CN113430501A - Thin film deposition apparatus and thin film deposition method - Google Patents
Thin film deposition apparatus and thin film deposition method Download PDFInfo
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- CN113430501A CN113430501A CN202110676342.5A CN202110676342A CN113430501A CN 113430501 A CN113430501 A CN 113430501A CN 202110676342 A CN202110676342 A CN 202110676342A CN 113430501 A CN113430501 A CN 113430501A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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Abstract
The embodiment of the disclosure discloses a thin film deposition device and a thin film deposition method, wherein the thin film deposition device comprises: the processing chamber comprises a cavity and an accommodating space positioned in the cavity; the shielding assembly is positioned in the accommodating space and used for shielding the cavity wall of the cavity and forming a subspace in the accommodating space; the bearing table is positioned in the subspace and used for bearing the semiconductor structure; the gas input device is positioned at the top of the cavity, is communicated with the subspace and is used for providing the first gas and the second gas into the subspace; under the condition of a first temperature, the first gas and the second gas react to generate a solid byproduct, and a solid film is formed on the surface of the semiconductor structure; the first heating device is positioned in the subspace and positioned on the shielding assembly and used for heating the subspace to a second temperature; wherein the second temperature is greater than the first temperature; under the second temperature condition, the solid by-product is decomposed into a second gas and a third gas.
Description
Technical Field
The embodiment of the disclosure relates to the technical field of semiconductor manufacturing, in particular to a thin film deposition device and a thin film deposition method.
Background
In the fabrication of semiconductor devices, thin films may be formed on semiconductor structures (e.g., silicon substrates) by thin film deposition processes. Such as Physical Vapor Deposition (PVD), Chemical Vapor Deposition (CVD), and Atomic Layer Deposition (ALD), among others.
By introducing reaction gas into the film deposition equipment, the reaction gas can generate a solid film on the surface of the semiconductor structure under certain conditions. However, in practical production, the solid film formation process is often accompanied by the formation of solid by-products, which are difficult to evacuate and remain in the solid film, resulting in poor quality of the solid film and further affecting the performance of the semiconductor device. Therefore, how to reduce the residue of the solid by-product to improve the quality of the solid film is a technical problem to be solved.
Disclosure of Invention
In view of the above, embodiments of the present disclosure provide a thin film deposition apparatus and a thin film deposition method.
According to a first aspect of embodiments of the present disclosure, there is provided a thin film deposition apparatus including:
the processing chamber comprises a cavity and an accommodating space positioned in the cavity;
the shielding assembly is positioned in the accommodating space and used for shielding the cavity wall of the cavity and forming a subspace in the accommodating space;
the bearing table is positioned in the subspace and used for bearing the semiconductor structure;
the gas input device is positioned at the top of the cavity, is communicated with the subspace and is used for providing a first gas and a second gas into the subspace; under the condition of a first temperature, the first gas and the second gas react to generate a solid byproduct, and a solid film is formed on the surface of the semiconductor structure;
the first heating device is positioned in the subspace and positioned on the shielding assembly and used for heating the subspace to a second temperature; wherein the second temperature is greater than the first temperature; under the second temperature condition, the solid by-product is decomposed into the second gas and a third gas.
In some embodiments, the apparatus further comprises:
the air outlet pipeline is positioned on one side of the cavity, is communicated with the subspace through an air outlet hole on the shielding component and is used for discharging the second gas and the third gas in the subspace;
and the second heating device is positioned on the air outlet pipeline and used for heating the air outlet pipeline to the second temperature.
In some embodiments, the apparatus further comprises:
the control device is connected with the first heating device and used for controlling the first heating device to start heating the subspace when the time length of the semiconductor structure placed in the subspace is increased to a first preset time length;
the control device is further used for controlling the first heating device to stop heating the subspace when the time length of the semiconductor structure placed in the subspace is increased to a second preset time length;
and the second preset time length is greater than the first preset time length.
In some embodiments, the apparatus further comprises:
the temperature detection device is positioned in the accommodating space and used for detecting the temperature of the semiconductor structure to obtain a detection temperature;
the third heating device is positioned in the bearing table and used for heating the semiconductor structure to the first temperature;
the control device is respectively connected with the temperature detection device and the third heating device and is used for reducing the heating power of the third heating device when the detection temperature is greater than the temperature threshold value.
In some embodiments, the plane of the first heating device is higher than the plane of the carrier.
In some embodiments, the shutter member is annular;
the first heating device includes: a plurality of first sub-heating devices disposed around the shield assembly toward a sidewall of the subspace; wherein, the distance between two adjacent first sub-heating devices is the same.
