-N,N′-diphenyl-benzidine (NPB), or tris-8-hydroxyquinoline aluminum (Alq3), but are not limited thereto.
- the non-polymer organic layer can also be formed using a vacuum deposition method.
- the organic layer 23 can be formed of a HTL and an EML.
- the HTL can be formed of PEDOT (poly(3,4-ethylenedioxythiophene)
- the EML can be formed of a Poly-Phenylenevinylene (PPV) and Polyfluorene.
- a screen printing method or an ink jet printing method can be used for forming these layers.
- the first electrode layer 21 performs as an anode
- the second electrode layer 24 performs as a cathode.
- the function of these electrodes can be reversed.
- the organic light-emitting device is a rearward light-emitting device.
- the first electrode layer 21 is an electrode formed of a transparent conductive material such as, but not limited to, indium tin oxide (ITO).
- ITO indium tin oxide
- the second electrode layer 24 is formed by depositing ITO, or similar transparent conductive material, on a semi-transparent thin film made of Magnesium-Silver (Mg—Ag) or similar metal or metal alloy.
- FIG. 4 shows an example of an AMOLED.
- the pixels of the organic light-emitting part 2 of FIG. 1 have the same thin film transistor (TFT) structure and electrode (EL) device (OLED), as depicted in FIG. 4 .
- TFT thin film transistor
- EL electrode
- FIG. 4 shows an example of an AMOLED.
- the TFT configuration of FIG. 4 is not necessarily limited to that shown, but may vary depending on the embodiment.
- a buffer layer 11 formed of SiO 2 is formed on a glass substrate 1 , and a TFT is formed on the buffer layer 11 .
- the TFT has an active layer 12 formed on the buffer layer 11 , a gate insulating film 13 formed on the active layer 12 , and a gate electrode 14 formed on the gate insulating film 13 .
- the active layer 12 can be formed of an amorphous silicon thin film or polycrystalline silicon thin film.
- the active layer 12 has a source region and a drain region heavily doped with an n-type or a p-type dopant, respectively.
- a gate insulating film 13 is formed on the active layer 12 , and a gate electrode 14 formed of a conductive film made of MoW or aluminum/ copper (Al/Cu) is formed on a predetermined region on the gate insulating film 13 .
- the gate electrode 14 is connected to a gate line that applies an on/off signal to the TFT.
- the region for forming the gate electrode 14 corresponds to a region for forming a channel region of the active layer 12 .
- An interinsulating layer 15 is formed on the gate electrode 12 , and a source electrode 16 and a drain electrode 17 are respectively connected through contact holes to the source region and the drain region formed on the active layer 12 .
- a passivation film 18 formed of SiO 2 covers the source electrode 16 and the drain electrode 17 , and a planarized film 19 formed of acryl or polyimide is formed on the passivation film 18 .
- the planarized film 19 covers a portion of a lower electrode 21 .
- the planarized film 19 includes a opening therein, which serves as a via.
- a lower electrode 21 forms the bottom of the opening.
- An organic emission layer 23 is formed within the opening in contact with surfaces of the planarized film 19 which from a sides of the opening, and in contact with an upper surface of the lower electrode 21 .
- An upper electrode 24 is formed on a surface of the planarization film 19 and the organic emission layer 21 .
- the TFT is connected to at least a capacitor (not shown) and to a power source.
- the drain electrode 17 is connected to the first electrode layer (lower electrode) 21 which, in this embodiment, is an anode of the OLED.
- variable current passing between the lower electrode 21 and the upper electrode 24 energizes the organic emission layer 23 , causing it to emit various wavelengths (and colors) of light in approximate proportion to the amount of current received.
- the organic emission layer 23 can emit one of a red (R), green (G), or blue (B) color to display predetermined image information.
- the first electrode layer (lower electrode) 21 is connected to the drain electrode 17 of the TFT and receives a positive power source therefrom.
- the second electrode layer (upper electrode) 24 covers whole pixels and supplies a negative power source.
- the organic layer 23 which emits light in response to current supplied thereto, is disposed between the first electrode 21 and second electrode 24 .
- the first electrode layer 21 can be formed of a transparent conductive material such as, but not limited to indium tin oxide (ITO). If the OLED is a rear light-emitting device, the second electrode layer 24 can be formed such that it emits light toward the glass substrate 1 . In such an embodiment, the second electrode layer 24 can be formed by depositing Al/LiF on the entire surface.
- ITO indium tin oxide
- the layer 24 can be formed by depositing indium tin oxide (ITO) on a semi-transparent thin film formed of Magnesium-Silver (Mg—Ag).
