TWM626115U - Chip detection module and chip transfer device equipped with the same - Google Patents

Abstract

The new model relates to a chip detection module and a chip transfer device equipped with the module, which mainly include a photoelectric sensor, a chip stage and a luminous flux attenuation sheet; Between the light receiving units; wherein, the light transmitting unit transmits the sensing light to the light receiving unit to form an optical path, and the light path passes through the wafer container and the luminous flux attenuation sheet on the wafer stage. Accordingly, the present invention utilizes the luminous flux attenuation sheet to adjust the light quantity of the sensing light, so even if the sensing light passes through the transparent cover of the chip and only a small amount of light quantity attenuates, the photoelectric sensor can easily detect the chip. Moreover, the new type can select luminous flux attenuating sheets with different luminous fluxes according to the actual use situation, so it can be applied to detect all types of chips.

Description

Chip detection module and chip transfer device equipped with the same

The present invention relates to a chip detection module and a chip transfer device equipped with the same, in particular to a chip detection module capable of detecting a chip using a transparent glass as a package cover, and a chip transfer device equipped with the module. load device.

As far as chip packaging technology is concerned, different packaging methods will be adopted for chips with different characteristics and functions. For example, an image sensor such as CCD or CMOS is a device that converts optical signals into analog electrical signals. Therefore, in the packaging of the chip, it is particularly required that the packaging material of the light-receiving surface must use high luminous flux (Luminous flux). flux) materials, try to reduce the light attenuation rate so as not to affect the sensing results, such as transparent glass.

Furthermore, as for the existing wafer inspection equipment, most of them use photoelectric sensors to detect whether the wafer is present or has been positioned. For example, a photoelectric sensor commonly uses a through-beam photoelectric switch, which includes a transmitter and a receiver. The transmitter emits infrared light to the receiver. Once the infrared light is transmitted by the chip, the receiver cannot When receiving infrared light, it is determined that the wafer exists or has been positioned.

In addition, in order to enhance the resistance to external light, that is, to prevent external light from affecting the sensing result, the existing photoelectric sensor usually increases the luminous flux of the infrared light emitted by the transmitter and reduces the illuminance of the receiver. Sensing threshold; so that chips using light-transmitting materials as packaging materials, such as image sensors, cannot be detected smoothly because they cannot block infrared light, resulting in misjudgment.

For further explanation, please also refer to FIG. 1 , which is a schematic diagram of light penetration of the image sensor. However, for the image sensor 1 using the transparent cover plate 11, since the transparent cover plate 11 has good light penetration, even if the chip is already positioned, the infrared light RL emitted by the transmitter will still pass through The transparent cover plate 11 , that is, the infrared light RL cannot be blocked, so that the receiver successfully receives the infrared light RL, and then judges that the wafer does not exist. More simply, conventional chip inspection systems using photoelectric sensors cannot be used to inspect chips in transparent packages.

It can be seen from the above that a chip detection technology that can accurately detect the presence or absence of a transparent packaged chip or whether the positioning of the transparent packaged chip can be accurately detected by using a general photoelectric sensor and through appropriate modification is a high expectation in the industry.

The main purpose of this new model is to provide a chip detection module and a chip transfer device equipped with the same, which can accurately detect the presence or absence of a chip, and is applicable to all chip types, including chips packaged with a transparent cover, And low cost, stable and reliable.

In order to achieve the above purpose, the present invention provides a chip detection module, which mainly includes a photoelectric sensor, a chip carrier and a luminous flux attenuator; the photoelectric detector includes a light transmitting unit and a light receiving unit; the chip carrier is provided with at least one The chip container is used for accommodating the chip; the light flux attenuation sheet is arranged between the light transmitting unit and the light receiving unit; wherein, the light transmitting unit transmits the sensing light to the light receiving unit to form an optical path, and the light path Passing through at least one wafer container and a luminous flux attenuator.

Accordingly, the present invention utilizes the luminous flux attenuation sheet to adjust the light quantity of the sensing light, so even if the sensing light passes through the transparent cover of the chip with only a slight attenuation of the light quantity, the chip can be easily detected. In other words, the present invention can be applied to detect all types of chips, and even the image sensor with transparent glass as the package cover can be accurately detected; moreover, the structure is relatively simple, stable and reliable, and the cost is low.

Preferably, the wafer stage of the present invention may include a wafer-receiving slot, and at least part of the light flux attenuation sheet may be housed in the wafer-receiving slot; and the wafer-receiving slot may be disposed between the light transmitting unit and the wafer-receiving slot. . In addition, the wafer stage can include a long optical path groove extending along the optical path, which can pass through the wafer receiving groove and the wafer receiving groove, and the optical path long groove and the wafer receiving groove can be orthogonal.

In addition, the luminous flux of the luminous flux attenuating sheet of the present invention can be between 10% and 50% of the luminous flux of the sensing light emitted by the light transmitting unit; and the light receiving unit can include an indicator light, when the luminous flux received by the light receiving unit When the luminous flux of the sensing light emitted by the light-transmitting unit is lower than a certain value, the indicator light can emit an indicator light, which is used to indicate that a chip has been detected.

In order to achieve the aforementioned object, the present invention provides a chip transfer device with a chip detection module, which mainly includes a chip carrier, a plurality of photoelectric sensors, and at least one luminous flux attenuator; the chip carrier is provided with a plurality of chip containers, And each chip container is used for accommodating a chip; each photoelectric sensor includes a light transmitting unit and a light receiving unit; and the luminous flux attenuation sheet is arranged between the light transmitting unit and the light receiving unit of the photoelectric sensor. between. Wherein, the light transmitting unit of each photoelectric sensor transmits a sensing light to the light receiving unit to form a light path, and the light path passes through at least one chip container and the at least one light flux attenuation sheet.

In other words, the present invention further provides a chip transfer device with a chip detection module, which can carry multiple chips at the same time, and can detect multiple chips at the same time, especially a single photoelectric sensor can detect two chips at the same time. More than one chip, and a single luminous flux attenuator can also pass through more than two light paths at the same time.

Furthermore, the wafer transfer device of the present invention may further include a control unit and a stage driving unit, and the control unit may be electrically connected to the stage driving unit, and the control unit may control the stage driving unit to drive the wafer stage. move. In addition, the wafer transfer device of the present invention may further include an alarm unit, and the plurality of photoelectric sensors and the alarm unit may be electrically connected to the control unit; when the light flux received by the light receiving unit of one of the plurality of photoelectric sensors is high When the luminous flux of the sensing light emitted by the light transmitting unit has a specific value, the control unit can control the warning unit to issue a warning message, which means that no chip is detected.

Before the chip detection module of the present invention and the chip transfer device equipped with the same are described in detail in this embodiment, it should be noted that in the following description, similar components will be represented by the same component symbols . Furthermore, the drawings of the present invention are for illustrative purposes only, they are not necessarily drawn to scale, and not all details are necessarily shown in the drawings.

Please refer to FIG. 2 , which is a schematic diagram of a first embodiment of the present invention. The first embodiment of the present invention is a chip inspection module 8 , which can be used in chip production equipment and chip inspection equipment in the later stages of the chip production process. , and other electronic devices or equipment that need to sense the presence or absence of chips.

As shown in the figure, the chip detection module 8 of this embodiment mainly includes a photoelectric sensor 2 , a chip stage 3 and a luminous flux attenuation sheet 4 . Among them, the photoelectric sensor 2 used in this embodiment is an infrared light beam-type photoelectric switch sensor, which has a light transmitting unit 21 and a light receiving unit 22, and the light transmitting unit 21 and the light receiving unit 22 The units 22 are respectively disposed on the upper and lower corresponding sides of the wafer stage 3 . On the other hand, the wafer stage 3 defines a wafer container 31 between the light transmitting unit 21 and the light receiving unit 22 , and the wafer container 31 is used for accommodating a wafer C. As shown in FIG.

Furthermore, the light-transmitting unit 21 of the photoelectric sensor 2 can transmit a sensing light to the light-receiving unit 22 to form an optical path WL, and the sensing light is red visible light, so as to facilitate the adjustment of the optical axis, so as to achieve the light-transmitting unit 21 and the light-receiving unit 22 . Alignment between cells 22. In addition, a wafer receiving slot 32 and an optical path long slot 33 are additionally provided on the wafer stage 3, and the two are orthogonal; wherein, the wafer receiving slot 32 is arranged between the optical transmitting unit 21 and the wafer receiving slot 31, and the wafer receiving slot 32 is used to configure the luminous flux attenuating sheet 4 .

Furthermore, in this embodiment, the luminous flux attenuating sheet 4 can be easily assembled through the setting of the container slot 32 , and the luminous flux attenuating sheet 4 with different luminous flux parameters can also be easily replaced according to actual needs, or the configuration quantity of the luminous flux attenuating sheet 4 can be increased or decreased. . In addition, the optical path long groove 33 extends along the optical path WL and penetrates the wafer receiving groove 32 and the wafer receiving groove 3 . In fact, the sensing light emitted by the light transmitting unit 21 will pass through the long optical path slot 33 .

Furthermore, the luminous flux attenuating sheet 4 of this embodiment is made of matte acrylic, but not limited thereto, acrylic or glass with a light-shielding film or other light-shielding or light-scattering microstructures formed on the surface may also be used. In addition, the luminous flux of the luminous flux attenuating sheet 4 can be between 10% and 50% of the luminous flux of the sensing light emitted by the light transmitting unit 21; that is, the luminous flux attenuating sheet 4 can shield between 50% and 90%. The amount of light depends on the transmittance and quantity of the detected component (chip cover) and the sensing threshold of the light receiving unit 22 .

In the present embodiment, the wafer container 31 of the wafer stage 3 is preset to be used for loading an image sensor, and the image sensor is equipped with a transparent cover plate of high-transparency glass (refer to FIG. 1 ). The transmittance is usually as high as 80% or more. Therefore, the luminous flux of the luminous flux attenuating sheet 4 used in this embodiment is 10%; that is, the luminous flux attenuating sheet 4 of this embodiment will attenuate the passing light by about 90%.

On the other hand, the light receiving unit 22 of this embodiment includes an indicator light 221; and when the luminous flux received by the light receiving unit 22 is lower than 2% of the luminous flux of the sensing light emitted by the light transmitting unit 21, the indication The light 221 will emit a light signal; that is, the threshold value of the photoelectric sensor 2 in this embodiment to determine that the light is blocked is 2% of the luminous flux of the original sensing light, if the luminous flux received by the light receiving unit 22 is low At 2% of the luminous flux of the original sensing light, the indicator light will light up to indicate that the sensing light is blocked by the chip.

The actual operation of this embodiment is described as follows. When a wafer is contained in the wafer container 31 on the wafer stage 3, the light flux attenuation sheet 4 and the transparent cover of the wafer (refer to FIG. 1) will transmit the sensing light to 2 % or less; at this time, the indicator light will light up to indicate that the wafer has been completely placed in the wafer container 31 .

Conversely, if there is no wafer contained in the wafer container 31 or the wafer is not placed properly, that is, when the sensing light does not pass through the transparent cover of the wafer (refer to FIG. 1 ); at this time, the light flux is high due to insufficient attenuation of light. When the luminous flux of the sensing light emitted by the light transmitting unit 21 is 2%, the indicator light will not light up, which means that no chip is detected.

Please refer to FIG. 3 and FIG. 4 together. FIG. 3 is a system architecture diagram of the second embodiment of the present invention, and FIG. 4 is a schematic diagram of the second embodiment of the present invention. The following second embodiment is used to illustrate that the wafer detection module 8 of the above embodiment is applied to a wafer transfer device 9, such as an output shuttle on a wafer detection apparatus.

As shown in FIG. 3 , the wafer transfer device 9 of this embodiment mainly includes a control unit 5 , a stage driving unit 6 , a warning unit 7 and a photoelectric sensor 2 ; and the stage driving unit 6 , the warning unit 7 and the photoelectric sensor 2 The detector 2 is electrically connected and controlled by the control unit 5 . The control unit 5 controls the stage driving unit 6 to drive the wafer stage 3 to move. In addition, the warning unit 7 can issue a warning message, which can be a warning light signal, a sound or a display message on a computer screen, for reporting the detection result of the photoelectric sensor 2 .

Also, as shown in FIG. 4 , the wafer stage 3 is provided with 8 wafer container slots 31 , 2 wafer container slots 32 and 4 optical path long slots 33 ; wherein, each optical path long slot 33 is connected in series with 2 wafer container slots 33 . grooves 31 , and each container groove 32 spans two optical path length grooves 33 . That is to say, each luminous flux attenuator 4 will be shared by two sets of photoelectric sensors 2 , and each photoelectric sensor 2 will simultaneously sense the chips in the two chip chambers 31 .

However, for the setting of this embodiment, since the luminous flux of the transparent cover plate of each chip is about 80%, and the sensing threshold of the light receiving unit 22 is 2% luminous flux, the luminous flux attenuating sheet of this embodiment is The luminous flux of 4 is set to 20%, that is, the light quantity of the detection light passing through the luminous flux attenuation sheet 4 will be attenuated by about 80%.

In this way, when one of the chips is not placed in the chip container 31, since there is one less transparent cover for the chip to attenuate the sensing light, the luminous flux of the sensing light received by the light receiving unit 22 is about 4%. , will exceed the sensing threshold value by 2%, at this time, the control unit 5 will control the warning unit 7 to issue a warning message. Only when all the wafer accommodating slots 31 contain wafers, it belongs to the normal state, and the warning unit 7 will not act.

