WO2020199445A1 - Dispositif d'affichage à delo et son procédé de préparation - Google Patents

Dispositif d'affichage à delo et son procédé de préparation Download PDF

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Publication number
WO2020199445A1
WO2020199445A1 PCT/CN2019/099348 CN2019099348W WO2020199445A1 WO 2020199445 A1 WO2020199445 A1 WO 2020199445A1 CN 2019099348 W CN2019099348 W CN 2019099348W WO 2020199445 A1 WO2020199445 A1 WO 2020199445A1
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WO
WIPO (PCT)
Prior art keywords
layer
pixel definition
display device
cathode
oled display
Prior art date
Application number
PCT/CN2019/099348
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English (en)
Chinese (zh)
Inventor
张明
杨杰
Original Assignee
武汉华星光电半导体显示技术有限公司
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Publication date
Application filed by 武汉华星光电半导体显示技术有限公司 filed Critical 武汉华星光电半导体显示技术有限公司
Publication of WO2020199445A1 publication Critical patent/WO2020199445A1/fr

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Definitions

  • the invention relates to the field of display technology, in particular to an OLED display device and a preparation method thereof.
  • OLED Organic Light-Emitting Diode, Organic Light-Emitting Diode
  • OLED Organic Light-Emitting Diode
  • organic electric laser display device organic light-emitting semiconductor
  • the basic structure of an OLED is a sandwich structure, which is usually a sandwich-like structure wrapped by an anode, a luminescent material, and a cathode.
  • the entire structure layer includes: hole transport layer (HTL), light emitting layer (EL) and electron transport layer (ETL).
  • HTL hole transport layer
  • EL light emitting layer
  • ETL electron transport layer
  • the positive electrode holes and the surface cathode charges will combine in the light-emitting layer, and under the action of the Coulomb force, they will recombine with a certain probability to form excitons (electron-hole pairs) in an excited state.
  • the excited state is unstable in the normal environment.
  • the excitons in the excited state recombine and transfer energy to the luminescent material, making it transition from the ground state energy level to the excited state.
  • the excited state energy generates photons through the radiation relaxation process and releases light It can produce light, and the three primary colors of red, green and blue are produced according to different formulas, which
  • OLED the characteristic of OLED is that it emits light by itself, unlike the thin film transistor liquid crystal display device (English full name: Thin The film transistor-liquid crystal display (TFT-LCD for short) needs backlight, so the visibility and brightness are high.
  • OLED has the advantages of low voltage demand, high power saving efficiency, fast response, light weight, thin thickness, simple structure, low cost, wide viewing angle, almost infinitely high contrast, low power consumption, and extremely high response speed. It has become One of the most important display technologies today is gradually replacing TFT-LCD is expected to become the next-generation mainstream display technology after LCD.
  • the reason for the poor transmittance of the cathode is that in order to improve the luminous efficiency of the OLED display device, a fully reflective anode is generally used as the bottom electrode, and a semi-reflective and translucent cathode is used as the top electrode.
  • the The over rate is generally 40%. Therefore, it is necessary to seek a new type of OLED display device to solve the problem that the camera area cannot be displayed.
  • An object of the present invention is to provide an OLED display device and a preparation method thereof, which can solve the problem that the camera area of the current OLED display device cannot be displayed.
  • an OLED display device which defines a first display area and a second display area, which includes: a substrate, a functional layer, an anode, a pixel definition layer, and a first isolation column , Light-emitting layer and cathode.
  • the functional layer is arranged on the substrate; the anodes are arranged on the functional layer at intervals; the pixel definition layer is arranged on the functional layer between adjacent anodes; wherein the second display
  • the pixel definition layer of the area includes a first pixel definition layer and a second pixel definition layer; the first isolation pillar is disposed on the first pixel definition layer; the light-emitting layer is disposed on the pixel definition layer and the second pixel definition layer.
  • one second pixel definition layer is provided between two adjacent first pixel definition layers.
  • two or more second pixel definition layers are arranged between two adjacent first pixel definition layers.
  • the pixel definition layer of the first display area is provided with first isolation pillars.
  • the OLED display device further includes an encapsulation layer, and the encapsulation layer is disposed on the cathode and the groove.
  • the packaging layer includes: a first inorganic packaging layer, an organic packaging layer, and a second inorganic packaging layer.
  • first inorganic encapsulation layer is disposed on the cathode and in the groove;
