US20040149356A1 - Oxygen-enriched niobium wire - Google Patents
Oxygen-enriched niobium wire Download PDFInfo
- Publication number
- US20040149356A1 US20040149356A1 US10/759,692 US75969204A US2004149356A1 US 20040149356 A1 US20040149356 A1 US 20040149356A1 US 75969204 A US75969204 A US 75969204A US 2004149356 A1 US2004149356 A1 US 2004149356A1
- Authority
- US
- United States
- Prior art keywords
- niobium
- oxygen
- original
- wire
- accordance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
- C22C27/02—Alloys based on vanadium, niobium, or tantalum
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
- C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
- C23C8/10—Oxidising
Definitions
- the invention concerns a novel niobium wire, a process for producing it, and its use for connection to niobium or niobium oxide capacitors.
- Wires made of refractory metals are used for the electrical connection of metal powder capacitors. Tantalum wires are generally used for this purpose. This has the disadvantage of a relatively high sintering temperature. As a result, the surface of the powder anode cannot be completely used, because the powder partially sinters together. Furthermore, the use of tantalum wires with niobium and niobium oxide capacitors results in non-recyclable waste. Moreover, the price of tantalum is subject to considerable speculation, so that the costs for the raw material are difficult to calculate and control.
- Niobium wires have already been recommended for the connection of powder anodes.
- U.S. Pat. No. 6,358,625 B1 describes anode wires made of niobium or tantalum, which, to improve adhesion, are treated with oxygen in such a way that surface enrichment on the order of 35 atom % in a thickness of about 50 nm is obtained.
- Niobium and tantalum wires normally contain only small amounts of oxygen. Oxygen concentrations of 50-300 ⁇ g/g are specified for tantalum. The surface enrichment does not affect the general properties, such as conductivity, but increases adhesion. Sintering temperatures around 1,250° C. are specified.
- the object of the present invention is to provide thermally stable niobium wires in the range of 1,200 to 1,400° C.
- niobium wire that is highly enriched with oxygen.
- the oxygen concentration is preferably about 3,000 to 30,000 ⁇ g/g.
- the wires are suitable for connection especially to niobium or niobium oxide capacitors.
- the production process involves loading the niobium with oxygen by diffusion processes at elevated temperatures of preferably 600 to about 800° C. and pressures below 5 mbars. This is usually done in an oxygen-containing atmosphere, e.g., in pure oxygen or oxygen-containing gas mixtures, such as air.
- the alloy can be worked at room temperature into wire 0.2-0.4 mm in diameter.
- the wires are preferably used as lead wires in niobium or niobium oxide capacitors.
- Capacitors of this type are produced from metallic niobium powder in the same way that tantalum capacitors are produced. After sintering (together with the wire), the metallic niobium is “formed,” i.e., anodically oxidized, on the surface to form an extremely thin dielectric Nb 2 O 5 layer.
- Niobium in the form of prewire is loaded with oxygen at temperatures of 600-800° C. and pressures below 5 mbars in such a way that, as a result of the simultaneously occurring diffusion processes, oxygen enrichment occurs with respect to the (wire) bulk. This results in a niobium alloy with oxygen concentrations of 3,000 to 30,000 ⁇ g/g. The niobium alloy produced in this way is drawn into wires 0.2-0.4 mm in diameter at room temperature.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Powder Metallurgy (AREA)
- Conductive Materials (AREA)
- Non-Insulated Conductors (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
A niobium wire, a process for producing it, and its use for connection to niobium or niobium oxide capacitors. The wire is enriched with oxygen and preferably has oxygen concentrations of about 3,000 to 30,000 μg/g.
Description
- The invention concerns a novel niobium wire, a process for producing it, and its use for connection to niobium or niobium oxide capacitors.
- Wires made of refractory metals are used for the electrical connection of metal powder capacitors. Tantalum wires are generally used for this purpose. This has the disadvantage of a relatively high sintering temperature. As a result, the surface of the powder anode cannot be completely used, because the powder partially sinters together. Furthermore, the use of tantalum wires with niobium and niobium oxide capacitors results in non-recyclable waste. Moreover, the price of tantalum is subject to considerable speculation, so that the costs for the raw material are difficult to calculate and control.
