KR100899222B1 - Shower head and vapor deposition apparatus employing the same - Google Patents

Shower head and vapor deposition apparatus employing the same Download PDF

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KR100899222B1
KR100899222B1 KR1020070048099A KR20070048099A KR100899222B1 KR 100899222 B1 KR100899222 B1 KR 100899222B1 KR 1020070048099 A KR1020070048099 A KR 1020070048099A KR 20070048099 A KR20070048099 A KR 20070048099A KR 100899222 B1 KR100899222 B1 KR 100899222B1
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shower head
injection
diameter
hole
deposition apparatus
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KR1020070048099A
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Korean (ko)
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KR20080101942A (en
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송성태
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주식회사 마이크로텍
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45559—Diffusion of reactive gas to substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

본 발명은 샤워헤드, 및 이를 채용한 증착장치에 관한 것으로서, 대상물의 표면에 각종 분사가스를 분사하기 위해서 노즐 기능을 하는 다수개의 분사홀이 형성되고, 분사홀 내부에 분사가스를 확산시키기 위하여 형성된 미세홀이 형성된 샤워헤드에 있어서, 상기 샤워헤드의 변부에 형성된 분사홀 내부 미세홀의 직경이 모서리부에 형성된 분사홀 내부 미세홀의 직경보다 크고, 중앙부에 형성된 분사홀 내부 분사홀의 직경보다 작도록 형성된 샤워헤드 및 이러한 구성을 갖는 샤워헤드를 포함하는 증착장치를 제공하며, 상기와 같이 구성된 본 발명에 의하면, 수차례 재사용하더라도 분사가스의 확산이 고르게 유지될 수 있으므로, 샤워헤드의 재사용 회수가 1회 내지 3회로 한정되지 않고 그 이상 재사용할 수 있을 뿐만 아니라 LCD의 제작비용을 절감할 수 있어 경제성이 높다는 이점이 있다.The present invention relates to a shower head, and a deposition apparatus employing the same, wherein a plurality of injection holes are formed to function as nozzles for injecting various injection gases onto a surface of an object, and are formed to diffuse the injection gas into the injection holes. In the shower head having a fine hole, the diameter of the injection hole inside the hole formed in the edge of the shower head has a diameter larger than the diameter of the injection hole inside the hole formed in the corner portion, the shower formed to be smaller than the diameter of the injection hole inside the hole formed in the central portion Provided is a deposition apparatus including a head and a shower head having such a configuration, and according to the present invention configured as described above, since the diffusion of the injection gas can be maintained evenly even if reused several times, the number of reuse of the shower head is one to Not only can it be reused more than three times, it also reduces the manufacturing cost of LCD. It has the advantage of high economic efficiency.

LCD, 샤워헤드, 분사홀, 피막층 LCD, shower head, spray hole, film layer

Description

샤워헤드 및 이를 채용한 증착장치{SHOWER HEAD AND VAPOR DEPOSITION APPARATUS EMPLOYING THE SAME}Shower head and evaporation apparatus employing the same {SHOWER HEAD AND VAPOR DEPOSITION APPARATUS EMPLOYING THE SAME}

도 1은 종래의 알루미늄 샤워헤드의 일예를 나타낸 단면도, 1 is a cross-sectional view showing an example of a conventional aluminum shower head,

도 2는 도 1의 A 부분의 확대도, 2 is an enlarged view of a portion A of FIG. 1;

도 3은 도 1의 B-B 단면도, 3 is a cross-sectional view taken along line B-B of FIG.

도 4는 본 발명의 실시예에 의한 플라즈마 화학기상 증착 장비의 구성을 개략적으로 나타낸 구성도, 4 is a schematic view showing the configuration of a plasma chemical vapor deposition apparatus according to an embodiment of the present invention,

도 5는 도 4의 C-C 단면도, 5 is a cross-sectional view taken along line C-C of FIG.