  • organic encapsulation layer is disposed on the first inorganic encapsulation layer;
  • second inorganic encapsulation layer is disposed on the organic encapsulation layer Layer up.
  • the thickness of the first encapsulation layer ranges from 10nm-2um.
  • Another embodiment of the present invention also provides a method for preparing the OLED display device of the present invention, which includes:
  • step S1 the OLED display device to be prepared is defined with a first display area and a second display area, a substrate is provided, a functional layer is arranged on the substrate, and anodes are arranged on the functional layer at intervals.
  • a pixel definition layer is arranged on the functional layer between the anodes, wherein the pixel definition layer located in the second display area includes a first pixel definition layer and a second pixel definition layer;
  • Step S2 disposing a first isolation pillar on the first pixel definition layer, and disposing a second isolation pillar on the second pixel definition layer;
  • Step S3 arranging a light-emitting layer on the pixel defining layer, the first isolation pillar, the second isolation pillar and the anode, and then setting a cathode on the light-emitting layer;
  • Step S4 the second isolation column on the second pixel definition layer and the light-emitting layer and the cathode provided above are etched away, and the upper surface of the cathode on the second pixel definition layer is partially recessed downwards until the light-emitting layer A groove is formed on the bottom surface.
  • one second pixel definition layer is provided between two adjacent first pixel definition layers.
  • step S2 two or more second pixel definition layers are arranged between two adjacent first pixel definition layers.
  • the invention relates to an OLED display device and a preparation method thereof.
  • the upper surface of the cathode on the second pixel definition layer is partially recessed downwards until a groove is formed on the bottom surface of the light-emitting layer, thereby reducing the shielding area of the cathode, increasing the transmittance of the cathode, and finally improving the performance of the under-screen camera Lighting effect improves its imaging effect.
  • FIG. 1 is a schematic diagram of the structure of the OLED display device of the present invention.
  • FIG. 2 is a structural schematic diagram 1 of Embodiment 1 of the OLED display device of the present invention.
  • Embodiment 1 of the OLED display device of the present invention is a schematic plan view of Embodiment 1 of the OLED display device of the present invention.
  • FIG. 4 is a second structural diagram of Embodiment 1 of the OLED display device of the present invention.
  • FIG. 5 is a schematic structural diagram of Embodiment 2 of the OLED display device of the present invention.
  • Embodiment 2 of the OLED display device of the present invention is a schematic plan view of Embodiment 2 of the OLED display device of the present invention.
  • FIG. 7 is a schematic structural diagram of Embodiment 3 of the OLED display device of the present invention.
  • FIG. 8 is a schematic plan view of Embodiment 3 of the OLED display device of the present invention.
  • FIG. 9 is a schematic diagram 1 of the preparation process of Example 1 of the OLED display device of the present invention.
  • FIG. 10 is a second schematic diagram of the preparation process of Example 1 of the OLED display device of the present invention.
  • Example 11 is the third schematic diagram of the preparation process of Example 1 of the OLED display device of the present invention.
  • OLED display device 101 The first display area
  • the first inorganic packaging layer 12.
  • Organic encapsulation layer
  • the first pixel definition layer 41 The first pixel definition layer 42.
  • the component can be directly placed on the other component; there may also be an intermediate component on which the component is placed , And the intermediate component is placed on another component.
  • a component is described as “installed to” or “connected to” another component, both can be understood as directly “installed” or “connected”, or a component is “installed to” or “connected to” through an intermediate component Another component.
  • an OLED display device 100 is defined with a first display area 101 and a second display area 102.
  • the OLED display device 100 shown therein includes: a substrate 1, a functional layer 2, an anode 3, a pixel definition layer 4, a first isolation pillar 5, a light emitting layer 6 and a cathode 7.
  • the functional layer 2 is arranged on the substrate 1; the anodes 3 are arranged on the functional layer 2 at intervals; the pixel definition layer 4 is arranged on the functional layer 2 between adjacent anodes 3.
  • the pixel definition layer 4 of the first display area 101 is provided with first isolation pillars 5.
  • the pixel definition layer 4 located in the second display area 102 includes a first pixel definition layer 41 and a second pixel definition layer 42; the first isolation pillar 5 is disposed on the first pixel definition layer 41; The light-emitting layer 5 is disposed on the first pixel definition layer 41, the first isolation pillar 5, the second pixel definition layer 42, and the anode 3; the cathode 7 is disposed on the light-emitting layer 6, and the second pixel defines The upper surface of the cathode 7 on the layer 42 is partially recessed downwards until the bottom surface of the light-emitting layer 6 forms a groove 9.