In some embodiments, the first temperature is less than 350 ℃; the temperature range of the second temperature is as follows: 350 ℃ to 400 ℃.
In some embodiments, the apparatus further comprises:
and the gas inlet pipeline is communicated with the gas input device through a gas inlet hole of the gas input device and is used for introducing the first gas, the second gas and the inert gas into the gas input device.
In some embodiments, the first gas comprises: titanium tetrachloride gas;
the second gas comprises: ammonia gas;
the third gas comprises: hydrogen chloride gas;
the inert gas includes: argon or helium.
According to a second aspect of the embodiments of the present disclosure, there is provided a thin film deposition method including:
placing a semiconductor structure on a bearing table, and heating the semiconductor structure to a first temperature; wherein the bearing table is positioned in the subspace;
delivering a first gas into the subspace; wherein the first gas is adsorbed on the surface of the semiconductor structure;
stopping the input of the first gas into the subspace and delivering a second gas into the subspace; wherein, under the first temperature condition, the first gas and the second gas react to generate solid byproducts, and a solid film is formed on the surface of the semiconductor structure;
heating the subspace to a second temperature; wherein the second temperature is greater than the first temperature; under the second temperature condition, the solid by-product is decomposed into the second gas and a third gas.
In some embodiments, the method further comprises:
heating the outlet pipe to the second temperature;
and exhausting the gas in the subspace by using the gas outlet pipeline heated to the second temperature.
In the embodiment of the disclosure, by providing the first heating device on the shielding assembly, since the first heating device can heat the subspace to the second temperature, the solid byproduct generated by the reaction of the first gas and the second gas can be decomposed into the gas at the second temperature to be discharged, which is beneficial to reducing the solid film and the residue of the solid byproduct in the processing chamber, improving the quality of the solid film, and further being beneficial to improving the performance of the semiconductor device formed with the solid film.
Drawings
FIG. 1 is a schematic diagram illustrating a deposition process for a thin film according to one exemplary embodiment;
FIG. 2 is a schematic diagram illustrating a reaction process for a thin film according to an exemplary embodiment;
FIGS. 3a and 3b are schematic test data diagrams of a thin film according to an exemplary embodiment;
FIG. 4 is a schematic structural diagram illustrating a thin film deposition apparatus according to an embodiment of the present disclosure;
FIG. 5 is a partial top view of a thin film deposition apparatus shown in accordance with an embodiment of the present disclosure;
FIG. 6 is a schematic flow chart illustrating a thin film deposition method according to an embodiment of the present disclosure.
Detailed Description
The technical solutions of the present disclosure will be further explained in detail with reference to the drawings and examples. While exemplary implementations of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited by the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
The present disclosure is more particularly described in the following paragraphs with reference to the accompanying drawings by way of example. Advantages and features of the present disclosure will become apparent from the following description and claims. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present disclosure.
In the embodiments of the present disclosure, the terms "first", "second", and the like are used for distinguishing similar objects, and are not necessarily used for describing a particular order or sequence.
It should be noted that the technical solutions described in the embodiments of the present disclosure can be arbitrarily combined to obtain a new embodiment without conflict.
FIG. 1 is a schematic diagram illustrating a deposition process for a thin film according to an exemplary embodiment. Referring to fig. 1, the deposition process of the thin film includes the following steps:
the method comprises the following steps: referring to fig. 1 (a), a semiconductor structure 102 is placed on a carrier 101, and the semiconductor structure 102 is heated to a predetermined temperature; wherein, the bearing platform 101 is positioned in the accommodating space 103;
step two: inputting a first gas into the accommodating space 103; wherein a portion of the first gas is adsorbed on the surface of the semiconductor structure 102;
for example, referring to fig. 1 (a), titanium tetrachloride gas (TiCl) is introduced into the accommodating space 1034flow), a part of the titanium tetrachloride gas is adsorbed on the surface of the semiconductor structure 102, and the remaining titanium tetrachloride gas is located in the accommodating space 103.
It is emphasized that the first gas represents one of the reactive precursor gases for forming the solid film and may include titanium tetrachloride gas. It is to be understood that the titanium tetrachloride gas is merely exemplary and is intended to convey the disclosure more clearly to those skilled in the art, however, embodiments of the disclosure are not limited thereto.
Step three: stopping inputting the first gas into the accommodating space 103, and inputting the first inert gas into the accommodating space 103; wherein the first inert gas is used for discharging the residual unadsorbed first gas;
for example, referring to fig. 1 (B), after titanium tetrachloride gas is adsorbed on the surface of the semiconductor structure 102, the titanium tetrachloride gas is stopped to be supplied into the accommodating space 103, and the first inert gas is supplied into the accommodating space 103, so as to exhaust the residual non-adsorbed titanium tetrachloride gas (Purge) in the accommodating space 103.
