US10375763B2 - Temperature control apparatus, temperature control method and recording medium - Google Patents

Temperature control apparatus, temperature control method and recording medium Download PDF

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US10375763B2
US10375763B2 US15/090,879 US201615090879A US10375763B2 US 10375763 B2 US10375763 B2 US 10375763B2 US 201615090879 A US201615090879 A US 201615090879A US 10375763 B2 US10375763 B2 US 10375763B2
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temperature
divided area
target object
processing target
control apparatus
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US20160302258A1 (en
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Daisuke Hayashi
Masato Takayama
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B17/00—Furnaces of a kind not covered by any preceding group
    • F27B17/0016—Chamber type furnaces
    • F27B17/0025—Especially adapted for treating semiconductor wafers
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D21/00—Arrangements of monitoring devices; Arrangements of safety devices
    • F27D21/0014—Devices for monitoring temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B1/00—Details of electric heating devices
    • H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
    • H05B1/0227—Applications
    • H05B1/023—Industrial applications
    • H05B1/0233—Industrial applications for semiconductors manufacturing
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
    • H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
    • H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
    • H05B3/141—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds
    • H05B3/143—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds applied to semiconductors, e.g. wafers heating

Definitions

  • the embodiments described herein pertain generally to a temperature control apparatus, a temperature control method and a recording medium.
  • a temperature of a semiconductor wafer as a processing target object is one of important factors that determine a characteristic of the semiconductor device.
  • the temperature of the semiconductor wafer needs to be controlled with high precision.
  • there may be generated a non-uniform temperature distribution on the semiconductor wafer due to such factors as a temperature or a pressure of a processing gas, a flow of the processing gas, and the like.
  • the non-uniform temperature distribution of the semiconductor wafer may result in generation of non-uniformity in the characteristic of the semiconductor device which is manufactured by using the processed semiconductor wafer.
  • Patent Document 1 Japanese Patent Laid-open Publication No. H06-177141
  • Patent Document 2 Japanese Patent Laid-open Publication No. 2009-238773
  • the effect is very limiting.
  • the technique of controlling the temperatures of the heating areas individually such that the average temperature of each heating area becomes equal to the target temperature based on the temperature of the surface of the semiconductor wafer measured by the thermography unit although the average temperature of each heating area can be controlled to reach the target temperature, the non-uniformity in the temperature distribution on the semiconductor wafer may not necessarily be decreased but rather increased.
  • a temperature control apparatus of controlling a temperature of a processing target object includes a first temperature measurement unit, a second temperature measurement unit, a median value calculating unit, an offset calculating unit and a temperature control unit.
  • the first temperature measurement unit is configured to measure a temperature distribution over an entire top surface of the processing target object.
  • the second temperature measurement unit is configured to measure, for each of preset divided areas into which the top surface of the processing target object is divided, a temperature of a portion in the divided area.
  • the median value calculating unit is configured to calculate, for each divided area, a median value of a temperature distribution of the divided area, based on the temperature distribution over the entire top surface of the processing target object measured by the first temperature measurement unit.
  • the offset calculating unit is configured to calculate, for each divided area, a difference between the median value and the temperature of the top surface of the processing target object in the portion, whose temperature is measured by the second temperature measurement unit, as an offset.
  • the temperature control unit is configured to control, for each divided area, the temperature of the divided area such that the median value becomes equal to a set temperature, based on the offset and the temperature measured by the second temperature measurement unit.
  • a temperature control apparatus includes a first temperature measurement unit, a second temperature measurement unit, a median value calculating unit, an offset calculating unit and a temperature control unit.
  • the first temperature measurement unit is configured to measure a temperature distribution over an entire top surface of the processing target object.
  • the second temperature measurement unit is configured to measure, for each of preset divided areas into which the top surface of the processing target object is divided, a temperature of a portion in the divided area.
  • the median value calculating unit is configured to calculate, for each divided area, a median value of a temperature distribution of the divided area, based on the temperature distribution over the entire top surface of the processing target object measured by the first temperature measurement unit.
  • the offset calculating unit is configured to calculate, for each divided area, a difference between the median value and the temperature of the top surface of the processing target object in the portion, whose temperature is measured by the second temperature measurement unit, as an offset.
  • the temperature control unit is configured to control, for each divided area, the temperature of the divided area such that the median value becomes equal to a set temperature, based on the offset and the temperature measured by the second temperature measurement unit.
  • the first temperature measurement unit may be configured to measure, as the temperature distribution over the entire top surface of the processing target object, a temperature distribution of an entire area in a mounting surface of a mounting table on which the processing target object is mounted.
  • the mounting table may be configured to mount the processing target object thereon, and may comprise an electrostatic attraction unit configured to attract and hold the processing target object by an electrostatic force.
  • the temperature control unit may be configured to control, for each divided area, the temperature of the divided area such that a temperature calculated by adding the offset to the temperature measured by the second temperature measurement unit becomes equal to the set temperature.
  • the temperature control unit may be configured to control, for each divided area, the temperature of the divided area such that the temperature measured by the second temperature measurement unit becomes equal to a temperature calculated by subtracting the offset from the set temperature.
  • the first temperature measurement unit may be configured to divide the top surface of the processing target object into minute areas smaller than the divided areas and configured to measure a temperature of each minute area, based on an intensity of light having a preset wavelength range radiated from the minute area.
  • Each minute area may have a size equal to or less than 1 mm square on the top surface of the processing target object.
  • the first temperature measurement unit may be allowed to measure a temperature of a preset range within a temperature range from ⁇ 50° C. to +400° C.
  • the second temperature measurement unit may be implemented by a thermocouple.
  • the first temperature measurement unit and the second temperature measurement unit may have a temperature measurement resolution of 0.1° C. or less.
  • the temperature control unit may have a temperature control resolution of 0.1° C. or less.
