TWM594672U - LED filament structure and LED light bulb having the same - Google Patents
LED filament structure and LED light bulb having the same Download PDFInfo
- Publication number
- TWM594672U TWM594672U TW108204484U TW108204484U TWM594672U TW M594672 U TWM594672 U TW M594672U TW 108204484 U TW108204484 U TW 108204484U TW 108204484 U TW108204484 U TW 108204484U TW M594672 U TWM594672 U TW M594672U
- Authority
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- Prior art keywords
- light
- emitting diode
- glass
- emitting
- substrate
- Prior art date
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- 239000000758 substrate Substances 0.000 claims abstract description 100
- 239000000843 powder Substances 0.000 claims abstract description 70
- 230000005855 radiation Effects 0.000 claims abstract description 70
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 53
- 239000000463 material Substances 0.000 claims abstract description 51
- 230000017525 heat dissipation Effects 0.000 claims abstract description 32
- 230000005284 excitation Effects 0.000 claims abstract description 30
- 238000006243 chemical reaction Methods 0.000 claims abstract description 8
- 239000011521 glass Substances 0.000 claims description 60
- 239000000919 ceramic Substances 0.000 claims description 40
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 33
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 12
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminum fluoride Inorganic materials F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 claims description 11
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 10
- 239000007789 gas Substances 0.000 claims description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 8
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims description 8
- 239000003575 carbonaceous material Substances 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 8
- 239000010931 gold Substances 0.000 claims description 8
- 239000002923 metal particle Substances 0.000 claims description 8
- 150000004767 nitrides Chemical class 0.000 claims description 8
- IRPGOXJVTQTAAN-UHFFFAOYSA-N 2,2,3,3,3-pentafluoropropanal Chemical compound FC(F)(F)C(F)(F)C=O IRPGOXJVTQTAAN-UHFFFAOYSA-N 0.000 claims description 7
- 239000003292 glue Substances 0.000 claims description 7
- 229910021389 graphene Inorganic materials 0.000 claims description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 6
- 239000000853 adhesive Substances 0.000 claims description 6
- 230000001070 adhesive effect Effects 0.000 claims description 6
- OEYOHULQRFXULB-UHFFFAOYSA-N arsenic trichloride Chemical class Cl[As](Cl)Cl OEYOHULQRFXULB-UHFFFAOYSA-N 0.000 claims description 6
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 6
- 239000002041 carbon nanotube Substances 0.000 claims description 6
- 229910002804 graphite Inorganic materials 0.000 claims description 6
- 239000010439 graphite Substances 0.000 claims description 6
- 239000004033 plastic Substances 0.000 claims description 6
- 229920003023 plastic Polymers 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 229920002379 silicone rubber Polymers 0.000 claims description 5
- 239000004945 silicone rubber Substances 0.000 claims description 5
- 239000004925 Acrylic resin Substances 0.000 claims description 4
- 229920000178 Acrylic resin Polymers 0.000 claims description 4
- 235000017166 Bambusa arundinacea Nutrition 0.000 claims description 4
- 235000017491 Bambusa tulda Nutrition 0.000 claims description 4
- 241001330002 Bambuseae Species 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- 229910017586 La2S3 Inorganic materials 0.000 claims description 4
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 4
- 229910019142 PO4 Inorganic materials 0.000 claims description 4
- 235000015334 Phyllostachys viridis Nutrition 0.000 claims description 4
- 229910000796 S alloy Inorganic materials 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 239000005371 ZBLAN Substances 0.000 claims description 4
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 150000004645 aluminates Chemical class 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 4
- 239000011425 bamboo Substances 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- 239000006229 carbon black Substances 0.000 claims description 4
- 239000003610 charcoal Substances 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 239000010883 coal ash Substances 0.000 claims description 4
- 229910017052 cobalt Inorganic materials 0.000 claims description 4
- 239000010941 cobalt Substances 0.000 claims description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000003822 epoxy resin Substances 0.000 claims description 4
- 229920002457 flexible plastic Polymers 0.000 claims description 4
- 150000002222 fluorine compounds Chemical class 0.000 claims description 4
- VNWHJJCHHGPAEO-UHFFFAOYSA-N fluoroboronic acid Chemical class OB(O)F VNWHJJCHHGPAEO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 150000004820 halides Chemical class 0.000 claims description 4
- 239000001307 helium Substances 0.000 claims description 4
- 229910052734 helium Inorganic materials 0.000 claims description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- FXADMRZICBQPQY-UHFFFAOYSA-N orthotelluric acid Chemical class O[Te](O)(O)(O)(O)O FXADMRZICBQPQY-UHFFFAOYSA-N 0.000 claims description 4
- 239000011224 oxide ceramic Substances 0.000 claims description 4
- 229910052574 oxide ceramic Inorganic materials 0.000 claims description 4
- 239000005365 phosphate glass Substances 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229920000647 polyepoxide Polymers 0.000 claims description 4
- 229920001721 polyimide Polymers 0.000 claims description 4
- 239000009719 polyimide resin Substances 0.000 claims description 4
- 229920005749 polyurethane resin Polymers 0.000 claims description 4
- 239000002096 quantum dot Substances 0.000 claims description 4
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 4
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- 229910021332 silicide Inorganic materials 0.000 claims description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims description 4
- AFNRRBXCCXDRPS-UHFFFAOYSA-N tin(ii) sulfide Chemical compound [Sn]=S AFNRRBXCCXDRPS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 229910052720 vanadium Inorganic materials 0.000 claims description 4
- 229910052727 yttrium Inorganic materials 0.000 claims description 4
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 4
- 229910052726 zirconium Inorganic materials 0.000 claims description 4
- 150000002910 rare earth metals Chemical class 0.000 claims description 3
- -1 biochar Substances 0.000 claims description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims 2
- 229910016569 AlF 3 Inorganic materials 0.000 claims 2
- 229910004573 CdF 2 Inorganic materials 0.000 claims 2
- XPIIDKFHGDPTIY-UHFFFAOYSA-N F.F.F.P Chemical compound F.F.F.P XPIIDKFHGDPTIY-UHFFFAOYSA-N 0.000 claims 2
- 229910005793 GeO 2 Inorganic materials 0.000 claims 2
- 239000010452 phosphate Substances 0.000 claims 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 11
- 229910052751 metal Inorganic materials 0.000 description 18
- 239000002184 metal Substances 0.000 description 18
