TWM610205U - Wafer-level light-emitting diode die detection device - Google Patents

Abstract

A wafer-level light-emitting diode die detection device comprising a carrier for placing a wafer to be tested, a plurality of light-emitting diode dies are arranged on the wafer. The output of the tester using multiple sets of current sources after the voltage and current are applied to the multi-channel probe card, multiple dies are lit at the same time. When multiple dies emit light at the same time. The image sensor is used to capture the image of light information and position information, and the captured image is used to obtain the luminous intensity and chromaticity coordinates of each die through an algorithm. And classify the diode die based on these data.

Description

Wafer-level light-emitting diode crystal grain detection device

This creation is about a die detection device, especially a wafer-level light-emitting diode die detection device that captures the light-emitting image of the die through an image sensor and detects multiple light-emitting diode dies at the same time.

In the semiconductor manufacturing process, it can be divided into IC design, wafer manufacturing process, wafer inspection, and wafer packaging. Wafer inspection is to probe each die on the wafer. A probe made of gold wire made of thin hair is mounted on the inspection head, and the probe is contacted with the pad on the die to test it. For electrical characteristics, unqualified dies will be marked, and then when the wafer is cut into separate dies based on the die, the unqualified dies with the mark will be eliminated and the next process will not be performed. So as not to increase manufacturing costs.

According to the conventional wafer inspection method, a spot measuring device is used to collect light through an integrating sphere to measure the lightness value of a single die one by one. Among them, the maximum number of dies that can be spot-tested by the spot-testing device during spot-testing is only 8 dies. Looking at the existing small-size products, there are about 680,000 in a 4-inch wafer. Die, through the above-mentioned spot measurement method, and then the integrating sphere collects light for a single die one by one. It takes more than 4 hours to complete the spot measurement of a 4-inch wafer, which cannot achieve good efficiency.

As semiconductor technology continues to improve, the size of wafer-level light-emitting diodes Continue to move towards smaller size applications. As the die size shrinks, its inspection becomes more difficult, and the measurement time required for a single wafer naturally increases. However, current inspection equipment cannot target the die size. Reduce this advancement to improve inspection efficiency, making the slow inspection speed gradually become a defect in the semiconductor manufacturing process.

In response to the rapid changes in semiconductor development, the applicant worked hard to find a solution to the problem of improving detection efficiency, and finally developed a detection device that can detect multiple dies at a time and collect light to improve efficiency.

At this point, the main purpose of this creation is to provide an inspection device capable of spot-testing multiple light-emitting diode dies at the same time, so as to increase the measurement speed and shorten the inspection time for a single wafer.

In order to achieve the above objective, this invention provides a wafer-level light-emitting diode die inspection device, which includes: a carrier for placing a wafer to be tested, and a plurality of light-emitting diode dies on the wafer , A probe card can be used to light up light-emitting diodes on multiple wafers, a test machine is used to transmit multiple sets of test voltages and currents to the probe card, and an image sensor is set on the carrier to place the The opposite side of the wafer is used to capture images of the light-emitting diodes on the wafer driven by the probe card; and a server is electrically connected to the image sensor for receiving the aforementioned images, The image is used to calculate the luminous intensity and chromaticity coordinates of the aforementioned light-emitting diodes.

As a preferred mode, the carrying platform is made of high-transmittance glass.

As a preferred mode, the tester provides multiple current source channels, and can simultaneously transmit multiple sets of voltages and currents to multiple light-emitting diodes on the wafer driven by the probe card.

As a preferred mode, the image sensor drives the probe card in a color camera mode Of the light-emitting diode die for image capture.

As a preferred method, the server performs calculations on each image captured by the image sensor to obtain the luminous intensity and chromaticity coordinates of all the light-emitting diodes on the circle, and classify the light-emitting diode crystal grains.

The advantage of this creation is that by using the probe card to inspect the wafer, it can spot multiple light-emitting diode dies at a time, and then use the image sensor to capture the image of the light-emitting diode. By capturing images of multiple LEDs at once, and sending these images back to the server for calculation, the luminous intensity and chromaticity coordinates of multiple LEDs can be obtained to obtain each LED The location information of the die, and according to the spectrum and luminous intensity of each light-emitting diode die, to classify all the light-emitting diode die, which effectively improves the measurement speed and shortens the inspection time of a single wafer.

100: Wafer-level light-emitting diode die inspection device

110: Wafer

111: LED crystal grain

120: bearing platform

130: Probe card

131: Port

140: image sensor

150: test machine

160: server

Figure 1 is a schematic diagram of the creation of a wafer-level light-emitting diode die inspection device.

Figure 2 is a schematic diagram of creating a probe card to measure wafers.

In order to enable those skilled in the art to better understand the creative solution, the technical solution in the creative embodiment will be described clearly and completely in conjunction with the accompanying drawings in the creative embodiment. Obviously, the described embodiment is only It is a part of the embodiment of this creation, not all the embodiment. Based on the embodiments in this creation, all other embodiments obtained under the premise of equivalent changes and modifications made by persons of ordinary skill in the art shall fall within the protection scope of the present invention.

It should be noted that the terms "upper", "lower", "in", "outer", etc. in the description and claims of this creation and the above-mentioned drawings are used to distinguish similar objects. Must be used to describe a specific order or sequence. It should be understood that the materials used in this way can be interchanged under appropriate circumstances so that the embodiments of the creation described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations of them are intended to cover non-exclusive inclusions.

