UA152265U - THE METHOD OF GROWING SOLID SOLUTIONS OF THE COMPOSITION Ag<sub>7.75</sub>P<sub>0.25</sub>Ge<sub>0.75</sub>S<sub>6</sub> BY THE METHOD OF DIRECTED CRYSTALLIZATION FROM THE MEL-SOLUTION - Google Patents
THE METHOD OF GROWING SOLID SOLUTIONS OF THE COMPOSITION Ag<sub>7.75</sub>P<sub>0.25</sub>Ge<sub>0.75</sub>S<sub>6</sub> BY THE METHOD OF DIRECTED CRYSTALLIZATION FROM THE MEL-SOLUTION Download PDFInfo
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- UA152265U UA152265U UAU202201118U UAU202201118U UA152265U UA 152265 U UA152265 U UA 152265U UA U202201118 U UAU202201118 U UA U202201118U UA U202201118 U UAU202201118 U UA U202201118U UA 152265 U UA152265 U UA 152265U
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- 238000000034 method Methods 0.000 title abstract 5
- 238000002425 crystallisation Methods 0.000 title abstract 3
- 230000008025 crystallization Effects 0.000 title abstract 3
- 239000000243 solution Substances 0.000 title abstract 3
- 239000000203 mixture Substances 0.000 title abstract 2
- 239000006104 solid solution Substances 0.000 title abstract 2
- 239000013078 crystal Substances 0.000 abstract 3
- 238000000137 annealing Methods 0.000 abstract 2
- 239000000155 melt Substances 0.000 abstract 2
- 239000010453 quartz Substances 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000000265 homogenisation Methods 0.000 abstract 1
- 150000003568 thioethers Chemical class 0.000 abstract 1
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- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Спосіб вирощування твердого розчину складу Ag7.75P0.25Ge0.75S6 методом спрямованої кристалізації з розплаву-розчину включає ступінчасте нагрівання вакуумованих кварцових ампул, які містять попередньо синтезовані тернарні сульфіди Ag7PS6 та Ag8GeS6, взяті у стехіометричному співвідношенні, зі швидкістю 100 K/год. до 1280 K, та витримку при цій температурі протягом 72 год. для гомогенізації розплаву одержаної шихти, та вирощування монокристалів зі швидкістю 0,4-0,5 мм/год. Здійснюють подальше вирощування монокристалів у вакуумованих кварцових ампулах методом спрямованої кристалізації з розплаву-розчину при температурі зони розплаву 1270 K протягом 24 год. та зони відпалу 950 K із подальшим відпалом протягом 72 год. Охолоджують монокристал до кімнатної температури зі швидкістю 5 K/год.The method of growing a solid solution of the composition Ag7.75P0.25Ge0.75S6 by the method of directed crystallization from a melt-solution includes stepwise heating of vacuumed quartz ampoules, which contain pre-synthesized ternary sulfides Ag7PS6 and Ag8GeS6, taken in a stoichiometric ratio, at a rate of 100 K/h. up to 1280 K, and exposure at this temperature for 72 hours. for homogenization of the melt of the obtained charge, and growth of single crystals at a speed of 0.4-0.5 mm/h. Single crystals are further grown in vacuumed quartz ampoules by the method of directed melt-solution crystallization at a temperature of the melt zone of 1270 K for 24 hours. and 950 K annealing zone with further annealing for 72 hours. The single crystal is cooled to room temperature at a rate of 5 K/h.
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UAU202201118U UA152265U (en) | 2022-04-04 | 2022-04-04 | THE METHOD OF GROWING SOLID SOLUTIONS OF THE COMPOSITION Ag<sub>7.75</sub>P<sub>0.25</sub>Ge<sub>0.75</sub>S<sub>6</sub> BY THE METHOD OF DIRECTED CRYSTALLIZATION FROM THE MEL-SOLUTION |
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UAU202201118U UA152265U (en) | 2022-04-04 | 2022-04-04 | THE METHOD OF GROWING SOLID SOLUTIONS OF THE COMPOSITION Ag<sub>7.75</sub>P<sub>0.25</sub>Ge<sub>0.75</sub>S<sub>6</sub> BY THE METHOD OF DIRECTED CRYSTALLIZATION FROM THE MEL-SOLUTION |
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UA152265U true UA152265U (en) | 2023-01-11 |
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UAU202201118U UA152265U (en) | 2022-04-04 | 2022-04-04 | THE METHOD OF GROWING SOLID SOLUTIONS OF THE COMPOSITION Ag<sub>7.75</sub>P<sub>0.25</sub>Ge<sub>0.75</sub>S<sub>6</sub> BY THE METHOD OF DIRECTED CRYSTALLIZATION FROM THE MEL-SOLUTION |
Country Status (1)
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UA (1) | UA152265U (en) |
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2022
- 2022-04-04 UA UAU202201118U patent/UA152265U/en unknown
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