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 229910016495 ErF3 Inorganic materials 0.000 description 4
- 238000005286 illumination Methods 0.000 description 4
- QGJSAGBHFTXOTM-UHFFFAOYSA-K trifluoroerbium Chemical compound F[Er](F)F QGJSAGBHFTXOTM-UHFFFAOYSA-K 0.000 description 4
- 238000007789 sealing Methods 0.000 description 3
- 230000005457 Black-body radiation Effects 0.000 description 2
- LVEULQCPJDDSLD-UHFFFAOYSA-L cadmium fluoride Chemical compound F[Cd]F LVEULQCPJDDSLD-UHFFFAOYSA-L 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- FPHIOHCCQGUGKU-UHFFFAOYSA-L difluorolead Chemical compound F[Pb]F FPHIOHCCQGUGKU-UHFFFAOYSA-L 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 235000021317 phosphate Nutrition 0.000 description 2
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 210000004508 polar body Anatomy 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 230000000191 radiation effect Effects 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/20—Light sources comprising attachment means
- F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
- F21K9/232—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings specially adapted for generating an essentially omnidirectional light distribution, e.g. with a glass bulb
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/20—Light sources comprising attachment means
- F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
- F21K9/233—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings specially adapted for generating a spot light distribution, e.g. for substitution of reflector lamps
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/20—Light sources comprising attachment means
- F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
- F21K9/235—Details of bases or caps, i.e. the parts that connect the light source to a fitting; Arrangement of components within bases or caps
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V17/00—Fastening of component parts of lighting devices, e.g. shades, globes, refractors, reflectors, filters, screens, grids or protective cages
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V19/00—Fastening of light sources or lamp holders
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
- F21V29/50—Cooling arrangements
- F21V29/502—Cooling arrangements characterised by the adaptation for cooling of specific components
- F21V29/503—Cooling arrangements characterised by the adaptation for cooling of specific components of light sources
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
- F21V29/50—Cooling arrangements
- F21V29/70—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
- F21V29/85—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems characterised by the material
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V31/00—Gas-tight or water-tight arrangements
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
- F21V9/30—Elements containing photoluminescent material distinct from or spaced from the light source
- F21V9/32—Elements containing photoluminescent material distinct from or spaced from the light source characterised by the arrangement of the photoluminescent material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01K—ELECTRIC INCANDESCENT LAMPS
- H01K1/00—Details
- H01K1/02—Incandescent bodies
- H01K1/04—Incandescent bodies characterised by the material thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
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Abstract
本新型公開一種發光二極體燈絲和發光二極體燈絲燈泡,其中的發光二極體燈絲包括:一可透光的基材,至少一個LED晶片固定在可透光的基材的正面,在可透光的基材兩端具有一第一電極引腳和一第二電極引腳和所述發光二極體晶片串聯,以及一螢光體,螢光體配置在可透光的基材的正面,螢光體將LED晶片封裝於其中並露出第一電極引腳和第二電極引腳;一散熱發光層形成在可透光的基材的背面或正面,散熱發光層是由包含多種不同輻射波段的電磁波粉體所製成。LED晶片產生的激發光源可以直接激發螢光體發光,LED晶片的部分激發光源可以穿過可透光的基材之後激發散熱發光層發光,從而減少發光二極體燈絲的背面的暗區,散熱發光層含有的電磁波粉體可以由熱激發產生熱輻射增進散熱效果,散熱發光層含有的紅外光轉可見光的上轉材料可以進一步吸收紅外光熱輻射產生可見光,同步增進發光二極體燈絲的散熱效果與減少發光二極體燈絲的暗區效果。本新型的發光二極體燈絲裝配在一透明燈殼之中,具有改進散熱能力和減少暗區的功效。 The invention discloses a light-emitting diode filament and a light-emitting diode filament bulb, wherein the light-emitting diode filament includes: a light-transmitting substrate, at least one LED chip is fixed on the front of the light-transmitting substrate, The two ends of the light-transmittable substrate have a first electrode pin and a second electrode pin connected in series with the light-emitting diode chip, and a phosphor, the phosphor is arranged on the light-transmissive substrate On the front side, the phosphor encapsulates the LED chip and exposes the first and second electrode pins; a heat-emitting light-emitting layer is formed on the back or front side of the transparent substrate. Made of electromagnetic wave powder in the radiation band. The excitation light source generated by the LED chip can directly excite the phosphor to emit light, and part of the excitation light source of the LED chip can pass through the transparent substrate to excite the heat-emitting light-emitting layer to emit light, thereby reducing the dark area on the back of the light-emitting diode filament and dissipating heat The electromagnetic wave powder contained in the light-emitting layer can be thermally excited to generate heat radiation to improve the heat dissipation effect. The infrared light to visible light up-conversion material contained in the heat dissipation light-emitting layer can further absorb infrared light thermal radiation to generate visible light, and simultaneously improve the heat dissipation effect of the light-emitting diode filament With the effect of reducing the dark area of the LED filament. The novel light-emitting diode filament is assembled in a transparent lamp housing, which has the effect of improving heat dissipation capacity and reducing dark areas.
Description
本新型涉及一種燈泡的構造,特別是一種具有改進散熱能力和減少暗區之功效的發光二極體燈絲和發光二極體燈絲燈泡。 The invention relates to a structure of a light bulb, in particular to a light-emitting diode filament and a light-emitting diode filament bulb with the effect of improving heat dissipation capacity and reducing dark areas.
由於發光二極體的優異特性,已有廠商以發光二極體晶片(LED晶片)製成發光二極體燈絲並封裝入透明燈泡,用以取代傳統的白熾燈泡。 Due to the excellent characteristics of light-emitting diodes, existing manufacturers use light-emitting diode chips (LED chips) to make light-emitting diode filaments and package them in transparent bulbs to replace traditional incandescent bulbs.
在已公開的歐洲專利EP2535640B1,提出了一種發光二極體燈泡以及可以產生4 PI光的發光二極體燈絲,這種發光二極體燈絲包括:一透明基材,固定在透明基材的表面的LED晶片,以及包覆整個透明基材和LED晶片的螢光粉膠層(luminescent powder layer),從這種發光二極體燈絲的橫斷面觀查,螢光粉膠層是在整個透明基材和LED晶片的外圍連續地圍繞一圈,因此該專利技術聲稱LED晶片產生的激發光源可以激發螢光粉膠層發光就能產生4 PI光。 In the published European patent EP2535640B1, a light-emitting diode bulb and a light-emitting diode filament that can produce 4 PI light are proposed. The light-emitting diode filament includes: a transparent substrate fixed on the surface of the transparent substrate LED chip, and the luminescent powder layer covering the entire transparent substrate and LED chip, viewed from the cross-section of this light-emitting diode filament, the phosphor powder layer is transparent throughout The base material and the periphery of the LED chip are continuously surrounded by a circle, so the patented technology claims that the excitation light source generated by the LED chip can excite the phosphor powder layer to emit light and generate 4 PI light.
發光二極體燈絲燈泡比傳統的白熾燈泡雖然有更佳的發光性能表現,但是發光二極體產生的熱量會嚴重影響發光二極體的壽命,因此,如何有效地散熱是發光二極體燈絲燈泡必需克服的重要問題之一。 Light-emitting diode filament bulbs have better luminous performance than traditional incandescent bulbs, but the heat generated by the light-emitting diodes will seriously affect the life of the light-emitting diodes. Therefore, how to effectively dissipate heat is the light-emitting diode filament One of the important problems that the light bulb must overcome.
為解決發光二極體燈絲燈泡的散熱問題,在本發明人獲得授權的美國專利US9,933,121B2,提出一種製造具熱輻射散熱燈絲之LED燈 泡的方法,包含:提供一基材,在基材的兩端具有導電部用以電性連接電子電路;在基材的前側(front side)固定LED晶片、導線和螢光體形成LED燈絲(LED filament);在基材的背面塗佈熱輻射散熱油墨(thermal radiation heat dissipation ink),然後乾燥塗佈在基材背面的熱輻射散熱油墨以形成熱輻射散熱膜(thermal radiation dissipation film)。通過基材背面的熱輻射散熱膜,可以改進LED燈絲的散熱能力。 In order to solve the heat dissipation problem of the light-emitting diode filament light bulb, in the US patent US 9,933,121B2 authorized by the present inventor, an LED lamp with heat radiation heat dissipation filament is proposed. The method of bubbling includes: providing a substrate with conductive parts at both ends of the substrate for electrically connecting electronic circuits; fixing an LED chip, a wire and a phosphor on the front side of the substrate to form an LED filament ( LED filament); apply thermal radiation heat dissipation ink on the back of the substrate, and then dry the thermal radiation heat dissipation ink coated on the back of the substrate to form a thermal radiation dissipation film. Through the heat radiation film on the back of the substrate, the heat dissipation capacity of the LED filament can be improved.
在本發明人獲得授權的歐洲專利EP3208514B1,提出了一種發光二極體燈絲燈泡的構造,包括:燈頭、燈絲支架、透明燈殼和至少一發光二極體燈絲,燈頭可連接外部電源用以提供驅動發光二極體燈絲的驅動電力,燈絲支架和燈頭電性連接,燈絲支架包括二金屬支架,發光二極體燈絲具有二個電極引腳分別和二金屬支架電性連接形成驅動迴路,其中二金屬支架的表面塗覆含有石墨烯(graphene)或氮化硼(BN)的塗料形成一散熱及黑體輻射層,發光二極體燈絲的基材的背面具有熱輻射散熱膜;透過金屬支架、散熱及黑體輻射層以及熱輻射散熱膜,可以增加燈絲支架和發光二極體燈絲的導熱性及熱輻射面積,促進透明燈殼內部氣體的熱對流以及提高熱輻射能力,改進發光二極體燈絲燈泡的散熱及熱輻射效果。 In the European patent EP3208514B1 authorized by the present inventor, a structure of a light-emitting diode filament bulb is proposed, including: a base, a filament holder, a transparent lamp housing and at least one light-emitting diode filament, and the base can be connected to an external power source to provide The driving power for driving the light-emitting diode filament, the filament holder and the lamp cap are electrically connected, the filament holder includes a two-metal bracket, and the light-emitting diode filament has two electrode pins electrically connected to the two-metal bracket to form a drive circuit, of which two The surface of the metal support is coated with a paint containing graphene or boron nitride (BN) to form a heat dissipation and black body radiation layer. The back of the base material of the light-emitting diode filament has a heat radiation heat dissipation film; The black body radiation layer and the heat radiation heat dissipation film can increase the thermal conductivity and heat radiation area of the filament holder and the light-emitting diode filament, promote the heat convection of the gas inside the transparent lamp housing and improve the heat radiation ability, and improve the light-emitting diode filament bulb The effect of heat dissipation and heat radiation.
前述的US9,933,121B2和EP3208514B1專利技術可以解決發光二極體燈絲燈泡的散熱問題,但是在發光二極體燈絲的基材的背面仍然存在暗區(dark region)的現象。 The aforementioned US9,933,121B2 and EP3208514B1 patented technologies can solve the heat dissipation problem of the light-emitting diode filament light bulb, but a dark region phenomenon still exists on the back of the base material of the light-emitting diode filament.
本新型所要解決的技術問題在於提供一種改進散熱能力和減少暗區的發光二極體燈絲和發光二極體燈絲燈泡。 The technical problem to be solved by the present invention is to provide a light-emitting diode filament and a light-emitting diode filament bulb with improved heat dissipation capacity and reduced dark area.
為解決上述的技術問題,本新型發光二極體燈絲的一種實施例構造,包括:一可透光的基材,至少一LED晶片固定在可透光的基材的正面,在可透光的基材的兩端具有一第一電極引腳和一第二電極引腳和LED晶片串聯,一散熱發光層形成在可透光的基材的背面或正面,以及一螢光體,所述螢光體配置(disposed on)在可透光的基材的正面,螢光體將LED晶片封裝於其中並露出第一電極引腳和第二電極引腳;其中散熱發光層是由電磁波輻射顆粒所製成,LED晶片產生的激發光源可以直接激發螢光體發光,LED晶片的部分激發光源可以穿過可透光的基材之後激發散熱發光層發光;其中該散熱發光層的該不同電磁波輻射顆粒可以受前述的部份晶片激發光源的激發而發光,也可以由熱激發而產生熱輻射,以及可以進一步吸收紅外光熱輻射線而發出可見光,進而改進發光二極體燈絲的散熱能力和減少暗區。 In order to solve the above technical problems, an embodiment of the structure of the novel light-emitting diode filament includes: a transparent substrate, at least one LED chip is fixed on the front of the transparent substrate, and the transparent substrate Both ends of the substrate have a first electrode pin and a second electrode pin connected in series with the LED chip, a heat-emitting light-emitting layer is formed on the back or front of the transparent substrate, and a phosphor, the phosphor The light body is disposed on the front surface of the light-transmissive substrate, the phosphor encapsulates the LED chip in it and exposes the first electrode pin and the second electrode pin; wherein the heat-emitting light-emitting layer is made of electromagnetic wave radiation particles The excitation light source generated by the LED chip can directly excite the phosphor to emit light, and part of the excitation light source of the LED chip can pass through the light-transmissive substrate to excite the heat-emitting light-emitting layer to emit light; wherein the different electromagnetic wave radiation particles of the heat-emitting light-emitting layer It can be stimulated by some of the aforementioned chip excitation light sources to emit light, or can be thermally excited to generate thermal radiation, and can further absorb infrared light thermal radiation to emit visible light, thereby improving the heat dissipation capacity of the light-emitting diode filament and reducing dark areas .
