US20030145781A1 - Process and apparatus for producing a single crystal of semiconductor material - Google Patents

Process and apparatus for producing a single crystal of semiconductor material Download PDF

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Publication number
US20030145781A1
US20030145781A1 US10/350,570 US35057003A US2003145781A1 US 20030145781 A1 US20030145781 A1 US 20030145781A1 US 35057003 A US35057003 A US 35057003A US 2003145781 A1 US2003145781 A1 US 2003145781A1
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Prior art keywords
melt
vessel
granules
melting
single crystal
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Abandoned
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US10/350,570
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English (en)
Inventor
Wilfried von Ammon
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Siltronic AG
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Wacker Siltronic AG
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Assigned to WACKER SILTRONIC AG reassignment WACKER SILTRONIC AG ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: VON AMMON, WILFRIED, DR.
Publication of US20030145781A1 publication Critical patent/US20030145781A1/en
Assigned to SILTRONIC AG reassignment SILTRONIC AG CHANGE OF NAME (SEE DOCUMENT FOR DETAILS). Assignors: Wacker Siltronic Gesellschaft Fur Halbleitermaterialien Aktiengesellschaft
Priority to US12/242,080 priority Critical patent/US7655089B2/en
Priority to US12/640,755 priority patent/US8221550B2/en
Abandoned legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
    • C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/14—Crucibles or vessels
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1056—Seed pulling including details of precursor replenishment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]

