US20010024838A1 - Semiconductor device having a built-in heat sink and process of manufacturing same - Google Patents

Semiconductor device having a built-in heat sink and process of manufacturing same Download PDF

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Publication number
US20010024838A1
US20010024838A1 US09/780,377 US78037701A US2001024838A1 US 20010024838 A1 US20010024838 A1 US 20010024838A1 US 78037701 A US78037701 A US 78037701A US 2001024838 A1 US2001024838 A1 US 2001024838A1
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heat sink
assembly
semiconductor chip
housing
internal
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US6350634B2 (en
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Manny Kin Ma
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Micron Technology Inc
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Micron Technology Inc
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/433Auxiliary members in containers characterised by their shape, e.g. pistons
    • H01L23/4334Auxiliary members in encapsulations
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01039Yttrium [Y]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/102Material of the semiconductor or solid state bodies
    • H01L2924/1025Semiconducting materials
    • H01L2924/10251Elemental semiconductors, i.e. Group IV
    • H01L2924/10253Silicon [Si]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1532Connection portion the connection portion being formed on the die mounting surface of the substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Definitions

  • This invention relates in general to semiconductor devices and, more particularly, to a semiconductor device assembly having a integral heat sink.
  • semiconductor chip refers to a silicon chip or die containing circuitry to form an active device.
  • semiconductor device assembly refers to the semiconductor chip and associated components.
  • the “associated components” include the leads for connecting the chip to a circuit board, a heat sink for dissipating heat, and an encapsulating package. Efforts to provide better semiconductor device assemblies have targeted the associated components, e.g., the packaging and heat sinks.
  • VSMP vertical surface mount package
  • FIGS. 1 illustrates a VSMP assembly 1 having a plastic housing 4 .
  • the plastic housing 4 is a rectangular parallelepiped having length “a,” width “b,” and height “c.”
  • the width “b” is ordinarily relatively small, e.g., 1.2 mm, compared to the length “a” and the height c.
  • Supports legs 3 provide for vertically mounting the VSMP assembly 1 on a circuit board (not shown).
  • FIG. 2A is a cross-sectional view of VSMP assembly 1 along line B-B of FIG. 1.
  • Metallic wires 7 connect a semiconductor chip 6 to lead terminals 2 .
  • the lead terminals 2 carry input and output signals to and from the semiconductor chip 6 .
  • VSMP assemblies currently house low power semiconductor chips. It would be advantageous to use the VSMP assemblies with semiconductor chips having high power consumption.
  • High power chips include, but are not limited to, static or dynamic random-access memories (“SRAM” or “DRAM”, respectively), transistor-transistor logic (“TTL”) and Sync-Link DRAM (“SLDRAM”). Power consumption can reach 2 watts in some contemporary high power chips, e.g., current SLDRAM's.
  • High power semiconductor devices can generate enough the heat to damage a semiconductor chip. Furthermore, the plastic housing impedes heat dissipation due to plastic's insulating properties. For high power chips, the semiconductor device assembly needs elements to dissipate heat that is not efficiently dissipated through the plastic housing.
  • the prior art has employed heat sinks to dissipate heat generated by high power semiconductor chips.
  • high power chips are packaged in leadless chip carriers or in quad-flat packages. These types of packages have generally used either internal heat sinks or external heat sinks.
  • the heat sink is inside the plastic package and in close contact with a large portion of the surface of the chip.
  • the close contact conducts heat from the chip to the heat sink.
  • an internal heat sink does not efficiently transfer heat from the heat sink to the exterior of the package. If an internal heat sink is employed, a high-power semiconductor chip can still overheat.
  • FIG. 2B illustrates a device assembly 5 employing an external heat sink 8 .
  • the heat sink 5 makes mechanical and thermal contact with a support member 9 attached to a back face of the semiconductor chip 6 .
  • a portion of the external heat sink 8 makes direct contact with the support member 9 through a hole 11 in a front or large-area surface of the device assembly 5 .
  • external heats have several drawbacks.
  • the heat sink 8 may move reducing the quality of the thermal contact between the heat sink 8 and the underlying semiconductor chip 6 . Attaching the heat sink 8 flat against the plastic housing 4 can reduce risk of relative motion between the heat sink 8 and the housing 4 , but the thermal efficiency for heat dissipation will also be reduced.
  • the external heat sink may not provide an adequate solution to the need for heat dissipation in high power semiconductor chips.
  • the present invention is directed to overcoming, or at least reducing the effects of, one or more of the problems set forth above.
  • the present invention provides a semiconductor device assembly comprising a semiconductor chip, a heat sink having internal and external portions, and a housing that encapsulates the semiconductor chip and the internal portion.
  • the internal portion thermally couples to one surface of the semiconductor chip.
  • the present invention provides a process of fabricating a semiconductor device assembly. The process includes: providing a semiconductor chip; providing a heat sink having internal and external portions; mechanically attaching a surface of the chip to the internal portion; and applying an encapsulating material around the semiconductor chip and the internal portions.
