US10176965B1 - Aberration-corrected multibeam source, charged particle beam device and method of imaging or illuminating a specimen with an array of primary charged particle beamlets - Google Patents

Aberration-corrected multibeam source, charged particle beam device and method of imaging or illuminating a specimen with an array of primary charged particle beamlets Download PDF

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US10176965B1
US10176965B1 US15/642,147 US201715642147A US10176965B1 US 10176965 B1 US10176965 B1 US 10176965B1 US 201715642147 A US201715642147 A US 201715642147A US 10176965 B1 US10176965 B1 US 10176965B1
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charged particle
particle beam
array
specimen
beamlets
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US20190013176A1 (en
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John Breuer
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ICT Integrated Circuit Testing Gesellschaft fuer Halbleiterprueftechnik mbH
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ICT Integrated Circuit Testing Gesellschaft fuer Halbleiterprueftechnik mbH
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Assigned to ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH reassignment ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: BREUER, JOHN
Priority to TW109116343A priority patent/TWI751556B/zh
Priority to TW107122870A priority patent/TWI691997B/zh
Priority to CN202010960020.9A priority patent/CN112233960A/zh
Priority to CN201810724460.7A priority patent/CN109216143B/zh
Priority to KR1020180078184A priority patent/KR102109963B1/ko
Priority to NL2021253A priority patent/NL2021253B1/nl
Priority to US16/210,554 priority patent/US10784072B2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/10—Lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/10—Lenses
    • H01J37/12—Lenses electrostatic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/10—Lenses
    • H01J37/145—Combinations of electrostatic and magnetic lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1472—Deflecting along given lines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/153—Electron-optical or ion-optical arrangements for the correction of image defects, e.g. stigmators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/043—Beam blanking
    • H01J2237/0435—Multi-aperture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/045—Diaphragms
    • H01J2237/0451—Diaphragms with fixed aperture
    • H01J2237/0453—Diaphragms with fixed aperture multiple apertures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/151—Electrostatic means
    • H01J2237/1516—Multipoles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/153—Correcting image defects, e.g. stigmators
    • H01J2237/1534—Aberrations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24592—Inspection and quality control of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2813—Scanning microscopes characterised by the application
    • H01J2237/2817—Pattern inspection

Definitions

  • Embodiments relate to charged particle beam devices, for example, for inspection system applications, testing system applications, defect review or critical dimensioning applications or the like. Embodiments also relate to methods of operation of a charged particle beam device. More particularly, embodiments relate to charged particle beam devices being multi-beam systems for general purposes (such as imaging biological structures) and/or for high throughput EBI (electron beam inspection). Specifically, embodiments relate to a scanning charged particle beam device and a method of electron beam inspection with a scanning charged particle beam device.
  • Modern semiconductor technology is highly dependent on an accurate control of the various processes used during the production of integrated circuits. Accordingly, the wafers are inspected repeatedly in order to localize problems as early as possible. Furthermore, a mask or reticle is also inspected before the actual use during wafer processing in order to make sure that the mask accurately defines the respective pattern.
  • the inspection of wafers or masks for defects includes the examination of the whole wafer or mask area. Especially, the inspection of wafers during the fabrication includes the examination of the whole wafer area in such a short time that production throughput is not limited by the inspection process.
  • SEM Scanning electron microscopes
  • the surface of the wafer is scanned using, e.g., a single finely focused electron beam.
  • secondary electrons and/or backscattered electrons i.e. signal electrons
  • a pattern defect at a location on the wafer is detected by comparing an intensity signal of the secondary electrons to, for example, a reference signal corresponding to the same location on the pattern.
  • SEM single-beam scanning electron microscope
  • Wafer and mask defect inspection in semiconductor technology needs high resolution and fast inspection tools, which cover both full wafer/mask application or hot spot inspection.
  • Electron beam inspection gains increasing importance because of the limited resolution of light optical tools, which are not able to handle the shrinking defect sizes.
  • the high-resolution potential of electron beam based imaging tools is in demand for detecting all defects of interest.
  • Current multi-particle-beam systems may include an aperture lens array.
  • the focal length of an aperture lens is inversely proportional to the difference of the electric field component (along the average axis) before and after the aperture.
  • the focal length of the individual apertures can be varied in such a way that the field curvature of the beamlets can be controlled (or corrected).
  • other off-axial aberrations field astigmatism, off-axial coma, and distortion
  • the intermediate beamlet foci are often strongly magnified images of the source. The images of the source are strongly demagnified with the downstream objective lens.
  • a charged particle beam device and a method of imaging a specimen with an array of primary charged particle beamlets is provided that overcome at least some of the problems in the art.
  • a charged particle beam device for inspection of a specimen with an array of primary charged particle beamlets and a method of imaging or illuminating a specimen with an array of primary charged particle beamlets are provided.
  • a charged particle beam device for inspection of a specimen with an array of primary charged particle beamlets.
