201109635 六、發明說明： 【發明所屬之技術領域】 本發明是有關於一種半導體 守歷疋件的1測方法，201109635 VI. Description of the invention: [Technical field to which the invention pertains] The present invention relates to a method for measuring a semiconductor tracking element.
指一種發光二極體的光性量測方法。 j X 【先前技術】 發光二極體在封裝前，如果晉 如果里測貪料越準確， 处 掌握封裝後的發光特性，進而滿. 月匕 兩疋良率與品質的要求，以Refers to the photometric method of a light-emitting diode. j X 【Prior Art】 Before the package, if the sensation is more accurate, the illuminating characteristics of the package will be mastered, and then the yield and quality requirements will be met.
往發光二極體在封裝前的光性測試，無論是在晶圓切割前 或切割後使用，都是針對發光二極體的―發光面做單面的 光收集n著進行分析、運算後以獲得光亮度、光譜 等光性資料，來模擬封裝後所能提供的光性資料。 然而，斜對使用基材為透明材料，例如藍寶石等材料 的發光二極體時，由於其正面、背面皆有相當的發光強度 ，所以只有使用單面光收集的方式時，就會對這—類發光 -一極體的光性量測產生較大誤差_。 此外這類發光二極體在正面與背面的亮度比例也 未必固定，例如第一批發光二極體的正面亮度佔65%，背 面亮度佔25%，收集不到的亮度佔1〇%時，第二批發光二 極體的正面焭度佔40〇/〇，背面亮度佔5〇%，收集不到的亮 度佔10。/。’兩批發光二極體的亮度比例差異其實在製程中 是不容易控制的變化’所以即使目前量測技術已經將其中 一面的收光角.度調整到最大範圍，也無法兼顧收集另一面 的發光亮度’然而另一面的發光亮度卻會對於封裝製程的 規劃’以及封裝後的整體亮度產生很大影響。 201109635 【發明内容】 纟發月的目的疋在於提供—種可獲得發光二極 面方向的光性資料，以供綜合分析運用的發光二 極體的光性量測方法。 於疋’本發明發光二極體的光性量測方法是用於檢測 透明承載板上的發光：極體，該發光二極體具 A) -正面及-背面，該光性量測方法包含以下步驟： …：備-上光谓測裝置及一下光制裝置，分別對應該 發光二極體的正、背面。 B)The photometric test of the light-emitting diode before packaging, whether before or after the wafer is cut, is performed on the light-emitting surface of the light-emitting diode for single-sided light collection. Obtain optical data such as brightness and spectrum to simulate the optical data that can be provided after packaging. However, when the base material is a transparent material, such as a light-emitting diode of a material such as sapphire, since the front and back sides have considerable luminous intensity, when only one-side light collection is used, this will be the case. Class-like luminescence - the photometric measurement of a polar body produces a large error _. In addition, the brightness ratio of the front and back sides of the light-emitting diode is not necessarily fixed. For example, the front brightness of the first wholesale light diode is 65%, the back brightness is 25%, and the brightness that is not collected is 1%. The front of the two wholesale photodiodes accounted for 40 〇 / 〇, the back side brightness accounted for 5 〇%, the collected brightness accounted for 10. /. 'The difference in brightness ratio between the two wholesale photodiodes is actually not easy to control in the process'. So even if the current measurement technology has adjusted the light-receiving angle of one side to the maximum range, it is impossible to collect the other side of the light. The brightness 'however, the brightness of the other side will have a great influence on the planning of the packaging process' and the overall brightness after packaging. 201109635 [Summary of the Invention] The purpose of the 纟 月 疋 is to provide a photometric measurement method for a luminescent diode that can be used for comprehensive analysis.于疋' The photometric measurement method of the light-emitting diode of the present invention is for detecting the light emission on the transparent carrier plate: the polar body, the light-emitting diode has A) - front side and - back side, and the photometric measuring method comprises The following steps: ...: preparation - glazing pre-measurement device and lower-light device, respectively corresponding to the front and back of the LED. B)