Based on the above, the new model has at least the following advantages: (1) Through simple transformation, that is, arranging a luminous flux attenuation sheet between the light transmitting unit and the light receiving unit, the detection of the chip with a transparent cover can be realized; the structure is simple, the cost is low, and it is stable and reliable; (2) Using the luminous flux attenuator to adjust the light amount of the sensing light, it will be suitable for detecting all types of chips, and even the image sensor with transparent glass as the package cover can be accurately detected; (3) The luminous flux attenuating sheet with different luminous flux values can be easily replaced according to different needs; in other words, the luminous flux value of the luminous flux attenuating sheet can be simply set for different light transmittance chips or different numbers of detected chips to achieve detection function; (4) Through the setting of the container slot, the luminous flux attenuator can be easily assembled, and the luminous flux attenuator can be easily replaced, increased or decreased in number, or even removed according to actual needs.

The above-mentioned embodiments are only examples for convenience of description, and the scope of the claimed rights of the present invention should be based on the scope of the patent application, rather than being limited to the above-mentioned embodiments.

1: Image sensor 2: Photoelectric sensor 3: Wafer stage 4: Luminous flux attenuator 5: Control unit 6: Carrier drive unit 7: Warning unit 8: Chip detection module 9: Wafer transfer device 11: Transparent cover 21: Optical sending unit 22: Light receiving unit 31: Wafer container 32: Receiver slot 33: Optical path long groove 221: Indicator light C: wafer RL: infrared light WL: Light Path

FIG. 1 is a schematic diagram of light penetration of an image sensor; FIG. 2 is a schematic diagram of the first embodiment of the present invention; FIG. 3 is a system architecture diagram of the second embodiment of the present invention; FIG. 4 is a schematic diagram of the second embodiment of the present invention.

2: Photoelectric sensor

3: Wafer stage

4: Luminous flux attenuator

8: Chip detection module

21: Optical sending unit

22: Light receiving unit

31: Wafer container

32: Receiver slot

33: Optical path long groove

221: Indicator light

C: wafer

WL: Light Path

Claims (10)

A chip detection module, comprising: a photoelectric detector, which includes a light transmitting unit and a light receiving unit; a wafer stage having at least one wafer container for accommodating a wafer; and a luminous flux attenuator, disposed between the light transmitting unit and the light receiving unit; Wherein, the light-transmitting unit transmits a sensing light to the light-receiving unit to form a light path, and the light path passes through the at least one chip container and the light flux attenuation sheet. The chip detection module of claim 1, wherein the chip stage comprises a receiving groove, and at least a part of the light flux attenuating sheet is received in the receiving groove. The chip detection module of claim 2, wherein the chip container is disposed between the light transmitting unit and the at least one chip container. The wafer detection module of claim 2, wherein the wafer stage includes a long optical path groove extending along the optical path; the long optical path groove passes through the chip receiving groove and the at least one chip receiving groove; the optical path length The slot is orthogonal to the container slot. The chip detection module of claim 1, wherein the luminous flux of the luminous flux attenuation sheet is between 10% and 50% of the luminous flux of the sensing light emitted by the light transmitting unit. The chip detection module of claim 1, wherein the light-receiving unit includes an indicator light; when the luminous flux received by the light-receiving unit is lower than a specific value of the luminous flux of the sensing light emitted by the light-transmitting unit , the indicator will emit an indicator signal. A chip transfer device with a chip detection module, comprising: a wafer stage, which is provided with a plurality of wafer cavities, each of which is used for accommodating a wafer; a plurality of photoelectric sensors, each photoelectric sensor includes a light transmitting unit and a light receiving unit; and At least one luminous flux attenuating sheet is disposed between the light transmitting unit and the light receiving unit of the plurality of photoelectric sensors; Wherein, the light transmitting unit of each photoelectric sensor transmits a sensing light to the light receiving unit to form an optical path, and the optical path passes through at least one of the plurality of chip chambers and the at least one luminous flux attenuating sheet. The wafer transfer device of claim 7, further comprising a control unit and a stage driving unit, the control unit is electrically connected to the stage driving unit, and the control unit controls the stage driving unit to drive the wafer carrier table moves. The wafer transfer device of claim 8, further comprising a warning unit, the plurality of photoelectric sensors and the warning unit are electrically connected to the control unit; when the light receiving unit of one of the plurality of photoelectric sensors receives When the received luminous flux is higher than a specific value of the luminous flux of the sensing light emitted by the light transmitting unit, the control unit controls the warning unit to issue a warning message. The wafer transfer device as claimed in claim 9, wherein the wafer stage comprises at least one accommodating groove, and at least part of the at least one luminous flux attenuating sheet is accommodated in the at least one accommodating groove; the at least one accommodating groove is a It is arranged between the light transmitting units of the plurality of photoelectric sensors and the plurality of chip containers.

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