- ITO indium tin oxide
- Mg—Ag Magnesium-Silver
- the second electrode layer 24 need not necessarily be formed by depositing its formation material on the entire surface of the substrate or a layer thereof, but rather can be formed in variety of patterns.
- the first electrode layer 21 and the second electrode layer 24 can be configured to have reverse positions and functions.
- an OLED configured in accordance with an embodiment of the present invention has a thickness of approximately 0.05 mm to approximately 0.5 mm. Because a glass substrate 1 of this approximate thickness is super-thin, there is a risk that deformation of the substrate 1 will occur if the conventional manufacturing processes described above are used. To prevent or reduce deformation, an embodiment of the present invention uses an etching process to from a glass substrate 1 to a super-thin thickness of approximately 0.05 mm to approximately 0.5 mm.
- a transparent glass substrate 10 is prepared.
- the thickness T of the transparent glass substrate 10 is sufficiently thick so that the transparent glass substrate 10 has sufficient structural strength to prevent pattern or reduce deformation of the organic light-emitting part during image formation and to prevent or reduce damages or defects during the manufacturing process.
- the thickness T of the transparent glass substrate 10 can be more than 0.7 mm.
- a plurality of organic light-emitting parts 2 are formed on the transparent glass substrate 10 .
- the organic light-emitting parts 2 are identical in configuration and function as the organic light-emitting parts 2 described with reference to FIGS. 1, 2 , 3 and 4 .
- the organic light-emitting parts 2 are sealed by sealing parts 3 .
- the sealing parts 3 can be formed in the thin films as described above.
- the sealing parts 3 After forming the sealing parts 3 , the plurality of organic light-emitting parts 2 are sealed by a sealing glass 50 ( FIG. 5D ). Then a sealing material 51 is applied on edges of the organic light-emitting part region, and the sealing glass 50 is bonded to the sealing material 51 . In this manner, the transparent glass substrate 10 and the sealing glass 50 are bonded and sealed on the edge regions by the sealing material 51 .
- the product is immersed in a basin 52 which contains a predetermined etching solution 53 .
- the etching solution can be fluoric acid, hydrochloric acid, or similar etching material. Over time, the etching solution reduces the thickness T of the transparent glass substrate 10 to a value of approximately 0.05 mm approximately 0.5 mm.
- the sealing glass 50 and the glass substrate 10 are simultaneously, or nearly simultaneously, cut at predetermined cutting points, which may vary, depending on how the organic light-emitting parts 2 were first positioned.
- the sealing glass easily separates from each organic light-emitting part 2 . Thereafter, the sealed edges and pieces of cut sealing glass can be discarded or recycled. In this manner, the organic light-emitting parts can be readily obtained without using an additional separation process because the sealing glass 50 is not bonded to each organic light-emitting part 2 , but only to the edges of each region.
- each piece represents the OLED shown in FIG. 1 .
- a sealing film 54 can be used instead of the sealing glass 50 .
- the sealing film 54 is formed of a material or materials that are insoluble and impermeable to the etching solution 53 .
- the transparent glass 10 can be sealed with a resin material 55 .
- an additional process for removing the sealing resin material 55 after etching is required.
- FIG. 8 is a cross-sectional view of an OLED configured in accordance with another exemplary embodiment of the present invention.
- the basic structure of the OLED of FIG. 8 is the same structure of the OLED described with reference to FIGS. 1, 2 , 3 and 4 .
- a frontal light emission OLED that is, an OLED where the light is emitted toward the sealing part 3 .
- a circular polarized film 6 can be attached on an outer surface of the sealing part 3 to not only block external light from reaching the organic light-emitting devices, but also to give the sealing part 3 an increased predetermined strength.
- the strength of the sealing part 3 can be increased by attaching a glass substrate or film having a thickness of approximately 0.05 mm to approximately 0.3 mm to the sealing part 3 .
- FIG. 9 an OLED configured in accordance with another exemplary embodiment of the present invention is depicted. This is a double-sided OLED formed by combining two OLEDs configured as described above.
- the OLED depicted in FIG. 9 includes a first OLED 40 and a second OLED 40 ′.
- the first OLED 40 includes a display region 4 and a terminal region 8 having an organic light-emitting device formed on the glass substrate 1 .
- the display region 4 is sealed by a sealing part 3 .
- the display region 4 can be considered as a corresponding part to the organic light-emitting part 2 in FIG. 1 , but is not limited thereto.
