UA116899U - METHOD OF OBTAINING AgxGaxGe1-xSe2 Single Crystals (X = 0.333; 0.250; 0.200; 0.167) - Google Patents

METHOD OF OBTAINING AgxGaxGe1-xSe2 Single Crystals (X = 0.333; 0.250; 0.200; 0.167)

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Publication number
UA116899U
UA116899U UAU201612729U UAU201612729U UA116899U UA 116899 U UA116899 U UA 116899U UA U201612729 U UAU201612729 U UA U201612729U UA U201612729 U UAU201612729 U UA U201612729U UA 116899 U UA116899 U UA 116899U
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Ukraine
Prior art keywords
single crystals
agxgaxge1
xse2
obtaining
zone
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UAU201612729U
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Ukrainian (uk)
Inventor
Галина Петрівна Горгут
Олег Васильович Парасюк
Оксана Миколаївна Юрченко
Ростислав Орестович Влох
Original Assignee
Східноєвропейський Національний Університет Ім. Лесі Українки
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Priority to UAU201612729U priority Critical patent/UA116899U/en
Publication of UA116899U publication Critical patent/UA116899U/en

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Abstract

Спосіб отримання монокристалів AgxGaxGe1-xSe2 (x=0,333; 0,250; 0,200; 0,167) з розплаву включає компоновку шихти з простих речовин Ag, Ga, Ge, Se відповідно до стехіометричного складу, синтез її та вирощування монокристалів вертикальним методом Бріджмена-Стокбаргера. Синтез і ріст проводять в одному і тому ж ростовому кварцовому контейнері. Процес вирощування монокристалів проводять, при наступних параметрах: температура в зоні розплаву 1200-1250 Κ температура в зоні відпалу 750-770 Κ градієнт температури в зоні кристалізації 3-5 Κ/мм швидкість росту 0,2-0,4 мм/год. час відпалу 200-250 год. швидкість охолодження 5 Κ/год.The method of obtaining single crystals AgxGaxGe1-xSe2 (x = 0,333; 0,250; 0,200; 0,167) from the melt involves the arrangement of the charge of simple substances Ag, Ga, Ge, Se according to the stoichiometric composition, synthesis and cultivation of single crystals by the Bridgman-Stockbarger method. Synthesis and growth are carried out in the same growth quartz container. The process of growing single crystals is carried out at the following parameters: temperature in the melt zone 1200-1250 Κ temperature in the annealing zone 750-770 Κ temperature gradient in the crystallization zone 3-5 Κ / mm growth rate 0.2-0.4 mm / h. annealing time 200-250 hours. cooling rate 5 Κ / h.

UAU201612729U 2016-12-13 2016-12-13 METHOD OF OBTAINING AgxGaxGe1-xSe2 Single Crystals (X = 0.333; 0.250; 0.200; 0.167) UA116899U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
UAU201612729U UA116899U (en) 2016-12-13 2016-12-13 METHOD OF OBTAINING AgxGaxGe1-xSe2 Single Crystals (X = 0.333; 0.250; 0.200; 0.167)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
UAU201612729U UA116899U (en) 2016-12-13 2016-12-13 METHOD OF OBTAINING AgxGaxGe1-xSe2 Single Crystals (X = 0.333; 0.250; 0.200; 0.167)

Publications (1)

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UA116899U true UA116899U (en) 2017-06-12

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UAU201612729U UA116899U (en) 2016-12-13 2016-12-13 METHOD OF OBTAINING AgxGaxGe1-xSe2 Single Crystals (X = 0.333; 0.250; 0.200; 0.167)

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UA (1) UA116899U (en)

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