Definitions

  • the present invention relates to a process for producing a single crystal of semiconductor material by means of a method which differs from the known zone pulling (Fz process) substantially because polycrystalline granules, instead of a polycrystalline stock ingot, supply the material for the growth of the single crystal.
  • the present invention also relates to an apparatus which is suitable for the production of the single crystal.
  • a process of the same general nature is already known from DE 19538020 A1.
  • the granules are melted in a vessel and fed to a melt which is located on the growing single crystal.
  • the growth of the single crystal is maintained by an equilibrium between molten granules fed to the melt and solidifying fractions of the melt.
  • the present invention provides a process for producing a single crystal of semiconductor material, in which fractions of a melt, which is kept in liquid form by a pulling coil, solidify on a seed crystal to form the growing single crystal, and granules are melted in order to maintain the growth of the single crystal, wherein the melting granules are passed to the melt after a delay.
  • the present invention also provides an apparatus for producing a single crystal, comprising a vessel which is arranged above the growing single crystal and a conveyor device for feeding granules into the vessel, and a melting coil for melting the granules, and a pulling coil for maintaining a melt on the growing single crystal, the melting granules passing through openings in the vessel and the pulling coil to the melt, so as to form a melt neck, and solidifying fractions of the melt maintaining the growth of the single crystal, wherein the vessel has a device which delays mixing of the molten granules with the melt.
  • the process of the invention makes it possible to produce single crystals with the characteristics of zone-pulled material at costs which are well below the costs of Fz material.
  • the polycrystalline granules which supply the raw material for the crystal growth are significantly less expensive than the polycrystalline stock ingots required for the Fz process.
  • polycrystalline stock ingots are rarely available in a quality and size which makes it possible to produce single crystals with diameters of 200 mm and above. Yet even if this were possible, the process for pulling single crystals with such diameters can only be controlled with difficulty. This is on account of the masses which have to be simultaneously melted and crystallized. The consequence is low yields of dislocation-free single crystals, which are not economically competitive.
  • High-frequency coils are in each case used to melt the granules and to pull the single crystal. It is particularly advantageous if the pulling coil and the melting coil are inductively decoupled. This means that the energy provided by the pulling coil is used to control the growth of the single crystal but not to melt the granules. Decoupling of this nature can be achieved simply by leaving sufficient distance between the pulling coil and the base of the vessel to which the granules are fed.
  • a melt is produced on a seed crystal in a similar manner to that which is also customary in the Fz process.
  • the volume of the melt which initially only comprises a molten drop, is increased as a result of the melting of the semiconductor material.
  • fractions of the melt are made to solidify, so as to form a growing single crystal, by slowly lowering the seed crystal with rotation.
  • the single crystal is allowed to grow into a cone. Later, the diameter of the single crystal is kept constant, with the result that most of the single crystal acquires a cylindrical appearance.
  • the semiconductor material which is required for the production of single crystals with diameters of 200 mm and above, in particular during the pulling of the cylindrical section, is supplied substantially by polycrystalline granules which are melted with the aid of the melting coil.
  • the melting granules are fed to the melt with a delay.
  • a gas stream consisting, for example, of inert gas, such as argon, to be fed from the bottom upward through the pulling coil during the production of the single crystal.
  • FIGS. 1 to 4 show preferred embodiments of the apparatus according to the invention.
  • FIG. 5 shows a plan view of a melting coil which is particularly suitable for use in an arrangement as shown in FIG. 4.
  • silicon is mentioned as a particularly preferred semiconductor material.
  • a pot-like vessel 1 which can rotate and can be displaced in the axial direction, positioned above a pulling coil 2 .
  • the vessel consists of SiO 2 , for example quartz, and, like the pulling coil, has a circular opening 3 in the center. Its interior is divided into a plurality of, preferably at least three, regions, which form a system of passages, by concentric quartz walls 4 .
  • the individual regions are connected to one another by openings 6 in such a way that the distance from the outer region to the central opening 3 is as long as possible and, for example, is in meandering form.
  • the coil turns are covered with covers 12 made from quartz in order to avoid contact between the granules and the metallic surface of the melting coil.
  • the quartz walls 4 are designed in such a way that the granules 11 supplied via a conveying device 10 cannot be scattered into the inner regions.
  • the ingot can rotate and can be displaced in both the radial and axial directions.
  • the axis of rotation of the vessel 1 is tilted through a small angle ⁇ , thus ensuring that the ingot is always wetted at the same place relative to the pulling coil 2 .
  • Radial displacement of the pulling coil makes it possible to control the way in which molten material runs out of a pool of melt 17 in the vessel 1 to the melt 8 .
  • the space in which the single crystal is pulled should as far as possible be separated in a dustproof manner from the space in which the vessel is located. It is therefore preferable for the sickle-shaped gap between the ingot 7 and the edge of the central opening 3 in the vessel to be as narrow as possible, and for a gas stream to be directed upward through the gap, making it difficult for dust to penetrate into the pulling space.
  • Production of a single crystal begins by first of all melting a small quantity of silicon in the vessel 1 and keeping it in liquid form. In this phase, the ingot 7 is not yet in contact with the pool of melt 17 which has been produced. Then, the ingot is moved downward through the central opening 3 in the vessel and the inner hole in the pulling coil. The seed pulling is commenced in a known way as a result of a molten droplet being produced on the lower tip of the ingot with the aid of the pulling coil 2 and a seed crystal being attached to this molten droplet. At this time, the ingot still has the function of the stock ingot used in the Fz process.
  • the extent of the axial displacement of the vessel 1 relative to the melting coil 5 regulates the extent to which the HF field of this coil is introduced into the molten granules.
  • the melting characteristics of the granules can be influenced in this way and also by the choice of the HF power. Displacement of the vessel relative to the pulling coil may also be advantageous for the control characteristics. If the distance from the pulling coil becomes great, energy is no longer introduced into the pool of molten granules from below, and silicon freezes at the bottom of the vessel.