  • one second pixel definition layer 42 is provided between the two adjacent first pixel definition layers 41.
  • the shielding area of the cathode 7 can be reduced, the transmittance of the cathode 7 can be increased, and finally the lighting effect of the under-screen camera can be improved, and its imaging effect can be improved.
  • the OLED display device 100 of the present invention further includes an encapsulation layer 10, and the encapsulation layer 10 is disposed on the cathode 7 and the groove 9.
  • the packaging layer 10 includes: a first inorganic packaging layer 11, an organic packaging layer 12 and a second inorganic packaging layer 13.
  • the first inorganic encapsulation layer 11 is disposed on the cathode 7 and in the groove 9; the organic encapsulation layer 12 is disposed on the first inorganic encapsulation layer 11; the second inorganic encapsulation layer 13 It is arranged on the organic encapsulation layer 12.
  • the thickness of the first encapsulation layer 11 ranges from 10 nm to 2 um.
  • the organic encapsulation layer 12 mainly uses its good flexibility to improve the bendability of the OLED display device 100.
  • the first inorganic encapsulation layer 11 and the second inorganic encapsulation layer 13 mainly compensate for the poor water and oxygen resistance of the organic encapsulation layer 12, so as to prevent the OLED display device 100 from being corroded by water and oxygen and improve its service life.
  • two number of second pixel definition layers 42 are arranged between the two adjacent first pixel definition layers 41.
  • the shielding area of the cathode 7 can be reduced, the transmittance of the cathode 7 can be increased, and finally the lighting effect of the under-screen camera can be improved, and its imaging effect can be improved.
  • the shielding area of the cathode 7 can be reduced, the transmittance of the cathode 7 can be increased, and finally the lighting effect of the under-screen camera can be improved, and its imaging effect can be improved.
  • this embodiment also provides a method for preparing the OLED display device 100 involved in Preparation Example 1. It includes: step S1, defining the OLED display device 100 to be prepared with a first display area 101 and a second display area 102, providing a substrate 1, and disposing a functional layer 2 on the substrate 1, and placing the functional layer on the 2 is provided with anodes 3 at intervals, and a pixel definition layer 4 is provided on the functional layer 2 between adjacent anodes 3, wherein the pixel definition layer 4 located in the second display area 102 includes a first pixel definition layer 41 and The second pixel definition layer 42.
  • the method further includes: step S2, disposing a first isolation pillar 5 on the first pixel definition layer 41, and disposing a second isolation pillar 8 on the second pixel definition layer 42.
  • the method further includes: step S3, arranging a light emitting layer 6 on the first pixel defining layer 41, the first isolation pillar 5, the second isolation pillar 8, the second pixel defining layer 42, and the anode 3, and then A cathode 7 is provided on the light-emitting layer 6.
  • step S4 etching away the second isolation pillar 8 on the second pixel definition layer 42 and the light-emitting layer 6 and the cathode 7 provided thereon, on the cathode 7 on the second pixel definition layer 42 The surface is partially recessed downwards until a groove 9 is formed on the bottom surface of the light-emitting layer 6, and finally the OLED display device described in Embodiment 1 is formed.
  • one, two, three, or more than three second pixel definition layers may be provided between the two adjacent first pixel definition layers 41 42.
  • the shielding area of the cathode 7 can be further reduced, thereby increasing the transmittance of the cathode 7 and ultimately improving the lighting effect of the under-screen camera. Improve its imaging effect.
  • the etching method in step S5 includes one or more of exposure, dry etching and laser etching.
  • dry etching there are many types of dry etching, including light volatilization, vapor phase etching, plasma etching and so on. Its advantages are: good anisotropy, high selection ratio, controllability, flexibility, good repeatability, safe operation of thin lines, easy automation, no chemical waste, no pollution in the treatment process, and high cleanliness.
  • the shape of the second isolation pillar 8 is an inverted trapezoid, so that after etching, the upper surface of the cathode 7 on the second pixel definition layer 42 will be partially recessed downward until the bottom surface of the light-emitting layer 6 forms a groove 9.
  • the first isolation column 5 and the second isolation column 8 are made by exposure and development technology.
  • the light-emitting layer 6 and the cathode 7 are formed by an evaporation technique, and the light-emitting layer 6 and the cathode 7 produced therefrom are very pure.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Geometry (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

