US20010023090A1 - Thin film transistor and a fabricating method thereof - Google Patents
Thin film transistor and a fabricating method thereof Download PDFInfo
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- US20010023090A1 US20010023090A1 US09/828,156 US82815601A US2001023090A1 US 20010023090 A1 US20010023090 A1 US 20010023090A1 US 82815601 A US82815601 A US 82815601A US 2001023090 A1 US2001023090 A1 US 2001023090A1
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- 238000000034 method Methods 0.000 title claims abstract description 26
- 239000010409 thin film Substances 0.000 title claims abstract description 23
- 238000002161 passivation Methods 0.000 claims abstract description 62
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 238000000059 patterning Methods 0.000 claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 claims abstract description 14
- 229920002120 photoresistant polymer Polymers 0.000 claims description 58
- 239000012535 impurity Substances 0.000 claims description 31
- 229910052751 metal Inorganic materials 0.000 claims description 27
- 239000002184 metal Substances 0.000 claims description 27
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 21
- 239000000126 substance Substances 0.000 claims description 21
- 238000000151 deposition Methods 0.000 claims description 20
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 13
- 238000000206 photolithography Methods 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 10
- 150000002500 ions Chemical class 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 230000003213 activating effect Effects 0.000 claims description 6
- 238000005468 ion implantation Methods 0.000 claims description 6
- 238000005224 laser annealing Methods 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 4
- 229910001887 tin oxide Inorganic materials 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims 5
- 239000010410 layer Substances 0.000 description 178
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 229910052814 silicon oxide Inorganic materials 0.000 description 12
- 229910052581 Si3N4 Inorganic materials 0.000 description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 10
- 239000011229 interlayer Substances 0.000 description 7
- 230000003647 oxidation Effects 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
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- 229910052785 arsenic Inorganic materials 0.000 description 4
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- 230000008021 deposition Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
- H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78636—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with supplementary region or layer for improving the flatness of the device
Definitions
- the present invention relates to a thin film transistor and a fabricating method thereof wherein a source/drain region and a gate electrode are formed from the same layer.
- a polycrystalline silicon TFT has a high mobility of electrons and holes and can be used as a CMOS TFT. Accordingly, a liquid crystal display (hereinafter abbreviated LCD) having polycrystalline silicon TFTs has a structure such that both a driver and a pixel array are formed on a glass substrate.
- LCD liquid crystal display
- TFTs having a lightly doped drain (hereinafter abbreviated LDD) structure, an offset structure, or the like have been used in the related art.
- LDD lightly doped drain
- FIG. 1 shows a cross-sectional view of a TFT according to the related art.
- a buffer oxidation layer 13 is formed on an insulated substrate 11
- an active layer 15 of polycrystalline silicon is formed on the buffer oxidation layer 13 .
- a gate insulating layer 17 and a gate electrode 19 are formed, wherein the channel region is in the middle of the active layer 15 and the length of the gate electrode 19 is shorter than that of the gate insulating layer 17 .
- the sides of the active layer 15 extending beyond the gate electrode 19 are doped with n- or p-type impurities.
- the region of the active layer that also extends beyond gate insulating layer 17 becomes a source region 21 and a drain region 22 , doped heavily with impurities.
- the portion of the active layer that lies between the LDD regions becomes a channel region 15 .
- An insulating interlayer 25 of silicon oxide or silicon nitride is formed over the entire surface of the above structure.
- First contact holes 27 exposing the source and drain regions 21 and 22 are formed in the insulating interlayer 25 .
- Source and drain electrodes 29 and 30 connected electrically to the source and drain regions 21 and 22 , are then formed in the first contact holes 27 .
- a passivation layer 31 consisting of silicon oxide is formed on the insulating interlayer 25 to cover the source and drain electrodes 29 and 30 .
- a second contact hole 33 exposing the drain electrode 30 is then formed in the passivation layer 31 .
- a pixel electrode 35 is connected electrically to the exposed drain electrode 22 through the second contact hole 33 formed in the passivation layer 31 .
- the pixel electrode 35 is made of a substance which is transparent and electrically conductive such as indium-tin oxide (hereinafter abbreviated ITO), tin oxide (hereinafter abbreviated TO), or the like.
- FIGS. 2A to 2 E show cross-sectional views of the fabrication of the TFT according to a related art.
- a buffer oxidation layer is formed on a transparent insulated substrate 11 , such as glass or and the like, by depositing silicon oxide by chemical vapor deposition (hereinafter abbreviated CVD).
- An active layer 15 is formed by deposition of amorphous silicon on the buffer oxidation layer 13 , followed by dehydration and crystallization.
- the buffer oxidation layer 13 of this embodiment is then annealed by a laser, thereby preventing the active layer 15 from being penetrated by the impurities in the insulated substrate 11 .
- the active layer 15 is patterned by photolithography so that the photoresist remains on a predetermined portion of the buffer oxidation layer 13 .
- the active layer 15 may be formed by depositing polycrystalline silicon at low temperature instead of by deposition, dehydration and crystallization of amorphous silicon.
- an insulating substance such as silicon oxide, silicon nitride, or the like, is deposited on the buffer oxidation layer 13 by CVD to cover the active layer 15 .
- metal such as aluminum (Al) or molybdenum (Mo), or the like, is deposited on the insulating substance.
- a photoresist pattern 20 remaining on a portion corresponding to the middle part of the active layer 15 is defined by coating the metal with photoresist and by exposing and developing the photoresist.
- a gate electrode 19 and a gate insulating layer 17 are formed by patterning the metal and the insulating substance using the photoresist pattern as a mask.
- the gate electrode 19 and the gate insulating layer 17 are formed by anisotropically etching the metal and the insulating substance to expose the active layer 15 and by selectively overetching the metal to expose both side surfaces of the gate insulating layer 17 .
- the length of the gate electrode 19 is shorter than that of the gate insulating layer 17 .
- the photoresist pattern 20 is removed, and source and drain regions 21 and 22 and a lightly doped region 23 are formed by doping the active layer 15 with n-type impurities such as phosphorus (P), arsenic (As), or the like, using of the gate electrode 19 as a mask, with high dose and low energy ion implantation and with low dose and high energy ion implantation, respectively.
- the source and drain regions 21 and 22 are formed on exposed portions of the active layer 15 that extend beyond the gate insulating layer 17 , while the lightly doped region 23 is formed where the gate insulating layer 17 overlaps the active layer 15 .
- an insulating interlayer 25 is formed by depositing insulating substance, such as silicon oxide, silicon nitride, or the like, on the entire surface of the above structure.
- insulating substance such as silicon oxide, silicon nitride, or the like.
- first contact holes 27 exposing the source and drain regions 21 and 22 are formed by removing predetermined portions of the insulating interlayer 25 by conventional photolithography and etching.
- Source and drain electrodes 29 and 30 are formed by patterning the metal to remain inside the first contact holes 27 by photolithography and etching.
- a passivation layer 31 is formed on the insulating interlayer 25 by CVD of an insulating substance such as silicon oxide, silicon nitride, or the like, to cover the source and drain electrodes 29 and 30 . Then, a second contact hole 33 , exposing the drain electrode 30 , is formed by removing a predetermined portion of the passivation layer 31 by photolithography and etching.
- an insulating substance such as silicon oxide, silicon nitride, or the like
- a pixel electrode 35 connected electrically to the exposed drain electrode 22 through the second contact hole 33 , is formed on the passivation layer 31 by depositing and patterning a substance which is transparent and electrically conductive.