- Niobium wires have already been recommended for the connection of powder anodes. For example, U.S. Pat. No. 6,358,625 B1 describes anode wires made of niobium or tantalum, which, to improve adhesion, are treated with oxygen in such a way that surface enrichment on the order of 35 atom % in a thickness of about 50 nm is obtained. Niobium and tantalum wires normally contain only small amounts of oxygen. Oxygen concentrations of 50-300 μg/g are specified for tantalum. The surface enrichment does not affect the general properties, such as conductivity, but increases adhesion. Sintering temperatures around 1,250° C. are specified.
- The object of the present invention is to provide thermally stable niobium wires in the range of 1,200 to 1,400° C.
- This object is achieved by niobium wire that is highly enriched with oxygen. The oxygen concentration is preferably about 3,000 to 30,000 μg/g. The wires are suitable for connection especially to niobium or niobium oxide capacitors.
- It is assumed that the interstitial impurities reduce the lattice mobility and block the grain boundaries in such a way that coarse grain development at the sintering temperature of the powder anodes is reduced.
- The production process involves loading the niobium with oxygen by diffusion processes at elevated temperatures of preferably 600 to about 800° C. and pressures below 5 mbars. This is usually done in an oxygen-containing atmosphere, e.g., in pure oxygen or oxygen-containing gas mixtures, such as air. This yields a temperature-stabilized niobium alloy, which at 1,200-1,400° C. has no appreciable vapor pressure of metals that can have a negative effect on the stability (dielectric) of the Nb2O5 layer by being deposited on the anode bodies. The alloy can be worked at room temperature into wire 0.2-0.4 mm in diameter.
- The wires are preferably used as lead wires in niobium or niobium oxide capacitors. Capacitors of this type are produced from metallic niobium powder in the same way that tantalum capacitors are produced. After sintering (together with the wire), the metallic niobium is “formed,” i.e., anodically oxidized, on the surface to form an extremely thin dielectric Nb2O5 layer.
- The following example explains the invention in greater detail without limiting it.
- Niobium in the form of prewire is loaded with oxygen at temperatures of 600-800° C. and pressures below 5 mbars in such a way that, as a result of the simultaneously occurring diffusion processes, oxygen enrichment occurs with respect to the (wire) bulk. This results in a niobium alloy with oxygen concentrations of 3,000 to 30,000 μg/g. The niobium alloy produced in this way is drawn into wires 0.2-0.4 mm in diameter at room temperature.
- While the oxygen-enriched niobium wire has been described in conjunction with specific embodiments, it is evident that many alternatives, modifications and variations will be apparent to those skilled in the art in light of the disclosure herein. It is intended that the meets and bounds of the invention be determined by the appended claims rather than by the language of the above specification, and that all such alternatives, modifications and variations which form a function or co-jointly or cooperative equivalent are intended to be included within the spirit and scope of these claims.
Claims (9)
1. (Original) A niobium wire that it is enriched with oxygen.
2. (Original) A niobium wire in accordance with claim 1 , wherein the oxygen is in a concentration of about 3,000 to 30,000 μg/g.
3. (Original) A process for producing oxygen-enriched niobium wire, comprising the steps of: treating niobium in an oxygen-containing atmosphere in a closed chamber at elevated temperature; and drawing the niobium treated in this way into wire.
4. (Original) A process in accordance with claim 3 , wherein the treating step is carried out in an atmosphere of air.
5. (Original) A process in accordance with claim 3 , wherein the drawing step includes drawing the niobium into wire having a diameter of 0.2-0.4 mm.
6. (Original) A process in accordance with claim 3 , wherein the treating step is carried out at temperatures of 600-800° C.
7. (Original) A process in accordance with claim 3 , wherein the treating step is carried out at pressures below 5 mbars.
8. (Original) A process in accordance with claim 3 , wherein the drawing step is carried out at room temperature.