<도면의 주요 부분에 대한 부호의 설명><Explanation of symbols for the main parts of the drawings>

2:상측홀 4:미세홀2: upper hole 4: micro hole

6:하측홀 8:분사구6: lower hall 8: nozzle

10:분사홀 20:샤워헤드10: spraying hole 20: shower head

170:샤워헤드 a:중앙부170: Shower head a: Center part

b:변부 c:모서리부b: edge c: edge

h1, h2, h3:미세홀 170h:분사홀h1, h2, h3: Fine hole 170h: Injection hole

본 발명은 샤워헤드 및 이를 채용한 증착장치에 관한 것으로서, 보다 상세하게는 대상물의 표면에 각종 분사가스를 분사하기 위한 다수개의 분사홀이 형성되며, 외부표면 및 분사홀의 표면에 피막처리에 의한 피막층이 형성된 샤워헤드 및 이를 채용한 증착장치에 관한 것이다.The present invention relates to a shower head and a deposition apparatus employing the same, and more particularly, a plurality of injection holes for injecting various injection gases are formed on the surface of an object, and the coating layer is formed on the outer surface and the surface of the injection hole by coating. The formed shower head and a deposition apparatus employing the same.

일반적으로, 샤워헤드는 대략 판상의 본체부에 노즐 기능을 하는 다수개의 분사홀이 형성되어 각종 분사가스를 대상물의 표면에 분사하는 제품으로서, LCD(liquid crystal display) 분야의 각종 증착 또는 에칭 공정에 사용되고 있다. In general, the shower head is a product in which a plurality of injection holes, which function as nozzles, are formed on a substantially plate-shaped main body to inject various injection gases onto the surface of an object. It is used.

이러한 샤워헤드는 예를 들어, LCD 제조공정장비 중 PE-CVD(Plasma Enhanced - Chemical Vapor Deposition)에 설치되어 LCD 글래스 기판 상에 박막을 형성시키기 위한 용도로 사용된다.Such a shower head is installed in, for example, a plasma enhanced-chemical vapor deposition (PE-CVD) device in an LCD manufacturing process, and is used for forming a thin film on an LCD glass substrate.

샤워헤드의 재질로서는 분사가스와의 반응성, 가공성 등을 고려하여 통상적으로 알루미늄이 사용되는바, 표면 산화가 쉽게 이뤄진다는 알루미늄 재질의 특성으로 인해 알루미늄 샤워헤드에는 기계가공의 완료 후에 양극산화처리(anodizing)와 같은 피막처리를 통해 소정 두께의 피막층을 형성시키고 있다. 이러한 피막층은 알루미늄 샤워헤드의 내식성과 내마모성을 높이는 효과를 제공하게 된다.As the material of the shower head, aluminum is generally used in consideration of the reactivity with the spraying gas and workability. The aluminum shower head is anodized after completion of machining due to the characteristic of the aluminum material that the surface oxidation is easily performed. A coating layer having a predetermined thickness is formed through a coating treatment such as). This coating layer provides the effect of increasing the corrosion resistance and wear resistance of the aluminum showerhead.

도 1은 종래의 알루미늄 샤워헤드의 일예를 나타낸 단면도, 도 2는 도 1의 A 부분의 확대도로서, 예시된 샤워헤드(20)에는, 분사가스를 고르게 흘려주기 위한 분사홀(10)이 형성되며, 이러한 분사홀(10)은 분사가스가 유입되는 상측홀(2), 분사가스를 확산시키기 위한 미세홀(4), 분사가스를 분사구로 유도하기 위한 하측홀(6), 그리고 분사가스를 분사시키는 분사구(8)로 이루어진다.1 is a cross-sectional view showing an example of a conventional aluminum shower head, Figure 2 is an enlarged view of a portion A of Figure 1, in the shower head 20 illustrated, the injection hole 10 for evenly flowing the injection gas is formed The injection hole 10 includes an upper hole 2 through which injection gas is introduced, a fine hole 4 for diffusing the injection gas, a lower hole 6 for guiding the injection gas to the injection hole, and an injection gas. It consists of the injection port 8 which injects.

샤워헤드(20)에 형성된 분사홀(10)은, 도 3에 도시된 바와 같이, 동일한 직경으로 형성되어 일정하게 배열되도록 형성되며, 지속적으로 분사가스를 분사하게 된다.The injection hole 10 formed in the shower head 20, as shown in Figure 3, is formed to be the same diameter and are arranged to be constant, and to continuously spray the injection gas.