  • a temperature control method of controlling a temperature of a processing target object includes measuring a temperature distribution over an entire top surface of the processing target object; measuring, for each of preset divided areas into which the top surface of the processing target object is divided, a temperature of a portion in the divided area; calculating, for each divided area, a median value of a temperature distribution of the divided area, based on the temperature distribution over the entire top surface of the processing target object; calculating, for each divided area, a difference between the median value and the temperature of the top surface of the processing target object in the portion, whose temperature is measured in the measuring of the temperature of the portion, as an offset; and controlling, for each divided area, the temperature of the divided area such that the median value becomes equal to a set temperature, based on the offset and the temperature measured in the measuring of the temperature of the portion.
  • a non-transitory computer-executable recording medium causes, in response to execution, a one or more processors to measure a temperature distribution over an entire top surface of a processing target object, which is measured by a first temperature measurement unit; measure, for each of preset divided areas into which the top surface of the processing target object is divided, a temperature of a portion in the divided area, which is measured by a second temperature measurement unit; calculate, for each divided area, a median value of a temperature distribution of the divided area, based on the temperature distribution over the entire top surface of the processing target object measured by the first temperature measurement unit; calculate, for each divided area, a difference between the median value and the temperature of the top surface of the processing target object in the portion, whose temperature is measured by the second temperature measurement unit, as an offset; and output, for each divided area, an instruction to control the temperature of each divided area such that the median value becomes equal to a set temperature to a temperature control unit, based on the offset and the temperature measured by the second temperature measurement unit.
  • FIG. 1 is a diagram illustrating an example of a processing system
  • FIG. 2 is a cross sectional view illustrating an example of a processing apparatus
  • FIG. 3 is a diagram illustrating an example of a top surface of an electrostatic chuck
  • FIG. 4 is a diagram illustrating an example of a cross section taken along a line A-A of FIG. 3 ;
  • FIG. 5 is a cross sectional view illustrating an example of the processing apparatus during a calibration process
  • FIG. 6 is a block diagram illustrating an example of a control apparatus
  • FIG. 7 is a diagram illustrating an example of a temperature distribution of a divided area
  • FIG. 8 is a diagram illustrating an example of a temperature distribution of another divided area
  • FIG. 9 is a diagram illustrating an example of a temperature distribution range when average values of the temperature distributions are made same.
  • FIG. 10 is a diagram illustrating an example of a temperature distribution range when median values of the temperature distributions are made same
  • FIG. 11 is a flowchart for describing an example operation of the control apparatus during the calibration process
  • FIG. 12 is a flowchart for describing an example operation of the control apparatus when a process on a semiconductor wafer is performed.
  • FIG. 13 is a diagram illustrating an example of a computer configured to implement a function of the control apparatus.
  • FIG. 1 is a diagram illustrating an example of a processing system 10 .
  • the processing system 10 includes, as illustrated in FIG. 1 , for example, a processing apparatus 100 and a control apparatus 200 .
  • the processing apparatus 100 is configured to perform a process such as a plasma etching process, a plasma CVD process or a heating process on a semiconductor wafer W.
  • the control apparatus 200 is configured to control the processing apparatus 100 to perform a preset processing on the semiconductor wafer W which is carried into the processing apparatus 100 , based on information sent from various kinds of sensors such as a temperature sensor provided in the processing apparatus 100 .
  • the control apparatus 200 is an example of a temperature control apparatus.
  • FIG. 2 is a cross sectional view illustrating an example of the processing apparatus 100 .
  • the processing apparatus 100 includes a processing chamber 1 which is hermetically configured and electrically grounded, as shown in FIG. 2 .
  • the processing chamber 1 is formed of, for example, aluminum having an anodically oxidized surface and has a substantially cylindrical shape.
  • a mounting table 2 configured to support the semiconductor wafer W as a processing target object thereon horizontally is provided within the processing chamber 1 .
  • the mounting table 2 includes a base 2 a made of a conductive metal, for example, aluminum or the like, and serves as a lower electrode.
  • the mounting table 2 is supported on a conductive supporting table 4 with an insulating plate 3 therebetween.
  • a focus ring 5 formed of, by way of example, but not limitation, single-crystalline silicon is provided on a periphery portion of a top surface of the mounting table 2 .
  • a cylindrical inner wall member 3 a made of, for example, quartz is provided to surround the mounting table 2 and the supporting table 4 .
  • a shower head 16 having a function as an upper electrode is provided above the mounting table 2 , while facing the mounting table 2 substantially in parallel, i.e., while facing the semiconductor wafer W placed on the mounting table 2 .
  • the shower head 16 and the mounting table 2 serve as a pair of electrodes (upper electrode and lower electrode).
  • the base 2 a of the mounting table 2 is connected to a high frequency power supply 12 a via a matching device 11 a . Further, the base 2 a of the mounting table 2 is also connected to a high frequency power supply 12 b via a matching device 11 b.
  • the high frequency power supply 12 a is configured to supply a high frequency power of a preset frequency (e.g., 100 MHz) for plasma generation to the base 2 a of the mounting table 2 .
  • the high frequency power supply 12 b is configured to supply a high frequency power of a predetermined frequency (e.g., 13 MHz) for ion attraction (bias) to the base 2 a of the mounting table 2 .
  • the frequency of the high frequency power from the high frequency power supply 12 b is lower than the frequency of the high frequency power from the high frequency power supply 12 a .
  • On/off operations of the high frequency power supplies 12 a and 12 b , the high frequency powers supplied by the high frequency power supplies 12 a and 12 b , and so forth are controlled by the control apparatus 200 to be described later.
  • An electrostatic chuck 6 configured to attract/hold and heat the semiconductor wafer W is provided on the top surface of the mounting table 2 .
  • the electrostatic chuck 6 includes an insulator 6 b , and an electrode 6 a and a heater 6 c embedded in the insulator 6 b .
  • the electrode 6 a is connected to a DC power supply 13 .
  • the heater 6 c is connected to a heater power supply 30 .
  • a Coulomb force is generated in a surface of the electrostatic chuck 6 by a DC voltage applied from the DC power supply 13 , and the electrostatic chuck 6 attracts and holds the semiconductor wafer W on a top surface thereof by the generated Coulomb force.
  • An on/off operation of the DC power supply 13 is controlled by the control apparatus 200 to be described later.