本新型的一方面包括一種發光二極體燈絲燈泡,包括:一透明燈殼、一燈頭、一驅動器、至少一燈絲支架和至少一發光二極體燈絲; 其中透明燈殼的內部中空形成密封的一腔室,透明殼體可以透光並且具有一排氣管用以連通腔室和透明燈殼的外部,燈頭連接在透明燈殼的底端,燈頭具有一第一電源端和一第二電源端用以電性連接外部電源; 其中發光二極體燈絲包括:一可透光的基材,至少一LED晶片固定在可透光的基材的正面,在可透光的基材的兩端具有一第一電極引腳和一第二電極引腳和LED晶片串聯,一散熱發光層形成在可透光的基材的背面,以及一螢光體,螢光體配置(disposed on)在可透光的基材的正 面,螢光體將LED晶片封裝於其中並露出第一電極引腳和第二電極引腳;其中散熱發光層是由包含多種不同輻射波段的電磁波粉體(包含螢光粉、熱輻射粉及紅外光轉可見光的上轉材料)所製成,LED晶片產生的激發光源可以直接激發螢光體發光,LED晶片產生的部分激發光源可以穿過可透光的基材之後激發散熱發光層發光;其中散熱發光層的電磁波粉體可以受LED晶片產生的部份激發光源的激發而發光,或是可以由熱激發而產生熱輻射,或是可以吸收紅外光熱輻射線而發出可見光,進而改進發光二極體燈絲的散熱能力和減少暗區。 One aspect of the present invention includes a light-emitting diode filament light bulb, including: a transparent lamp housing, a base, a driver, at least one filament support, and at least one light-emitting diode filament; The inside of the transparent lamp housing is hollow to form a sealed chamber. The transparent housing can transmit light and has an exhaust pipe for connecting the chamber and the outside of the transparent lamp housing. The lamp head is connected to the bottom end of the transparent lamp housing. The lamp head has a The first power terminal and a second power terminal are used to electrically connect to an external power source; The light-emitting diode filament includes: a transparent substrate, at least one LED chip is fixed on the front of the transparent substrate, and a first electrode pin and a The second electrode pin is connected in series with the LED chip, a heat-dissipating light-emitting layer is formed on the back of the transparent substrate, and a phosphor is disposed on the front of the transparent substrate On the surface, the phosphor encapsulates the LED chip and exposes the first electrode pin and the second electrode pin; the heat-emitting light-emitting layer is composed of electromagnetic wave powder (including fluorescent powder, heat radiation powder and Made of infrared light to visible light), the excitation light source generated by the LED chip can directly excite the phosphor to emit light, and part of the excitation light source generated by the LED chip can pass through the transparent substrate and then excite the heat-emitting light-emitting layer to emit light; The electromagnetic wave powder of the heat dissipation luminescent layer can be excited by part of the excitation light source generated by the LED chip to emit light, or can be thermally excited to generate thermal radiation, or can absorb infrared light thermal radiation to emit visible light, thereby improving light emission. The heat dissipation capacity of the polar body filament and reduce dark areas.
其中可透光的基材包括:陶瓷基材、玻璃基材、藍寶石基材、塑膠基材和紙基材其中的任一種。 The transparent substrates include ceramic substrates, glass substrates, sapphire substrates, plastic substrates and paper substrates.
其中可透光的基材包括:可彎曲的陶瓷基材、可彎曲的玻璃基材、可彎曲塑膠和可彎曲紙基材其中的任一種。 The light-transmissible substrates include: any of flexible ceramic substrates, flexible glass substrates, flexible plastics and flexible paper substrates.
其中散熱發光層的電磁波粉體包含螢光粉、熱輻射粉與紅外光轉可見光的上轉材料(IR to Visible up-conversion materials)其中的任一種或其組合。 The electromagnetic wave powder of the heat dissipation luminescent layer includes any one or a combination of phosphor powder, heat radiation powder and IR to Visible up-conversion materials.
其中散熱發光層的螢光粉包括:鋁酸鹽螢光粉、氮化物螢光粉、氮氧化物螢光粉、矽酸鹽螢光粉、氟化物螢光粉、錫硫合金化合物螢光粉和量子點螢光粉其中的任一種或其組合。 The phosphors of the heat-emitting luminescent layer include: aluminate phosphors, nitride phosphors, nitrogen oxide phosphors, silicate phosphors, fluoride phosphors, tin-sulfur alloy phosphors And any one or combination of quantum dot phosphors.
其中散熱發光層的熱輻射粉包括:碳材料、金屬顆粒(metal particles)、陶瓷粉體和熱輻射膠材其中的任一種或其組合。 The heat radiation powder of the heat dissipation luminescent layer includes any one or a combination of carbon material, metal particles, ceramic powder and heat radiation glue.
其中散熱發光層的紅外光轉可見光的上轉材料包括:稀土離子摻雜的鹵化物材料體系、氟化合物材料體系、氟氧化合物材料體系、氧 化物材料體系、含硫化物材料體系、氧化矽與磷酸鹽類其中的任一種或其組合。紅外光轉可見光的上轉材料可以經由紅外光熱輻射線的激發而發出可見光。 The up-conversion materials of infrared light to visible light of the heat-emitting luminescent layer include: halide material system doped with rare earth ions, fluorine compound material system, oxyfluoride material system, oxygen Any one or a combination of a chemical compound material system, a sulfide-containing material system, silicon oxide, and phosphates. The up-converting material from infrared light to visible light can emit visible light through excitation of infrared light thermal radiation.
其中紅外光轉可見光的上轉材料進一步包括:氟砷鹽酸基玻璃(Fluorinated arsenic chloride-based glass)、氟氧化物玻璃(Al2O3,CdF2,PbF2,YF3)、ZBLAN玻璃(Nd3Pb5M3F19:M=Al,Ti,V,Cr,Fe,Ga;Ho3BaY2F8;Pr3K2YF5)、AlF3基玻璃、氟鋁(Alumina Yttrium Floride)系統中高摻雜(ErF3)、氟鋯鋁(Alumina Zirconium Floride)玻璃系統中高摻雜(ErF3)、Er3Cs3Lu2Br9玻璃、GGSX(Pr3GeS2Ga2S3CsCl)玻璃、PGPNO(Pr3GeO2PbONb2O5)玻璃、Er3TeO玻璃、La2S3玻璃、磷酸鹽(Phosphate)玻璃、氟硼酸鹽(Fluoro-Boric acid salt)玻璃、及碲酸鹽(Tellurium acid salt)玻璃其中的任一種或其組合。 The up-conversion materials from infrared light to visible light further include: Fluorinated arsenic chloride-based glass, oxyfluoride glass (Al2O3, CdF2, PbF2, YF3), ZBLAN glass (Nd3Pb5M3F19: M=Al, Ti , V, Cr, Fe, Ga; Ho3BaY2F8; Pr3K2YF5), AlF3 based glass, high doping (ErF3) in aluminum fluoride (Alumina Yttrium Floride) system, high doping (ErF3) in aluminum fluoride (Alumina Zirconium Floride) glass system, Er3Cs3Lu2Br9 glass, GGSX (Pr3GeS2Ga2S3CsCl) glass, PGPNO (Pr3GeO2PbONb2O5) glass, Er3TeO glass, La2S3 glass, phosphate glass, Fluoro-Boric acid salt glass, and Tellurium acid salt glass Any one of them or a combination thereof.
作為所述熱輻射粉的碳材料包括:石墨烯(graphene)、碳黑(carbon black)、石墨(graphite)、碳納米管(carbon nanotubes)、碳六十、活性碳(activated carbon)、生物碳、竹炭和煤灰其中的任一種或其組合。 The carbon materials as the heat radiation powder include: graphene, carbon black, graphite, carbon nanotubes, carbon sixty, activated carbon, biocarbon , Any of bamboo charcoal and coal ash or a combination thereof.
作為所述熱輻射粉的金屬顆粒包括:銅(Cu)、鎳(Ni)、鋅(Zn)、鐵(Fe)、鈷(Co)、銀(Ag)、金(Au)、鉑(Pt)和它們的合金其中的任一種或其組合。 The metal particles as the heat radiation powder include: copper (Cu), nickel (Ni), zinc (Zn), iron (Fe), cobalt (Co), silver (Ag), gold (Au), platinum (Pt) And any one or combination of their alloys.
作為所述熱輻射粉的陶瓷粉體包括:氧化物陶瓷、氮化物陶瓷、碳化物陶瓷、硼化物陶瓷、矽化物陶瓷、氟化物陶瓷、硫化物陶瓷和紅外光輻射粉末(infrared-ray radiation powders)其中的任一種或其組合。 The ceramic powders as the thermal radiation powder include: oxide ceramics, nitride ceramics, carbide ceramics, boride ceramics, silicide ceramics, fluoride ceramics, sulfide ceramics and infrared-ray radiation powders ) Any one or a combination thereof.
作為所述熱輻射粉的熱輻射膠材包括:矽膠、壓克力樹脂、 環氧樹脂、聚氨酯樹脂和聚醯亞胺樹脂其中的任一種或其組合。 The heat radiation adhesive material as the heat radiation powder includes: silicone rubber, acrylic resin, Any one or combination of epoxy resin, polyurethane resin and polyimide resin.
作為本新型的一種優選實施例,所述腔室之中填充有低黏度系數和高導熱系數的氣體,所述氣體包括:氫(H2)、氦(He)和氬(Ar)其中的任一種或其混合。 As a preferred embodiment of the present invention, the chamber is filled with a gas with a low viscosity coefficient and a high thermal conductivity, the gas includes any one of hydrogen (H2), helium (He), and argon (Ar) Or a mixture of them.
作為本新型的一種優選實施例,其中透明燈殼的腔室是真空或低壓的密封狀態。 As a preferred embodiment of the present invention, the cavity of the transparent lamp housing is in a sealed state of vacuum or low pressure.
其中所述的低壓是0.01至0.1MPa。 The low pressure mentioned therein is 0.01 to 0.1 MPa.
作為本新型的一種優選實施例,其中透明燈殼的腔室是低壓或常壓的密封狀態,腔室之中填充有低黏度系數和高導熱系數的氣體,氣體包括:氫(H2)、氦(He)和氬(Ar)其中的任一種或其混合。 As a preferred embodiment of the present invention, the chamber of the transparent lamp housing is in a sealed state of low pressure or normal pressure, and the chamber is filled with a gas of low viscosity coefficient and high thermal conductivity. The gas includes: hydrogen (H2), helium Any one of (He) and argon (Ar) or a mixture thereof.
本新型的有益效果在於,本新型提出的發光二極體燈絲裝可以藉由可透光的基材的背面的散熱發光層,改進散熱能力和減少暗區。 The beneficial effect of the present invention is that the light-emitting diode filament device proposed by the present invention can improve the heat dissipation capacity and reduce the dark area by the heat dissipation light-emitting layer on the back of the light-transmissive substrate.
1‧‧‧發光二極體燈絲 1‧‧‧ LED filament
10‧‧‧可透光的基材 10‧‧‧Transparent substrate
11‧‧‧第一電極引腳 11‧‧‧First electrode pin
12‧‧‧第二電極引腳 12‧‧‧Second electrode pin
20‧‧‧LED晶片 20‧‧‧LED chip
21‧‧‧金屬導線 21‧‧‧Metal wire
22‧‧‧固晶膠 22‧‧‧Solid crystal glue
30‧‧‧散熱發光層 30‧‧‧radiation and light emitting layer
40‧‧‧螢光體 40‧‧‧ phosphor
50‧‧‧透明燈殼 50‧‧‧Transparent lamp housing
51‧‧‧腔室 51‧‧‧ chamber
52‧‧‧排氣管 52‧‧‧Exhaust pipe
60‧‧‧燈頭 60‧‧‧ lamp holder
61‧‧‧第一電源端 61‧‧‧First power terminal
62‧‧‧第二電源端 62‧‧‧Second power terminal
70‧‧‧驅動器 70‧‧‧Drive
81,82‧‧‧金屬支架 81, 82‧‧‧ Metal bracket
83‧‧‧柱體 83‧‧‧Cylinder
84,85‧‧‧金屬線 84, 85‧‧‧Metal wire
圖1是本新型發光二極體燈絲的一種實施例的斷面構造圖。 FIG. 1 is a cross-sectional structure diagram of an embodiment of the novel light-emitting diode filament.
圖2是圖1在A-A位置的斷面構造圖。 Fig. 2 is a sectional structural view of Fig. 1 at the position A-A.
圖3是本新型發光二極體燈絲的發光動作示意圖。 3 is a schematic view of the light-emitting action of the novel light-emitting diode filament.
圖4-1和圖4-2是本新型發光二極體燈絲的另一種實施例的發光動作示意圖。 Fig. 4-1 and Fig. 4-2 are schematic diagrams of light-emitting actions of another embodiment of the novel light-emitting diode filament.
圖5是本新型發光二極體燈絲燈泡的一種實施例的斷面構造圖。 5 is a cross-sectional structural view of an embodiment of the novel light-emitting diode filament bulb.
圖6是本新型發光二極體燈絲燈泡的另一種實施例的斷面構造圖。 6 is a cross-sectional structural view of another embodiment of the novel light-emitting diode filament bulb.
在下文的實施方式中所述的位置關係,包括:上,下,左和 右,若無特別指明,皆是以圖式中組件繪示的方向為基準。 The positional relationships described in the embodiments below include: up, down, left and On the right, unless otherwise specified, they are based on the direction shown by the components in the diagram.