  • FIG. 1 is a 3-dimensional view of a vertical surface mount package (VSMP) assembly of the prior art
  • FIG. 2A is a cross-sectional view along axis B-B of the VSMP assembly of FIG. 1;
  • FIG. 2B is a cross-sectional view of a prior art semiconductor device assembly employing an external heat sink
  • FIG. 3 is a 3-dimensional view of a VSMP assembly having a built-in heat sink in accordance with one embodiment of the present invention
  • FIGS. 4A and 4B are cross-sectional views of the VSMP assembly of FIG. 3, taken along the axes A-A and B-B therein;
  • FIGS. 5A and 5B are perspective views of the VSMP assembly of FIG. 3 including an alternate embodiments of the exterior fin structures in FIG. 3;
  • FIG. 6 is a 3-dimensional view of the VSMP assembly of FIG. 3 including an alternate embodiment to the exterior fin structures in FIGS. 3, 5A, and 5 B;
  • FIGS. 7A and 7B are cross-sectional views of the VSMP assembly of FIG. 6 along the axes A-A and B-B therein;
  • FIG. 8 is a flowchart illustrating an embodiment of a process for manufacturing the VSMP assemblies of FIGS. 3 - 7 .
  • FIGS. 3, 4A, and 4 B show an embodiment for a vertical surface mount package (VSMP) assembly 10 having a built-in heat sink.
  • VSMP vertical surface mount package
  • the semiconductor chip 6 may, in some embodiments, have a high power consumption, similar to the power consumption of a SLDRAM device although this is not necessary to the practice of the invention.
  • Metallic wires 7 connect the semiconductor chip 6 to the lead terminals 2 .
  • the lead terminals 2 provide a path for input and output signals to and from the semiconductor chip 6 during operation.
  • the VSMP assembly 10 also includes a heat sink 12 .
  • the heat sink 12 is a molded structure and is made of a thermally conductive material, e.g., aluminum filled with polymer, copper or gold filled with fused silica or boron nitrate.
  • the heat sink 12 has an internal and any external portions 13 , 14 with respect to the housing 4 .
  • a central area 13 ′ of the internal portion 13 attaches to the backside of the semiconductor chip 6 through a lead on chip (LOC) tape 15 .
  • the LOC tape is thermally conductive, but not electrically conductive.
  • the plastic housing 4 encapsulates the chip 6 and internal portion 13 .
  • the external portions 14 of the heat sink 12 , and the lead terminals 2 protrude from the housing 4 .
  • the heat sink 12 is permanently mounted in the VSMP assembly.
  • the VSMP assembly 10 is a rectangular parallelepiped from which the external portions 14 of the heat sink 12 protrude.
  • the rectangular parallelepiped has front/back face surfaces “z” defined by the length “a” and height “c,” and top/bottom and left/right end surfaces “t,” “x,” and “y” defined by the length “a” and width “b” and the height “c” and width “b,” respectively.
  • the heat sink 12 protrudes through the narrow end surfaces “y” and/or “t” so that plastic housing 4 can secure the heat sink 12 more firmly than if it protruded through either the front or back faces z.
  • the exterior portions 14 of the heat sink 12 include a continuation 16 A of the internal portion 13 and a radiating fin structure 16 B comprising a plurality of posts 17 .
  • the continuation 16 A leaves the housing 4 through right/left end surfaces “y” and provides a lateral clearance between the fin structure 16 B and the housing 4 .
  • the fin structure 16 B extends perpendicular to the front face surface “z.” The form of the fin structure 16 B depends on implementation specific constraints.
  • the posts 17 of the fin structure 16 B can take a variety of lengths and shapes, e.g., rectangular, circular, triangular, and configurations, e.g., hollow or solid.
  • the continuation 16 A may also be wider than the height “c” of the housing 4 to provide a greater area for the fin structure 16 B.
  • the plastic housing 4 can have a variety of shapes, e.g., round, square, elliptical, etc.
  • the heat sink 12 , terminals 2 , and supports 3 protrude from the smaller area surfaces of the plastic housing 4 .
  • the semiconductor chip 6 generates heat during normal operation.
  • the heat will flow from the chip 6 to the conductive LOC tape 15 and into the heat sink 12 , because the LOC tape 15 provides for good heat transfer. Nevertheless, the LOC tape 15 electrically insulates the heat sink 12 from the chip 6 .
  • the LOC tape 15 may be as thin as about ten millionths of an inch.
  • the posts 17 aid in dissipating the heat from the external portion 14 of the heat sink 12 . Air convection (not shown) may also assist in cooling the external portions 14 of the heat sink.
  • the shape and dimensions of the external portion 14 of the heat sink 12 depend on the specific details of the implementation, e.g., the power and size of the semiconductor chip 6 and the packing on a circuit board.