  • the charged particle beam device includes a charged particle beam source to generate a primary charged particle beam; a multi-aperture plate having at least two openings to generate an array of charged particle beamlets having at least a first beamlet having a first resolution on the specimen and a second beamlet having a second resolution on the specimen; an aberration correction element to correct at least one of spherical aberrations and chromatic aberrations of rotational symmetric charged particle lenses; and an objective lens assembly for focusing each primary charged particle beamlet of the array of primary charged particle beamlets onto a separate location on the specimen.
  • a charged particle beam device for inspection of a specimen with an array of primary charged particle beamlets.
  • the charged particle beam device includes a charged particle beam source to generate a primary charged particle beam; a multi-aperture plate having at least two openings to generate an array of charged particle beamlets having at least a first beamlet having a first resolution on the specimen and a second beamlet having a second resolution on the specimen; an aberration correction element provided between the charged particle beam source and the multi-aperture plate to correct a difference of the first resolution on the specimen as compared to the second resolution on the specimen, comprising at least two multipole elements with 6 or more poles; and an objective lens assembly for focusing each primary charged particle beamlet of the array of primary charged particle beamlets onto a separate location on the specimen.
  • a method of imaging or illuminating a specimen with an array of primary charged particle beamlets includes generating an array of charged particle beamlets having at least a first beamlet and a second beamlet by illuminating a multi-aperture plate with a primary charged particle beam; focusing the array of charged particle beamlets on the specimen with an objective lens assembly; and correcting aberration differences between the first beamlet and the second beamlet with an aberration correction element.
  • FIG. 1 shows a schematic view of a multi-beam device for specimen inspection
  • FIG. 2 shows a schematic view of a multi-beam device for specimen inspection according to embodiments described herein and having an objective lens array;
  • FIG. 3 shows a schematic view of a multi-beam device for specimen inspection according to embodiments described herein and having a lens array and a common objective lens;
  • FIG. 4 shows a schematic view of a multi-beam device for specimen inspection according to embodiments described herein and having a lens array, a deflector array, and a common objective lens;
  • FIG. 5A shows portions of a schematic ray path of a beam in an aberration correction element according to embodiments described herein;
  • FIG. 5B shows a schematic view of a beam in an aberration correction element according to embodiments described herein;
  • FIG. 6 shows a schematic view of a column array of multi-beam device columns according to embodiments described herein.
  • FIG. 7 shows a flow chart of a method for inspecting a specimen with a charged particle beam device according to embodiments described herein.
  • the charged particle beam device or components thereof will exemplarily be referred to as a charged particle beam device including the detection of secondary or backscattered particles, such as electrons.
  • a charged particle beam device including the detection of secondary or backscattered particles, such as electrons.
  • embodiments can still be applied for apparatuses and components detecting corpuscles, such as secondary and/or backscattered charged particles in the form of electrons or ions, photons, X-rays or other signals in order to obtain a specimen image.
  • corpuscles are to be understood as light signals in which the corpuscles are photons as well as particles, in which the corpuscles are ions, atoms, electrons or other particles.
  • a signal (charged particle) beam, or a signal (charged particle) beamlet is referred to as a beam of secondary particles, i.e. secondary and/or backscattered particles.
  • the signal beam or secondary beam is generated by the impingement of the primary beam or primary beamlet on a specimen or by backscattering of the primary beam from the specimen.
  • a primary charged particle beam or a primary charged particle beamlet is generated by a particle beam source and is guided and deflected on a specimen to be inspected or imaged.
  • a “specimen” or “sample” as referred to herein includes, but is not limited to, semiconductor wafers, semiconductor workpieces, photolithographic masks and other workpieces such as memory disks and the like. Embodiments may be applied to any workpiece on which material is deposited or which is structured.
  • a specimen includes a surface to be structured or on which layers are deposited, an edge, and typically a bevel. According to some embodiments, which can be combined with other embodiments described herein, the apparatus and methods are configured for or are applied for electron beam inspection, for critical dimensioning applications and defect review applications.
  • a charged particle beam device 100 is shown schematically in FIG. 1 .
  • the charged particle beam device 100 includes a charged particle beam source 110 including a particle beam emitter 111 , which emits a primary charged particle beam 14 .
  • the charged particle beam source 110 is adapted for generating an array of primary charged particle beamlets 15 .
  • the charged particle beam source 110 may include the charged particle beam emitter 111 , and a multi-aperture plate 113 having at least two openings.
  • the primary charged particle beam 14 may be accelerated by an accelerating voltage supplied to the acceleration electrode 199 .
  • the charged particle beam device may include electrodes 112 - 1 and 112 - 2 .
  • the electrodes 112 of the charged particle beam device can be adapted and driven to generate an electrical field on the surface of the multi-aperture lens plate.
  • the surface of the multi-aperture plate 113 may be a surface of the multi-aperture plate facing the electrode 112 - 2 .
