KR100791677B1 - High density plasma chemical vapor deposition apparatus for semiconductor device manufacturing - Google Patents

Abstract

A high-density plasma chemical vapor deposition apparatus for manufacturing a semiconductor device is provided to improve a yield and reliability by forming a deposition layer having a uniform thickness on a wafer. A shower head(206a) is installed in an upper side within a reaction chamber(202) in order to face a wafer(w) loaded on a fixing chuck(204). A plurality of injection holes are formed on a bottom surface of the shower head. A gas supply unit(208) supplies a reaction gas to the shower head and supplies a cooling gas to the fixing chuck in order to cool the wafer. A coil ring(214) is installed between the shower head and the fixing chuck. The coil ring includes a ring-shaped body(214a) and a coil(214b) inserted into the ring-shaped body, in order to form plasma within through-holes or transfer the reaction gas through the through-holes. A power generator(210) is formed to apply low-frequency power to the coil of the coil ring.

Description

High Density Plasma Chemical Vapor Deposition Apparatus for Manufacturing Semiconductor Devices {HIGH DENSITY PLASMA CHEMICAL VAPOR DEPOSITION APPARATUS FOR SEMICONDUCTOR DEVICE MANUFACTURING}

1 is a schematic view showing a conventional high density plasma chemical vapor deposition (HDP-CVD) apparatus,

2 is a schematic view showing a high density plasma chemical vapor deposition apparatus according to a preferred embodiment of the present invention,

3 is a bottom view of a showerhead portion of a high density plasma chemical vapor deposition apparatus according to a preferred embodiment of the present invention.

<Description of the symbols for the main parts of the drawings>

100, 200: high density plasma chemical vapor deposition (HDP-CVD) apparatus

102, 202: reaction chamber 102a: upper wall

102a-1: Coil 104, 204: Fixed Chuck

106: reaction gas inlet 206a: reaction gas injection shower head

206b: curtain gas spray shower head 206a-1, 206b-1: spray hole

108, 208: gas supply unit 110, 210: low frequency power generator

112, 212: high frequency power generator 214: coiling

214a: ring-shaped body 214b: coil

w: wafer

The present invention relates to a High Density Plasma Chemical Vapor Deposition (HDP-CVD) apparatus for manufacturing a semiconductor device, and more particularly, by using a shower head at an upper side in a reaction chamber. While the reaction gas is concentrated on the wafer on the side, the reaction gas is injected uniformly, and the reaction gas injected into the coiling ring passes through a coil ring provided in a ring form between the shower head and the wafer. High density plasma chemistry for the manufacture of semiconductor devices in which the plasma is concentrated on the inside of the coiling, and the deposition film is formed on the lower side wafer corresponding to the reaction of the concentrated plasma and the reaction gas. The present invention relates to a vapor deposition apparatus.

In general, as semiconductor devices are highly integrated, the line width of metal wirings is gradually narrowing, and the spacing between the metal wirings is also narrowing.

Therefore, in forming the interlayer insulating film between the metal wirings having a narrow gap, there is a gap between the metal wirings by the conventional chemical vapor deposition (CVD) method or the plasma enhanced CVD (PECVD) method. ), The high density plasma CVD (High Density Plasma Chemical Vapor Deposition; HDP-CVD) method, which has a very good gap filling property, is mainly used in recent years.

As is well known, the HDP-CVD method is to form an interlayer insulating film by decomposing a reaction gas by a high density plasma and depositing it on a wafer substrate, whereby the deposition and sputter etching of the interlayer insulating film are performed. ) Will proceed simultaneously.

1 shows a conventional high density plasma chemical vapor deposition (HDP-CVD) apparatus.

The high density plasma chemical vapor deposition (HDP-CVD) apparatus 100 forms a reaction space enclosed therein, and a coil 102a-for forming plasma is formed in the dome-shaped upper wall 102a. A fixed chuck (1) is provided on the reaction chamber (102) to be wound up and embedded therein, and a wafer (w), which is a process object, is seated and fixed on the upper surface of the reaction chamber (102). 104 and a plurality of reaction gas injection holes provided on the sidewalls of the reaction chamber 102 corresponding to the sides of the fixed chuck 104 in a circumferential direction to inject and inject the reaction gas into the reaction gas inlet ( 106, the gas supply unit 108 which supplies the reaction gas to the reaction gas inlet 106 and supplies the cooling gas for cooling the wafer w to the fixed chuck 104 as described above, and the reaction chamber. (102) A low-frequency power is applied to the coil 102a-1 in the upper wall 102a so that the reaction chamber ( 102. Low-frequency power generator 110, which allows plasma to be formed inside, and high-frequency power, which is a bias power for sputter etching the interlayer insulating film deposited on the wafer w, is fixed. And a high frequency power generator 112 applied to 104.