A first inert gas comprising: nitrogen, argon or helium.
Step four: stopping inputting the first inert gas into the accommodating space 103, and inputting the second gas into the accommodating space 103; under the condition of a preset temperature, the second gas reacts with the first gas adsorbed on the surface of the semiconductor structure 102, and a solid film is formed on the surface of the semiconductor structure;
for example, referring to fig. 1 (C), after the titanium tetrachloride gas remaining in the accommodating space 103 and not adsorbed is exhausted, the input of the first inert gas into the accommodating space 103 is stopped, and ammonia (NH) gas is input into the accommodating space 1033flow), ammonia reacts with titanium tetrachloride at a predetermined temperature and forms a titanium nitride film (TiN film) on the surface of the semiconductor structure 102.
It is emphasized that the second gas represents another reactive precursor gas that reacts with the first gas adsorbed on the surface of the semiconductor structure and forms a solid film on the surface of the semiconductor structure, and when the first gas comprises titanium tetrachloride, the second gas may comprise ammonia. Here, ammonia gas is merely an illustration for more clearly communicating the present disclosure to those skilled in the art, however, embodiments of the present disclosure are not limited thereto.
Step five: stopping inputting the second gas into the accommodating space 103, and transmitting the second inert gas into the accommodating space 103; wherein the second inert gas is used to exhaust the remaining unreacted second gas.
For example, referring to fig. 1 (D), after the titanium tetrachloride adsorbed on the surface of the semiconductor structure 102 is reacted, the ammonia gas is stopped from being introduced into the accommodating space 103, and the second inert gas is introduced into the accommodating space 103, so as to exhaust the remaining unreacted ammonia gas (Purge) in the accommodating space 103.
A second inert gas comprising: nitrogen, argon or helium. The second inert gas may be the same as or different from the first inert gas.
By repeatedly performing steps (a) to (D) in fig. 1, a thin film with a predetermined thickness can be formed on the surface of the semiconductor structure 102. It is emphasized that the predetermined thickness can be chosen appropriately by the skilled person according to the actual requirements.
However, in the fourth step, that is, the process of reacting the first gas and the second gas to form the solid film, the solid by-product is often generated. Taking the reaction of ammonia with titanium tetrachloride as an example, referring to FIG. 2, the reaction of ammonia with titanium tetrachloride comprises:
TiCl4+NH3→TiN+HCl (1)
the above reaction formula (1) is a substitution reaction for producing solid thin film titanium nitride, and the reaction formula (2) is a reaction for producing by-product ammonium chloride (NH)4Cl) is reacted reversibly.
Since the reaction of ammonia with titanium tetrachloride takes place at the surface of the semiconductor structure, i.e. under preset temperature conditions, the preset temperature is typically below 350 ℃. Under the preset temperature condition, ammonium chloride as a solid byproduct is more preferentially generated in the reaction formula (2). Because the solid by-product is difficult to be discharged by vacuum pumping and remains in the titanium nitride film, the concentration of chlorine (Cl) element in the titanium nitride film is higher, and the quality of the formed titanium nitride film is poorer.
In addition, solid ammonium chloride may also adhere to the inner wall of the device forming the accommodating space, which may cause contamination of the inner wall of the device, and in the subsequent process of performing a thin film deposition process using the device, the solid ammonium chloride adhering to the inner wall of the device may separate from the inner wall and fall on the semiconductor structure, which may cause defects on the semiconductor structure, thereby affecting the performance of the semiconductor structure.
Fig. 3a and 3b are schematic diagrams illustrating test data for a thin film according to an exemplary embodiment. FIG. 3a shows the concentration of chlorine in the film at various temperatures, and FIG. 3b shows the resistivity of the semiconductor structure at various concentrations of chlorine in the film. Referring to fig. 3a, as the deposition temperature of the thin film is lowered, the concentration of chlorine in the thin film is increased. Referring to fig. 3b, as the concentration of chlorine in the film increases, the resistivity of the semiconductor structure increases.
When the titanium nitride film is deposited at a temperature lower than 350 ℃, the concentration of chlorine in the titanium nitride film is higher than 4.0% due to the ammonium chloride remaining in the titanium nitride film, and the resistivity of the semiconductor structure having the titanium nitride film deposited on the surface thereof is higher than 950 μ Ω · cm, which leads to a reduction in the performance of the finally formed semiconductor device.
In view of the above, the disclosed embodiments provide a thin film deposition apparatus.
