US10854350B2 - Light stability of nanowire-based transparent conductors - Google Patents

Light stability of nanowire-based transparent conductors Download PDF

Info

Publication number
US10854350B2
US10854350B2 US14/664,679 US201514664679A US10854350B2 US 10854350 B2 US10854350 B2 US 10854350B2 US 201514664679 A US201514664679 A US 201514664679A US 10854350 B2 US10854350 B2 US 10854350B2
Authority
US
United States
Prior art keywords
light
optical stack
light stabilizer
nanowire
resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active, expires
Application number
US14/664,679
Other languages
English (en)
Other versions
US20150270024A1 (en
Inventor
Pierre-Marc Allemand
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cambrios Film Solutions Corp
Original Assignee
Cambrios Film Solutions Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cambrios Film Solutions Corp filed Critical Cambrios Film Solutions Corp
Priority to US14/664,679 priority Critical patent/US10854350B2/en
Assigned to CAMBRIOS TECHNOLOGIES CORPORATION reassignment CAMBRIOS TECHNOLOGIES CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: ALLEMAND, PIERRE-MARC
Publication of US20150270024A1 publication Critical patent/US20150270024A1/en
Assigned to Seed IP Law Group PLLC reassignment Seed IP Law Group PLLC LIEN (SEE DOCUMENT FOR DETAILS). Assignors: CAMBRIOS TECHNOLOGIES CORPORATION
Assigned to CAMBRIOS TECHNOLOGIES CORPORATION reassignment CAMBRIOS TECHNOLOGIES CORPORATION RELEASE OF LIEN Assignors: Seed IP Law Group PLLC
Assigned to CHAMP GREAT INT'L CORPORATION reassignment CHAMP GREAT INT'L CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CAMBRIOS TECHNOLOGIES CORPORATION
Assigned to CAM HOLDING CORPORATION reassignment CAM HOLDING CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CHAMP GREAT INTERNATIONAL CORPORATION
Assigned to CAMBRIOS FILM SOLUTIONS CORPORATION reassignment CAMBRIOS FILM SOLUTIONS CORPORATION CHANGE OF NAME (SEE DOCUMENT FOR DETAILS). Assignors: CAM HOLDING CORPORATION
Assigned to INVENTIVE POWER LIMITED reassignment INVENTIVE POWER LIMITED SECURITY INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CAMBRIOS FILM SOLUTIONS CORPORATION
Assigned to CAMBRIOS FILM SOLUTIONS CORPORATION reassignment CAMBRIOS FILM SOLUTIONS CORPORATION CHANGE OF NAME (SEE DOCUMENT FOR DETAILS). Assignors: CAM HOLDING CORPORATION
Publication of US10854350B2 publication Critical patent/US10854350B2/en
Application granted granted Critical
Assigned to CAMBRIOS FILM SOLUTIONS CORPORATION reassignment CAMBRIOS FILM SOLUTIONS CORPORATION RELEASE BY SECURED PARTY (SEE DOCUMENT FOR DETAILS). Assignors: INVENTIVE POWER LIMITED
Active legal-status Critical Current
Adjusted expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/02—Layer formed of wires, e.g. mesh
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • B32B17/064—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/04—Interconnection of layers
    • B32B7/12—Interconnection of layers using interposed adhesives or interposed materials with bonding properties
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00—Inks
    • C09D11/52—Electrically conductive inks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2262/00—Composition or structural features of fibres which form a fibrous or filamentary layer or are present as additives
    • B32B2262/10—Inorganic fibres
    • B32B2262/103—Metal fibres
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/20—Properties of the layers or laminate having particular electrical or magnetic properties, e.g. piezoelectric
    • B32B2307/202—Conductive
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/40—Properties of the layers or laminate having particular optical properties
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/40—Properties of the layers or laminate having particular optical properties
    • B32B2307/412—Transparent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/20—Displays, e.g. liquid crystal displays, plasma displays
    • B32B2457/206—Organic displays, e.g. OLED
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2551/00—Optical elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B2207/00—Coding scheme for general features or characteristics of optical elements and systems of subclass G02B, but not including elements and systems which would be classified in G02B6/00 and subgroups
    • G02B2207/121—Antistatic or EM shielding layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249924—Noninterengaged fiber-containing paper-free web or sheet which is not of specified porosity
    • Y10T428/24994—Fiber embedded in or on the surface of a polymeric matrix
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/28—Web or sheet containing structurally defined element or component and having an adhesive outermost layer
    • Y10T428/2804—Next to metal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31678—Of metal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T442/00—Fabric [woven, knitted, or nonwoven textile or cloth, etc.]
    • Y10T442/10—Scrim [e.g., open net or mesh, gauze, loose or open weave or knit, etc.]

Definitions

  • This disclosure relates to the field of nanotechnology, and more specifically describes methods and structures for transparent conducting films having either, or both, a silver nanostructure layer or silver mesh conductive layer with superior light stability.
  • Described herein are light-stable transparent conductors having a silver mesh or nanostructure-based conductive layer and methods for making the same.
  • light stability is markedly improved in transparent conductors that incorporate one or more light stabilizers, such as one or more transition metal additives.
  • One embodiment provides an optical stack comprising: a conductive film includes silver nanowires or silver mesh; and a light stabilizer comprising a transition metal salt or a transition coordination complex.
  • the optical stack further comprises a substrate, an optically clear adhesive, an overcoat, in which the light stabilizer is incorporated.
  • Yet another embodiment provides a coating composition comprising: a plurality of silver nanowires; and a light stabilizer comprising a transition metal salt or a transition coordination complex.
  • FIG. 1 shows a standard configuration of an optical stack including a nanostructure layer.
  • FIG. 2 shows an alternative configuration of an optical stack that includes an overcoat layer overlying the nanostructure layer.
  • FIG. 3 shows the sheet resistance change and edge failure with time in a standard optical stack under light exposure.
  • FIG. 4 shows the changes of sheet resistance over time, under xenon light, of an optical stack formed with silver nanowire ink doped with a light stabilizer.
  • FIG. 5 shows the changes of sheet resistances over time, under fluorescent light, of optical stacks formed from ink doped with a light stabilizer as compared to a standard optical stack form from control ink with no light stabilizer.
  • FIG. 6 shows the sheet resistance change with time and the delay of edge failure in an optical stack formed with silver nanowire ink doped with a FeSO 4 additive.
  • FIG. 7 shows the correlation of haze and sheet resistance of conductive films formed of ink doped with a FeSO 4 additive and control ink with no light stabilizer.
  • FIG. 8 shows sheet resistance vs haze of films coated with control ink with no light stabilizer, films coated with ink with a light stabilizer and films with a light stabilizer after high pressure lamination.
  • FIG. 9 shows sheet resistance vs haze of films coated with control ink with no light stabilizer, and films coated with ink doped with a light stabilizer and a complexing agent.
  • FIG. 10 shows sheet resistance vs haze of films coated with control ink with no light stabilizer, and films coated with ink with a light stabilizer and a pH adjuster.
  • FIG. 11 shows the sheet resistance change with time and the delay of edge failure of a nanostructure film having an overcoat doped with a transition metal additive as a light stabilizer according to one embodiment.
  • FIG. 12 shows the sheet resistance change with time and the delay of edge failure of a nanostructure film having an overcoat doped with another transition metal additive as a light stabilizer according to another embodiment.
  • FIG. 13 shows the lack of light stabilizing effect of certain transition metal additive.
  • FIG. 14 shows the sheet resistance change with time and the delay of edge failure of a nanostructure film having an overcoat doped with yet another transition metal additive as a light stabilizer according to yet another embodiment.
  • FIG. 15 shows the sheet resistance change with time and the delay of edge failure of a nanostructure film having an overcoat doped with ferrocene.
  • Transparent conductors are thin, transparent conductive films constructed by a silver nanostructure layer or a silver mesh layer, or both. These transparent conductors are particularly suited for use in the display industry. However, they must demonstrate good environmental (thermal, humidity and light) reliability in order to be incorporated in commercial products.
  • Preparation of a nanostructure-based conductive film typically involves forming multi-layer structures including a base substrate, a nanostructure layer or film, and an optional protective layer or overcoat “OC,” as well as an optically clear adhesive “OCA.” Typically, these constituent layers are sequentially coated or bonded by an OCA layer.
  • a “nanostructure layer” or “nanowire layer” refers to a thin film of interconnected or networking silver nanowires.
  • the multi-layer structure is also referred to as an “optical stack.”
  • the reliability of conductive films under accelerated light testing can be less than the standard industry requirements.
  • the sheet resistance of the conductive film may start drifting or increasing after prolonged or intense light exposure. This can sometimes be addressed by carefully selecting the base materials for substrates and top layers (including the OCA).
  • active species including oxygen and reactive oxygen species, etc.
  • active species are the most likely candidates for causing light-induced instability.
  • One possible source for generating these active species may be plasmon excitation on the surface of the metal nanowires.
  • a peculiar consequence of oxygen diffusing unevenly into the optical stack is that photo-degradation can sometimes be extremely localized at the edge of a shadow mask (i.e., the interface or edge between a light-exposed area and a dark area).
  • the highly localized photo-degradation leads to a sharp increase of sheet resistance at the edge, compared to the sheet resistances in the dark or light-exposed areas. This observation is also referred to herein as an “edge failure.”
  • FIG. 1 shows a standard optical stack ( 10 ) including a nanostructure layer ( 20 ) bonded, by an OCA layer ( 30 ), to a cover glass ( 40 ).
  • the nanostructure layer ( 20 ) includes (not shown) a plurality of networking conductive nanowires (e.g., silver nanowires) coated on a substrate. In the configuration shown, the nanowires are facing up and contacting the OCA layer.
  • the conductive film may be used as a part of a device such as display.
  • a black deco frame ( 50 ) is placed on the periphery of the display, and the location of the edge or interface between light-exposed area and a dark area is indicated ( 60 ).
  • FIG. 2 shows an alternative configuration of another standard optical stack ( 100 ), in which the nanowire layer ( 120 ) is first overcoated.
  • the overcoat ( 122 ) is typically coated on the side of the nanowires ( 126 ) that have been coated on a substrate ( 128 ) and cured. Thereafter, the overcoat layer is bonded to a cover glass ( 140 ) by an OCA layer ( 130 ).
  • a black deco frame ( 150 ) is also shown.
  • An ambient environmental chamber can be used as a testing equipment that provides simulated light and ambient conditions in which the optical stack operates.
  • a xenon arc lamp e.g., Atlas XXL+
  • the xenon arm lamp provides a full spectrum of light closely matching the sunlight.
  • the intensity of the light may be adjusted to simulate direct sunlight or indirect diffuse sunlight at different times of the day or season.