- a substance such as ITO or the like, may be used.
- the TFT according to the related art has a top-gate structure because (1) the gate electrode is formed to expose both sides of the gate insulating layer, (2) the source and drain regions are formed in the exposed portions of the active layer with no gate insulating layer and (3) the lightly doped regions are formed in another portion overlapped with the gate insulating layer by implanting impurities into the active layer using the gate electrode as a mask. Accordingly, the TFT requires 6 masks for patterning the active layer, the gate insulating layer, the first contact holes, the source and drain electrodes, the second contact hole and the pixel electrode.
- a problem in manufacturing a TFT according to the related art is that it requires a complicated process, because the source/drain electrodes and the gate electrode are formed using different masks. The process, therefore, becomes complicated due to the increased number of masks and the planarization degree decreases.
- the present invention is directed to a thin film transistor and a fabricating method thereof that substantially obviates one or more of the problems due to limitations and disadvantages of the related art.
- the object of the present invention is to provide a TFT which improves the degree of planarization, because source/drain electrodes and a gate electrode are formed by patterning the same layer.
- Another object of the present invention is to provide a method of fabricating a TFT which reduces the steps of fabrication by patterning a gate electrode and source/drain electrodes with a single mask.
- the present invention includes an insulated substrate which is transparent; a source electrode and a drain electrode formed on the insulated substrate, the source and drain electrodes separated each other; a gate electrode formed between the source and drain electrodes on the insulated substrate; a gate insulating layer covering the source and drain electrodes and the gate electrode on the gate insulating layer; an active layer on the gate insulating layer wherein source and drain regions are formed at both ends of the active layer corresponding to the gate electrode and wherein a channel region is formed between the source and drain regions; a passivation layer on the gate insulating layer, the passivation layer covering the active layer; first and second contact holes exposing the source and drain regions and the source and drain electrodes, respectively; a first wire on a predetermined part of the passivation layer, the first wire electrically connecting the source region to the source electrode through the first contact hole; and a second wire on another predetermined part of the passiva
- the present invention includes the steps of depositing a metal on an insulated substrate which is transparent; forming source and drain electrodes and a gate electrode by patterning the metal wherein the source and drain electrodes and the gate electrode are separated one another electrically; forming a gate insulating layer on the insulated substrate, wherein the gate insulating layer covers the gate electrode and the source and drain electrodes; forming an active layer between the source and drain electrodes on the gate insulating layer; coating the gate insulating layer and the active layer with photoresist; defining a photoresist pattern by exposing the active layer by back exposure through the substrate and subsequent development of the photoresist; forming source and drain regions by doping the exposed portion of the active layer with impurities using the photoresist pattern as a mask; removing the photoresist pattern; forming a passivation layer on the gate insulating layer; forming first contact holes exposing the source and drain regions and second contact holes exposing the source and drain electrodes by patterning the passiva
- the present invention includes the steps of depositing a metal on an insulated substrate which is transparent; forming source and drain electrodes and a gate electrode by patterning the metal using a single mask, wherein the source and drain electrodes and the gate electrode are separated from one another electrically; forming a gate insulating layer on the insulated substrate, wherein the gate insulating layer covers the gate electrode and the source and drain electrodes; forming an amorphous silicon layer on the gate insulating layer; coating the amorphous silicon layer with photoresist; defining a photoresist pattern that remains on regions corresponding to the gate electrode and the source and drain electrodes by back exposure through the substrate and development of the photoresist; doping exposed portions of the amorphous silicon layer with a heavy dose of impurity ions; removing the photoresist pattern; forming an active layer by crystallizing the amorphous silicon layer and forming source and drain regions by activating the impurity ions; forming a passivation layer on the
- the present invention includes the steps of depositing metal on an insulated substrate which is transparent; forming source and drain electrodes and a gate electrode by patterning the metal with a single mask, wherein the source and drain electrodes and the gate electrode are separated from one another electrically; forming a gate insulating layer on the insulated substrate, wherein the gate insulating layer covers the gate electrode and the source and drain electrodes; forming an active layer between the source and drain electrodes on the gate insulating layer; coating the gate insulating layer and the active layer with photoresist; defining a photoresist pattern so that photoresist remains on regions corresponding to the source and drain electrodes and the gate electrode by exposure and development of the photoresist; forming first contact holes that expose both ends of the active layer and second contact holes exposing the source and drain electrodes using the photoresist pattern as a mask; exposing a portion of the passivation layer which extends beyond the gate electrode by back exposure through the substrate and development using the gate electrode and the source
- FIG. 1 shows a cross-sectional view of a TFT according to a related art
- FIGS. 2A to 2 E show cross-sectional views of fabricating a TFT according to a related art
- FIG. 3 shows a cross-sectional view of a TFT according to the present invention
- FIGS. 4A to 4 E show cross-sectional views of stages of fabrication of a TFT according to a first embodiment of the present invention
- FIGS. 5A to 5 B show cross-sectional views of stages of fabrication of a TFT according to a second embodiment of the present invention.
- FIGS. 6A to 6 C show cross-sectional views of stages of fabrication of a TFT according to a third embodiment of the present invention.
- FIG. 3 shows a cross-sectional view of a TFT according to the present invention.
- a gate electrode 33 , source and drain electrodes 35 and 36 are formed preferably on a transparent insulated substrate 31 of glass, or the like.
- the electrodes have a thickness in the range of about 1000-5000 angstroms.
- the electrodes are electrically separated from one another electrically along a first axis that runs parallel to the surface of the substrate and approximately through the middle of the electrodes.
- the gate electrode 33 , the source and drain electrodes 35 and 36 are formed by using a single mask to pattern a single layer of metal, such as Al, Mo, or the like. Not shown in the drawing, gate lines connected to the gate electrode 33 and the source electrode 35 have common bus shapes.
- a gate insulating layer 39 is formed on the insulated substrate 31 to cover the gate electrode 33 .
- An active layer 41 is formed on the gate insulating layer 39 in a region overlying the gate electrode 33 .
- the gate insulating layer 39 is an insulating substance, such as silicon oxide, silicon nitride, or the like, and has a thickness in the range of about 500-3000 angstroms.
- the active layer 41 of polycrystalline silicon has a thickness of about 30-1000 angstroms.
- a source region 45 and a drain region 46 doped heavily with n- or p-type impurities are formed at each end of the active layer 41 that preferably extends beyond the region where the active layer overlays the gate electrode 33 .
- the rest of the active layer 41 corresponding to the region that overlays the gate electrode 33 , is not doped with impurities, and thus becomes a channel region.
- a passivation layer 47 having a thickness of about 3000-10000 angstroms is formed by depositing an insulating substance, such as silicon oxide, silicon nitride, or the like, on the entire surface of the above-mentioned structure.
- First contact holes 49 that expose the source and drain regions 45 and 46 are formed by removing the gate insulating layer 39
- second contact holes 51 that expose the source and the drain electrodes 35 and 36 are formed by removing both the gate insulating layer 39 and the passivation layer 47 .
- a first wire 53 electrically connecting the source region 45 to the source electrode 35 and a second wire 55 electrically connecting the drain region 46 to the drain electrode 36 are formed on predetermined portions of the passivation layer 47 through the first and second contact holes 49 and 51 , respectively.