  • the charged particle beam source 110 including the beam emitter, the multi-aperture plate and the electrodes 112 may be denoted as an upper part of the charged particle beam device.
  • the charged particle beam device 100 exemplarily further includes a lens 120 , an objective lens 130 , and a specimen stage 141 , on which a specimen 140 may be placed.
  • the lens 120 , the objective lens 130 , and the specimen stage 141 may be described as being part of the lower part of the charged particle beam device.
  • a demagnification of the emitter tip of the charged particle device is given by the source position and the focal length of the objective lens array.
  • An electric field having a z-component is generated by a voltage difference between the electrode 112 - 2 and the multi-aperture plate 113 .
  • the electrical field may have a z-component extending in the z-direction of the charged particle beam device, i.e. along the optical axis 4 .
  • the component of the electrical field in the z-direction provided by the electrodes 112 may vary over the plane of the surface of the multi-aperture lens plate.
  • A, for example, rotational symmetric, z-component of the electrical field on the surface of the multi-aperture plate can be utilized for a field curvature (or image field curvature) correction by the electrodes.
  • a non-rotationally symmetric configuration of the z-component of the electrical field may be realized by a segmented arrangement of at least one of the electrodes 112 , in order to correct for image field tilt.
  • the varying field of the first electrode on the surface of the multi-aperture plate in the charged particle beam device can be used for correcting the field curvature of the charged particle beam device, in particular the field curvature introduced by the imaging lenses of the charged particle beam device. More than one electrode may be used for compensating or correcting the field curvature.
  • Segmented electrodes may be used to create a non-rotationally symmetric field configuration on the surface of the multi-aperture, which can be used to correct image field tilt that may originate from non-rotationally symmetric optical elements or from a tilted specimen.
  • the charged particle beam device may include electrodes 112 - 1 and 112 - 2 (two electrodes are exemplarily shown).
  • the first electrode may be used to provide the electrical field to create the aperture lenses and the second electrode may be used as the field curvature correction electrode.
  • the charged particle beam device 100 may include a scanning deflector 150 .
  • the scanning deflector 150 can be provided between the lens 120 and the specimen stage 141 . Particularly, the scanning deflector can be surrounded by a pole piece assembly of the objective lens 130 and/or at a position of an electrode of an electrostatic lens.
  • the field on the multi-aperture plate can be varied in such a way that the image field curvature or image field tilt of the beamlets can be controlled (or corrected). Yet, other off-axial aberrations (e.g. field astigmatism, off-axial coma, and distortion) remain.
  • off-axial aberrations e.g. field astigmatism, off-axial coma, and distortion
  • a multi-aperture plate is provided to generate the array of primary charged particle beamlets from a primary charged particle beam.
  • the multi-aperture plate may have two or more openings.
  • the multi-aperture plate can divide a large bundle of the primary charged particle beam into individual beamlets, i.e. the array of primary charged particle beamlets.
  • An aberration correction element is provided, particularly to correct differences in aberrations between different beamlets of the array of primary charged particle beamlets.
  • the aberration correction element can correct either Cs, i.e. spherical aberrations, or both Cc and Cs, i.e. chromatic aberrations and spherical aberrations.
  • FIG. 2 shows a charged particle beam device 200 , e.g. for inspection of the specimen with an array of primary charged particle beamlets.
  • the charged particle beam source 110 includes a particle beam emitter 111 , which emits a primary charged particle beam 14 .
  • a collimator device such as a condenser lens assembly 220 can be provided in the charged particle beam device, for example a multi-particle-beam system.
  • the charged particle beam device may be used for particle beam inspection or particle beam lithography applications.
  • the condenser lens assembly can include one or more round lenses, for example, an electrostatic lens, a magnetostatic lens, or a combined magnetic electrostatic lens acting on the primary charged particle beam emitted by the charged particle beam source 110 .
  • Collimation devices such as the condenser lens assembly 220 may include one or more electrostatic or magnetostatic lenses, which are used to create a parallel (or nearly parallel) particle beam with a beam divergence of less than a few mrad.
  • the second and third order path deviations, i.e. second and third order aberrations, of a round lens system have chromatic and spherical aberrations increasing inter alia with the half angle ⁇ of the central trajectory of an individual beamlet as well as the angle ⁇ of off-axial trajectories within one beamlet. These aberrations may increase linearly or quadratically with the half angle ⁇ and the angle ⁇ . Further, chromatic aberrations may increase with the chromaticity parameter k related to the energy width of the source.
  • Resulting aberrations correspond to radial chromatic distortion and chromatic aberration, radial geometric distortion, radial field astigmatism, field curvature, radial off-axial coma, and spherical aberration. All of those above mentioned aberrations (except for the chromatic and spherical aberration) depend on the beamlet angle ⁇ and hence lead to a non-uniformity from beamlet to beamlet and therefore cause a non-uniform resolution on the specimen.
  • an aberration correction element 210 is provided.
