US20020026985A1 - Etching device - Google Patents
Etching device Download PDFInfo
- Publication number
- US20020026985A1 US20020026985A1 US09/925,704 US92570401A US2002026985A1 US 20020026985 A1 US20020026985 A1 US 20020026985A1 US 92570401 A US92570401 A US 92570401A US 2002026985 A1 US2002026985 A1 US 2002026985A1
- Authority
- US
- United States
- Prior art keywords
- etchant
- semiconductor wafer
- center portion
- spinner table
- supply nozzle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000005530 etching Methods 0.000 title claims abstract description 44
- 230000002093 peripheral effect Effects 0.000 claims abstract description 36
- 239000004065 semiconductor Substances 0.000 description 77
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 5
- 239000012530 fluid Substances 0.000 description 5
- 229910017604 nitric acid Inorganic materials 0.000 description 5
- 239000007921 spray Substances 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000003068 static effect Effects 0.000 description 3
- 229910003638 H2SiF6 Inorganic materials 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000004064 recycling Methods 0.000 description 2
- ZEFWRWWINDLIIV-UHFFFAOYSA-N tetrafluorosilane;dihydrofluoride Chemical compound F.F.F[Si](F)(F)F ZEFWRWWINDLIIV-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910020479 SiO2+6HF Inorganic materials 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- XLYOFNOQVPJJNP-ZSJDYOACSA-N heavy water Substances [2H]O[2H] XLYOFNOQVPJJNP-ZSJDYOACSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
Definitions
- the present invention relates to an etching device for etching a workpiece such as a semiconductor wafer held on a rotating spinner table by applying an etchant to the surface of the workpiece.
- a circuit is formed in a large number of areas arranged in a form of a lattice on the surface of a semiconductor wafer and each area having the circuit formed therein is diced to produce a semiconductor chip.
- the thickness of the semiconductor chip is desirably made as small as possible.
- the semiconductor chip is desirably formed as thin as possible. To this end, before the semiconductor wafer is divided into chips, the back surface of the semiconductor wafer is ground to a predetermined thickness.
- the breaking strength of the semiconductor chip is reduced by the influence of fine cracks or distortion formed by grinding, thereby reducing the yield and shortening the service life of a product.
- the back surface of the semiconductor wafer is subjected to an etching treatment to remove the fine cracks or distortion generated by grinding after the grinding of the back surface of the semiconductor wafer in order to improve the bending strength and further reduce the thickness of the semiconductor chip.
- a so-called spin etching device which comprises a spinner table for holding and turning a semiconductor wafer as a workpiece and an etchant supply nozzle for supplying an etchant to the rotation center portion of the workpiece held on the spinner table, and supplies an etchant containing, for example, nitric acid and hydrofluoric acid from the etchant supply nozzle.
- the spin etching device When the ground surface of the semiconductor wafer as a workpiece is etched by the spin etching device, there arises such a problem that the amount of etching increases in an area of from the center portion toward the periphery of the semiconductor wafer, that is, the semiconductor wafer is thick at its center portion and becomes thinner toward its periphery. For example, when a semiconductor wafer having a diameter of 200 mm is etched by the spin etching device and its center portion is etched 20 ⁇ m, its peripheral portion is etched 30 ⁇ m or more. As the amount of etching increases, the difference in thickness between the center portion and the peripheral portion of the semiconductor wafer becomes larger.
- the inventor of the present invention has conducted intensive studies and has found that the temperature of an etchant supplied to the rotation center portion of a workpiece having a diameter of approximately 300 mm is raised by friction heat and an activation caused by rotation and accumulated reaction heat. That is, for example, even the temperature at the center portion is approximately 20° C., the temperature at the peripheral portion is raised up to approximately 70° C. It is considered that the reaction rate is accelerated due to this rise in the temperature of the etchant, so that the amount removed of etching increases with the approach to the periphery of the workpiece. Accordingly, the inventor of the present invention has found that the difference between the amount of etching at the center portion and that at the peripheral portion of the workpiece can be reduced by cooling the etchant at the periphery of the workpiece.