  • the electrostatic chuck 6 is also configured to heat the semiconductor wafer W by the heater 6 c which is heated by a power supplied from the heater power supply 30 .
  • the power supplied to the heater 6 c from the heater power supply 30 is controlled by the control apparatus 200 to be described later.
  • the top surface of the electrostatic chuck 6 is divided into a plurality of divided areas, and the heater 6 c is provided in each of the divided areas.
  • the electrostatic chuck 6 is an example of an electrostatic attraction unit.
  • a temperature sensor 20 is provided at a bottom surface of the electrostatic chuck 6 , and the temperature sensor 20 is connected to a temperature measuring device 14 .
  • the temperature sensor 20 is provided in each of the divided areas.
  • Each temperature sensor 20 is configured to detect information indicating a temperature of the electrostatic chuck 6 in each corresponding one of the divided areas and to output the detected information to the temperature measuring device 14 .
  • the temperature measuring device 14 is configured to measure the temperature of the electrostatic chuck 6 in each of the divided areas based on the information output from the temperature sensor 20 , and output the measured temperature to the control apparatus 200 .
  • a coolant path 2 b through which a coolant flows is provided within the mounting table 2 .
  • the coolant path 2 b is connected to a chiller unit 33 via pipelines 2 c and 2 d .
  • a coolant such as Galden supplied from the chiller unit 33 is circulated through the coolant path 2 b , so that the mounting table 2 is cooled.
  • a temperature and a flow rate of the coolant supplied from the chiller unit 33 are controlled by the control apparatus 200 to be described later.
  • the mounting table 2 is equipped with a pipeline 32 which penetrates through the mounting table 2 to supply a heat transfer gas (backside gas) such as a helium gas to a rear surface side of the semiconductor wafer W.
  • the pipeline 32 is connected to a heat transfer gas supply unit 31 .
  • a flow rate of the heat transfer gas supplied toward the rear surface side of the semiconductor wafer W from the heat transfer gas supply unit 31 through the pipeline 32 is controlled by the control apparatus 200 to be described later.
  • the control apparatus 200 is configured to control the semiconductor wafer W held on the top surface of the electrostatic chuck 6 to have a preset temperature by controlling the cooling by the coolant flowing through the coolant path 2 b , the heating by the heater 6 c within the electrostatic chuck 6 and the flow rate of the heat transfer gas which adjusts the amounts of the heats transferred to the semiconductor wafer W.
  • the shower head 16 is provided at an upper portion of the processing chamber 1 .
  • the shower head 16 includes a main body 16 a ; and a ceiling plate 16 b constituting an electrode plate.
  • the shower head 16 is supported at the upper portion of the processing chamber 1 with an insulating member 45 therebetween.
  • the main body 16 a is formed of, by way of non-limiting example, aluminum having an anodically oxidized surface, and supports the ceiling plate 16 b from above in a detachable manner.
  • a gas diffusion space 16 c is formed within the main body 16 a .
  • Gas through holes 16 e are formed in a bottom portion of the main body 16 a to be located under the gas diffusion space 16 c .
  • the ceiling plate 16 b is provided with a multiple number of gas discharge holes 16 f , each of which is formed through the ceiling plate 16 b in a thickness direction thereof.
  • Each of the gas discharge holes 16 f communicates with each corresponding one of the gas through holes 16 e .
  • the shower head 16 can be controlled to have a temperature within a required temperature range while processing the semiconductor wafer W.
  • the main body 16 a has a gas inlet opening 16 g through which the processing gas is introduced into the gas diffusion space 16 c .
  • One end of a pipeline 15 b is connected to the gas inlet opening 16 g , and the other end of the pipeline 16 b is connected, via a valve V and a mass flow controller (MFC) 15 a , to a processing gas supply source 15 configured to supply the processing gas for processing the semiconductor wafer W.
  • the processing gas supplied from the processing gas supply source 15 is introduced into the gas diffusion space 16 c through the pipeline 15 b , and then, discharged into the processing chamber 1 through the gas through holes 16 e and the gas discharge holes 16 f by being diffused as in a shower device.
  • the valve V and the MFC 15 a are controlled by the control apparatus 200 to be described later.
  • the shower head 16 is electrically connected to a variable DC power supply 42 via a low pass filter (LPF) 40 .
  • a supply of a DC power from the variable DC power supply 42 and a stop of the supply of the DC power are regulated by a switch 42 .
  • An electric current and a voltage from the variable DC power supply 42 and an on/off operations of the switch 41 are controlled by the control apparatus 200 to be described later.
  • the switch 41 is turned on by the control apparatus 200 , when necessary, and a preset DC voltage is applied to the shower head 16 serving as the upper electrode.
  • a gas exhaust opening 71 is formed in a bottom portion of the processing chamber 1 .
  • the gas exhaust opening 71 is connected to a gas exhaust device 73 via a gas exhaust pipe 72 .
  • the gas exhaust device 73 has a vacuum pump, and by operating this vacuum pump, the inside of the processing chamber 1 can be decompressed to a preset vacuum level.
  • An exhausted gas flow rate by the gas exhaust device 73 or the like is controlled by the control apparatus 200 to be described later.
  • an opening 74 is provided at a sidewall of the processing chamber 1 , and a gate valve G configured to open or close the opening 74 is provided at the opening 74 .
  • a deposition shield 76 is detachably provided along an inner wall of the processing chamber 1 . Further, a deposition shield 77 is provided to cover outer surfaces of the mounting table 2 serving as the lower electrode, the inner wall member 3 a and the supporting table 4 . The deposition shields 76 and 77 are configured to suppress an etching byproduct (deposit) from adhering to the inner wall of the processing chamber 1 . Further, a conductive member (GND block) 79 , which is DC-connected to the ground, is provided at a portion of the deposition shield 76 which is substantially level with a height position of the semiconductor wafer W held on the electrostatic chuck 6 . The conductive member 79 serves to suppress occurrence of an abnormal electric discharge within the processing chamber 1 .
  • ring magnets 80 are concentrically arranged around the processing chamber 1 .
  • the ring magnets 80 are configured to generate a magnetic field in a space between the shower head 16 and the mounting table 2 .