C 利用點測方式使該發光二極體發光，並由該上、下光 谓測裝置偵測該發光二極體正、背面方向的光’以獲 得該發光二極體正、背面方向的光性資料。 收集該上、下光僧測裝置谓測所得的光性資料，並進 行綜合分析及計算。 本發明的有益效果在於：透過該上、下光债測裝置收 集該發光二極體正面與背面方向的光性資料，就可以避免 忽略其中-面的光亮度、光譜等光性資料，進而更完盖地 獲得整體光性資料，以計算模擬出最接近該發光二極體封 裝後的發光狀態’另外透過分析该正面方向與該背面方向 所佔的不同光亮度比例，就可以作為選擇封以法的參考 資料，以及回溯製程影響的分析資料，所以能達到增進製 程良率及產品品質的使用效果。 【實施方式] 有關本發明之前述及其他技術内容、特點與功效，在 201109635 以下配合參考圖式之數個較佳實施例的詳細說明中，將可 清楚的呈現。 在提出詳細說明之前，要注意的是，在以下的說明中 ’類似的元件是以相同的編號來表示。 如圖1、2所示，本發明發光二極體的光性量測方法的 第一較佳實施例’是用於檢測一設置在一透明承載板20上 的發光二極體21 ’該發光二極體21具有一正面211及〜背 面212 ’該光性量測方法包含以下步驟：C illuminating the light-emitting diode by means of spot measurement, and detecting light in the front and back directions of the light-emitting diode by the upper and lower light detectors to obtain light in the front and back directions of the light-emitting diode Sexual information. The optical data obtained from the upper and lower optical surveying devices are collected and comprehensively analyzed and calculated. The invention has the beneficial effects of collecting the optical data of the front and back directions of the light-emitting diode through the upper and lower optical debt measuring devices, thereby avoiding ignoring the lightness, spectrum and other light materials of the light-emitting surface thereof, and further Obtaining the overall optical data to calculate the simulation of the light-emitting state closest to the LED package. In addition, by analyzing the ratio of the difference between the front direction and the back direction, it can be selected as an option. The reference materials of the law, as well as the analysis data of the retrospective process impact, can achieve the effect of improving process yield and product quality. The above and other technical contents, features, and advantages of the present invention will be apparent from the following detailed description of the preferred embodiments of the accompanying drawings. Before the detailed description is made, it is noted that in the following description, similar elements are denoted by the same reference numerals. As shown in FIG. 1 and FIG. 2, a first preferred embodiment of the method for measuring the optical properties of the light-emitting diode of the present invention is for detecting a light-emitting diode 21 disposed on a transparent carrier 20 The diode 21 has a front surface 211 and a back surface 212'. The optical measurement method comprises the following steps:
(A)製備一上光偵測裝置30、一下光偵測裝置40及—電連 接於該上、下光偵測裝置3 〇、40的運算單元5 0，該上 、下光偵測裝置30、40分別對應該發光二極體21的 正面211與背面212，該上光偵測裝置3〇包括—積分 球31 (lntegrating sphere)、一連接於該積分球的 光偵測器 32 ( Photo Detector )、—分光計 33 ( sPectr〇meter)，及一連接該積分球31與該分光計u 之間的光纖34 (Fiber)，且該下光伯測裝置4〇也包括 -積分球41 ' -連接於該積分球41的光偵測器仏 刀光汁43 ’及一連接該積分球41與該分光計μ之 間的光纖44。 Β 利用點測方式使該發光二極體21發光並由該上 光偵測裝置3〇、40分物該發光二極體21正， 面方向的光’以獲得該發光二極體2ι的正、背面 ,方㈣紐:㈣。在本實施财，該發光二相 即是藉由二探針90供蛩, 供電而發光，謂由該等積分 201109635 31、41分別收集該發光二極體2ι的正、背面川、 212方向的光，並經由該等光债測器32、42及分光計 W、43分別得到該發光二極體21的正、背面2ΐι' .川方向的光亮度、光譜等紐資料，該光亮度資料包 括光強度（cd或mcd)、光通量（流明）、光功率（w 或m\V )等，該光譜資料包括主波長、峰波長、中心 波長、半波寬、色純度、色座標、、演色性等。 c)收集該上、下光偵測裝置3G、4(M貞測所得的光亮度、 光譜等光性資料，並輸出至該運算單元5()内進行綜合 分析及計算。該運算單元5〇除可單獨分析該發光二極 體B的正面211方向或背面212方向的光亮度、光譜 等光性資料’最重要的是可將該發光二極體21的正' 背面211、212方向的光性資料對應混合計算及分析。 此外，該運算單元5G亦可視將來該發光二極體21可 能進行的不同封裝方式，給予不同的分析計算方法， 以獲得最接近該發光二極體21封裝後的光性資料。 综上所述，本發明透過該上、下光偵測裝置3〇、4〇收 集該發光二極體21的正面211與背面212的光性資料，就 巧以避免忽略其中一面的光亮度、光譜等光性資料，進而 更完善地獲得整體光性資料，以計算模擬出最接近該發光 二極體21封裝後的發光狀態，另外透過分析該發光二極體 21的正面211方向與背面212方向所佔的不同光亮度比例 ’就可以作為選擇封裝方法的參考資料，以及回溯製程影 響的分析資料，所以能達到增進製程良率及產品品質的使 201109635 用效果6 由於本發明i要在於提供以往發光二極體單面光性量 1所忽略的另_面的光性對封裝後的影響，因此也可以提 =發光二極體在磊晶製程的重要資料分析，藉以觀察不 ° “或是不同批生產的發光二極體，其正面及背面方向 的發光效盈在比例上有何變化。 值得-提的是在步驟⑻中，該上、下光偵測裝置 的偵測方式，可以是當該發光二極體21點亮一次時 光=:=職£3()'4()_進行_’以同步獲得 枓，亦可先點亮該發光二極體21 一次， 面 Ζ = ι —置％進㈣測’再點亮—次使該發 以二，二背：212方向的下光偵測裝置40進㈣測， 性=獲付該發光二極體21的正、背面211、212方向的光 可視1)二1實際應用時，該上、T光偵測裳置3。，也 發光，，量測_ 3 , 212方向的光f生資料，如圖 不’，、·、本發明的第二較佳#施例 的不同處在於該下光須測裝置 ：广佳貫施例 發弁-梳躺疋以一積分球41收集該 先一極體2!的背面方向的光，並經 41的光_器42得到該發光二極體 二= 資料；另如® 4 ^方向的先性 為本發明的第三較佳實施例， 第，施例的不同處在於，該下光侧…採用 -光侦測…測得到該發光二極體21的背面方向、的光 201109635 ^生貧料，又該上下光谓測裝置3〇、40可相互對調設置， 同樣能夠獲得所需發光二極體21的正、背面方向的光性資 料如圖1 3 4所示，因此，本發明的上、下光偵測裝 置30、40可視需求將上述光偵測器％、42、光纖34、44 與分光計33、43、積分球31、41等制元件單獨或混搭使 用，以分別獲得該發光二極體21正、f面方向的光性資料 ’而供分析計算使用’如此同樣能達到本發明的目的。 ^惟以上所述者，僅為本發明之數個較佳實施例而已， 當不能以此限定本發明實施之制，即大凡依本發明申請 專利範圍及說明書内容所作之簡單的等效變化與㈣，皆 仍屬本發明專利涵蓋之範圍内。 