  • the aberration correction element is used to correct the spherical and/or chromatic aberration coefficients, Cs and Cc, of the collimator lens, and optionally in addition of the objective lens.
  • the above referenced second and third order aberrations of the primary charged particle beam may be considered as the cause of the field curvature aberration between the primary charged particle beamlets.
  • the field curvature of a beamlet array may be corrected by controlling the corresponding chromatic and spherical aberrations of the primary charged particle beam, i.e. the assembly of the beamlets.
  • the aberration correction element may generate electro-magnetic quadrupole fields. FIG.
  • FIG. 2 shows a first magnetic quadrupole 212 , the first electromagnetic quadrupole 214 , a second electromagnetic quadrupole 216 , and a second magnetic quadrupole 218 .
  • the resulting corrections are shown by beam paths 14 ′ in a Y-Z-plane and beam paths 14 ′′ in an X-Z-plane.
  • beam trajectories with different energies exit the aberration correction element 210 parallel or essentially parallel to the optical axis, thereby correcting the chromatic aberration.
  • superposed octupole fields may be used to correct for spherical aberrations. Corresponding octupoles are for example shown in FIG. 2 .
  • a first octupole 215 can be superposed with the first electromagnetic quadrupole 214 .
  • a third octupole 219 can be superposed with the first electromagnetic quadrupole 216 .
  • a second octupole 217 can be provided between the first octupole and the third octupole, e.g. in the middle of the two octupoles.
  • the aberration correction element 210 is symmetric, i.e. the quadrupoles and the octupoles are symmetric to a symmetry plane orthogonal to the optical axis.
  • the above described aberration correction element 210 can be modified by having four or more octupoles.
  • four octupoles can be superposed with respective ones of the quadrupoles denoted with reference numerals 212 , 214 , 216 , and 218 .
  • an aberration correction element 210 can include the quadrupoles 212 and 218 may also be electrostatic or combined magnetic electrostatic.
  • an aberration correction element 210 can correct or compensate Cc, Cs, or both Cc and Cs.
  • an aberration correction element 210 may alternatively include a first electric or magnetic hexapole and a second electric or magnetic hexapole.
  • a transfer lens system consisting of at least one lens can be provided to provide a symmetric ray path through the field arrangements. The symmetrical arrangement allows for correcting the spherical aberration while preventing the introduction of second order geometric aberrations, e.g. the threefold astigmatism.
  • the aberration correction element can be a non-rotationally symmetric multipole corrector.
  • a quadrupole-octupole corrector for simultaneous correction of Cs and Cc or a double hexapole corrector for Cs correction can be provided.
  • Embodiments include at least two multipole elements with 6 or more poles, e.g. hexapole elements, octupole elements, or even higher order multipole elements.
  • the aberration correction element is configured to operate at fixed excitation at all times and/or for various operation modes.
  • the aberration correction element can be configured to correct at least one of spherical aberrations and chromatic aberrations of rotationally symmetric charged particle lenses.
  • the aberration correction element is configured to correct the difference between the first resolution on the specimen and the second resolution on the specimen and comprises at least two multipole elements with each consisting of 6 or more poles.
  • the aberration correction element can be selected from the group consisting of: a foil lens, a membrane corrector, wherein the primary electrons trespass a membrane of varying thickness, a space charge lens, a high frequency lens, and a mirror corrector.
  • a charged particle beam device may include a scanning deflector 150 as described with respect to FIG. 1 .
  • the array of primary charged particle beamlets is provided by creating a comparatively large collimated particle beam which is then divided into multiple parallel beamlets by a multi-aperture array 113 as, e.g., shown in FIG. 2 .
  • the primary charged particle beamlets 15 are focused on the specimen 140 by an objective lens assembly 230 .
  • the objective lens assembly can be an objective lens array.
  • the objective lens array can include multiple individual lenses used to focus the beamlets onto the specimen, e.g. onto a separate location on the specimen.
  • the specimen can be supported on a specimen stage 141 .
  • the radial geometric and chromatic distortion may result in a varying resolution on the specimen depending on the off-axial distance of the beamlet.
  • embodiments described herein provide an aberration correction element 210 to correct for a varying resolution of the beamlets.
  • the beamlets may have vanishing Cc and Cs before entering the objective lens assembly. Using such a device is capable of producing beamlets which are (up to the third order) parallel with respect to each other and within themselves.
  • a multi-beam system according to embodiments described herein may, thus, improve the resolution uniformity on the specimen.
  • FIG. 3 shows another embodiment of a charged particle beam device 200 having an array of primary charged particle beamlets.
  • a primary charged particle beam is generated by the charged particle beam source 110 .
  • An aberration correction element 210 is provided, wherein aspects, details, and optional modifications can be used as described with respect to FIG. 2 .
  • a comparably wide primary charged particle beam which can for example be parallel, illuminates the multi-aperture plate 113 .
  • An array of primary charged particle beamlets 15 is generated.
  • a lens array 320 creates individual crossovers 315 .
