TWM610912U - Atomic layer deposition equipment capable of reducing precursor deposition - Google Patents

Abstract

The present disclosure relates to an atomic layer deposition equipment capable of reducing precursor deposition which has a chamber, a substrate tray, a precursor baffle and at least one exhaust port, wherein the precursor baffle is disposed on the inner side of part of the inner surface of the chamber, and the inner surface includes at least one gas inlet. In the atomic layer deposition process, the gas can be introduced into the gap between the inner surface of the chamber and the precursor baffle through the gas inlet to prevent the precursor from entering the space between the chamber and the precursor baffle, so that the exhaust port can exhaust the precursor that has not reacted with the substrate. The an atomic layer deposition equipment can prevent the precursor from adhering to the inner surface of the chamber, so as to reduce the cleaning cycle of the chamber and improve the yield of product.

Description

Atomic layer deposition equipment capable of reducing precursor deposition

The present invention relates to an atomic layer deposition equipment that can reduce the deposition of precursors. An air wall can be formed between the shield and the inner wall surface to prevent unreacted precursors from remaining on the atomic layer on the inner surface of the cavity during the atomic layer deposition process. Deposition equipment and process methods.

The development of integrated circuit technology has matured, and current electronic products are developing towards the trend of light, thin, short, high performance, high reliability and intelligence. The miniaturization technology of transistors in electronic products is very important. Small size transistors will have an important impact on the performance of electronic products. When the size of the transistor becomes smaller, the current transmission time and energy consumption can be reduced to achieve fast calculations. And the effect of energy saving. In today's tiny transistors, some of the key thin film layers are almost only a few atoms thick, and one of the technologies to develop these microstructures is the atomic layer deposition process (ALD process).

The atomic layer deposition process is a technique in which substances are deposited layer by layer on the surface of the substrate in the form of single atoms. In the process, the precursor of the reaction is chemically adsorbed on the surface of the substrate or the previous layer of film. Produce thin and uniform films. The traditional atomic layer deposition equipment draws out the unreacted precursor through the bottom exhaust port. However, when the unreacted precursor flows toward the bottom of the cavity, the precursors often remain everywhere in the cavity. Please refer to Figure 1 1 is a schematic diagram of a conventional atomic layer deposition equipment. As shown in FIG. 1, the unreacted precursor P1 is often attached to the inner wall 101 and the inner bottom surface 102 of the cavity 1 when it moves toward the bottom suction port O101. And the adjacent area 103 between the bottom of the cavity 1 and the bottom of the supporting device S0 (the inner wall 101, the inner bottom surface 10 and the adjacent area 103 of the cavity 1 can be collectively referred to as the inner surface of the cavity), in which a dense film remains and forms The precursor P1 will cause the cavity to be dirty and coated, and may form particles and peelings attached to the substrate, which will adversely affect the subsequent manufacturing process and product yield.

Since the cavity of the atomic layer deposition equipment is difficult to overcome the problem of dirt coating, regular cleaning of the cavity is one of the current methods to reduce dirt. The traditional method of cleaning the cavity is to directly brush off the dirt on the inner surface of the cavity. However, because the attached precursors are very dense, the cleaning process is time-consuming and labor-intensive, and causes additional cleaning costs. It may even be difficult to completely remove the attached Precursors, and need to shorten the cleaning cycle, resulting in a decline in production line production efficiency. Therefore, how to properly remove the precursors deposited in the cavity is an issue to be overcome in the current atomic layer deposition process.

In order to overcome the shortcomings of the conventional technology, the embodiment of the present invention provides an atomic layer deposition equipment and process method that can reduce the deposition of precursors, which can reduce the adhesion of unreacted precursors to the cavity, thereby reducing the generation of dirt and extending the cavity. Body cleaning cycle.

The present model provides an atomic layer deposition equipment, which includes a cavity, a carrying device, a shielding member, at least one air extraction port and at least one air inlet, wherein the carrying device and the shielding member are arranged in the accommodating space of the cavity, and the air extraction port And the air inlet is in fluid communication with the accommodating space of the cavity. The shielding member is used to shield a part of the inner surface of the cavity, and an air inlet is arranged on a part of the inner surface of the cavity that is shielded by the shielding member. In the atomic layer deposition process, gas can be introduced into the cavity through the gas inlet, so that the gas enters and diffuses into the gap between the inner surface of the cavity and the shielding member and diffuses into the accommodating space of the cavity, thereby increasing the cavity The gas pressure in the internal part of the accommodating space is used to assist the suction port to extract most unreacted precursors. The gas can be selected to be a gas that does not react with the precursors and does not corrode the cavity, such as inert gas or nitrogen. The atomic layer deposition equipment can reduce the attachment of precursors to the inner surface of the cavity, thereby reducing the dirt coating caused to the cavity, so as to optimize the product yield and extend the cleaning cycle of the equipment.

In short, the atomic layer deposition equipment provided by the embodiments of the present invention can pass gas between the inner surface (for example, the inner wall) of the cavity and the shielding member through the air inlet, and the gas circulates between the inner surface and the shielding member. Then, it enters the accommodating space of the cavity to generate positive pressure to assist most of the unreacted precursors to be pumped out through the suction port. The remaining small amount of unreacted precursors can adhere to the shielding member instead of the inner surface of the cavity (for example, the inner wall and the inner bottom surface). In addition, the atomic layer deposition equipment may further include a second opening located on other inner surfaces (for example, the inner bottom surface) of the cavity, and can form a positive pressure in the cavity after introducing a gas (for example, inert gas or nitrogen) to assist The remaining precursors are drawn away by the suction port, and the adhesion of the precursors to the inner bottom surface of the cavity can be reduced. The atomic layer deposition equipment of the present invention can assist most unreacted precursors to be drawn away by the suction port, so as to reduce the accumulation of dirt in the cavity, thereby prolonging the life of the cavity and prolonging the cleaning cycle of the equipment. When the dirt deposited in the cavity is reduced, the product yield can be further improved, so the process and the market (such as integrated circuits) that require atomic layer deposition have advantages.

In order to achieve the above objective, the present invention provides an atomic layer deposition equipment that can reduce the deposition of precursors, including: a cavity, including an inner surface for defining an accommodating space; a carrying device, arranged in the cavity of the accommodating body In the space, it is used to carry at least one substrate; at least one air extraction port is fluidly connected to the containing space of the cavity for drawing out at least one unreacted precursor in the cavity; and a shielding member is arranged in the containing space of the cavity And shield part of the inner surface of the cavity, and there is a gap between the shielding member and the inner surface of the cavity, the gap communicates with the accommodating space; and at least one air inlet, and the shielding member shields the air inlet, The port is used for introducing a gas between the shielding member and the inner surface of the cavity, so that the gas diffuses into the gap between the shielding member and the cavity, and then diffuses to the accommodating space of the cavity through the gap.

The present model provides an atomic layer deposition process method using the above atomic layer deposition equipment capable of reducing precursor deposition. The method includes: transporting a precursor to the accommodating space of a cavity, and delivering gas to the inner surface of the cavity through an air inlet Between the shielding member and the shielding member, the gas diffuses into the gap between the shielding member and the cavity, and then diffuses to the accommodating space of the cavity through the gap, and the cavity is pumped through the air extraction port; and the transmission of the precursor to the cavity is stopped Through the air inlet, the gas is continuously delivered between the inner surface of the cavity and the shielding member, and the cavity is continuously pumped through the air inlet.

In the atomic layer deposition equipment capable of reducing the deposition of precursors, the inner surface includes an inner wall and an inner bottom surface, the shielding member is used to cover part of the inner wall surface and part of the inner bottom surface of the cavity, and the gas passes through the air inlet The port is introduced and diffused into the gap between the shielding element and the inner wall surface of the cavity, and into the gap between the shielding element and the inner bottom surface and the inner wall surface, and then diffuses to the accommodating space of the cavity through the gap.

The atomic layer deposition equipment that can reduce the deposition of precursors further includes at least one second air extraction port located on the inner bottom surface of the cavity and fluidly connected to the accommodating space of the cavity for drawing out the accommodating space of the cavity. Gas or at least one precursor.

The atomic layer deposition equipment that can reduce the deposition of precursors further includes at least one hollow part, the air suction port is located in the hollow part, and the position of the hollow part is higher than the carrying device.

The atomic layer deposition equipment that can reduce the deposition of precursors further includes a stopper located below the hollow part, and an upper air extraction path is formed between the stopper and the air extraction port of the hollow part.

In the atomic layer deposition equipment capable of reducing precursor deposition, the stopper has a bottom and at least one annular protrusion, the annular protrusion is arranged on the surface of the bottom, and the bottom of the stop is connected to the carrying device.

The described atomic layer deposition equipment capable of reducing the deposition of precursors, wherein the shielding member further includes a feed port, the substrate is transported into the cavity through the feed port, and the gas is also introduced between the feed port and the inner surface of the cavity .

In the atomic layer deposition equipment capable of reducing the deposition of precursors, the shielding member further includes at least one channel, which is fluidly connected to the inlet, and the gas introduced from the inlet is transported to the inlet through the channel to prevent the precursors from entering The feed inlet of the shield.

The described atomic layer deposition equipment can reduce the deposition of precursors, wherein the gas does not react with the precursors.

In order to make the above and other objectives, features and advantages of the present invention more obvious and understandable, detailed descriptions are made as follows in conjunction with the accompanying drawings.

In order to fully understand the purpose, features and effects of the present invention, a detailed description of the present invention is given with the following specific embodiments and accompanying drawings. The description is as follows.

The present model provides an atomic layer deposition equipment, which includes a cavity, a carrying device, a shield, at least one air extraction port and at least one air inlet, and may further include a shield and a nozzle, wherein the shield is arranged on the inner surface of the cavity ( For example, there is a first passage between the inner wall surface or the inner bottom surface of the cavity and the inner wall surface of the cavity. In the atomic layer deposition process, the precursor inlet can provide a precursor, and the precursor reacts with the substrate or the material (for example, wafer) on the substrate surface, and the unreacted precursor remains in the cavity.