Fig. 4 is a schematic structural diagram illustrating a thin film deposition apparatus 100 according to an embodiment of the present disclosure. Referring to fig. 4, the thin film deposition apparatus 100 includes:
a processing chamber including a chamber body 110 and an accommodating space 120 in the chamber body 110;
a shielding component 130, located in the accommodating space 120, for shielding the cavity wall 110a of the cavity 110 and forming a subspace 121 in the accommodating space 120;
a carrier 140 located in the subspace 121 for carrying the semiconductor structure 200;
a gas input device 150 located at the top of the chamber 110 and communicating with the subspace 121 for providing the first gas and the second gas into the subspace 121; wherein, under the first temperature condition, the first gas and the second gas react to generate a solid byproduct, and a solid film is formed on the surface of the semiconductor structure 200;
a first heating device 160 located in the subspace 121 and on the shielding assembly 130, for heating the subspace 121 to a second temperature; wherein the second temperature is greater than the first temperature; under the second temperature condition, the solid by-product is decomposed into a second gas and a third gas.
Illustratively, the processing chamber may comprise a deposition chamber for forming a thin film on a surface of a semiconductor structure. The chamber body 110 may include an inner surface (i.e., a chamber wall 110a), and the accommodating space 120 may be defined by the chamber wall 110 a.
The shielding assembly 130 may be disposed in the chamber body 110 and shield a portion of the chamber wall 110a of the chamber body 110, so as to reduce damage to the chamber wall 110a caused by reaction gases, products and byproducts during the process of forming a thin film on the surface of the semiconductor structure, and prolong the service life of the thin film deposition apparatus 100.
It should be noted that the shielding assembly 130 may divide the accommodating space 120 into at least two sub-spaces, one of the sub-spaces may be located between the cavity wall 110a and the shielding assembly 130, and the other sub-space may be defined by the shielding assembly 130, i.e., the sub-space 121.
The carrier stage 140 may include a circular platform or a square platform.
The semiconductor structure 200 may include a substrate or a substrate formed with a stacked structure. The constituent materials of the substrate may include: elemental semiconductor materials (e.g., silicon, germanium), group iii-v compound semiconductor materials, group ii-vi compound semiconductor materials, organic semiconductor materials, or other semiconductor materials known in the art.
In some embodiments, the stacked structure may be a stacked structure in a 3D NAND memory, and include a plurality of insulating layers arranged at intervals and a gap between adjacent insulating layers, and may further include a memory string perpendicular to the stacked structure, the gap exposing the memory string in the stacked structure.
In some embodiments, the stacked structure may also be a phase change memory cell stacked structure in a phase change memory, and includes a first electrode layer, a first electrode layer and a gate layer, or the first electrode layer, the gate layer and a second electrode layer, which are stacked in sequence from bottom to top.
It is to be understood that the semiconductor structure 200 is representative of a structure requiring a solid thin film to be formed on a surface thereof and is not intended to describe a particular type.
Illustratively, referring to fig. 4, a top surface of the gas input device 150 may protrude from a top of the cavity 110, and a bottom surface of the gas input device 150 may be located within the subspace 121 for delivering the reaction gas and/or the inert gas (purge gas) into the subspace 121.
In some embodiments, the bottom of the gas inlet device 150 may include a plurality of sub-channels through which the reactant gas may be uniformly delivered to the surface of the semiconductor structure.
In some embodiments, the gas input device 150 comprises: an accelerator.
Illustratively, when the first gas and/or the second gas is introduced into the sub-space 121 through the gas input device 150, a larger electric field force can be generated by adjusting the voltage of the accelerating device, so that the first gas and/or the second gas is accelerated to impact downwards to reach the surface of the semiconductor structure 200.
The first heating device 160 includes: a resistance wire heater or an illumination heating lamp, etc., for heating the subspace 121 to the second temperature. It is emphasized that the second temperature comprises the decomposition temperature or sublimation temperature of the solid by-product.
It should be noted that in order to ensure that the first gas adsorbed on the surface of the semiconductor structure sufficiently reacts to form a dense solid film, an excessive amount of the second gas is introduced. During the process of introducing the excessive amount of the second gas into the subspace 121, the first heating device 160 may heat the second gas to a second temperature, under which the decomposition of the solid byproduct into gas may be promoted.
In the embodiment of the disclosure, by providing the first heating device on the shielding assembly, since the first heating device can heat the subspace to the second temperature, the solid byproduct generated by the reaction of the first gas and the second gas can be decomposed into the gas at the second temperature to be discharged, which is beneficial to reducing the solid film and the residue of the solid byproduct in the processing chamber, improving the quality of the solid film, and further being beneficial to improving the performance of the semiconductor device formed with the solid film.
