US11152593B1 - Display panel and display device - Google Patents
Display panel and display device Download PDFInfo
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- US11152593B1 US11152593B1 US16/623,121 US201916623121A US11152593B1 US 11152593 B1 US11152593 B1 US 11152593B1 US 201916623121 A US201916623121 A US 201916623121A US 11152593 B1 US11152593 B1 US 11152593B1
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- 239000010408 film Substances 0.000 claims abstract description 84
- 239000010409 thin film Substances 0.000 claims abstract description 23
- 230000003667 anti-reflective effect Effects 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 238000004806 packaging method and process Methods 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 10
- 230000008569 process Effects 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical group O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 6
- 229910052681 coesite Inorganic materials 0.000 claims description 4
- 229910052906 cristobalite Inorganic materials 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 229910052682 stishovite Inorganic materials 0.000 claims description 4
- 229910052905 tridymite Inorganic materials 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 238000005234 chemical deposition Methods 0.000 claims description 3
- 229910052593 corundum Inorganic materials 0.000 claims description 3
- 238000007735 ion beam assisted deposition Methods 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 3
- 238000002834 transmittance Methods 0.000 abstract description 4
- 230000000694 effects Effects 0.000 description 5
- 230000005281 excited state Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000009434 installation Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000003796 beauty Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
-
- H01L51/5253—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
-
- H01L27/3234—
-
- H01L27/3246—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
- H10K59/65—OLEDs integrated with inorganic image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04M—TELEPHONIC COMMUNICATION
- H04M1/00—Substation equipment, e.g. for use by subscribers
- H04M1/02—Constructional features of telephone sets
- H04M1/0202—Portable telephone sets, e.g. cordless phones, mobile phones or bar type handsets
- H04M1/026—Details of the structure or mounting of specific components
- H04M1/0264—Details of the structure or mounting of specific components for a camera module assembly
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04M—TELEPHONIC COMMUNICATION
- H04M1/00—Substation equipment, e.g. for use by subscribers
- H04M1/02—Constructional features of telephone sets
- H04M1/0202—Portable telephone sets, e.g. cordless phones, mobile phones or bar type handsets
- H04M1/026—Details of the structure or mounting of specific components
- H04M1/0266—Details of the structure or mounting of specific components for a display module assembly
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
Definitions
- the present disclosure relates to a display technical field, and more particularly to a display panel and a display device.
- An OLED (Organic Light-Emitting Diode) device is also called an organic electro-laser display device and an organic light-emitting semiconductor.
- the basic structure of the OLED is a sandwich-like structure constructed by a thin transparent indium tin oxide (ITO) with semiconductor properties connected to an anode of a power and a metal surface cathode.
- the whole structure includes a hole transport layer (HTL), an electroluminescent layer (EL) and an electron transport layer (ETL).
- HTL hole transport layer
- EL electroluminescent layer
- ETL electron transport layer
- the excited state is unstable in normal environment.
- the exciton combination in the excited state can transfer energy to the luminescent material. It can enable the luminescent material to transition from a ground state to the excited state.
- the energy of the excited state can produce photons through radiation relaxation process; the photons release light energy and produce brightness. According to its formula, it produces three basic colors (RGB): red, green and blue, which constitute the basic color.
- the OLED is characterized by self-luminescence.
- the OLED is unlike a thin film transistor-liquid crystal display device, which requires backlight, so the visibility and brightness of the OLED are high.
- the OLED has the advantages of low voltage demand, high power saving efficiency, fast response, light weight, thin thickness, simple structure, low cost, wide viewing angle, almost infinitely high contrast, low power consumption and high reaction speed. It has become one of the most important display technologies nowadays. It is gradually replacing TFT-LCD and is expected to become the next generation of mainstream display technology after LCD.
- a flexible organic light-emitting display usually requires to dispose installation holes for reserving hardware installation locations such as a front-facing camera, an earphone and a start key on a terminal device.
- the installation holes are generally disposed in a non-display area outside an effective display area of the display panel. In this way, the area of the effective display area is limited, and the full screen cannot be prepared. Hence, it needs to seek a new display panel and a new display device to solve the above problems.
- One object of the present invention is to provide a display panel and a display device, which can solve the problems that the existed display panel restricts the display area and cannot realize a full screen.
- the present invention provides a display panel, defining a display area and including a substrate, an antireflective film, a thin film transistor layer and a packaging layer.
- the antireflective film is disposed on the substrate;
- the thin film transistor layer is disposed on the antireflective film;
- the packaging layer is disposed on the thin film transistor layer.
- a groove is formed on one side of the packaging layer of the display area away from the substrate, and extends downward to one side of the antireflective film facing a thin film transistor layer.
- groove is rectangular or inverted trapezoidal in shape.