  • the environmental chamber may adjust for the temperature (including the chamber temperature and the back panel temperature), relative humidity (RH) and the like.
  • Various embodiments are directed to conductive films or optical stacks incorporating one or more light stabilizers.
  • the light stabilizers may operate according to any number of mechanisms.
  • the light stabilizers may deactivate or neutralize the oxygen or other active species that are present or have diffused into the conductive film.
  • the light stabilizers may act as catalysts to accelerate the reaction of oxygen with the organic materials present in the optical stacks so that the oxygen is rapidly consumed by the organic materials before interacting with the silver nanostructures.
  • the silver nanostructures are in the vicinity of a number of organic materials, including substrates, binder materials, overcoat, OCAs, etc., all of which may be capable of consuming oxygen under the appropriate catalytic conditions.
  • the light stabilizers may quench the plasmon excitation on the metal surface, thereby curtailing the generation of active species.
  • the light stabilizers described herein contribute to stabilizing the sheet resistance of the conductive films or optical stacks that are under prolonged light exposure, especially at the light-dark interface.
  • the light stabilizers are “transition metal additives” or “transition metal dopants,” which terms are used interchangeably and include, for example, transition metal salts, transition metal coordination complexes, as discussed herein.
  • a transition metal additive is a coordination complex or metal salt which includes a central transition metal atom or ion, and a surrounding array of bound molecules or ions, also referred to as ligands. Depending on the size, charge or valency of the central metal atom or ion, the number of the ligands may vary. In some embodiments, though not all, transition metal compounds in their low oxidation state are preferred since high oxidation state metals could oxidize the silver nanowires.
  • Suitable transition metal dopants include, without limitation, complexes of Fe(II), Fe(III), Co(II), Co(III), Mn(II), Mn(III), V(III), V(IV), etc.
  • organic or inorganic ligands may be used as parts of the complex with the transition metals.
  • Suitable organic ligands include for example, tris(acetylacetonato) (“acac”), ferrocene (“FC”), bipyridine, phenanthroline, N,N′-bis(salicylidene)-ethylenediamine, acetate, lactate, ascorbate, gluconate, citrate, tartrate, ethylenediaminetetraacetate, and the like.
  • Suitable inorganic ligands include, for example, sulfate, nitrate, tetrafluoroborate, and the like.
  • transition metal additives include, without limitation, Fe(III)(acac) 3 , Co(acac) 2 , Mn(acac) 3 , VO(acac) 2 , iron (II) ascorbate, iron (II) sulfate, TRIS-(2,2′-bipyridine) iron(II) sulfate, iron(II) acetate, iron(II) D-gluconate dihydrate, iron(II) lactate hydrate, iron (III) nitrate, Iron(III) sulfate, iron(III)NH 4 (SO 4 ) 2 , ferrocenium tetrafluoroborate, and the like.
  • transition metal additives are compatible with being in contact with the nanowires in a solution environment, and thus are particularly suitable for being directly incorporated in a nanowire coating composition (also referred to as “ink”).
  • Suitable examples include transition metal salts formed with inorganic acids (e.g., to form a sulfate) or organic acids.
  • Organic acids are preferred because they have multiple protons available to form salt with a transition metal, and they often have other moieties (such as oxygen or nitrogen) to form coordinated bonds with the transition metal.
  • Certain organic acids are bibasic (up to two available protons), tribasic (up to three available protons), or tetrabasic (up to four available protons), making them suitable to form stable or coordinated complex with transition metals.
  • Specific examples of the organic acids include, without limitation, bibasic acids such as tartaric acid, tribasic acids such as citric acid, and tetrabasic acids such as ethylenediaminetetraacetic acid (EDTA).
  • transition metal dopants include, without limitation, iron (II) sulfate, iron (III) tartrate, iron (III) sodium EDTA, ammonium iron citrate, and iron (III) citric tribasic.
  • ligands such as bipyridine, phenanthroline, and N,N′-bis(salicylidene)ethylenediamine, more commonly referred to as salen, may be used in the nanowire or mesh layer, OCA or other overcoat layer separately or in conjunction with transition metal additives. These ligands can activate the trace metallic impurities already present (or added) in the film composite and make these trace metallic impurities much more reactive toward oxygen.
  • Yet another class of light stabilizers includes reversible redox systems, such that the photo-generated charges in the nanowire layer or mesh are rapidly and efficiently quenched by the redox species, effectively preventing photo-oxidation of the nanowires or mesh even in the presence of oxygen.
  • reversible redox systems such that the photo-generated charges in the nanowire layer or mesh are rapidly and efficiently quenched by the redox species, effectively preventing photo-oxidation of the nanowires or mesh even in the presence of oxygen.
  • One common feature among the suitable reverse redox systems is that they should be as reversible as possible so that they are being adequately regenerated instead of being consumed upon oxidation or reduction.
  • the redox systems may be organic (hydroquinone, TMPD, TTF, TCNQ, viologens, fullerenes, ascorbic acid and its derivatives, nitroxide derivatives, redox polymers, conducting polymers, PANI, PEDOT), organometallics (metallocenes such as ferrocene, cobaltocene, etc), or inorganic (I ⁇ /I 2 , K 4 Fe(CN) 6 , metal + /metal ++ salts, or metal ++ /metal +++ salts, such as Fe 2+ /Fe 3+ ).
  • the light stabilizers disclosed herein can be incorporated in any of the layers of a given optical stack, including the substrate, OCA layer, the nanowire layer (as shown in FIG. 1 ) and the overcoat (as shown in FIG. 2 ).
  • the light stabilizers may be incorporated in a solution-based composition that can be coated to form any of the constituent layers of a given optical stack.
  • coating compositions for forming a nanowire layer, an overcoat layer, an undercoat layer, or an OCA layer may incorporate a predetermined amount of light stabilizers before coating.
  • a constituent layer or layers of the optical stack may be soaked in a solution of light stabilizer(s) for a period of time to allow the light stabilizer(s) to diffuse into the layers.
  • the light stabilizers may be applied, in a separate or dedicated step, to a layer of the optical stack.
  • a dopant solution may be applied (e.g., spray or spin-coat) on top of the nanowire layer, before the overcoat layer is coated.
  • light stabilizers including transition metal additives that catalyze, scavenge oxygen or quench the surface plasmon excitation