  • the shape and size of the heat sink 12 keeps the semiconductor chip 6 at a temperature of between about 70 to 120 degrees centigrade during normal operation.
  • FIG. 5A illustrates an embodiment of a VSMP assembly 20 .
  • First and second fin structures 22 , 24 of a heat sink 26 extend from the left and right end surfaces “y” and are directed approximately perpendicular to the front and back face surfaces “z” of the plastic housing 4 .
  • the fin structures 22 , 24 include a plurality of posts 27 A- 27 E that interlace to allow for dense packing of VSMP assemblies 20 .
  • Two VSMP assemblies 20 can be adjacent on a circuit board, because the fins 27 B and 27 D of a first one of the VSMP assemblies 20 would fit between the fins 27 A, 27 C, and 27 E of a second one of the VSMP assemblies 20 .
  • FIG. 5B illustrates a VSMP assembly 30 having an alternate fin structures 32 , 34 that may provide higher heat dissipation.
  • the interlinking arms 38 provide an additional larger external surface for heat dissipation. Additionally, the arms 38 provide a cage structure to protect the housing 4 from other adjacent devices (not shown). The housing 4 may be completely caged by the arms 38 .
  • the fingers 27 A, 27 C, and 27 E are complementarily positioned with respect to the fingers 27 B and 27 D. Consequently, an adjacent VSMP assembly 30 , can be packed on a circuit board (not shown) so that the fins 27 A- 27 E interlace.
  • the arms 38 may be attached, e.g., soldered or otherwise mechanically fixed, to the circuit board or to other VSMP assemblies (both not shown).
  • FIGS. 7A and 7B illustrate an embodiment in which an additional internal heat sink 50 of a thermally conductive material such as aluminum or copper mounts to the side of the chip 6 , which is opposite an internal portion 43 of a heat sink 42 .
  • the heat sink 42 has external and internal portions 44 , 43 .
  • LOC tape 15 attaches the internal heat sink 50 to the semiconductor chip 6 .
  • the internal heat sink 50 further increases the overall capacity for heat dissipation. Heat transferred to the internal heat sink 50 would be dissipated by passing through the plastic housing 4 .
  • the heat sink 12 of FIGS. 3, 4A, and 4 B forms means for transferring heat.
  • the heat sinks 26 of FIGS. 5A and 5B with alternate fin structures 22 , 24 and 32 , 34 form alternate means for transferring heat.
  • the heat sink 42 of FIGS. 6, 7A, and 7 B forms another means for transferring heat.
  • Each means for transferring heat comprises portions of a heat sink internal and external to the plastic housing 4 .
  • FIG. 8 is a flowchart illustrating a process 60 for manufacturing the VSMP assemblies 10 , 20 , 30 , 40 of FIGS. 3, 4A, 4 B, and 7 .
  • a semiconductor chip is provided.
  • a heat sink structure is molded to a three dimensional shape accommodating the operational characteristics of the semiconductor chip 6 .
  • the molding step of block 64 may produce a final form for the heat sink 12 , 42 .
  • the three dimensional shape may depend on the packing of employed for VSMP assemblies.
  • a thermally conductive material is attached between one surface of the semiconductor chip 6 and an internal portion of the heat sink 12 , 42 .
  • the attachment process employs LOC tape 15 and entails several steps. First, the LOC tape 15 , heat sink 12 , 42 , and chip 6 are positioned. Next, the LOC tape 15 , heat sink 12 , 42 , and chip 6 are heated to a temperature sufficient to make the LOC tape 15 pliable. Next, external pressure is used to compress and seal the LOC tape 15 between the heat sink 12 , 42 and semiconductor chip 6 .
  • LOC tape 15 has a thermal conductivity similar to that of SILOXANE®, produced by 3M®, of conductive epoxy or of silicon gel. After compressing the LOC tape 15 , one surface of the semiconductor chip 6 is less than about 0.0001 inches from the internal portions 13 , 43 of the heat sinks 12 , 42 of FIGS. 4A or 7 A, respectively.
  • the semiconductor chip 12 is electrically connected to the lead terminals 2 by the metallic wires 7 .
  • a jig (not shown) is used to hold the supporting terminals 3 , the heat sink 12 , 42 and the chip 6 in a mold.
  • a liquid plastic resin is injected into the mold to form the plastic housing 4 , which encapsulates, i.e. surrounds, the semiconductor chip 6 and the internal portion of the heat sink 12 , 42 , i.e. binding the heat sink 12 , 42 strongly to the housing 4 .
  • a material such as epoxy, poly-resin, or silicon polymer may be used to form the housing 4 .
  • the resulting plastic VSMP assembly 10 , 20 , 30 , 40 may be thin, i.e. have a thickness of about 1.2 mm.
  • the VSMP 10 , 20 , 30 , 40 assembly is mounted to a circuit board (not shown).
  • the heat sink 12 , 42 protrudes from an end or narrower surface of the housing 4 .

