US20020074163A1 - Mounting structure of a semiconductor device, and a process for mounting a semiconductor device on a mounting substrate - Google Patents
Mounting structure of a semiconductor device, and a process for mounting a semiconductor device on a mounting substrate Download PDFInfo
- Publication number
- US20020074163A1 US20020074163A1 US09/922,384 US92238401A US2002074163A1 US 20020074163 A1 US20020074163 A1 US 20020074163A1 US 92238401 A US92238401 A US 92238401A US 2002074163 A1 US2002074163 A1 US 2002074163A1
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- United States
- Prior art keywords
- semiconductor device
- mounting
- electrode
- bump electrode
- mounting substrate
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Definitions
- the present invention relates to a mounting structure of a semiconductor device, and a process for mounting a semiconductor device on a mounting substrate such as a printed circuit board having conductor patterns on which the semiconductor device with a plurality of bump electrodes is mounted.
- a flip chip bonding process is widely employed, where a semiconductor device is mounted on a printed circuit board (as a mounting substrate) by a facedown bonding method.
- a plurality of bump electrodes 14 having end surfaces 14 A as shown in the figure is bonded on aluminum electrode pads 12 provided on a semiconductor device 10 .
- each tip of the bump electrode 14 of the semiconductor device 10 is treated a leveling process by a leveler made of such as brass, so that all end surfaces 14 A have the same height and have relatively large area as shown in FIG. 9.
- the leveling process is done with a load weight approximately expressed by N ⁇ 50 gram-force, where the N is the number of bonding pads formed on the semiconductor device 10 .
- the bump electrode 14 of the semiconductor device 10 is positioned to conductor patterns 22 formed on the printed circuit board 20 . Then heat and pressure are added to the bump electrode 14 from backside of the semiconductor device 10 , thereby the bump electrode 14 is bonded on the conductor pattern 22 of the printed circuit board 20 .
- a filler 30 of thermosetting resin is filled between the semiconductor device 10 and the printed circuit board 20 to seal gaps there-between.
- An object of the invention is to provide a mounting structure of a semiconductor device, and a process for mounting a semiconductor device on a mounting substrate such as a printed circuit board having conductor patterns on which the semiconductor device with a plurality of bump electrodes is mounted.
- Another object of the present invention is to provide a new mounting structure of a semiconductor device, and a process for mounting a semiconductor device on a printed circuit board, wherein it is avoided for foreign bodies such as resin particles to be put between a bump electrode of the semiconductor device and a conductor pattern of the printed circuit board.
- Another object of the present invention is to provide a new mounting structure of a semiconductor device, and a process for mounting a semiconductor device on a mounting substrate, wherein there is formed a bump electrode having an acute tip such as cone-shaped top on the semiconductor device to be mounted on the printed circuit board by a facedown bonding method.
- each bump electrode and conductor pattern are joined with face contact by gradually transforming the shape of the bump electrode including the acute tip thereof.
- the process comprises the steps of a bonding step for providing a plurality of bump electrodes having acute tip on electrode pads of the semiconductor device, a leveling step for slightly making flat the acute tip of the bump electrodes by a leveler with relatively light load weight, a positioning step for positioning the tip of the bump electrode on the conductor pattern of the mounting substrate, and a mounting step for depressing the tip of the bump electrode against the conductor pattern slowly with heat and load weight.
- a bonding step for providing a plurality of bump electrodes having acute tip on electrode pads of the semiconductor device
- a leveling step for slightly making flat the acute tip of the bump electrodes by a leveler with relatively light load weight
- a positioning step for positioning the tip of the bump electrode on the conductor pattern of the mounting substrate
- a mounting step for depressing the tip of the bump electrode against the conductor pattern slowly with heat and load weight.
- each bump electrode of the semiconductor device has an acute tip formed on top of the bump electrode before mounting.
- Each acute tip of the bump electrode is preferably flattened slightly with relatively light load weight.
- the tip of the bump electrode is positioned on the conductor pattern of the printed circuit board and pressed slowly against the conductor pattern with pressure and heat.
- Each tip of the bump electrode is gradually transformed and joined to the conductor electrode with face contact.
- each tip of the bump electrode has only small top surface before mounting, so that during mounting process it is avoidable to put foreign body between the bump electrode and the conductor pattern of the printed circuit board.
- the tip of bump electrode is gradually transformed by being pressed against the conductor pattern of the mounting substrate, and this transformation of the bump electrode pushes out foreign body existed between the bump electrode and conductor pattern from inside to outside, and finally the bump electrode is transformed as to perform a face contact with the conductor pattern while excluding foreign body.
- each tip of the bump electrode is flattened slightly by a leveler with a light load weight. Then each tip of the bump electrode of the semiconductor device is positioned on a conductor pattern of a mounting substrate in a positioning step. Then the semiconductor device is depressed against the mounting substrate with load weight and heat in a next mounting step. In this mounting step, each top of the bump electrode is slowly depressed on the conductor pattern of the mounting substrate, and is gradually transformed so as to perform face contact condition between the transformed bump electrode and the conductor pattern.
