US2002221A - Dry rectifier - Google Patents

Dry rectifier Download PDF

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Publication number
US2002221A
US2002221A US534358A US53435831A US2002221A US 2002221 A US2002221 A US 2002221A US 534358 A US534358 A US 534358A US 53435831 A US53435831 A US 53435831A US 2002221 A US2002221 A US 2002221A
Authority
US
United States
Prior art keywords
layer
rectifier
layers
intermediate layer
sprayed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US534358A
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English (en)
Inventor
William Christiaan Van Geel
Emmens Hendrik
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of US2002221A publication Critical patent/US2002221A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/16—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H01L21/108—Provision of discrete insulating layers, i.e. non-genetic barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/12—Application of an electrode to the exposed surface of the selenium or tellurium after the selenium or tellurium has been applied to the foundation plate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S425/00—Plastic article or earthenware shaping or treating: apparatus
    • Y10S425/812—Venting

Definitions

  • this layer is formed by chemical agency or otherwise from substances of which the adjoining outside layers are made.
  • the invention is characterized in that the intermediate layer is formed independently of the material of the two outside layers. It has been found that thus a particularly satisfactory rectifying action is obtained and that such rectifiers can be manufactured more simply and cheaply than the-well known rectifiers of this type.
  • the intermediate layer is preferably made of a substance which does not form part per se or as a compound of the substances that constitute the two outside layers.
  • thelatter consists of a plate or strip of artificial resin, (for example of Bakelite), lacquer, collodium, silicious varnish or the like.
  • a simple method of manufacturing a rectifier according to the invention is by spraying the intermediate layer on either one of the two adjoining layers but other methods of manufacturing are also possible. .Lacquer, for example,
  • the intermediate layer is sprayed on a plate or strip which constitutes one of the outside layers and after that the second outside layer is sprayed on the intermediate layer.
  • a very compact rectifier is obtained in a very simple manner.
  • a rectifier consisting of a great number of cells may be built up entirely by successively spraying on each other a plurality of different layers in the manner indicated.
  • a metal of good emissive power is first sprayed on a solid substratum and upon this layer is sprayed an insulating layer upon which in its turn is sprayed a layer of a substance of low emissive power and upon this layer is sprayed a layer of the metal initially used, and so on.
  • any numberof cells can be combined 5 and arranged at will in series or in parallel by bringing out from the individual cells or group of cells the required connecting wires.
  • the cell shown therein consists of a copper plate I which has sprayed on it or is coated with a layer 2 of bakelite, and a plate 3 of compressed CuaS which is arranged so as to lie in contact with the latter.
  • a very simple. circuit arrangement is shown, it is,
  • the plates or layers may be, for example, centrally apertured and a bolt inserted through these apertures, this bolt also passing through two clamping plates provided on the two ends of the rectifiers.
  • a nut provided at one 30 end of the bolt the clamping plates force the cells against each other and a good electric and mechanical connection between same is established.
  • the cathode use may be made not only of the copper mentioned before but also of a great many other substances, for example, zirconium, titanium, hafnium, thorium.
  • a great many difierent materials may be used, for example, copper iodide which has added to it free iodine lead sulphide, molybdenum 5111- phide, tungsten sulphide, iron sulphide, iron hafnium, manganese oxide, silver chloride with free iodine, lead dioxide, cadmium oxide.
  • any non-conductor which is adapted to be applied in a thin layer is suitable.
  • those nonconductors will, preferably be used which are adapted to be spread or squirted in the form of a thin layer and which layer at the same time is non-porous and has sufiicient resistance to mechanical and atmospherical influences.
  • Adry rectifier cell having asymmetrical conductivity when cold and comprising two outside layers formed of substances having diiIerent electron emissivities, and a very thin intermediate layer of a non-conductive substance, said intermediate layer being formed independently of the substances of the two outside layers and-being substantially cold during'the operation of the cell.
  • a dry rectifier cell consisting'of two layers of substances having difierent electron emissivities, and an interposed thin layer consisting-oi an insulating material such as artificial resin, lacquer, collodion, silicious varnish or the like, said material being substantially cold and non-ionized during the operation of the cell.
  • a dry rectifier cell comprising two layers substances having different electron emissivities
  • a dry rectifier cell comprising two outside layers or substances having different electron emissivities, and a very thin interposed layer having high insulating properties and being sprayed on one of the said outside layers and formed independently of the substance of the outside layers, said interposed layer being substantially cold during the operation of the cell.
  • a dry rectifier cell comprising two' outside layers 01' substancesjhaving dverent electron emissivities, and a very thin intermediate layer sprayed on one of said outside layers, said intermediate layer remaining substantially cold during the operation of the cell and being of a compound, the positive part of which differs from the material of the two outside layers.
  • a dry rectifier comprising a conducting layer, a very thin insulating layer sprayed on said conducting layer, and a second conducting layer sprayed on said insulating layer, said conducting layers having different electron emissivities and said insulating layer remaining substantially cold during the operation of the rectifier and consisting of a compound, the positive part of which cold and non-ionized during the operation of the rectifier.
  • a dry rectifier comprising two outside layers formed of conductive substances having different electron emissivities, and an intermediate layer of a substance of a colloidal varnish nature.
  • said material being substantially

