WO2012108618A3 - Single crystal growth apparatus using microwaves and growth method thereof - Google Patents

Single crystal growth apparatus using microwaves and growth method thereof Download PDF

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Publication number
WO2012108618A3
WO2012108618A3 PCT/KR2011/009507 KR2011009507W WO2012108618A3 WO 2012108618 A3 WO2012108618 A3 WO 2012108618A3 KR 2011009507 W KR2011009507 W KR 2011009507W WO 2012108618 A3 WO2012108618 A3 WO 2012108618A3
Authority
WO
WIPO (PCT)
Prior art keywords
crucible
microwaves
single crystal
heating unit
growth furnace
Prior art date
Application number
PCT/KR2011/009507
Other languages
French (fr)
Korean (ko)
Other versions
WO2012108618A2 (en
Inventor
김병관
Original Assignee
주식회사유니드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사유니드 filed Critical 주식회사유니드
Publication of WO2012108618A2 publication Critical patent/WO2012108618A2/en
Publication of WO2012108618A3 publication Critical patent/WO2012108618A3/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/20—Aluminium oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides

Abstract

One embodiment of a single crystal growth apparatus of the present invention comprises: a growth furnace constituting an insulating felt thereinside; a crucible which is provided inside the insulating felt and contains raw materials for single crystals, wherein seed crystals are positioned in the crucible; a main heating unit which is configured at the outer side of the crucible and provides heat to the crucible; an auxiliary heating unit which is provided in the growth furnace and heats the heating unit and the raw materials for single crystals within the crucible by microwaves; a heat exchange unit which is configured at the lower part of the crucible and carries out heat exchange with the crucible; and a cooling unit which includes a cooling chamber provided on the outer wall of the growth furnace and provides refrigerants to the cooling chamber.
PCT/KR2011/009507 2011-02-09 2011-12-09 Single crystal growth apparatus using microwaves and growth method thereof WO2012108618A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020110011423A KR101299037B1 (en) 2011-02-09 2011-02-09 Apparatus for growing single crystal using micro-wave and method for growing the same
KR10-2011-0011423 2011-02-09

Publications (2)

Publication Number Publication Date
WO2012108618A2 WO2012108618A2 (en) 2012-08-16
WO2012108618A3 true WO2012108618A3 (en) 2012-10-04

Family

ID=46639014

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2011/009507 WO2012108618A2 (en) 2011-02-09 2011-12-09 Single crystal growth apparatus using microwaves and growth method thereof

Country Status (2)

Country Link
KR (1) KR101299037B1 (en)
WO (1) WO2012108618A2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101464561B1 (en) * 2013-01-17 2014-12-01 주식회사 엘지실트론 Sapphire ingot growing apparatus and rod heater using the same
KR101654423B1 (en) * 2014-10-13 2016-09-07 한국생산기술연구원 Separable seed input Method
CN105648530A (en) * 2016-04-19 2016-06-08 黄山市东晶光电科技有限公司 Kyropoulos-process sapphire crystal growth furnace capable of replacing seed crystals on line
CN105862121A (en) * 2016-04-19 2016-08-17 黄山市东晶光电科技有限公司 Method capable of replacing seed crystal online
KR102129871B1 (en) * 2018-07-16 2020-07-03 엔티씨 주식회사 Continuous vacuum melting furnace
CN110760929A (en) * 2019-12-02 2020-02-07 大连威凯特科技有限公司 Production equipment of straight pull type single crystal silicon rod

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1053485A (en) * 1996-08-07 1998-02-24 Sumitomo Sitix Corp Pulling up of single crystal by electron beam dissolution
JPH11255593A (en) * 1998-03-12 1999-09-21 Super Silicon Kenkyusho:Kk Auxiliary apparatus for melting raw material
KR20100042506A (en) * 2008-10-16 2010-04-26 주식회사 엔씨비네트웍스 Manufacturing device for silicon ingot having refining function

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4513798B2 (en) * 2006-10-24 2010-07-28 信越半導体株式会社 Single crystal manufacturing apparatus and single crystal manufacturing method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1053485A (en) * 1996-08-07 1998-02-24 Sumitomo Sitix Corp Pulling up of single crystal by electron beam dissolution
JPH11255593A (en) * 1998-03-12 1999-09-21 Super Silicon Kenkyusho:Kk Auxiliary apparatus for melting raw material
KR20100042506A (en) * 2008-10-16 2010-04-26 주식회사 엔씨비네트웍스 Manufacturing device for silicon ingot having refining function

Also Published As

Publication number Publication date
KR20120091576A (en) 2012-08-20
KR101299037B1 (en) 2013-08-27
WO2012108618A2 (en) 2012-08-16

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