- the first and second wires 53 and 55 are made of electrically-conductive and transparent substance, such as ITO, TO, or the like, and the second wire 55 is also used as a pixel electrode.
- the source and drain electrodes 35 and 36 covered with the gate insulating layer 39 are formed on the insulated substrate 31 and are connected electrically to the source and drain regions 45 and 46 by the first and second wires 53 and 55 , respectively, through the first and second contact holes 49 and 51 .
- the TFT of the BBC structure improves planarization of the layers since the gate electrode 33 is formed from the same layer that is patterned to form the electrodes 33 , 35 and 36 .
- lightly doped regions are formed between the channel region and source/drain regions of the active layer.
- LDD regions lightly doped regions
- FIGS. 4A to 4 E show cross-sectional views of TFT fabricating steps according to a first embodiment of the present invention.
- metal such as Al, Mo, or the like
- a transparent insulated substrate 31 of glass, or the like at a thickness of about 1000-5000 angstroms by sputtering or CVD.
- a gate electrode 33 and source/drain electrodes 35 and 36 are formed by patterning the deposited metal with a single photolithography mask.
- the gate electrode 33 lies between the source and drain electrodes 35 and 36 and the three electrodes are separated electrically from one another.
- gate lines connected to the gate electrode 33 and the source electrode 35 have bus shapes.
- a gate insulating layer 39 is formed on the insulated substrate 31 to cover the gate electrode 33 by depositing an insulating substance, such as silicon oxide, silicon nitride, or the like, at a thickness in the range of about 500-3000 angstroms.
- An active layer 41 is preferably formed by dehydration and laser annealing of the amorphous silicon that was deposited on the gate insulating layer 39 in a thickness range of about 300-1000 angstroms. Alternatively, other crystallization methods known to one of ordinary skill in the art may also be, used. Accordingly, when laser annealing is carried out, the gate insulating layer 39 prevents impurities in the insulated substrate 31 from diffusing into the active layer 41 .
- the active layer 41 is photolithographically patterned to remain between the source and drain electrodes 35 and 36 in the gate insulating layer 39 .
- the active layer 41 may be formed by depositing polycrystalline silicon at low temperature instead of by deposition, dehydration and laser annealed crystallization of amorphous silicon.
- the gate insulating layer 39 is coated with photoresist to cover the active layer 41 .
- a photoresist pattern 43 is defined by back exposure and development using the gate, source and drain electrodes 33 , 35 , and 36 as masks. “Back exposure”, as used herein, means that the photolithography light source is beneath the transparent substrate 31 and shines through it using the electrodes as a mask. Using this procedure, the photoresist pattern 43 remains just on the regions that overlay the electrodes 33 , 35 and 36 , but regions of the active layer 45 , 46 between the gate electrode 33 and the source/drain electrodes 35 and 36 are free of photoresist.
- Source and drain regions 45 , 46 are formed by doping the exposed parts of the active layer 41 with n-type impurities, such as P, As, or the like, or p-type impurities such as B, or the like, by heavy dose ion implantation using the photoresist pattern 43 as a mask. In this case, the remaining portion of the active layer 41 , which corresponds to the gate electrode 33 and which is not doped with impurities, becomes a channel region.
- n-type impurities such as P, As, or the like
- p-type impurities such as B, or the like
- a passivation layer 47 having a thickness of about 3000-10000 angstroms is formed on the gate insulating layer 39 by CVD deposition of an insulating substance, such as silicon oxide, silicon nitride, or the like, to cover the active layer 41 .
- First contact holes 49 that expose the source and drain regions 45 and 46 and second contact holes 51 that expose the source and drain electrodes 35 and 36 are formed by photolithography and anisotropic etching.
- the first and second contact holes 49 and 51 are formed by a single etch step, wherein the first contact holes 49 are formed by removing the passivation layer 47 and the second contact holes 51 are formed by removing the passivation layer 47 and the gate insulating layer 39 .
- the etching to form the second contact holes 51 after the passivation layer 47 has been removed, only the gate insulating layer 39 is etched, because the gate insulating layer 39 has a faster etching rate than the polysilicon in the source and drain regions 45 and 46 .
- Electrically-conductive and transparent substance such as ITO, TO, or the like, are deposited on the passivation layer 47 to connect the source and drain regions 45 and 46 to the source and drain electrodes 35 and 36 through the first and second contact holes 49 and 51 .
- a first wire 53 electrically connecting the source region 45 to the source electrode 35 and a second wire 55 electrically connecting the drain region 46 to the drain electrode 36 are formed on predetermined portions of the passivation layer 47 through the first and second contact holes 49 and 51 , respectively, by patterning the electrically-conductive and transparent substance by photolithography.
- the first and second wires are separated from one another electrically and the second wire 55 connecting the drain region 46 to the drain electrode 36 is also used as a pixel electrode.
- FIGS. 5A to 5 B show cross-sectional views of certain stages of fabrication of a TFT according to a second embodiment of the present invention.
- a gate insulating layer 39 having a thickness of about 500-3000 angstroms is formed by CVD of an insulating substance, such as silicon oxide, silicon nitride, or the like, on the insulated substrate 31 to cover the source and drain electrodes 35 and 36 .
- an amorphous silicon layer 37 having a thickness of about 300-1000 angstroms is formed on the gate insulating layer 39 by CVD.
- the amorphous silicon layer 37 is coated with photoresist.
- a photoresist pattern 43 is defined by back exposure and development using the gate, source and drain electrodes 33 , 35 , and 36 as masks. In this case, the photoresist pattern 43 remains only on the regions overlying the electrodes 33 , 35 and 36 but the amorphous silicon layer 37 between the gate electrode 33 and the source/drain electrodes 35 and 36 is free of photoresist.
- Impurity-ion implanted regions 38 are formed by doping the photoresist-free regions of the amorphous silicon layer 37 with n-type impurities, such as P, As, or the like, or p-type impurities, such as B, or the like, by heavy dose ion implantation using the photoresist pattern 43 as a mask.
- n-type impurities such as P, As, or the like
- p-type impurities such as B, or the like
- the photoresist pattern is removed.
- An active layer 41 is formed by dehydration and laser annealing of the amorphous silicon layer 37 and source and drain regions 45 and 46 are formed by activating the impurity ions in the ion implanted regions 38 .
- the gate insulating layer 39 prevents impurities in the insulated substrate 31 from diffusing into the active layer 41 where the source and drain electrodes 35 and 36 lie.
- the active layer 41 is patterned to remain only between the source and drain electrodes 35 and 36 in the gate insulating layer 39 by photolithography.
- the remaining active layer 41 between the source and drain electrodes 35 and 36 which overlays the gate electrode 33 , and which is not doped with impurities, becomes a channel region.
- the entire process becomes simplified because the crystallization of the active layer by laser annealing and the activation of the ion-implanted impurities are carried out simultaneously.
- FIGS. 6A to 6 C show cross-sectional views of stages in the fabrication of a TFT according to a third embodiment of the present invention.
- a passivation layer 47 having a thickness of about 3000-10000 angstroms is formed on the gate insulating layer 39 by depositing an insulating substance, such as silicon oxide, silicon nitride, or the like, to cover the active layer 41 by CVD.
- an insulating substance such as silicon oxide, silicon nitride, or the like
- a photoresist pattern 57 is formed by exposure and development after the passivation layer 47 has been coated with photoresist.
- the photoresist pattern 57 is defined to expose predetermined portions of the passivation layer 47 corresponding to the source and drain electrodes 35 and 36 and both ends of the active layer 41 .
- contact holes 49 exposing both ends of the active layer 41 and second contact holes 51 exposing the source and drain electrodes 35 and 36 are formed by photolithography and anisotropic etching using the photoresist pattern 57 as a mask.
- the first and second contact holes 49 and 51 are formed by a single photolithographic etch, wherein the first contact holes 49 are formed by removing the passivation layer 47 and the second contact holes 51 are formed by removing the passivation layer 47 and the gate insulating layer 39 .
- Source and drain regions 45 and 46 and a lightly doped region 59 are formed by doping both ends of the active layer 45 with n-type impurities, such as P, As, or the like, or p-type impurities such, as B, or the like, and by activating the impurities.
- n-type impurities such as P, As, or the like
- p-type impurities such as B, or the like
- the source and drain regions are formed by implanting heavy dose, low energy impurity ions using the passivation layer 47 as a mask and by activating the ions, while the lightly doped region 59 is formed by implanting light dose, high energy impurities where the energy is sufficient to penetrate the passivation layer 39 using the photoresist pattern 57 as a mask and by activating the impurities.
- electrically-conductive and transparent substance such as ITO, TO, or the like, are deposited on the passivation layer 47 to connect the source and drain regions 45 and 46 to the source and drain electrodes 35 and 36 through the first and second contact holes 49 and 51 .
- a first wire 53 electrically connecting the source region 45 to the source electrode 35 and a second wire 55 electrically connecting the drain region 46 to the drain electrode 36 are formed, respectively, by patterning the electrically-conductive and transparent substance by photolithography.
- the first and second wires are separated from one another electrically and the second wire 55 connecting the drain region 46 to the drain electrode 36 is also used as a pixel electrode.
- a TFT according to the present invention has a BBC structure, wherein source/drain electrodes and a gate electrode are formed at the same time by patterning a metal layer and a planarized active layer is formed by placing a gate insulating layer between the gate electrode and the active layer. Source and drain regions formed at both ends of the active layer are connected to source and drain electrodes by first and second wires through first and second contact holes, respectively.
- the present invention improves the degree of planarization, because source/drain electrodes and a gate electrode are formed by patterning the same layer. Further, the present invention reduces the number of fabrication steps by patterning a gate electrode and source/drain electrodes with a single mask.
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Abstract
The present invention relates to a thin film transistor and a fabricating method thereof wherein a source/drain region and a gate electrode are formed in the same layer, which improves the degree of planarization. Because source/drain electrodes and a gate electrode are formed by patterning the same layer with a single mask, the invention reduces the number of fabrication steps. The TFT includes an insulated substrate which is transparent, a source electrode and a drain electrode on the insulated substrate. The source and drain electrodes are separated each other, and a gate electrode is between the source and drain electrodes on the insulated substrate. A gate insulating layer covers the source and drain electrodes and the gate electrodes on the gate insulating layer. An active layer is then formed on the gate insulating layer. Source and drain regions are formed at each end of the active layer corresponding to the gate electrode and a channel region is formed between the source and drain regions. A passivation layer is then formed on the gate insulating layer, wherein the passivation layer covers the active layer, first and second contact holes exposing the source and drain regions and the source and drain electrodes, respectively. A first wire formed on a predetermined part of the passivation layer electrically connects the source region to the source electrode through the first contact hole. A second wire formed on another predetermined part of the passivation layer electrically connects the drain region to the drain electrode through the second contact hole.
Description
- This application claims the benefit of Korean Patent Application No. 98-30868, filed on Jul. 30, 1998, which is hereby incorporated by reference.
- 1. Field of the Invention
- The present invention relates to a thin film transistor and a fabricating method thereof wherein a source/drain region and a gate electrode are formed from the same layer.
- 2. Discussion of Related Art
- Compared to an amorphous silicon thin film transistor (hereinafter abbreviated TFT), a polycrystalline silicon TFT has a high mobility of electrons and holes and can be used as a CMOS TFT. Accordingly, a liquid crystal display (hereinafter abbreviated LCD) having polycrystalline silicon TFTs has a structure such that both a driver and a pixel array are formed on a glass substrate.
- When polycrystalline silicon TFTs are used to form a driver, switching operations of the LCD at a fast frequency is possible because of the characteristics of polycrystalline silicon. However, when polycrystalline silicon TFTs are fabricated on a pixel array in an LCD, the characteristics of the image is deteriorated by the high drain current of the off-states due to the characteristics of polycrystalline silicon.
- More recently, in order to reduce the off-current in a pixel array to a proper level, TFTs having a lightly doped drain (hereinafter abbreviated LDD) structure, an offset structure, or the like, have been used in the related art.
- FIG. 1 shows a cross-sectional view of a TFT according to the related art. Referring to FIG. 1, a
buffer oxidation layer 13 is formed on aninsulated substrate 11, and anactive layer 15 of polycrystalline silicon is formed on thebuffer oxidation layer 13. In a predetermined portion of theactive layer 15, agate insulating layer 17 and agate electrode 19 are formed, wherein the channel region is in the middle of theactive layer 15 and the length of thegate electrode 19 is shorter than that of thegate insulating layer 17. - The sides of the
active layer 15 extending beyond thegate electrode 19 are doped with n- or p-type impurities. The region of the active layer that also extends beyondgate insulating layer 17 becomes asource region 21 and adrain region 22, doped heavily with impurities. The region of the active layer that extends beyond the gate electrode, but not beyond the gate insulating electrode, becomes a lightlydoped region 23 that forms an LDD. The portion of the active layer that lies between the LDD regions becomes achannel region 15. - An
insulating interlayer 25 of silicon oxide or silicon nitride is formed over the entire surface of the above structure.First contact holes 27 exposing the source anddrain regions insulating interlayer 25. Source anddrain electrodes drain regions first contact holes 27. - A
passivation layer 31 consisting of silicon oxide is formed on theinsulating interlayer 25 to cover the source anddrain electrodes second contact hole 33 exposing thedrain electrode 30 is then formed in thepassivation layer 31. Apixel electrode 35 is connected electrically to the exposeddrain electrode 22 through thesecond contact hole 33 formed in thepassivation layer 31. In this case, thepixel electrode 35 is made of a substance which is transparent and electrically conductive such as indium-tin oxide (hereinafter abbreviated ITO), tin oxide (hereinafter abbreviated TO), or the like. - FIGS. 2A to2E show cross-sectional views of the fabrication of the TFT according to a related art. Referring to FIG. 2A, a buffer oxidation layer is formed on a transparent insulated
substrate 11, such as glass or and the like, by depositing silicon oxide by chemical vapor deposition (hereinafter abbreviated CVD). Anactive layer 15 is formed by deposition of amorphous silicon on thebuffer oxidation layer 13, followed by dehydration and crystallization. Thebuffer oxidation layer 13 of this embodiment is then annealed by a laser, thereby preventing theactive layer 15 from being penetrated by the impurities in the insulatedsubstrate 11. Next, theactive layer 15 is patterned by photolithography so that the photoresist remains on a predetermined portion of thebuffer oxidation layer 13. - In the above step, the
active layer 15 may be formed by depositing polycrystalline silicon at low temperature instead of by deposition, dehydration and crystallization of amorphous silicon. - Referring to FIG. 2B, an insulating substance such as silicon oxide, silicon nitride, or the like, is deposited on the