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

The present invention provides a semiconductor device assembly comprising a semiconductor chip, a heat sink having internal and external portions, and a housing that encapsulates the semiconductor chip and the internal portion. The internal portion thermally couples to one surface of the semiconductor chip. The present invention also provides a process of fabricating a semiconductor device assembly. The process includes: providing a semiconductor chip; providing a heat sink having internal and external portions; mechanically attaching a face of the chip to the internal portion; and applying an encapsulating material around the semiconductor chip and the internal portions.

Description

    BACKGROUND OF THE INVENTION
  • 1. Field of the Invention [0001]
  • This invention relates in general to semiconductor devices and, more particularly, to a semiconductor device assembly having a integral heat sink. [0002]
  • 2. Description of the Related Art [0003]
  • As used herein, the term “semiconductor chip” refers to a silicon chip or die containing circuitry to form an active device. The term “semiconductor device assembly” refers to the semiconductor chip and associated components. The “associated components” include the leads for connecting the chip to a circuit board, a heat sink for dissipating heat, and an encapsulating package. Efforts to provide better semiconductor device assemblies have targeted the associated components, e.g., the packaging and heat sinks. [0004]
  • To reduce costs and to promote miniaturization, some semiconductor manufacturers are employing a vertical surface mount package (VSMP) having multiple pins. The VSMP package mounts vertically on a circuit board thereby allowing for a greater density of device assemblies without departing from the use of plastic molding materials. [0005]
  • FIGS. [0006] 1 illustrates a VSMP assembly 1 having a plastic housing 4. The plastic housing 4 is a rectangular parallelepiped having length “a,” width “b,” and height “c.” The width “b” is ordinarily relatively small, e.g., 1.2 mm, compared to the length “a” and the height c. Supports legs 3 provide for vertically mounting the VSMP assembly 1 on a circuit board (not shown).
  • FIG. 2A is a cross-sectional view of VSMP assembly [0007] 1 along line B-B of FIG. 1. Metallic wires 7 connect a semiconductor chip 6 to lead terminals 2. The lead terminals 2 carry input and output signals to and from the semiconductor chip 6.
  • VSMP assemblies currently house low power semiconductor chips. It would be advantageous to use the VSMP assemblies with semiconductor chips having high power consumption. High power chips include, but are not limited to, static or dynamic random-access memories (“SRAM” or “DRAM”, respectively), transistor-transistor logic (“TTL”) and Sync-Link DRAM (“SLDRAM”). Power consumption can reach 2 watts in some contemporary high power chips, e.g., current SLDRAM's. [0008]
  • High power semiconductor devices can generate enough the heat to damage a semiconductor chip. Furthermore, the plastic housing impedes heat dissipation due to plastic's insulating properties. For high power chips, the semiconductor device assembly needs elements to dissipate heat that is not efficiently dissipated through the plastic housing. [0009]
  • The prior art has employed heat sinks to dissipate heat generated by high power semiconductor chips. Typically, high power chips are packaged in leadless chip carriers or in quad-flat packages. These types of packages have generally used either internal heat sinks or external heat sinks. [0010]
  • In the internal form, the heat sink is inside the plastic package and in close contact with a large portion of the surface of the chip. The close contact conducts heat from the chip to the heat sink. Nevertheless, since the plastic package is not a good thermal conductor, an internal heat sink does not efficiently transfer heat from the heat sink to the exterior of the package. If an internal heat sink is employed, a high-power semiconductor chip can still overheat. [0011]
  • FIG. 2B illustrates a [0012] device assembly 5 employing an external heat sink 8. The heat sink 5 makes mechanical and thermal contact with a support member 9 attached to a back face of the semiconductor chip 6. A portion of the external heat sink 8 makes direct contact with the support member 9 through a hole 11 in a front or large-area surface of the device assembly 5.
  • Still referring to FIG. 2B, external heats have several drawbacks. First, the [0013] hole 11 through a large area surface of the housing can weaken the physical strength of the device assembly 5. Second, attaching the heat 8 sink through the hole 11 does not provide a strong bond. The heat sink 8 may move reducing the quality of the thermal contact between the heat sink 8 and the underlying semiconductor chip 6. Attaching the heat sink 8 flat against the plastic housing 4 can reduce risk of relative motion between the heat sink 8 and the housing 4, but the thermal efficiency for heat dissipation will also be reduced. The external heat sink may not provide an adequate solution to the need for heat dissipation in high power semiconductor chips.