- the sealing part in this figure is identical to the sealing part 3 previously mentioned.
- the terminal region 8 is not sealed by the sealing part 3 but is exposed to the outside.
- connecting parts 9 such as chip on glass (COG) or flexible printed circuit (FPC) for connecting the external electronic devices are connected to the terminal region 8 .
- the second OLED 40 ′ has the same structure as the first OLED 40 , therefore, a detailed description thereof will be omitted.
- the sealing parts 3 and 3 ′ of the first and the second OLEDs 40 and 40 ′ are bonded contacting each other so that the glass substrates 1 and 1 ′ face outward.
- the terminal regions 8 and 8 ′ are bonded to face in opposite directions. This bonding configuration of the terminal regions 8 and 8 ′ permits the later connection of external devices to the connecting parts 9 and 9 ′. In this manner, a super-thin, double-sided OLED can be constructed.
- the circular polarized films 6 and 6 ′ can be applied on each external surface of the substrates 1 and 1 ′ (or sealing parts 3 and 3 ′) to block external light and increase the strength of is the substrate 1 and 1 ′ (or sealing parts 3 and 3 ′).
- embodiments of the present invention permit a super-thin OLED to be manufactured to have a super-thin glass substrate that is not damaged during the manufacturing process. Moreover, adding a circularly polarized film to an outer surface of a sealing part increases the strength of a super thin OLED and blocks light from reaching and interfering with the organic light-emitting devices.
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Abstract
A flat panel display includes a glass substrate, an organic light-emitting part, and a sealing part. The organic light-emitting part includes one or more organic light-emitting devices (OLED) formed on a surface of the glass substrate, which has a thickness of about 0.05 mm to about 0.5 mm. The sealing part seals the organic light-emitting part and protects it from damage during the manufacturing process. A method for manufacturing the flat panel display comprises preparing a glass substrate of approximately 0.7 mm thickness or greater; forming a plurality of organic light-emitting devices on a surface of the glass substrate, wherein a group of one or more of the plurality of organic light-emitting devices constitutes an organic light-emitting part; sealing each organic light-emitting part; and etching the glass substrate to a predetermined thickness.
Description
- This application claims the priority of Korean Patent Application No. 2003-80539 filed on Nov. 14, 2003, in the Korean Intellectual Property Office, which is herein incorporated by reference.
- 1. Field of the Invention
- The present invention relates to a super-thin, organic, light-emitting display (OLED) having a super thin glass substrate and a method for manufacturing the same.
- 2. Description of the Related Art
- Planarized display devices, such as an OLED or a thin film transistor liquid crystal display (TFT-LCD), can be formed in super thin and flexible structures. A super thin and flexible planarized display device may be produced using a flexible substrate, typically formed of a synthesized resin. However, the thickness of the substrate is maintained in a conventional thickness range because there is significant risk that the synthesized substrate, or thin film layers formed on it, will be deformed during the complicated manufacturing processes.
- Conventional flexible planarized display devices typically bind a highly flexible substrate to a transparent substrate using organic thin films. One thin film is formed on one substrate, another on the other substrate. The two films are then aligned, placed in contact with each other, and sealed to bond the films together. A significant disadvantage associated with producing OLEDs in this manner is that aligning the organic thin films is difficult, not only because the thin films are manufactured separately, but also because it is nearly impossible to tightly adhere thin films that have the same or a similar predetermined pattern.
- Various conventional solutions have been proposed, but in each the thickness of the substrate is maintained in a conventional range, which typically exceeds 0.5 mm, because the substrate must have a predetermined strength and temperature resistance to withstand the complicated processes used to from a thin film layers (at least one or more of which may be an organic film) on the substrate. Glass materials have been used to form conventional OLED substrates, but the thickness of these substrates could not be reduced to less than 0.5 mm, due to the fabrication constraints described above.
- The present invention provides a flat panel display that includes a glass substrate, an organic light-emitting part, and a sealing part. The organic light-emitting part includes one or more organic light-emitting devices (OLED) formed on a surface of the glass substrate, which has a thickness of about 0.05 mm to about 0.5 mm. The sealing part seals the organic light-emitting part and protects it from damage during the manufacturing process. A method for manufacturing the flat panel display comprises preparing a glass substrate of approximately 0.7 mm thickness or greater; forming a plurality of organic light-emitting devices on a surface of the substrate, wherein the organic light-emitting part comprises a grouping of one or more of the plurality of organic light-emitting devices; sealing each organic light-emitting part; and etching the glass substrate to a predetermined thickness.