buffer oxidation layer 13 by CVD to cover theactive layer 15. Next, metal such as aluminum (Al) or molybdenum (Mo), or the like, is deposited on the insulating substance. - A
photoresist pattern 20 remaining on a portion corresponding to the middle part of theactive layer 15 is defined by coating the metal with photoresist and by exposing and developing the photoresist. Next, agate electrode 19 and agate insulating layer 17 are formed by patterning the metal and the insulating substance using the photoresist pattern as a mask. - In preferred embodiments, the
gate electrode 19 and thegate insulating layer 17 are formed by anisotropically etching the metal and the insulating substance to expose theactive layer 15 and by selectively overetching the metal to expose both side surfaces of thegate insulating layer 17. Thus the length of thegate electrode 19 is shorter than that of thegate insulating layer 17. - Referring to FIG. 2C, the
photoresist pattern 20 is removed, and source anddrain regions region 23 are formed by doping theactive layer 15 with n-type impurities such as phosphorus (P), arsenic (As), or the like, using of thegate electrode 19 as a mask, with high dose and low energy ion implantation and with low dose and high energy ion implantation, respectively. In this case, the source anddrain regions active layer 15 that extend beyond thegate insulating layer 17, while the lightlydoped region 23 is formed where thegate insulating layer 17 overlaps theactive layer 15. - Referring to FIG. 2D, an
insulating interlayer 25 is formed by depositing insulating substance, such as silicon oxide, silicon nitride, or the like, on the entire surface of the above structure. Next,first contact holes 27 exposing the source anddrain regions insulating interlayer 25 by conventional photolithography and etching. - Metal, such as Al, or the like, is deposited on the
insulating interlayer 25 to contact the source anddrain regions first contact holes 27. Source anddrain electrodes drain regions first contact holes 27 by photolithography and etching. - Referring to FIG. 2E, a
passivation layer 31 is formed on theinsulating interlayer 25 by CVD of an insulating substance such as silicon oxide, silicon nitride, or the like, to cover the source anddrain electrodes second contact hole 33, exposing thedrain electrode 30, is formed by removing a predetermined portion of thepassivation layer 31 by photolithography and etching. - Next, a
pixel electrode 35, connected electrically to the exposeddrain electrode 22 through thesecond contact hole 33, is formed on thepassivation layer 31 by depositing and patterning a substance which is transparent and electrically conductive. For example, a substance such as ITO or the like, may be used. - The TFT according to the related art has a top-gate structure because (1) the gate electrode is formed to expose both sides of the gate insulating layer, (2) the source and drain regions are formed in the exposed portions of the active layer with no gate insulating layer and (3) the lightly doped regions are formed in another portion overlapped with the gate insulating layer by implanting impurities into the active layer using the gate electrode as a mask. Accordingly, the TFT requires 6 masks for patterning the active layer, the gate insulating layer, the first contact holes, the source and drain electrodes, the second contact hole and the pixel electrode.
- A problem in manufacturing a TFT according to the related art is that it requires a complicated process, because the source/drain electrodes and the gate electrode are formed using different masks. The process, therefore, becomes complicated due to the increased number of masks and the planarization degree decreases.
- Accordingly, the present invention is directed to a thin film transistor and a fabricating method thereof that substantially obviates one or more of the problems due to limitations and disadvantages of the related art.
- The object of the present invention is to provide a TFT which improves the degree of planarization, because source/drain electrodes and a gate electrode are formed by patterning the same layer.
- Another object of the present invention is to provide a method of fabricating a TFT which reduces the steps of fabrication by patterning a gate electrode and source/drain electrodes with a single mask.
- Additional features and advantages of the invention will be set forth in the description which follows and in part will be apparent from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
- To achieve these and other advantages and in accordance with the purpose of the present invention, as embodied and broadly described, the present invention includes an insulated substrate which is transparent; a source electrode and a drain electrode formed on the insulated substrate, the source and drain electrodes separated each other; a gate electrode formed between the source and drain electrodes on the insulated substrate; a gate insulating layer covering the source and drain electrodes and the gate electrode on the gate insulating layer; an active layer on the gate insulating layer wherein source and drain regions are formed at both ends of the active layer corresponding to the gate electrode and wherein a channel region is formed between the source and drain regions; a passivation layer on the gate insulating layer, the passivation layer covering the active layer; first and second contact holes exposing the source and drain regions and the source and drain electrodes, respectively; a first wire on a predetermined part of the passivation layer, the first wire electrically connecting the source region to the source electrode through the first contact hole; and a second wire on another predetermined part of the passivation layer, the second wire electrically connecting the drain region to the drain electrode through the second contact hole.
- In another embodiment, the present invention includes the steps of depositing a metal on an insulated substrate which is transparent; forming source and drain electrodes and a gate electrode by patterning the metal wherein the source and drain electrodes and the gate electrode are separated one another electrically; forming a gate insulating layer on the insulated substrate, wherein the gate insulating layer covers the gate electrode and the source and drain electrodes; forming an active layer between the source and drain electrodes on the gate insulating layer; coating the gate insulating layer and the active layer with photoresist; defining a photoresist pattern by exposing the active layer by back exposure through the substrate and subsequent development of the photoresist; forming source and drain regions by doping the exposed portion of the active layer with impurities using the photoresist pattern as a mask; removing the photoresist pattern; forming a passivation layer on the gate insulating layer; forming first contact holes exposing the source and drain regions and second contact holes exposing the source and drain electrodes by patterning the passivation layer and the gate insulating layer; and forming first and second wires connecting the source and drain regions electrically to the source and drain electrodes through the first and second contact holes, respectively.
- In another embodiment, the present invention includes the steps of depositing a metal on an insulated substrate which is transparent; forming source and drain electrodes and a gate electrode by patterning the metal using a single mask, wherein the source and drain electrodes and the gate electrode are separated from one another electrically; forming a gate insulating layer on the insulated substrate, wherein the gate insulating layer covers the gate electrode and the source and drain electrodes; forming an amorphous silicon layer on the gate insulating layer; coating the amorphous silicon layer with photoresist; defining a photoresist pattern that remains on regions corresponding to the gate electrode and the source and drain electrodes by back exposure through the substrate and development of the photoresist; doping exposed portions of the amorphous silicon layer with a heavy dose of impurity ions; removing the photoresist pattern; forming an active layer by crystallizing the amorphous silicon layer and forming source and drain regions by activating the impurity ions; forming a passivation layer on the gate insulating layer that covers the active layer; forming first contact hole that expose the source and drain regions and second contact holes that expose the source and drain electrodes by patterning the passivation layer and the gate insulating layer; and forming first and second wires connecting the source and drain regions electrically to the source and drain electrodes through the first and second contact holes, respectively.