  • The present invention is directed to overcoming, or at least reducing the effects of, one or more of the problems set forth above. [0014]
  • SUMMARY OF THE INVENTION
  • In a first aspect, the present invention provides a semiconductor device assembly comprising a semiconductor chip, a heat sink having internal and external portions, and a housing that encapsulates the semiconductor chip and the internal portion. The internal portion thermally couples to one surface of the semiconductor chip. In a second aspect, the present invention provides a process of fabricating a semiconductor device assembly. The process includes: providing a semiconductor chip; providing a heat sink having internal and external portions; mechanically attaching a surface of the chip to the internal portion; and applying an encapsulating material around the semiconductor chip and the internal portions.[0015]
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • Other aspects and advantages of the invention will become apparent upon reading the following detailed description and upon reference to the drawings, in which: [0016]
  • FIG. 1 is a 3-dimensional view of a vertical surface mount package (VSMP) assembly of the prior art; [0017]
  • FIG. 2A is a cross-sectional view along axis B-B of the VSMP assembly of FIG. 1; [0018]
  • FIG. 2B is a cross-sectional view of a prior art semiconductor device assembly employing an external heat sink; [0019]
  • FIG. 3 is a 3-dimensional view of a VSMP assembly having a built-in heat sink in accordance with one embodiment of the present invention; [0020]
  • FIGS. 4A and 4B are cross-sectional views of the VSMP assembly of FIG. 3, taken along the axes A-A and B-B therein; [0021]
  • FIGS. 5A and 5B are perspective views of the VSMP assembly of FIG. 3 including an alternate embodiments of the exterior fin structures in FIG. 3; [0022]
  • FIG. 6 is a 3-dimensional view of the VSMP assembly of FIG. 3 including an alternate embodiment to the exterior fin structures in FIGS. 3, 5A, and [0023] 5B;
  • FIGS. 7A and 7B are cross-sectional views of the VSMP assembly of FIG. 6 along the axes A-A and B-B therein; and [0024]
  • FIG. 8 is a flowchart illustrating an embodiment of a process for manufacturing the VSMP assemblies of FIGS. [0025] 3-7.
  • While the invention is susceptible to various modifications and alternative forms, specific embodiments thereof have been shown by way of example in the drawings and are herein described in detail. It should be understood, however, that the description herein of specific embodiments is not intended to limit the invention to the particular forms disclosed, but on the contrary, the intention is to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the invention as defined by the appended claims. [0026]
  • DETAILED DESCRIPTION OF SPECIFIC EMBODIMENTS
  • Specific embodiments of the invention are described below. In the interest of clarity, not all features of an actual implementation are described in this specification. It will of course be appreciated that in the development of any such actual embodiment, numerous implementation-specific decisions must be made to achieve the developers' specific goals, such as compliance with system-related and business-related constraints, which will vary from one implementation to another. Moreover, it will be appreciated that such a development effort, even if complex and time-consuming, would be a routine undertaking for those of ordinary skill in the art having the benefit of this disclosure. [0027]
  • FIGS. 3, 4A, and [0028] 4B show an embodiment for a vertical surface mount package (VSMP) assembly 10 having a built-in heat sink. For the sake of clarity, the reference numbers for elements of the prior art VSMP assembly 1 of FIGS. 1 and 2 will be used to reference the same elements in the specific embodiments. The semiconductor chip 6 may, in some embodiments, have a high power consumption, similar to the power consumption of a SLDRAM device although this is not necessary to the practice of the invention. Metallic wires 7 connect the semiconductor chip 6 to the lead terminals 2. The lead terminals 2 provide a path for input and output signals to and from the semiconductor chip 6 during operation.
  • Referring to FIGS. 3, 4A, and [0029] 4B, the VSMP assembly 10 also includes a heat sink 12. The heat sink 12 is a molded structure and is made of a thermally conductive material, e.g., aluminum filled with polymer, copper or gold filled with fused silica or boron nitrate. The heat sink 12 has an internal and any external portions 13, 14 with respect to the housing 4. A central area 13′ of the internal portion 13 attaches to the backside of the semiconductor chip 6 through a lead on chip (LOC) tape 15. The LOC tape is thermally conductive, but not electrically conductive. The plastic housing 4 encapsulates the chip 6 and internal portion 13. The external portions 14 of the heat sink 12, and the lead terminals 2 protrude from the housing 4. The heat sink 12 is permanently mounted in the VSMP assembly.
  • Referring to FIG. 3, the [0030] VSMP assembly 10 is a rectangular parallelepiped from which the external portions 14 of the heat sink 12 protrude. The rectangular parallelepiped has front/back face surfaces “z” defined by the length “a” and height “c,” and top/bottom and left/right end surfaces “t,” “x,” and “y” defined by the length “a” and width “b” and the height “c” and width “b,” respectively. The heat sink 12 protrudes through the narrow end surfaces “y” and/or “t” so that plastic housing 4 can secure the heat sink 12 more firmly than if it protruded through either the front or back faces z.
  • Referring to FIGS. 3, 4A, and [0031] 4B, the exterior portions 14 of the heat sink 12 include a continuation 16A of the internal portion 13 and a radiating fin structure 16B comprising a plurality of posts 17. The continuation 16A leaves the housing 4 through right/left end surfaces “y” and provides a lateral clearance between the fin structure 16B and the housing 4. The fin structure 16B extends perpendicular to the front face surface “z.” The form of the fin structure 16B depends on implementation specific constraints.