이처럼 지속적으로 분사홀(10)을 통해 분사가스를 분사하게 되면, 샤워헤드(20)의 분사홀(10), 특히 미세홀(4)에 형성된 피막층의 두께가 점차 얇아지게 되고, 이에 따라 샤워헤드(20)를 계속 사용하기 위해서는 분사홀(10), 특히 미세홀(4)에 피막층을 재차 형성해야만 한다.When the injection gas is continuously injected through the injection hole 10 as described above, the thickness of the coating layer formed in the injection hole 10, in particular, the fine hole 4 of the shower head 20 becomes gradually thinner, and thus the shower head In order to continue using (20), the coating layer must be formed in the injection hole 10, especially the microhole 4 again.

샤워헤드(20)의 미세홀(4)에 피막층을 재차 형성하는 방법으로는 잔존하는 피막층을 기계가공 등의 방법으로 제거한 후 재차 양극산화처리하는 방법이 있으며, 이와 같은 방법으로 피막층을 재차 형성하게 되면 분사홀(10), 특히 미세홀(4)의 직경은 양극산화처리 시의 침식으로 인하여 초기상태보다 커지게 된다.As a method of forming the coating layer again in the microholes 4 of the shower head 20, there is a method of removing the remaining coating layer by a method such as machining and then anodizing it again. In this manner, the coating layer is formed again. In this case, the diameter of the injection hole 10, in particular the fine hole 4, becomes larger than the initial state due to erosion during anodization.

특히, 도 3에 도시된 바와 같이, 장방형의 샤워헤드(20)를 양극산화처리하는 경우에 미세홀(4)의 침식되는 정도는, 모서리부의 미세홀(4c)이 가장 크고, 다음으로 변부의 미세홀(4b), 중앙부의 미세홀(4a) 순서로 나타났으며, 표 1에서와 같이 모서리부의 미세홀(4c)의 직경과 중앙부의 미세홀(4a)의 직경의 차이는 샤워헤드의 재사용함에 따른 양극산화처리 회수에 따라 점차 커지게 되었다.In particular, as shown in FIG. 3, in the case of anodizing the rectangular shower head 20, the degree of erosion of the microholes 4 is the largest in the corners of the microholes 4c, and then the edges of the microholes 4. The microholes 4b and the central microholes 4a appear in the order. As shown in Table 1, the difference between the diameters of the microholes 4c in the corners and the diameters of the microholes 4a in the centers is used to reuse the shower head. As the number of anodizations increased,

< 표 1 ><Table 1>

중앙부Center 변부Stools 모서리edge 편차Deviation 초기 가공Early processing 0.450mm0.450mm 0.450mm0.450mm 0.450mm0.450mm -- 1회 재사용1 time reuse 0.455mm0.455 mm 0.460mm0.460mm 0.465mm0.465 mm 0.010mm0.010mm 2회 재사용2 reuse 0.460mm0.460mm 0.470mm0.470mm 0.480mm0.480mm 0.020mm0.020mm 3회 재사용3 times reuse 0.465mm0.465 mm 0.480mm0.480mm 0.495mm0.495 mm 0.030mm0.030mm 4회 재사용4 reuse 0.470mm0.470mm 0.490mm0.490mm 0.510mm0.510mm 0.040mm0.040mm

이와 같은 이유로 샤워헤드(20)의 재사용 회수는 1회 내지 3회로 한정되며, 그 이상 재사용하면 모서리부의 미세홀(4c)의 직경과 중앙부의 미세홀(4a)의 직경의 차이가 너무 커져서 분사가스의 확산이 고르게 이루어지지 못하여 LCD의 불량을 초래한다는 문제점이 있다.For this reason, the number of reuse of the shower head 20 is limited to one to three times, and if it is reused more than that, the difference between the diameter of the fine hole 4c in the corner portion and the diameter of the fine hole 4a in the center portion becomes too large. There is a problem in that the diffusion of is not made evenly to cause a defect of the LCD.

본 발명은 상기와 같은 문제점을 감안하여 안출한 것으로서, 분사가스의 확산이 고르게 유지된 상태에서 수회에 걸쳐서 재사용이 가능한 샤워헤드 및 이를 채용한 증착장치를 제공하는 것을 그 목적으로 한다.The present invention has been made in view of the above problems, and an object of the present invention is to provide a shower head and a deposition apparatus employing the same, which can be reused for several times in a state where the diffusion of the injection gas is evenly maintained.

상기와 같은 목적을 달성하기 위해서, 대상물의 표면에 각종 분사가스를 분사하는 다수개의 분사홀이 형성되고, 분사홀 내부에 분사가스를 확산시키기 위하여 형성된 장방형의 샤워헤드로서, 상기 샤워헤드의 중앙부에 형성된 분사홀 내부 미세홀의 직경이 테두리부에 형성된 분사홀 내부 미세홀의 직경보다 큰 것을 특징으로 하는 샤워헤드를 제공한다. In order to achieve the above object, a plurality of injection holes for injecting a variety of injection gas is formed on the surface of the object, a rectangular shower head formed to diffuse the injection gas inside the injection hole, the central portion of the shower head Provided is a shower head characterized in that the diameter of the injection hole inside the fine hole is larger than the diameter of the injection hole inside the fine hole formed in the rim.

여기서, 상기 샤워헤드의 테두리부는 변부와 모서리부로 이루어지며, 상기 변부에 형성된 분사홀 내부 미세홀의 직경이 상기 모서리에 형성된 분사홀 내부 미세홀의 직경보다 크게 형성할 수 있다.Here, the edge portion of the shower head is formed of the edge portion and the corner portion, the diameter of the injection hole inside the micro hole formed in the edge portion may be formed larger than the diameter of the inside injection hole in the corner.

한편, 상기와 같은 목적을 달성하기 위해서, 상기와 같은 구성을 갖는 샤워 헤드를 포함하는 증착장치를 제공한다.On the other hand, in order to achieve the above object, it provides a deposition apparatus including a shower head having the configuration as described above.

이하, 첨부도면을 참조하여 본 발명의 실시예에 대하여 설명하도록 한다.Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.

본 발명의 실시예에 따른 샤워헤드를 포함하는 증착장치는, 액정표시장치를 제조하기 위한 장비이다.Deposition apparatus including a shower head according to an embodiment of the present invention is equipment for manufacturing a liquid crystal display device.

플라즈마 화학기상 증착 장비는 상부가 개방된 챔버용기(110)가 챔버덮개(120)에 의해 덮여지게 된다. 이에 따라, 챔버용기(110)와 챔버덮개(120)에 의해 외부와 차단된 반응공간이 형성된다. 또한, 반응공간의 효과적인 밀폐를 위해 챔버용기(110)와 챔버덮개(120) 사이에는 O-링(130)이 삽입되어 설치된다.Plasma chemical vapor deposition equipment is covered with a chamber cover 120, the chamber container 110 is open at the top. Accordingly, the reaction space is blocked by the chamber container 110 and the chamber cover 120 is formed outside. In addition, the O-ring 130 is inserted and installed between the chamber container 110 and the chamber cover 120 to effectively seal the reaction space.

그리고 반응공간 내에는 이송수단(142)에 의해 상하 이송이 가능하고 전기적으로 접지되는 서셉터(140)가 설치된다. 이때, 증착이 수행될 LCD기판(150)은 서셉터(140)의 상부에 안착되며, 서셉터(140)의 내부에는 LCD기판(150)을 가열시키기 위한 열선(144)이 장착된다.In the reaction space, a susceptor 140 capable of vertically moving and electrically grounded by the transfer means 142 is installed. In this case, the LCD substrate 150 on which deposition is to be performed is mounted on the susceptor 140, and a heating wire 144 is mounted inside the susceptor 140 to heat the LCD substrate 150.

한편, 서셉터(140)의 상부에 마련되는 반응공간에는 디퓨져바디(160)가 설치되고, 이 디퓨져바디(160)의 양측에 고정수단에 의해 샤워헤드(170)가 고정설치되며, 디퓨져바디(160)와 샤워헤드(170)에 의해서 반응가스 수용공간이 형성된다.On the other hand, the diffuser body 160 is installed in the reaction space provided on the susceptor 140, the shower head 170 is fixed to both sides of the diffuser body 160 by the fixing means, the diffuser body ( The reaction gas accommodating space is formed by the 160 and the shower head 170.

디퓨져바디(160)로부터 연장형성된 기체 주입관(160a)은 반응가스 수용공간과 연통되며, 샤워헤드(170)에는 미세한 직경을 가지는 복수의 분사구멍(170h)이 일정간격으로 형성되어 있다.The gas injection pipe 160a extending from the diffuser body 160 communicates with the reaction gas accommodation space, and the shower head 170 has a plurality of injection holes 170h having a small diameter at regular intervals.