La présente invention concerne un dispositif d'affichage à DELO et son procédé de préparation. Le dispositif d'affichage à DELO comprend un substrat, une couche fonctionnelle, une anode, une couche de définition de pixels, une première colonne d'isolation, une couche électroluminescente, et une cathode. Dans la présente invention, la surface supérieure de la cathode sur la seconde couche de définition de pixels est partiellement évidée vers le bas jusqu'à ce que la surface inférieure de la couche électroluminescente forme une rainure, ce qui permet de réduire la zone de protection de la cathode et d'augmenter la transmittance de la cathode, et enfin, l'effet d'éclairage de la caméra sous l'écran ainsi que l'effet d'imagerie sont améliorés.
PCT/CN2019/099348 2019-03-29 2019-08-06 Dispositif d'affichage à delo et son procédé de préparation WO2020199445A1 (fr)

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Application Number Priority Date Filing Date Title
CN201910253087.6 2019-03-29
CN201910253087.6A CN110048005B (zh) 2019-03-29 2019-03-29 一种oled显示器件及其制备方法

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US11043636B2 (en) 2017-05-17 2021-06-22 Oti Lumionics Inc. Method for selectively depositing a conductive coating over a patterning coating and device including a conductive coating
US11088327B2 (en) 2015-10-26 2021-08-10 Oti Lumionics Inc. Method for patterning a coating on a surface and device including a patterned coating
US11581487B2 (en) 2017-04-26 2023-02-14 Oti Lumionics Inc. Patterned conductive coating for surface of an opto-electronic device
US11700747B2 (en) 2019-06-26 2023-07-11 Oti Lumionics Inc. Optoelectronic device including light transmissive regions, with light diffraction characteristics
US11730012B2 (en) 2019-03-07 2023-08-15 Oti Lumionics Inc. Materials for forming a nucleation-inhibiting coating and devices incorporating same
US11751415B2 (en) 2018-02-02 2023-09-05 Oti Lumionics Inc. Materials for forming a nucleation-inhibiting coating and devices incorporating same
US11832473B2 (en) 2019-06-26 2023-11-28 Oti Lumionics Inc. Optoelectronic device including light transmissive regions, with light diffraction characteristics