  • Referring to FIG. 3, the [0032] posts 17 of the fin structure 16B can take a variety of lengths and shapes, e.g., rectangular, circular, triangular, and configurations, e.g., hollow or solid. The continuation 16A may also be wider than the height “c” of the housing 4 to provide a greater area for the fin structure 16B.
  • The plastic housing [0033] 4 can have a variety of shapes, e.g., round, square, elliptical, etc. In such embodiments, the heat sink 12, terminals 2, and supports 3 protrude from the smaller area surfaces of the plastic housing 4.
  • Referring to FIG. 4A, the [0034] semiconductor chip 6 generates heat during normal operation. The heat will flow from the chip 6 to the conductive LOC tape 15 and into the heat sink 12, because the LOC tape 15 provides for good heat transfer. Nevertheless, the LOC tape 15 electrically insulates the heat sink 12 from the chip 6. The LOC tape 15 may be as thin as about ten millionths of an inch. The posts 17 aid in dissipating the heat from the external portion 14 of the heat sink 12. Air convection (not shown) may also assist in cooling the external portions 14 of the heat sink.
  • Referring to FIGS. 3, 4A, and [0035] 4B, the shape and dimensions of the external portion 14 of the heat sink 12 depend on the specific details of the implementation, e.g., the power and size of the semiconductor chip 6 and the packing on a circuit board. Preferably, the shape and size of the heat sink 12 keeps the semiconductor chip 6 at a temperature of between about 70 to 120 degrees centigrade during normal operation.
  • FIG. 5A illustrates an embodiment of a [0036] VSMP assembly 20. First and second fin structures 22, 24 of a heat sink 26 extend from the left and right end surfaces “y” and are directed approximately perpendicular to the front and back face surfaces “z” of the plastic housing 4. The fin structures 22, 24 include a plurality of posts 27A-27E that interlace to allow for dense packing of VSMP assemblies 20. Two VSMP assemblies 20 can be adjacent on a circuit board, because the fins 27B and 27D of a first one of the VSMP assemblies 20 would fit between the fins 27A, 27C, and 27E of a second one of the VSMP assemblies 20.
  • FIG. 5B illustrates a [0037] VSMP assembly 30 having an alternate fin structures 32, 34 that may provide higher heat dissipation. The interlinking arms 38 provide an additional larger external surface for heat dissipation. Additionally, the arms 38 provide a cage structure to protect the housing 4 from other adjacent devices (not shown). The housing 4 may be completely caged by the arms 38. The fingers 27A, 27C, and 27E are complementarily positioned with respect to the fingers 27B and 27D. Consequently, an adjacent VSMP assembly 30, can be packed on a circuit board (not shown) so that the fins 27A-27E interlace. In some embodiments the arms 38 may be attached, e.g., soldered or otherwise mechanically fixed, to the circuit board or to other VSMP assemblies (both not shown).
  • FIGS. 7A and 7B illustrate an embodiment in which an additional [0038] internal heat sink 50 of a thermally conductive material such as aluminum or copper mounts to the side of the chip 6, which is opposite an internal portion 43 of a heat sink 42. The heat sink 42 has external and internal portions 44, 43. Again, LOC tape 15 attaches the internal heat sink 50 to the semiconductor chip 6. The internal heat sink 50 further increases the overall capacity for heat dissipation. Heat transferred to the internal heat sink 50 would be dissipated by passing through the plastic housing 4.
  • The [0039] heat sink 12 of FIGS. 3, 4A, and 4B forms means for transferring heat. The heat sinks 26 of FIGS. 5A and 5B with alternate fin structures 22, 24 and 32, 34 form alternate means for transferring heat. Finally, the heat sink 42 of FIGS. 6, 7A, and 7B forms another means for transferring heat. Each means for transferring heat comprises portions of a heat sink internal and external to the plastic housing 4.
  • FIG. 8 is a flowchart illustrating a [0040] process 60 for manufacturing the VSMP assemblies 10, 20, 30, 40 of FIGS. 3, 4A, 4B, and 7. At block 62, a semiconductor chip is provided. At block 64, a heat sink structure is molded to a three dimensional shape accommodating the operational characteristics of the semiconductor chip 6. The molding step of block 64 may produce a final form for the heat sink 12, 42. The three dimensional shape may depend on the packing of employed for VSMP assemblies.
  • At [0041] block 66, a thermally conductive material is attached between one surface of the semiconductor chip 6 and an internal portion of the heat sink 12, 42. In one embodiment, the attachment process employs LOC tape 15 and entails several steps. First, the LOC tape 15, heat sink 12, 42, and chip 6 are positioned. Next, the LOC tape 15, heat sink 12, 42, and chip 6 are heated to a temperature sufficient to make the LOC tape 15 pliable. Next, external pressure is used to compress and seal the LOC tape 15 between the heat sink 12, 42 and semiconductor chip 6. LOC tape 15 has a thermal conductivity similar to that of SILOXANE®, produced by 3M®, of conductive epoxy or of silicon gel. After compressing the LOC tape 15, one surface of the semiconductor chip 6 is less than about 0.0001 inches from the internal portions 13, 43 of the heat sinks 12, 42 of FIGS. 4A or 7A, respectively.