- In yet another embodiment, the present invention includes the steps of depositing metal on an insulated substrate which is transparent; forming source and drain electrodes and a gate electrode by patterning the metal with a single mask, wherein the source and drain electrodes and the gate electrode are separated from one another electrically; forming a gate insulating layer on the insulated substrate, wherein the gate insulating layer covers the gate electrode and the source and drain electrodes; forming an active layer between the source and drain electrodes on the gate insulating layer; coating the gate insulating layer and the active layer with photoresist; defining a photoresist pattern so that photoresist remains on regions corresponding to the source and drain electrodes and the gate electrode by exposure and development of the photoresist; forming first contact holes that expose both ends of the active layer and second contact holes exposing the source and drain electrodes using the photoresist pattern as a mask; exposing a portion of the passivation layer which extends beyond the gate electrode by back exposure through the substrate and development using the gate electrode and the source and drain electrodes as masks; forming source and drain regions and a lightly doped region in the active layer using the passivation layer and the photoresist pattern as masks, respectively; removing the photoresist pattern; forming a passivation layer on the gate insulating layer; forming first contact holes that expose the source and drain regions and second contact holes that expose the source and drain electrodes; and forming first and second wires connecting the source and drain regions electrically to the source and drain electrodes through the first and second contact holes, respectively.
- It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are intended to provide further explanation of the invention as claimed.
- The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this application, illustrate embodiments of the inventing and together with the description serve to explain the principle of the invention.
- In the drawings:
- FIG. 1 shows a cross-sectional view of a TFT according to a related art;
- FIGS. 2A to2E show cross-sectional views of fabricating a TFT according to a related art;
- FIG. 3 shows a cross-sectional view of a TFT according to the present invention;
- FIGS. 4A to4E show cross-sectional views of stages of fabrication of a TFT according to a first embodiment of the present invention;
- FIGS. 5A to5B show cross-sectional views of stages of fabrication of a TFT according to a second embodiment of the present invention; and
- FIGS. 6A to6C show cross-sectional views of stages of fabrication of a TFT according to a third embodiment of the present invention.
- Reference will now be made in detail to the preferred embodiments of the present invention, examples of which are illustrated in the accompanying drawings.
- FIG. 3 shows a cross-sectional view of a TFT according to the present invention. Referring to FIG. 3, in a TFT of the present invention, a
gate electrode 33, source and drainelectrodes insulated substrate 31 of glass, or the like. The electrodes have a thickness in the range of about 1000-5000 angstroms. The electrodes are electrically separated from one another electrically along a first axis that runs parallel to the surface of the substrate and approximately through the middle of the electrodes. Thegate electrode 33, the source and drainelectrodes gate electrode 33 and thesource electrode 35 have common bus shapes. - A
gate insulating layer 39 is formed on theinsulated substrate 31 to cover thegate electrode 33. Anactive layer 41 is formed on thegate insulating layer 39 in a region overlying thegate electrode 33. Thegate insulating layer 39 is an insulating substance, such as silicon oxide, silicon nitride, or the like, and has a thickness in the range of about 500-3000 angstroms. Theactive layer 41 of polycrystalline silicon has a thickness of about 30-1000 angstroms. - A
source region 45 and adrain region 46 doped heavily with n- or p-type impurities are formed at each end of theactive layer 41 that preferably extends beyond the region where the active layer overlays thegate electrode 33. The rest of theactive layer 41, corresponding to the region that overlays thegate electrode 33, is not doped with impurities, and thus becomes a channel region. - A
passivation layer 47 having a thickness of about 3000-10000 angstroms is formed by depositing an insulating substance, such as silicon oxide, silicon nitride, or the like, on the entire surface of the above-mentioned structure. First contact holes 49 that expose the source and drainregions gate insulating layer 39, and then second contact holes 51 that expose the source and thedrain electrodes gate insulating layer 39 and thepassivation layer 47. - A
first wire 53 electrically connecting thesource region 45 to thesource electrode 35 and asecond wire 55 electrically connecting thedrain region 46 to thedrain electrode 36 are formed on predetermined portions of thepassivation layer 47 through the first and second contact holes 49 and 51, respectively. The first andsecond wires second wire 55 is also used as a pixel electrode. - In the above description of a TFT according to the present invention, the source and drain
electrodes gate insulating layer 39 are formed on theinsulated substrate 31 and are connected electrically to the source and drainregions second wires - A structure where the source and drain
electrodes insulated substrate 31 is covered with thegate insulating layer 39 and a planarizedactive layer 41, having the source and drainregions gate electrode 33 is formed from the same layer that is patterned to form theelectrodes - In a TFT according to a second embodiment of the present invention, lightly doped regions (LDD regions) are formed between the channel region and source/drain regions of the active layer. The process of forming a TFT with LDD regions is discussed in reference to FIGS. 6A to6C.
- FIGS. 4A to4E show cross-sectional views of TFT fabricating steps according to a first embodiment of the present invention. Referring to FIG. 4A, in a TFT of the present invention, metal, such as Al, Mo, or the like, is deposited on a transparent
insulated substrate 31 of glass, or the like, at a thickness of about 1000-5000 angstroms by sputtering or CVD. Next, agate electrode 33 and source/drain electrodes gate electrode 33 lies between the source and drainelectrodes gate electrode 33 and thesource electrode 35 have bus shapes. - Referring to FIG. 4B, a
gate insulating layer 39 is formed on theinsulated substrate 31 to cover thegate electrode 33 by depositing an insulating substance, such as silicon oxide, silicon nitride, or the like, at a thickness in the range of about 500-3000 angstroms. Anactive layer 41 is preferably formed by dehydration and laser annealing of the amorphous silicon that was deposited on thegate insulating layer 39 in a thickness range of about 300-1000 angstroms. Alternatively, other crystallization methods known to one of ordinary skill in the art may also be, used. Accordingly, when laser annealing is carried out, thegate insulating layer 39 prevents impurities in theinsulated substrate 31 from diffusing into theactive layer 41. - Next, the
active layer 41 is photolithographically patterned to remain between the source and drainelectrodes gate insulating layer 39. In the above step, theactive layer 41 may be formed by depositing polycrystalline silicon at low temperature instead of by deposition, dehydration and laser annealed crystallization of amorphous silicon. - Referring to FIG. 4C, the
gate insulating layer 39 is coated with photoresist to cover theactive layer 41. Next, aphotoresist pattern 43 is defined by back exposure and development using the gate, source and drainelectrodes transparent substrate 31 and shines through it using the electrodes as a mask. Using this procedure, thephotoresist pattern 43 remains just on the regions that overlay theelectrodes active layer gate electrode 33 and the source/drain electrodes - Source and
drain regions active layer 41 with n-type impurities, such as P, As, or the like, or p-type impurities such as B, or the like, by heavy dose ion implantation using thephotoresist pattern 43 as a mask. In this case, the remaining portion of theactive layer 41, which corresponds to thegate electrode 33 and which is not doped with impurities, becomes a channel region. - Referring to FIG. 4D, the photoresist pattern is removed. A
passivation layer 47 having a thickness of about 3000-10000 angstroms is formed on thegate insulating layer 39 by CVD deposition of an insulating substance, such as silicon oxide, silicon nitride, or the like, to cover theactive layer 41. - First contact holes49 that expose the source and drain
regions electrodes passivation layer 47 and the second contact holes 51 are formed by removing thepassivation layer 47 and thegate insulating layer 39. During the etching to form the second contact holes 51, after thepassivation layer 47 has been removed, only thegate insulating layer 39 is etched, because thegate insulating layer 39 has a faster etching rate than the polysilicon in the source and drainregions - Electrically-conductive and transparent substance, such as ITO, TO, or the like, are deposited on the
passivation layer 47 to connect the source and drainregions electrodes - A
first wire 53 electrically connecting thesource region 45 to thesource electrode 35 and asecond wire 55 electrically connecting thedrain region 46 to thedrain electrode 36 are formed on predetermined portions of thepassivation layer 47 through the first and second contact holes 49 and 51, respectively, by patterning the electrically-conductive and transparent substance by photolithography. In this case, the first and second wires are separated from one another electrically and thesecond wire 55 connecting thedrain region 46 to thedrain electrode 36 is also used as a pixel electrode. - FIGS. 5A to5B show cross-sectional views of certain stages of fabrication of a TFT according to a second embodiment of the present invention. Referring to FIG. 5A, after the step shown in FIG. 4A has been carried out, a
gate insulating layer 39 having a thickness of about 500-3000 angstroms is formed by CVD of an insulating substance, such as silicon oxide, silicon nitride, or the like, on theinsulated substrate 31 to cover the source and drainelectrodes amorphous silicon layer 37 having a thickness of about 300-1000 angstroms is formed on thegate insulating layer 39 by CVD. - The
amorphous silicon layer 37 is coated with photoresist. Next, aphotoresist pattern 43 is defined by back exposure and development using the gate, source and drainelectrodes photoresist pattern 43 remains only on the regions overlying theelectrodes amorphous silicon layer 37 between thegate electrode 33 and the source/drain electrodes - Impurity-ion implanted
regions 38 are formed by doping the photoresist-free regions of theamorphous silicon layer 37 with n-type impurities, such as P, As, or the like, or p-type impurities, such as B, or the like, by heavy dose ion implantation using thephotoresist pattern 43 as a mask. - Referring to FIG. 5B, the photoresist pattern is removed. An
active layer 41 is formed by dehydration and laser annealing of theamorphous silicon layer 37 and source and drainregions regions 38. During this process, when laser annealing is carried out, thegate insulating layer 39 prevents impurities in theinsulated substrate 31 from diffusing into theactive layer 41 where the source and drainelectrodes - Next, the
active layer 41 is patterned to remain only between the source and drainelectrodes gate insulating layer 39 by photolithography. - In this case, the remaining
active layer 41 between the source and drainelectrodes gate electrode 33, and which is not doped with impurities, becomes a channel region. - Successively, the steps shown in FIGS. 4D are carried out.