9. (Original) Use of oxygen-enriched niobium wire for connection to niobium or niobium oxide capacitors.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/528,110 US8262813B2 (en) | 2003-02-05 | 2006-09-27 | Oxygen-enriched niobium wire |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10304756A DE10304756B4 (en) | 2003-02-05 | 2003-02-05 | Oxygenated niobium wire |
DE10304756.5 | 2003-02-05 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/528,110 Division US8262813B2 (en) | 2003-02-05 | 2006-09-27 | Oxygen-enriched niobium wire |
Publications (1)
Publication Number | Publication Date |
---|---|
US20040149356A1 true US20040149356A1 (en) | 2004-08-05 |
Family
ID=32747579
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/759,692 Abandoned US20040149356A1 (en) | 2003-02-05 | 2004-01-16 | Oxygen-enriched niobium wire |
US11/528,110 Expired - Fee Related US8262813B2 (en) | 2003-02-05 | 2006-09-27 | Oxygen-enriched niobium wire |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/528,110 Expired - Fee Related US8262813B2 (en) | 2003-02-05 | 2006-09-27 | Oxygen-enriched niobium wire |
Country Status (5)
Country | Link |
---|---|
US (2) | US20040149356A1 (en) |
JP (1) | JP4638675B2 (en) |
CN (1) | CN1328404C (en) |
AT (1) | AT413384B (en) |
DE (1) | DE10304756B4 (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005037468A2 (en) * | 2003-10-17 | 2005-04-28 | W.C. Heraeus Gmbh | Oxygen-enriched refractive metal alloy for use in medicine |
US20050199321A1 (en) * | 2004-03-04 | 2005-09-15 | W.C. Heraeus Gmbh | High temperature-resistant niobium wire |
US20070017611A1 (en) * | 2003-02-05 | 2007-01-25 | Bernd Spaniol | Oxygen-enriched niobium wire |
US20080254269A1 (en) * | 2007-04-13 | 2008-10-16 | Yuri Freeman | NbO Capacitors With Improved Performance And Higher Working Voltages |
US20080266755A1 (en) * | 2007-04-13 | 2008-10-30 | Yuri Freeman | NbO Capacitors With Improved Performance and Higher Working Voltages |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102005038551B3 (en) * | 2005-08-12 | 2007-04-05 | W.C. Heraeus Gmbh | Wire and frame for single-ended lamps based on niobium or tantalum, as well as manufacturing process and use |
CN106917023B (en) * | 2017-03-21 | 2019-05-24 | 西安交通大学 | A kind of metal material of good mechanical performance and preparation method thereof |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6165623A (en) * | 1996-11-07 | 2000-12-26 | Cabot Corporation | Niobium powders and niobium electrolytic capacitors |
US6358625B1 (en) * | 1999-10-11 | 2002-03-19 | H. C. Starck, Inc. | Refractory metals with improved adhesion strength |
Family Cites Families (15)
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US2987352A (en) | 1958-02-10 | 1961-06-06 | Ca Atomic Energy Ltd | Zirconium bearings and process of producing same |
US4526629A (en) * | 1984-05-15 | 1985-07-02 | International Business Machines Corporation | Catalytic oxidation of solid materials |
DE3700659A1 (en) | 1986-01-29 | 1987-07-30 | Fansteel Inc | FINE-GRAINED PROBLEM TANTALO WIRE |
JPS6390315A (en) * | 1986-09-30 | 1988-04-21 | Seiko Electronic Components Ltd | Manufacture of extra fine wire |
US5242481A (en) | 1989-06-26 | 1993-09-07 | Cabot Corporation | Method of making powders and products of tantalum and niobium |
US5098485A (en) * | 1990-09-19 | 1992-03-24 | Evans Findings Company | Method of making electrically insulating metallic oxides electrically conductive |
JP3546451B2 (en) * | 1993-12-24 | 2004-07-28 | 昭和電工株式会社 | Method for manufacturing solid electrolytic capacitor |
US6585772B2 (en) | 1997-03-27 | 2003-07-01 | Smith & Nephew, Inc. | Method of surface oxidizing zirconium and zirconium alloys and resulting product |