- an etching device comprising a spinner table for holding a workpiece and turning it and an etchant supply means for supplying an etchant to the surface of the workpiece held on the spinner table, wherein
- the etchant supply means comprises a center portion supply nozzle for supplying the etchant to the rotation center portion of the workpiece held on the spinner table and a peripheral portion supply nozzle for supplying the etchant to an area between the rotation center portion and the peripheral portion of the workpiece.
- the above peripheral portion supply nozzle desirably has a plurality of nozzles provided at positions different in distance from the above center portion supply nozzle.
- the amount of the etchant supplied from the above peripheral portion supply nozzle is desirably set larger than the amount of the etchant supplied from the above center portion supply nozzle.
- FIG. 1 is a schematic diagram showing an embodiment of an etching device constituted according to the present invention.
- FIG. 1 shows an etching device constituted according to the present invention.
- the etching device comprises a spinner table 2 for holding a workpiece to be etched, such as a semiconductor wafer.
- This spinner table 2 is rotatably mounted and has a flat circular base 21 which is substantially horizontal at the top.
- An electric motor 3 is connected to the spinner table 2 as a drive source via an appropriate power transmission mechanism (not shown). When the electric motor 3 is driven, the spinner table 2 is turned at a predetermined revolution speed.
- a carrying means 4 schematically shown in FIG. 1 is disposed relative to the spinner table 2 .
- the workpiece to be etched is a substantially disk-like semiconductor wafer 5 made from silicon
- the carrying means 4 may be a known means which can vacuum-adsorb the semiconductor wafer 5 at the end of a movable arm to carry it through a predetermined route.
- This carrying means 4 carries, for example, one semiconductor wafer 5 discharged from a grinding machine to the top of the spinner table 2 and then, carries out the etched, rinsed and dried semiconductor wafer 5 from the top of the spinner table 5 to a predetermined position (etching, rinsing and drying of the semiconductor wafer 5 will be referred to later).
- the semiconductor wafer 5 is carried to the top of the spinner table 2 in such a state that it is inverted, that is, its back surface faces up.
- a circuit (not shown) is formed in a large number of sections arranged in a lattice form on the top surface of the semiconductor wafer 5 , that is, the undersurface of the semiconductor wafer 5 in a state where it is placed on the spinner table 2 .
- a protective film (not shown) which can be formed of an appropriate synthetic resin film is affixed to the top surface of the semiconductor wafer 5 .
- the back surface of the semiconductor wafer 5 that is, the upwardly exposed top-side surface of the semiconductor wafer 5 in a state where it is placed on the spinner table 2 is ground by a grinding machine (not shown) also called “back grinder” before it is carried to the top of the spinner table 2 and therefore has a distortion caused by grinding. Etching is carried out for the purpose of removing the distortion.
- the outer diameter of the semiconductor wafer 5 placed on the spinner table 2 is slightly larger than the outer diameter of the circular base 21 of the spinner table 2 .
- the spinner table 2 is provided with an air-spray means 6 .
- This air-spray means 6 has a passage 61 which extends from below the spinner table 2 to the periphery of the spinner table 2 and then along the undersurface of the semiconductor wafer 5 placed on the spinner table 2 .
- Air supplied from a compressed air source (not sown) flows along the undersurface of the semiconductor wafer 5 from the periphery of the spinner table 2 to prevent the etchant applied to the top-side surface of the semiconductor wafer 5 from flowing onto the undersurface of the semiconductor wafer 5 .
- the spinner table 2 is further provided with an etchant collection means 7 for collecting the etchant applied to the top-side surface of the semiconductor wafer 5 on the spinner table 2 .
- This etchant collection means 7 consists of a static member 71 and a movable member 72 which form a collection tank in cooperation with each other.
- the static member 71 has a cylindrical outer wall 711 , an annular bottom 712 and a cylindrical inner wall 713 .
- the movable member 72 has a cylindrical lower portion and an upper portion having an arcuate cross section. While the etchant is applied to the top-side surface of the semiconductor wafer 5 on the spinner table 2 , the movable member 72 is located to an upper position indicated by solid lines in the FIG.
- the movable member 72 is moved to a lower position indicated by two-dot chain lines in the FIG. 1 so that the annular inlet 73 is closed to prevent the cleaning fluid from flowing into the etchant collection means 7 .
- the illustrated etching device comprises an etchant supply means 8 for supplying the etchant to the semiconductor wafer 5 held on the spinner table 2 .