- the number of the groove is two or more.
- the antireflective film is formed on the substrate by an ion beam assisted deposition process or a chemical deposition process.
- the antireflective film includes a first film, a second film and a third film; the first film is formed on the substrate; a refractive index of the second film to an incident light is greater than that of the first film and the third film to the incident light, and a refractive index of the first film to an incident light is greater than that of the third film to the incident light.
- a material of the first film is Al 2 O 3
- a material of the second film is ZrO2
- a material of the third film is SiO2.
- a thickness of the first film is 110-150 nm
- a thickness of the second film is 240-280 nm
- a thickness of the third film is 110-150 nm
- the display panel further includes: anodes, a pixel definition layer, a light emitting layer and a cathode.
- the anodes are arranged at interval on the thin film transistor layer;
- the pixel definition layer is disposed on the thin film transistor layer and located between two adjacent anodes;
- the light emitting layer is disposed on the anodes and the pixel definition layer;
- the cathode is disposed on the light emitting layer.
- the packaging layer is disposed on the cathode.
- the present invention further provides a display device, comprising a display panel and a camera located under the display panel; wherein the display panel is provided by the present invention, and the camera is disposed under the display panel and is corresponding to the groove.
- the present invention relates to the display panel and the display device.
- the groove forms on one side of the packaging layer of the display area away from the substrate, and extends downward to one side of the antireflective film facing the thin film transistor layer; and the camera is disposed on one side of the substrate away from the thin film transistor layer and is corresponding the groove, thereby reducing process flow, improving productivity and yield, and realizing the full screen.
- the present invention also adds the antireflective film to improve the light transmittance at the groove and avoid the phenomenon that the camera is difficult to image.
- FIG. 1 is a structure schematic view of a display panel of the present invention
- FIG. 2 is a structure schematic view of a display device of the present invention.
- FIG. 3 is a plan view of the display panel of the present invention.
- display panel 200 camera 1 substrate 2 antireflective film 3 thin film transistor layer 4 anode 5 pixel definition layer 6 light emitting layer 7 cathode 8 packaging layer 9 groove 11 first underlayer 12 intermediate layer 13 second underlayer 21 first film 22 second film 23 third film
- the component When one component is described as “on another component”, the component may be directly placed on another component; or there exists an intermediate component, the component is placed on the intermediate component, and then the intermediate component is placed on another component.
- the component when one component is described as “installed to” or “connected to” another component, they can be understood as “installed” or “connected” directly; or they can be understood that one component is “installed to” or “connected to” another component through an intermediate component.
- a display panel 100 defines a display area, and includes a substrate 1 , an antireflective film 2 , a thin film transistor layer 3 , anodes 4 , a pixel definition layer 5 , a light emitting layer 6 , a cathode 7 and a packaging layer 8 .
- the substrate 1 includes a first underlayer 11 , an intermediate layer 12 and a second underlayer 13 .
- the thicknesses of the first underlayer 11 and the second underlayer 13 are 6-10 microns ( ⁇ m). If the thicknesses of the first underlayer 11 and the second underlayer 13 are less than 6 ⁇ m, the production cost thereof will increase due to production process problems. If the thicknesses of the first underlayer 11 and the second underlayer 13 are greater than 10 ⁇ m, the overall thickness of the display panel 100 will increase, which affects the beauty of the product and the feel of the use.
- the material of the first underlayer 11 and the second underlayer 13 can be polyimide, and the first underlayer 11 and the second underlayer 13 made from the polyimide have good flexibility.
- the material of the intermediate layer 12 may be SiO 2 or SiN x , or a laminated structure of SiO 2 and SiN x .
- the prepared intermediate layer 12 has good water and oxygen resistance and can also improve the reliability between the first underlayer 11 and the second underlayer 13 .
- the antireflective film 2 includes a first film 21 , a second film 22 and a third film 23 .
- the first film 21 is disposed on the substrate 1
- the second film 22 is disposed on the first film 21
- the third film 23 is disposed on the second film 22 .
- the antireflective film 2 can be formed on the substrate 1 by an ion beam assisted deposition process or a chemical deposition process.
- a refractive index of the second film 22 to an incident light is greater than that of the first film 21 and the third film 23 to the incident light
- a refractive index of the first film 21 to an incident light is greater than that of the third film 23 to the incident light.
- a material of the first film 21 is Al 2 O 3
- a material of the second film 22 is ZrO2
- a material of the third film 23 is SiO2.
- the transmittance of the display panel 100 can be effectively improved by using the three-layer anti-reflection film structure of ⁇ /4- ⁇ /2- ⁇ /4.
- the antireflective film 2 can also provide a good water oxygen barrier effect, to avoid an abnormal display of the display area of the light emitting layer 6 caused by water vapor intrusion.