In some embodiments, referring to fig. 4, the thin film deposition apparatus 100 further includes:
an air outlet pipe 170 located at one side of the cavity 110, and communicated with the subspace 121 through an air outlet 130a on the shielding assembly 130, for exhausting the second gas and the third gas in the subspace 121;
and a second heating device 180, located on the gas outlet pipe 170, for heating the gas outlet pipe 170 to a second temperature.
Illustratively, the aperture of the air outlet hole is matched with the pipe diameter of the air outlet pipeline. Specifically, if the air outlet pipeline is a rigid air outlet pipe, the aperture of the air outlet hole is equal to or slightly larger than the pipe diameter of the rigid air outlet pipeline. If the air outlet pipeline is a flexible air outlet pipe or an elastic air outlet pipe, the aperture of the air outlet hole is slightly smaller than the pipe diameter of the flexible air outlet pipeline or the elastic air outlet pipeline when the flexible air outlet pipeline or the elastic air outlet pipeline is not deformed, so that the gap between the atmosphere and the subspace 121 is reduced as much as possible at the air outlet hole through the flexible deformation of the flexible air outlet pipeline or the elastic air outlet pipeline, and optionally, a gas seal is formed.
A second heating device 180 comprising: a resistance wire heater or a light heating lamp, and the second heating means 180 may be the same as the first heating means 160 or may be different from the first heating means 160.
In some embodiments, the thin film deposition apparatus 100 further includes:
and the air exhaust device is communicated with the air outlet pipeline 170 and is used for exhausting the second gas and the third gas in the subspace 121 through the air outlet pipeline 170.
Illustratively, referring to fig. 4, the left end of the air outlet pipe 170 is connected to the air outlet 130a of the shielding assembly 130, and the right end of the air outlet pipe 170 is connected to an air extractor (not shown).
The air extraction means may comprise an extraction pump and an exhaust pipe.
It is noted that when the temperature in the outlet pipe is low, the decomposed second gas and third gas may react again in the outlet pipe to form solid crystals, which are more difficult to decompose than the solid by-products in the sub-spaces, and furthermore, when there are more solid crystals attached to the wall of the outlet pipe, the outlet pipe may be clogged.
In the embodiment of the disclosure, the second heating device and the air exhaust device are arranged on the air outlet pipeline, and the second heating device can heat the air outlet pipeline to the second temperature, so that the probability of secondary reaction of the second gas and the third gas on the air outlet pipeline is reduced. In addition, the air exhaust device can rapidly exhaust the second gas and the third gas on the air outlet pipeline, the concentration of the third gas on the air outlet pipeline is reduced, the generation reaction of solid crystals is inhibited, the adhesion of the solid crystals on the wall of the air outlet pipeline is reduced, the probability of blockage of the air outlet pipeline is reduced, and the smooth discharge of the second gas and the third gas is facilitated.
In some embodiments, the thin film deposition apparatus 100 further includes:
the control device is connected with the first heating device and used for controlling the first heating device to start heating the subspace when the time length of the semiconductor structure arranged in the subspace is increased to a first preset time length;
the control device is also used for controlling the first heating device to stop heating the subspace when the time length of the semiconductor structure placed in the subspace is increased to a second preset time length;
and the second preset time length is greater than the first preset time length.
Illustratively, the control device may include a general purpose processor chip or other logic device chip or the like. When it is detected that the first preset time length is passed when the semiconductor structure 200 enters the subspace 121, the control device outputs a turn-on command to the first heating device 160 to control the first heating device 160 to start heating the subspace 121. When it is detected that the second preset time length passes after the semiconductor structure 200 enters the subspace 121, the control device outputs a turn-off command to the first heating device 160 to control the first heating device 160 to stop heating the subspace 121.
Illustratively, the first predetermined time period is set from when the semiconductor structure 200 enters the subspace 121 to when the input of the second gas into the subspace is started. When the first preset time period is over, the control device controls the first heating device 160 to be turned on, so as to heat the second gas input into the subspace 121 to the second temperature.
The second predetermined time period is set from when the semiconductor structure 200 enters the subspace 121 to when the input of the second gas into the subspace is stopped. When the second preset time period is over, the control device 160 controls the first heating device 160 to be turned off, and the heating of the subspace 121 is stopped.
It is understood that the second predetermined duration covers the first predetermined duration, and therefore, the second predetermined duration is greater than the first predetermined duration.
In the embodiment of the disclosure, the control device is arranged, so that the first heating device can be reasonably controlled to be turned on and off according to different stages of film deposition, the thermal decomposition requirement of byproducts in the film deposition process is met, and the energy cost is saved.
In some embodiments, the thin film deposition apparatus 100 further includes:
the temperature detection device is positioned in the accommodating space and used for detecting the temperature of the semiconductor structure to obtain a detection temperature;
the third heating device is positioned in the bearing table and used for heating the semiconductor structure to the first temperature;
and the control device is respectively connected with the temperature detection device and the third heating device and is used for reducing the heating power of the third heating device when the detected temperature is greater than the temperature threshold value.
Illustratively, the temperature detection device may include a temperature sensor capable of detecting the temperature of the surface of the semiconductor structure 200 in real time. The temperature detection device can be disposed at a position in the accommodating space, which is as high as the semiconductor structure 200 and close to the outer side of the semiconductor structure 200, and is beneficial to accurately detecting the actual temperature of the surface of the semiconductor structure 200.
In some embodiments, referring to fig. 4, the carrier stage 140 includes:
a base 141 for carrying the semiconductor structure 200;
and a lifting table 142 for lifting the semiconductor structure to a preset height.
Illustratively, the third heating device, which may be located within the base 141 (not shown in the figures), comprises a resistance wire heater. When the semiconductor structure 200 is lifted to the predetermined height by the lift stage 142, the third heating device starts to heat the semiconductor structure 200, and after a certain period of time, the semiconductor structure 200 is heated to the first temperature (i.e., the predetermined reaction temperature of the first gas and the second gas). The first temperature may include a set temperature range, and the first temperature threshold and the second temperature threshold are an upper limit value and a lower limit value of the set temperature range, respectively.
It should be noted that the heated second gas reaching the surface of the semiconductor structure may cause the temperature of the surface of the semiconductor structure to be higher than the first temperature, which may affect the growth of the solid film.
In the embodiment of the disclosure, the control device may adjust the heating power of the third heating device based on a comparison result between the detected temperature obtained by the temperature detecting device and the set upper limit value, so as to ensure that the semiconductor structure is within the set heating temperature range.
In some embodiments, the plane of the first heating device is higher than the plane of the carrier table.
It should be noted that, during the deposition of the thin film, the sub-space is in a vacuum state, and the heat generated by the first heating device in the vacuum state is less efficiently conducted to the surface of the semiconductor structure.
In the embodiment of the present disclosure, the plane on which the first heating device is located is higher than the plane on which the carrier is located, so that the distance between the first heating device and the semiconductor structure can be increased, and the possibility that heat generated by the first heating device is directly conducted to the surface of the semiconductor structure is reduced.
In some embodiments, the shield member is annular;
the first heating device includes: a plurality of first sub-heating devices arranged around the shielding assembly towards the side wall of the subspace; wherein, the distance between two adjacent first sub-heating devices is the same.
Illustratively, referring to fig. 5, four first sub-heating devices, namely, a first sub-heating device 161, a second first sub-heating device 162, a third first sub-heating device 163 and a fourth first sub-heating device 164 are disposed on the inner wall 130a of the shielding assembly 130.
Illustratively, referring to FIG. 5, when the shield assembly 130 is circular, the arc length L between the first sub-heater 161 and the second first sub-heater 162 along the inner wall of the shield assembly 130 is long1Equal to the arc length L between the second first sub-heating unit 162 and the third first sub-heating unit 1632。
Illustratively, referring to fig. 5, a straight distance D between the first sub-heating unit 161 and the second first sub-heating unit 1621Equal to the linear distance D between the second first sub-heating unit 162 and the third first sub-heating unit 1632。
In the embodiment of the disclosure, the plurality of first heating sub-devices are arranged on the inner wall of the shielding assembly at equal intervals, so that the decomposition of the solid byproducts in the sub-space is more sufficient, and the residue of the solid byproducts in the solid film is further reduced.
In some embodiments, the first heating device comprises: a ring-shaped heating lamp or a ring-shaped resistance wire, etc.
In some embodiments, the first temperature is less than 350 ℃; the temperature range of the second temperature is: 350 ℃ to 400 ℃. Preferably, the second temperature is 370 ℃.
It is understood that the first temperature means a reaction temperature of the first gas and the second gas, i.e., a deposition temperature of the solid thin film. The second temperature represents the decomposition temperature or sublimation temperature of the solid by-product. When the temperature of the second temperature is too low, for example, less than 350 ℃, it may cause difficulty in decomposition of the solid by-product, and when the temperature of the second temperature is too high, for example, more than 400 ℃, it may affect deposition (for example, nucleation or grain growth) of the solid thin film.
In the embodiment of the disclosure, by reasonably setting the range of the second temperature, the deposition of the solid film is less affected while the decomposition of the solid byproduct is ensured.
In some embodiments, referring to fig. 4, the thin film deposition apparatus 100 further includes:
and the gas inlet pipeline 190 is communicated with the gas input device 150 through a gas inlet hole 150a of the gas input device and is used for introducing the first gas, the second gas and the inert gas into the gas input device 150.