JPH11264064A (en) * | 1998-03-18 | 1999-09-28 | Japan Energy Corp | Production of superconductive material and superconductive material obtained therefrom |
US6521173B2 (en) * | 1999-08-19 | 2003-02-18 | H.C. Starck, Inc. | Low oxygen refractory metal powder for powder metallurgy |
US6261337B1 (en) * | 1999-08-19 | 2001-07-17 | Prabhat Kumar | Low oxygen refractory metal powder for powder metallurgy |
US6545858B1 (en) * | 1999-11-30 | 2003-04-08 | Showa Denko K.K. | Capacitor |
WO2002098275A2 (en) | 2001-06-05 | 2002-12-12 | Applied Medical Resources Corporation | Surgicals metals with improved hardness and methods of making same |
DE10304756B4 (en) | 2003-02-05 | 2005-04-07 | W.C. Heraeus Gmbh | Oxygenated niobium wire |
DE102004032128B4 (en) | 2003-10-17 | 2010-10-14 | W.C. Heraeus Gmbh | Metallic material, method of manufacture and use |
-
2003
- 2003-02-05 DE DE10304756A patent/DE10304756B4/en not_active Expired - Fee Related
- 2003-12-11 AT AT0199703A patent/AT413384B/en not_active IP Right Cessation
-
2004
- 2004-01-16 US US10/759,692 patent/US20040149356A1/en not_active Abandoned
- 2004-01-20 CN CNB2004100027778A patent/CN1328404C/en not_active Expired - Fee Related
- 2004-02-04 JP JP2004028553A patent/JP4638675B2/en not_active Expired - Fee Related
-
2006
- 2006-09-27 US US11/528,110 patent/US8262813B2/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6165623A (en) * | 1996-11-07 | 2000-12-26 | Cabot Corporation | Niobium powders and niobium electrolytic capacitors |
US6358625B1 (en) * | 1999-10-11 | 2002-03-19 | H. C. Starck, Inc. | Refractory metals with improved adhesion strength |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070017611A1 (en) * | 2003-02-05 | 2007-01-25 | Bernd Spaniol | Oxygen-enriched niobium wire |
US8262813B2 (en) | 2003-02-05 | 2012-09-11 | Heraeus Materials Technology Gmbh & Co. Kg | Oxygen-enriched niobium wire |
WO2005037468A2 (en) * | 2003-10-17 | 2005-04-28 | W.C. Heraeus Gmbh | Oxygen-enriched refractive metal alloy for use in medicine |
US20060169364A1 (en) * | 2003-10-17 | 2006-08-03 | W.C. Heraeus Gmbh | Metallic material and methods of making and using same |
WO2005037468A3 (en) * | 2003-10-17 | 2007-03-08 | Heraeus Gmbh W C | Oxygen-enriched refractive metal alloy for use in medicine |
US8349248B2 (en) | 2003-10-17 | 2013-01-08 | Heraeus Precious Metals Gmbh & Co. Kg | Metallic material and methods of making and using same |
US20050199321A1 (en) * | 2004-03-04 | 2005-09-15 | W.C. Heraeus Gmbh | High temperature-resistant niobium wire |
US7704448B2 (en) | 2004-03-04 | 2010-04-27 | W.C. Heraeus Gmbh | High temperature-resistant niobium wire |
US20080254269A1 (en) * | 2007-04-13 | 2008-10-16 | Yuri Freeman | NbO Capacitors With Improved Performance And Higher Working Voltages |
US20080266755A1 (en) * | 2007-04-13 | 2008-10-30 | Yuri Freeman | NbO Capacitors With Improved Performance and Higher Working Voltages |
US8325465B2 (en) | 2007-04-13 | 2012-12-04 | Kemet Electronics Corporation | NbO capacitors with improved performance and higher working voltages |
Also Published As
Publication number | Publication date |
---|---|
AT413384B (en) | 2006-02-15 |
JP2004247299A (en) | 2004-09-02 |
CN1328404C (en) | 2007-07-25 |
DE10304756A1 (en) | 2004-11-25 |
JP4638675B2 (en) | 2011-02-23 |
DE10304756B4 (en) | 2005-04-07 |
US8262813B2 (en) | 2012-09-11 |
CN1519385A (en) | 2004-08-11 |
US20070017611A1 (en) | 2007-01-25 |
ATA19972003A (en) | 2005-07-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: W. C. HERAEUS GMBH & CO. KG, GERMANY Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:SPANIOL, BERND;REEL/FRAME:014907/0093 Effective date: 20040108 |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |