KR100242986B1 - Muffle structure of atmospheric chemical vapor deposition system - Google Patents
Muffle structure of atmospheric chemical vapor deposition system Download PDFInfo
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- KR100242986B1 KR100242986B1 KR1019960054366A KR19960054366A KR100242986B1 KR 100242986 B1 KR100242986 B1 KR 100242986B1 KR 1019960054366 A KR1019960054366 A KR 1019960054366A KR 19960054366 A KR19960054366 A KR 19960054366A KR 100242986 B1 KR100242986 B1 KR 100242986B1
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- muffle
- vapor deposition
- chemical vapor
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- 238000005229 chemical vapour deposition Methods 0.000 title abstract description 11
- 230000008021 deposition Effects 0.000 claims abstract description 8
- 235000012431 wafers Nutrition 0.000 claims abstract 2
- 239000000463 material Substances 0.000 claims description 2
- 238000004140 cleaning Methods 0.000 abstract description 15
- 238000009434 installation Methods 0.000 abstract description 9
- 238000005530 etching Methods 0.000 abstract description 8
- 238000000034 method Methods 0.000 abstract description 8
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 abstract description 7
- 238000000151 deposition Methods 0.000 abstract description 7
- 230000000694 effects Effects 0.000 abstract description 5
- 230000002950 deficient Effects 0.000 abstract description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 9
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000003670 easy-to-clean Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000005285 magnetism related processes and functions Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4407—Cleaning of reactor or reactor parts by using wet or mechanical methods
-
- H01L21/205—
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
본 발명은 상압화학기상증착장비의 머플 설치구조에 관한 것으로, 종래에는 챔버의 내측에 머플이 일체로 형성되어 있어서 세정이 용이하지 못한 문제점이 있었다. 본 발명 상압화학기상증착장치의 머플 설치구조는 챔버의 내측에 머플을 착.탈가능하도록 설치하고, 세정시 머플을 해체한 후 식각용액에 담가서 세정을 진행할 수 있도록 함으로서, 세정이 용이하고, 세정시간이 적게 소요되며, 또한 종래보다 세정효과가 뛰어나 세정불량에 의한 후공정에서 웨이퍼의 대량 증착불량을 방지하게 되는 효과가 있다.The present invention relates to a muffle installation structure of an atmospheric chemical vapor deposition apparatus. Conventionally, a muffle is integrally formed inside a chamber, so that cleaning is difficult. The muffle installation structure of the atmospheric pressure chemical vapor deposition apparatus of the present invention has a structure in which a muffle is installed on the inner side of the chamber so that the muffle is detachable and the muffle is disassembled upon rinsing and then immersed in the etching solution to perform rinsing, And the cleaning effect is more excellent than in the prior art, thereby preventing defective bulk deposition of wafers in a subsequent process due to defective cleaning.
Description
본 발명은 상압화학기상증착장비(APCVD)의 머플 설치구조에 관한 것으로, 특히 머플(MUFFLE)의 식각이 용이하고, 식각효과를 향상시키도록 하는데 적합한 상압화학기상증착장비의 머플 설치구조에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a muffle installation structure of an atmospheric chemical vapor deposition apparatus (APCVD), and more particularly, to a muffle installation structure of an atmospheric chemical vapor deposition apparatus suitable for etching of a muffle and improving etching effect .
제1도는 종래 상압화학기상증착장비의 내부구성을 보인 평면도로서, 챔버(CHAMBER)(1)의 내측에 다수개의 관통공(2a)이 구비된 3개의 머플(2)이 일정간격을 두고 설치되어 있고, 그 머플(2)의 상부로 웨이퍼(W)를 이동시키기 위한 벨트(BELT)(3)가 설치되어 있다.FIG. 1 is a plan view showing an internal configuration of a conventional atmospheric chemical vapor deposition apparatus. In FIG. 1, three muffles (2) having a plurality of through holes (2a) And a belt BELT 3 for moving the wafer W to the upper portion of the muffle 2 is provided.