首先請參閱圖1,是本新型發光二極體燈絲1的一種實施例的斷面構造圖。
First, please refer to FIG. 1, which is a cross-sectional structural view of an embodiment of the novel light-emitting
本新型提出的發光二極體燈絲1的一種實施例構造包括:一可透光的基材10,至少一LED晶片20固定在可透光的基材10的正面,在可透光的基材10的兩端具有一第一電極引腳11和一第二電極引腳12和LED晶片20串聯,一散熱發光層30形成在可透光的基材10的背面或正面,散熱發光層30是由包含多種不同輻射波段的電磁波粉體(包含螢光粉、熱輻射粉及紅外光轉可見光的上轉材料其中的任一種或其組合)所製成;以及一螢光體40,螢光體40配置(disposed on)在可透光的基材10的正面,例如使用含有螢光粉的螢光膠塗佈在可透光的基材10的正面以形成螢光體40,螢光體40將LED晶片20封裝於其中,第一電極引腳11和第二電極引腳12露出螢光體20之外;發光二極體燈絲燈泡的發光動作如圖3所示,LED晶片20產生的激發光源(激發光源通常為藍光,圖3中以虛線繪示)可以直接激發螢光體40發光產生照明用的光線(通常為白光,圖3中以實線繪示),LED晶片20的部分激發光源可以穿過可透光的基材10之後激發散熱發光層30發光產生照明用的光線(通常為白光,圖3中以實線繪示),其中前述的部份激發光源可以激發散熱發光層30的螢光粉發光,因此散熱發光層30可以在發光二極體燈絲1的背面產生光線,減少發光二極體燈絲1的暗區,而散熱發光層30的熱輻射粉可以由熱激發產生熱輻射,用以增進發光二極體燈絲1的散熱效果。更進一步,散熱發光層30的紅外光轉可見光的上轉材料可以吸收紅外光熱輻射產生可見光,用以同步增進發光二極體燈絲1的散
熱效果與減少發光二極體燈絲1的暗區。
An embodiment of the light-emitting diode filament 1 proposed by the present invention includes a transparent substrate 10, at least one LED chip 20 fixed on the front of the transparent substrate 10, and the transparent substrate Both ends of 10 have a first electrode pin 11 and a second electrode pin 12 connected in series with the LED chip 20, a heat-emitting light-emitting layer 30 is formed on the back or front of the transparent substrate 10, the heat-emitting light-emitting layer 30 is It is made of electromagnetic wave powder (including any one or a combination of phosphor powder, thermal radiation powder and infrared-to-visible up-converting material) containing a variety of different radiation bands; and a phosphor 40, phosphor 40 is disposed on the front surface of the light-transmissible substrate 10, for example, a fluorescent glue containing phosphor is coated on the front surface of the light-transmissive substrate 10 to form the phosphor 40, and the phosphor 40 The LED chip 20 is packaged therein, and the first electrode pin 11 and the second electrode pin 12 are exposed outside the phosphor 20; the light-emitting action of the light-emitting diode filament bulb is shown in FIG. 3, the excitation generated by the LED chip 20 The light source (excitation light source is usually blue light, shown with a broken line in FIG. 3) can directly excite the phosphor 40 to emit light to generate light for illumination (usually white light, shown with a solid line in FIG. 3), and the LED chip 20 is partially excited The light source can pass through the light-transmissive substrate 10 and then excite the heat-emitting light-emitting layer 30 to emit light to generate light for illumination (usually white light, shown with a solid line in FIG. 3), wherein the aforementioned partial excitation light source can excite the heat-emitting light-emitting layer The fluorescent powder of 30 emits light, so the heat-emitting light-emitting layer 30 can generate light on the back of the light-emitting diode filament 1 to reduce the dark area of the light-emitting diode filament 1, and the heat radiation powder of the heat-emitting light-emitting layer 30 can be generated by thermal excitation The heat radiation is used to improve the heat dissipation effect of the LED filament 1. Furthermore, the infrared-to-visible up-conversion material of the heat dissipation light-emitting
在可透光的基材10的背面或正面形成散熱發光層30的一種實施方式包括:將電磁波粉體加入矽膠中混合,再用塗膠或點膠的方式塗佈在可透光的基材10的背面或正面,進而形成散熱發光層30;另一種可行的實施方式包括:在可透光的基材10的背面或正面,將電磁波粉體直接和可透光的基材10一起燒結在可透光的基材10的背面。
One embodiment of forming the heat-radiating light-emitting
請參閱圖4-1和圖4-2,是本新型發光二極體燈絲的另一種實施例的發光動作示意圖。其中圖4-1的LED晶片20是一種有背鍍晶片,LED晶片20產生的激發光源(激發光源通常為藍光,圖4-1中以虛線繪示)向兩側發射,LED晶片20產生的激發光源可以直接激發螢光體40中含有的螢光粉發光產生照明用的光線(圖4-1中以實線繪示),例如混合成白光;LED晶片20的部分激發光源可以穿過可透光的基材10之後激發散熱發光層30中含有的螢光粉發光。圖4-2的LED晶片20是一種無背鍍晶片,LED晶片20產生的激發光源(激發光源通常為藍光,圖4-1中以虛線繪示)可以不受遮蔽地向四周發射,LED晶片20產生的激發光源可以直接激發螢光體40中含有的螢光粉發光產生照明用的光線(圖4-2中以實線繪示),例如混合成白光;LED晶片20的部分激發光源可以穿過可透光的基材10之後激發散熱發光層30中含有的螢光粉發光。