- a conglobation is formed at an end of a gold wire having a diameter of about 25 ⁇ m by an electric discharging at first. Then thus formed conglobation of the gold wire is depressed on the aluminum electrode pad 112 with an ultrasonic heating for making alloy of gold and aluminum, and after that the gold wire is pulled off as to form the acute tip on the bump electrode.
- FIG. 1 is a schematic cross sectional view of a semiconductor device used in a mounting structure and a mounting process of the present invention.
- FIG. 2 is a schematic cross sectional view showing a leveling process for a tip of a bump electrode of the semiconductor device shown in FIG. 1.
- FIG. 3 is a schematic cross sectional view of the bump electrode of the semiconductor device shown in FIG. 1.
- FIG. 4 is a schematic cross sectional view of one example of a printed circuit board to be used in a mounting structure and a mounting process of a semiconductor device according to the present invention.
- FIG. 5 is a schematic cross sectional view showing a positioning step for positioning the semiconductor device in FIG. 1 and the printed circuit board in FIG. 4.
- FIG. 6 is a schematic cross sectional view showing a mounting step for mounting the semiconductor device in FIG. 1 and the printed circuit board in FIG. 4.
- FIG. 7A to FIG. 7C are a series of schematic cross sectional views showing a transforming of a bump electrode in the mounting step.
- FIG. 8 is a schematic cross sectional view showing a condition where the semiconductor device shown in FIG. 1 is mounted on an up-curved printed circuit board.
- FIG. 9 is a schematic cross sectional view showing one example of a conventional semiconductor device having a plurality of bump electrodes.
- FIG. 10 is a schematic cross sectional view showing a printed circuit board on which the semiconductor device as shown in FIG. 9 is mounted.
- FIG. 1 through to FIG. 6 are schematic cross sectional views for explaining one example of a mounting structure and a mounting process of a semiconductor device on a mounting substrate, and a mounting structure of a semiconductor device of the present invention is explained at first.
- a semiconductor device 110 of this embodiment has a plurality of aluminum electrode pads 112 formed on a surface 110 A of the semiconductor device 110 .
- a bump electrode 114 is bonded on each of the aluminum electrode pad 112 .
- This bump electrode 114 is made of conductive material having characteristics such as plastic and heat deposition. One example of this material is gold (Au).
- Each bump electrode 114 is provided a cone shaped acute tip 114 A.
- This acute tip 114 A is formed as follows. Namely, a conglobation is formed at an end of a gold wire having a diameter of about 25 ⁇ m by an electric discharging at first. Then thus formed conglobation of the gold wire is depressed on the aluminum electrode pad 112 with an ultrasonic heating for making alloy of gold and aluminum, and after that the gold wire is pulled off as to form the acute tip 114 A on the bump electrode 114 .
- FIG. 2 shows a leveling process applied to the tip 114 A of the bump electrode 114 of the semiconductor device 110 .
- thus formed acute tip 114 A of the bump electrode 114 is treated a leveling process slightly with a light load weight by a flat surface 132 A of a brass leveler 132 .
- a load weight is N ⁇ (4 ⁇ 5) gram-force, where N is the number of the tips 114 A of the bump electrodes 114 formed on the semiconductor device 110 .
- each bump electrode 114 has a size of about 60 ⁇ m at bottom, 5 to 10 ⁇ m at top and about 40 ⁇ m in height after the leveling process.
- each tip 114 A of the bump electrode 114 has only small flat surface 114 B before mounting as described above, so that during mounting process it is avoidable to put foreign body between the bump electrode 114 and a conductor pattern of a printed circuit board.
- FIG. 4 shows one example of a printed circuit board 120 on which the semiconductor device 110 is mounted. And as shown in this figure, on a surface of the printed circuit board 120 , there is formed a conductor pattern 122 on which the semiconductor device 110 is mounted. Further there is provided a filler (sealing material) 130 of a thermosetting resin on the printed circuit board 120 in advance. This filler 130 is positioned between the conductor patterns 122 as shown in FIG. 4.
- FIGS. 5 to 6 show processes for mounting the semiconductor device 110 on the printed circuit board 120 in facedown condition.
- each bump electrode 114 of the semiconductor device 110 and the conductor pattern 122 of the printed circuit board 120 are positioned against each other.
- the semiconductor device 110 is moved slowly toward the printed circuit board 120 , and thereby the top surface 114 B of the bump electrode 114 is depressed against the conductor pattern 122 of the printed circuit board 120 .
- a load weight is added to the semiconductor device 110 to move it toward the printed circuit board 120 , and simultaneously the bump electrode 114 is heated up to a predetermined temperature to soften it. Resultantly as shown in FIG.
- each tip 114 A of the bump electrode 114 is gradually depressed and transformed, after that the bump electrode 114 and the conductor pattern 122 are joined each other.
- the tip 114 A of the bump electrode 114 is moved slowly toward the conductor pattern 122 at a speed of 0.1 mm/sec., for example.