  • After the [0042] semiconductor chip 6 and the heat sink 12, 42 are secured together, the semiconductor chip 12 is electrically connected to the lead terminals 2 by the metallic wires 7. Next, a jig (not shown) is used to hold the supporting terminals 3, the heat sink 12, 42 and the chip 6 in a mold.
  • At [0043] block 68, a liquid plastic resin is injected into the mold to form the plastic housing 4, which encapsulates, i.e. surrounds, the semiconductor chip 6 and the internal portion of the heat sink 12, 42, i.e. binding the heat sink 12, 42 strongly to the housing 4. A material such as epoxy, poly-resin, or silicon polymer may be used to form the housing 4. The resulting plastic VSMP assembly 10, 20, 30, 40 may be thin, i.e. have a thickness of about 1.2 mm. Finally, the VSMP 10, 20, 30, 40 assembly is mounted to a circuit board (not shown). The heat sink 12, 42 protrudes from an end or narrower surface of the housing 4.
  • Illustrative embodiments of the invention are described above. In the interest of clarity, not all features of an actual implementation are described in this specification. It will of course be appreciated that in the development of any such actual embodiment, numerous implementation-specific decisions must be made to achieve the developers' specific goals, such as compliance with system-related and business-related constraints, which will vary from one implementation to another. Moreover, it will be appreciated that such a development effort might be complex and time-consuming, but would nevertheless be a routine undertaking for those of ordinary skill in the art having the benefit of this disclosure. [0044]

Claims (27)

What is claimed is:
1. A semiconductor device assembly, comprising:
a semiconductor chip;
a heat sink having internal and external portions, the internal portion being thermally coupled to one surface of the semiconductor chip; and
a housing encapsulating the semiconductor chip and the internal portion.
2. The assembly of
claim 1
, further comprising a thermally conductive material that mechanically couples said surface of the semiconductor chip and said internal portion.
3. The assembly of
claim 1
, wherein said heat sink extends through a first end surface of said housing.
4. The assembly of
claim 1
, wherein said heat sink extends through a second end surface of the housing, the second end surface being opposite the first end surface.
5. The assembly of
claim 1
, wherein said exterior heat sink portion includes a fin-shaped structure having at least two adjacent posts extending away from an adjacent surface of said housing.
6. The assembly of
claim 5
, further including a third post directed opposite said two posts, said at least two posts being complementarily positioned to said third post to enable interlacing of adjacent assemblies.
7. The assembly of
claim 1
, wherein an extension of the external portion extends adjacent a front face of said housing.
8. The assembly of
claim 5
, wherein the extension connects the external portion protruding from opposite end surfaces of said housing.
9. The assembly of
claim 1
, wherein said heat sink is a molded structure.
10. The assembly of
claim 1
, wherein material of the housing passes through integrity holes in the internal portion of the heat sink.
11. The assembly of
claim 10
, wherein said metallic material comprises one of copper, aluminum, and gold.
12. The assembly of
claim 1
further including a second heat sink thermally coupled to a second surface of said semiconductor chip.
13. The assembly of
claim 1
, wherein said semiconductor chip is SLDRAM.
14. The assembly of
claim 1
, wherein the housing comprises molded plastic.
15. The assembly of
claim 1
, wherein the heat sink is immovably fixed into the housing.
16. A vertical surface mount package (VSMP) assembly, comprising:
a semiconductor chip;
means for transferring heat;
a thermally conductive material coupling said semiconductor chip to said means for transferring heat; and
a housing encapsulating an internal portion of said means for transferring heat and said semiconductor chip.
17. The VSMP assembly of
claim 16
, wherein said means for transferring heat passes through a first surface of the housing, said first surface having a smaller area than a second surface of the housing.
18. The VSMP assembly of
claim 17
, wherein said means for transferring heat includes a molded piece of metal.
19. The VSMP assembly of
claim 16
, further including an internal heat sink thermally coupled to a side of the chip opposite to said thermally conductive plate.
20. A process of fabricating a semiconductor device assembly, comprising:
providing a semiconductor chip;
providing a heat sink having internal and external portions;
mechanically attaching a face of said chip to said internal portion; and
applying an encapsulating material around the semiconductor chip and the internal portions.
21. The process as set forth in
claim 20
, wherein the act of providing a heat sink includes molding material to form the heat sink.
22. The process of
claim 20
, further including applying a thermally conductive material between said semiconductor chip and said internal portion and applying pressure to compress said thermally conductive material.