이에 따라, 기체 주입관(160a)를 통해 반응가스 수용공간으로 주입된 기체는 분사홀(170h)을 통하여 반응공간으로 분사되며, 반응공간으로 분사된 기체는 LCD기판에 증착되고, 잉여 반응가스는 기체 배기관(180)을 통하여 배기된다.Accordingly, the gas injected into the reaction gas accommodating space through the gas injection tube 160a is injected into the reaction space through the injection hole 170h, and the gas injected into the reaction space is deposited on the LCD substrate, and the surplus reaction gas is It is exhausted through the gas exhaust pipe 180.

또한, 챔버용기(110)의 측벽에는 로드락부(미도시)와 반응공간과의 연통 여부를 결정하는 슬롯밸브(190)가 설치되어 있으며, 로드락부로부터 서셉터(140)의 상부로 LCD기판(150)을 이송시키기 위해서는 슬롯밸브(190)를 열어야 한다.In addition, the side wall of the chamber container 110 is provided with a slot valve 190 for determining the communication between the load lock portion (not shown) and the reaction space, the LCD substrate (from the load lock portion to the top of the susceptor 140) In order to transfer 150, the slot valve 190 must be opened.

도 5는 도 4의 C-C단면도로 상술한 플라즈마 화학기상 증착 장비 내에 설치되는 샤워헤드(170)를 나타낸 도면이며, 도 5를 참조하여 본 실시예의 샤워헤드에 대하여 설명하면 다음과 같다.FIG. 5 is a view illustrating a showerhead 170 installed in the above-described plasma chemical vapor deposition apparatus in the C-C cross-sectional view of FIG. 4. Referring to FIG. 5, the showerhead of this embodiment will be described below.

도 5에 도시된 바와 같이, 본 실시예의 샤워헤드(170)는 각각 이점쇄선으로 3획된 중앙부(a), 변부(b) 및 모서리부(c)로 구분될 수 있으며, 각 부(a, b, c)에는 다수의 분사홀(170h1, 170h2, 170h3)이 형성된다.As shown in FIG. 5, the showerhead 170 of the present embodiment may be divided into a center portion (a), a side portion (b), and a corner portion (c), each of which is triangulated by two-dot chain lines, and each portion (a, b). , c) a plurality of injection holes (170h1, 170h2, 170h3) are formed.

모서리부(c)에 형성된 미세홀(h3)의 직경보다 변부(b)에 형성된 미세홀(h2)의 직경이 더 크고, 변부(b)에 형성된 미세홀(h2)의 직경보다 중앙부(a)에 형성된 미세홀(h1)의 직경이 더 크도록 형성된다.The diameter of the fine hole h2 formed in the edge portion b is greater than the diameter of the fine hole h3 formed in the edge portion c, and the central portion a is larger than the diameter of the fine hole h2 formed in the edge portion b. It is formed so that the diameter of the fine hole (h1) formed in the larger.

삭제delete

한편, 도 5에서와 같이, 장방형의 샤워헤드(170)를 재가공 후 양극산화처리하는 경우, 경험적으로 샤워헤드(170)의 미세홀(h1, h2, h3)의 직경이 커지는 정도는 모서리부(c)가 가장 크고, 다음으로 변부(b), 중앙부(a)의 순서 나타났으므로, 상술한 바와 같이, 모서리부(c)에 형성된 미세홀(h3)의 직경보다 변부(b)에 형성된 미세홀(h2)의 직경이 더 크고, 변부(b)에 형성된 미세홀(h2)의 직경보다 중앙부(a)에 형성된 미세홀(h1)의 직경이 더 크도록 형성된 샤워헤드(170)를 여러 번에 걸쳐서 양극산화처리하면, 표 2에 기재된 바와 같이, 중앙부(a)의 미세홀(h1) 직경이 커진 정도보다 모서리부(c)의 미세홀(h3) 직경이 커진 정도가 더 크게 된다.On the other hand, as shown in Figure 5, when the rectangular showerhead 170 is reprocessed and anodized, the diameter of the microholes h1, h2, h3 of the showerhead 170 is empirically increased by the corner portion ( c) is the largest, and the order of the edge portion b and the center portion a is shown next. Therefore, as described above, the fine portion formed in the edge portion b is larger than the diameter of the fine hole h3 formed in the edge portion c. The shower head 170 formed to have a larger diameter of the hole h2 and larger than the diameter of the fine hole h2 formed in the edge portion b has a larger diameter of the fine hole h1 formed in the central portion a. When anodizing is over, as shown in Table 2, the diameter of the fine hole h3 of the edge part c becomes larger than the diameter of the fine hole h1 of the center part a becomes larger.