In this case, the interlayer insulating film is mainly formed of a silicon oxide film (SiO ₂ ), and thus, when the interlayer insulating film is formed of a silicon oxide film (SiO ₂ ), the reaction gases include silane (SiH ₄ ) gas, oxygen (O ₂ ) gas, and argon. (Ar) gas is used, of which SiH ₄ gas and O ₂ gas is to be the main reaction gas for deposition, Ar gas is to be the main reaction gas for sputter etching.

In addition, the cooling gas supplied to the fixed chuck 104 and injected onto the back side of the wafer w seated on the fixed chuck 104 to cool the wafer w is helium gas. Will be used.

Therefore, when the process proceeds schematically, low frequency power is applied to the upper wall of the reaction chamber 102 from the low frequency power generator 110 so that plasma is continuously formed on the upper side of the reaction chamber 102 first. When the wafer w, which is an object to be processed, is loaded to be seated and fixed on the fixed chuck 104 in the reaction chamber 102, the high frequency power generator 112 is fixed to the fixed chuck 104. High frequency power is applied to properly heat the wafer w early, and then reactant gases of SiH ₄ gas, O ₂ gas and Ar gas are supplied from the gas supply unit 108 to the reaction gas inlet 106. The injection hole 106 is injected into the reaction chamber 102 to be injected. Accordingly, the injected reaction gases are deposited on the wafer w by causing a chemical reaction by the plasma formed therein. Soon as the sputter etching proceeds at the same time, the interlayer insulation film is to be formed finally in an appropriate thickness on the wafer (w).

As such, the deposition and etching proceed simultaneously with the inflow of the reaction gases, wherein the deposition is performed by low frequency power, and the etching is performed by high frequency power, and the deposition is performed by SiH ₄ gas, O ₂ in the reaction gas. By chemical bonding by gas, and etching is performed by collision of ionized ions of Ar gas in the reaction gas.

Next, after deposition and etching proceed simultaneously to form an interlayer insulating film on the wafer w, the wafer w is unloaded from the reaction chamber 102, and then a separate cooling chamber (not shown). Cooling).

In addition, the high frequency power applied to the fixed chuck 104 during the process proceeds mainly to attract ions and radicals for etching toward the wafer (w).

However, when the interlayer insulating film is formed on the wafer w by using the above-described high density plasma chemical vapor deposition (HDP-CVD) apparatus, the result is that the center portion and the edge portion of the wafer w are consequently formed. The thickness of the interlayer insulating film formed at is very unevenly formed.

As a cause of the non-uniformity of the interlayer insulating film, firstly, the reaction gas inlet 106 for injecting the reaction gas is located on the side of the wafer w seated on the fixed chuck 104, and thus from the side. As the reaction gas is supplied, the reaction gas that is injected is unevenly distributed in the reaction chamber 102, and as a result, it is determined that non-uniform deposition is performed on the wafer w.

Second, a low frequency electric power is applied to the coil 102a-1, which is generally widened in the dome-shaped upper wall 102a, to form a plasma. The low frequency applied as the coil 102a-1 is widely spread. Since the power is distributed and thus the plasma formed inside the reaction chamber 102 is also dispersed, it is not concentrated on the wafer w. As a result, an uneven deposition film is formed on the wafer w. Judging.

As described above, when the interlayer insulating film is formed nonuniformly on the wafer w, physical cracks can be easily generated and developed at the portion where the thickness difference is formed, and electric short circuit can be caused. As a result, the yield and reliability of the semiconductor device to be manufactured are greatly reduced.

The present invention was devised to solve the above-mentioned problems, and the reaction gas is uniformly sprayed and supplied to the lower wafer by using the shower head of the upper side, and the shower head and By allowing a reaction gas injected into the coil ring to pass through a ring-shaped coil ring between the wafers, plasma is concentrated inside the coil ring, thereby forming the concentrated reaction gas and the plasma. It is an object of the present invention to provide a high-density plasma chemical vapor deposition apparatus for manufacturing a semiconductor device in which a deposition film is formed very uniformly on a wafer on a lower side corresponding to the reaction.

The high-density plasma chemical vapor deposition apparatus for manufacturing a semiconductor device of the present invention for achieving the above object is provided with a reaction chamber for forming a reaction space sealed therein, and a lower side in the reaction chamber to provide a wafer on the upper surface. In the high-density plasma chemical vapor deposition apparatus for manufacturing a semiconductor device having a fixed chuck to be seated, and a high frequency power generator for applying a high frequency power to the fixed chuck, the reaction to face the wafer seated on the fixed chuck The reaction gas injection shower head which is provided on the upper side in the chamber and sprays the reaction gas downward through a plurality of injection holes formed to be uniformly distributed on the lower surface, and supplies the reaction gas to the reaction gas injection shower head side. And fixing the cooling gas for cooling the wafer. It is provided in the form of a ring between the gas supply unit to be supplied to the side, and the reaction gas injection shower head of the upper side and the fixed chuck of the lower side and the coil is inserted in the ring-shaped body as the low frequency power is applied to the coil Coiling to allow the reaction gas injected from the reaction gas injection shower head to pass through the through hole while the plasma is formed in the through hole inside the body, and to apply low frequency power to the coil of the coil ring Characterized in that it comprises a low frequency power generator.

The above objects and various advantages of the present invention will become more apparent from the preferred embodiments of the invention described below with reference to the accompanying drawings by those skilled in the art.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

2 shows a high density plasma chemical vapor deposition (HDP-CVD) apparatus according to a preferred embodiment of the present invention.

The high-density plasma chemical vapor deposition (HDP-CVD) apparatus 200 according to the present invention includes a reaction chamber 202 for forming a reaction space enclosed therein, and a lower side of the reaction chamber 202 provided thereon. It is provided on the upper side in the reaction chamber 202 so as to face the fixed chuck 204 to be seated and fixed to the wafer (W) to be processed on the surface and the wafer (w) seated on the fixed chuck 204 Reaction gas injection shower head (shower) to uniformly spray the reaction gas (SiH ₄ gas, O ₂ gas and Ar gas) through a plurality of injection holes (206a-1) formed to be uniformly distributed on the lower surface The reaction gas is supplied to the head 206a and the reaction gas spray shower head 206a, and the cooling gas (He gas) for cooling the wafer w is supplied to the fixed chuck 204 described above. The gas supply unit 208, the reaction gas injection shower head 206a on the upper side, and the lower side It is provided in a ring shape between the fixed chuck 204 and the coil 214b is uniformly wound in the ring-shaped body 214a so that the low frequency power is applied to the coil 214b so that the plasma inside the body 214a is fixed. And a low frequency relative to the coil ring 214 and the coil 214b of the coil ring 214 to allow the reaction gas injected from the upper portion to pass through the inside of the body 214a. The low frequency power generator 210 to apply power and the high frequency power generator 212 to apply high frequency power, which is a bias power for sputter etching the interlayer insulating film deposited on the wafer w, to the fixed chuck 204. It will include.

Therefore, unlike the related art, the reaction gas is uniformly sprayed while being concentrated on the wafer w from the upper side to the lower side by using the shower head 206a, and also coiling located directly above the wafer w. Through 214, the plasma is formed to be concentrated only on the portion of the wafer w.

In this case, the reaction gas injection shower head 206a may be formed in a circular shape so as to correspond to the shape of the wafer w, and the size thereof may be slightly larger than the size of the wafer w.

In addition, the coiling 214 may be formed to be a little larger than the size of the wafer (w) the inner portion of the body 214a, the plasma is formed, the body 214a is located in the reaction space is corrosion-resistant It may be formed of stainless steel or aluminum.

As such, the reaction gas jet showerhead 206a and the coiling 214 are formed to be substantially the same size with respect to the wafer w, so that the reaction gas and the plasma are concentrated with respect to the wafer w. It is possible to form an interlayer insulating film of uniform thickness.

In addition, according to the present invention, the curtain gas injection shower head formed so that a plurality of injection holes 206b-1 are uniformly distributed on the lower surface thereof in a ring shape along the outside of the reaction gas injection shower head 206a described above. 206b may be provided, and the curtain gas spray shower head 206b is sprayed from the inside by spraying curtain gas downward at an appropriate pressure through the spray holes 206b-1 on the lower surface thereof. The reactant gas that is not concentrated on the wafer w is prevented from escaping to some outside.