- the etchant supply means 8 in the illustrated embodiment comprises an etchant storage tank 81 .
- This etchant storage tank 81 contains the etchant 82 to be applied to the top-side surface of the semiconductor wafer 5 which is made from silicon and placed on the top of the above spinner table 2 .
- This etchant 82 is an aqueous solution containing nitric acid and hydrofluoric acid.
- the etchant 82 in the etchant storage tank 81 is supplied to the top-side surface of the semiconductor wafer 5 on the spinner table 2 via a feed pipe 84 by a pump 83 .
- the etchant supply means 8 in the illustrated embodiment comprises a center portion supply nozzle 85 for supplying the etchant to the rotation center portion of the semiconductor wafer 5 held on the spinner table 2 and two peripheral portion supply nozzles 86 a and 86 b for supplying the etchant to an area between the rotation center portion and the periphery of the semiconductor wafer 5 . These nozzles are connected to the above feed pipe 84 .
- the two peripheral portion supply nozzles 86 a and 86 b are arranged at positions different in distance from the center portion supply nozzle 85 .
- the left peripheral portion supply nozzle 86 b in the FIG. 1 is disposed at a position farther from the center portion supply nozzle 85 than the right peripheral portion supply nozzle 86 a.
- the center portion supply nozzle 85 and the two peripheral portion supply nozzles 86 a and 86 b are constructed to be selectively moved to a working position (position shown in FIG. 1) above the semiconductor wafer 5 placed on the spinner table 2 and a non-working position where they are retreated from above the semiconductor wafer 5 .
- the depicted etching device in the illustrated embodiment comprises an etchant discharge means 9 for discharging the etchant collected in the collection tank of the above etchant collection means 7 .
- This etchant discharge means 9 consists of a drain pipe 91 connected to a discharge port (not shown) formed in the annular bottom 712 forming the collection tank of the etchant collection means 7 and a drain tank 92 for storing the etchant discharged through the drain pipe 91 .
- Etching is carried out by activating the pump 83 of the etchant supply means 8 to spray the etchant 82 in the etchant storage tank 81 toward the top-side surface of the semiconductor wafer 5 from the center portion supply nozzle 85 and the peripheral portion supply nozzles 86 a and 86 b through the feed pipe 84 .
- an oxidation reaction represented by the following formula takes place as a first stage:
- the etching of the semiconductor wafer 5 made from silicon can be represented by the following formula:
- the etching rate is determined by a concentration of hydrofluoric acid and the temperature of the etchant 82 . Accordingly, to set a predetermined etching rate, it is important that the temperature of the etchant 82 should be set to a predetermined value, the content of nitric acid in the etchant 82 is set to excessive and the content of hydrofluoric acid should be set to a predetermined value.
- the spinner table 2 is turned at approximately 600 rpm, whereby the etchant 82 sprayed from the center portion supply nozzle 85 and the peripheral portion supply nozzles 86 a and 86 b is caused to flow over the entire top-side surface of the semiconductor wafer 5 fully uniformly.
- the air-spray means 6 fitted onto the spinner table 2 causes air to flow along the undersurface of the semiconductor wafer 5 from the periphery of the spinner table 2 , thereby preventing the etchant 82 from being contacted to the undersurface, that is, the top surface of the semiconductor wafer 5 .
- the movable member 72 of the etchant collection means 7 is positioned to the upper position indicated by the solid lines in the FIG. 1 and the etchant 82 caused to flow over the top-side surface of the semiconductor wafer 5 is collected in the etchant collection means 7 .
- the etchant 82 collected in the etchant collection means 7 is discharged into the drain tank 92 through the drain pipe 91 of the etchant discharge means 9 .
- the temperature of the etchant supplied from the center portion supply nozzle 85 to the center portion of the semiconductor wafer 5 as the workpiece placed on the spinner table 2 is raised by accumulated reaction heat and by friction heat and an activation caused by rotation as it moves toward the periphery of the semiconductor wafer 5 .
- peripheral portion supply nozzles 86 a and 86 b for supplying the etchant are provided in the area between the rotation center portion and the periphery of the semiconductor wafer 5 held on the spinner table 2 in the illustrated embodiment, the etchant which is supplied to the center portion of the semiconductor wafer 5 from the center portion supply nozzle 85 and whose temperature rises as it moves toward the periphery is cooled by the etchant supplied from the peripheral portion supply nozzle 86 a.