  • light stabilizers is not limited to silver nanowires, but can be useful for protecting other metallic nanostructure and/or metal mesh transparent conductors, and oxygen sensitive elements such as light emitting diodes (including organic light emitting diodes, or OLED), photovoltaic (including organic photovoltaic, or OPV) devices, or any electrical device built onto a substrate which is not a particularly good oxygen barrier, such as flexible plastic substrates.
  • the light stabilizers may be incorporated in an overcoat composition.
  • An overcoat is a protective layer or sealant and is typically coated directly over the nanowire layer, i.e., on the side of the nanowires. See FIG. 2 .
  • the overcoat is typically a UV-curable, highly durable polymeric material, including acrylate or epoxy materials.
  • the overcoat is formed by coating an overcoat composition, the concentration of which could determine the thickness of the overcoat.
  • the overcoat is a thin film of 50-200 nm thick, though other thicknesses are also contemplated.
  • the overcoat composition may include one or more dopants at about 0.14%-30% by weight of the polymeric material (solid, excluding the solvent). Suitable amounts of the dopant by weight of the solid polymeric material can be, for example, 0.3%-8%, 0.5%-10%, 0.7%-15%, 1%-10%, 2-8%, 5-15% and the like.
  • the overcoat composition comprises one or more UV-curable acrylate polymers.
  • a mixture of acrylates may be used.
  • a mixture of urethane methacrylate, pentaerythritol triacrylate and trimethylolpropane triacrylate may be used (e.g., HC 5619, supplied by Addison Clear Wave Coatings Inc.)
  • the UV-curable polymers may be dissolved in a 50/50 mixture of isopropanol (IPA) and diacetone alcohol at high concentration (40 wt % solids).
  • the concentrated overcoat composition further comprises one or more light stabilizers, as described herein.
  • the concentrated coating composition includes Fe(III)(acac) 3 .
  • the concentrated overcoat composition Prior to coating, the concentrated overcoat composition may be diluted to 0.5-5% of solids by adding additional solvents (e.g., IPA or diacetone alcohol, or a 50/50 mixture thereof).
  • additional solvents e.g., IPA or diacetone alcohol, or a 50/50 mixture thereof.
  • the dopant level in the diluted overcoat composition can be about 34-3100 ppm by weight of the composition, or more preferably, about 70 ppm-1500 ppm by weight of the composition.
  • the light stabilizers may also be incorporated directly into ink, i.e., nanowire coating composition that comprises silver nanowires.
  • ink i.e., nanowire coating composition that comprises silver nanowires.
  • the light stabilizers, following coating the ink on a substrate, will be present in the nanowire layer or film.
  • transition metal salts or complexes formed with acids are capable of improving stability of conductive films without increasing the contact resistance between metal nanowires.
  • the transition metal salts or complexes used in the nanowire coating composition are thermally or UV-degradable. As they degrade at an elevated temperature or under UV light within the coated films, the contact resistance is lowered and the sheet resistance at given haze is able to recover.
  • transition metal dopants include, without limitation, iron tartrate, iron sodium EDTA, iron citric tribasic and ammonium iron citrate.
  • the transition metal dopants may be first dissolved in DI water as high concentrated solutions.
  • the resulting solutions may be used as ink additives in combination with the nanowire coating composition at a lower concentration.
  • the doped nanowire coating composition (or “doped ink”) may be coated at a target haze in accordance with any of the coating method describe herein.
  • the resulting nanowire layer may be further over-coated according to a standard procedure describe herein.
  • the overcoat may itself be doped with a transition metal dopant (e.g., Example 2).
  • the conductive film formed from a doped nanowire composition may be subjected to a high pressure lamination process to increase the sheet resistance.
  • a high pressure lamination process includes passing the film through a high pressure laminator, which process will lower sheet resistance for films coated with silver nanowire coating composition doped with one or more transition metal dopants.
  • the light stabilizers may also be incorporated in an OCA layer.
  • a commercial OCA film may be soaked in a solution containing one or more transition metal dopants for a sufficient period of time to allow the dopants to diffuse into the substrate.
  • a solution of an adhesive and one or more transition metal dopant may be coated to form a doped OCA layer.
  • the transition metal dopant may also be incorporated in a substrate.
  • a commercial substrate e.g., PET film
  • Example 1 is an optical stack of the structure shown in FIG. 1 . As a control, there is no dopant or additive in the optical stack.
  • a silver nanowire film was first formed by coating on a 50 ⁇ m polyethylene terephthalate (PET) film substrate a nanowire coating composition that included silver nanowires.
  • the nanowire coating composition includes about 0.05% to 1.4% silver nanowires in a water-based solvent (e.g., water or water mixed with a co-solvent such as isopropanol, ethanol, etc).
  • a surfactant e.g., a fluorosurfactant
  • HPMC hydroxypropyl methyl cellulose
  • a referred method is slot-die coating, including slot-die roll-to-roll coating.
  • the nanowire film (including the nanowire layer and the substrate) was then laminated onto a borosilicate cover glass with a standard OCA (8146, from 3M®), the layer of networking nanowires (NWs) facing the cover glass. A black tape was placed on the top glass.
  • Another control stack having an overcoat on the nanowire film was also prepared. See the configuration shown in FIG. 2 .
  • the device was placed in a Xenon test chamber (0.8 W, 38° C., 50% RH).
  • the resistivity of the Light, Edge, and Dark areas were monitored by a non-contact method (Delcom).
  • a regular (control) film showed the following light stability data, as represented by the amount of time exposed to the xenon light source before sheet resistance change by at least 20% or more:
  • the sheet resistance of a conductive film having conductive nanostructures could drift higher (less conductive).
  • the edge area has an even more rapid drift compared to the light area. See also FIG. 3 .
  • Nanowire Coating Composition Doped with Iron Citric Tribasic
  • Nanowires were prepared according to the process described in U.S. Provisional Applications No. 61/978,715 and 62/075,733, in the name of Cambrios Technologies Corporation, the assignee of the present application. Both of these applications are incorporated herein by reference in their entireties.
  • the undoped nanowire ink was prepared as a control.
  • the undoped nanowire ink contained 0.136% silver, 0.28% HPMC 311 (a viscosity modifier or binder), and Capstone® 175 ppm FS-3100 (a nonionic fluorosurfactant sold by DuPont).
  • a doped nanowire ink was prepared. Compared to Ink A, the doped Ink B is more diluted, though the relative amounts of the constituents stayed constant.
  • a dopant was added to provide the following concentrations: 0.06% silver, 0.12% HPMC311, 77 ppm Capstone® FS-3100, and 65.3 ppm iron citrate tribasic monohydrate (transition metal dopant).