  • the ring magnets 80 are rotatably supported by a non-illustrated rotating device.
  • FIG. 3 is a diagram illustrating an example of the top surface of the electrostatic chuck 6 .
  • FIG. 4 is a diagram illustrating an example of a cross section taken along a line A-A of FIG. 3 .
  • a focus ring 5 is provided to surround the electrostatic chuck 6 .
  • the top surface of the electrostatic chuck 6 on which the semiconductor wafer W is mounted is divided into a multiple number of concentric divided areas 60 a to 60 d . In the following description, when it is not necessary to distinguish the divided areas 60 a to 60 d , they will be referred to as a “divided area 60 ” as a general term.
  • the heater 6 c is provided under each divided area 60 within the electrostatic chuck 6 .
  • the control apparatus 200 is capable of controlling temperatures of the respective divided areas 60 independently.
  • each divided area 60 at least one temperature sensor 20 is provided at the bottom surface of the electrostatic chuck 6 , as depicted in FIG. 4 , for example.
  • a single temperature sensor 20 is provided in each of an area 21 a within the divided area 60 a , an area 21 b within the divided area 60 b , an area 21 c within the divided area 60 c and an area 21 d within the divided area 60 d , as shown in FIG. 3 .
  • a single temperature sensor 20 is provided in an area 21 e of the focus ring 5 .
  • an area 21 when it is not necessary to distinguish the areas 21 a to 21 e , they will be referred to as an “area 21 ” as a general term.
  • the temperature sensor 20 includes, as shown in FIG. 4 , for example, a temperature sensing body 22 and a detecting unit 23 .
  • a characteristic of the temperature sensing body 22 is changed depending on a temperature thereof.
  • the temperature sensing body 22 is a fluorescent substance, and the fluorescent characteristic thereof is changed depending on the temperature of the electrostatic chuck 6 .
  • the detecting unit 23 is configured to detect the characteristic of the temperature sensing body 22 which is changed depending on the temperature thereof and to output the detecting result to the temperature measuring device 14 .
  • the detecting unit 23 is, by way of example, but not limitation, an optical fiber, and is configured to irradiate pulse light output from the temperature measuring device 14 to the temperature sensing body 22 , and transmit light emitted from the temperature sensing body 22 according to the irradiated pulse light to the temperature measuring device 14 .
  • the temperature measuring device 14 is configured to measure the temperature of each divided area 60 based on a signal output from the temperature sensor 20 which is provided in the corresponding divided area 60 , and is also configured to output the information of the temperature of the corresponding divided area 60 to the control apparatus 200 .
  • the temperature measuring device 14 transmits the pulse light to the temperature sensing body 22 through the detecting unit 23 and, based on an extinguish rate of the temperature sensing body 22 output from the detecting unit 23 , the temperature measuring device 14 measures the temperature of the divided area 60 in which the corresponding temperature sensing body 22 is provided.
  • the temperature measuring device 14 is capable of measuring a temperature of a preset range within a temperature range from ⁇ 50° C. to 400° C. Further, it is desirable that a temperature resolution of the temperature measuring device 14 is equal to or less than 0.1° C.
  • the temperature sensor 20 and the temperature measuring device 14 are an example of a second temperature measurement unit.
  • FIG. 5 is a cross sectional view illustrating an example of the processing apparatus 100 in a calibration process.
  • the shower head 16 described with reference to FIG. 1 is separated from the processing chamber 1 , and a calibration unit 50 as illustrated in FIG. 5 , for example, is mounted to the processing chamber 1 .
  • the calibration unit 50 includes a thermo viewer 51 and a cover member 52 .
  • the cover member 52 is configured to support the thermo viewer 51 such that a measurement direction of the thermo viewer 51 is towards the electrostatic chuck 6 .
  • the thermo viewer 51 measures a temperature of each of minute areas having a preset size from an intensity of light having a preset wavelength range radiated from each minute area.
  • the thermo viewer 51 is also configured to output the measured temperature of each of the minute areas to the control apparatus 200 as a temperature distribution.
  • the thermo viewer 51 is an example of a first temperature measurement unit.
  • the thermo viewer 51 is a radiation thermometer configured to measure a temperature of each minute area from an intensity of an infrared ray radiated from the corresponding minute area.
  • the thermo viewer 51 is configured to measure a temperature distribution over the entire top surface of the electrostatic chuck 6 during the calibration process of the temperature sensor 20 .
  • the thermo viewer 51 is capable of measuring a temperature of the top surface of the electrostatic chuck 6 in every minute area having a size equal to or less than, for example, 1 mm square.
  • the minute area, the temperature of which is measured by the thermo viewer 51 is smaller than the divided area 60 on the electrostatic chuck 6 .
  • the thermo viewer 51 is capable of measuring a temperature of a preset range within a temperature range from ⁇ 50° C. to +400° C. Further, desirably, a temperature resolution of the thermo viewer 51 is equal to or less than 0.1° C.
  • FIG. 6 is a block diagram illustrating an example of the control apparatus 200 .
  • the control apparatus 200 includes, as depicted in FIG. 6 , for example, a first acquiring unit 201 , a median value calculating unit 202 , a second acquiring unit 203 , an offset calculating unit 204 , a temperature control unit 205 , a storage unit 206 and a processing control unit 207 .
  • the first acquiring unit 201 is configured to acquire information of the temperature distribution output from the thermo viewer 51 during the calibration process.
  • the first acquiring unit 201 is also configured to output the acquired information of the temperature distribution to the median value calculating unit 202 .
  • the median value calculating unit 202 is configured to calculate a median value of a temperature distribution range of each divided area 60 on the top surface of the electrostatic chuck 6 based on the information of the temperature distribution output from the first acquiring unit 201 during the calibration process. Further, the median value calculating unit 202 is also configured to output the calculated median value of each divided area 60 to the offset calculating unit 204 .
  • the median value calculating unit 202 specifies a maximum value and a minimum value of the temperature of each divided area 60 based on the information of the temperature distribution output from the first acquiring unit 201 . Then, the median value calculating unit 202 calculates 1 ⁇ 2 of a sum of the maximum temperature and the minimum temperature as the median value of each divided area 60 .