- the etchant supplied from the above center portion supply nozzle 85 and the peripheral portion supply nozzle 86 a rises as it moves toward the periphery
- the etchant is cooled by the etchant supplied from the peripheral portion supply nozzle 86 b provided farther from the center portion supply nozzle 85 than the peripheral portion supply nozzle 86 a. Since the etchant supplied from the peripheral portion supply nozzles 86 a and 86 b thus functions as a cooling fluid in the illustrated embodiment, the temperature of the etchant supplied to the semiconductor wafer 5 which is the workpiece does not rise as it moves toward the periphery.
- the temperature of the etchant on the semiconductor wafer 5 is equalized, thereby making it possible to equalize the reaction rate, reduce variations in the amount of etching, and control variations in the thickness of the etched semiconductor wafer 5 within an allowable range. It is desirable that the etchant supplied from the peripheral portion supply nozzles 86 a and 86 b should be supplied toward the center portion side and not directly toward the periphery to act on the etchant moving from the center portion side toward the periphery.
- the amount of the etchant supplied from the peripheral portion supply nozzle 86 a should be made larger than that of the etchant supplied from the center portion supply nozzle 85 and should be made smaller than that of the etchant supplied from the peripheral portion supply nozzle 86 b.
- the semiconductor wafer 5 on the spinner table 2 may be rinsed as required and dried.
- the center portion supply nozzle 85 and the peripheral portion supply nozzles 86 a and 86 b for supplying the etchant 82 are retreated from the working position above the semiconductor wafer 5 to the non-working position and a jet nozzle (not shown) for spraying a cleaning fluid which may be pure water is positioned above the semiconductor wafer 5 to spray the cleaning fluid onto the top-side surface of the semiconductor wafer 5 .
- the semiconductor wafer 5 can be dried by so-called spin drying that allows to rotate the spinner table 2 at a high speed, for example, approximately at 2,000 to 3,000 rpm.
- the present invention is not limited to the embodiment.
- the present invention is applied to the etching device of the type in which the etchant collected in the etchant collection means 7 is discharged into the drain tank 92 of the etchant discharge means 9 .
- the present invention can also be applied to an etching device of a recycling type in which the etchant collected in the etchant collection means 7 is recycled to the etchant storage tank 81 . Since the etchant is supplied from the center portion supply nozzle and the peripheral portion supply nozzles in the present invention, the amount of the etchant supplied is larger than that of the prior art. Therefore, application of the etching device of the present invention to the etchant recycling type etching device is effective.
- the etching device of the present invention comprises a center portion supply nozzle for supplying an etchant to the rotation center portion of a workpiece held on the spinner table and peripheral portion supply nozzles for supplying the etchant to an area between the rotation center portion and the periphery of the workpiece, the etchant supplied from the center portion supply nozzle to the center portion of the workpiece and having temperature elevated as it moves toward the periphery is cooled by the etchant supplied from the peripheral portion supply nozzles.
- the temperature of the etchant supplied to the workpiece does not rise as it moves toward the periphery and the temperature of the etchant on the workpiece is equalized, whereby the reaction rate is equalized, variations in the amount of etching are minimized, and variations in the thickness of the etched workpiece are small and can be controlled within an allowable range.