- In another embodiment, the OLED includes a glass substrate of approximately 0.05 mm to approximately 0.5 mm thickness, an organic light emission layer in contact with a surface of the glass substrate, and a sealing part to seal the organic light emission layer. A first electrode is formed on one side of the organic light emission layer, and a second electrode is formed on a second side of the organic light emission layer. The sealing part is a stacked film which includes at least a barrier layer and a polymer layer. The flat panel display may further include a circular polarized film attached to an outer surface of the sealing part.
- An embodiment of a flat panel display having front and back viewing areas on which the same or different pictures can be displayed substantially simultaneously, together with various methods of manufacture, are also disclosed.
-
FIG. 1 is a cross-sectional view of an OLED configured in accordance with an embodiment of the present invention. -
FIG. 2 is a cross-sectional view of a sealing part shown inFIG. 1 . -
FIG. 3 is a cross-sectional view of an example of an OLED light-emitting part is shown inFIG. 1 . -
FIG. 4 is a cross-sectional view of another example of the OLED light-emitting part inFIG. 1 . -
FIGS. 5A, 5B , 5C, 5D, 5E and 5F are cross-sectional views illustrating a method of manufacturing the OLED ofFIG. 1 . -
FIGS. 6 and 7 are cross-sectional views illustrating different embodiments of the manufacturing steps described with reference toFIG. 5D . -
FIG. 8 is a cross-sectional view of an OLED configured in accordance with an embodiment of the present invention. -
FIG. 9 is a cross-sectional view of an OLED configured in accordance with yet another embodiment of the present invention. -
FIG. 1 is a cross-sectional view of an OLED configured in accordance with an embodiment of the present invention. - Referring to
FIG. 1 , the organic light-emitting device (OLED) includes atransparent glass substrate 1, an organic light-emittingpart 2, and a sealingpart 3 that seals the organic light-emittingpart 2. - In one embodiment of the present invention, the sealing
part 3 can include at least a barrier layer and at least a polymer layer. However, as seen inFIG. 2 , the sealingpart 3 can also include a polymer layer 32 inserted between abarrier layers 31 and 33. - The
barrier layers 31 and 33 that constitute a sealingpart 3 can be formed of a transparent blocking material, but are not necessarily limited thereto. The barrier layer can be formed of a material selected from a metal oxide, a metal nitride, a metal carbide, a metal oxynitride, and a compound of these materials. The metal oxide can be an oxide selected from silica, alumina, titania, indium oxide, tin oxide, indium tin oxide, and a compound of these materials. The metal nitride can be an aluminum nitride, a silicon nitride, and a compound of these materials. The metal carbide can be a silicon carbide, and the metal oxynitride can be a silicon oxynitride. Other inorganic materials, such as silicon, that block penetration of moisture or oxygen can also be used as material for the barrier layer. - These barrier layers can be formed using a chemical or vacuum deposition method. However, when a barrier layer is formed using a vacuum deposition method, pores in the barrier layer can grow. To prevent pores from growing, a polymer layer may be formed on the barrier layer. The polymer layer may be formed of a polymer selected from an organic polymer, an inorganic polymer, an organometallic polymer, and a hybrid organic/inorganic polymer.
- It is understood that the sealing
part 3 can be formed in a variety of forms other than the structure described above, including a super thin sealingpart 3 formed in thin films. Other thin films that from a sealing part in a super thin structure may also include a polymer layer and a barrier layer, as described above. - The organic light-emitting
part 2 includes an organic light-emitting device, and can be a region for defining a predetermined image. In an exemplary embodiment, the organic light-emitting device is a pixel. The organic light-emitting device can be either a passive matrix organic light-emitting device (PMOLED) or an active matrix organic light-emitting device (AMOLED) having a thin film transistor. -
FIG. 3 shows an example of a PMOLED. The PMOLED includes aglass substrate 1, a stripe-patternedfirst electrode layer 21 formed on theglass substrate 1, as well as anorganic layer 23 and asecond electrode layer 24 sequentially formed on thefirst electrode layer 21. In another embodiment, an insulating layer 22 can further be formed between each pattern line of thefirst electrode layer 21. Similarly, thesecond electrode layer 24 can be formed in a pattern substantially orthogonal to the pattern of the first electrode layer 22. Theorganic layer 23 can be formed of a polymer or non-polymer organic layer. - When using a non-polymer organic layer, the
organic layer 23 can be single-layered or multi-layered. An exemplary multi-layeredorganic layer 23 includes a Hole Injection Layer (HIL), a Hole Transport Layer (HTL), an Emission Layer (EML), an Electron Transport Layer (ETL), and an Electron Injection Layer (EIL). Organic materials that may be used are copper phthalocyanine (CuPc), N,N′-Di(naphthalene-1-yl)-N,N′-diphenyl-benzidine (NPB), or tris-8-hydroxyquinoline aluminum (Alq3), but are not limited thereto. The non-polymer organic layer can also be formed using a vacuum deposition method. - When using a polymeric organic layer, the
organic layer 23 can be formed of a HTL and an EML. In this case, the HTL can be formed of PEDOT (poly(3,4-ethylenedioxythiophene), and the EML can be formed of a Poly-Phenylenevinylene (PPV) and Polyfluorene. A screen printing method or an ink jet printing method can be used for forming these layers. - In one embodiment, the