- FIGS. 7A to 7 C show a series of transforming process of the bump electrode 114 in the mounting process.
- FIG. 7A shows a step wherein the tip 114 A of the bump electrode 114 is contacted with the conductor pattern 122
- FIG. 7B shows a step wherein the tip 114 A of the bump electrode 114 is started to transform by a load weight and heat
- FIG. 7C shows a step where the bump electrode 114 is depressed enough against the conductor pattern 122 of the printed circuit board 120 .
- the transformation of the tip 114 A of the bump electrode 114 operates to exclude foreign bodies such as resin particles existed between the bump electrode 114 and the conductor pattern 122 during this process from inside to outside as depicted by arrows a.
- the height of the bump electrode becomes about 20 ⁇ m and the diameter becomes about 70 ⁇ m, respectively.
- the filler 130 placed on the printed circuit board 120 is depressed and spread between the semiconductor device 110 and the printed circuit board 120 , and a space between the semiconductor device 110 and the printed circuit board 120 is filled with the filler 130 as shown in FIG. 6. This filler 130 seals the space between the semiconductor device 110 and the printed circuit board 120 in insulating condition.
- the tip 114 A of the bump electrode 114 and the conductor pattern 122 of the printed circuit board 120 are gradually joined as to exclude foreign bodies such as resin particles, and it is easy to have a good contacting condition between the bump electrode 114 and the conductor pattern 122 , and the productivity of final product is improved with high reliability.
- FIG. 1 shows a step for bonding the bump electrode 114 on the semiconductor device 110 .
- the semiconductor device 110 has a plurality of aluminum electrode pads 112 on the top surface 110 A, and the bump electrode 114 is bonded on this aluminum electrode pad 112 of the semiconductor device 120 .
- FIG. 2 shows a leveling step applied to each tip 114 A of the bump electrode 114 as depicted in FIG. 1.
- a brass leveler 132 is placed on the acute tip 114 A of the bump electrode 114 as to form a small flat surface 114 B at every tip 114 A of the bump electrode 114 .
- the acute tip 114 A of the bump electrode 114 is treated a leveling process slightly with a light load weight by a flat surface 132 A of a brass leveler 132 .
- a weight load is N ⁇ (4 ⁇ 5) gram-force, where N is the number of the tip 114 A of the bump electrode 114 formed on the semiconductor device 110 .
- Each flat surface 114 B of the bump electrode 114 has a circular area having a diameter of 5 to 10 ⁇ m, resultantly.
- the semiconductor device 110 provided thus formed the bump electrode 114 with leveled acute tip 114 A is mounted on the conductor pattern 122 of the printed circuit board 120 . Further there is provided a filler (seal material) 130 of a thermosetting resin on the printed circuit board 120 in advance.
- FIG. 5 shows a step for positioning the semiconductor device 110 relative to the printed circuit board 120 in facedown condition.
- the bump electrode 114 of the semiconductor device 110 and the conductor pattern 122 of the printed circuit board 120 are positioned each other. Then the semiconductor device 110 is slowly moved towards the printed circuit board 120 so as to contact the small flat surface 110 B of the bump electrode 114 with the conductor pattern 122 .
- FIG. 6 shows a step for mounting the semiconductor device 110 on the printed circuit board 120 with a load weight.
- a load weight is added to the semiconductor device 110 to move it toward the printed circuit board 120 , and simultaneously the bump electrode 114 is heated up to a predetermined temperature to soften it. Resultantly each tip 114 A of the bump electrode 114 A is gradually depressed and transformed, and finally the bump electrode 114 and the conductor pattern 122 are joined each other.
- the tip 114 A of the bump electrode 114 is moved slowly toward the conductor pattern 122 at a speed of 0.1 mm/sec., for example.
- the transformation of the tip 114 A of the bump electrode 114 operates to exclude foreign bodies such as resin particles existed between the bump electrode 114 and the conductor pattern 122 during this process from inside to outside as depicted by arrows a.
- the filler 130 placed on the printed circuit board 120 is depressed and spread between the semiconductor device 110 and the printed circuit board 120 , and a space between the semiconductor device 110 and the printed circuit board 120 is filled with the filler 130 as shown in FIG. 6.
- the acute tip 114 A of the bump electrode 114 is joined to the conductor pattern 122 of the printed circuit board 120 while excluding foreign bodies during the mounting process, it is easily obtain good contact relation between the bump electrode 114 and the conductor pattern 122 .
- the bump electrode 114 is transformed during the mounting process, so that even if the printed circuit board 120 has a little bend as shown in FIG. 8, it is easy to obtain good contact relation between the bump electrode 114 of the semiconductor device 110 and the conductor pattern 122 of the printed circuit board 120 .
Abstract
An acute tip is formed on each top of bump electrodes of a semiconductor device to be mounted on a printed circuit board by facedown bonding. Each acute tip is then applied a leveling process as to form a small flat surface on its top. After that, each of the bump electrode is depressed gradually with heat for transforming the bump electrode against a conductor pattern of the printed circuit board for mounting . Resultantly, the semiconductor device is mounted on the printed circuit board firmly and without including foreign body between the bump electrode of the semiconductor device and the conductor pattern of the printed circuit board.