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000251152A JP2002064079A (ja) | 2000-08-22 | 2000-08-22 | エッチング装置 |
JP2000-251152 | 2000-08-22 |
Publications (1)
Publication Number | Publication Date |
---|---|
US20020026985A1 true US20020026985A1 (en) | 2002-03-07 |
Family
ID=18740597
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/925,704 Abandoned US20020026985A1 (en) | 2000-08-22 | 2001-08-10 | Etching device |
Country Status (3)
Country | Link |
---|---|
US (1) | US20020026985A1 (de) |
JP (1) | JP2002064079A (de) |
DE (1) | DE10139743A1 (de) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060261042A1 (en) * | 2005-05-19 | 2006-11-23 | Cecile Delattre | Uniform chemical etching method |
US20060292887A1 (en) * | 2005-06-24 | 2006-12-28 | Seiko Epson Corporation | Manufacturing method for a semiconductor device |
EP1965410A1 (de) | 2007-03-01 | 2008-09-03 | Sumco Corporation | Einzelwaferätzgerät |
EP1981072A1 (de) * | 2006-01-31 | 2008-10-15 | SUMCO Corporation | Ätzverfahren für einzelwafer |
US20110059612A1 (en) * | 2009-09-08 | 2011-03-10 | Mitsubishi Electric Corporation | Method of manufacturing semiconductor device |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007115728A (ja) | 2005-10-18 | 2007-05-10 | Sumco Corp | ウェーハの枚葉式エッチング装置及びウェーハの枚葉式エッチング方法 |
JP4476217B2 (ja) * | 2005-12-27 | 2010-06-09 | 大日本スクリーン製造株式会社 | 基板処理装置 |
JP2008251806A (ja) * | 2007-03-30 | 2008-10-16 | Sumco Corp | ウェーハの枚葉式エッチング方法及びそのエッチング装置 |
JP5391014B2 (ja) * | 2009-09-28 | 2014-01-15 | 大日本スクリーン製造株式会社 | 基板処理装置および基板処理方法 |
JP5661598B2 (ja) * | 2011-11-22 | 2015-01-28 | 東京エレクトロン株式会社 | 基板処理装置および基板処理方法 |
JP5911757B2 (ja) * | 2012-06-08 | 2016-04-27 | ソニー株式会社 | 基板処理方法、基板処理装置、および記録媒体 |
JP7329391B2 (ja) * | 2019-08-23 | 2023-08-18 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理システム |
-
2000
- 2000-08-22 JP JP2000251152A patent/JP2002064079A/ja not_active Withdrawn
-
2001
- 2001-08-10 US US09/925,704 patent/US20020026985A1/en not_active Abandoned
- 2001-08-13 DE DE10139743A patent/DE10139743A1/de not_active Ceased
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060261042A1 (en) * | 2005-05-19 | 2006-11-23 | Cecile Delattre | Uniform chemical etching method |
FR2886053A1 (fr) * | 2005-05-19 | 2006-11-24 | Soitec Silicon On Insulator | Procede de gravure chimique uniforme |
WO2007010149A1 (fr) * | 2005-05-19 | 2007-01-25 | S.O.I.Tec Silicon On Insulator Technologies | Procede de gravure chimique uniforme |
US7396483B2 (en) | 2005-05-19 | 2008-07-08 | S.O.I.Tec Silicon On Insulator Technologies | Uniform chemical etching method |
US20060292887A1 (en) * | 2005-06-24 | 2006-12-28 | Seiko Epson Corporation | Manufacturing method for a semiconductor device |
US7410908B2 (en) * | 2005-06-24 | 2008-08-12 | Seiko Epson Corporation | Manufacturing method for a semiconductor device |
EP1981072A4 (de) * | 2006-01-31 | 2009-01-21 | Sumco Corp | Ätzverfahren für einzelwafer |
EP1981072A1 (de) * | 2006-01-31 | 2008-10-15 | SUMCO Corporation | Ätzverfahren für einzelwafer |
US20090004876A1 (en) * | 2006-01-31 | 2009-01-01 | Sakae Koyata | Method for Etching Single Wafer |
US8466071B2 (en) | 2006-01-31 | 2013-06-18 | Sumco Corporation | Method for etching single wafer |
EP1965410A1 (de) | 2007-03-01 | 2008-09-03 | Sumco Corporation | Einzelwaferätzgerät |
US20090186488A1 (en) * | 2007-03-01 | 2009-07-23 | Takeo Katoh | Single wafer etching apparatus |
US20110059612A1 (en) * | 2009-09-08 | 2011-03-10 | Mitsubishi Electric Corporation | Method of manufacturing semiconductor device |
US8435417B2 (en) | 2009-09-08 | 2013-05-07 | Mitsubishi Electric Corporation | Method of manufacturing semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
DE10139743A1 (de) | 2002-04-04 |
JP2002064079A (ja) | 2002-02-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: DISCO CORPORATION, JAPAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:KAI, KENYA;REEL/FRAME:012070/0450 Effective date: 20010726 |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |