UA153429U - METHOD OF GROWING Ag<sub>186</sub>Ge<sub>93</sub>Er<sub>10</sub>Pr<sub>4</sub>S<sub>300</sub> SINGLE CRYSTALS - Google Patents
METHOD OF GROWING Ag<sub>186</sub>Ge<sub>93</sub>Er<sub>10</sub>Pr<sub>4</sub>S<sub>300</sub> SINGLE CRYSTALS Download PDFInfo
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- UA153429U UA153429U UAU202204538U UAU202204538U UA153429U UA 153429 U UA153429 U UA 153429U UA U202204538 U UAU202204538 U UA U202204538U UA U202204538 U UAU202204538 U UA U202204538U UA 153429 U UA153429 U UA 153429U
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- temperature
- growth
- carried out
- single crystals
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- 238000000034 method Methods 0.000 title abstract 5
- 239000013078 crystal Substances 0.000 title abstract 4
- 238000000137 annealing Methods 0.000 abstract 3
- 230000015572 biosynthetic process Effects 0.000 abstract 3
- 238000003786 synthesis reaction Methods 0.000 abstract 3
- 238000002425 crystallisation Methods 0.000 abstract 2
- 230000008025 crystallization Effects 0.000 abstract 2
- 239000010453 quartz Substances 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000001816 cooling Methods 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Спосіб отримання монокристалів включає компоновку шихти з простих високочистих речовин, її синтез та вирощування монокристалів вертикальним методом Бріджмена-Стокбаргера, при цьому синтез проводять в кварцових ампулах, ріст - в ростовому кварцовому контейнері з конусоподібним дном. Процес синтезу проводять з попереднім зв'язуванням елементарних компонентів у шахтній печі при температурі 1080-1100 K протягом 4 год., а процес вирощування монокристалу проводять при температурі в зоні росту - 1010-1020 K; температурі в зоні відпалу - 650-670 K; градієнті температури в зоні кристалізації - 2,0-2,5 K/мм; швидкості кристалізації - 2,0-2,5 мм/добу; температурі відпалу 650-670 K, часі відпалу - 100-110 год.; швидкості охолодження - 50-70 K/добу.The method of obtaining single crystals includes the composition of a charge of simple highly pure substances, its synthesis and the growth of single crystals by the vertical Bridgman-Stockbarger method, while synthesis is carried out in quartz ampoules, growth - in a growth quartz container with a cone-shaped bottom. The synthesis process is carried out with preliminary binding of elementary components in a mine furnace at a temperature of 1080-1100 K for 4 hours, and the process of growing a single crystal is carried out at a temperature in the growth zone - 1010-1020 K; temperature in the annealing zone - 650-670 K; temperature gradients in the crystallization zone - 2.0-2.5 K/mm; crystallization rate - 2.0-2.5 mm/day; annealing temperature 650-670 K, annealing time - 100-110 hours; cooling rate - 50-70 K/day.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| UAU202204538U UA153429U (en) | 2022-12-02 | 2022-12-02 | METHOD OF GROWING Ag<sub>186</sub>Ge<sub>93</sub>Er<sub>10</sub>Pr<sub>4</sub>S<sub>300</sub> SINGLE CRYSTALS |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| UAU202204538U UA153429U (en) | 2022-12-02 | 2022-12-02 | METHOD OF GROWING Ag<sub>186</sub>Ge<sub>93</sub>Er<sub>10</sub>Pr<sub>4</sub>S<sub>300</sub> SINGLE CRYSTALS |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| UA153429U true UA153429U (en) | 2023-07-05 |
Family
ID=88649457
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| UAU202204538U UA153429U (en) | 2022-12-02 | 2022-12-02 | METHOD OF GROWING Ag<sub>186</sub>Ge<sub>93</sub>Er<sub>10</sub>Pr<sub>4</sub>S<sub>300</sub> SINGLE CRYSTALS |
Country Status (1)
| Country | Link |
|---|---|
| UA (1) | UA153429U (en) |
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2022
- 2022-12-02 UA UAU202204538U patent/UA153429U/en unknown
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