【圖式簡單說明】 、圖1是一示意圖，說明本發明發光二極體的光性量測 方法的第一較佳實施例； 一上光 發光二 圖2是一方塊圖，說明該第一較佳實施例中， 偵測裝置、—下光偵測裝置及一運算單元，針對_ 極體的量測架構； 圖3是—示意圖 方法的第二較佳實施例 圖4是一示意圖 方法的第三較佳實施例 說明本發明發光二極體的光性量測 ;及 說明本發明發光二極體的光性量測 201109635 【主要元件符號說明】 20'*·* -…透明承載板 34...... …光纖 21…… …·發光二極體 40 ****'* …下光偵測裝置 211 ··· …·正面 41…… …積分球 212… —背面 …光偵測器 3 0..... …·上光偵測裝置 …分光計 3 1…… —積分球 /| «♦>=**♦ …光纖 32…… …·光偵測器 5 0…… …運算單元 3 3、* … •…分光計 ...9 〇 ♦ * " ♦ * …探針(A) preparing a light detecting device 30, a lower light detecting device 40, and an arithmetic unit 50 electrically connected to the upper and lower light detecting devices 3, 40, the upper and lower light detecting devices 30 40 corresponds to the front surface 211 and the back surface 212 of the LED 21, and the light detecting device 3 includes an integrating sphere 31 and a photo detector 32 connected to the integrating sphere (Photo Detector) , a spectrometer 33 (sPectr〇meter), and an optical fiber 34 (Fiber) connecting the integrating sphere 31 and the spectrometer u, and the downlighting device 4〇 also includes an - integrating sphere 41 ' - The photodetector squeegee 43' connected to the integrating sphere 41 and an optical fiber 44 connected between the integrating sphere 41 and the spectrometer μ.该 The light-emitting diode 21 is illuminated by the spot measurement method, and the light-emitting diodes are positively and laterally lighted by the light-emitting detecting device 3, 40 to obtain the positive light of the light-emitting diode 2 , back, side (four) New: (four). In the present embodiment, the two-phase light is emitted by the two probes 90, and is powered by the power supply. The light of the front, back, and 212 directions of the light-emitting diodes 2 is collected by the points 201109635 31 and 41, respectively. And the light and brightness data of the front and back sides of the light-emitting diode 21 are obtained through the optical debt detectors 32 and 42 and the spectrometers W and 43. The brightness information includes light. Intensity (cd or mcd), luminous flux (lumens), optical power (w or m\V), etc., the spectral data includes dominant wavelength, peak wavelength, center wavelength, half-wave width, color purity, color coordinates, color rendering, etc. . c) Collecting the optical data such as the brightness and the spectrum of the upper and lower light detecting devices 3G and 4, and outputting them to the arithmetic unit 5 () for comprehensive analysis and calculation. The arithmetic unit 5〇 In addition, the light intensity, spectrum, and the like of the light-emitting diode B in the front-side 211 direction or the back surface 212 direction can be separately analyzed. The most important thing is that the light-emitting diode 21 can be light-directed in the front side 211 and 212 directions. The data is corresponding to the hybrid calculation and analysis. In addition, the computing unit 5G can also provide different analysis and calculation methods according to different packaging modes that the LEDs 21 may perform in the future, to obtain the closest package to the LEDs 21 . In summary, the present invention collects the optical information of the front surface 211 and the back surface 212 of the light-emitting diode 21 through the upper and lower light detecting devices 3〇, 4〇, so as to avoid ignoring one side. The optical data such as brightness and spectrum are used to obtain the overall optical data more accurately, so as to calculate the light-emitting state closest to the package of the light-emitting diode 21, and further analyze the front surface 211 of the light-emitting diode 21. Direction and The ratio of the different brightness ratios in the direction of the back surface 212 can be used as a reference material for selecting the packaging method, and the analysis data of the influence of the retrospective process, so that the process yield and product quality can be improved, and the effect of the product is improved. In order to provide the influence of the lightness of the other surface of the conventional light-emitting diode on the single-sided lightness 1 on the package, it is also possible to analyze the important data of the light-emitting diode in the epitaxial process, thereby observing the observation. "Or different LED light-emitting diodes, the difference in the ratio of the luminous efficiency in the front and back directions. It is worth mentioning that in step (8), the detection method of the upper and lower light detecting devices When the light-emitting diode 21 is lit once, the light=:= job £3()'4()_ performs _' to obtain the 同步 in synchronization, and the light-emitting diode 21 may be lighted once, once. = ι - set % into (four) test 're-lighting - the second to make the hair to two, two back: 212 downlight detection device 40 into (four) measurement, sex = the front and back of the light-emitting diode 21 211, 212 direction of light can be seen 1) 2 1 practical application, the upper, T Detecting the skirt 3, also illuminating, measuring _ 3, the direction of the light in the direction of 212, as shown in the figure, the second preferred embodiment of the present invention differs in that the light is required Measuring device: Guangjia Guan's hairpin-comb 收集 疋 疋 疋 疋 疋 疋 疋 疋 疋 收集 收集 收集 收集 收集 收集 收集 收集 收集 收集 收集 收集 收集 收集 收集 收集 收集 收集 收集 收集 收集 收集 收集 收集 收集 收集 收集 收集 收集 收集 收集 收集 收集 收集Another example is that the orientation of the 4^ direction is the third preferred embodiment of the present invention. The difference of the embodiment is that the light-emitting side... is measured by the light detection. In the back direction, the light 201109635 is a poor material, and the upper and lower light pre-measurement devices 3〇, 40 can be mutually adjusted, and the light data of the front and back directions of the desired light-emitting diode 21 can be obtained as shown in FIG. 4, therefore, the upper and lower light detecting devices 30, 40 of the present invention can form the photodetectors %, 42, the optical fibers 34, 44, the spectrometers 33, 43, the integrating spheres 31, 41, etc. as needed. Used alone or in combination to obtain the optical data of the positive and negative directions of the light-emitting diode 21, respectively, for analysis and calculation. The object of the invention can be achieved. However, the above is only a few preferred embodiments of the present invention, and it is not possible to limit the implementation of the present invention, that is, the simple equivalent change made by the scope of the present invention and the contents of the specification. (4) It is still within the scope of the patent of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic view showing a first preferred embodiment of a method for measuring the optical properties of a light-emitting diode of the present invention; FIG. 1 is a block diagram showing the first In a preferred embodiment, the detecting device, the downlight detecting device and an arithmetic unit are directed to the measuring structure of the _ pole body; FIG. 3 is a second preferred embodiment of the schematic method. FIG. 4 is a schematic method. The third preferred embodiment illustrates the optical measurement of the light-emitting diode of the present invention; and the optical measurement of the light-emitting diode of the present invention 201109635 [Description of main components] 20'*·* -... Transparent carrier plate 34 ...... fiber optic 21.........light emitting diode 40 ****'* ...downlight detecting device 211 ·····front 41...integral ball 212...-backside...light detection Detector 3 0..... ...... glazing detection device... spectrometer 3 1... — integrating sphere / | «♦>=**♦ ... fiber 32... .... photodetector 5 0... ...arithmetic unit 3 3,* ... •... spectrometer...9 〇♦ * " ♦ * ...probe