Институт электросварки им. Е.О. Патона национальной академии наук Украины
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Priority to UAU201000454UpriorityCriticalpatent/UA51927U/en
Publication of UA51927UpublicationCriticalpatent/UA51927U/en
A device for growth of refractory monocrystals by Chokhralskyi’s method comprises the vacuum chamber of crystallization, mechanism of crystal withdrawal and crucible is made of refractory material (metal, alloy, chemistry compound etc.). The crucible is made of refractory material by means of level-by-level fusing, which is heated with gating through it of electric current.
UAU201000454U2010-01-182010-01-18Device for growth of refractory monocrystals by chohralskyis method
UA51927U
(en)