US11152593B1 - Display panel and display device - Google Patents

Display panel and display device Download PDF

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Publication number
US11152593B1
US11152593B1 US16/623,121 US201916623121A US11152593B1 US 11152593 B1 US11152593 B1 US 11152593B1 US 201916623121 A US201916623121 A US 201916623121A US 11152593 B1 US11152593 B1 US 11152593B1
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film
display panel
layer
disposed
groove
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US20210328182A1 (en
Inventor
Ying Zheng
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Assigned to WUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD. reassignment WUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: ZHENG, YING
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/84Passivation; Containers; Encapsulations
    • H10K50/844Encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/8791Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H01L51/5253
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/124Insulating layers formed between TFT elements and OLED elements
    • H01L27/3234
    • H01L27/3246
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/122Pixel-defining structures or layers, e.g. banks
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • H10K59/65OLEDs integrated with inorganic image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/87Passivation; Containers; Encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/875Arrangements for extracting light from the devices
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04MTELEPHONIC COMMUNICATION
    • H04M1/00Substation equipment, e.g. for use by subscribers
    • H04M1/02Constructional features of telephone sets
    • H04M1/0202Portable telephone sets, e.g. cordless phones, mobile phones or bar type handsets
    • H04M1/026Details of the structure or mounting of specific components
    • H04M1/0264Details of the structure or mounting of specific components for a camera module assembly
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04MTELEPHONIC COMMUNICATION
    • H04M1/00Substation equipment, e.g. for use by subscribers
    • H04M1/02Constructional features of telephone sets
    • H04M1/0202Portable telephone sets, e.g. cordless phones, mobile phones or bar type handsets
    • H04M1/026Details of the structure or mounting of specific components
    • H04M1/0266Details of the structure or mounting of specific components for a display module assembly
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/87Passivation; Containers; Encapsulations
    • H10K59/873Encapsulations