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biotechnology (AREA)
  • Thermistors And Varistors (AREA)
  • Coating By Spraying Or Casting (AREA)
  • Laminated Bodies (AREA)
  • Electrodes For Compound Or Non-Metal Manufacture (AREA)
  • Battery Electrode And Active Subsutance (AREA)
  • Train Traffic Observation, Control, And Security (AREA)
US534358A 1930-05-15 1931-05-01 Dry rectifier Expired - Lifetime US2002221A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL378444X 1930-05-15
DEN37878A DE712674C (de) 1930-05-15 1935-03-11 Verfahren zur Herstellung von Elektrodensystemen mit unsymmetrischer Leitfaehigkeit

Publications (1)

Publication Number Publication Date
US2002221A true US2002221A (en) 1935-05-21

Family

ID=25989175

Family Applications (3)

Application Number Title Priority Date Filing Date
US469610D Pending USB469610I5 (de) 1930-05-15
US534358A Expired - Lifetime US2002221A (en) 1930-05-15 1931-05-01 Dry rectifier
US67053A Expired - Lifetime US2137428A (en) 1930-05-15 1936-03-04 Electrode system of unsymmetrical conductivity

Family Applications Before (1)

Application Number Title Priority Date Filing Date
US469610D Pending USB469610I5 (de) 1930-05-15

Family Applications After (1)

Application Number Title Priority Date Filing Date
US67053A Expired - Lifetime US2137428A (en) 1930-05-15 1936-03-04 Electrode system of unsymmetrical conductivity

Country Status (6)

Country Link
US (3) US2002221A (de)
BE (2) BE379606A (de)
DE (2) DE681108C (de)
FR (2) FR716615A (de)
GB (2) GB378444A (de)
NL (1) NL32845C (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2465768A (en) * 1941-06-26 1949-03-29 Hartford Nat Bank & Trust Co Blocking-layer cell
US2756165A (en) * 1950-09-15 1956-07-24 Dean A Lyon Electrically conducting films and process for forming the same

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE976574C (de) * 1939-10-17 1963-11-21 Standard Elek K Lorenz Ag Verfahren zur Herstellung von Trockengleichrichterplatten
BE478832A (de) * 1942-07-02 1900-01-01
DE970124C (de) * 1944-01-17 1958-09-04 Siemens Ag Verfahren zur Herstellung von Selengleichrichtern
BE458445A (de) * 1944-03-04
US2452603A (en) * 1944-04-08 1948-11-02 Standard Telephones Cables Ltd Metal contact rectifier
US2473884A (en) * 1946-05-07 1949-06-21 Westinghouse Electric Corp Contact means
NL160163B (nl) * 1950-03-31 Staley Mfg Co A E Werkwijze voor het vervaardigen van tabletten.
US2622116A (en) * 1950-05-13 1952-12-16 Edward B Gregg Thermoelectric device
BE510386A (de) * 1951-04-05 1900-01-01
US2761095A (en) * 1952-12-08 1956-08-28 Fansteel Metallurgical Corp Selenium rectifier
DE974915C (de) * 1953-05-02 1961-05-31 Standard Elek K Lorenz Ag Verfahren zur Herstellung von Selengleichrichtern mit einer Lackschicht zwischen Selen und Deckelektrode zur Verwendung fuer Regelzwecke
DE975284C (de) * 1954-02-19 1961-11-02 Licentia Gmbh Selengleichrichter mit einem auf der Selenschicht oder auf der Traegerelektrode aufgebrachten ringfoermigen Isolierstueck
NL221258A (de) * 1954-11-29
US2968014A (en) * 1959-04-01 1961-01-10 Kentucky Res Foundation Synthetic stibnite crystal and method for producing the same
DE1295700B (de) * 1964-03-25 1969-05-22 Licentia Gmbh Selenkleingleichrichter
DE3110153A1 (de) * 1980-03-28 1982-05-13 Berthold H. Dr. 5630 Remscheid Daimler Verfahren und vorrichtung zur speicherung von energie

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2465768A (en) * 1941-06-26 1949-03-29 Hartford Nat Bank & Trust Co Blocking-layer cell
US2756165A (en) * 1950-09-15 1956-07-24 Dean A Lyon Electrically conducting films and process for forming the same

Also Published As

Publication number Publication date
BE379606A (de) 1931-06-30
DE712674C (de) 1941-10-23
USB469610I5 (de)
BE414231A (de)
FR716615A (fr) 1931-12-24
GB378444A (en) 1932-08-08
GB469610A (en) 1937-07-26
FR47181E (fr) 1937-02-06
NL32845C (de) 1934-06-15
US2137428A (en) 1938-11-22
DE681108C (de) 1939-09-14

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