Please refer to Figure 1 for the schematic diagram of the creative wafer-level LED die inspection device, and Figure 2 for the schematic diagram of the creative probe card spot testing wafer. This creation is related to a wafer-level light-emitting diode die inspection device 100. The wafer-level light-emitting diode die inspection device 100 at least includes: a carrier 120 for placing a wafer 110 to be tested. A plurality of LED dies 111 have been formed on the wafer 110, a probe card 130 can be used to light up the LED dies 111 on a plurality of wafers 110, and a test machine 150 can be used to transmit multiple groups Voltage and current are applied to the probe card 130, and an image sensor 140 is provided on the opposite side of the wafer 110 where the stage 120 is placed, and is used to perform the driving of the light-emitting diode dies 111 that are driven to emit light. Image capture; and a server 160 is electrically connected to the image sensor 140 for receiving the image captured by the image sensor 140, and the image is obtained through an algorithm to obtain the aforementioned light-emitting diode die 111 luminous intensity and chromaticity coordinates.

Wherein, the carrier 120 is made of glass with a high transparency coefficient, so that the light from the light-emitting diode die 111 can be completely captured by the image sensor 140.

The testing machine 150 provides a plurality of current source channels. In practice, the number of current source channels can reach at least 32 groups, and can transmit multiple groups of voltage and current to the probe card 130 at the same time. The channels can reach more than 32 groups (including). The current source channels are connected to the corresponding number of connection ports 131 on the probe card 130 to direct power to the probe contacts (not shown) provided on the lower surface of the probe card 130, and these contacts The light-emitting diode die 111 is contacted to light up more than 32 (including) light-emitting diode die 111 at the same time.

In implementation, the wafer 110 is first placed on the carrier 120, the probe card 130 is suspended above the wafer 110, and then the tester 150 passes through the connection ports on the upper surface of the probe card 130 131 provides voltage and power to the probe card 130, and makes current flow through a plurality of probe contacts on the lower surface of the probe card 130. When power flows through the probe contacts, the contacts are used to contact the wafer 110 under the probe card 130, so that a plurality of light-emitting diodes on the wafer 110 touched by the probe contacts The polar body crystal grains 111 are illuminated at the same time.

As a result, since the number of probe contacts on the probe card 130 can reach more than 32, the number of light-emitting diode crystal grains 111 that can be lit can also reach more than 32, so that more than 32 light-emitting diodes can be illuminated. The polar body crystal grains 111 emit light at the same time.

When the light-emitting diode dies 111 emit light at the same time, the image sensor 140 located under the carrier 120 will take a picture of the light-emitting diode dies 111. Through the color camera method, multiple pictures will be taken. Continuous shooting to capture the images of the light information and position information of the light-emitting diode dies 111, and finally send the captured light information and position information related images to the server 160, through the server 160 performs calculations on the received images to calculate the luminous intensity and chromaticity coordinates of each light-emitting diode crystal grain 111, thereby completing the detection of each light-emitting diode crystal grain.

Repeating the foregoing actions, the server 160 calculates each image captured by the image sensor 140 to obtain the luminous intensity and chromaticity coordinates of all the LED dies 111 on the wafer 110 to obtain each The position information of the light-emitting diode crystal grain 111, and according to the spectrum and luminous intensity of each light-emitting diode crystal grain 111, to classify all the light-emitting diode crystal grains 111, effectively improve the measurement speed and shorten the monolithic crystal Circle detection time.

To sum up, if we look at the existing small-size products, the 4-inch wafer There are about 680,000 light-emitting diode dies 111. Through this case, the probe card 130 can measure more than 32 (including) light-emitting diode dies 111 at the same time, and it is equipped with multiple light-emitting diode dies 111 at the same time. The measured image sensor 140 performs photometric measurement, and classifies all the light-emitting diode crystal grains 111 according to the spectrum and luminous intensity of each light-emitting diode crystal grain 111, so as to increase the measurement speed and shorten the Single wafer inspection time is within 2 hours.

The above are only specific embodiments of the application, and do not limit the application in any form. Although the application has been disclosed as above in specific embodiments, it is not intended to limit the application. Anyone familiar with the profession , Without departing from the scope of the technical solution of the application, when the technical content disclosed above can be used to make some changes or modification into equivalent embodiments with equivalent changes, but any content that does not deviate from the technical solution of the application is based on the technical essence of the application Any simple modifications, equivalent changes and modifications made to the above embodiments still fall within the scope of the technical solution of the present application.

100: Wafer-level light-emitting diode die inspection device

110: Wafer

111: LED crystal grain

120: bearing platform

130: Probe card

131: Port

140: image sensor

150: test machine

160: server

Claims (5)

A wafer-level light-emitting diode crystal grain detection device, which comprises: A carrier table for placing a wafer to be tested, the wafer has a plurality of light-emitting diode dies; A probe card, which can be used to light up the light-emitting diodes on multiple wafers; A testing machine for transmitting multiple sets of test voltages and currents to the probe card; An image sensor, which is arranged on the opposite side of the stage where the wafer is placed, and is used to capture images of the light-emitting diodes on the wafer that are driven by the probe card; and A server is electrically connected to the image sensor for receiving the image, and using the image to obtain the luminous intensity and chromaticity coordinates of the light-emitting diode through an algorithm. The wafer-level light-emitting diode die detection device described in the first item of the scope of patent application, wherein the carrying platform is made of high-transparency glass. The wafer-level light-emitting diode die detection device described in the first item of the scope of patent application, wherein the tester provides a plurality of current source channels, and can transmit multiple sets of voltage and current to the probe card at the same time. The wafer-level light-emitting diode die detection device described in the first item of the scope of patent application, wherein the image sensor uses a color camera to capture images of the light-emitting diode die driven by the probe card . The wafer-level light-emitting diode die inspection device described in the first item of the scope of patent application, wherein the server performs calculations on each image captured by the image sensor to obtain all light-emitting diodes on the wafer The luminous intensity and chromaticity coordinates of the polar body are used to classify the crystal grains of the light-emitting diode.

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