제2도는 종래 상압화학기상증착장비에서 공정이 진행되는 동작을 보인 부분단면도로서, 상기 벨트(3)의 상면을 따라 웨이퍼(W)가 이동되어 머플(2)의 상부에 위치하면 인젝터(INJECTOR)(4)의 주변에 질소 커튼(N2CURTAIN)(5)이 형성되는 상태에서 인젝터(4)를 통하여 세퍼레이터 질소(SEPARATOR N2, 하이드라이드(HYDRIDE) 등을 분사하여 증착을 실시한다. 한편, 상기 머플(2)의 하부에서는 퍼지용 질소를 분사하여 머플(2)에 형성된 다수개의 관통공(2a)을 통하여 퍼지용 질소가 분사되어, 공정가스에 의하여 머플(2)에 증착이 발생하는 것을 저지한다.2 is a partial cross-sectional view showing the operation of the conventional atmospheric chemical vapor deposition apparatus. When the wafer W is moved along the upper surface of the belt 3 and positioned at the upper portion of the muffle 2, (SEPARATOR N 2 , HYDRIDE, etc.) is sprayed through the injector 4 in a state where a nitrogen curtain (N 2 CURTAIN) 5 is formed around the periphery of the nozzle 4, Nitrogen for purging is injected through the plurality of through holes 2a formed in the muffle 2 by spraying nitrogen for purging at the lower part of the muffle 2 and evaporation is generated in the muffle 2 by the process gas I will stop.
상기와 같이 장기간 반복하여 작업을 실시할 경우에 머플(2)에 증착이 발생하는데, 이때, 제3도와 같은 방법으로 세정작업을 실시하여 증착막을 제거한다.When the work is repeatedly performed for a long period of time as described above, evaporation occurs in the muffle 2. At this time, a cleaning operation is performed in the same manner as in the third method to remove the deposited film.
버블러(BUBBLER)6)에 HF를 수납한 상태에서 레귤레이터(REGULATOR)(7)가 설치된 주입라인(8)으로 질소를 공급하면 질소가스가 캐리어가스가 되어 HF를 각각의 공급라인(9)을 통하여 공급되는데, 이때 각각의 공급라인(9)으로 공급되는 HF는 벨트(3), 3개의 머플(2), 인젝터(4)를 식각하여 증착막을 제거한다.When nitrogen is supplied to the injection line 8 provided with the regulator 7 in the state where the HF is stored in the bubbler 6, nitrogen gas becomes a carrier gas and HF is supplied to each of the supply lines 9 At this time, the HF supplied to each supply line 9 etches the belt 3, the three muffles 2, and the injector 4 to remove the deposited film.
그러나, 상기와 같이 종래에는 머플(2)이 챔버(1)에 일체로 형성되어 있어서, 머플(2)을 세정하기 위해서 제3도와 같은 세정장비를 이용하여 증착장비의 전체를 세정하여야 하므로 번거로울뿐만 아니라, 시간이 많이 소요되는 문제점이 있었다. 또한 세정효과도 저조하여 머플(2)에 형성된 관통공(2a)이 막힌상태로 진행되어 자기공정에서 웨어퍼(W)에 형성되는 증착두께의 유니퍼머티(UNIFORMITY)가 불량한 상태를 초래하는 문제점이 있었으며, 그와 같은 증착두께의 불균일이 대량으로 발생되는 문제점이 있었다.However, since the conventional muffle 2 is formed integrally with the chamber 1 as described above, the entire cleaning apparatus for cleaning the muffle 2 needs to be cleaned using the same cleaning equipment as in the third embodiment, However, there was a time consuming problem. In addition, the cleaning effect is also poor and the through holes 2a formed in the muffle 2 are clogged to cause unfavorable unifferential of the deposition thickness formed in the wafer W in the magnetic process And there is a problem that a large amount of unevenness of the deposition thickness occurs.
본 발명의 주목적인 상기와 같은 여러 문제점을 갖지 않는 상압화학기상증착장비의 머플 설치구조를 제공함에 있다.The present invention provides a muffle installation structure of an atmospheric pressure chemical vapor deposition apparatus which does not have the above-mentioned various problems.
본 발명의 다른 목적은 머플의 세정이 용이하고, 세정시간을 절감할 수 있도록 하는데 적합한 상압화학기상증착장비의 머플 설치구조를 제공함에 있다.Another object of the present invention is to provide a muffle installation structure of an atmospheric chemical vapor deposition apparatus which is easy to clean the muffle and can reduce the cleaning time.
본 발명의 또다른 목적은 세정효과를 향상시켜서 차기공정에서 증착두께의 유니퍼머티를 향상시키도록 하는데 적합한 상압화학기상증착장비의 머플 설치구조를 제공함에 있다.It is still another object of the present invention to provide a muffle installation structure of an atmospheric chemical vapor deposition apparatus suitable for improving the cleaning effect so as to improve the unifferentiation of the deposition thickness in the next process.
제1도는 종래 상압화학기상증착장비의 내부구성을 보인 평면도.FIG. 1 is a plan view showing the internal construction of a conventional atmospheric chemical vapor deposition apparatus. FIG.