The air inlet of the atomic layer deposition equipment can be located on the inner wall of the cavity, through the air inlet, gas (for example, inert gas or nitrogen) can be passed between the shield and part of the inner surface of the cavity, and in the cavity Part of the accommodating space of the body forms a higher pressure environment to prevent unreacted precursors from entering between the shield and part of the inner surface of the cavity, so that the gas diffuses into the gap between the shield and the cavity, and diffuses through the gap In the accommodating space of the cavity, the auxiliary unreacted precursor is drawn away by the suction port, and the remaining very small amount of unreacted precursor is attached to the shielding member. Atomic layer deposition equipment can make most of the unreacted precursors evacuated through the exhaust port, and prevent unreacted precursors from adhering to the inner surface of the cavity (for example, the inner wall, inner bottom surface of the cavity and the bottom of the cavity) The area adjacent to the bottom of the carrying device). The atomic layer deposition equipment can reduce the adhesion of dirt in the cavity, so as to reduce the cleaning cycle of the cavity, improve the cleaning efficiency, extend the life of the cavity, and improve the product yield.

First, please refer to FIG. 2, which is a schematic diagram of an atomic layer deposition apparatus according to an embodiment of the present invention. As shown in the figure, the atomic layer deposition apparatus 2 includes a cavity 201, a carrying device 202, at least one air extraction port 203, a shield 204, and at least one air intake O2012.

The cavity 201 includes an inner surface S, and the accommodating space 22 is defined by the inner surface S. The inner surface S includes an inner wall surface S1 and an inner bottom surface S2, wherein the inner wall surface S1 is arranged around the inner bottom surface S2, and a plurality of air inlets O2012 are provided on the inner wall surface S1. The carrying device 202 and the shielding member 204 are disposed in the accommodating space 22 of the cavity 201, wherein the shielding member 204 shields a part of the inner surface S of the cavity 201, and there is a gap G1 between the shielding member 204 and the inner surface S of the cavity 201 , Where the gap G1 communicates with the accommodating space 22. The suction port 203 fluidly communicates with the containing space 22 of the cavity 201 and is used to draw out at least one unreacted precursor P1 in the containing space 22.

In an embodiment of the present invention, the shielding member 204 is disposed in the cavity 201, and shields a part of the inner wall surface S1 of the cavity 201, and shields the air inlet O2012. The shielding member 204 may be a combination of the first shielding member 2041 and the second shielding member 2042, and there may be a gap G2 between the first shielding member 2041 and the second shielding member 2042. The appearance of the shielding member 204 may be, for example, a hollow cylindrical body, and a first channel d1 is formed in the gap G1 between the shielding member 204 and a part of the inner wall surface S1 of the cavity 201. In other embodiments, the shielding member 204 may only include the first shielding member 2041, and the top of the first shielding member 2041 may also extend upward, and the first shielding member 2041 may also have pores to allow gas to pass through.

In another embodiment of the present invention, the shielding member 204 includes a horizontally extending portion H204 and a longitudinally extending portion V204 connected to each other. The longitudinal extension portion V204 is disposed on the inner side of a part of the inner wall surface S1 of the cavity 201 and used to shield a part of the inner wall surface S1. A first channel d1 is formed between the longitudinal extension portion V204 and the inner wall surface S1. The lateral extension part H204 is arranged on the inner side of a part of the inner bottom surface S2 of the cavity 201 and used to shield a part of the inner bottom surface S2. The gap G1 between the lateral extension part H204 and the inner bottom surface S2 forms a second channel d2, but the present invention does not The length of the horizontal extension portion H204 and the longitudinal extension portion V204 and the range of shielding the inner surface S of the cavity 201 are restricted. The longitudinal section of the shielding member 204 is partially L-shaped, but the present invention is not limited to this.

3, the horizontal extension H204 of the shielding member 204 has a flat annular structure and forms the bottom of the shielding member 204, and the longitudinal extension V204 is arranged around the horizontal extension H204 and has a hollow cylindrical appearance. The horizontal extension part H204 and the longitudinal extension part V204 are not limited to be integrally formed or combined. In other embodiments, the shielding member 204 may also only include the longitudinally extending portion V204.

The atomic layer deposition apparatus 2 may further include a shower head 206, wherein the shower head 206 is fluidly connected to the cavity 201 for transmitting the precursor P1 or the scrubbing gas into the cavity 201. The spray head 206 can protrude from the inner surface S of the cavity 201 and is located in the accommodating space 22 of the cavity 201. In different embodiments, the shower head 206 can be embedded in the cavity 201 and is a plurality of openings provided on the inner surface S of the cavity 201, such as the top surface, without protruding from the inner surface S of the cavity 201. In other embodiments, the nozzle 206 may be replaced by a precursor air inlet 206', wherein the precursor air inlet 206' is in fluid communication with the accommodating space 22 of the cavity 201.

During the atomic layer deposition process, the precursor P1 that is to be deposited and reacted with the substrate W (for example, wafer) or the substrate surface can be transported into the cavity 201 by the shower head 206, and some of the precursor P1 will proceed. Reaction, and most of the unreacted precursors P1 can be drawn out of the cavity 201 through the suction port 203.

In the present invention, the gas G is introduced between the inner surface S of the cavity 201 and the shield 204 through the air inlet O2012, so that the gas G diffuses to the gap G1 between the shield 204 and the inner surface S of the cavity 201, and It diffuses into the accommodating space 22 of the cavity 201 through the gap G1, so that part of the accommodating space 22 of the cavity 201 generates a positive pressure or forms a gas wall, and the auxiliary air extraction port is used to extract the unreacted precursor P1. The gas is selected from inert gas or Nitrogen or other gases that do not react with precursors and do not attack the atomic layer deposition equipment 2.

As shown in Figure 2, the air inlet O201 is located on the inner wall S1 of the cavity 201 that is blocked by the shielding member 204, and gas G can be introduced through the air inlet O2012 between the inner wall S201 of the cavity 201 and the shielding member 204 . More specifically, the gas G is introduced through the air inlet O201 between the inner bottom surface S2 of the cavity 201 and the lateral extension H204 of the shielding member 204 (that is, at the second passage d2), so as to make the cavity 201 a second containment. The setting space 223 forms a positive pressure and/or is introduced between the inner wall surface S1 of the cavity 201 and the longitudinal extension V204 of the shielding member 204 (ie, at the first passage d1).

Specifically, the accommodating space 22 in the cavity 201 can be divided into a first accommodating space 221 and a second accommodating space 223, wherein the first accommodating space 221 is located above the carrying device 202 and the cavity 201 The second accommodating space 223 is located between the lower part of the carrying device 202 and the inner surface S of the cavity 201.

The lateral extension portion H204 of the shield 204 is located in the second accommodating space 223 of the cavity 201, and there is a gap G1 between the lateral extension portion H204 and the inner bottom surface S2 of the cavity 201, and the gap G1 is connected to the second accommodating space 223. After the gas G is introduced between the inner bottom surface S2 of the cavity 201 and the lateral extension H204 of the shielding member 204, the gas G diffuses into the gap G1 and diffuses into the second accommodating space 223 via the gap G1. The top end of the longitudinal extension portion V204 of the shield 204 is located in the first accommodating space 221 of the cavity 201, and there is a gap G1 between the longitudinal extension portion V204 and the inner wall surface S1 of the cavity 201, and the gap G1 is connected to the first accommodating space 221. After the gas G is introduced between the inner wall surface S1 of the cavity 201 and the longitudinal extension V204 of the shielding member 204, the gas G diffuses into the gap G1 and then diffuses to the first accommodating space 221 through the gap G1. In some embodiments, the shielding member 204 may include a first shielding member 2041 and a second shielding member 2042, and there is a gap G2 between the first shielding member 2041 and the second shielding member 2042, and the gas G can diffuse into the gap G1 and pass through The gap G2 spreads to the first accommodating space 221 or the second accommodating space 223.

Specifically, the nozzle 206 or the precursor air inlet 206' is located on the inner top surface S3 of the cavity 201, and the suction port 203 is also located on the inner top surface S3 of the cavity 201, that is, the nozzle 206 and the suction port 203 are arranged adjacent to each other . In this way, the precursor P1 can be restricted to the first accommodating space 221 of the cavity 201 to save the amount of the precursor P1 and make the precursor P1 less likely to adhere to other areas of the cavity 201 (for example, the second The accommodating space 223) is used to reduce the probability of the cavity 201 being adhered to by dirt.

In other embodiments, the first stopper 204 may be connected to the inner bottom surface S2 or the inner wall surface S1 of the cavity 201, and the connection between the first stopper 204 and the inner bottom surface S2 or the inner wall surface S1 may have a gap to make The gas G can diffuse to every part of the gap G1 and then circulate to the accommodating space 22 of the cavity 201.

When the gas G is introduced into the cavity 201, the air pressure in the second accommodating space 223 is greater than the pressure in other areas of the cavity 201, so that the precursor P1 is pushed above the shielding member 204 and/or the carrying device 202, so that the air extraction port can be assisted 203 continuously pulls the precursor P1 away from the cavity 201 to prevent the precursor P1 from remaining on the inner surface S of the cavity 201 or other equipment, such as the inner wall S1, the inner bottom surface S2, the supporting device 202, the shielding member 204, and The boundary area between the cavity 201 and the carrying device 202.

In other embodiments, the shielding member 204 provided in the cavity may only include the longitudinal extension portion V204 for shielding a part of the inner wall surface S1 of the cavity 201. Introduce gas G through a plurality of air inlets O2012 between part of the inner wall S1 of the cavity 201 and the shielding member 204, and the gas G diffuses from the gap G1 to the accommodating space 22, thereby preventing precursors from remaining on the inner wall of the cavity 201面 S1. As shown in Figure 4, in another embodiment of the present invention, the shielding member 204' is a hollow cylindrical body.

The shielding member 204' includes a feed port O204' and at least one channel O2041'. The channel O2041' is in fluid communication with the feed port O204', wherein the feed port O204' is used to transport the substrate W into the cavity 201. The channel O2041' is a groove provided on the outer surface of the shielding member 204' and fluidly communicates with the feed port O204'.

When the shielding member 204' is disposed in the cavity 201 and the atomic layer deposition process is performed, the gas G introduced from the gas inlet O2012 can also be transported to the inlet O204' through the channel O2041' to form a gas wall and/or positive Pressure, that is, when the gas G is introduced between the part of the inner wall S1 of the cavity 201 and the shielding member 204 through the plurality of air inlets O2012, the gas G is also introduced between the inlet O204' and the inner surface of the cavity 201 Therefore, the precursor can be prevented from entering the feed opening O204' of the shield 204'. The path of the passage O2041' and the gas G is not limited to the bottom-up as shown in FIG. 4, but can also be top-to-bottom, left-to-right, right-to-left or other paths, and its purpose is to form a gas wall and/or positive pressure. In order to prevent the precursors from being deposited on the inlet O204' of the shielding member 204'. Of course, the shielding member 204 shown in FIG. 3 can also be provided with a channel O241' and a feed port O204'.

Please refer to FIG. 5, which is a schematic structural diagram of another embodiment of the new type of atomic layer deposition equipment. The structure of the atomic layer deposition apparatus 2'according to the embodiment of the present invention is substantially the same as that of FIG. 2, except that the atomic layer deposition apparatus 2'further includes a hollow part 203', at least one stopper 205, and a second air extraction port O2013 'And the second opening O2013, wherein the position of the hollow part 203' is higher than the carrying device 202, the stopper 205 is located below the hollow part 203', and the second suction port O2013' and the second opening O2013 are both located in the cavity 201 The surface S is adjacent to the bottom of the supporting device 202. More specifically, the bottom part H205 of the stopper 205 is connected to the carrying device 202, and the stopper 205 is disposed on the outer edge of the carrying device 202 and below the hollow part 203, and the second suction port O2013' and the second opening O2013 are located in the cavity. The inner bottom surface S2 of the body 201, and the second suction port O2013' and the second opening O2013 are in fluid communication with the accommodating space 22 of the cavity 201.

The hollow member 203' has an air extraction port O2031 and a top opening O2032, and has a hollow area penetrating the air extraction port O2031 and the top opening O2032, wherein the hollow area can communicate with the outside of the cavity 201. The hollow member 203' and the suction port O2031 are used to extract at least one unreacted precursor from the cavity 201. Furthermore, the unreacted precursor P1 in the containing space 22 of the cavity 201 can also be drawn out through the second exhaust port O2013'. The hollow part 203' and the second air extraction port O2013' will also extract the gas G in the accommodating space 22.

In the present invention, a part of the bottom of the hollow component 203 is correspondingly located above the carrying device 202, but the present invention is not limited to this. The bottom of the hollow component can also be completely located above the carrying device, or the hollow component The bottom can also be completely above the outside of the carrying device. Furthermore, the air extraction port O2031 of the hollow part 203' is located at the bottom of each hollow part 203', but the present invention is not limited by this. The air extraction port can also be located on the side of the hollow part, and the present invention does not limit the hollow part either. The appearance of the hollow area with the hollow path.

The stopper 205 is located below the hollow part 203' and has a bottom H205 and at least one annular protrusion V205 connected to each other (but the annular part cannot be seen in Fig. 5). Please refer to FIG. 6, the bottom H205 of the stopper 205 may be a flat annular structure, and the annular protrusion V205 is a convex structure provided on the (upper) surface of the bottom H205. The annular protrusion V205 of the stopper 205 corresponds to the air extraction port O2031 of the hollow member 203, and an upper air extraction path p205 is formed between the stopper 205 and the air extraction port O2031 of the hollow member 203. The driving object is guided to the suction port O2031 of the hollow member 203, and the bottom H205 of the stopper 205 is connected to the carrying device 202. In other embodiments, the annular protrusion V205 of the stopper 205 may not correspond to the suction port 02031 of the hollow member 203, or may not have the stopper 205, and the hollow member 203' may be replaced by the suction port.

As shown in FIG. 5, it is only an embodiment of the present invention, and not a limitation of the scope of rights of the present invention. In other embodiments, the stopper 205 can also be connected to the hollow component 203 through the annular protrusion V205. No matter whether the stopper 205 is connected to the carrier device 202 or the hollow component 203, it can be integrally formed or combined.

In the present invention, the cross-sections of the annular protrusion V205 and the bottom H205 of each stopper 205 are in an inverted T shape, but the present invention is not limited to this, and may be, for example, L-shaped in different embodiments. As shown in Figure 6, the stopper 205 is an annular structure formed by at least one annular protrusion V205 and a bottom H205, wherein the annular protrusion V205 and the bottom H205 of the stopper 205 are not limited to be integrally formed or It is composed of multiple parts.

In an embodiment of the present invention, the atomic layer deposition apparatus 2'may include at least one second opening O2013, wherein the second opening O2013 is located on the inner bottom surface S2 of the cavity 201. The second opening O2013 can be used to introduce gas G into the cavity 201 and form a positive pressure in the second accommodating space 223 of the cavity 201 to prevent precursors from remaining on the carrier device 202 (for example, the bottom of the carrier device).

The hollow member 203 is located in the first accommodating space 221, and part or all of the shielding member 204 is located in the second accommodating space 223. For example, the longitudinal extension V204 of the shielding member 204 can extend from the second accommodating space 233 to the first accommodating space 221 The air inlet O2011 is usually connected to the inner wall S1 located in the second accommodating space 223, more specifically the inner wall S1 blocked by the shielding member 204, and the second opening O2013 is connected to the inner wall S1 located in the second accommodating space 223 The inner bottom surface S2 does not limit the bottom of the adjacent supporting device 202.

The air inlet O2011 and/or the second opening O2013 introduces the gas G into the second accommodating space 223 of the cavity 201, which can increase the gas pressure in the second accommodating space 223 and reduce the precursors entering the second accommodating space 223的量。 The amount. This prevents precursors from remaining on the inner wall S1, the inner bottom surface S2, the shielding member 204, the bottom surface of the supporting device 202, and/or the lifting mechanism at the bottom of the supporting device 202 in the second accommodating space 223.

FIG. 7 is a schematic diagram of an atomic layer deposition apparatus according to another embodiment of the present invention. As shown in the figure, the atomic layer deposition apparatus 2" includes a cavity 201, a carrying device 202', at least one exhaust port O203, a shield 204, and at least An air inlet O2012 and a precursor air inlet 206'.

The functions of the cavity 201, the suction port O203, the shielding member 204, and the intake port O2012 are not different from the aforementioned functions, so they will not be repeated here.

The carrier device 202' is used to load the substrate W (for example, a wafer), and the number of the substrate W to be loaded is not limited to a singular or plural number. The difference between the carrying device 202' and the foregoing embodiment lies in the arrangement or quantity of the loaded substrates W. The carrying device 202 described in FIGS. 2 and 5 is similar to a platform, and at least one substrate W is placed on the upper surface of the carrying device 202. , Wherein the substrate W is approximately parallel to the horizontal plane. In contrast, the substrate W loaded by the carrying device 202' of the embodiment of the present invention is perpendicular to the horizontal plane, and there is a gap between adjacent substrates W.

The precursor air inlet 206' is in fluid communication with the accommodating space 22 of the cavity 201, and the function of the precursor air inlet 206' is similar to the aforementioned nozzle 206, and both are used to transport the precursor P1 to the cavity 201 The accommodating space 22 can also be replaced by the spray head 206. The positions of the precursor air inlet 206' and the air extraction opening 203 are opposite to each other, and the carrier device 202 and the substrate W are located between the precursor air inlet 206' and the air extraction opening 203, for example, the precursor air inlet 206' is provided Above the cavity 201, the suction port 203 is provided below the cavity 201, and the inner wall S1 where the gas inlet O2012 is provided is the same as the top surface of the precursor gas inlet 206' and/or the suction port 203. And the inner bottom surface S2 are adjacent to each other, but the present invention is not limited to this. Of course, the atomic layer deposition apparatus 2" may also include the second opening O2013 shown in FIG. 5, for example, the second opening O2013 is provided on the inner bottom surface S2 of the cavity 201 for introducing the gas G into the accommodating space 22 of the cavity 201 .

The range of the shielding member 204 that shields the inner surface S of the cavity 201 is not limited. For example, the shielding member 204 of FIG. 2 shields part of the inner wall surface S1 and most of the inner bottom surface S2, or the shielding member 204 of FIG. 7 shields most of the inner wall surface. S1 and part of the inner bottom surface S2. The gas G can be introduced between the shield 204 and the inner bottom surface S2 and the inner wall surface S1 of the cavity 201 through the air inlet O2012, and a positive pressure is created in the partial accommodation space 22 of the cavity 201 (for example, the cavity 201 The left and right sides), the auxiliary precursor P1 is drawn out of the cavity 201 through the air suction port 203, and the adhesion of the precursor P1 to the inner surface S of the cavity 201 shielded by the shielding member 204 is reduced.

Please refer to FIG. 8 in conjunction with FIG. 2 to understand the atomic layer deposition process method using the atomic layer deposition apparatus 2 of the present invention. FIG. 8 is a step flow chart of the atomic layer deposition process according to still another embodiment of the present invention.

In step S801, the precursor P1 is transferred to the accommodating space 22 of the cavity 201 to react with the substrate W, and the gas G is delivered between the inner surface S of the cavity 201 and the shielding member 204 through the air inlet O2012, so that The gas G diffuses into the gap G1 between the shield 204 and the cavity 201, and diffuses to the accommodating space 22 of the cavity 201 through the gap G1, and the cavity 201 is evacuated through the gas extraction port 203, where the gas G can be A part of the accommodating space 22 of the cavity 201 forms an air wall and/or positive pressure to assist the air extraction port 203 to extract the remaining precursor P1.

Specifically, in the present invention, gas is introduced between the first precursor block 204 and a part of the inner surface S of the cavity 201. Taking FIG. 2 as an example, the lower part of the carrying device 202 and the cavity 201 can be improved. The gas pressure of the second accommodating space 223 between the inner surfaces S can thereby reduce the entry of the precursor P1 into the second accommodating space 223. Therefore, the input of the precursor P1, the input of the gas G through the air inlet O2012, and the extraction of the remaining precursor P1 through the air outlet 203 do not have a certain sequence. In practical applications, the gas G can be input through the air inlet O2012 first, and the air can be pumped through the air extraction port 203, and then the precursor P1 can be input. Of course, the above three steps can also be performed at the same time.

Next, in step S802, after the precursor P1 is provided in the amount required for the process, the transmission of the precursor P1 to the cavity 201 can be stopped. At this time, the gas inlet O2012 will continue to input gas G to the inner surface S of the cavity 201 and shield Between the components 204, the cavity 201 is continuously pumped through the suction port 203, so that the unreacted precursor is evacuated from the cavity 201 through the suction port 203.

The atomic layer deposition process method may further include the cleaning process of the atomic layer deposition equipment. After a certain period of time in the atomic layer deposition process (ie, when the atomic layer deposition equipment is about to be cleaned), the shielding member 204 can be removed, and the cleaned or new shielding member 204 can be installed in the cavity 201. Similarly, the stopper 205 in FIG. 5 can also be removed, and a new stopper 205 can be installed in the cavity 201 after cleaning (not limited to the cleaning after removal) or a new one. In this way, by directly replacing the clean shielding member 204 and the blocking member 205, the cleaning efficiency can be effectively improved, thereby increasing the production capacity of products.

The use of the new type of atomic layer deposition equipment does not affect the effect of atomic layer deposition. Please see Table 1. Table 1 records the thickness and uniformity of the substrate in the atomic layer deposition process. As shown in Table 1, after the substrate is deposited using the new type of atomic layer deposition equipment, the uniformity of the substrate (U% ) Is 0.407.

Average thickness of substrate 121.97nm Substrate uniformity% 0.407 Table 1

Finally, the advantages of the new type of atomic layer deposition equipment will be explained. When the remaining precursor P1 is affected by the gas pressure formed by the gas G, most of the unreacted precursor P1 is evacuated from the gas extraction port 203, only a small part The remaining precursor P1 is attached to the shielding member 204 instead of directly attached to the inner surface S of the cavity 201, such as the inner bottom surface S2 and/or the inner wall surface S1. Since the residual precursors remaining in the cavity are reduced, the period of cleaning the cavity 201 can be prolonged. Furthermore, when cleaning the atomic layer deposition equipment, the shielding member 204 can be directly replaced or the shielding member 204 can be removed to clean it (in one embodiment, the shielding member 205 can also be directly replaced or cleaned). The cleaning effect and efficiency are improved, and the situation of dirt remaining in the cavity 201 can be reduced. The new type of atomic layer deposition equipment can not only extend the life of each component in the atomic layer deposition equipment, but also improve the product yield and productivity.

In summary, compared with the conventional technology, the technical effects of the atomic layer deposition equipment of the present new embodiment are described as follows.

In the conventional technology, the unreacted precursors left by the atomic layer deposition process often adhere to the cavity wall, causing problems such as difficult or incomplete cleaning, short cleaning cycle, and affecting product yield. On the other hand, the new type of atomic layer deposition equipment is achieved by creating local gas pressure and using the suction port to extract most of the remaining precursors, and blocking the remaining precursors through the shielding member so that they do not adhere to the cavity wall, and can be cleaned It provides the advantages of simple replacement to improve cleaning efficiency and effect, thereby optimizing product yield and increasing productivity.

The present invention has been disclosed in preferred embodiments above. However, those familiar with the art should understand that the above-mentioned embodiments are only used to describe the present invention and should not be interpreted as limiting the scope of the present invention. It should be noted that all changes and substitutions equivalent to the foregoing embodiments should be included in the scope of the present invention.

1: Cavity 101: inner wall 102: inner bottom surface 103: The adjacent area between the bottom of the cavity and the bottom of the carrying device 2, 2’, 2”: Atomic layer deposition equipment 201: Cavity 202, 202’, S0: Carrier device 203: Exhaust Port 203’: Hollow part 204, 204’: cover 2041: The first shield 2042: second shield 205: stop 206: print head 206’: Precursor air inlet 22: accommodating space 221: first housing space 223: second accommodation space d1: first channel d2: second channel G: Gas G1: gap G2: gap H204: Lateral extension H205: bottom O101: Bottom suction port O2012: Air intake O2013: second opening O2013’: Second suction port O2031: Exhaust port O2032: Top opening O204’: Inlet O2041’: Passage P1: Precursor p205: Upper suction path S: inner surface S1: inner wall S2: inner bottom surface S3: inner top surface V204: Longitudinal extension V205: Ring-shaped protrusion W: Substrate

Fig. 1 is a schematic diagram of a conventional atomic layer deposition apparatus.