Description
- 1. Field of the Invention
- The present invention relates to a mounting structure of a semiconductor device, and a process for mounting a semiconductor device on a mounting substrate such as a printed circuit board having conductor patterns on which the semiconductor device with a plurality of bump electrodes is mounted.
- 2. Description of the Related Art
- Conventionally, a flip chip bonding process is widely employed, where a semiconductor device is mounted on a printed circuit board (as a mounting substrate) by a facedown bonding method. In this mounting process, as shown in FIG. 9, a plurality of
bump electrodes 14 havingend surfaces 14A as shown in the figure is bonded onaluminum electrode pads 12 provided on asemiconductor device 10. - Namely, after the
bump electrode 14 is bonded on thealuminum electrode pad 12, each tip of thebump electrode 14 of thesemiconductor device 10 is treated a leveling process by a leveler made of such as brass, so that allend surfaces 14A have the same height and have relatively large area as shown in FIG. 9. The leveling process is done with a load weight approximately expressed by N×50 gram-force, where the N is the number of bonding pads formed on thesemiconductor device 10. - Then as shown in FIG. 10, when the
semiconductor device 10 is mounted on a printedcircuit board 20, thebump electrode 14 of thesemiconductor device 10 is positioned toconductor patterns 22 formed on the printedcircuit board 20. Then heat and pressure are added to thebump electrode 14 from backside of thesemiconductor device 10, thereby thebump electrode 14 is bonded on theconductor pattern 22 of the printedcircuit board 20. - A
filler 30 of thermosetting resin is filled between thesemiconductor device 10 and the printedcircuit board 20 to seal gaps there-between. - In this conventional method of mounting a semiconductor device on a printed circuit board as above described, there is a defect that foreign body h as a resin particle or something like that is easily put between the
end face 14A (top surface) and theconductor pattern 22 of the printedcuit board 20 during the mounting process. Resultantly, the reliability of semiconductor mounting process is degraded. For example, the foreign undesirably put there-between deteriorates contact condition of the surface 14 a with theconductor pattern 22, and this degrades reliability nd productivity of a final product that is installed thus processed printed ircuit board. - An object of the invention is to provide a mounting structure of a semiconductor device, and a process for mounting a semiconductor device on a mounting substrate such as a printed circuit board having conductor patterns on which the semiconductor device with a plurality of bump electrodes is mounted.
- Another object of the present invention is to provide a new mounting structure of a semiconductor device, and a process for mounting a semiconductor device on a printed circuit board, wherein it is avoided for foreign bodies such as resin particles to be put between a bump electrode of the semiconductor device and a conductor pattern of the printed circuit board.
- Further another object of the present invention is to provide a new mounting structure of a semiconductor device, and a process for mounting a semiconductor device on a mounting substrate, wherein there is formed a bump electrode having an acute tip such as cone-shaped top on the semiconductor device to be mounted on the printed circuit board by a facedown bonding method.
- In order to overcome above-described defects existed in the conventional mounting structure, it is proposed a new mounting structure, wherein there is provided an acute tip at each bump electrode of a semiconductor device when mounting the semiconductor device having a plurality of bump electrodes on a mounting substrate having conductor patterns.
- These acute tips of the bump electrodes are slightly made flat by a leveler with a relatively light load weight, then depressed slowly on the conductor patterns of the mounting substrate with heat and pressure. Resultantly, each bump electrode and conductor pattern are joined with face contact by gradually transforming the shape of the bump electrode including the acute tip thereof.
- In the process of mounting a semiconductor device having a plurality of bump electrodes on the conductor pattern of the mounting substrate according to the present invention, the process comprises the steps of a bonding step for providing a plurality of bump electrodes having acute tip on electrode pads of the semiconductor device, a leveling step for slightly making flat the acute tip of the bump electrodes by a leveler with relatively light load weight, a positioning step for positioning the tip of the bump electrode on the conductor pattern of the mounting substrate, and a mounting step for depressing the tip of the bump electrode against the conductor pattern slowly with heat and load weight. During this mounting step, the bump electrode and the conductor pattern of the mounting substrate are bonded with face contact while transforming shape of the bump electrode gradually.
- In the mounting structure for the semiconductor device according to the present invention, each bump electrode of the semiconductor device has an acute tip formed on top of the bump electrode before mounting. Each acute tip of the bump electrode is preferably flattened slightly with relatively light load weight. And the tip of the bump electrode is positioned on the conductor pattern of the printed circuit board and pressed slowly against the conductor pattern with pressure and heat. Each tip of the bump electrode is gradually transformed and joined to the conductor electrode with face contact.
- According to the present invention, each tip of the bump electrode has only small top surface before mounting, so that during mounting process it is avoidable to put foreign body between the bump electrode and the conductor pattern of the printed circuit board.