Illustratively, the aperture of the air inlet hole is matched with the pipe diameter of the air inlet pipeline. Specifically, if the air intake duct is a rigid air intake duct, the aperture of the air intake hole is equal to or slightly larger than the pipe diameter of the rigid air intake duct. If the air inlet pipeline is a flexible air inlet pipe or an elastic air inlet pipe, the aperture of the air inlet hole is slightly smaller than the pipe diameter of the flexible air inlet pipeline or the elastic air inlet pipeline when the flexible air inlet pipeline or the elastic air inlet pipeline is not deformed, so that the gap between the atmosphere and the subspace 121 is reduced as much as possible at the air inlet hole through the flexible deformation of the flexible air inlet pipeline or the elastic air inlet pipeline, and optionally, air sealing is formed.
In some embodiments, the first gas comprises: titanium tetrachloride gas;
the second gas comprises: ammonia gas;
the third gas comprises: hydrogen chloride gas;
the inert gas includes: argon or helium.
Illustratively, when the first gas is titanium tetrachloride and the second gas is ammonia, the ammonia reacts with the titanium tetrachloride to form a titanium nitride film and hydrogen chloride gas, which combines with the ammonia in the subspace 121 to form particulate ammonium chloride, which is suspended in the subspace 121.
If the first heating device is not arranged, the granular ammonium chloride falls on the surface of the titanium nitride film and is difficult to be drawn away. After the first heating device 160 is disposed on the shielding assembly 130, the ammonia gas input into the subspace 121 through the gas input device 150 can be heated to a second temperature (e.g., 370 ℃), and the ammonium chloride suspended in the subspace 121 is decomposed into ammonia gas and hydrogen chloride gas under the second temperature condition, and then the ammonia gas and the hydrogen chloride gas are exhausted through the air exhaust device, so that the amount of the ammonium chloride remaining on the surface of the titanium nitride film is reduced, and the purity of the formed titanium nitride film is improved.
In some embodiments, the thin film deposition apparatus 100 may further include: and the controlled valve is positioned on the gas flow passage for gas circulation and used for conducting the gas flow passage or disconnecting the gas flow passage. It is understood that the above gases include: a first gas, a second gas, and an inert gas.
The controlled valve can be a manual valve and can also be an automatic valve. The automatic valve may comprise an electrically controlled valve or a solenoid valve.
The controlled valve may be one or more valves that can be used to open and close the gas flow path and/or adjust the cross-sectional flow area of the gas flow path to control the flow rate of the gas in the gas flow path.
In some embodiments, the controlled valve may be located in at least one of:
the joint of the air inlet pipeline and the air inlet hole; the joint of the air inlet pipeline and the air supply box; the joint of the air outlet pipeline and the air outlet hole; the joint of the air outlet pipeline and the air extractor.
In some embodiments, the controlled valve comprises at least: the air inlet end and the air outlet end are respectively connected with an air pipe, and the air pipe can be an air inlet pipeline or an air outlet pipeline. And valves which are communicated or isolated from the air inlet end and the air outlet end through the positions and/or shapes of the valves are arranged in the air inlet end and the air outlet end.
FIG. 6 is a schematic flow chart illustrating a thin film deposition method according to an embodiment of the present disclosure. As described with reference to fig. 6, the method comprises the steps of:
s110: placing the semiconductor structure on a bearing table, and heating the semiconductor structure to a first temperature; wherein, the bearing table is positioned in the subspace;
s120: delivering a first gas into the subspace; wherein the first gas is adsorbed on the surface of the semiconductor structure;
s130: stopping the input of the first gas into the subspace and delivering the second gas into the subspace; under the condition of a first temperature, the first gas and the second gas react to generate a solid byproduct, and a solid film is formed on the surface of the semiconductor structure;
s140: heating the subspace to a second temperature; wherein the second temperature is greater than the first temperature; under the second temperature condition, the solid by-product is decomposed into a second gas and a third gas.
Illustratively, as shown in connection with fig. 4, the semiconductor structure 200 is placed on a susceptor 141, and the semiconductor structure is heated to a first temperature by a third heating device in the susceptor.
Illustratively, the first gas is delivered into the sub-space 121 through the gas input device 150, and after the first gas is uniformly adsorbed on the surface of the semiconductor structure 200, the delivery of the first gas into the sub-space 121 is stopped.
Illustratively, a second gas is delivered into the subspace 121 through the gas input device 150, and under the first temperature condition, the first gas and the second gas react to form a solid film and a third gas on the surface of the semiconductor structure, and a part of the second gas and the third gas combine to generate a solid byproduct which is suspended in the subspace 121.
