UA99570C2 - Крепежный конус для кремниевых осаждаемых стержней - Google Patents

Крепежный конус для кремниевых осаждаемых стержней

Info

Publication number
UA99570C2
UA99570C2 UAA201112202A UAA201112202A UA99570C2 UA 99570 C2 UA99570 C2 UA 99570C2 UA A201112202 A UAA201112202 A UA A201112202A UA A201112202 A UAA201112202 A UA A201112202A UA 99570 C2 UA99570 C2 UA 99570C2
Authority
UA
Ukraine
Prior art keywords
silicon growth
holding cone
rods
base body
growth rods
Prior art date
Application number
UAA201112202A
Other languages
English (en)
Russian (ru)
Ukrainian (uk)
Inventor
Торстен Корнмайер
Original Assignee
КаГеТе ГРАФИТ ТЕХНОЛОГИ ГМБХ
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by КаГеТе ГРАФИТ ТЕХНОЛОГИ ГМБХ filed Critical КаГеТе ГРАФИТ ТЕХНОЛОГИ ГМБХ
Publication of UA99570C2 publication Critical patent/UA99570C2/ru

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4418—Methods for making free-standing articles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
UAA201112202A 2009-05-18 2010-03-17 Крепежный конус для кремниевых осаждаемых стержней UA99570C2 (ru)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE200910021825 DE102009021825B3 (de) 2009-05-18 2009-05-18 Aufnahmekegel für Silizium-Anzuchtstäbe

Publications (1)

Publication Number Publication Date
UA99570C2 true UA99570C2 (ru) 2012-08-27

Family

ID=42199505

Family Applications (1)

Application Number Title Priority Date Filing Date
UAA201112202A UA99570C2 (ru) 2009-05-18 2010-03-17 Крепежный конус для кремниевых осаждаемых стержней

Country Status (5)

Country Link
CN (1) CN102428028B (de)
DE (1) DE102009021825B3 (de)
TW (1) TWI450860B (de)
UA (1) UA99570C2 (de)
WO (1) WO2010133386A1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010003068A1 (de) * 2010-03-19 2011-09-22 Wacker Chemie Ag Verfahren zur Herstellung von rissfreien polykristallinen Siliciumstäben
DE102010003069A1 (de) 2010-03-19 2011-09-22 Wacker Chemie Ag Kegelförmige Graphitelektrode mit hochgezogenem Rand
US10494714B2 (en) * 2011-01-03 2019-12-03 Oci Company Ltd. Chuck for chemical vapor deposition systems and related methods therefor
JP5507493B2 (ja) * 2011-05-09 2014-05-28 信越化学工業株式会社 シリコン芯線ホルダおよび多結晶シリコンの製造方法
JP5666983B2 (ja) 2011-05-09 2015-02-12 信越化学工業株式会社 シリコン芯線ホルダおよび多結晶シリコンの製造方法
DE102011084372A1 (de) 2011-10-12 2012-02-09 Wacker Chemie Ag Vorrichtung für die Abscheidung von polykristallinem Silicium auf Dünnstäben
DE202013104065U1 (de) 2013-09-06 2013-09-30 Pryvatne Aktsionerne Tovarystvo "Zavod Napivprovidnykiv" Halter zum Fixieren von Keimstäben in einem Wachstumsreaktor für polykristallines Silizium
KR101590607B1 (ko) * 2013-11-20 2016-02-01 한화케미칼 주식회사 폴리실리콘 제조 장치
JP6373724B2 (ja) * 2014-11-04 2018-08-15 株式会社トクヤマ 芯線ホルダ及びシリコンの製造方法
JP7100192B2 (ja) * 2018-07-27 2022-07-12 ワッカー ケミー アクチエンゲゼルシャフト 多結晶シリコン堆積用電極

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1061593B (de) * 1956-06-25 1959-07-16 Siemens Ag Vorrichtung zur Gewinnung reinsten Halbleitermaterials fuer elektrotechnische Zwecke
DE1155759B (de) * 1959-06-11 1963-10-17 Siemens Ag Vorrichtung zur Gewinnung reinsten kristallinen Halbleitermaterials fuer elektrotechnische Zwecke
DE1205950B (de) * 1961-06-16 1965-12-02 Siemens Ag Halterung in einer Vorrichtung zur Abscheidung von Halbleitermaterial aus der Gasphase auf stabfoermigen Traegern aus Halbleitermaterial gleicher Gitterstruktur und Verfahren zu ihrer Herstellung
DE2328303C3 (de) * 1973-06-04 1979-11-15 Siemens Ag, 1000 Berlin Und 8000 Muenchen Vorrichtung zum Herstellen von Siliciumstäben
IT1246772B (it) * 1989-12-26 1994-11-26 Advanced Silicon Materials Inc ''mandrino di grafite avente uno strato esterno di rivestimento __impermeabile all'idrogeno''
CN1364203A (zh) * 2000-02-18 2002-08-14 G.T.装备技术公司 多晶硅化学气相沉积方法和装置
EP2108619B1 (de) * 2008-03-21 2011-06-22 Mitsubishi Materials Corporation Polykristalliner Siliciumreaktor

Also Published As

Publication number Publication date
CN102428028B (zh) 2014-04-23
TWI450860B (zh) 2014-09-01
DE102009021825B3 (de) 2010-08-05
WO2010133386A1 (de) 2010-11-25
TW201041803A (en) 2010-12-01
CN102428028A (zh) 2012-04-25

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