- Namely the tip of bump electrode is gradually transformed by being pressed against the conductor pattern of the mounting substrate, and this transformation of the bump electrode pushes out foreign body existed between the bump electrode and conductor pattern from inside to outside, and finally the bump electrode is transformed as to perform a face contact with the conductor pattern while excluding foreign body.
- Therefore, foreign bodies are seldom put between the conductor pattern and the bump electrode.
- According to the present invention, it is easily performed to obtain a good contact condition between the bump electrode and the conductor pattern, and thereby a reliability and productivity of a final product are improved.
- In the method for mounting the semiconductor device on the mounting substrate according to the present invention, at first a plurality of bump electrodes having acute tip is provided on each of an electrode pad formed on a semiconductor device at a bonding process. In the following leveling step, each tip of the bump electrode is flattened slightly by a leveler with a light load weight. Then each tip of the bump electrode of the semiconductor device is positioned on a conductor pattern of a mounting substrate in a positioning step. Then the semiconductor device is depressed against the mounting substrate with load weight and heat in a next mounting step. In this mounting step, each top of the bump electrode is slowly depressed on the conductor pattern of the mounting substrate, and is gradually transformed so as to perform face contact condition between the transformed bump electrode and the conductor pattern.
- In order to make an acute tip at each top of the bump electrode, a conglobation is formed at an end of a gold wire having a diameter of about 25 μm by an electric discharging at first. Then thus formed conglobation of the gold wire is depressed on the
aluminum electrode pad 112 with an ultrasonic heating for making alloy of gold and aluminum, and after that the gold wire is pulled off as to form the acute tip on the bump electrode. - FIG. 1 is a schematic cross sectional view of a semiconductor device used in a mounting structure and a mounting process of the present invention.
- FIG. 2 is a schematic cross sectional view showing a leveling process for a tip of a bump electrode of the semiconductor device shown in FIG. 1.
- FIG. 3 is a schematic cross sectional view of the bump electrode of the semiconductor device shown in FIG. 1.
- FIG. 4 is a schematic cross sectional view of one example of a printed circuit board to be used in a mounting structure and a mounting process of a semiconductor device according to the present invention.
- FIG. 5 is a schematic cross sectional view showing a positioning step for positioning the semiconductor device in FIG. 1 and the printed circuit board in FIG. 4.
- FIG. 6 is a schematic cross sectional view showing a mounting step for mounting the semiconductor device in FIG. 1 and the printed circuit board in FIG. 4.
- FIG. 7A to FIG. 7C are a series of schematic cross sectional views showing a transforming of a bump electrode in the mounting step.
- FIG. 8 is a schematic cross sectional view showing a condition where the semiconductor device shown in FIG. 1 is mounted on an up-curved printed circuit board.
- FIG. 9 is a schematic cross sectional view showing one example of a conventional semiconductor device having a plurality of bump electrodes.
- FIG. 10 is a schematic cross sectional view showing a printed circuit board on which the semiconductor device as shown in FIG. 9 is mounted.
- Preferred embodiments of a mounting structure and a process for mounting a semiconductor device will be described in detail below with reference to the accompanied drawings. In one example of the present invention, a flip chip mounting process wherein a semiconductor device is mounted a printed circuit board in a face down condition is explained.
- FIG. 1 through to FIG. 6 are schematic cross sectional views for explaining one example of a mounting structure and a mounting process of a semiconductor device on a mounting substrate, and a mounting structure of a semiconductor device of the present invention is explained at first.
- A
semiconductor device 110 of this embodiment has a plurality ofaluminum electrode pads 112 formed on asurface 110A of thesemiconductor device 110. Abump electrode 114 is bonded on each of thealuminum electrode pad 112. Thisbump electrode 114 is made of conductive material having characteristics such as plastic and heat deposition. One example of this material is gold (Au). Eachbump electrode 114 is provided a cone shapedacute tip 114A. - This
acute tip 114A is formed as follows. Namely, a conglobation is formed at an end of a gold wire having a diameter of about 25 μm by an electric discharging at first. Then thus formed conglobation of the gold wire is depressed on thealuminum electrode pad 112 with an ultrasonic heating for making alloy of gold and aluminum, and after that the gold wire is pulled off as to form theacute tip 114A on thebump electrode 114. - FIG. 2 shows a leveling process applied to the
tip 114A of thebump electrode 114 of thesemiconductor device 110. In case of this example, thus formedacute tip 114A of thebump electrode 114 is treated a leveling process slightly with a light load weight by aflat surface 132A of abrass leveler 132. Preferably a load weight is N×(4˜5) gram-force, where N is the number of thetips 114A of thebump electrodes 114 formed on thesemiconductor device 110. - After this process, there is formed a small
