MD532Y - Method for rapid growth of monocrystals Sb - Google Patents

Method for rapid growth of monocrystals Sb

Info

Publication number
MD532Y
MD532Y MDS20110127A MDS20110127A MD532Y MD 532 Y MD532 Y MD 532Y MD S20110127 A MDS20110127 A MD S20110127A MD S20110127 A MDS20110127 A MD S20110127A MD 532 Y MD532 Y MD 532Y
Authority
MD
Moldova
Prior art keywords
growth
monocrystals
rapid growth
angle
axis
Prior art date
Application number
MDS20110127A
Other languages
Moldavian (mo)
Romanian (ro)
Inventor
Albina Nikolaeva
Pavel Bodyul
Leonid Konopko
Gheorghe Para
Pavel Bodiul
Original Assignee
Inst De Ing Electronica Si Nanotehnologii D Ghitu Al Asm
Inst De Ing Electronic & Abreve & Scedil I Nanotehnologii D Ghi & Tcedil U Al A & Scedil M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Inst De Ing Electronica Si Nanotehnologii D Ghitu Al Asm, Inst De Ing Electronic & Abreve & Scedil I Nanotehnologii D Ghi & Tcedil U Al A & Scedil M filed Critical Inst De Ing Electronica Si Nanotehnologii D Ghitu Al Asm
Priority to MDS20110127A priority Critical patent/MD532Z/en
Publication of MD532Y publication Critical patent/MD532Y/en
Publication of MD532Z publication Critical patent/MD532Z/en

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The invention relates to the production of single crystals, namely to a method for rapid growth of monocrystals Sb.The method, according to the invention, consists in that it is carried out growth of monocrystal from molten metal (4) in a quartz ampoule (2), the bottom of which is made cone-shaped with an angle of 40°, placed in an oven (1), connected to an electronic device to keep therein the constant temperature of 300°C during the entire growth process with a temperature gradient equal to 7°C/cm. The first core of crystallization of Sb, which serves as a starting point for oriented growth, is situated so that the third-order axis may form with the ampoule axis an angle of 20°.
MDS20110127A 2011-07-05 2011-07-05 Method for rapid growth of monocrystals Sb MD532Z (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MDS20110127A MD532Z (en) 2011-07-05 2011-07-05 Method for rapid growth of monocrystals Sb

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MDS20110127A MD532Z (en) 2011-07-05 2011-07-05 Method for rapid growth of monocrystals Sb

Publications (2)

Publication Number Publication Date
MD532Y true MD532Y (en) 2012-07-31
MD532Z MD532Z (en) 2013-02-28

Family

ID=46582447

Family Applications (1)

Application Number Title Priority Date Filing Date
MDS20110127A MD532Z (en) 2011-07-05 2011-07-05 Method for rapid growth of monocrystals Sb

Country Status (1)

Country Link
MD (1) MD532Z (en)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD980179A (en) * 1998-08-10 2000-06-30 Institutul De Informare Si Implementare Process and device for rapid growth of bismuth monocrystals
MD402Z (en) * 2010-09-17 2012-02-29 ИНСТИТУТ ЭЛЕКТРОННОЙ ИНЖЕНЕРИИ И НАНОТЕХНОЛОГИЙ "D. Ghitu" АНМ Process for rapid growth of bismuth monocrystal
  • 2011

Also Published As

Publication number Publication date
MD532Z (en) 2013-02-28

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Legal Events

Date Code Title Description
FG9Y Short term patent issued
KA4Y Short-term patent lapsed due to non-payment of fees (with right of restoration)