  • the lens array creating the intermediate crossovers may, e.g., include Einzel lenses or aperture lenses.
  • a common objective lens 130 focuses the beamlets on different or separate locations on the specimen 140 .
  • the objective lens 130 is schematically illustrated.
  • An objective lens 130 can be provided for embodiments described herein as shown in more detail in FIG. 1 .
  • the objective lens may include a coil and upper and lower pole pieces, wherein a magnetic lens component for the array of primary charged particle beamlets is provided. Further, an upper electrode and a lower electrode may provide an electrostatic lens component of the objective lens 130 . A demagnification of the emitter tip of the charged particle device is given by the source position and the focal length of the objective lens array.
  • a possibly existing fifth order spherical aberration coefficient C 5 can be adjusted by an appropriate distance between the condenser lens array and the aberration correction element.
  • the objective lens can be a combined magnetic electrostatic lens.
  • the electrostatic lens component can, according to some embodiments, provide a deceleration lens, wherein the landing energy of the beamlets on the specimen can be reduced as compared to the energy of the beamlets within the column.
  • the landing energy can be between about 100 eV and 8 keV, more typically 2 keV or less, e.g. 1 keV or less, such as 500 eV or even 100 eV.
  • the beam energy of the beamlets within the column can be 5 keV or above, such as 20 keV or above, or even 50 keV or above.
  • the objective lens 130 may be a field compound lens.
  • the objective lens may be a combination of a magnetic lens component and an electrostatic lens component.
  • the objective lens may be a compound magnetic-electrostatic lens.
  • the electrostatic part of the compound magnetic-electrostatic lens is an electrostatic retarding field lens.
  • Using a compound magnetic-electrostatic lens yields superior resolution at low landing energies, such as a few hundred electron volts in the case of a scanning electron microscope (SEM). Low landing energies are beneficial, especially in the modern semiconductor industry, to avoid the charging and/or the damage of radiation sensitive specimens.
  • the charged particle beam device 200 may include a scanning deflector 150 .
  • the scanning deflector 150 can be provided between the lens and the specimen stage 141 .
  • the scanning deflector can be surrounded by a pole piece assembly of the objective lens 130 and/or at a position of an electrode of the electrostatic lens component.
  • the correction element i.e. the Cc-Cs corrector having two or more multipole elements
  • the aberration correction element can focus the primary charged particle beam to reduce a divergence between a first beamlet and a second beamlet, for example to generate parallel beamlets.
  • a condenser lens or a condenser lens assembly collimating the primary charged particle beam before impingement on the multi-aperture plate can be optional for some configurations.
  • the aberration correction element i.e. the Cc-Cs corrector can be operated to not fully correct the aberrations of the lens array and an optionally existing condenser lens assembly.
  • the aberration correction element 210 in combination with the lens array 320 can provide an array of intermediate beamlet crossovers which possess the opposite off-axial aberrations (field curvature, field astigmatism, radial chromatic distortion, etc.) as the common objective lens.
  • the aberration correction element may be operated to not fully correct the aberrations of the condenser lens.
  • the operation may be to create an array of intermediate beamlet crossovers which possess the opposite off-axial aberrations (field curvature, field astigmatism, radial chromatic distortion, etc.) as the common objective lens.
  • the Cc-Cs corrector within the collimator can be used to create defined field curvature, field astigmatism, and radial chromatic distortion, which cancel the inherent off-axial aberrations of the common objective lens.
  • the beamlets pass the objective lens without going through a common crossover.
  • the Cc-Cs corrector within the collimator can be adjusted in such a way that the off-axial coma of the objective lens is corrected. Because of the avoiding of a common crossover, Coulomb or electron-electron interactions, that can lead to a deterioration of the resolution on the specimen, can be reduced.
  • the charged particle beam device 200 may include a scanning deflector 150 .
  • the scanning deflector 150 can be provided within the objective lens or between the lens and the specimen stage 141 . Particularly, the scanning deflector can be surrounded by a pole piece assembly of the objective lens and/or at a position of an electrode of the electrostatic lens component.
  • FIG. 4 shows another embodiment of a charged particle beam device 200 .
  • An additional deflection element 450 having deflectors 454 and, optionally also a further lens 452 close to the intermediate crossover plane may be used to adjust an off-axial coma of the beamlets.
  • the beamlets may be deflected on a “coma-free” path.
  • the deflection element 450 guiding the beamlets through a coma-free point of the objective lens can include the further lens 452 , whereas the deflector array having the deflectors 454 can be optional.
  • the deflection element 450 can include the further lens 452 , the deflector arrays having the deflectors 454 , or both.
  • a deflector array may be arranged within or near the further lens.
  • the deflector array being arranged “in or near” or “within” the further lens may be understood in that the deflector array is placed within the focal length of the further lens.
  • the further lens may include three electrodes and the deflector array may be placed within the three electrodes.
  • the deflector array may approximately be placed at the height of the middle electrode of the three electrodes of the further lens.