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JP7236844B2 (ja) * 2018-11-12 2023-03-10 株式会社ジャパンディスプレイ 表示装置、及びその製造方法
CN110048005B (zh) * 2019-03-29 2020-06-16 武汉华星光电半导体显示技术有限公司 一种oled显示器件及其制备方法
CN110429117A (zh) * 2019-07-30 2019-11-08 武汉华星光电半导体显示技术有限公司 一种有机发光器件、显示装置及有机发光器件的制作方法
CN110473898B (zh) * 2019-07-30 2021-10-08 武汉华星光电半导体显示技术有限公司 有机发光二极管显示面板及其制作方法
CN110993675B (zh) * 2019-12-20 2022-04-26 武汉华星光电半导体显示技术有限公司 Oled显示面板及其制备方法
CN111129103A (zh) * 2020-01-02 2020-05-08 昆山国显光电有限公司 显示面板以及显示装置
CN111463356B (zh) * 2020-04-20 2022-08-09 昆山国显光电有限公司 一种显示面板、显示面板的制备方法和显示装置
CN111834426B (zh) * 2020-07-02 2023-01-31 合肥维信诺科技有限公司 透光显示面板、显示面板、制备方法及显示装置
CN111864106B (zh) * 2020-07-10 2021-06-22 武汉华星光电半导体显示技术有限公司 一种显示面板、显示面板的制作方法及显示装置
CN113113456B (zh) * 2021-03-31 2022-11-08 武汉华星光电半导体显示技术有限公司 一种oled显示面板及其制备方法、显示装置

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CN110048005A (zh) * 2019-03-29 2019-07-23 武汉华星光电半导体显示技术有限公司 一种oled显示器件及其制备方法

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Publication number Priority date Publication date Assignee Title
US11706969B2 (en) 2015-10-26 2023-07-18 Oti Lumionics Inc. Method for patterning a coating on a surface and device including a patterned coating
US11088327B2 (en) 2015-10-26 2021-08-10 Oti Lumionics Inc. Method for patterning a coating on a surface and device including a patterned coating
US11158803B2 (en) 2015-10-26 2021-10-26 Oti Lumionics Inc. Method for patterning a coating on a surface and device including a patterned coating
US11158802B2 (en) 2015-10-26 2021-10-26 Oti Lumionics Inc. Method for patterning a coating on a surface and device including a patterned coating
US11335855B2 (en) 2015-10-26 2022-05-17 Oti Lumionics Inc. Method for patterning a coating on a surface and device including a patterned coating
US11785831B2 (en) 2015-10-26 2023-10-10 Oti Lumionics Inc. Method for patterning a coating on a surface and device including a patterned coating
US11581487B2 (en) 2017-04-26 2023-02-14 Oti Lumionics Inc. Patterned conductive coating for surface of an opto-electronic device
US11730048B2 (en) 2017-05-17 2023-08-15 OTI Lumionic Inc. Method for selectively depositing a conductive coating over a patterning coating and device including a conductive coating
US11043636B2 (en) 2017-05-17 2021-06-22 Oti Lumionics Inc. Method for selectively depositing a conductive coating over a patterning coating and device including a conductive coating
US11751415B2 (en) 2018-02-02 2023-09-05 Oti Lumionics Inc. Materials for forming a nucleation-inhibiting coating and devices incorporating same
US11730012B2 (en) 2019-03-07 2023-08-15 Oti Lumionics Inc. Materials for forming a nucleation-inhibiting coating and devices incorporating same
US11700747B2 (en) 2019-06-26 2023-07-11 Oti Lumionics Inc. Optoelectronic device including light transmissive regions, with light diffraction characteristics
US11832473B2 (en) 2019-06-26 2023-11-28 Oti Lumionics Inc. Optoelectronic device including light transmissive regions, with light diffraction characteristics
US12004383B2 (en) 2019-06-26 2024-06-04 Oti Lumionics Inc. Optoelectronic device including light transmissive regions, with light diffraction characteristics

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