flat surface 114B at eachtip 114A of thebump electrode 114 as shown in FIG. 3. The size of the smallflat surface 114B is 5 to 10 μm as a diameter. Namely, as shown in FIG. 3, eachbump electrode 114 has a size of about 60 μm at bottom, 5 to 10 μm at top and about 40 μm in height after the leveling process. - According to the present invention, each
tip 114A of thebump electrode 114 has only smallflat surface 114B before mounting as described above, so that during mounting process it is avoidable to put foreign body between thebump electrode 114 and a conductor pattern of a printed circuit board. - FIG. 4 shows one example of a printed
circuit board 120 on which thesemiconductor device 110 is mounted. And as shown in this figure, on a surface of the printedcircuit board 120, there is formed aconductor pattern 122 on which thesemiconductor device 110 is mounted. Further there is provided a filler (sealing material) 130 of a thermosetting resin on the printedcircuit board 120 in advance. Thisfiller 130 is positioned between theconductor patterns 122 as shown in FIG. 4. - FIGS.5 to 6 show processes for mounting the
semiconductor device 110 on the printedcircuit board 120 in facedown condition. As shown in FIG. 5, at first, eachbump electrode 114 of thesemiconductor device 110 and theconductor pattern 122 of the printedcircuit board 120 are positioned against each other. Then thesemiconductor device 110 is moved slowly toward the printedcircuit board 120, and thereby thetop surface 114B of thebump electrode 114 is depressed against theconductor pattern 122 of the printedcircuit board 120. In this condition, a load weight is added to thesemiconductor device 110 to move it toward the printedcircuit board 120, and simultaneously thebump electrode 114 is heated up to a predetermined temperature to soften it. Resultantly as shown in FIG. 6, eachtip 114A of thebump electrode 114 is gradually depressed and transformed, after that thebump electrode 114 and theconductor pattern 122 are joined each other. In this process, thetip 114A of thebump electrode 114 is moved slowly toward theconductor pattern 122 at a speed of 0.1 mm/sec., for example. - FIGS. 7A to7C show a series of transforming process of the
bump electrode 114 in the mounting process. FIG. 7A shows a step wherein thetip 114A of thebump electrode 114 is contacted with theconductor pattern 122, FIG. 7B shows a step wherein thetip 114A of thebump electrode 114 is started to transform by a load weight and heat, and FIG. 7C shows a step where thebump electrode 114 is depressed enough against theconductor pattern 122 of the printedcircuit board 120. As shown in FIGS. 7B and 7C, the transformation of thetip 114A of thebump electrode 114 operates to exclude foreign bodies such as resin particles existed between thebump electrode 114 and theconductor pattern 122 during this process from inside to outside as depicted by arrows a. - As shown in FIG. 7C, by the depression of the
bump electrode 114 to theconductor pattern 122, the height of the bump electrode becomes about 20 μm and the diameter becomes about 70 μm, respectively. In this process, thefiller 130 placed on the printedcircuit board 120 is depressed and spread between thesemiconductor device 110 and the printedcircuit board 120, and a space between thesemiconductor device 110 and the printedcircuit board 120 is filled with thefiller 130 as shown in FIG. 6. Thisfiller 130 seals the space between thesemiconductor device 110 and the printedcircuit board 120 in insulating condition. According to the present invention as described above, thetip 114A of thebump electrode 114 and theconductor pattern 122 of the printedcircuit board 120 are gradually joined as to exclude foreign bodies such as resin particles, and it is easy to have a good contacting condition between thebump electrode 114 and theconductor pattern 122, and the productivity of final product is improved with high reliability. - Next, a process for mounting a semiconductor device according to one embodiment of the present invention is explained with reference to FIGS.1 to 7. Firstly, FIG. 1 shows a step for bonding the
bump electrode 114 on thesemiconductor device 110. As described before, thesemiconductor device 110 has a plurality ofaluminum electrode pads 112 on thetop surface 110A, and thebump electrode 114 is bonded on thisaluminum electrode pad 112 of thesemiconductor device 120. - FIG. 2 shows a leveling step applied to each
tip 114A of thebump electrode 114 as depicted in FIG. 1. As shown in FIG. 2, abrass leveler 132 is placed on theacute tip 114A of thebump electrode 114 as to form a smallflat surface 114B at everytip 114A of thebump electrode 114. - In case of this example, the
acute tip 114A of thebump electrode 114 is treated a leveling process slightly with a light load weight by aflat surface 132A of abrass leveler 132. Preferably a weight load is N×(4˜5) gram-force, where N is the number of thetip 114A of thebump electrode 114 formed on thesemiconductor device 110. Eachflat surface 114B of thebump electrode 114 has a circular area having a diameter of 5 to 10 μm, resultantly. - Then the
semiconductor device 110 provided thus formed thebump electrode 114 with leveledacute tip 114A is mounted on theconductor pattern 122 of the printedcircuit board 120. Further there is provided a filler (seal material) 130 of a thermosetting resin on the printedcircuit board 120 in advance. - FIG. 5 shows a step for positioning the
semiconductor device 110 relative to the printedcircuit board 120 in facedown condition. In this positioning step, thebump electrode 114 of thesemiconductor device 110 and theconductor pattern 122 of the printedcircuit board 120 are positioned each other. Then thesemiconductor device 110 is slowly moved towards the printedcircuit board 120 so as to contact the small flat surface 110B of thebump electrode 114 with theconductor pattern 122. - FIG. 6 shows a step for mounting the