  • the further lens may be used for achieving the main effect of directing the primary charged particle beamlets, for instance for directing the primary charged particle beamlets to the coma free point of the objective lens.
  • a deflector array may be used in some embodiments for fine adjustment of the individual primary charged particle beamlets, especially the fine adjustment of the primary charged particle beamlets to be guided into or through the coma free point of the objective lens.
  • the term “coma-free plane” or “coma-free point” refers to a plane or a point of (or provided by) the objective lens at which minimum or even no coma is introduced in the primary charged particle beamlets when the primary charged particle beamlets pass through the coma-free point or coma-free plane.
  • the coma-free point or coma-free plane of the objective lens is a point or plane of the objective lens at which the Fraunhofer condition (the condition that the coma is zero) is satisfied.
  • the coma-free point or coma-free plane of the objective lens is located on a z-axis of the optical system of the charged particle beam device, wherein the z-axis extends along the optical axis 4 (see FIG. 1 ) of the objective lens.
  • the coma-free point or coma-free plane can be positioned within the objective lens.
  • the coma-free point or coma-free plane can be surrounded by the objective lens.
  • the charged particle beam device and the method for inspecting a specimen with an array of primary charged particle beamlets described herein allow for correcting off-axis aberrations for compensating differences in resolution between different beamlets of the array of primary charged particle beamlets.
  • Embodiments described herein thus allow for a system, wherein off-axial aberrations would only or mainly result from 4th or higher order aberrations of, e.g., the condenser-corrector system.
  • Embodiments of charged particle beam devices 200 may include the further optional modification to yield yet further embodiments.
  • a charged particle beam emitter 111 of the charged particle beam source 110 may be a cold field emitter (CFE), a Schottky emitter, a TFE or another high current high brightness charged particle beam source (such as an electron beam source).
  • a high current is considered to be 5 ⁇ A in 100 mrad or above, for example up to 5 mA, e.g. 30 ⁇ A in 100 mrad to 1 mA in 100 mrad, such as about 300 ⁇ A in 100 mrad.
  • the current is distributed essentially uniform, e.g. with a deviation of + ⁇ 10%, particularly in the case of a linear or rectangular array.
  • a TFE or another high reduced-brightness source e.g. an electron-beam source, capable of providing a large beam current is a source where the brightness does not fall by more than 20% of the maximum value when the emission angle is increased to provide a maximum of 10 ⁇ A-100 ⁇ A, for example 30 ⁇ A.
  • the objective lens array may include individual electrostatic lenses (in particular retarding field lenses).
  • an objective lens array may be used in embodiments described herein including individual magnetic lens pieces, in particular having a common excitation coil.
  • an objective lens array used for a charged particle beam device may include a combination of individual electrostatic lenses and individual magnetic lenses.
  • a common objective lens can be used as described with respect to FIGS. 3 and 4 .
  • the primary charged particle beam 14 can pass through the multi-aperture plate 113 after having left the charged particle beam emitter 111 , i.e. the emitter tip.
  • the primary charged particle beam 14 passes through the multi-aperture plate 113 having multiple aperture openings.
  • the aperture openings can be situated in any array configuration on the multi-aperture plate 113 such as a line, rectangle, a square, a ring, or any suitable one-dimensional or two-dimensional array.
  • the charged particle beam device as described herein allows for arraying the aperture openings of the multi-aperture plate in any configuration without having drawbacks due to field curvature or aberrations.
  • the arrangement of the beamlet array may be done in any arrangement, e.g. an arrangement suitable for fast inspection, an arrangement adapted to the specimen structure to be inspected, an arrangement allowing a large number of beams, an arrangement adapted to the beam intensity and the like.
  • the beamlet array may be arranged in a line, a rectangle, a hexagon, or a square.
  • the array of primary charged particle beamlets may be arranged in a one dimensional (line) arrays or 2-dimensional arrays (e.g. 4 ⁇ 4, 3 ⁇ 3, 5 ⁇ 5) or asymmetrical arrays e.g. 2 ⁇ 5.
  • Embodiments described herein are not limited to the examples of arrays and may include any suitable array configuration of primary charged particle beamlets.
  • a lens 120 may be arranged.
  • the aberration correction element may be an electrostatic corrector, i.e. electrostatic multipoles are included in the aberration correction element.
  • the electrostatic corrector can be, for example, purely electrostatic, i.e. not including magnetic multipoles. This may be beneficial for arraying multiple columns as described with respect to FIG. 6 below.
  • the aberration correction element can include electrostatic lens fields and electrostatic quadrupole fields for chromatic aberration correction. Additionally, electrostatic octupole fields may be superposed for spherical aberration correction. The electrostatic lens fields can be superposed with the quadrupole fields.