  • FIG. 3 shows the sheet resistance in light-exposed films (bare or overcoated) with no dopant.
  • the edge failure was pronounced at the interface of the dark and light areas for both bare film and overcoated film, whereby the sheet resistance increases sharply upon being exposed to xenon light for about 50 hours.
  • sheet resistance remained relative constant for hundreds of hours in the light exposed area for bare film and overcoated film, comparable to those not exposed to light at all (i.e., dark controls).
  • FIG. 4 shows the comparative results of doped films under xenon light. As shown, there was imperceptible edge failure, and the reliability of the films was achieved over a period of hundreds of hours.
  • FIG. 5 shows a side-by-side comparison of doped and undoped conductive films exposed to fluorescent light. Consistent with the results shown in FIGS. 3 and 4 , the doped film exhibited much better long-term light stability as compared to the undoped film.
  • Iron (II) sulfate (FeSO 4 ) was added to a standard nanowire coating composition at a molar ratio of >0.3:1 relative to a total amount of silver nanowires.
  • the standard ink without light stability additive (“control ink”) is composed of 0.06% silver, 0.12% HPMC, 77.2 ppm Capstone® FS-3100.
  • control ink is composed of 0.06% silver, 0.12% HPMC, 77.2 ppm Capstone® FS-3100.
  • FeSO 4 was added at 25.3 ppm.
  • the standard nanowire coating composition (undoped) having the same amount of silver nanowires was also formed into an optical stack according to the configurations of FIG. 1 and FIG. 2 .
  • FIG. 6 shows the sheet resistance of the transparent conductive film formed from the standard coating composition may increase by a factor of more than two when compared to the conductive film formed from the doped nanowire coating composition.
  • FIG. 6 also shows that the edge failure was delayed by more than 500 hours.
  • FIG. 7 shows haze vs film sheet resistance for the two inks, namely, doped and undoped control ink.
  • ink with the light stabilizer produced a conductive film of a higher sheet resistance.
  • the conductive film formed from the doped nanowire composition of Example 3 (0.06% silver nanowires, 0.12% HPMC, 77.2 ppm Capstone® FS-3100, 25.3 ppm of FeSO 4 ) showed relatively high sheet resistance at given haze levels, as shown in FIG. 8 (circles).
  • FIG. 8 circles.
  • the resistance lowered to the level of control films (films without transition metal dopants). This demonstrates that high-pressure lamination can effectively lower sheet resistance in films made from doped ink.
  • Another method to lower the sheet resistance of silver nanowire film formed from nanowire coating compositions doped with transition metal dopant is to add additional complexing agents, such as Hexafor 612 (Maflon, Bergamo Italy), FSOA, FSOB, OH ⁇ , acid (e.g., organic acid), etc.
  • Hexafor 612 Moflon, Bergamo Italy
  • FSOA FeSO 4 dopant
  • FSOB e.g., OH ⁇
  • acid e.g., organic acid
  • ink with the FeSO 4 dopant and complexing agent Hexafor 612 produced a conductive film of a similar haze-resistance relationship as that of the control film formed of undoped coating composition.
  • FIG. 10 shows sheet resistance vs haze of films coated with control ink and films coated with ink doped with FeSO 4 and acetic acid. As shown, ink with the FeSO 4 dopant and acetic acid has a similar haze-resistance relationship as that of the control film.
  • a UV-curable acrylate mixture was used (HC 5619, Addison Clear Wave Coatings Inc.).
  • HC 5619 contains a mixture of acrylates in a 50/50 mixture of isopropanol (IPA) and diacetone alcohol at high concentration (40 wt % solids).
  • This concentrated overcoat composition was diluted with IPA/diacetone alcohol (50:50) to a concentration in the range of 1-3% of solid.
  • the light stabilizer, i.e., Fe(III)(acac) 3 was added to the diluted acrylates at a dopant level of 70-1500 ppm by weight of the doped overcoat solution.
  • a nanowire-based transparent film having a PET substrate was overcoated on the nanowire side by coating the doped overcoat solution.
  • An optical stack was then constructed as described in Example 1.
  • FIG. 11 shows superior light stability with no increase in resistance for 3400 hrs when exposed to Xe light at 38° C. and 50% R.H., illustrating that Fe(acac) 3 is efficient as a light stabilizer.
  • Example 1 The conductive film prepared in Example 1 was first soaked in a 1% solution of cobalt acetylacetonate (“Co(acac) 2 ”) in acetone for 24 hrs, rinsed with acetone, and dried with nitrogen. It is believed that some Co(acac) 2 is able to diffuse into the film. A device was then constructed as in Example 1. The device has better light stability than the standard optical stack of Example 1, thus demonstrating that Co(acac) 2 is suitable as a light stabilizer (up to 1500 hours with no significant increase in resistance).
  • Co(acac) 2 cobalt acetylacetonate
  • FIG. 13 shows resistance as a function of time in the light, edge and dark areas of the nanowire layer of an optical stack in which Co(acac) 2 was diffused into the nanowire layer.
  • Example 1 The nanowire film used in Example 1 was first soaked in a 1% solution of Mn(acac) 3 in acetone for 24 hrs, rinsed with acetone, and dried with nitrogen. It is believed that some manganese acetylacetonate is able to diffuse into the film. A device was then constructed as exposed to xenon light as in Example 1. This device showed worse light stability than Example 1, thus demonstrating that manganese acetylacetonate is not suitable as a light stabilizer.
  • Light area resistance increased by at least 20% in about 200 hrs.
  • Edge area resistance increased by at least 20% at about 250 hrs.
  • V(acac) 2 Nanowire Composite Film on Pet Doped with Vanadyl Acetylacetonate
  • Example 1 The nanowire film used in Example 1 was first soaked in a 1% solution of VO(acac) 2 in acetone for 24 hrs, rinsed with acetone, and dried with nitrogen. It is believed that some vanadyl acetylacetonate is able to diffuse into the film. A device was then constructed and exposed to a xenon light source as in Example 1. This device showed even better light stability than Example 8, thus demonstrating that vanadyl acetylacetonate is suitable as a light stabilizer (see FIG. 14 ).
  • Example 1 The nanowire transparent film used in Example 1 was first soaked in a 1% solution of ferrocene (Fc) in acetone for 24 hrs, rinsed with acetone, and dried with nitrogen. It is believed that some ferrocene is able to diffuse into the film. A device was then constructed and exposed to a xenon light source as in Example 1.
  • FIG. 15 shows the percent change in resistance of the nanowire layer as a function of hours of light exposure. As shown in FIG. 15 , this device showed excellent light stability, thus demonstrating that ferrocene is suitable as a light stabilizer.
  • Light area more than 1000 hrs without significant increase in resistance (e.g., less than 1% or 2%).
  • Edge area more than 1000 hrs without significant increase in resistance (e.g., less than 1% or 2%)

