Институт электросварки им. Е.О. Патона национальной академии наук Украины
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Priority to UAA201000455ApriorityCriticalpatent/UA101807C2/en
Publication of UA101807C2publicationCriticalpatent/UA101807C2/en
The invention relates to technology FOR producing of monocrystals and polycrystals of refractory materials (metals, alloys and compounds) by Czochralski method. A device for growth of refractory monocrystals by Czochralski method, comprising the vacuum chamber of crystallization, crystal drawing mechanism and crucible made of refractory material. A crucible made of refractory material by means interlaying facing which is heated by electrical current is passed through its. The use of the invention provides producing of resistant crystals at high temperatures and pressure due to increasing resistance of crucible.
UAA201000455A2010-01-182010-01-18Device for growth of refractory monocrystals czochralski method
UA101807C2
(en)
Sapphire single crystal for producing sapphire single crystal substrate for LED, sapphire single crystal substrate for LED, light-eliciting element, and method for preparing the same
Thermal system of the device for the production of monocrystals, preferably Pr<sub>x</sub> La<sub>1</sub>- <sub>x</sub> AlO<sub>3</sub>, by Czochralski method