  • An electrostatic corrector may be beneficial for allowing reduced space when having an array of two or more columns, wherein each column may provide a multi-beam charged particle device. Further benefits may be that hysteresis is avoided and the field precision is mainly limited by machining tolerances. This is for example described in “Electrostatic correction of the chromatic and of the spherical aberration of charged ⁇ particle lenses” by Christophingbburger, Harald Rose in J Electron Microsc (Tokyo) ( 2001 ) 50 (5): 383-390.
  • a combined magnetic electrostatic aberration correction element can benefit from decoupling focusing properties and Cc correction, moderate higher order aberrations, moderate sensitivity to alignment errors, and damping of noise in the magnetic circuits to the low kHz range.
  • the corrector includes a plurality of electrostatic multipoles and lenses, which are, for example, beneficially symmetrically arranged. That is there is a symmetry plane of the aberration correction element, which is orthogonal to the optical axis.
  • elements 512 can be electrostatic quadrupoles
  • elements 514 can be a combination of electrostatic lenses superposed with electrostatic quadrupoles.
  • Elements 512 and 514 can correct Cc.
  • the elements 513 and 515 can be electrostatic octupoles for correction of Cs.
  • An aberration correction element 210 can include elements to correct Cc, Cs, or both Cc and Cs.
  • the charged particle beam device allows for providing an array of primary charged particle beamlets.
  • the array of primary charged particle beamlets may typically include three or more primary charged particle beamlets per column, more typically ten or more primary charged particle beamlets.
  • the charged particle beam device and the method for inspecting a sample with a charged particle beam device according to embodiments described herein may provide an array of primary charged particle beamlets within one column of a charged particle beam device having a small distance to each other at the sample surface. For instance, the distance between two primary charged particle beamlets within one column may typically be less than 150 ⁇ m, more typically less than 100 ⁇ m, or even less than 50 ⁇ m.
  • the charged particle beam device allows to be arrayed in a multi-column microscope (MCM). Multiple columns each having an array of primary charged particle beamlets for inspecting a specimen increases the process speed and throughput.
  • MCM multi-column microscope
  • FIG. 6 shows a multi-column microscope configuration 600 .
  • the multi-column microscope configuration 600 is exemplarily shown with three charged particle beam devices 200 .
  • the number of charged particle beam devices may deviate from the shown example in multi-column microscope configuration according to embodiments described herein.
  • a multi-column microscope configuration according to embodiments described herein may have two or more charged particle beam devices, such as two, three, four, five, or even more than five charged particle beam devices.
  • the charged particle beam devices can be arranged in a 1-dimensional or a 2-dimensional array.
  • Each of the charged particle beam devices of the multi-column microscope configuration may be a charged particle beam device having an array of primary charged particle beamlets as described in any of the embodiments described herein.
  • the multi-column microscope includes charged particle beam devices as shown and described in FIG. 2 .
  • the multi-column microscope configuration 600 includes a specimen stage 141 on which a specimen 140 to be inspected is placed.
  • the charged particle beam devices of the multi-column microscope configuration 600 may inspect one specimen.
  • more than one specimen 140 may be placed on the specimen stage 141 .
  • each charged particle beam device 200 includes a condenser lens assembly having, for example, one or more condenser lenses, an aberration correction element 210 , the multi-aperture plate 113 , and a lens array, e.g. objective lens assembly 230 .
  • the charged particle beam devices 200 of the multi-column microscope configuration 600 may have a common objective lens assembly.
  • control electrode e.g. a proxi-electrode, for extracting the signal particles, such as secondary electrons (SE) or backscattered electrons, may be provided for charged particle beam devices of embodiments described herein and/or multi-column microscope configurations 600 .
  • the control electrode can be a common electrode for more than one column or can be a control electrode for one column.
  • the very low landing energy e.g. 100 eV and a low extraction field, can be provided without deteriorating the overall performance of the charged particle beam imaging system.
  • the charged particle beam devices 200 of the multi-column microscope configuration may have a distance to each other of typically between about 10 mm to about 60 mm, more typically between about 10 mm and about 50 mm. In some embodiments, the distance between the single charged particle beam devices of the multi-column microscope configuration may be measured as the distance between the corresponding optical axes of the charged particle beam devices.
  • a sufficient number of primary charged particle beamlets can be provided at a sufficient resolution and with a sufficiently small crosstalk between signal beamlets.
  • FIG. 7 shows a flowchart of a method 700 of imaging a specimen with an array of primary charged particle beamlets.
  • an array of charged particle beamlets is generated by illuminating a multi-aperture plate with the primary charged particle beam.
  • the area of charged particle beamlets may have at least a first beamlet and a second beamlet.
  • the primary charged particle beam can be generated with a charged particle beam source including a beam emitter.
  • the beam emitter may for instance be a CFE, a Schottky emitter, a TFE or another high current—high brightness charged particle beam source (such as an electron beam source), as e.g. mentioned above.
  • the beam emitter may emit one primary charged particle beam, which may be processed (e.g.