  • the second acquiring unit 203 is configured to acquire information of the measured temperature of each divided area 60 from the temperature measuring device 14 . Further, the second acquiring unit 203 is also configured to output the acquired information of the temperature of each divided area 60 to the offset calculating unit 204 and the temperature control unit 205 .
  • the offset calculating unit 204 is configured to calculate, for each divided area 60 , an offset based on the median value output from the median value calculating unit 202 and the information of the temperature output from the second acquiring unit 203 . According to the present exemplary embodiment, the offset calculating unit 204 calculates, for each divided area 60 , a difference between the temperature output from the second acquiring unit 203 and the median value output from the median value calculating unit 202 as the offset. The offset calculating unit 204 is also configured to store the offset calculated for each divided area 60 in the storage unit 206 .
  • the temperature control unit 205 is configured to control the temperature of each divided area 60 such that the temperature of each divided area 60 output from the second acquiring unit 203 becomes equal to a set temperature output from the processing control unit 207 .
  • the temperature control unit 205 controls the temperature of each divided area 60 by controlling the temperature and the flow rate of the coolant by the chiller unit 33 , the power of the heater power supply 30 provided in each divided area 60 , and so forth.
  • the temperature control unit 205 may control the temperature of each divided area 60 with the temperature resolution equal to or less than 0.1° C.
  • the temperature control unit 205 is configured to control the temperature of each divided area 60 by using the temperature information of each divided area 60 obtained by the temperature sensor 20 and output from the second acquiring unit 203 , the offset of each divided area 60 stored in the storage unit 206 , and the set temperature output from the processing control unit 207 .
  • the control unit 205 controls the temperature of each divided area 60 such that the median value of the temperature distribution range calculated by the median value calculating unit 202 becomes equal to the set temperature output from the processing control unit 207 based on the information of the offset stored in the storage unit 206 and the information of the temperature output from the second acquiring unit 203 .
  • the processing control unit 207 is configured to output the set temperature to the temperature control unit 205 based on a recipe, which is set by an operator of the processing apparatus 100 or the like when the calibration process and the processing on the semiconductor wafer W are performed. Further, the processing control unit 207 is also configured to control individual components of the processing apparatus 100 based on a recipe which is set by the operator of the processing apparatus 100 or the like. Furthermore, it is desirable that the set temperature during the calibration process is equal to the set temperature during the processing of the semiconductor wafer W.
  • FIG. 7 is a diagram illustrating an example of a temperature distribution of a divided area 60 .
  • the calibration is performed in the thermo viewer 51
  • FIG. 7 depicts a temperature distribution measured by the thermo viewer 51 .
  • T max1 denotes a maximum value of the temperature distribution
  • T min1 refers to a minimum value of the temperature distribution.
  • a median value T mid1 is equivalent to 1 ⁇ 2 of a sum of the maximum value T max1 and the minimum value T min1 .
  • the median value T mid1 of the temperature distribution and an average value T ave1 of the temperature distribution may not necessarily same.
  • the temperature sensor 20 is provided at a position x.
  • a temperature measured by the temperature sensor 20 before the calibration process is performed includes a measurement error. For this reason, as illustrated in FIG. 7 , even if the temperature of the divided area 60 at the position x is T 0 , the temperature of the divided area 60 may be measured to be T 1 by the temperature sensor 20 . In this case, there is an error ⁇ T e between the actual temperature T 0 of the divided area 60 and the temperature T 1 measured by the temperature sensor 20 .
  • the temperature T 0 of the divided area 60 at the position x where the temperature sensor 20 is provided does not necessarily equal to the median value T mid1 of the temperature distribution range of the divided area 60 .
  • the offset calculating unit 204 calculates an offset ⁇ T off through the following equation by using the error ⁇ T e and the temperature difference ⁇ T d .
  • the temperature control unit 205 when the processing of the semiconductor wafer W is performed, the temperature control unit 205 adds the offset ⁇ T off to the temperature T 1 output from the second acquiring unit 203 for each divided area 60 , and controls the heater power supply 30 corresponding to each divided area 60 and the like such that the added temperature becomes equal to the set temperature output from the processing control unit 207 . Accordingly, the temperature control unit 205 controls the measured temperature T 1 of each divided area 60 to be lower than the set temperature by the offset ⁇ T off . Therefore, in each divided area 60 , the median value T mid1 of the temperature distribution range is controlled to be equal to the set temperature.
  • the temperature distributions of the individual divided areas 60 of the electrostatic chuck 6 may not necessarily be same. As illustrated in FIG. 8 , for example, it is assumed that the electrostatic chuck 6 has another divided area 60 having a temperature distribution different from that shown in FIG. 7 . In the temperature distribution depicted in FIG. 8 , an average value T ave1 of the temperature distribution is lower than a median value T mid2 of the temperature distribution range. Meanwhile, in the temperature distribution depicted in FIG. 7 , the average value T ave1 of the temperature distribution is higher than the median value T mid1 of the temperature distribution range.
  • a temperature distribution in the two divided areas 60 is in a range ⁇ T′ from the minimum value T min1 of the temperature distribution shown in FIG. 7 to the maximum value T max2 of the temperature distribution depicted in FIG. 8 .
  • the range ⁇ T′ of the temperature distribution in the two divided areas 60 is equal to or higher than, e.g., 1° C., which is larger than the ranges of both of the temperature distributions ⁇ T 1 and ⁇ T 2 .
  • the temperature control unit 205 controls the temperature of the divided area 60 having the temperature distribution shown in FIG. 7 and the temperature of the divided area 60 having the temperature distribution shown in FIG. 8 such that the median values of these temperature distributions are same. Accordingly, the temperature distributions of the two divided areas 60 are as depicted in FIG. 10 , for example. Referring to FIG. 10 , a temperature distribution in the two divided areas 60 is in a range ⁇ T from the minimum value T min1 of the temperature distribution shown in FIG. 7 to the maximum value T max1 of the temperature distribution depicted in FIG. 7 .
