MD4266B1 - Method for producing the ZnSe single crystal - Google Patents
Method for producing the ZnSe single crystalInfo
- Publication number
- MD4266B1 MD4266B1 MDA20110026A MD20110026A MD4266B1 MD 4266 B1 MD4266 B1 MD 4266B1 MD A20110026 A MDA20110026 A MD A20110026A MD 20110026 A MD20110026 A MD 20110026A MD 4266 B1 MD4266 B1 MD 4266B1
- Authority
- MD
- Moldova
- Prior art keywords
- single crystal
- producing
- znse single
- temperature
- znse
- Prior art date
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention relates to methods for producing semiconductor materials and can be used in semiconductor technology.The method for producing the ZnSe single crystal consists in the growth of ZnSe single crystal from the gas phase at a temperature of 900…1100°C, with a temperature gradient in the crystallization zone of 1…5°C/cm and with an embryo heating and grown crystal cooling speed of 20…60°C/hour, at the same time it is preset a non-uniform distribution of the furnace temperature.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
MDA20110026A MD4266C1 (en) | 2011-03-17 | 2011-03-17 | Method for producing the ZnSe single crystal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
MDA20110026A MD4266C1 (en) | 2011-03-17 | 2011-03-17 | Method for producing the ZnSe single crystal |
Publications (3)
Publication Number | Publication Date |
---|---|
MD20110026A2 MD20110026A2 (en) | 2012-09-30 |
MD4266B1 true MD4266B1 (en) | 2013-12-31 |
MD4266C1 MD4266C1 (en) | 2014-07-31 |
Family
ID=47018644
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MDA20110026A MD4266C1 (en) | 2011-03-17 | 2011-03-17 | Method for producing the ZnSe single crystal |
Country Status (1)
Country | Link |
---|---|
MD (1) | MD4266C1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
MD4500C1 (en) * | 2015-07-23 | 2018-02-28 | Государственный Университет Молд0 | Process for gaseous-phase production of ZnO single crystals |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6011293A (en) * | 1983-06-29 | 1985-01-21 | Sumitomo Electric Ind Ltd | Manufacture of znse single crystal |
JPH0617280B2 (en) * | 1987-03-18 | 1994-03-09 | 社団法人生産技術振興協会 | ZnSe single crystal production method |
JP2585629B2 (en) * | 1987-09-30 | 1997-02-26 | 住友電気工業株式会社 | ZnSe single crystal preparation method |
US4978577A (en) * | 1989-04-12 | 1990-12-18 | Cvd Incorporated | Method for preparing laminates of ZnSe and ZnS |
JP3410299B2 (en) * | 1996-08-08 | 2003-05-26 | 科学技術振興事業団 | Method for producing highly doped ZnSe crystal |
JP3439302B2 (en) * | 1996-08-12 | 2003-08-25 | 住友電気工業株式会社 | Heat treatment method for ZnSe crystal |
JP2001332506A (en) * | 2000-05-19 | 2001-11-30 | Sumitomo Electric Ind Ltd | Method of thermally treating znse crystal substrate, thermally treated substrate, and light emitting device |
-
2011
- 2011-03-17 MD MDA20110026A patent/MD4266C1/en not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
MD4500C1 (en) * | 2015-07-23 | 2018-02-28 | Государственный Университет Молд0 | Process for gaseous-phase production of ZnO single crystals |
Also Published As
Publication number | Publication date |
---|---|
MD4266C1 (en) | 2014-07-31 |
MD20110026A2 (en) | 2012-09-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FG4A | Patent for invention issued | ||
KA4A | Patent for invention lapsed due to non-payment of fees (with right of restoration) | ||
MM4A | Patent for invention definitely lapsed due to non-payment of fees |