Please refer to FIGS. 4-1 and 4-2, which are schematic diagrams of light-emitting actions of another embodiment of the novel light-emitting diode filament. The
可透光的基材10可以是使用透明或半透明的材料製造,所述製造可透光的基材10的材料的一種較佳實施方式包括:陶瓷基材、玻璃基材、藍寶石基材、塑膠基材和紙基材其中的任一種。在另一種較佳的實施方式,製造可透光的基材10的材料是可彎曲的材料,包括:可彎曲的陶瓷
基材、可彎曲的玻璃基材、可彎曲塑膠和可彎曲紙基材其中的任一種,因此,發光二極體燈絲1可以彎曲,適合應用在具有弧形的透明燈殻50的發光二極體燈絲燈泡(見圖6)。
The
作為本新型的一種優選實施方式,發光二極體燈絲1包括數個串聯的LED晶片20(見圖1),LED晶片20使用透明的固晶膠22固定在可透光的基材10的正面,任二個相鄰的LED晶片20之間使用金屬導線21串聯,LED晶片20可以是採用水平結構(horizontal(normal)LED structure)、垂直結構(Vertical LED structure)和倒裝結構(Flip Chip LED structure)其中的任一種封裝結構製成的LED晶片20,較佳的一種實施例,LED晶片20的寬度小於可透光的基材10的橫斷面的寬度,這樣配置在可透光的基材10的正面的螢光體40可以更好的包覆住LED晶片20和金屬導線21,而且LED晶片20產生的部分激發光源也能夠穿過可透光的基材10之後激發散熱發光層30發光。
As a preferred embodiment of the present invention, the light-emitting
散熱發光層30是由包含多種不同輻射波段的電磁波粉體所製成,其中電磁波粉體包含螢光粉、熱輻射粉與紅外光轉可見光的上轉材料其中的任一種或其組合。
The heat
其中散熱發光層30的螢光粉包括:鋁酸鹽螢光粉、氮化物螢光粉、氮氧化物螢光粉、矽酸鹽螢光粉、氟化物螢光粉、錫硫合金化合物螢光粉和量子點螢光粉其中的任一種或其組合。
The phosphors of the heat-emitting light-emitting
其中散熱發光層30的熱輻射粉包括:碳材料、金屬顆粒(metal particles)、陶瓷粉體和熱輻射膠材其中的任一種或其組合,這種熱輻射粉基本上是多種可以產生不同電磁波段的熱輻射粉,這種熱輻射粉可以被發光二極體燈絲1的產生的熱激發產生熱輻射,用以增進發光二極體燈絲
1的散熱效果。
The heat radiation powder of the heat dissipation light-emitting
其中散熱發光層30的紅外光轉可見光的上轉材料包括:稀土離子摻雜的鹵化物材料體系、氟化合物材料體系、氟氧化合物材料體系、氧化物材料體系、含硫化物材料體系、氧化矽與磷酸鹽類其中的任一種或其組合。紅外光轉可見光的上轉材料可以經由紅外光熱輻射線的激發而發出可見光,同步增進發光二極體燈絲1的散熱效果。
The infrared-to-visible upconversion materials of the heat-emitting
其中紅外光轉可見光的上轉材料進一步包括:氟砷鹽酸基玻璃(Fluorinated arsenic chloride-based glass)、氟氧化物玻璃(Al2O3,CdF2,PbF2,YF3)、ZBLAN玻璃(Nd3Pb5M3F19:M=Al,Ti,V,Cr,Fe,Ga;Ho3BaY2F8;Pr3K2YF5)、AlF3基玻璃、氟鋁(Alumina Yttrium Floride)系統中高摻雜(ErF3)、氟鋯鋁(Alumina Zirconium Floride)玻璃系統中高摻雜(ErF3)、Er3Cs3Lu2Br9玻璃、GGSX(Pr3GeS2Ga2S3CsCl)玻璃、PGPNO(Pr3GeO2PbONb2O5)玻璃、Er3TeO玻璃、La2S3玻璃、磷酸鹽(Phosphate)玻璃、氟硼酸鹽(Fluoro-Boric acid salt)玻璃、及碲酸鹽(Tellurium acid salt)玻璃其中的任一種或其組合。 The up-conversion materials from infrared light to visible light further include: Fluorinated arsenic chloride-based glass, oxyfluoride glass (Al2O3, CdF2, PbF2, YF3), ZBLAN glass (Nd3Pb5M3F19: M=Al, Ti , V, Cr, Fe, Ga; Ho3BaY2F8; Pr3K2YF5), AlF3 based glass, high doping (ErF3) in aluminum fluoride (Alumina Yttrium Floride) system, high doping (ErF3) in aluminum fluoride (Alumina Zirconium Floride) glass system, Er3Cs3Lu2Br9 glass, GGSX (Pr3GeS2Ga2S3CsCl) glass, PGPNO (Pr3GeO2PbONb2O5) glass, Er3TeO glass, La2S3 glass, phosphate glass, Fluoro-Boric acid salt glass, and Tellurium acid salt glass Any one of them or a combination thereof.
其中作為熱輻射粉的碳材料包括:石墨烯(graphene)、碳黑(carbon black)、石墨(graphite)、碳納米管(carbon nanotubes)、碳六十、活性碳(activated carbon)、生物碳、竹炭和煤灰其中的任一種或其組合。 The carbon materials used as heat radiation powder include: graphene, carbon black, graphite, carbon nanotubes, carbon sixty, activated carbon, biocarbon, Any one or combination of bamboo charcoal and coal ash.
其中作為熱輻射粉的金屬顆粒包括:銅(Cu)、鎳(Ni)、鋅(Zn)、鐵(Fe)、鈷(Co)、銀(Ag)、金(Au)、鉑(Pt)和它們的合金其中的任一種或其組合。 The metal particles used as heat radiation powder include: copper (Cu), nickel (Ni), zinc (Zn), iron (Fe), cobalt (Co), silver (Ag), gold (Au), platinum (Pt) and Any one or a combination of their alloys.
其中作為熱輻射粉的陶瓷粉體包括:氧化物陶瓷、氮化物陶 瓷、碳化物陶瓷、硼化物陶瓷、矽化物陶瓷、氟化物陶瓷、硫化物陶瓷和其他紅外光輻射粉末(infrared-ray radiation powders)其中的任一種或其組合。 Among them, the ceramic powder used as heat radiation powder includes: oxide ceramics and nitride ceramics Any one or a combination of porcelain, carbide ceramic, boride ceramic, silicide ceramic, fluoride ceramic, sulfide ceramic, and other infrared-ray radiation powders.
其中作為熱輻射粉的熱輻射膠材包括:矽膠、壓克力樹脂、環氧樹脂、聚氨酯樹脂與聚醯亞胺樹脂其中的任一種或其組合。 The heat radiation adhesive material as the heat radiation powder includes any one or a combination of silicone rubber, acrylic resin, epoxy resin, polyurethane resin and polyimide resin.