  • the processing system 10 is capable of improving temperature uniformity over the entire surface of the semiconductor wafer W which is mounted on the electrostatic chuck 6 .
  • the temperature control unit 205 is capable of suppressing the range of the temperature distribution in the whole of the divided areas 60 to be 1° C. or less. Further, the temperature control unit 205 controls the temperature of each divided area 60 such that the median value of the temperature distribution of each divided area 60 reaches the set temperature. Accordingly, in the temperature distribution on the electrostatic chuck 6 , a difference between the set temperature and a temperature most deviated from the set temperature can be reduced.
  • FIG. 11 is a flowchart illustrating an example of an operation of the control apparatus 200 when a calibration process is performed.
  • the calibration unit 50 is mounted to the processing chamber 1 instead of, for example, the shower head 16 . Then, in response to an instruction from the operator instructing that the calibration process be performed, the control apparatus 200 starts the operation depicted in the flowchart of FIG. 11 .
  • the processing control unit 207 controls the individual components of the processing apparatus 100 based on the recipe in which the internal pressure of the processing chamber 1 during the calibration process and the like is specified. Then, the processing control unit 207 outputs a set temperature for the calibration process to the temperature control unit 205 .
  • the temperature control unit 205 controls the heater power supply 30 or the like such that a temperature of each divided area 60 measured by the temperature sensor 20 reaches the set temperature output from the processing control unit 207 based on the information of the temperature output from the second acquiring unit 203 (S 100 ).
  • the first acquiring unit 201 allows the thermo viewer 51 to measure a temperature distribution on the top surface of the electrostatic chuck 6 , and acquires information of the temperature distribution from the thermo viewer 51 (S 101 ). Thereafter, the first acquiring unit 201 outputs the acquired information of the temperature distribution to the median value calculating unit 202 .
  • the median value calculating unit 202 specifies a maximum value and a minimum value of the temperature of each divided area 60 based on the information of the temperature distribution output from the first acquiring unit 201 . Then, for each divided area 60 , the median value calculating unit 202 calculates 1 ⁇ 2 of a sum of the maximum value and the minimum value as a median value of the range of the temperature distribution (S 102 ).
  • the offset calculating unit 204 calculates a difference between the temperature measured by the temperature sensor 20 and the median value output from the median value calculating unit 202 as an offset (S 103 ). Then, the offset calculating unit 204 stores the offset of each divided area 60 in the storage unit 206 (S 104 ). Then, the control apparatus 200 ends the operation described in the flowchart of FIG. 11 .
  • the temperature control unit 205 controls the heater 6 c provided in each divided area 60 such that the temperature of each divided area measured by the temperature sensor 20 reaches 60° C. If the maximum value T max1 and the minimum value T min1 of the temperature distribution of the certain divided area 60 are 65° C. and 59° C., respectively, the median value calculating unit 202 calculates 62° C. as the median value T mid1 of the temperature distribution of the corresponding divided area 60 . Further, since the temperature measured by the temperature sensor 20 is controlled to be 60° C. by the temperature control unit 205 , the temperature T 1 measured by the temperature sensor 20 becomes equal to 60° C.
  • the temperature control unit 205 performs a control such that a temperature calculated by adding the offset to the temperature of each divided area 60 measured by the temperature sensor 20 becomes equal to the set temperature output from the processing control unit 207 , and the median value calculating unit 202 calculates the median value of the temperature distribution of each divided area 60 based on the information of the temperature distribution output from the first acquiring unit 201 . Further, for each divided area 60 , the processing control unit 207 may determine whether a difference between the median value of the temperature distribution and the set temperature is smaller than a preset value (e.g., 0.1° C.).
  • a preset value e.g., 0.1° C.
  • control apparatus 200 ends the operation shown in FIG. 11 . Meanwhile, if there is any divided area 60 where the difference between the median value of the temperature distribution and the set temperature is equal to or larger than the preset value, the control apparatus 200 may perform the operation shown in FIG. 11 again, starting from process S 100 .
  • FIG. 12 is a flowchart illustrating an example of an operation of the control apparatus 200 when a processing on the semiconductor wafer W is performed. After the semiconductor wafer W is loaded into the processing apparatus 100 shown in FIG. 2 , for example, the control apparatus 200 begins the operation shown in the flowchart of FIG. 12 in response to an instruction from the operator instructing that the processing on the semiconductor wafer W be performed.
  • FIG. 12 depicts the operation of the control apparatus 200 for a single divided area 60 .
  • the control apparatus 200 performs the operation shown in FIG. 12 for each of the divided areas 60 .
  • the operation of the control apparatus 200 regarding a temperature control of the semiconductor wafer W is described, and a control of a pressure within the processing chamber 1 , a control of a high frequency power applied to the mounting table 2 , a control of a flow rate of a processing gas, and so forth are controlled by control signals sent from the processing control unit 207 to the processing apparatus 100 according to the processing recipe.
  • the processing control unit 207 outputs a set temperature for the processing of the semiconductor wafer W to the temperature control unit 205 based on the processing recipe.
  • the temperature control unit 205 reads out the offset of the divided area 60 from the storage unit 206 (S 200 ). Then, the temperature control unit 205 acquires information of a temperature measured by the temperature sensor 20 from the second acquiring unit 203 (S 201 ).
  • the temperature control unit 205 adds the offset, which is read out in the process S 200 , to the temperature measured by the temperature sensor 20 (S 202 ). Then, the temperature control unit 205 determines whether a difference between the offset-added temperature (i.e., the temperature to which the offset is added) and the set temperature output from the processing control unit 207 is below a preset value (e.g., 0.1° C.) (S 203 ).
  • a preset value e.g., 0.1° C.
  • the temperature control unit 205 controls the heater power supply 30 and so forth based on the difference between the offset-added temperature and the set temperature output from the processing control unit 207 (S 205 ). Then, the temperature control unit 205 performs the process S 201 again.
  • the processing control unit 207 determines whether the processing of the semiconductor wafer W is finished, based on the processing recipe. In case that the processing of the semiconductor wafer W is not completed (S 204 ; No), the temperature control unit 205 performs the process S 201 again. Meanwhile, in case that the processing of the semiconductor wafer W is completed (S 204 ; Yes), the control apparatus 200 ends the operations depicted in the flowchart of FIG. 12 .