  • the shape of the pulling coil is additionally modified in such a way that an upward bulge is formed integrally on the wetting side where the pulling coil adjoins the ingot which has been wetted with liquid silicon, at this location the locally higher introduction of energy means that no silicon freezes on the base of the vessel. Therefore, the molten granules can continue to run down to the melt without defects, while at the same time the direct contact surface between the molten granules and the base of the vessel consisting of SiO 2 is minimized by the layer of frozen silicon. This makes it possible to considerably reduce the introduction of oxygen into the melt and the formation of SiO.
  • the vessel 1 comprises a plate of silicon which in the center has a tubular opening 3 which is created by a section of pipe 13 which is drawn downward.
  • the plate is mounted rotatably, preferably on three wheels 14 which support the plate at the edge and also serve as a rotary drive.
  • the plate 1 and the integrally molded section of pipe 13 are protected against direct introduction of the HF field of the pulling coil 2 from below and from the side by a cooling device 15 .
  • Device 15 can be for example a water-cooled metal plate, so that melting of the lower side of the plate 1 and of the outer side of the section of pipe by the pulling coil is prevented.
  • the metal plate acts as a heat sink which dissipates the heat generated by the melting coil 5 in the plate.
  • the melting coil is arranged above the plate.
  • the central opening 3 in the plate and the inner side of the integrally molded section of pipe 13 are heated by an additional energy source, for example a radiation heating means, which is illustrated as a lens 16 for the purposes of simplification, in order to prevent freezing of the molten granules flowing to the melt and of the melt neck 18 which forms.
  • the thermal gradient which builds up in the plate and the integrally formed section of pipe ensures that a stable pool of melt 17 is formed on the top side of the plate and the inner side of the section of pipe remains in liquid form, while the base of the plate and the outer side of the integrally formed section of pipe remain in solid form.
  • the section of pipe 13 is completely closed off at the bottom by liquid silicon of the melt neck 18 .
  • Concentric quartz rings 4 which, as in the embodiment shown in FIG.
  • the embodiment shown in FIG. 2 has the advantage that the surface area of contact with quartz and therefore the introduction of oxygen into the melt 8 is reduced further, and that the melting of the granules 11 and the pulling of the single crystal are completely electromagnetically decoupled.
  • the pulling coil 2 can be optimized purely with a view to the pulling operation. Control also becomes more stable.
  • the inner molten surface of the melt neck 18 at the end of the section of pipe 13 acts as a barrier to individual granules which have not yet completely melted, since they float on the surface until they have melted. It is virtually impossible for such particles to reach the growth front of the single crystal and cause dislocations in the crystal lattice.
  • a further advantage is that the space holding the growing single crystal 9 can be very successfully sealed in a dustproof manner from the space holding the plate 1 , since the two spaces are only connected by a narrow annular gap between the metal plate 15 and the plate 1 .
  • the dustproof separation of the spaces can be improved even further by a protective shield 19 .
  • the production of a single crystal begins by first of all melting a closure at the lower end of the section of pipe and by a seed crystal being fitted and pulled into a cone in the manner which has already been described.
  • the closure used may be a piece of silicon which has been inserted into the section or pipe or the melt neck which solidified after the pulling of a previously produced single crystal. In this respect, the closure takes over the function of the ingot 7 shown in FIG. 1.
  • the upper sides of the plate 1 and the closure of the tubular central opening are melted with the aid of the melting coil 5 and the radiation heating means 16 , and further molten material is fed to the growing single crystal.
  • FIG. 3 which is similar to the apparatus shown in FIG. 2, quartz walls which are in contact with the pool of melt are completely dispensed with, so that there is no oxygen doping of the single crystal or formation of SiO.
  • the melting coil 5 in the region above the edge of the tubular opening, is designed in such a way that at that location an increase in height 20 is produced on the surface of the plate 1 , forming a barrier. If the melting coil is moved closer to the pool of melt or the HF power is increased, molten material is displaced by the repelling electromagnetic force and flows over the barrier into the tubular opening 3 .
  • the barrier acts as a filter which blocks solid semiconductor material.
  • the melting coil may be designed in such a way that a plurality of barriers in series are formed on the plate.
  • a single crystal is produced in a similar manner to the procedure which has already been described in connection with the embodiment shown in FIG. 2.
  • the melt is built up again at locations where molten material leaves the region of influence of the connecting piece.
  • the molten material which is situated on the plate between the separated turns of the melting coil bulges upward on account of the relatively weak electromagnetic force active there, and ultimately solidifies again.
  • a suitably shaped melting coil is illustrated in FIG. 5. It has a plurality of concentric turns 22 , the distances between the turns on the inner side being greater than the distances between the turns on the outer side.
  • the turns are connected to one another by connecting pieces 23 .
  • the hatched areas between the turns which lie further apart indicate the presence of webs 21 .
  • a single crystal is produced in a similar manner to the procedure which has already been described in connection with the embodiment shown in FIG. 2.
  • Silicon single crystals which have been produced using the process of the invention make it possible to produce semiconductor wafers with particularly advantageous defect properties.
  • the grown-in defects are smaller than 60 nm even at oxygen concentrations of 3-9*10 17 cm ⁇ 3 , preferably 4-8.5*10 17 cm ⁇ 3 , and particularly preferably 4.5-8*10 17 cm ⁇ 3 , and are therefore easy to eliminate by heat treatment at least in the regions where they could adversely affect electronic components.
  • the single crystals to be additionally doped with nitrogen.
  • a nitrogen concentration of 1*10 13 -6*10 15 , preferably 1*10 14 -4*10 15 is expedient.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
US10/350,570 2002-02-01 2003-01-24 Process and apparatus for producing a single crystal of semiconductor material Abandoned US20030145781A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/242,080 US7655089B2 (en) 2002-02-01 2008-09-30 Process and apparatus for producing a single crystal of semiconductor material
US12/640,755 US8221550B2 (en) 2002-02-01 2009-12-17 Process and apparatus for producing a single crystal of semiconductor material