- In the second embodiment of the present invention, the entire process becomes simplified because the crystallization of the active layer by laser annealing and the activation of the ion-implanted impurities are carried out simultaneously.
- FIGS. 6A to6C show cross-sectional views of stages in the fabrication of a TFT according to a third embodiment of the present invention. Referring to FIG. 6A, after the steps shown in FIG. 4B have been carried out, a
passivation layer 47 having a thickness of about 3000-10000 angstroms is formed on thegate insulating layer 39 by depositing an insulating substance, such as silicon oxide, silicon nitride, or the like, to cover theactive layer 41 by CVD. Then, aphotoresist pattern 57 is formed by exposure and development after thepassivation layer 47 has been coated with photoresist. In this case, thephotoresist pattern 57 is defined to expose predetermined portions of thepassivation layer 47 corresponding to the source and drainelectrodes active layer 41. - First, contact holes49 exposing both ends of the
active layer 41 and second contact holes 51 exposing the source and drainelectrodes photoresist pattern 57 as a mask. In this photolithographic step, the first and second contact holes 49 and 51 are formed by a single photolithographic etch, wherein the first contact holes 49 are formed by removing thepassivation layer 47 and the second contact holes 51 are formed by removing thepassivation layer 47 and thegate insulating layer 39. - During the subsequent etch to form the second contact holes51, after the
passivation layer 47 has been removed, only thegate insulating layer 39 is etched because the etch rate of thegate insulating layer 39 is faster than the etch rate of the polycrystalline silicon in theactive layer 41. - Referring to FIG. 6B, back exposure and development are carried out using the
electrodes photoresist pattern 57 still remains. In this case, a portion of thephotoresist pattern 57 that does not overlay thegate electrode 33 is removed to expose a portion of thepassivation layer 47 in the region L. - Source and
drain regions region 59 are formed by doping both ends of theactive layer 45 with n-type impurities, such as P, As, or the like, or p-type impurities such, as B, or the like, and by activating the impurities. - In the above step, the source and drain regions are formed by implanting heavy dose, low energy impurity ions using the
passivation layer 47 as a mask and by activating the ions, while the lightly dopedregion 59 is formed by implanting light dose, high energy impurities where the energy is sufficient to penetrate thepassivation layer 39 using thephotoresist pattern 57 as a mask and by activating the impurities. - Referring to FIG. 6C, after the
photoresist pattern 57 has been removed, electrically-conductive and transparent substance such as ITO, TO, or the like, are deposited on thepassivation layer 47 to connect the source and drainregions electrodes - A
first wire 53 electrically connecting thesource region 45 to thesource electrode 35 and asecond wire 55 electrically connecting thedrain region 46 to thedrain electrode 36 are formed, respectively, by patterning the electrically-conductive and transparent substance by photolithography. In this case, the first and second wires are separated from one another electrically and thesecond wire 55 connecting thedrain region 46 to thedrain electrode 36 is also used as a pixel electrode. - As mentioned in the foregoing description, a TFT according to the present invention has a BBC structure, wherein source/drain electrodes and a gate electrode are formed at the same time by patterning a metal layer and a planarized active layer is formed by placing a gate insulating layer between the gate electrode and the active layer. Source and drain regions formed at both ends of the active layer are connected to source and drain electrodes by first and second wires through first and second contact holes, respectively.
- Accordingly, the present invention improves the degree of planarization, because source/drain electrodes and a gate electrode are formed by patterning the same layer. Further, the present invention reduces the number of fabrication steps by patterning a gate electrode and source/drain electrodes with a single mask.
- It will be apparent to those skilled in the art that various modifications and variations can be made in a thin film transistor and a fabricating method thereof of the present invention without departing from the spirit or scope of the inventions. Thus, it is intended that the present invention covers the modifications and variations of this invention provided they come within the scope of the appended claims and equivalents.
Claims (32)
1. A thin film transistor comprising:
a substrate;
a source electrode and a drain electrode formed on the substrate, the substrate having a first axis, the source and drain electrodes separated from each other along the first axis;
a gate electrode formed between the source and drain electrodes on the substrate along the first axis;
a gate insulating layer at least partially covering the source and drain electrodes and the gate electrode;
an active layer formed on the gate insulating layer, the active layer having a second axis parallel to the first axis and a source region and a drain region formed in the active layer and separated from one another along the second axis and a channel region formed therebetween; and
a passivation layer formed on the gate insulating layer, the passivation layer covering the active layer.
2. The thin film transistor according to , further comprising:
claim 1
first and second source contact holes formed in the passivation layer to expose the source region and electrode and first and second drain contact holes exposing the drain region and electrode;
a first wire formed on a first preselected region of the passivation layer, the first wire electrically connecting the source region through the first source contact hole to the source electrode through the second source contact hole; and
a second wire on a second preselected region of the passivation layer, the second wire electrically connecting the drain region through the first drain contact hole to the drain electrode through the second drain contact hole.