  • the temperature control unit 205 adds the offset ⁇ T off , i.e., +2° C. to the temperature T 1 measured by the temperature sensor 20 provided in this divided area 60 .
  • the temperature control unit 205 controls a power of the heater 6 c provided in this divided area 60 such that the sum of T 1 +2° C. becomes equal to the set temperature, i.e., 60° C.
  • the overall temperature distribution of the corresponding divided area 60 is controlled to be lower than the set temperature by the offset ⁇ T off , (i.e., +2° C.), for example, controlled to be 58° C. Accordingly, the median value T mid1 of the temperature distribution range becomes 60° C., and the median value T mid1 is made to be equal to the set temperature. Further, as the temperature control unit 205 controls the power of the heater 6 c of each divided area 60 such that the sum of the temperature measured by the temperature sensor 20 of each divided area 60 and the offset becomes equal to the set temperature, so that the median value of the temperature distribution of each divided area 60 can be made to approach the set temperature.
  • the offset ⁇ T off i.e., +2° C.
  • the temperature control unit 205 controls the temperature of the corresponding divided area 60 such that the overall temperature distribution becomes higher than the set temperature by the offset ⁇ T off .
  • the temperature control unit 205 controls the temperature of the divided area 60 such that the temperature distribution of this divided area 60 becomes 62° C., which is higher than 60° C. by 2° C.
  • the exemplary embodiments have been described. According to the processing system 10 of the present exemplary embodiments, the temperature uniformity over the entire surface of the semiconductor wafer W can be improved.
  • the control apparatus 200 may be implemented by a computer 90 as illustrated in FIG. 13 , for example.
  • FIG. 13 is a diagram showing an example of the computer 90 configured to perform the operations of the control apparatus 200 .
  • the computer 90 includes a CPU (Central Processing Unit) 91 , a RAM (Random Access Memory) 92 , a ROM (Read Only Memory) 93 , an auxiliary memory device 94 , a communication interface (I/F) 95 , an input/output interface (I/F) 96 and a media interface (I/F) 97 .
  • CPU Central Processing Unit
  • RAM Random Access Memory
  • ROM Read Only Memory
  • the CPU 91 is operated based on a program stored in the ROM 93 or the auxiliary memory device 94 and is configured to control the individual components of the apparatus.
  • the ROM 93 is configured to store therein a boot program executed by the CPU 91 at the time of starting the computer 90 , a program dependent on the hardware of the computer 90 , and so forth.
  • the auxiliary memory device 94 is implemented by, for example, a HDD (Hard Disk Drive), a SSR (Solid State Drive), or the like, and is configured to store therein a program executed by the CPU 91 , data used by this corresponding program, and so forth.
  • the CPU 91 is configured to read the corresponding program from the auxiliary memory device 94 , load the program onto the RAM 92 and execute the loaded program.
  • the communication I/F 95 is configured to communicate with the processing apparatus 100 through a communication line such as a LAN (Local Area Network). Specifically, the communication I/F 95 is configured to receive data from the processing apparatus 100 , send the received data to the CPU 91 and output data generated by the CPU 91 to the processing apparatus 100 through the communication line.
  • a communication line such as a LAN (Local Area Network).
  • the communication I/F 95 is configured to receive data from the processing apparatus 100 , send the received data to the CPU 91 and output data generated by the CPU 91 to the processing apparatus 100 through the communication line.
  • the CPU 91 is also configured to control an input device such as a keyboard and an output device such as a display through the input/output I/F 96 . Specifically, the CPU 91 is configured to acquire a signal input from the input device and send the acquired signal to the CPU 91 through the input/output I/F 96 . Further, the CPU 91 is further configured to output the data generated by the CPU 91 to the output device through the input/output I/F 96 .
  • the media I/F 97 is configured to read a program or data stored in a recording medium 98 and store the program or the data in the auxiliary memory device 94 .
  • the recording medium 98 may be implemented by, for example, but not limitation, an optical recording medium such as a DVD (Digital Versatile Disc) or a PD (Phase change rewritable Disk), a magneto-optical recording medium such as a MO (Magneto-Optical disk), a tape medium, a magnetic recording medium, a semiconductor memory, or the like.
  • the CPU 91 of the computer 90 performs the operations of the first acquiring unit 201 , the median value calculating unit 202 , the second acquiring unit 203 , the offset calculating unit 204 , the temperature control unit 205 , the storage unit 206 and the processing control unit 207 by executing the program loaded on the RAM 92 . Further, the data in the storage unit 206 is also stored in the auxiliary memory device 94 .
  • the CPU 91 of the computer 90 is configured to read the program, which is loaded onto the RAM 92 , from the recording medium 98 and store the program in the auxiliary memory device 94 .
  • the program may be acquired from another apparatus through a communication line and stored in the auxiliary memory device 94 .
  • the thermo viewer 51 is configured to measure the temperature distribution over the top surface of the electrostatic chuck 6 during the calibration process.
  • the exemplary embodiments are not limited thereto.
  • the thermo viewer 51 may measure a temperature distribution over a top surface of the semiconductor wafer W placed on the electrostatic chuck 6 .
  • the thermo viewer 51 is capable of measuring a temperature distribution closer to the temperature distribution on the semiconductor wafer W which is actually processed. Further, in case that the semiconductor wafer W is made of silicon, an infrared ray is transmitted through the silicon.
  • thermo viewer 51 is a radiation thermometer using an infrared ray, it is difficult to measure the temperature distribution on the semiconductor wafer W by the thermo viewer 51 .
  • the temperature distribution on the semiconductor wafer W is measured by the thermo viewer 51 by using the semiconductor wafer W colored with, for example, black.
  • the calibration process according to the above-described exemplary embodiments may be performed whenever a preset number of semiconductor wafers W is processed. Further, the operator or the like may monitor the calculated offset whenever the calibration process is performed, so that a change in the processing apparatus 100 with the lapse of time can be monitored.