Definitions

  • the present disclosure relates to a display technical field, and more particularly to a display panel and a display device.
  • An OLED (Organic Light-Emitting Diode) device is also called an organic electro-laser display device and an organic light-emitting semiconductor.
  • the basic structure of the OLED is a sandwich-like structure constructed by a thin transparent indium tin oxide (ITO) with semiconductor properties connected to an anode of a power and a metal surface cathode.
  • the whole structure includes a hole transport layer (HTL), an electroluminescent layer (EL) and an electron transport layer (ETL).
  • HTL hole transport layer
  • EL electroluminescent layer
  • ETL electron transport layer
  • the excited state is unstable in normal environment.
  • the exciton combination in the excited state can transfer energy to the luminescent material. It can enable the luminescent material to transition from a ground state to the excited state.
  • the energy of the excited state can produce photons through radiation relaxation process; the photons release light energy and produce brightness. According to its formula, it produces three basic colors (RGB): red, green and blue, which constitute the basic color.
  • the OLED is characterized by self-luminescence.
  • the OLED is unlike a thin film transistor-liquid crystal display device, which requires backlight, so the visibility and brightness of the OLED are high.
  • the OLED has the advantages of low voltage demand, high power saving efficiency, fast response, light weight, thin thickness, simple structure, low cost, wide viewing angle, almost infinitely high contrast, low power consumption and high reaction speed. It has become one of the most important display technologies nowadays. It is gradually replacing TFT-LCD and is expected to become the next generation of mainstream display technology after LCD.
  • a flexible organic light-emitting display usually requires to dispose installation holes for reserving hardware installation locations such as a front-facing camera, an earphone and a start key on a terminal device.
  • the installation holes are generally disposed in a non-display area outside an effective display area of the display panel. In this way, the area of the effective display area is limited, and the full screen cannot be prepared. Hence, it needs to seek a new display panel and a new display device to solve the above problems.
  • One object of the present invention is to provide a display panel and a display device, which can solve the problems that the existed display panel restricts the display area and cannot realize a full screen.
  • the present invention provides a display panel, defining a display area and including a substrate, an antireflective film, a thin film transistor layer and a packaging layer.
  • the antireflective film is disposed on the substrate;
  • the thin film transistor layer is disposed on the antireflective film;
  • the packaging layer is disposed on the thin film transistor layer.
  • a groove is formed on one side of the packaging layer of the display area away from the substrate, and extends downward to one side of the antireflective film facing a thin film transistor layer.
  • groove is rectangular or inverted trapezoidal in shape.
  • the number of the groove is two or more.
  • the antireflective film is formed on the substrate by an ion beam assisted deposition process or a chemical deposition process.
  • the antireflective film includes a first film, a second film and a third film; the first film is formed on the substrate; a refractive index of the second film to an incident light is greater than that of the first film and the third film to the incident light, and a refractive index of the first film to an incident light is greater than that of the third film to the incident light.
  • a material of the first film is Al 2 O 3
  • a material of the second film is ZrO2
  • a material of the third film is SiO2.
  • a thickness of the first film is 110-150 nm
  • a thickness of the second film is 240-280 nm
  • a thickness of the third film is 110-150 nm
  • the display panel further includes: anodes, a pixel definition layer, a light emitting layer and a cathode.
  • the anodes are arranged at interval on the thin film transistor layer;
  • the pixel definition layer is disposed on the thin film transistor layer and located between two adjacent anodes;
  • the light emitting layer is disposed on the anodes and the pixel definition layer;
  • the cathode is disposed on the light emitting layer.
  • the packaging layer is disposed on the cathode.
  • the present invention further provides a display device, comprising a display panel and a camera located under the display panel; wherein the display panel is provided by the present invention, and the camera is disposed under the display panel and is corresponding to the groove.
  • the present invention relates to the display panel and the display device.
  • the groove forms on one side of the packaging layer of the display area away from the substrate, and extends downward to one side of the antireflective film facing the thin film transistor layer; and the camera is disposed on one side of the substrate away from the thin film transistor layer and is corresponding the groove, thereby reducing process flow, improving productivity and yield, and realizing the full screen.
  • the present invention also adds the antireflective film to improve the light transmittance at the groove and avoid the phenomenon that the camera is difficult to image.
  • FIG. 1 is a structure schematic view of a display panel of the present invention
  • FIG. 2 is a structure schematic view of a display device of the present invention.
  • FIG. 3 is a plan view of the display panel of the present invention.
  • display panel 200 camera 1 substrate 2 antireflective film 3 thin film transistor layer 4 anode 5 pixel definition layer 6 light emitting layer 7 cathode 8 packaging layer 9 groove 11 first underlayer 12 intermediate layer 13 second underlayer 21 first film 22 second film 23 third film
  • the component When one component is described as “on another component”, the component may be directly placed on another component; or there exists an intermediate component, the component is placed on the intermediate component, and then the intermediate component is placed on another component.
