UA95507U - METHOD OF OBTAINING MONO CRYSTALS (Ga55, In45) 2S300 - Google Patents

METHOD OF OBTAINING MONO CRYSTALS (Ga55, In45) 2S300

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Publication number
UA95507U
UA95507U UAU201407822U UAU201407822U UA95507U UA 95507 U UA95507 U UA 95507U UA U201407822 U UAU201407822 U UA U201407822U UA U201407822 U UAU201407822 U UA U201407822U UA 95507 U UA95507 U UA 95507U
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UA
Ukraine
Prior art keywords
carried out
single crystal
temperature
lowered
day
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Application number
UAU201407822U
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Russian (ru)
Ukrainian (uk)
Inventor
Ivan Dmytrovych Olekseiuk
Volodymyr Zinoviiovych Pankevych
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Publication date
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Priority to UAU201407822U priority Critical patent/UA95507U/en
Publication of UA95507U publication Critical patent/UA95507U/en

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Abstract

Спосіб одержання монокристалів (Ga, Іn)Sпередбачає складання шихти з простих речовин, Ga, In, S, вирощування монокристалу на основі попереднього синтезованого полікристалічного зразка, до складу якого входять Ga, In, S. Шихту складають з елементарних складових високого ступеню частоти (99,9999 %), синтезують їх сплав при температурі 1250 К, а ріст монокристалів здійснюють методом Бріджмена у вертикальній двозонній печі, з максимальною температурою 1250 К та зоною відпалу 1150 К і з градієнтом температури на фронті кристалізації 20 К/см, при цьому після розплавлення шихти, ампулу з нею опускають із швидкістю 5 К/добу, відпал здійснюють протягом 100 годин, а після одержання монокристалу піч охолоджують до 820 К зі швидкістю 50…70 К/добу, та остаточне охолодження монокристалу здійснюють в режимі вимкнутої печі до кімнатної температури.The method of obtaining single crystals (Ga, In) S involves the preparation of a mixture of simple substances, Ga, In, S, growing a single crystal based on a previously synthesized polycrystalline sample, which includes Ga, In, S. The charge is made of elementary components of high frequency (99 , 9999%), synthesize their alloy at a temperature of 1250 K, and the growth of single crystals is carried out by the Bridgman method in a vertical two-zone furnace, with a maximum temperature of 1250 K and annealing zone 1150 K and with a temperature gradient at the crystallization front of 20 K / cm, with the charge is lowered, the ampoule with it is lowered at a rate of 5 K / day, annealing is carried out for 100 hours, and after receiving a single crystal the furnace is cooled to 820 K at a rate of 50… 70 K / day, and the final cooling of the single crystal is carried out in the off mode of the oven to room temperature .

UAU201407822U 2014-07-11 2014-07-11 METHOD OF OBTAINING MONO CRYSTALS (Ga55, In45) 2S300 UA95507U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
UAU201407822U UA95507U (en) 2014-07-11 2014-07-11 METHOD OF OBTAINING MONO CRYSTALS (Ga55, In45) 2S300

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
UAU201407822U UA95507U (en) 2014-07-11 2014-07-11 METHOD OF OBTAINING MONO CRYSTALS (Ga55, In45) 2S300

Publications (1)

Publication Number Publication Date
UA95507U true UA95507U (en) 2014-12-25

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Family Applications (1)

Application Number Title Priority Date Filing Date
UAU201407822U UA95507U (en) 2014-07-11 2014-07-11 METHOD OF OBTAINING MONO CRYSTALS (Ga55, In45) 2S300

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UA (1) UA95507U (en)

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