MD4266B1 - Method for producing the ZnSe single crystal - Google Patents

Method for producing the ZnSe single crystal

Info

Publication number
MD4266B1
MD4266B1 MDA20110026A MD20110026A MD4266B1 MD 4266 B1 MD4266 B1 MD 4266B1 MD A20110026 A MDA20110026 A MD A20110026A MD 20110026 A MD20110026 A MD 20110026A MD 4266 B1 MD4266 B1 MD 4266B1
Authority
MD
Moldova
Prior art keywords
single crystal
producing
znse single
temperature
znse
Prior art date
Application number
MDA20110026A
Other languages
Moldavian (mo)
Romanian (ro)
Other versions
MD4266C1 (en
MD20110026A2 (en
Inventor
Gleb Colibaba
Dumitru Nedeoglo
Original Assignee
Univ De Stat Din Moldova
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ De Stat Din Moldova filed Critical Univ De Stat Din Moldova
Priority to MDA20110026A priority Critical patent/MD4266C1/en
Publication of MD20110026A2 publication Critical patent/MD20110026A2/en
Publication of MD4266B1 publication Critical patent/MD4266B1/en
Publication of MD4266C1 publication Critical patent/MD4266C1/en

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The invention relates to methods for producing semiconductor materials and can be used in semiconductor technology.The method for producing the ZnSe single crystal consists in the growth of ZnSe single crystal from the gas phase at a temperature of 900…1100°C, with a temperature gradient in the crystallization zone of 1…5°C/cm and with an embryo heating and grown crystal cooling speed of 20…60°C/hour, at the same time it is preset a non-uniform distribution of the furnace temperature.
MDA20110026A 2011-03-17 2011-03-17 Method for producing the ZnSe single crystal MD4266C1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MDA20110026A MD4266C1 (en) 2011-03-17 2011-03-17 Method for producing the ZnSe single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MDA20110026A MD4266C1 (en) 2011-03-17 2011-03-17 Method for producing the ZnSe single crystal

Publications (3)

Publication Number Publication Date
MD20110026A2 MD20110026A2 (en) 2012-09-30
MD4266B1 true MD4266B1 (en) 2013-12-31
MD4266C1 MD4266C1 (en) 2014-07-31

Family

ID=47018644

Family Applications (1)

Application Number Title Priority Date Filing Date
MDA20110026A MD4266C1 (en) 2011-03-17 2011-03-17 Method for producing the ZnSe single crystal

Country Status (1)

Country Link
MD (1) MD4266C1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD4500C1 (en) * 2015-07-23 2018-02-28 Государственный Университет Молд0 Process for gaseous-phase production of ZnO single crystals

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6011293A (en) * 1983-06-29 1985-01-21 Sumitomo Electric Ind Ltd Manufacture of znse single crystal
JPH0617280B2 (en) * 1987-03-18 1994-03-09 社団法人生産技術振興協会 ZnSe single crystal production method
JP2585629B2 (en) * 1987-09-30 1997-02-26 住友電気工業株式会社 ZnSe single crystal preparation method
US4978577A (en) * 1989-04-12 1990-12-18 Cvd Incorporated Method for preparing laminates of ZnSe and ZnS
JP3410299B2 (en) * 1996-08-08 2003-05-26 科学技術振興事業団 Method for producing highly doped ZnSe crystal
JP3439302B2 (en) * 1996-08-12 2003-08-25 住友電気工業株式会社 Heat treatment method for ZnSe crystal
JP2001332506A (en) * 2000-05-19 2001-11-30 Sumitomo Electric Ind Ltd Method of thermally treating znse crystal substrate, thermally treated substrate, and light emitting device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD4500C1 (en) * 2015-07-23 2018-02-28 Государственный Университет Молд0 Process for gaseous-phase production of ZnO single crystals

Also Published As

Publication number Publication date
MD4266C1 (en) 2014-07-31
MD20110026A2 (en) 2012-09-30

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Legal Events

Date Code Title Description
FG4A Patent for invention issued
KA4A Patent for invention lapsed due to non-payment of fees (with right of restoration)
MM4A Patent for invention definitely lapsed due to non-payment of fees