Illustratively, the subspace is heated to a decomposition temperature of the solid by-product at which decomposition of the solid by-product is promoted and generation of the solid by-product is suppressed.
In some embodiments, the above method further comprises:
heating the outlet pipe to a second temperature;
and exhausting the gas in the subspace by using the gas outlet pipeline heated to the second temperature.
Illustratively, when the second gas and the third gas decomposed by the solid byproducts are discharged to the gas outlet pipeline, the gas outlet pipeline is heated to the second temperature, the second gas and the third gas are difficult to react on the gas outlet pipeline for the second time to generate solid crystals, and the discharge of the second gas and the third gas for promoting the decomposition of the solid byproducts is facilitated.
The above description is only for the specific embodiments of the present disclosure, but the scope of the present disclosure is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present disclosure, and all the changes or substitutions should be covered within the scope of the present disclosure. Therefore, the protection scope of the present disclosure shall be subject to the protection scope of the claims.
Claims (11)
1. A thin film deposition apparatus, comprising:
the processing chamber comprises a cavity and an accommodating space positioned in the cavity;
the shielding assembly is positioned in the accommodating space and used for shielding the cavity wall of the cavity and forming a subspace in the accommodating space;
the bearing table is positioned in the subspace and used for bearing the semiconductor structure;
the gas input device is positioned at the top of the cavity, is communicated with the subspace and is used for providing a first gas and a second gas into the subspace; under the condition of a first temperature, the first gas and the second gas react to generate a solid byproduct, and a solid film is formed on the surface of the semiconductor structure;
the first heating device is positioned in the subspace and positioned on the shielding assembly and used for heating the subspace to a second temperature; wherein the second temperature is greater than the first temperature; under the second temperature condition, the solid by-product is decomposed into the second gas and a third gas.
2. The apparatus of claim 1, further comprising:
the air outlet pipeline is positioned on one side of the cavity, is communicated with the subspace through an air outlet hole on the shielding component and is used for discharging the second gas and the third gas in the subspace;
and the second heating device is positioned on the air outlet pipeline and used for heating the air outlet pipeline to the second temperature.
3. The apparatus of claim 2, further comprising:
the control device is connected with the first heating device and used for controlling the first heating device to start heating the subspace when the time length of the semiconductor structure placed in the subspace is increased to a first preset time length;
the control device is further used for controlling the first heating device to stop heating the subspace when the time length of the semiconductor structure placed in the subspace is increased to a second preset time length;
and the second preset time length is greater than the first preset time length.
4. The apparatus of claim 3, further comprising:
the temperature detection device is positioned in the accommodating space and used for detecting the temperature of the semiconductor structure to obtain a detection temperature;
the third heating device is positioned in the bearing table and used for heating the semiconductor structure to the first temperature;
the control device is respectively connected with the temperature detection device and the third heating device and is used for reducing the heating power of the third heating device when the detection temperature is greater than the temperature threshold value.
5. The apparatus of claim 1,
the plane of the first heating device is higher than the plane of the bearing table.
6. The apparatus of claim 1,
the shielding component is annular;
the first heating device includes: a plurality of first sub-heating devices disposed around the shield assembly toward a sidewall of the subspace; wherein, the distance between two adjacent first sub-heating devices is the same.
7. The apparatus of claim 1, wherein the first temperature is less than 350 ℃; the temperature range of the second temperature is as follows: 350 ℃ to 400 ℃.
8. The apparatus of claim 1, further comprising:
and the gas inlet pipeline is communicated with the gas input device through a gas inlet hole of the gas input device and is used for introducing the first gas, the second gas and the inert gas into the gas input device.
9. The apparatus of claim 8,
the first gas comprises: titanium tetrachloride gas;
the second gas comprises: ammonia gas;
the third gas comprises: hydrogen chloride gas;
the inert gas includes: argon or helium.
10. A thin film deposition method is characterized by comprising
Placing a semiconductor structure on a bearing table, and heating the semiconductor structure to a first temperature; wherein the bearing table is positioned in the subspace;
delivering a first gas into the subspace; wherein the first gas is adsorbed on the surface of the semiconductor structure;
stopping the input of the first gas into the subspace and delivering a second gas into the subspace; wherein, under the first temperature condition, the first gas and the second gas react to generate solid byproducts, and a solid film is formed on the surface of the semiconductor structure;
heating the subspace to a second temperature; wherein the second temperature is greater than the first temperature; under the second temperature condition, the solid by-product is decomposed into the second gas and a third gas.
11. The method of claim 10, further comprising:
heating the outlet pipe to the second temperature;
and exhausting the gas in the subspace by using the gas outlet pipeline heated to the second temperature.
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