< 표 2 ><Table 2>

중앙부Center 변부Stools 모서리edge 편차Deviation 초기 가공Early processing 0.435mm0.435mm 0.415mm0.415mm 0.400mm0.400mm 0.035mm0.035mm 1회 재사용1 time reuse 0.440mm0.440mm 0.425mm0.425mm 0.415mm0.415mm 0.025mm0.025mm 2회 재사용2 reuse 0.445mm0.445mm 0.435mm0.435mm 0.430mm0.430mm 0.015mm0.015mm 3회 재사용3 times reuse 0.450mm0.450mm 0.445mm0.445mm 0.445mm0.445mm 0.005mm0.005mm 4회 재사용4 reuse 0.455mm0.455 mm 0.455mm0.455 mm 0.460mm0.460mm 0.005mm0.005mm 5회 재사용5 re-use 0.460mm0.460mm 0.465mm0.465 mm 0.475mm0.475 mm 0.015mm0.015mm 6회 재사용6 re-use 0.465mm0.465 mm 0.475mm0.475 mm 0.490mm0.490mm 0.025mm0.025mm 7회 재사용Reuse 7 times 0.470mm0.470mm 0.485mm0.485 mm 0.505mm0.505mm 0.035mm0.035mm

즉, 표 2에 기재된 바와 같이, 초기 가공된 샤워헤드(170)의 모서리부(c)에 형성된 미세홀(h3)의 직경이 0.400mm이고 중앙부(a)에 형성된 미세홀(h1)의 직경이 0.435mm인 경우에 편차는 0.035mm이고, 3회 재사용을 위해 3차 양극산화처리 후에는 모서리부(c)에 형성된 미세홀(h3)의 직경이 0.445mm 이고 중앙부(a)에 형성된 미세홀(h1)의 직경이 0.450mm이 되어 편차는 0.005mm가 된다.That is, as shown in Table 2, the diameter of the fine hole (h3) formed in the corner portion (c) of the initially processed shower head 170 is 0.400mm and the diameter of the fine hole (h1) formed in the central portion (a) is In the case of 0.435mm, the deviation is 0.035mm, and after the third anodization treatment for the third reuse, the diameter of the fine hole h3 formed in the corner portion c is 0.445mm and the fine hole formed in the center portion a The diameter of h1) is 0.450 mm, and the deviation is 0.005 mm.

또한, 7회 재사용을 위해 7차 양극산화처리 후에는 모서리부(c)에 형성된 미세홀(h3)의 직경이 0.505mm 이고 중앙부(a)에 형성된 미세홀(h1)의 직경이 0.470mm이 되어 편차는 0.035mm가 되어, 초기 가공된 샤워헤드의 모서리부(c)의 미세홀과 중앙부(a)의 미세홀의 편차와 유사하게 된다.In addition, after the seventh anodic oxidation treatment for reuse 7 times, the diameter of the fine hole (h3) formed in the corner portion (c) is 0.505mm and the diameter of the fine hole (h1) formed in the central portion (a) becomes 0.470mm The deviation is 0.035 mm, which is similar to the deviation between the microholes in the corner portion c of the shower head initially processed and the microholes in the center portion a.

상술한 바와 같이, 모서리부(c)의 미세홀(h3)의 직경과 중앙부(a)의 미세 홀(h1)의 직경의 차이는, 샤워헤드(170)의 재사용에 따른 다수 회수의 양극산화처리를 하더라도 일정한 범위 내에 존재하게 되므로, 샤워헤드(170)를 다수 회수 재사용하더라도 분사가스의 확산이 고르게 이루어질 수 있다.As described above, the difference between the diameter of the fine hole h3 of the corner portion c and the diameter of the fine hole h1 of the central portion a is determined by a large number of times of anodizing due to the reuse of the shower head 170. Even if it is present in a certain range, even if the shower head 170 is recovered and reused a number of times can be evenly spread the injection gas.