Of course, the portion for supplying the curtain gas from the outside toward the curtain gas injection shower head 206b may be the gas supply unit 208 described above, and the curtain gas may include nitrogen gas and helium gas, which may not affect the process. The same conventional inert gas can be used.

In addition, although not shown, a curtain gas exhaust port may be appropriately formed on the inner lower surface of the reaction chamber 202 to exhaust the curtain gas, which is injected and moved to the lower side, to the outside, and external pumping means may be provided for the curtain gas exhaust port. Pumping pressure to be drawn to the outside by the driving of can be provided.

For reference, FIG. 3 shows a bottom view of the reaction gas spray shower head 206a and the curtain gas spray shower head 206b described above.

In addition, the coiling 214 and the reactive gas injection shower head 206a positioned on the upper side of the wafer w may be provided to adjust the vertical height of the lower side of the wafer w. The reason for this is that when the deposition film is formed too much on the wafer w, the deposition film is formed to be thinner by being further separated from the wafer w, and conversely, when the deposition film is insufficiently formed, This is to adjust the thickness so that the deposited film is made thicker by narrowing the gap.

Finally, since the operation of the high-density plasma chemical vapor deposition apparatus 200 according to the present invention as described above will be carried out almost the same as the conventional description thereof will be omitted, and only the main points of the operation will be described, the uppermost Reaction gas is injected to pass through the inside of the coil ring 214 from the reaction gas injection shower head 206a on the side, and since only plasma is formed inside the coil ring 214, the inside of the coil ring 214 As the plasma and the reaction gas meet and react at the portion, the deposition film is formed very uniformly on the corresponding lower wafer w.

In the foregoing description, it should be understood that those skilled in the art can make modifications and changes to the present invention without changing the gist of the present invention as merely illustrative of a preferred embodiment of the present invention.

According to the present invention, the thickness of the uniformity on the wafer is formed by uniformly injecting and supplying the reaction gas to the wafer by using the shower head of the upper side, and by forming a plasma to concentrate only on the wafer portion by using coiling. Since the excellent deposition film can be formed, the effect that can significantly improve the yield and reliability of the semiconductor device to be manufactured can be achieved.

Claims (5)

A reaction chamber 202 for forming a reaction space enclosed therein, a fixing chuck 204 provided at a lower side of the reaction chamber 202 to allow the wafer w to be seated on an upper surface thereof, and the fixing chuck ( In the high-density plasma chemical vapor deposition apparatus for manufacturing a semiconductor device having a high frequency power generator 212 to apply a high frequency power to the 204, Reaction is provided through a plurality of injection holes 206a-1 provided at an upper side in the reaction chamber 202 so as to face the wafer w seated on the fixed chuck 204 and uniformly distributed on a lower surface thereof. Reaction gas injection shower head 206a for injecting the gas downward, A gas supply unit 208 which supplies the reaction gas to the reaction gas injection shower head 206a and supplies cooling gas for cooling the wafer w to the fixed chuck 204 side; It is provided in the form of a ring between the reaction gas injection shower head 206a on the upper side and the fixing chuck 204 on the lower side, and a coil 214b is inserted into the ring-shaped body 214a, so that the coil 214b is inserted into the coil 214b. As the low frequency power is applied, the plasma is formed in the through hole inside the body 214a while the reaction gas injected from the reaction gas injection shower head 206a passes through the through hole. 214), High-density plasma chemical vapor deposition apparatus for semiconductor device manufacturing, characterized in that it comprises a low frequency power generator 210 to apply a low frequency power to the coil (214b) of the coiling (214). The method of claim 1, The coiling 214 and the reaction gas injection shower head 206a are provided to be liftable to adjust the separation distance from the wafer w. Deposition apparatus. The method of claim 1, The reaction gas is injected from the inside by spraying the curtain gas downward through a plurality of injection holes 206b-1 provided along the circumference of the reaction gas injection shower head 206a and uniformly distributed on a lower surface thereof. High density plasma chemical vapor deposition apparatus for manufacturing a semiconductor device, characterized in that it further comprises a curtain gas injection shower head (206b) to block the dispersion to the outside. The method of claim 3, wherein The curtain gas is, High density plasma chemical vapor deposition apparatus for manufacturing a semiconductor device, characterized in that the inert gas, such as nitrogen gas, helium gas. The method of claim 3, wherein And a curtain gas exhaust mechanism provided on the inner lower surface side of the reaction chamber 202 to allow the curtain gas injected from the upper side to be exhausted to the outside.

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