Inst De Ing Electronica Si Nanotehnologii D Ghitu Al Asm
Inst De Ing Electronic & Abreve & Scedil I Nanotehnologii D Ghi & Tcedil U Al A & Scedil M
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Priority to MDS20110127ApriorityCriticalpatent/MD532Z/en
Publication of MD532YpublicationCriticalpatent/MD532Y/en
Publication of MD532ZpublicationCriticalpatent/MD532Z/en
The invention relates to the production of single crystals, namely to a method for rapid growth of monocrystals Sb.The method, according to the invention, consists in that it is carried out growth of monocrystal from molten metal (4) in a quartz ampoule (2), the bottom of which is made cone-shaped with an angle of 40°, placed in an oven (1), connected to an electronic device to keep therein the constant temperature of 300°C during the entire growth process with a temperature gradient equal to 7°C/cm. The first core of crystallization of Sb, which serves as a starting point for oriented growth, is situated so that the third-order axis may form with the ampoule axis an angle of 20°.
MDS20110127A2011-07-052011-07-05Method for rapid growth of monocrystals Sb
MD532Z
(en)