semiconductor device 110 on the printedcircuit board 120 with a load weight. In this mounting step, a load weight is added to thesemiconductor device 110 to move it toward the printedcircuit board 120, and simultaneously thebump electrode 114 is heated up to a predetermined temperature to soften it. Resultantly eachtip 114A of thebump electrode 114A is gradually depressed and transformed, and finally thebump electrode 114 and theconductor pattern 122 are joined each other. In this process, thetip 114A of thebump electrode 114 is moved slowly toward theconductor pattern 122 at a speed of 0.1 mm/sec., for example. - As explained before in FIGS. 7A and 7C, the transformation of the
tip 114A of thebump electrode 114 operates to exclude foreign bodies such as resin particles existed between thebump electrode 114 and theconductor pattern 122 during this process from inside to outside as depicted by arrows a. - In this step, besides depressed transformation of the
bump electrode 114, thefiller 130 placed on the printedcircuit board 120 is depressed and spread between thesemiconductor device 110 and the printedcircuit board 120, and a space between thesemiconductor device 110 and the printedcircuit board 120 is filled with thefiller 130 as shown in FIG. 6. - Thus according to the mounting process of the present invention, the
acute tip 114A of thebump electrode 114 is joined to theconductor pattern 122 of the printedcircuit board 120 while excluding foreign bodies during the mounting process, it is easily obtain good contact relation between thebump electrode 114 and theconductor pattern 122. Further in this embodiment, thebump electrode 114 is transformed during the mounting process, so that even if the printedcircuit board 120 has a little bend as shown in FIG. 8, it is easy to obtain good contact relation between thebump electrode 114 of thesemiconductor device 110 and theconductor pattern 122 of the printedcircuit board 120. - While we have described and shown the particular embodiments of our invention, it will be understood that many modifications may be made without departing from the spirit thereof, and we contemplate by the appended claims to cover any modifications as fall within the true spirit and scope of our invention.
Claims (12)
1. A mounting structure of a semiconductor device mounted on a mounting substrate, comprising;
a semiconductor device having a bump electrode which has an acute tip on top,
a mounting substrate on which said semiconductor device is mounted, and
a conductor pattern formed on said mounting substrate, wherein said acute tip is gradually depressed on said conductor pattern of said mounting substrate.
2. A mounting structure of a semiconductor device mounted on a mounting substrate as claimed in claim 1 , wherein said acute tip of the bump electrode is treated with a leveling process as to form a small flat surface before depressed on said conductor pattern of the mounting substrate.
3. A mounting structure of a semiconductor device mounted on a mounting substrate as claimed in claim 2 , wherein heat is added to said bump electrode of the semiconductor device so that said bump electrode is transformed during depression of the bump electrode to the conductor pattern of the mounting substrate.
4. A mounting structure of a semiconductor device mounted on a mounting substrate as claimed in claim 3 , wherein said mounting substrate is a printed circuit board and said bump electrode is depressed on the conductor pattern formed on the printed circuit board.
5. A mounting structure of a semiconductor device mounted on a mounting substrate as claimed in claim 4 , wherein said semiconductor device has an electrode pad and said bump electrode is formed on this electrode pad.
6. A mounting structure of a semiconductor device mounted on a mounting substrate as claimed in claim 1 , wherein said acute tip of the bump electrode has a shape of cone.
7. A process of mounting a semiconductor device on a mounting substrate, said process comprising the steps of,
bonding a plurality of bump electrodes each having an acute tip on a pad electrode formed on a semiconductor device,
leveling all of said acute tips of the bump electrodes as to have the same height,
positioning said tip of the bump electrode on a conductor pattern of a mounting substrate, and
mounting said acute tip of the bonding electrode on said conductor pattern of the mounting electrode by depressing gradually.
8. A process of mounting a semiconductor device on a mounting substrate as claimed in claim 7 , wherein heat is added to said bump electrode in order to be transformed during said mounting step.
9. A process of mounting a semiconductor device on a mounting substrate as claimed in claim 8 , wherein said acute tip of the bump electrode is formed to have a cone-shape at said bonding step.
10. A process of forming bump electrodes on a semiconductor device to be mounted on a mounting substrate, said process comprising the steps of,
providing a conglobation on an end of a gold wire,
placing said conglobation of gold wire on electrode pads formed on a semiconductor device,
pulling off said gold wire from said conglobation as to form bump electrodes having an acute tip on each top of said bump electrodes, and
leveling all of said acute tips of said bump electrodes as to have a small flat surfaces on each top of the bump electrodes.
11. A process of forming bump electrodes on a semiconductor device to be mounted on a mounting substrate as claimed in claim 10 , wherein each of said electrode pads is made of aluminum and said conglobation of the gold wire is heated by ultrasonic heating as to make as alloy of the gold and the aluminum during said placing step.