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DE10204178.4 2002-02-01
DE10204178A DE10204178B4 (de) 2002-02-01 2002-02-01 Verfahren und Vorrichtung zum Herstellen eines Einkristalls aus Halbleitermaterial

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US12/640,755 Expired - Fee Related US8221550B2 (en) 2002-02-01 2009-12-17 Process and apparatus for producing a single crystal of semiconductor material

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US20090223949A1 (en) * 2008-03-10 2009-09-10 Siltronic Ag Induction Heating Coil and Method For Melting Granules Composed Of Semiconductor Material
US20100037815A1 (en) * 2008-08-13 2010-02-18 Siltronic Ag Method For Producing A Single Crystal Of Semiconductor Material
US20110095018A1 (en) * 2009-10-28 2011-04-28 Siltronic Ag Device For Producing A Single Crystal Composed Of Silicon By Remelting Granules
US20110107960A1 (en) * 2009-11-11 2011-05-12 Siltronic Ag Method For Producing A Single Crystal Composed Of Silicon By Remelting Granules
US20110185963A1 (en) * 2010-02-03 2011-08-04 Siltronic Ag Method For Producing A Single Crystal Composed Of Silicon Using Molten Granules
US8021483B2 (en) 2002-02-20 2011-09-20 Hemlock Semiconductor Corporation Flowable chips and methods for the preparation and use of same, and apparatus for use in the methods
US20130199440A1 (en) * 2010-04-13 2013-08-08 Schmid Silicon Technology Gmbh Monocrystalline semiconductor materials
EP2692908A1 (de) * 2012-07-30 2014-02-05 SolarWorld Industries America, Inc. Vorrichtung und Verfahren zur Herstellung von Staben
WO2014019789A1 (de) * 2012-07-31 2014-02-06 Siltronic Ag Verfahren zur herstellung eines einkristalls aus silizium
CN104962987A (zh) * 2015-07-01 2015-10-07 哈尔滨工业大学 一种水平定向区熔结晶制备法中的单晶生长炉用水平箱式发热体
CN104975340A (zh) * 2014-04-14 2015-10-14 硅电子股份公司 用于生产硅的单晶体的设备和方法
US20150354087A1 (en) * 2014-06-06 2015-12-10 Siltronic Ag Apparatus and process for producing a crystal of semiconductor material
US9410262B2 (en) * 2012-09-04 2016-08-09 Siltronic Ag Method for producing a silicon single crystal

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DE102010021004A1 (de) * 2010-05-14 2011-11-17 Schmid Silicon Technology Gmbh Herstellung von monokristallinen Halbleiterwerkstoffen
US9664448B2 (en) 2012-07-30 2017-05-30 Solar World Industries America Inc. Melting apparatus
CN109399637A (zh) * 2018-11-02 2019-03-01 大连理工大学 一种金刚线切割硅粉的高温非转移电弧造粒设备和方法

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