  • the aperture openings in the multi-aperture plate may be arranged into a 1-dimensional beamlet array, or a 2-dimensional beamlet array, such as—for instance—a hexagonal, a rectangular or quadratic beamlet array.
  • the array of charged particle beamlets is focused on a specimen, for example with an objective lens assembly.
  • the objective lens assembly may be an objective lens array or a common objective lens assembly.
  • an objective lens array may include two or more electrostatic lenses and/or two or more magnetic lenses.
  • a common objective lens assembly may include a magnetic lens component and an electrostatic lens component, particularly an electrostatic lens component operating in a deceleration mode.
  • aberration differences within the array of primary charged particle beamlets can be corrected with an aberration correction element.
  • the aberration correction element can correct either Cs, i.e. spherical aberrations, or both Cc and Cs, i.e. chromatic aberrations and spherical aberrations.
  • the aberration correction element can be a non-rotationally symmetric multipole corrector.
  • a quadrupole-octupole corrector for simultaneous correction of Cs and Cc or a double hexapole corrector for Cs correction can be provided.
  • the aberration correction element may act on the primary charged particle beam or may act on the primary charged particle beamlets. Yet further, additionally or alternatively, for a common objective lens assembly, the aberration correction element may correct off-axial aberrations of the objective lens assembly.
  • the beamlets may enter the lenses of the objective lens array along the optical axis. Accordingly, correction of the condenser lens assembly (and optionally further lenses) may be provided by the aberration correction element.
  • the aberration correction element may act as a collimator lens, wherein a condenser lens assembly may be omitted.
  • the charged particle beam device may include further beam optical elements, such as condenser lenses, (scanning) deflectors, beam benders, correctors, or the like.
  • a condenser lens may be placed before the multi-aperture plate (i.e. upstream of the primary charged particle beam when seen in a direction of the propagating primary charged particle beam).
  • the charged particle beam device according to embodiments described herein may include a beam blanker, such as an individual beam blanker for each beamlet or a common beam blanker.
  • a condenser lens assembly may include one or more condenser lenses.
  • Each of the condenser lenses can be electrostatic, magnetic or combined magnetic electrostatic.
  • the multi-aperture plate i.e. an array of aperture openings may be replaced with a different multi-aperture plate, for example for changing the diameters of the aperture openings. This enables for switching between different beamlet currents.
  • the condenser lens assembly can include two or more condenser lenses for adjusting the focal length. Adjusting the focal length can be advantageous for adjusting the total magnification of the source.
  • the charged particle beam device as described herein may be used for particle beam inspection or particle beam lithography applications. Further, the methods of imaging a specimen with an array of primary charged particle beamlets can similarly apply to a method of illuminating a specimen with an array of primary charged particle beamlets, for example for particle beamlet lithography applications.

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US15/642,147 US10176965B1 (en) 2017-07-05 2017-07-05 Aberration-corrected multibeam source, charged particle beam device and method of imaging or illuminating a specimen with an array of primary charged particle beamlets
TW109116343A TWI751556B (zh) 2017-07-05 2018-07-03 用於以初級帶電粒子小束陣列檢查樣本的帶電粒子束裝置
TW107122870A TWI691997B (zh) 2017-07-05 2018-07-03 用於以初級帶電粒子小束陣列檢查樣本的帶電粒子束裝置及以帶電粒子小束陣列成像或照射樣本的方法
CN202010960020.9A CN112233960A (zh) 2017-07-05 2018-07-04 带电粒子束装置
CN201810724460.7A CN109216143B (zh) 2017-07-05 2018-07-04 带电粒子束装置和对样本进行成像或照明的方法件
NL2021253A NL2021253B1 (en) 2017-07-05 2018-07-05 Charged particle beam device for inspection of a specimen with an array of primary charged particle beamlets and method of imaging or illuminating a specimen with an array of primary charged particle beamlets
KR1020180078184A KR102109963B1 (ko) 2017-07-05 2018-07-05 1차 하전 입자 빔렛들의 어레이를 이용한 시료의 검사를 위한 하전 입자 빔 디바이스 및 1차 하전 입자 빔렛들의 어레이를 이용하여 시료를 이미징하거나 조명하는 방법
US16/210,554 US10784072B2 (en) 2017-07-05 2018-12-05 Aberration-corrected multibeam source, charged particle beam device and method of imaging or illuminating a specimen with an array of primary charged particle beamlets
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US20200027689A1 (en) 2020-01-23
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TWI751556B (zh) 2022-01-01
CN109216143A (zh) 2019-01-15
KR20200051560A (ko) 2020-05-13
KR102214294B1 (ko) 2021-02-09
US20190013176A1 (en) 2019-01-10
CN109216143B (zh) 2020-10-13
KR20190005134A (ko) 2019-01-15
TW202046366A (zh) 2020-12-16
TW201917767A (zh) 2019-05-01
US10784072B2 (en) 2020-09-22
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TWI691997B (zh) 2020-04-21
KR102109963B1 (ko) 2020-05-12

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