Landscapes

  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Non-Insulated Conductors (AREA)
  • Laminated Bodies (AREA)
US14/664,679 2014-03-20 2015-03-20 Light stability of nanowire-based transparent conductors Active 2037-04-16 US10854350B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US14/664,679 US10854350B2 (en) 2014-03-20 2015-03-20 Light stability of nanowire-based transparent conductors

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201461968257P 2014-03-20 2014-03-20
US201462074497P 2014-11-03 2014-11-03
US14/664,679 US10854350B2 (en) 2014-03-20 2015-03-20 Light stability of nanowire-based transparent conductors

Publications (2)

Publication Number Publication Date
US20150270024A1 US20150270024A1 (en) 2015-09-24
US10854350B2 true US10854350B2 (en) 2020-12-01

Family

ID=52811264

Family Applications (1)

Application Number Title Priority Date Filing Date
US14/664,679 Active 2037-04-16 US10854350B2 (en) 2014-03-20 2015-03-20 Light stability of nanowire-based transparent conductors

Country Status (7)

Country Link
US (1) US10854350B2 (ko)
EP (2) EP3706142A1 (ko)
KR (1) KR102302408B1 (ko)
CN (1) CN106660312B (ko)
SG (2) SG10201906316UA (ko)
TW (1) TWI686821B (ko)
WO (1) WO2015143383A1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11513638B2 (en) * 2020-12-18 2022-11-29 Cambrios Film Solutions Corporation Silver nanowire protection layer structure and manufacturing method thereof

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160060492A1 (en) * 2014-09-02 2016-03-03 3M Innovative Properties Company Protection of new electro-conductors based on nano-sized metals using direct bonding with optically clear adhesives
JP6851721B2 (ja) * 2016-02-18 2021-03-31 リンテック株式会社 保護フィルム付き透明導電膜積層用フィルム、および透明導電性フィルムの製造方法
CN109804439B (zh) 2016-10-14 2022-02-11 C3内诺公司 经稳定化的稀疏金属导电膜及用于稳定化合物的递送的溶液
KR20190086530A (ko) 2016-12-20 2019-07-22 세이코 피엠씨 가부시키가이샤 내후성 향상제, 금속 나노 와이어층 피복용 수지 조성물 및 금속 나노 와이어 함유 적층체
KR20200108042A (ko) 2018-01-11 2020-09-16 미쓰비시 세이시 가부시키가이샤 도전 재료 및 처리 방법
US11842828B2 (en) 2019-11-18 2023-12-12 C3 Nano, Inc. Coatings and processing of transparent conductive films for stabilization of sparse metal conductive layers
US20230126120A1 (en) * 2020-06-17 2023-04-27 Seiko Pmc Corporation Silver nanowire dispersion, silver nanowire-containing conductor, and silver nanowire-containing conductive laminate
CN112765784A (zh) * 2020-12-30 2021-05-07 中国航天科工集团八五一一研究所 一种基于超饱和设计的雷达对抗性能分析方法