  • the control apparatus 200 calculates the offset of each divided area 60 based on the temperature distribution on the top surface of the electrostatic chuck 6 which is measured by the thermo viewer 51 .
  • the exemplary embodiment is not limited thereto.
  • the temperature distribution of each divided area 60 may be measured by using a semiconductor wafer W for temperature distribution measurement, which is equipped with temperature sensors provided at plural positions thereon.
  • each temperature sensor transmits, to the control apparatus 200 by wireless communication, information of a temperature at the position where the temperature sensor is provided.
  • the first acquiring unit 201 of the control apparatus 200 specifies the temperature at each position of the semiconductor wafer W as the temperature distribution by using the information of the temperature sent from each temperature sensor.
  • the semiconductor wafer W for an actual processing As the semiconductor wafer W at which the temperature sensors are provided, it is possible to measure the temperature distribution on the semiconductor wafer W in an environment similar to the actual processing environment. Hence, the temperature uniformity over the surface of the semiconductor wafer W can be further improved.
  • the temperature control unit 205 controls the power of the heater 6 c of each divided area 60 such that the sum of the temperature measured by the temperature sensor 20 and the offset becomes the set temperature.
  • the exemplary embodiment may not be limited thereto.
  • the temperature control unit 205 may control the power of the heater 6 c of each divided area 60 such that the temperature of each divided area 60 measured by the temperature sensor 20 becomes a temperature calculated by subtracting the offset from the set temperature.
  • the temperature sensor 20 provided in each divided area 60 is configured to measure the temperature of each divided area 60 based on, for example, the extinguish rate of the fluorescent substance, whose fluorescence characteristic is changed depending on the temperature thereof.
  • the exemplary embodiment is not limited thereto.
  • the temperature sensor 20 provided in each divided area 20 may be implemented by, for example, but not limitation, a thermocouple or the like as long as it is a sensor configured to measure the temperature of the divided area 60 .

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Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10725485B2 (en) * 2016-12-15 2020-07-28 Lam Research Corporation System and method for calculating substrate support temperature
JP6918554B2 (ja) * 2017-04-06 2021-08-11 東京エレクトロン株式会社 可動体構造及び成膜装置
KR20190138315A (ko) * 2017-05-03 2019-12-12 어플라이드 머티어리얼스, 인코포레이티드 고온 세라믹 가열기 상의 통합형 기판 온도 측정
US10608145B2 (en) * 2017-05-05 2020-03-31 Applied Materials, Inc. Illumination device for desorbing molecules from inner walls of a processing chamber
US11222783B2 (en) * 2017-09-19 2022-01-11 Taiwan Semiconductor Manufacturing Co., Ltd. Using cumulative heat amount data to qualify hot plate used for postexposure baking
CN108766906A (zh) * 2018-05-04 2018-11-06 上海华力集成电路制造有限公司 降低晶圆的边沿热量流失的装置
CN111415887A (zh) * 2020-03-27 2020-07-14 宁波润华全芯微电子设备有限公司 一种晶圆加热装置
DE102020209549A1 (de) 2020-07-29 2022-03-24 Ers Electronic Gmbh Kalibrierungsanordnung und entsprechendes Kalibrierungsverfahren sowie Kalibrierungsvorrichtung
CN115590056B (zh) * 2022-09-22 2023-12-01 上海盘点食品科技有限公司 通过控制温湿度解冻肉制品的方法和设备
CN117328029A (zh) * 2023-09-21 2024-01-02 北京北方华创微电子装备有限公司 温度控制方法、装置和计算机可读介质

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06177141A (ja) 1992-12-08 1994-06-24 Toshiba Corp 熱処理装置
US20080170969A1 (en) * 2007-01-17 2008-07-17 Ken Yoshioka Plasma processing apparatus
JP2009238773A (ja) 2008-03-25 2009-10-15 Mitsui Eng & Shipbuild Co Ltd ウェハ熱処理装置における温度計測方法、並びに温度制御方法
US20100111511A1 (en) 2008-10-31 2010-05-06 Nir Merry Use of infrared camera for real-time temperature monitoring and control
US20110181313A1 (en) * 2010-01-27 2011-07-28 Tokyo Electron Limited Evaluation device and evaluation method for substrate mounting apparatus and evaluation substrate used for the same
US8092637B2 (en) * 2008-02-28 2012-01-10 Hitachi High-Technologies Corporation Manufacturing method in plasma processing apparatus

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH118180A (ja) * 1997-06-17 1999-01-12 Sony Corp ベーキング装置
JP3764689B2 (ja) * 2002-03-04 2006-04-12 株式会社ルネサステクノロジ 半導体製造方法および半導体製造装置
JP2008141086A (ja) * 2006-12-05 2008-06-19 Dainippon Screen Mfg Co Ltd 基板処理装置
KR20080109981A (ko) * 2007-06-14 2008-12-18 주식회사 아이피에스 웨이퍼 가열 장치 제어 시스템, 및 방법
JP5973731B2 (ja) * 2012-01-13 2016-08-23 東京エレクトロン株式会社 プラズマ処理装置及びヒータの温度制御方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06177141A (ja) 1992-12-08 1994-06-24 Toshiba Corp 熱処理装置
US20080170969A1 (en) * 2007-01-17 2008-07-17 Ken Yoshioka Plasma processing apparatus
US8092637B2 (en) * 2008-02-28 2012-01-10 Hitachi High-Technologies Corporation Manufacturing method in plasma processing apparatus
JP2009238773A (ja) 2008-03-25 2009-10-15 Mitsui Eng & Shipbuild Co Ltd ウェハ熱処理装置における温度計測方法、並びに温度制御方法
US20100111511A1 (en) 2008-10-31 2010-05-06 Nir Merry Use of infrared camera for real-time temperature monitoring and control
US8150242B2 (en) * 2008-10-31 2012-04-03 Applied Materials, Inc. Use of infrared camera for real-time temperature monitoring and control
US20110181313A1 (en) * 2010-01-27 2011-07-28 Tokyo Electron Limited Evaluation device and evaluation method for substrate mounting apparatus and evaluation substrate used for the same

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