first electrode layer 21 performs as an anode, and thesecond electrode layer 24 performs as a cathode. Naturally, the function of these electrodes can be reversed. - In one embodiment, the organic light-emitting device is a rearward light-emitting device. In such a case, the
first electrode layer 21 is an electrode formed of a transparent conductive material such as, but not limited to, indium tin oxide (ITO). When the organic light-emitting device is a frontal light-emitting device, thesecond electrode layer 24 is formed by depositing ITO, or similar transparent conductive material, on a semi-transparent thin film made of Magnesium-Silver (Mg—Ag) or similar metal or metal alloy. -
FIG. 4 shows an example of an AMOLED. At this point, it should be noted that the pixels of the organic light-emittingpart 2 ofFIG. 1 , have the same thin film transistor (TFT) structure and electrode (EL) device (OLED), as depicted inFIG. 4 . The TFT configuration ofFIG. 4 , however, is not necessarily limited to that shown, but may vary depending on the embodiment. - Referring again to
FIG. 4 , abuffer layer 11 formed of SiO2 is formed on aglass substrate 1, and a TFT is formed on thebuffer layer 11. - The TFT has an
active layer 12 formed on thebuffer layer 11, agate insulating film 13 formed on theactive layer 12, and agate electrode 14 formed on thegate insulating film 13. - The
active layer 12 can be formed of an amorphous silicon thin film or polycrystalline silicon thin film. Theactive layer 12 has a source region and a drain region heavily doped with an n-type or a p-type dopant, respectively. - A
gate insulating film 13 is formed on theactive layer 12, and agate electrode 14 formed of a conductive film made of MoW or aluminum/ copper (Al/Cu) is formed on a predetermined region on thegate insulating film 13. Thegate electrode 14 is connected to a gate line that applies an on/off signal to the TFT. The region for forming thegate electrode 14 corresponds to a region for forming a channel region of theactive layer 12. - An
interinsulating layer 15 is formed on thegate electrode 12, and asource electrode 16 and adrain electrode 17 are respectively connected through contact holes to the source region and the drain region formed on theactive layer 12. - A
passivation film 18 formed of SiO2 covers thesource electrode 16 and thedrain electrode 17, and aplanarized film 19 formed of acryl or polyimide is formed on thepassivation film 18. Theplanarized film 19 covers a portion of alower electrode 21. As shown, theplanarized film 19 includes a opening therein, which serves as a via. Alower electrode 21 forms the bottom of the opening. Anorganic emission layer 23 is formed within the opening in contact with surfaces of theplanarized film 19 which from a sides of the opening, and in contact with an upper surface of thelower electrode 21. Anupper electrode 24 is formed on a surface of theplanarization film 19 and theorganic emission layer 21. The TFT is connected to at least a capacitor (not shown) and to a power source. Thedrain electrode 17 is connected to the first electrode layer (lower electrode) 21 which, in this embodiment, is an anode of the OLED. - In use, variable current passing between the
lower electrode 21 and theupper electrode 24 energizes theorganic emission layer 23, causing it to emit various wavelengths (and colors) of light in approximate proportion to the amount of current received. In one embodiment, theorganic emission layer 23 can emit one of a red (R), green (G), or blue (B) color to display predetermined image information. - As shown in
FIG. 4 , the first electrode layer (lower electrode) 21 is connected to thedrain electrode 17 of the TFT and receives a positive power source therefrom. The second electrode layer (upper electrode) 24 covers whole pixels and supplies a negative power source. Theorganic layer 23, which emits light in response to current supplied thereto, is disposed between thefirst electrode 21 andsecond electrode 24. - The
first electrode layer 21 can be formed of a transparent conductive material such as, but not limited to indium tin oxide (ITO). If the OLED is a rear light-emitting device, thesecond electrode layer 24 can be formed such that it emits light toward theglass substrate 1. In such an embodiment, thesecond electrode layer 24 can be formed by depositing Al/LiF on the entire surface. - If the OLED is a front light-emitting device, the
layer 24 can be formed by depositing indium tin oxide (ITO) on a semi-transparent thin film formed of Magnesium-Silver (Mg—Ag). Thesecond electrode layer 24 need not necessarily be formed by depositing its formation material on the entire surface of the substrate or a layer thereof, but rather can be formed in variety of patterns. As mentioned previously, thefirst electrode layer 21 and thesecond electrode layer 24 can be configured to have reverse positions and functions. - As shown in
FIG. 1 , an OLED configured in accordance with an embodiment of the present invention has a thickness of approximately 0.05 mm to approximately 0.5 mm. Because aglass substrate 1 of this approximate thickness is super-thin, there is a risk that deformation of thesubstrate 1 will occur if the conventional manufacturing processes described above are used. To prevent or reduce deformation, an embodiment of the present invention uses an etching process to from aglass substrate 1 to a super-thin thickness of approximately 0.05 mm to approximately 0.5 mm. - Hereinafter, a method for manufacturing the OLED according to one embodiment of the present invention will be described.