- thicknesses of the first film 21 , the second film 22 and the third film 23 are 100-300 nm. Specifically, the thickness of the first film 21 is 110-150 nm, the thickness of the second film 22 is 240-280 nm, and the thickness of the third film 23 is 110-150 nm. Thus, the transmittance can be increased and achieve the best effect.
- the anodes 4 are arranged at interval on the thin film transistor layer 3 ; the pixel definition layer 5 is disposed between two adjacent anodes 4 on the thin film transistor layer 3 ; the light emitting layer 6 is disposed on the anodes 4 and the pixel definition layer 5 ; the cathode 7 is disposed on the light emitting layer 6 ; and the packaging layer 8 is disposed on the cathode 7 .
- the display panel 100 of the embodiment disposes a groove 9 , which forms on one side of the packaging layer 8 of the display area away from the substrate 1 , and extends downward to one side of the antireflective film 2 facing the thin film transistor layer 3 .
- the groove 9 can be rectangular or inverted trapezoidal in shape. In the embodiment, the groove 9 is rectangular in shape. In the actual production, according to the actual demand, the number of the groove 9 can be increased to two or more. In the embodiment, by setting the groove 9 in the display area of the display panel 100 , the display area can be increased and the full screen can be achieved.
- the embodiment further provides a display device, which includes the display panel 100 of the present invention and a camera 200 located under the display panel 100 .
- the camera 200 is located under the display panel 100 and is corresponding to the groove 9 .
- the display area can be increased and the full screen can be achieved.
- a projection area of the groove 9 in the display panel 100 can be larger than that of the camera 200 , so as to increase a lighting area of the camera 200 , improve an imaging effect of the camera 200 and increase a customer experience.
- the number of the groove 9 can be increased to two or more.
- the grooves 9 are arranged to form an open area shown by dotted lines in the drawing.
- the camera 200 is corresponding to the open area, thereby achieving the same display effect, increasing the display area, and achieving the full screen effect.
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electroluminescent Light Sources (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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CN201910495048.7A CN110265441B (zh) | 2019-06-10 | 2019-06-10 | 一种显示面板及其显示装置 |
CN201910495048.7 | 2019-06-10 | ||
PCT/CN2019/099249 WO2020248348A1 (fr) | 2019-06-10 | 2019-08-05 | Panneau d'affichage et dispositif d'affichage le comprenant |
Publications (2)
Publication Number | Publication Date |
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US11152593B1 true US11152593B1 (en) | 2021-10-19 |
US20210328182A1 US20210328182A1 (en) | 2021-10-21 |
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US16/623,121 Active 2040-02-10 US11152593B1 (en) | 2019-06-10 | 2019-08-05 | Display panel and display device |
Country Status (3)
Country | Link |
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US (1) | US11152593B1 (fr) |
CN (1) | CN110265441B (fr) |
WO (1) | WO2020248348A1 (fr) |
Families Citing this family (6)
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CN110752221B (zh) * | 2019-10-30 | 2022-02-11 | 厦门天马微电子有限公司 | 一种显示装置 |
CN111725427B (zh) * | 2020-06-11 | 2022-04-05 | 武汉华星光电半导体显示技术有限公司 | 一种显示面板和显示装置 |
CN111754876B (zh) * | 2020-06-28 | 2022-06-21 | 昆山国显光电有限公司 | 一种显示面板以及显示装置 |
CN113066837B (zh) * | 2021-03-22 | 2023-07-11 | 合肥维信诺科技有限公司 | 显示面板和显示装置 |
CN113066842B (zh) * | 2021-03-23 | 2024-02-20 | 合肥维信诺科技有限公司 | 显示面板、显示装置及显示面板的制备方法 |
CN113555403B (zh) * | 2021-07-20 | 2024-05-24 | 京东方科技集团股份有限公司 | 一种显示面板及其制作方法 |
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CN108269839A (zh) | 2018-01-31 | 2018-07-10 | 昆山国显光电有限公司 | 一种显示屏及带有显示屏的电子设备 |
US20190252415A1 (en) * | 2018-05-14 | 2019-08-15 | Yungu (Gu'an) Technology Co., Ltd. | Array substrates and manufacturing methods thereof, and display panels |
CN109065756A (zh) | 2018-08-03 | 2018-12-21 | 京东方科技集团股份有限公司 | 一种显示器件及其制备方法、显示装置 |
US20200043992A1 (en) | 2018-08-03 | 2020-02-06 | Boe Technology Group Co., Ltd. | Display element, method for fabricating the same and display device |
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US20210328182A1 (en) | 2021-10-21 |
WO2020248348A1 (fr) | 2020-12-17 |
CN110265441B (zh) | 2021-09-03 |
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