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3865786A (en) * 1970-10-20 1975-02-11 Ciba Geigy Corp Manganous organo phosphonate UV light absorbers for polyamides
US6777479B1 (en) * 1999-08-10 2004-08-17 Eastman Chemical Company Polyamide nanocomposites with oxygen scavenging capability
US20050014948A1 (en) * 2003-07-14 2005-01-20 Galbo James P. Hydrogen peroxide catalyzed process for the preparation of sterically hindered N-hydrocarbyloxyamines
WO2008143714A2 (en) * 2006-12-21 2008-11-27 Eikos, Inc. Protective coatings for porous conductive films and coatings
US20090226753A1 (en) 2008-03-10 2009-09-10 Fujifilm Corporation Metal nanowires, method for producing the same, and aqueous dispersion thereof
US20110018424A1 (en) * 2008-07-25 2011-01-27 Hiroshi Takada Transparent electrode and production method of same
WO2011125981A1 (ja) 2010-04-09 2011-10-13 富士フイルム株式会社 導電膜及びその製造方法、並びにタッチパネル及び太陽電池
US20120295071A1 (en) * 2009-12-28 2012-11-22 Toray Industries, Inc. Conductive laminated body and touch panel using the same
US20130087363A1 (en) 2011-10-11 2013-04-11 Korea Institute Of Science And Technology Metal nanowires with high linearity, method for producing the metal nanowires and transparent conductive film including the metal nanowires
US20130341571A1 (en) 2011-03-17 2013-12-26 Sumitomo Chemical Company, Limited Metallic composite composition and mixture thereof
US20140234661A1 (en) * 2013-02-15 2014-08-21 Cambrios Technologies Corporation Methods to incorporate silver nanowire-based transparent conductors in electronic devices

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101795419B1 (ko) * 2011-01-26 2017-11-13 주식회사 잉크테크 투명 도전막의 제조방법 및 이에 의해 제조된 투명 도전막
KR101675627B1 (ko) * 2011-04-28 2016-11-11 후지필름 가부시키가이샤 도전성 부재, 그 제조 방법, 터치 패널 및 태양 전지
JP5888976B2 (ja) * 2011-09-28 2016-03-22 富士フイルム株式会社 導電性組成物、導電性部材およびその製造方法、タッチパネル並びに太陽電池
KR101991676B1 (ko) * 2012-03-08 2019-06-21 주식회사 동진쎄미켐 투명 전극 형성용 전도성 잉크 조성물

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3865786A (en) * 1970-10-20 1975-02-11 Ciba Geigy Corp Manganous organo phosphonate UV light absorbers for polyamides
US6777479B1 (en) * 1999-08-10 2004-08-17 Eastman Chemical Company Polyamide nanocomposites with oxygen scavenging capability
US20050014948A1 (en) * 2003-07-14 2005-01-20 Galbo James P. Hydrogen peroxide catalyzed process for the preparation of sterically hindered N-hydrocarbyloxyamines
WO2008143714A2 (en) * 2006-12-21 2008-11-27 Eikos, Inc. Protective coatings for porous conductive films and coatings
US20090226753A1 (en) 2008-03-10 2009-09-10 Fujifilm Corporation Metal nanowires, method for producing the same, and aqueous dispersion thereof
US20110018424A1 (en) * 2008-07-25 2011-01-27 Hiroshi Takada Transparent electrode and production method of same
US20120295071A1 (en) * 2009-12-28 2012-11-22 Toray Industries, Inc. Conductive laminated body and touch panel using the same
WO2011125981A1 (ja) 2010-04-09 2011-10-13 富士フイルム株式会社 導電膜及びその製造方法、並びにタッチパネル及び太陽電池
US20130341571A1 (en) 2011-03-17 2013-12-26 Sumitomo Chemical Company, Limited Metallic composite composition and mixture thereof
US20130087363A1 (en) 2011-10-11 2013-04-11 Korea Institute Of Science And Technology Metal nanowires with high linearity, method for producing the metal nanowires and transparent conductive film including the metal nanowires
US20140234661A1 (en) * 2013-02-15 2014-08-21 Cambrios Technologies Corporation Methods to incorporate silver nanowire-based transparent conductors in electronic devices

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Int. Search Report cited in PCT Application No. PCT/US2015/021851 dated Apr. 2, 2015, 4 pgs.
Written Opinion cited in PCT Application No. PCT/US2015/021851 dated Apr. 2, 2015, 5 pgs.

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11513638B2 (en) * 2020-12-18 2022-11-29 Cambrios Film Solutions Corporation Silver nanowire protection layer structure and manufacturing method thereof

Also Published As

Publication number Publication date
US20150270024A1 (en) 2015-09-24
TW201541470A (zh) 2015-11-01
WO2015143383A1 (en) 2015-09-24
KR20160138165A (ko) 2016-12-02
KR102302408B1 (ko) 2021-09-16
EP3706142A1 (en) 2020-09-09
TWI686821B (zh) 2020-03-01
EP3120365B1 (en) 2021-05-19
CN106660312A (zh) 2017-05-10
SG10201906316UA (en) 2019-08-27
SG11201608455WA (en) 2016-11-29
EP3120365A1 (en) 2017-01-25
CN106660312B (zh) 2019-08-09