- Referring to
FIG. 5A , atransparent glass substrate 10 is prepared. The thickness T of thetransparent glass substrate 10 is sufficiently thick so that thetransparent glass substrate 10 has sufficient structural strength to prevent pattern or reduce deformation of the organic light-emitting part during image formation and to prevent or reduce damages or defects during the manufacturing process. In one embodiment of the present information, the thickness T of thetransparent glass substrate 10 can be more than 0.7 mm. - Referring to
FIG. 5B , a plurality of organic light-emittingparts 2 are formed on thetransparent glass substrate 10. The organic light-emittingparts 2 are identical in configuration and function as the organic light-emittingparts 2 described with reference toFIGS. 1, 2 , 3 and 4. - Referring to FIG. SC, the organic light-emitting
parts 2 are sealed by sealingparts 3. The sealingparts 3 can be formed in the thin films as described above. - After forming the sealing
parts 3, the plurality of organic light-emittingparts 2 are sealed by a sealing glass 50 (FIG. 5D ). Then a sealingmaterial 51 is applied on edges of the organic light-emitting part region, and the sealingglass 50 is bonded to the sealingmaterial 51. In this manner, thetransparent glass substrate 10 and the sealingglass 50 are bonded and sealed on the edge regions by the sealingmaterial 51. - Referring to
FIG. 5E , after sealing thetransparent glass substrate 10, the product is immersed in abasin 52 which contains apredetermined etching solution 53. The etching solution can be fluoric acid, hydrochloric acid, or similar etching material. Over time, the etching solution reduces the thickness T of thetransparent glass substrate 10 to a value of approximately 0.05 mm approximately 0.5 mm. - Referring to
FIG. 5F , upon completing the etching of thetransparent glass substrate 10, the sealingglass 50 and theglass substrate 10 are simultaneously, or nearly simultaneously, cut at predetermined cutting points, which may vary, depending on how the organic light-emittingparts 2 were first positioned. Once the sealed edges are cut away, the sealing glass easily separates from each organic light-emittingpart 2. Thereafter, the sealed edges and pieces of cut sealing glass can be discarded or recycled. In this manner, the organic light-emitting parts can be readily obtained without using an additional separation process because the sealingglass 50 is not bonded to each organic light-emittingpart 2, but only to the edges of each region. The result of this manufacturing process is that one or more organic light-emittingdevices 2 are produced, each having asuper-thin glass substrate 1 which has a thickness of approximately 0.05 mm to approximately 0.5 mm. InFIG. 5F , each piece represents the OLED shown inFIG. 1 . - Referring to
FIG. 6 , a sealingfilm 54 can be used instead of the sealingglass 50. In this case, the same result as above is obtained. The sealingfilm 54 is formed of a material or materials that are insoluble and impermeable to theetching solution 53. - Referring to
FIG. 7 , thetransparent glass 10 can be sealed with a resin material 55. In this case, an additional process for removing the sealing resin material 55 after etching is required. -
FIG. 8 is a cross-sectional view of an OLED configured in accordance with another exemplary embodiment of the present invention. In this embodiment, the basic structure of the OLED ofFIG. 8 is the same structure of the OLED described with reference toFIGS. 1, 2 , 3 and 4. - The exemplary methods of manufacture described above can be applied to a frontal light emission OLED, that is, an OLED where the light is emitted toward the sealing
part 3. To strengthen a sealingpart 3, a circularpolarized film 6 can be attached on an outer surface of the sealingpart 3 to not only block external light from reaching the organic light-emitting devices, but also to give thesealing part 3 an increased predetermined strength. Alternatively, the strength of the sealingpart 3 can be increased by attaching a glass substrate or film having a thickness of approximately 0.05 mm to approximately 0.3 mm to the sealingpart 3. - In
FIG. 9 , an OLED configured in accordance with another exemplary embodiment of the present invention is depicted. This is a double-sided OLED formed by combining two OLEDs configured as described above. - The OLED depicted in
