KR200156140Y1 - Chemical nozzle of etching apparatus - Google Patents
Chemical nozzle of etching apparatus Download PDFInfo
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- KR200156140Y1 KR200156140Y1 KR2019960027829U KR19960027829U KR200156140Y1 KR 200156140 Y1 KR200156140 Y1 KR 200156140Y1 KR 2019960027829 U KR2019960027829 U KR 2019960027829U KR 19960027829 U KR19960027829 U KR 19960027829U KR 200156140 Y1 KR200156140 Y1 KR 200156140Y1
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- supply tube
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
본 고안은 반도체 웨이퍼 식각장비의 케미컬 분사장치에 관한 것으로, 종래에는 웨이퍼의 전면에 케미컬을 균일하게 분사하지 못하여 식각균일도가 저하되는 문제점이 있었다. 본 고안 반도체 웨이퍼 식각장비의 케미컬 분사장치는 공급튜브의 상면에 다수개의 분사공을 형성하고, 상기 공급튜브의 측면에 다수개의 측면분사공을 형성하여, 식각공정 진행시 케미컬이 웨이퍼의 상단부 뿐만아니라 하단부에도 분사되도록 함으로서, 웨이퍼의 전면에 걸쳐 균일한 세정 및 식각이 이루어지게 되어 식각균일도가 향상되는 효과가 있다.The present invention relates to a chemical injector of a semiconductor wafer etching equipment, and conventionally, there is a problem that the etching uniformity is reduced because the chemical is not uniformly sprayed on the entire surface of the wafer. In the chemical injection apparatus of the inventive semiconductor wafer etching equipment, a plurality of injection holes are formed on an upper surface of a supply tube, and a plurality of side injection holes are formed on a side of the supply tube, so that the chemical is not only the upper end of the wafer during the etching process. By spraying the lower end portion, uniform cleaning and etching is performed over the entire surface of the wafer, thereby improving the etching uniformity.
Description
제1도는 종래 반도체 웨이퍼 식각장비의 세정조 구조를 보인 종단면도.1 is a longitudinal sectional view showing a cleaning tank structure of a conventional semiconductor wafer etching equipment.
제2도는 종래 케미컬 분사장치가 세정조의 내부에 설치된 상태를 보인 평면도.2 is a plan view showing a state where a conventional chemical injection device is installed inside the cleaning tank.
제3도는 본 고안 케미컬 분사장치가 설치된 세정조의 구조를 보인 종단면도.Figure 3 is a longitudinal cross-sectional view showing the structure of the cleaning tank is provided with the invention chemical injection device.
제4도는 본 고안 반도체 웨이퍼 식각장비의 케미컬 분사장치를 보인 평면도.Figure 4 is a plan view showing a chemical injection device of the inventive semiconductor wafer etching equipment.
제5도는 제4도의 A-A'선을 절단하여 보인 단면도.5 is a cross-sectional view taken along line AA ′ of FIG. 4.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
12,12' : 케미컬 공급튜브 12a,12a' : 분사공12,12 ': chemical supply tube 12a, 12a': injection hole
12b,12b' : 측면분사공12b, 12b ': Side injection hole
본 고안은 반도체 웨이퍼 식각장비의 케미컬 분사장치에 관한 것으로, 특히 웨이퍼(WAFER)의 전면에 케미컬(CHEMICAL)을 균일하게 분사하여 식간균일도(UNIFORMITY)를 향상시키도록 하는데 적합한 반도체 웨이퍼 식각장비의 케미컬 분사장치에 관한 것이다.The present invention relates to a chemical injector of a semiconductor wafer etching equipment, and in particular, a chemical injection of a semiconductor wafer etching equipment suitable for improving uniformity by uniformly injecting a chemical onto the front surface of a wafer. Relates to a device.