Similar Documents

Publication Publication Date Title
US10854350B2 (en) Light stability of nanowire-based transparent conductors
JP7330310B2 (ja) 安定化された薄く広がった金属導電性フィルム、および安定化化合物の供給のための溶液
Bi et al. Improved stability and photodetector performance of CsPbI3 perovskite quantum dots by ligand exchange with aminoethanethiol
JP6924789B2 (ja) パターン化された透明導電体の製造方法
Dong et al. Encapsulation of perovskite solar cells for high humidity conditions
Xie et al. Realizing reduced imperfections via quantum dots interdiffusion in high efficiency perovskite solar cells
TWI618756B (zh) 光學堆疊
JP6796065B2 (ja) 有機薄膜積層体及び有機エレクトロルミネッセンス素子
KR20160024640A (ko) 수성 조성물, 이를 이용한 전도성 박막 제조 방법과 이로부터 제조된 전도성 박막, 및 이를 포함하는 전자 소자
Shin et al. Light-induced crosslinking of perovskite nanocrystals for all-solution-processed electroluminescent devices
US20240161943A1 (en) Coatings and processing of transparent conductive films for stabilization of sparse metal conductive layers
Jayabharathi et al. Enhancement of electroluminescent green emission by far-field coupling of Au nanoparticles in organic light emitting diodes
CN105283782B (zh) 将基于银纳米线的透明导体并入电子设备中的方法
KR102212159B1 (ko) 은 나노와이어-기반 투명 전도성 필름을 형성하기 위한 아이오다이드 첨가제를 갖는 단쇄 플루오로계면활성제
KR20140107895A (ko) 금속 나노와이어를 포함하는 투명 도전체 및 이것의 제조방법
CN104914498A (zh) 光致变色偏光片以及有机发光显示装置

Legal Events

Date Code Title Description
AS Assignment

Owner name: CAMBRIOS TECHNOLOGIES CORPORATION, CALIFORNIA

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:ALLEMAND, PIERRE-MARC;REEL/FRAME:035328/0787

Effective date: 20150330

AS Assignment

Owner name: SEED IP LAW GROUP PLLC, WASHINGTON

Free format text: LIEN;ASSIGNOR:CAMBRIOS TECHNOLOGIES CORPORATION;REEL/FRAME:037760/0806

Effective date: 20160209

AS Assignment

Owner name: CAMBRIOS TECHNOLOGIES CORPORATION, CALIFORNIA

Free format text: RELEASE OF LIEN;ASSIGNOR:SEED IP LAW GROUP PLLC;REEL/FRAME:038146/0630

Effective date: 20160317

AS Assignment

Owner name: CHAMP GREAT INT'L CORPORATION, SEYCHELLES

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:CAMBRIOS TECHNOLOGIES CORPORATION;REEL/FRAME:038295/0845

Effective date: 20160316

AS Assignment

Owner name: CAM HOLDING CORPORATION, VIRGIN ISLANDS, BRITISH

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:CHAMP GREAT INTERNATIONAL CORPORATION;REEL/FRAME:040322/0944

Effective date: 20160909

AS Assignment

Owner name: CAMBRIOS FILM SOLUTIONS CORPORATION, VIRGIN ISLAND

Free format text: CHANGE OF NAME;ASSIGNOR:CAM HOLDING CORPORATION;REEL/FRAME:048172/0510

Effective date: 20180828

Owner name: CAMBRIOS FILM SOLUTIONS CORPORATION, VIRGIN ISLANDS, BRITISH

Free format text: CHANGE OF NAME;ASSIGNOR:CAM HOLDING CORPORATION;REEL/FRAME:048172/0510

Effective date: 20180828

AS Assignment

Owner name: INVENTIVE POWER LIMITED, TAIWAN

Free format text: SECURITY INTEREST;ASSIGNOR:CAMBRIOS FILM SOLUTIONS CORPORATION;REEL/FRAME:047297/0351

Effective date: 20171117

AS Assignment

Owner name: CAMBRIOS FILM SOLUTIONS CORPORATION, VIRGIN ISLANDS, BRITISH

Free format text: CHANGE OF NAME;ASSIGNOR:CAM HOLDING CORPORATION;REEL/FRAME:047508/0135

Effective date: 20180930

Owner name: CAMBRIOS FILM SOLUTIONS CORPORATION, VIRGIN ISLAND

Free format text: CHANGE OF NAME;ASSIGNOR:CAM HOLDING CORPORATION;REEL/FRAME:047508/0135

Effective date: 20180930

STPP Information on status: patent application and granting procedure in general

Free format text: RESPONSE TO NON-FINAL OFFICE ACTION ENTERED AND FORWARDED TO EXAMINER

STPP Information on status: patent application and granting procedure in general

Free format text: NON FINAL ACTION MAILED

STPP Information on status: patent application and granting procedure in general

Free format text: RESPONSE TO NON-FINAL OFFICE ACTION ENTERED AND FORWARDED TO EXAMINER

STPP Information on status: patent application and granting procedure in general

Free format text: FINAL REJECTION MAILED

STPP Information on status: patent application and granting procedure in general

Free format text: DOCKETED NEW CASE - READY FOR EXAMINATION

STPP Information on status: patent application and granting procedure in general

Free format text: RESPONSE TO NON-FINAL OFFICE ACTION ENTERED AND FORWARDED TO EXAMINER

STCF Information on status: patent grant

Free format text: PATENTED CASE

AS Assignment

Owner name: CAMBRIOS FILM SOLUTIONS CORPORATION, VIRGIN ISLANDS, BRITISH

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:INVENTIVE POWER LIMITED;REEL/FRAME:055633/0196

Effective date: 20210316

MAFP Maintenance fee payment

Free format text: PAYMENT OF MAINTENANCE FEE, 4TH YR, SMALL ENTITY (ORIGINAL EVENT CODE: M2551); ENTITY STATUS OF PATENT OWNER: SMALL ENTITY

Year of fee payment: 4