FIG. 9 includes afirst OLED 40 and asecond OLED 40′. Thefirst OLED 40 includes adisplay region 4 and aterminal region 8 having an organic light-emitting device formed on theglass substrate 1. Thedisplay region 4 is sealed by a sealingpart 3. In this example, thedisplay region 4 can be considered as a corresponding part to the organic light-emittingpart 2 inFIG. 1 , but is not limited thereto. The sealing part in this figure is identical to the sealingpart 3 previously mentioned. - The
terminal region 8 is not sealed by the sealingpart 3 but is exposed to the outside. As seen inFIG. 9 , connectingparts 9 such as chip on glass (COG) or flexible printed circuit (FPC) for connecting the external electronic devices are connected to theterminal region 8. Thesecond OLED 40′ has the same structure as thefirst OLED 40, therefore, a detailed description thereof will be omitted. - The sealing
parts second OLEDs glass substrates terminal regions terminal regions parts - When manufacturing the double sided OLED, the circular
polarized films FIG. 8 , can be applied on each external surface of thesubstrates parts substrate parts - As shown, described, and claimed herein, embodiments of the present invention permit a super-thin OLED to be manufactured to have a super-thin glass substrate that is not damaged during the manufacturing process. Moreover, adding a circularly polarized film to an outer surface of a sealing part increases the strength of a super thin OLED and blocks light from reaching and interfering with the organic light-emitting devices.
- While this invention has been particularly shown and described with reference to preferred embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the present invention as defined by the appended claims.
Claims (26)
1. A flat panel display, comprising:
a glass substrate;
an organic light-emitting part, the organic light-emitting part including one or more organic light-emitting devices formed on a surface of the glass substrate; and
a sealing part sealing the organic light-emitting part,
wherein the glass substrate has a thickness of about 0.05 mm to about 0.5 mm.
2. The flat panel display of claim 1 , wherein each of the one or more organic light-emitting devices comprises:
a first electrode layer formed of at least one transparent conductive material;
an organic light-emitting layer contacting a portion of the first electrode layer; and
a second electrode layer having a portion contacting a portion of the organic light-emitting layer.
3. The flat panel display of claim 1 , wherein each of the one or more organic light-emitting devices comprises:
a first electrode layer;
an organic light-emitting layer contacting a portion of the first electrode layer; and
a second electrode layer formed of at least one transparent conductive material having a portion thereof contacting a portion of the organic light-emitting layer.
4. The flat panel display of claim 1 , further comprising:
one of a circular polarized film, a glass substrate with a thickness of about 0.05 mm to about 0.5 mm, and a film formed on an outer surface of the sealing part.
5. The flat panel display of claim 1 , wherein the sealing part is a stacked film that includes at least one of a barrier layer and a polymer layer.
6. The flat panel display of claim 5 , wherein the barrier layer is formed at least of a material selected from a group consisting of silicon, metal oxide, metal nitride, metal carbide, metal oxynitride, and a compound of these materials.
7. The flat panel display of claim 5 , wherein the polymer layer is formed at least of a material selected from a group consisting of an organic polymer, an inorganic polymer, an organometallic polymer, and a hybrid organic/inorganic polymer.
8. The flat panel display claim 1 . Wherein the sealing part is a resin layer that encapsulates the organic light-emitting part.
9. A flat panel display, comprising:
a plurality of first organic light-emitting devices formed on a surface of a substrate, which is about 0.05 mm to about 0.5 mm thick;
a display region that includes one or more of the plurality of first organic light-emitting devices;
a sealing part that seals the display region; and
a terminal region exposed on an edge of the substrate.
10. The flat panel display of claim 9 , further comprising:
a second organic light-emitting device which comprises:
a plurality of second organic light-emitting devices formed on a surface of a second substrate, which has a thickness of about 0.05 mm to about 0.5 mm;
a second display region that includes one or more of the plurality of second organic light-emitting devices;
a second sealing part that seals the second display region; and
a second terminal region exposed on an edge of the second substrate,
wherein the sealing parts of the first organic light-emitting device and the second organic light-emitting device are bonded together, and
wherein the terminal regions of the first organic light-emitting device and the second organic light-emitting device face in opposite directions.
11. The flat panel display of claim 9 , wherein the sealing part and the second sealing part are stacked films, each of which include at least one of a barrier layer and a polymer layer.
12. The flat panel display of claim 11 , wherein the barrier layer is formed at least one of a material selected from a group consisting of silicon, metal oxide, metal nitride, metal carbide, metal oxynitride, and a compound of these materials.
13. The flat panel display of claim 11 , wherein the polymer layer is formed at least one of a material selected from a group consisting of organic polymer, inorganic polymer, organometallic polymer, and hybrid organic/inorganic polymer.
14. The flat panel display of claim 9 , wherein a circular polarized film is attached to at least an outer surface of each of the sealing part and the second sealing part.
15. A method for manufacturing a flat panel display, comprising:
forming a plurality of organic light-emitting devices on a surface of a glass substrate, wherein an organic light-emitting part comprises a grouping of one or more of the plurality of organic light-emitting devices;
sealing each organic light-emitting part; and etching the glass substrate to a predetermined thickness; and
etching the glass substrate.
16. The method for claim 15 , wherein sealing each light-emitting part further comprises:
applying a sealing material to edges of each organic light-emitting part; and
bonding a sealing glass substrate to the sealing material to thereby encapsulate each organic light-emitting part.
17. The method for claim 15 , wherein sealing each organic light-emitting part further comprises:
sealing each organic light-emitting part using a sealing film.
18. The method for claim 15 , wherein sealing each organic light-emitting part further comprises:
sealing each organic light-emitting part using a resin material.
19. The method for claim 18 , further comprising:
removing the resin material after etching the glass substrate.
20. The method for claim 15 , wherein sealing each organic light-emitting part, further comprises:
depositing about each organic light-emitting part, a barrier layer to seal each organic light-emitting part; and
forming at least a polymer layer on the barrier layer.
21. The method for claim 20 , wherein the barrier layer is formed at least one of a material selected from the group consisting of silicon, metal oxide, metal nitride, metal carbide, metal oxynitride, and a compound of these materials.
22. The method for claim 20 , wherein the polymer layer is formed at least of a material selected from a group consisting of an organic polymer, an inorganic polymer, an organometallic polymer, and a hybrid organic/inorganic polymer.
23. The method for claim 15 , wherein the glass substrate is etched to a thickness of about 0.05 mm to about 0.5 mm.
24. The method for claim 23 , further comprising:
cutting the glass substrate and the sealing glass substrate at pre-determined cut points.
25. A method for forming a flat panel display, comprising:
unsealing an organic light-emitting part enclosed by a sealing glass substrate bonded to a sealing material, the organic light-emitting part including one or more organic light-emitting devices formed on a surface of a glass substrate, the glass substrate having a thickness of about 0.05 mm to about 0.5 mm.
26. The method for claim 25 , wherein unsealing an organic light-emitting part further comprises:
cutting the glass substrate and the sealing glass substrate at pre-determined cut points.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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US11/745,815 US7828618B2 (en) | 2003-11-14 | 2007-05-08 | Super-thin OLED and method for manufacturing the same |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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KR1020030080539A KR100563057B1 (en) | 2003-11-14 | 2003-11-14 | Super-thin OLED and manufacturing method thereof |
KR2003-80539 | 2003-11-14 |
Related Child Applications (1)
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US11/745,815 Division US7828618B2 (en) | 2003-11-14 | 2007-05-08 | Super-thin OLED and method for manufacturing the same |
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EP (1) | EP1531502B1 (en) |
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Also Published As
Publication number | Publication date |
---|---|
CN1617641A (en) | 2005-05-18 |
JP2005150076A (en) | 2005-06-09 |
KR20050046922A (en) | 2005-05-19 |
CN1617641B (en) | 2010-09-08 |
US20070207696A1 (en) | 2007-09-06 |
EP1531502B1 (en) | 2014-02-26 |
JP4391301B2 (en) | 2009-12-24 |
KR100563057B1 (en) | 2006-03-24 |
EP1531502A2 (en) | 2005-05-18 |
US7828618B2 (en) | 2010-11-09 |
EP1531502A3 (en) | 2007-08-01 |
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