Fig. 2 is a schematic diagram of an atomic layer deposition apparatus according to an embodiment of the present invention.

Fig. 3 is a three-dimensional schematic diagram of the shielding member of the embodiment of the present invention.

Fig. 4 is a three-dimensional schematic diagram of a shielding member according to another embodiment of the present invention.

Fig. 5 is a schematic diagram of an atomic layer deposition apparatus according to another embodiment of the present invention.

Fig. 6 is a schematic top view of a stopper according to another embodiment of the present invention.

Fig. 7 is a schematic diagram of an atomic layer deposition apparatus according to another embodiment of the present invention.

FIG. 8 is a flow chart of the steps of the atomic layer deposition process according to still another embodiment of the present invention.

2: Atomic layer deposition equipment

201: Cavity

202: Carrier device

203: Exhaust Port

204: Shading

2041: The first shield

2042: second shield

206: print head

22: accommodating space

221: first housing space

223: second accommodation space

d1: first channel

d2: second channel

G: Gas

G1: gap

G2: gap

H204: Lateral extension

O2012: Air intake

P1: Precursor

p205: Upper suction path

S: inner surface

S1: inner wall

S2: inner bottom surface

S3: inner top surface

V204: Longitudinal extension

W: Substrate

Claims (10)

An atomic layer deposition equipment that can reduce the deposition of precursors, including: A cavity including an inner surface for defining an accommodating space, and the inner surface also includes an inner top surface; A carrying device arranged in the accommodating space of the cavity and used for carrying at least one substrate; At least one air extraction port located on the inner top surface and fluidly connected to the accommodating space of the cavity for extracting at least one precursor in the accommodating space of the cavity; A shielding member is disposed in the accommodating space of the cavity and shields part of the inner surface of the cavity, and there is a gap between the shielding member and the inner surface of the cavity, and the gap is connected to the cavity Home space At least one air inlet is located on the inner surface of the cavity, and the shielding member shields the air inlet, and the air inlet is used to introduce a gas between the shielding member and the inner surface of the cavity such that The gas diffuses into the gap between the shield and the cavity, and diffuses to the accommodating space of the cavity through the gap; and A precursor air inlet is located on the inner top surface and is fluidly connected to the accommodating space of the cavity for transferring the precursor to the accommodating space of the cavity. The atomic layer deposition apparatus capable of reducing precursor deposition according to claim 1, wherein the inner surface includes an inner wall surface and an inner bottom surface, and the shielding member shields part of the inner wall surface and part of the inner bottom surface of the cavity , And the gas is introduced through the air inlet and diffuses to the gap between the shielding member and the inner wall surface of the cavity, and diffuses to the space between the shielding member and the inner bottom surface and the inner wall surface The gap diffuses to the accommodating space of the cavity through the gap. The atomic layer deposition equipment capable of reducing the deposition of precursors as described in claim 2, further comprising at least one second exhaust port located on the inner bottom surface of the cavity and fluidly connected to the accommodating space of the cavity for drawing out The gas or the at least one precursor in the accommodating space of the cavity. The atomic layer deposition equipment capable of reducing the deposition of precursors as described in claim 1, further comprising at least one hollow part, the suction port is located in the hollow part, and the position of the hollow part is higher than the carrying device. According to claim 4, the atomic layer deposition apparatus capable of reducing the deposition of precursors further includes a stopper located below the hollow part, and an upper suction path is formed between the stopper and the suction port of the hollow part. The atomic layer deposition apparatus capable of reducing the deposition of precursors according to claim 5, wherein the stopper has a bottom and at least one annular protrusion, and the annular protrusion is disposed on a surface of the bottom, and The bottom of the block is connected to the carrying device. The atomic layer deposition apparatus capable of reducing the deposition of precursors according to claim 1, wherein the shielding member further includes a feed port, the substrate is transported into the cavity through the feed port, and the gas is also introduced into the inlet Between the material opening and the inner surface of the cavity. The atomic layer deposition apparatus capable of reducing the deposition of precursors according to claim 7, wherein the shielding member further includes at least one channel, which is in fluid communication with the feed port, and the gas introduced into the gas inlet is transported to through the channel The feed port is used to prevent the precursor from entering the feed port of the shielding member. The atomic layer deposition apparatus capable of reducing the deposition of precursors as described in claim 1, wherein the gas does not react with the precursors. The atomic layer deposition apparatus capable of reducing the deposition of precursors as described in claim 1, further comprising at least one second opening located on the inner bottom surface of the cavity, and the gas is introduced into the accommodation of the cavity through the second opening space.

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