  • the component when one component is described as “installed to” or “connected to” another component, they can be understood as “installed” or “connected” directly; or they can be understood that one component is “installed to” or “connected to” another component through an intermediate component.
  • a display panel 100 defines a display area, and includes a substrate 1 , an antireflective film 2 , a thin film transistor layer 3 , anodes 4 , a pixel definition layer 5 , a light emitting layer 6 , a cathode 7 and a packaging layer 8 .
  • the substrate 1 includes a first underlayer 11 , an intermediate layer 12 and a second underlayer 13 .
  • the thicknesses of the first underlayer 11 and the second underlayer 13 are 6-10 microns ( ⁇ m). If the thicknesses of the first underlayer 11 and the second underlayer 13 are less than 6 ⁇ m, the production cost thereof will increase due to production process problems. If the thicknesses of the first underlayer 11 and the second underlayer 13 are greater than 10 ⁇ m, the overall thickness of the display panel 100 will increase, which affects the beauty of the product and the feel of the use.
  • the material of the first underlayer 11 and the second underlayer 13 can be polyimide, and the first underlayer 11 and the second underlayer 13 made from the polyimide have good flexibility.
  • the material of the intermediate layer 12 may be SiO 2 or SiN x , or a laminated structure of SiO 2 and SiN x .
  • the prepared intermediate layer 12 has good water and oxygen resistance and can also improve the reliability between the first underlayer 11 and the second underlayer 13 .
  • the antireflective film 2 includes a first film 21 , a second film 22 and a third film 23 .
  • the first film 21 is disposed on the substrate 1
  • the second film 22 is disposed on the first film 21
  • the third film 23 is disposed on the second film 22 .
  • the antireflective film 2 can be formed on the substrate 1 by an ion beam assisted deposition process or a chemical deposition process.
  • a refractive index of the second film 22 to an incident light is greater than that of the first film 21 and the third film 23 to the incident light
  • a refractive index of the first film 21 to an incident light is greater than that of the third film 23 to the incident light.
  • a material of the first film 21 is Al 2 O 3
  • a material of the second film 22 is ZrO2
  • a material of the third film 23 is SiO2.
  • the transmittance of the display panel 100 can be effectively improved by using the three-layer anti-reflection film structure of ⁇ /4- ⁇ /2- ⁇ /4.
  • the antireflective film 2 can also provide a good water oxygen barrier effect, to avoid an abnormal display of the display area of the light emitting layer 6 caused by water vapor intrusion.
  • thicknesses of the first film 21 , the second film 22 and the third film 23 are 100-300 nm. Specifically, the thickness of the first film 21 is 110-150 nm, the thickness of the second film 22 is 240-280 nm, and the thickness of the third film 23 is 110-150 nm. Thus, the transmittance can be increased and achieve the best effect.
  • the anodes 4 are arranged at interval on the thin film transistor layer 3 ; the pixel definition layer 5 is disposed between two adjacent anodes 4 on the thin film transistor layer 3 ; the light emitting layer 6 is disposed on the anodes 4 and the pixel definition layer 5 ; the cathode 7 is disposed on the light emitting layer 6 ; and the packaging layer 8 is disposed on the cathode 7 .
  • the display panel 100 of the embodiment disposes a groove 9 , which forms on one side of the packaging layer 8 of the display area away from the substrate 1 , and extends downward to one side of the antireflective film 2 facing the thin film transistor layer 3 .
  • the groove 9 can be rectangular or inverted trapezoidal in shape. In the embodiment, the groove 9 is rectangular in shape. In the actual production, according to the actual demand, the number of the groove 9 can be increased to two or more. In the embodiment, by setting the groove 9 in the display area of the display panel 100 , the display area can be increased and the full screen can be achieved.
  • the embodiment further provides a display device, which includes the display panel 100 of the present invention and a camera 200 located under the display panel 100 .
  • the camera 200 is located under the display panel 100 and is corresponding to the groove 9 .
  • the display area can be increased and the full screen can be achieved.
  • a projection area of the groove 9 in the display panel 100 can be larger than that of the camera 200 , so as to increase a lighting area of the camera 200 , improve an imaging effect of the camera 200 and increase a customer experience.
  • the number of the groove 9 can be increased to two or more.
  • the grooves 9 are arranged to form an open area shown by dotted lines in the drawing.
  • the camera 200 is corresponding to the open area, thereby achieving the same display effect, increasing the display area, and achieving the full screen effect.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
US16/623,121 2019-06-10 2019-08-05 Display panel and display device Active 2040-02-10 US11152593B1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CN201910495048.7A CN110265441B (zh) 2019-06-10 2019-06-10 一种显示面板及其显示装置
CN201910495048.7 2019-06-10
PCT/CN2019/099249 WO2020248348A1 (fr) 2019-06-10 2019-08-05 Panneau d'affichage et dispositif d'affichage le comprenant

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US11152593B1 true US11152593B1 (en) 2021-10-19
US20210328182A1 US20210328182A1 (en) 2021-10-21

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CN (1) CN110265441B (fr)
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CN110752221B (zh) * 2019-10-30 2022-02-11 厦门天马微电子有限公司 一种显示装置
CN111725427B (zh) * 2020-06-11 2022-04-05 武汉华星光电半导体显示技术有限公司 一种显示面板和显示装置
CN111754876B (zh) * 2020-06-28 2022-06-21 昆山国显光电有限公司 一种显示面板以及显示装置
CN113066837B (zh) * 2021-03-22 2023-07-11 合肥维信诺科技有限公司 显示面板和显示装置
CN113066842B (zh) * 2021-03-23 2024-02-20 合肥维信诺科技有限公司 显示面板、显示装置及显示面板的制备方法
CN113555403B (zh) * 2021-07-20 2024-05-24 京东方科技集团股份有限公司 一种显示面板及其制作方法

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CN110265441A (zh) 2019-09-20
US20210328182A1 (en) 2021-10-21
WO2020248348A1 (fr) 2020-12-17
CN110265441B (zh) 2021-09-03

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