일반적으로 반도체 웨이퍼 제조공정 중 포토(PHOTO)공정을 마친 후에 웨이퍼에 잔류하는 포토레지스트(PHOTO RESIST)를 제거하는 식각공정을 진행하게 되는데, 주로 케미컬을 웨이퍼에 분산하는 습식각(WET ETCH)을 하게 되며, 이러한 습식각을 진행하기 위한 수개의 세정조(BATH)가 갖추어진 장비를 일명 웨트 스테이션(WET STATION)이라고 한다. 이와 같은 웨트 스테이션의 세정조가 제1도와 제2도에 도시되어 있는 바, 이를 간단히 설명하면 다음과 같다.In general, an etching process is performed to remove photoresist remaining on the wafer after the photo process is completed in the semiconductor wafer manufacturing process. The wet etching is mainly performed to disperse chemicals on the wafer. Equipment equipped with several batts for performing such wet etching is called a wet station. The cleaning tank of such a wet station is shown in FIG. 1 and FIG. 2, which will be briefly described as follows.
제1도는 종래 반도체 웨이퍼 식각장비의 세정조 구조를 보인 종단면도이고, 제2도는 종래 케미컬 분사장치가 제정조의 내부에 설치된 상태를 보인 평면도이다.1 is a longitudinal sectional view showing a cleaning tank structure of a conventional semiconductor wafer etching equipment, and FIG. 2 is a plan view showing a state in which a conventional chemical spray device is installed in a brewing tank.
도시된 바와 같이, 세정조(1)의 내측 하부에 일정간격을 두고 케미컬 공급튜브(2)(2')가 설치되어 있고, 그 케미컬 공급튜브(2)(2')의 상부에는 다수개의 웨이퍼(W)가 수납되는 캐리어(CARRIER)(3)가 설치되어 있다.As shown, chemical supply tubes 2 and 2 'are provided at a predetermined interval inside the cleaning tank 1, and a plurality of wafers are provided on the chemical supply tubes 2 and 2'. A carrier 3 in which (W) is housed is provided.
그리고, 상기 케미컬 공급튜브(2)(2')의 상면에는 케미컬을 웨이퍼(W)에 분사하기 위한 다수개의 분사공(2a)(2a')이 일렬로 형성되어 있다.In addition, a plurality of injection holes 2a and 2a 'for injecting chemicals onto the wafer W are formed on the upper surface of the chemical supply tubes 2 and 2'.
상기와 같이 구성되어 있는 종래의 세정조에서 웨이퍼의 식각공정이 진행되는 동작을 설명하면 다음과 같다.Referring to the operation of the etching process of the wafer in the conventional cleaning tank configured as described above are as follows.
캐리어(3)에 다수개의 웨이퍼(W)를 수납하고 세정조(1)의 내부로 캐리어(3)를 이동시킨다. 그런 다음, 케미컬 공급튜브(2)(2')에 케미컬을 공급하면 그 케미컬 공급튜브(2)(2')의 상면에 형성된 다수개의 분사공(2a)(2a')을 통하여 웨이퍼(W)에 케미컬이 분사되어 식각이 진행된다.The plurality of wafers W are stored in the carrier 3 and the carrier 3 is moved into the cleaning tank 1. Then, when the chemical is supplied to the chemical supply tube (2) (2 '), the wafer (W) through a plurality of injection holes (2a) (2a') formed on the upper surface of the chemical supply tube (2) (2 '). Chemical is sprayed on and etching is performed.
그러나, 상기와 같은 종래 케미컬 공급튜브(2)(2')는 분사공(2a)(2a')이 상면에 위치하고 있어서 웨이퍼(W)의 상단부에 집중적으로 케미컬을 분사하게 되고, 따라서 웨이퍼(W)의 전면에 걸쳐 균일한 이물질제거 및 식각이 이루어지지 못하는 문제점이 있었다.However, in the conventional chemical supply tube (2) (2 ') is the injection hole (2a) (2a') is located on the upper surface to concentrate the chemical injection on the upper end of the wafer (W), thus the wafer (W) There was a problem that uniform foreign material removal and etching is not performed over the entire surface.
상기와 같은 문제점을 감안하여 안출한 본 고안의 목적은 웨이퍼의 전면에 걸쳐 균일하게 케미컬을 분사하도록 하는데 적합한 반도체 웨이퍼 식각장비의 케미컬 분사장치를 제공함에 있다.SUMMARY OF THE INVENTION An object of the present invention devised in view of the above problems is to provide a chemical injector of a semiconductor wafer etching equipment suitable for injecting chemicals uniformly over the entire surface of a wafer.
상기와 같은 본 고안의 목적을 달성하기 위하여 일정간격을 두고 설치되는 케미컬 공급튜브의 상면에 다수개의 분사공이 형성되어 있는 반도체 웨이퍼 식각장비의 케미컬 분사장치에 있어서, 상기 공급튜브의 내측방향으로 케미컬을 웨이퍼의 하단부에 분사하기 위한 다수개의 측면 분사공을 형성하여서 구성된 것을 특징으로 하는 반도체 웨이퍼 식각장비의 케미컬 분사장치가 제공된다.In the chemical injection device of the semiconductor wafer etching equipment is formed with a plurality of injection holes on the upper surface of the chemical supply tube which is installed at a predetermined interval in order to achieve the object of the present invention, the chemical in the inner direction of the supply tube Provided is a chemical injector of a semiconductor wafer etching equipment, characterized in that formed by forming a plurality of side injection holes for injecting at the lower end of the wafer.
이하, 상기와 같이 구성되는 본 고안 반도체 웨이퍼 식각장비의 케미컬 분사장치를 첨부된 도면의 실시예를 참고하여 보다 상세히 설명하면 다음과 같다.Hereinafter, with reference to the embodiment of the accompanying drawings the chemical injection device of the inventive semiconductor wafer etching equipment is configured as described above in more detail as follows.
제3도는 본 고안 케미컬 분사장치가 설치된 세정조의 구조를 보인 종단면도이고, 제4도는 본 고안 반도체 웨이퍼 식각장비의 케미컬 분사장치를 보인 평면도이며, 제5도는 제4도의 A-A'선을 절단하여 보인 단면도이다.3 is a longitudinal sectional view showing the structure of a cleaning tank in which the inventive chemical spraying device is installed, and FIG. 4 is a plan view showing the chemical spraying device of the semiconductor wafer etching equipment of the present invention, and FIG. 5 is a cutaway line A-A 'of FIG. It is sectional drawing shown.
제3도에 도시된 바와 같이, 본 고안 케미컬 분사장치가 설치된 세정조는 세정조(11)의 내측 하부에 일정간격을 두고 케미컬 공급튜브(12)(12')가 설치되고, 그 케미컬 공급튜브(12)(12')의 상부에는 다수개의 웨이퍼(W)가 수납되는 캐리어(13)가 설치된다.As shown in FIG. 3, in the cleaning tank in which the inventive chemical spray device is installed, the chemical supply tubes 12 and 12 'are installed at a predetermined interval in the inner lower portion of the cleaning tank 11, and the chemical supply tube ( 12) The carrier 13, which accommodates the plurality of wafers W, is installed on the upper portion 12 '.
그리고 상기 케미컬 공급튜브(12)(12')의 상면에는 웨이퍼(W)의 상단부에 케미컬을 분사하기 위한 다수개의 분사공(12a)(12a')이 일렬로 형성되고, 상기 케미컬 공급튜브(12)(12')의 측면에는 웨이퍼(W)들의 하단부에 케미컬을 분사하기 위한 다수개의 측면분사공(12a)(12a')이 일렬로 형성된다.In addition, a plurality of injection holes 12a and 12a 'are formed on the upper surface of the chemical supply tubes 12 and 12' to inject chemical into the upper end of the wafer W. The chemical supply tube 12 12 ', a plurality of side injection holes 12a and 12a' are formed in a row in order to inject chemical into the lower ends of the wafers W.
제3도에 도시된 바와 같이, 상기 측면분사공(12b)은 상기 분사공(12a)에 대하여 대각선방향으로 45°되는 위치에 형성하는 것이 바람직하며, 제4도에 도시된 바와 같이 측면분사공(12b)은 상기 분사공(12a)에 대하여 내측방향으로 45°되는 위치에 형성하는 것이 바람직하다.As shown in FIG. 3, the side injection hole 12b is preferably formed at a position which is 45 ° in a diagonal direction with respect to the injection hole 12a. As shown in FIG. 12b is preferably formed at a position 45 ° inward with respect to the injection hole 12a.
상기와 같이 구성되는 본 고안 케미컬 분사장치가 구비된 반도체 웨이퍼 식각장비의 동작을 설명하면 다음과 같다.Referring to the operation of the semiconductor wafer etching equipment provided with the inventive chemical injection device configured as described above are as follows.
먼저, 캐리어(13)에 다수개의 웨이퍼(W)를 수납하고, 그 캐리어(13)를 세정조(11)의 내부로 이동시킨다. 그런 다음, 상기 케미컬 공급튜브(12)(12')에 케미컬을 공급하면 케미컬 공급튜브(12)(12')의 상면에 형성된 다수개의 분사공(12a)(12a')을 통하여 웨이퍼(W)들의 상단부에 케미컬이 분사되고, 상기 케미컬 공급튜브(12)(12')의 내측방향으로 형성된 측면분사공(12b)(12b')을 통하여 웨이퍼(W)들의 하단부에 케미컬이 분사되어 웨이퍼(W)의 전면에 걸쳐 세정 및 식각이 이루어 진다.First, a plurality of wafers W are stored in the carrier 13, and the carrier 13 is moved into the cleaning tank 11. Then, when the chemical is supplied to the chemical supply tubes 12 and 12 ', the wafer W is provided through a plurality of injection holes 12a and 12a' formed on the upper surface of the chemical supply tubes 12 and 12 '. Chemical is injected at the upper end of the field, and chemical is injected at the lower end of the wafers W through the side injection holes 12b and 12b 'formed inwardly of the chemical supply tubes 12 and 12'. Cleaning and etching are performed over the entire surface of the).
또한, 상기 측면분사공(12b)(12b')이 분사공(12a)(12a')에 대하여 대각선 방향의 45°되는 위치에 형성되고, 내측방향으로도 45°되는 위치에 형성되어, 웨이퍼(W)의 전면에 걸쳐 균일한 케미컬 분사가 이루어진다.Further, the side injection holes 12b and 12b 'are formed at a position which is 45 ° in the diagonal direction with respect to the injection holes 12a and 12a', and are formed at a position which is also 45 ° in the inward direction and thus the wafer ( Uniform chemical injection occurs over the entire surface of W).
이상에서 상세히 설명한 바와 같이 본 고안 반도체 웨이퍼 식각장비의 케미컬 분사장치는 공급튜브의 상면에 다수개의 분사공을 형성하고, 상기 공급튜브의 측면에 다수개의 측면분사공을 형성하여, 식각공정 진행시 케미컬이 웨이퍼의 상단부 뿐만아니라 하단부에도 분사되도록 함으로서, 웨이퍼의 전면에 걸쳐 균일한 세정 및 식각이 이루어지게 되어 식각균일도가 향상되는 효과가 있다.As described in detail above, the chemical injection device of the inventive semiconductor wafer etching equipment forms a plurality of injection holes on the upper surface of the supply tube, and forms a plurality of side injection holes on the side of the supply tube, By spraying not only the upper end portion of the wafer but also the lower end portion, uniform washing and etching are performed over the entire surface of the wafer, thereby improving the etching uniformity.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019960027829U KR200156140Y1 (en) | 1996-09-02 | 1996-09-02 | Chemical nozzle of etching apparatus |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019960027829U KR200156140Y1 (en) | 1996-09-02 | 1996-09-02 | Chemical nozzle of etching apparatus |
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| Publication Number | Publication Date |
|---|---|
| KR19980014677U KR19980014677U (en) | 1998-06-25 |
| KR200156140Y1 true KR200156140Y1 (en) | 1999-09-01 |
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| KR2019960027829U KR200156140Y1 (en) | 1996-09-02 | 1996-09-02 | Chemical nozzle of etching apparatus |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100727490B1 (en) * | 2005-12-08 | 2007-06-13 | 삼성전자주식회사 | Semiconductor device with visible indicator for separating bonding region and probing region, and method of fabricating the same |
-
1996
- 1996-09-02 KR KR2019960027829U patent/KR200156140Y1/en not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100727490B1 (en) * | 2005-12-08 | 2007-06-13 | 삼성전자주식회사 | Semiconductor device with visible indicator for separating bonding region and probing region, and method of fabricating the same |
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| Publication number | Publication date |
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| KR19980014677U (en) | 1998-06-25 |
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