12. A process of mounting a semiconductor device on a mounting substrate, said process comprising the steps of,
providing a conglobation on an end of a gold wire,
placing said conglobation of gold wire on an electrode pad formed on a semiconductor device,
pulling off said gold wire from said conglobation as to form a bump electrode having an acute tip on its top,
leveling all of said acute tips of the bump electrodes as to have the same height,
positioning said tip of the bump electrode on a conductor pattern of a mounting substrate, and
mounting said acute tip of the bonding electrode on said conductor pattern of the mounting electrode by depressing gradually while transforming said bump electrode formed on the electrode pad of the semiconductor device.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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US09/922,384 US20020074163A1 (en) | 1999-05-13 | 2001-08-03 | Mounting structure of a semiconductor device, and a process for mounting a semiconductor device on a mounting substrate |
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Application Number | Priority Date | Filing Date | Title |
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JPJP11-132104 | 1999-05-13 | ||
JP11132104A JP2000323534A (en) | 1999-05-13 | 1999-05-13 | Mounting structure of semiconductor element and mounting method thereof |
US09/561,941 US6612024B1 (en) | 1999-05-13 | 2000-05-01 | Method of mounting a device to a mounting substrate |
US09/922,384 US20020074163A1 (en) | 1999-05-13 | 2001-08-03 | Mounting structure of a semiconductor device, and a process for mounting a semiconductor device on a mounting substrate |
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US09/561,941 Division US6612024B1 (en) | 1999-05-13 | 2000-05-01 | Method of mounting a device to a mounting substrate |
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US20020074163A1 true US20020074163A1 (en) | 2002-06-20 |
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US09/561,941 Expired - Fee Related US6612024B1 (en) | 1999-05-13 | 2000-05-01 | Method of mounting a device to a mounting substrate |
US09/922,384 Abandoned US20020074163A1 (en) | 1999-05-13 | 2001-08-03 | Mounting structure of a semiconductor device, and a process for mounting a semiconductor device on a mounting substrate |
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Application Number | Title | Priority Date | Filing Date |
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US09/561,941 Expired - Fee Related US6612024B1 (en) | 1999-05-13 | 2000-05-01 | Method of mounting a device to a mounting substrate |
Country Status (2)
Country | Link |
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US (2) | US6612024B1 (en) |
JP (1) | JP2000323534A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100126763A1 (en) * | 2008-11-21 | 2010-05-27 | Fujitsu Limited | Wire bonding method, electronic apparatus, and method of manufacturing same |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6821821B2 (en) * | 1996-04-18 | 2004-11-23 | Tessera, Inc. | Methods for manufacturing resistors using a sacrificial layer |
JP3700563B2 (en) * | 2000-09-04 | 2005-09-28 | セイコーエプソン株式会社 | Bump forming method and semiconductor device manufacturing method |
JP3918708B2 (en) * | 2002-10-08 | 2007-05-23 | セイコーエプソン株式会社 | Circuit board and manufacturing method thereof, transfer chip, transfer source substrate, electro-optical device, electronic apparatus |
USRE47600E1 (en) * | 2003-11-10 | 2019-09-10 | STATS ChipPAC Pte. Ltd. | Semiconductor device and method of forming electrical interconnect with stress relief void |
US8216930B2 (en) | 2006-12-14 | 2012-07-10 | Stats Chippac, Ltd. | Solder joint flip chip interconnection having relief structure |
TWI378516B (en) | 2003-11-10 | 2012-12-01 | Chippac Inc | Bump-on-lead flip chip interconnection |
KR100597993B1 (en) * | 2004-04-08 | 2006-07-10 | 주식회사 네패스 | Bump for semiconductor package, semiconductor package applying the bump and method for fabricating the semiconductor package |
JP4627632B2 (en) * | 2004-05-17 | 2011-02-09 | Okiセミコンダクタ株式会社 | Semiconductor device |
US20090014852A1 (en) * | 2007-07-11 | 2009-01-15 | Hsin-Hui Lee | Flip-Chip Packaging with Stud Bumps |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3373481A (en) * | 1965-06-22 | 1968-03-19 | Sperry Rand Corp | Method of electrically interconnecting conductors |
US5874780A (en) * | 1995-07-27 | 1999-02-23 | Nec Corporation | Method of mounting a semiconductor device to a substrate and a mounted structure |
US5889326A (en) * | 1996-02-27 | 1999-03-30 | Nec Corporation | Structure for bonding semiconductor device to substrate |
US6081997A (en) * | 1997-08-14 | 2000-07-04 | Lsi Logic Corporation | System and method for packaging an integrated circuit using encapsulant injection |
-
1999
- 1999-05-13 JP JP11132104A patent/JP2000323534A/en active Pending
-
2000
- 2000-05-01 US US09/561,941 patent/US6612024B1/en not_active Expired - Fee Related
-
2001
- 2001-08-03 US US09/922,384 patent/US20020074163A1/en not_active Abandoned
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100126763A1 (en) * | 2008-11-21 | 2010-05-27 | Fujitsu Limited | Wire bonding method, electronic apparatus, and method of manufacturing same |
Also Published As
Publication number | Publication date |
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US6612024B1 (en) | 2003-09-02 |
JP2000323534A (en) | 2000-11-24 |
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