23. The process of
claim 22
, wherein said act of applying pressure further includes heating the thermally conductive material.
24. The process of
claim 20
, wherein the act of applying an encapsulating material forms a housing, the heat sink protruding from at least one end surface of the housing.
25. The process of
claim 20
, wherein the act of attaching a thermally conductive material attaches the thermally conductive material to one surface of the semiconductor chip.
26. The process of
claim 20
, wherein the act of attaching places one surface of the semiconductor chip less than 0.0001 inches from a part of the internal portion of the heat sink.
27. The process of
claim 20
, wherein the act of attaching forms a thermal connection between the heat sink and the semiconductor chip and electrically insulates the semiconductor chip from the heat sink.
US09/780,377 1998-09-03 2001-02-12 Semiconductor device having a built-in heat sink and process of manufacturing same Expired - Fee Related US6350634B2 (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6706565B2 (en) 1998-10-01 2004-03-16 Micron Technology, Inc. Methods of forming an integrated circuit device
US20070177356A1 (en) * 2006-02-01 2007-08-02 Jeffrey Panek Three-dimensional cold plate and method of manufacturing same
US20130334680A1 (en) * 2012-06-15 2013-12-19 Medtronic, Inc. Wafer level packages of high voltage units for implantable medical devices and corresponding fabrication methods
US9496241B2 (en) 2012-06-15 2016-11-15 Medtronic, Inc. Integrated circuit packaging for implantable medical devices

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7138711B2 (en) * 2002-06-17 2006-11-21 Micron Technology, Inc. Intrinsic thermal enhancement for FBGA package
US7745927B2 (en) * 2004-06-29 2010-06-29 Agere Systems Inc. Heat sink formed of multiple metal layers on backside of integrated circuit die
US20080054449A1 (en) * 2006-08-31 2008-03-06 Infineon Technologies Ag Semiconductor component with cooling apparatus
TWI303973B (en) * 2006-09-06 2008-12-01 Delta Electronics Inc Heat sink fastening device and manufacturing method thereof
JP2008071987A (en) * 2006-09-15 2008-03-27 Shinko Electric Ind Co Ltd Electronic component package, and electronic component device
US7800219B2 (en) * 2008-01-02 2010-09-21 Fairchild Semiconductor Corporation High-power semiconductor die packages with integrated heat-sink capability and methods of manufacturing the same
US9355985B2 (en) * 2014-05-30 2016-05-31 Freescale Semiconductor, Inc. Microelectronic packages having sidewall-deposited heat spreader structures and methods for the fabrication thereof
US9960127B2 (en) 2016-05-18 2018-05-01 Macom Technology Solutions Holdings, Inc. High-power amplifier package
US10134658B2 (en) 2016-08-10 2018-11-20 Macom Technology Solutions Holdings, Inc. High power transistors
DE102016121629A1 (en) * 2016-11-11 2018-05-17 Innogy Se Charging station foundation and charging station

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5175612A (en) 1989-12-19 1992-12-29 Lsi Logic Corporation Heat sink for semiconductor device assembly
US5216283A (en) 1990-05-03 1993-06-01 Motorola, Inc. Semiconductor device having an insertable heat sink and method for mounting the same
JP2816244B2 (en) * 1990-07-11 1998-10-27 株式会社日立製作所 Stacked multi-chip semiconductor device and semiconductor device used therefor
JP2971637B2 (en) * 1991-06-17 1999-11-08 富士通株式会社 Semiconductor device
JPH0677354A (en) 1992-08-24 1994-03-18 Hitachi Ltd Semiconductor device
JPH07335980A (en) * 1994-06-07 1995-12-22 Fuji Electric Co Ltd Semiconductor laser device
US5801442A (en) * 1996-07-22 1998-09-01 Northrop Grumman Corporation Microchannel cooling of high power semiconductor devices
US6134111A (en) * 1998-04-15 2000-10-17 Micron Technology, Inc. Vertical surface mount apparatus with thermal carrier

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6706565B2 (en) 1998-10-01 2004-03-16 Micron Technology, Inc. Methods of forming an integrated circuit device
US6949838B2 (en) * 1998-10-01 2005-09-27 Micron Technology, Inc. Integrated circuit device
US20070177356A1 (en) * 2006-02-01 2007-08-02 Jeffrey Panek Three-dimensional cold plate and method of manufacturing same
US20080296256A1 (en) * 2006-02-01 2008-12-04 Cool Shield Inc. Three-dimensional cold plate and method of manufacturing same
US20130334680A1 (en) * 2012-06-15 2013-12-19 Medtronic, Inc. Wafer level packages of high voltage units for implantable medical devices and corresponding fabrication methods
US9496241B2 (en) 2012-06-15 2016-11-15 Medtronic, Inc. Integrated circuit packaging for implantable medical devices
US11213690B2 (en) * 2012-06-15 2022-01-04 Medtronic, Inc. Wafer level packages of high voltage units for implantable medical devices

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