請參閱圖5,是本新型發光二極體燈絲燈泡的一種實施例的斷面構造圖。發光二極體燈絲燈泡的一種實施例構造,包括:一透明燈殼50、一燈頭60、一驅動器70、至少一燈絲支架和至少一個前述的發光二極體燈絲1。
Please refer to FIG. 5, which is a cross-sectional structure diagram of an embodiment of the novel light-emitting diode filament bulb. An embodiment structure of a light-emitting diode filament bulb includes: a
其中透明燈殼50的內部中空形成密封的一腔室51,透明殼體50可以透光並且具有一排氣管52用以連通腔室51和透明燈殼50的外部,燈頭60連接在透明燈殼50的底端,燈頭60具有一第一電源端61和一第二電源端62用以電性連接外部電源。其中一種實施例構造,是利用燈頭60密封透明燈殼50的排氣管52,在其他的實施例也可以藉由密封組件密封透明燈殼50的排氣管52。
The interior of the
驅動器70置入燈頭60之中,驅動器70介於透明燈殼50和燈頭60之間,驅動器70可以直接或間接地電性連接發光二極體燈絲1的第一電極引腳11和第二電極引腳12,以及燈頭60的第一電源端61和第二電源端62,驅動器70用以將外部電源轉換成為驅動發光二極體燈絲1的驅動電力。
The
作為本新型的一種優選實施方式,其中透明燈殼50的腔室51是真空或是0.01至0.1MPa低壓的密封狀態。
As a preferred embodiment of the present invention, the
作為本新型的另一種優選實施方式,透明燈殼50的腔室51是低壓或常壓的密封狀態,而且在腔室51之中填充有低黏度系數和高導熱系
數的氣體,氣體包括:氫(H2)、氦(He)和氬(Ar)其中的任一種或其混合,可以增加發光二極體燈絲1的導熱性及熱輻射面積,具有促進透明燈殼50內部氣體的熱對流以及提高熱輻射的功效,進而改進發光二極體燈絲燈泡的散熱及熱輻射效果。
As another preferred embodiment of the present invention, the
所述燈絲支架的一種實施例構造如圖5所示,燈絲支架包括二個金屬支架81和82,二個金屬支架81和82穿過透明燈殼50並且和透明燈殼50緊密結合在一起而不會影響腔室51的密封狀態,一般而言透明燈殼50是使用玻璃或塑膠材料製造,可以在形成透明燈殼50的同時和二個金屬支架81和82緊密結合,二個金屬支架81和82的頂端進入透明燈殼50的腔室51用以電性連接發光二極體燈絲1的第一電極引腳11和第二電極引腳12,二個金屬支架81和82的底端穿過透明燈殼50之後電性連接驅動器70,驅動器70就可以藉由二個金屬支架81和82間接地電性連接發光二極體燈絲1的第一電極引腳11和第二電極引腳12。
An embodiment of the filament support is shown in FIG. 5. The filament support includes two metal supports 81 and 82. The two metal supports 81 and 82 pass through the
燈絲支架的另一種實施例構造如圖6所示,燈絲支架包括延伸入腔室51的一柱體83和二條穿過柱體83的金屬線84和85,較佳的一種實施方式是在使用玻璃或塑膠製作透明燈殼50的同時形成柱體83,這樣柱體83可以和透明燈殼50結合成一體,二條金屬線84和85穿過柱體83並且和柱體83緊密結合在一起而不會影響腔室51的密封狀態,二條金屬線84和85的底端穿過柱體83之後電性連接驅動器70,二條金屬線84和85的頂端進入透明燈殼50的腔室51用以電性連接發光二極體燈絲1的第一電極引腳11和第二電極引腳12。
Another example structure of the filament holder is shown in FIG. 6. The filament holder includes a
雖然本新型已通過上述的實施方式公開如上,然其並非用以限定本新型,本領域技術人員,在不脫離本新型的精神和範圍內,當可作些 許的更動與潤飾,因此本新型的專利保護範圍須視本申請的權利要求所界定者為准。 Although the present invention has been disclosed as above through the above-mentioned embodiments, it is not intended to limit the present invention. Those skilled in the art can do something without departing from the spirit and scope of the present invention Xu's changes and retouching, so the scope of patent protection for this new model is subject to the definition in the claims of this application.
1‧‧‧發光二極體燈絲 1‧‧‧ LED filament
10‧‧‧可透光的基材 10‧‧‧Transparent substrate
20‧‧‧LED晶片 20‧‧‧LED chip
22‧‧‧固晶膠 22‧‧‧Solid crystal glue
30‧‧‧散熱發光層 30‧‧‧heat-emitting light-emitting layer
40‧‧‧螢光體 40‧‧‧ phosphor
Claims (27)
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CN201811127617.4 | 2018-09-27 | ||
CN201811127617.4A CN110957307A (en) | 2018-09-27 | 2018-09-27 | LED filament and LED filament bulb |
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TW108204484U TWM594672U (en) | 2018-09-27 | 2019-04-12 | LED filament structure and LED light bulb having the same |
TW108112831A TW202013775A (en) | 2018-09-27 | 2019-04-12 | Filament struccture and led light bulb having the same |
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CN (1) | CN110957307A (en) |
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WO2012031533A1 (en) * | 2010-09-08 | 2012-03-15 | 浙江锐迪生光电有限公司 | Led lamp bulb and led lighting bar capable of emitting light over 4π |
US20120217862A1 (en) * | 2010-12-24 | 2012-08-30 | Panasonic Corporation | Light bulb shaped lamp and lighting apparatus |
CN202058732U (en) * | 2011-03-11 | 2011-11-30 | 义乌市菲莱特电子有限公司 | High-power LED (light-emitting diode) white light panel with separated chip and fluorescent powder |
JP5864349B2 (en) * | 2012-04-20 | 2016-02-17 | スタンレー電気株式会社 | LED bulb |
JP2014086224A (en) * | 2012-10-22 | 2014-05-12 | Stanley Electric Co Ltd | Led bulb |
TWI599745B (en) * | 2013-09-11 | 2017-09-21 | 晶元光電股份有限公司 | Flexible led assembly and led light bulb |
JP6173607B2 (en) * | 2014-01-20 | 2017-08-02 | フィリップス ライティング ホールディング ビー ヴィ | Illumination device having a foldable housing |
WO2015135817A1 (en) * | 2014-03-13 | 2015-09-17 | Koninklijke Philips N.V. | Filament for lighting device |
JP6320853B2 (en) * | 2014-06-16 | 2018-05-09 | 住友電工プリントサーキット株式会社 | Lighting device |
US9941258B2 (en) * | 2014-12-17 | 2018-04-10 | GE Lighting Solutions, LLC | LED lead frame array for general illumination |
US9933121B2 (en) * | 2015-05-26 | 2018-04-03 | Chung-Ping Lai | Method of making LED light bulb with graphene filament |
CN104916764A (en) * | 2015-06-15 | 2015-09-16 | 刘海兵 | LED lamp wick |
JP6551009B2 (en) * | 2015-07-27 | 2019-07-31 | ウシオ電機株式会社 | Light source device |
CN105042387A (en) * | 2015-08-27 | 2015-11-11 | 刘海兵 | Lamp with LED lamp wick |
CN205065335U (en) * | 2015-09-29 | 2016-03-02 | 慈溪锐恩电子科技有限公司 | Novel light emitting diode (LED) bulb lamp |
GB2547642A (en) * | 2016-02-22 | 2017-08-30 | Bgt Mat Ltd | Light-emitting diode filament lamp |
CN108470811A (en) * | 2018-05-18 | 2018-08-31 | 梁倩 | LED filament lamp package substrate, encapsulating structure and manufacture craft containing the substrate |
CN210692532U (en) * | 2018-09-27 | 2020-06-05 | Bgt材料有限公司 | LED filament and LED filament bulb |
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WO2020063103A1 (en) | 2020-04-02 |
TW202013775A (en) | 2020-04-01 |
JP2020053670A (en) | 2020-04-02 |
JP3221601U (en) | 2019-06-06 |
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