3. The thin film transistor according to , wherein the gate electrode and the source and drain electrodes are formed patterning a metal layer with a single mask.
claim 1
4. The thin film transistor according to , wherein the gate electrode and the source and drain electrodes are formed concurrently using a single mask.
claim 1
5. The thin film transistor according to , wherein the first and second wires are made of a transparent, electrically-conductive material.
claim 1
6. The thin film transistor according to , wherein the transparent, electrically-conductive material is at least one of indium tin oxide and tin oxide.
claim 5
7. The thin film transistor according to , wherein the second wire is a pixel electrode.
claim 2
8. The thin film transistor according to , wherein the active layer further comprises lightly-doped regions along the second axis between the channel region and the drain region and between the channel region and the source region.
claim 1
9. The thin film transistor according to , further comprising:
claim 8
first and second source contact holes formed in the passivation layer to expose the source region and electrode and first and second drain contact holes exposing the drain region and electrode;
a first wire formed on a first preselected region of the passivation layer, the first wire electrically connecting the source region through the first source contact hole to the source electrode through the second source contact hole; and
a second wire on a second preselected region of the passivation layer, the second wire electrically connecting the drain region through the first drain contact hole to the drain electrode through the second drain contact hole.
10. The thin film transistor according to , wherein the gate electrode and the source and drain electrodes are formed patterning a metal layer with a single mask.
claim 8
11. The thin film transistor according to , wherein the gate electrode and the source and drain electrodes are formed concurrently using a single mask.
claim 8
12. The thin film transistor according to , wherein the first and second wires are made of a transparent, electrically-conductive material.
claim 8
13. The thin film transistor according to , wherein the transparent, electrically-conductive material is at least one of indium tin oxide and tin oxide.
claim 12
14. The thin film transistor according to , wherein the second wire is a pixel electrode.
claim 9
15. A method of fabricating a thin film transistor, comprising the steps of:
depositing a metal layer on a top surface of a substrate;
forming source and drain electrodes and a gate electrode on the substrate by patterning the metal layer, wherein the source and drain electrodes and the gate electrode are electrically separated from one another;
forming a gate insulating layer on the substrate, wherein the gate insulating layer at least partially covers the gate electrode and the source and drain electrodes;
forming an active layer between the source and drain electrodes on the gate insulating layer;
forming source and drain regions by doping predetermined regions of the active layer with impurities; and
forming a passivation layer on the active layer.
16. The method of , further comprising the steps of:
claim 15
forming first and second source contact holes through the passivation and gate insulating layers to expose the source region and electrode and first and second drain contact holes through the passivation and gate insulating layers to expose the drain region and electrode by selectively patterning the passivation layer and the gate insulating layer; and
forming a first and a second wire, the first wire electrically connecting the source region to the source electrode through the first source contact hole and the second source contact hole, the second wire connecting the drain region to the drain electrode through the first drain contact hole and the second drain contact hole.
17. The method of , wherein the step of forming the source and drain regions comprise the steps of:
claim 15
coating the gate insulating layer and the active layer with a photoresist;
selectively etching the photoresist to leave a photoresist pattern;
forming the source and drain regions by doping the active layer with the impurities using the photoresist pattern as a mask; and
removing the photoresist.
18. The method of , wherein the gate electrode and the source and drain electrodes are formed from the metal layer.
claim 15
19. The method of , wherein the metal layer is at least one of Al and Mo.
claim 15
20. The method of , wherein the gate electrode is formed between the source and drain electrodes.
claim 15
21. The method of , wherein the gate electrode and the source electrode are each formed in a bus shape.
claim 20
22. The method of , wherein the active layer is formed by depositing amorphous silicon and by crystallizing the amorphous silicon by laser annealing.
claim 15
23. The method of , wherein the active layer is formed by depositing polycrystalline silicon at a low temperature.
claim 15
24. The method of , wherein the first and second contact holes are formed at the same time with one photolithography mask.
claim 16
25. The method of , wherein the first and second wires are formed from a transparent, electrically-conductive material.
claim 16
26. The method of , wherein the transparent, electrically-conductive substance is at least one of indium tin oxide and tin oxide.
claim 25
27. A method of fabricating a thin film transistor, comprising the steps of:
depositing a metal on a top surface of an insulated substrate;
forming source and drain electrodes and a gate electrode by patterning the metal from a single mask, wherein the source and drain electrodes and the gate electrode are electrically separated from one another;
forming a gate insulating layer on the insulated substrate, wherein the gate insulating layer at least partially covers the gate electrode and the source and drain electrodes;
forming an amorphous silicon layer on the gate insulating layer;
doping the exposed portions of the amorphous silicon layer with a heavy dose of impurity ions;
forming an active layer by crystallizing the amorphous silicon layer and forming source and drain regions by activating the impurity ions; and
forming a passivation layer on the gate insulating layer to cover the active layer.
28. The method of , further comprising the steps of:
claim 27
forming first and second source contact holes through the passivation and gate insulating layers to expose the source region and electrode and first and second drain contact holes through the passivation and gate insulating layers to expose the drain region and electrode by selectively patterning the passivation layer and the gate insulating layer; and
forming first and second wires, the first wire electrically connecting the source regions through the first source contact hole to the source electrode through the second source contact hole, the second wire electrically connecting the drain region through the first drain contact hole to the drain electrode through the second drain contact hole.
29. The method of , wherein the step of forming the source and drain regions comprise the steps of:
claim 27
coating the amorphous silicon layer with a photoresist;
selectively etching the photoresist to leave a photoresist pattern;
doping the exposed portions of the amorphous silicon layer with a heavy dose of impurity ions; and
removing the photoresist pattern.
30. A method of fabricating a thin film transistor, comprising the steps of:
depositing a metal on a substrate, the substrate having a first axis;
forming source and drain electrodes and a gate electrode by patterning the metal with a single mask, wherein the source and drain electrodes and the gate electrode are electrically separated from one another along the first axis;
forming a gate insulating layer on the substrate wherein the gate insulating layer covers the gate electrode and the source and drain electrodes;
forming an active layer between the source and drain electrodes on the gate insulating layer, the active layer disposed along a second axis parallel to the first axis, the active layer having a first end and a second end opposite the first end along the second axis;
forming a passivation layer on the gate insulating layer;
coating the passivation layer with a photoresist;
defining a photoresist pattern over the areas corresponding to the source and drain electrodes by exposure and development of the photoresist;
forming first contact holes exposing the first end and the second end of the active layer using the photoresist pattern as a mask;
exposing a portion of the passivation layer which is not aligned with the gate electrode by back exposure and development using the gate electrode and the source and drain electrodes as masks;
forming source and drain regions and a lightly doped region in the active layer using the passivation layer and the photoresist pattern as masks, respectively; and
removing the photoresist pattern.
31. The method of , wherein the source and drain regions are formed by heavy dose, low energy ion implantation using the passivation layer as a mask.
claim 30
32. The method of , wherein the lightly doped region is formed by light dose, high energy ion implantation, the energy sufficient to penetrate the passivation layer wherein the photoresist pattern is a mask.
claim 30
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KR10-1998-0030868A KR100451381B1 (en) | 1998-07-30 | 1998-07-30 | Thin film transistor and its manufacturing method |
US09/364,687 US6232158B1 (en) | 1998-07-30 | 1999-07-30 | Thin film transistor and a fabricating method thereof |
US09/828,156 US6440784B2 (en) | 1998-07-30 | 2001-04-09 | Thin film transistor and a fabricating method thereof |
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Also Published As
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US6232158B1 (en) | 2001-05-15 |
KR100451381B1 (en) | 2005-06-01 |
US6440784B2 (en) | 2002-08-27 |
KR20000010123A (en) | 2000-02-15 |
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