제2도는 종래 상압화학기상증착장비에서 증착이 진행되는 동작을 보인 부분단면도.FIG. 2 is a partial cross-sectional view showing the operation of deposition in the conventional atmospheric chemical vapor deposition apparatus. FIG.
제3도는 종래 상압화학기상증착장비의 에칭하는 방법을 설명하기 위한 배관도.FIG. 3 is a piping diagram for explaining a conventional etching method of an atmospheric chemical vapor deposition apparatus; FIG.
제4도는 본 발명 상압화학기상증착장비의 머플이 1개 설치된 상태를 보인 평면도 및 부분단면도.FIG. 4 is a plan view and partial cross-sectional view showing a state where one muffle of the atmospheric pressure chemical vapor deposition apparatus of the present invention is installed.
제5도는 본 발명의 머플을 에칭하기 위한 에칭용기를 보인 종단면도.FIG. 5 is a longitudinal sectional view showing an etching vessel for etching the muffle of the present invention. FIG.
* 도면의 주요부분에 대한 부호의 설명DESCRIPTION OF THE REFERENCE NUMERALS
11 : 챔버 12 : 머플11: chamber 12: muffle
12a : 조립공 13 : 체결수단12a: Assembly 13: Fastening means
14 : 플랜지 14a : 나사공14: flange 14a:
15 : 볼트15: Bolt
상기와 같은 본 발명의 목적을 달성하기 위하여 챔버의 내측에 수개의 머플이 구비되어 있고, 그 머플의 상측에는 웨어퍼를 이송할 수 있도록 벨트가 구비되어 있는 반도체 상압화학기상증착장비에 있어서, 상기 머플은 챔버에서 간단하게 해체할 수 있도록 볼트로 조립되어 있어서, 머플의 세정시 머플에 부착된 증착물질을 신속하고 확실하게 세정할 수 있도록 한 것을 특징으로 하는 상압화학기상증착장비의 머플 설치구조가 제공된다.In order to accomplish the object of the present invention, there is provided a semiconductor atmospheric pressure chemical vapor deposition apparatus having a plurality of muffles inside a chamber, and a belt for transporting a wafer at a top of the muffle, Wherein the muffle is assembled with a bolt so as to be easily disassembled in the chamber so that the deposition material adhered to the muffle can be quickly and reliably cleaned when the muffle is cleaned. / RTI >
이하, 상기와 같은 구성되는 본 발명 상압화학기상증착장비의 머플 설치구조를 첨부된 도면의 실시예를 참고하여 보다 상세히 설명하면 다음과 같다.Hereinafter, the structure of the muffle installation of the above-described atmospheric pressure chemical vapor deposition apparatus of the present invention will be described in more detail with reference to the embodiments of the accompanying drawings.
제4도는 본 발명 상압화학기상증착장비의 머플이 1개 설치된 상태를 보인 평면도 및 부분단면도로서, 도시된 바와 같이, 본 발명은 챔버(11)와 머플(12)을 분리형성하고, 체결수단(13)을 이용하여 챔버(11)의 내측에 머플(12)을 설치하여 머플(12)이 착.탈가능하도록 하였다.FIG. 4 is a plan view and partial cross-sectional view showing a state where one muffle is installed in the atmospheric pressure chemical vapor deposition apparatus of the present invention. As shown in the figure, the present invention includes a chamber 11 and a muffle 12, The muffle 12 is installed inside the chamber 11 by using the muffle 13 as shown in FIG.
상기 체결수단(13)은 머플(12)의 양단부에 수개의 조립공(12a)을 형성하고, 그 머플(12)에 설치되는 챔버(11)의 내측에 상기 조립공(12a)에 대응되는 위치에 나사공(14a)이 구비된 플랜지(14)를 설치하며, 상기 머플(12)의 조립공(12a)을 통하여 플랜지(14)의 나사공(14a)에 볼트(BOLT)(15)로 조립하여 머플(12)을 착.탈가능하도록 설치하였다.The fastening means 13 is provided with a number of assembly holes 12a at both ends of the muffle 12 and at a position corresponding to the assembly hole 12a inside the chamber 11 provided in the muffle 12 A flange 14 provided with a hole 14a is provided and assembled with a bolt 15 to a screw hole 14a of a flange 14 through an assembly hole 12a of the muffle 12, 12) were attached and detached.
도면중 미설명 부호 12b는 머플에 형성된 다수개의 관통공이다.In the drawing, reference numeral 12b denotes a plurality of through holes formed in the muffle.
상기와 같이 머플(12)이 챔버(11)의 내측에 착탈가능한 상태로 조립된 상태에서 종래와 동일한 방법으로 증착공정을 진행한다. 이와 같이 장시간 반복하여 공정을 진행하면 머플(12)에 증착막이 형성되어 관통공(12b)을 막게 되는데, 이때 머플(12)의 양단부에 설치된 볼트(14)를 풀고, 머플(11)을 해체한 다음, 제5도에 도시한 바와 같은 HF = H2O 용액이 수납된 에칭용기(16)에 머플(12)을 담근 후, 소정시간 식각에 의한 세정을 진행하고, 다시 꺼냄으로서 간단히 세정을 완료한다. 이와 같이 세정이 완료된 머플(12)은 다시 볼트(15)를 이용하여 챔버(11)의 내측에 조립하고 공정을 진행하게 된다.In the state where the muffle 12 is assembled in the detachable state inside the chamber 11 as described above, the deposition process is performed in the same manner as the conventional method. When the process is repeated for a long time as described above, a vapor deposition film is formed on the muffle 12 to block the through hole 12b. At this time, the bolts 14 provided at both ends of the muffle 12 are loosened and the muffle 11 is disassembled Next, after the muffle 12 is immersed in the etching vessel 16 containing the HF = H 2 O solution as shown in FIG. 5, cleaning is performed by etching for a predetermined time, do. The cleaned muffle 12 is assembled inside the chamber 11 by using the bolts 15, and the process proceeds.
이상에서 상세히 설명한 바와 같이 본 발명 상압화학기상증착장비의 머플 설치구조는 챔버의 내측에 머플을 착.탈가능하도록 설치하고, 세정시 머플을 해제한 후 식각용액에 담가서 세정을 진행할 수 있도록 함으로서, 세정이 용이하고, 세정시간이 적게 소요되며, 또한 종래보다 세정효과가 뛰어나 후공정에서 세정불량에 의한 대량의 증착불량이 웨이퍼에 발생되는 것을 방지하게 되는 효과가 있다.As described above in detail, the muffle installation structure of the atmospheric pressure chemical vapor deposition apparatus of the present invention has a structure in which a muffle is installed on the inner side of the chamber so that the muffle can be removed and removed, The cleaning is easy, the cleaning time is short, and the cleaning effect is more excellent than that in the prior art. This makes it possible to prevent the occurrence of a large amount of defective deposition due to cleaning defects in the wafer in the subsequent process.
Claims (1)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019960054366A KR100242986B1 (en) | 1996-11-15 | 1996-11-15 | Muffle structure of atmospheric chemical vapor deposition system |
| DE19749348A DE19749348C2 (en) | 1996-11-15 | 1997-11-07 | Process for cleaning a gas distributor plate in a plant for chemical separation from the gas phase under atmospheric pressure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019960054366A KR100242986B1 (en) | 1996-11-15 | 1996-11-15 | Muffle structure of atmospheric chemical vapor deposition system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR19980035914A KR19980035914A (en) | 1998-08-05 |
| KR100242986B1 true KR100242986B1 (en) | 2000-02-01 |
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| KR1019960054366A KR100242986B1 (en) | 1996-11-15 | 1996-11-15 | Muffle structure of atmospheric chemical vapor deposition system |
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| Country | Link |
|---|---|
| KR (1) | KR100242986B1 (en) |
| DE (1) | DE19749348C2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004065654A1 (en) * | 2003-01-23 | 2004-08-05 | Ulvac, Inc. | Component for film forming device and method of washing the component |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE698090C (en) * | 1938-03-23 | 1940-11-01 | Bernhard Berghaus | preparations |
| US4780169A (en) * | 1987-05-11 | 1988-10-25 | Tegal Corporation | Non-uniform gas inlet for dry etching apparatus |
| US5352294A (en) * | 1993-01-28 | 1994-10-04 | White John M | Alignment of a shadow frame and large flat substrates on a support |
| US5413671A (en) * | 1993-08-09 | 1995-05-09 | Advanced Micro Devices, Inc. | Apparatus and method for removing deposits from an APCVD system |
-
1996
- 1996-11-15 KR KR1019960054366A patent/KR100242986B1/en not_active IP Right Cessation
-
1997
- 1997-11-07 DE DE19749348A patent/DE19749348C2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| DE19749348A1 (en) | 1998-05-28 |
| DE19749348C2 (en) | 2002-03-21 |
| KR19980035914A (en) | 1998-08-05 |
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