SG11201401945WA - Crucible for the production of crystalline semiconductor ingots and process for manufacturing the same - Google Patents

Crucible for the production of crystalline semiconductor ingots and process for manufacturing the same

Info

Publication number
SG11201401945WA
SG11201401945WA SG11201401945WA SG11201401945WA SG11201401945WA SG 11201401945W A SG11201401945W A SG 11201401945WA SG 11201401945W A SG11201401945W A SG 11201401945WA SG 11201401945W A SG11201401945W A SG 11201401945WA SG 11201401945W A SG11201401945W A SG 11201401945WA
Authority
SG
Singapore
Prior art keywords
crucible
manufacturing
production
same
crystalline semiconductor
Prior art date
Application number
SG11201401945WA
Inventor
Gilbert Rancoule
Christian Martin
Laurent Dubois
Original Assignee
Vesuvius France Sa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Vesuvius France Sa filed Critical Vesuvius France Sa
Publication of SG11201401945WA publication Critical patent/SG11201401945WA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B28/00—Production of homogeneous polycrystalline material with defined structure
    • C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
    • C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002—Crucibles or containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
SG11201401945WA 2011-12-12 2012-12-11 Crucible for the production of crystalline semiconductor ingots and process for manufacturing the same SG11201401945WA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP11193086.3A EP2604728A1 (en) 2011-12-12 2011-12-12 Crucible for the production of crystalline semiconductor ingots and process for manufacturing the same
PCT/EP2012/075021 WO2013087598A1 (en) 2011-12-12 2012-12-11 Crucible for the production of crystalline semiconductor ingots and process for manufacturing the same

Publications (1)

Publication Number Publication Date
SG11201401945WA true SG11201401945WA (en) 2014-09-26

Family

ID=47326175

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201401945WA SG11201401945WA (en) 2011-12-12 2012-12-11 Crucible for the production of crystalline semiconductor ingots and process for manufacturing the same

Country Status (8)

Country Link
EP (2) EP2604728A1 (en)
KR (1) KR20140101822A (en)
CN (1) CN103987881A (en)
ES (1) ES2596255T3 (en)
SG (1) SG11201401945WA (en)
TW (1) TWI555887B (en)
UA (1) UA111753C2 (en)
WO (1) WO2013087598A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102035297B1 (en) * 2017-10-20 2019-10-22 한국생산기술연구원 Angular structure with improved fracture toughness and manufacturing method and pressure tank
CN109858145B (en) * 2019-01-30 2023-08-04 金川集团股份有限公司 System for processing intersecting line of circular tube

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2175594B1 (en) 1972-03-15 1974-09-13 Radiotechnique Compelec
JPH0428512A (en) * 1990-05-24 1992-01-31 Toray Ind Inc Manufacture of cuppy fiber-reinforced composite body
US6423136B1 (en) * 2000-03-20 2002-07-23 Carl Francis Swinehart Crucible for growing macrocrystals
US7867334B2 (en) 2004-03-29 2011-01-11 Kyocera Corporation Silicon casting apparatus and method of producing silicon ingot
US7344596B2 (en) 2005-08-25 2008-03-18 Crystal Systems, Inc. System and method for crystal growing
US20100089308A1 (en) * 2008-10-15 2010-04-15 Japan Super Quartz Corporation Silica glass crucible and method for pulling single-crystal silicon
JP2008088045A (en) 2006-09-05 2008-04-17 Sumco Corp Manufacture process of silicon single crystal and manufacture process of silicon wafer
FR2908125B1 (en) 2006-11-02 2009-11-20 Commissariat Energie Atomique PROCESS FOR PURIFYING METALLURGICAL SILICON BY DIRECTED SOLIDIFICATION
TW200846509A (en) * 2007-01-19 2008-12-01 Vesuvius Crucible Co Crucible and filling method for melting a non-ferrous product
WO2010005705A1 (en) 2008-06-16 2010-01-14 Gt Solar Incorporated Systems and methods for growing monocrystalline silicon ingots by directional solidification
CN201506711U (en) * 2009-09-30 2010-06-16 常州天合光能有限公司 Crucible for casting ingot
JP5293615B2 (en) 2010-01-08 2013-09-18 信越半導体株式会社 Single crystal production equipment
JP5480036B2 (en) 2010-03-03 2014-04-23 グローバルウェーハズ・ジャパン株式会社 Method for producing silicon single crystal
CN201678762U (en) * 2010-03-05 2010-12-22 上海杰姆斯电子材料有限公司 Graphite crucible for preparing monocrystalline silicon with Czochralski method

Also Published As

Publication number Publication date
EP2604728A1 (en) 2013-06-19
ES2596255T3 (en) 2017-01-05
CN103987881A (en) 2014-08-13
TW201335447A (en) 2013-09-01
UA111753C2 (en) 2016-06-10
TWI555887B (en) 2016-11-01
KR20140101822A (en) 2014-08-20
EP2791398A1 (en) 2014-10-22
WO2013087598A1 (en) 2013-06-20
EP2791398B1 (en) 2016-07-13

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