즉, 피막층을 재차 형성하기 재가공 후 양극산화처리함에 따라 모서리부(c)의 미세홀(h3)의 직경과 중앙부(a)의 미세홀(h1)의 직경의 차이가 분사가스의 확산이 고르게 이루어질 수 있는 일정한 범위 내에 존재하므로, 수차례에 걸쳐 샤워헤드를 재사용할 수 있다는 이점이 있다.That is, the difference between the diameter of the fine hole h3 of the corner part c and the diameter of the fine hole h1 of the central part a makes the diffusion of the injection gas even after anodizing after reprocessing to form the coating layer again. Since it exists within a certain range, there is an advantage that the showerhead can be reused several times.

이상 설명한 본 발명은 그 기술적 사상 또는 주요한 특징으로부터 벗어남이 없이 다른 여러 가지 형태로 실시될 수 있다. 따라서, 상기 실시예는 모든 점에서 단순한 예시에 지나지 않으며 한정적으로 해석되어서는 안 된다.The present invention described above can be embodied in many other forms without departing from the spirit or main features thereof. Therefore, the above embodiments are merely examples in all respects and should not be interpreted limitedly.

상기와 같이 구성된 본 발명에 의하면, 샤워헤드의 재사용 회수가 1회 또는 2회로 한정되지 않고, 그 이상 재사용할 수 있다는 이점이 있다.According to the present invention configured as described above, the number of reuse of the showerhead is not limited to one or two times, and there is an advantage that it can be reused more than that.

또한, 여러번에 걸쳐 재사용할 수 있으므로, LCD의 제작비용을 절감할 수 있어 경제성이 높다는 이점이 있다.In addition, since it can be reused many times, it is possible to reduce the manufacturing cost of the LCD has the advantage of high economic efficiency.

Claims (3)

대상물의 표면에 각종 분사가스를 분사하는 다수개의 분사홀이 형성되고, 분사홀 내부에 분사가스를 확산시키기 위하여 형성된 미세홀이 형성된 장방형의 샤워헤드에 있어서, In the rectangular shower head formed with a plurality of injection holes for injecting various injection gases on the surface of the object, the fine hole formed to diffuse the injection gas in the injection hole, 상기 샤워헤드의 중앙부에 형성된 분사홀 내부 미세홀의 직경이 테두리부에 형성된 분사홀 내부 미세홀의 직경보다 큰 것을 특징으로 하는 샤워헤드.The shower head, characterized in that the diameter of the injection hole inside the fine hole formed in the center of the shower head is larger than the diameter of the injection hole inside the fine hole formed in the edge portion. 제1항에 있어서, The method of claim 1, 상기 샤워헤드의 테두리부는 변부와 모서리부로 이루어지며, The edge portion of the shower head is composed of a side portion and a corner portion, 상기 변부에 형성된 분사홀 내부 미세홀의 직경이 상기 모서리부에 형성된 분사홀 내부 미세홀의 직경보다 큰 것을 특징으로 하는 샤워헤드.The diameter of the injection hole inside the hole formed in the edge portion is larger than the diameter of the injection hole inside the hole formed in the corner portion. 제 1 항 또는 제 2 항에 기재된 구성을 갖는 샤워헤드를 포함하는 것을 특징으로 하는 증착장치.A vapor deposition apparatus comprising a showerhead having the configuration according to claim 1.
KR1020070048099A 2007-05-17 2007-05-17 Shower head and vapor deposition apparatus employing the same KR100899222B1 (en)

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JPH09283498A (en) * 1996-04-10 1997-10-31 Tokyo Electron Ltd Vacuum treatment device
JPH10204643A (en) * 1997-01-27 1998-08-04 Shibaura Eng Works Co Ltd Vapor growth apparatus
KR100641840B1 (en) 2005-04-19 2006-11-03 (주)아이씨디 Shower head and Plasma processing apparatus adopting the same
KR100675277B1 (en) * 2004-08-18 2007-01-26 삼성전자주식회사 Shower head of semiconductor manufacturing apparatus

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09283498A (en) * 1996-04-10 1997-10-31 Tokyo Electron Ltd Vacuum treatment device
JPH10204643A (en) * 1997-01-27 1998-08-04 Shibaura Eng Works Co Ltd Vapor growth apparatus
KR100675277B1 (en) * 2004-08-18 2007-01-26 삼성전자주식회사 Shower head of semiconductor manufacturing apparatus
KR100641840B1 (en) 2005-04-19 2006-11-03 (주)아이씨디 Shower head and Plasma processing apparatus adopting the same

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