JP2004071908A - Light emitting device - Google Patents

Light emitting device Download PDF

Info

Publication number
JP2004071908A
JP2004071908A JP2002230512A JP2002230512A JP2004071908A JP 2004071908 A JP2004071908 A JP 2004071908A JP 2002230512 A JP2002230512 A JP 2002230512A JP 2002230512 A JP2002230512 A JP 2002230512A JP 2004071908 A JP2004071908 A JP 2004071908A
Authority
JP
Japan
Prior art keywords
light emitting
light
emitting device
phosphor
emitting element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2002230512A
Other languages
Japanese (ja)
Inventor
Masahiro Tokawa
東川　雅弘
Keiji Shibata
柴田　圭史
Nariyuki Yamauchi
山内　得志
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Electric Works Co Ltd
Original Assignee
Matsushita Electric Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Works Ltd filed Critical Matsushita Electric Works Ltd
Priority to JP2002230512A priority Critical patent/JP2004071908A/en
Publication of JP2004071908A publication Critical patent/JP2004071908A/en
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body

Abstract

<P>PROBLEM TO BE SOLVED: To provide a light emitting device hardly generating decrease in luminance accompanying a rise in temperature and improving a luminance effect in the whole device as compared with a conventional case. <P>SOLUTION: The light emitting device 1 includes a light emitting element 2 made of LED chip, and a mold unit 11 formed by molding a cannon ball-shaped resin which is transparent to light emitted from the light emitting element 2. The light emitting element 2 is covered with a wavelength transducing unit 3, the surface of which other than the front one is made of a phosphor thin film layer. The phosphor thin film constituting the wavelength transducing unit 3 has a plurality of nano crystal phosphors with average particle size of 0.1-100nm. In the light emitting device 1, combination light of the light emitted from the light emitting element 2 and the light emitted from the wavelength transducing unit 3 is obtained. <P>COPYRIGHT: (C)2004,JPO

Description

【０００１】
【発明の属する技術分野】
本発明は、発光ダイオードのような発光素子を利用した発光装置に関するものである。
【０００２】
【従来の技術】
近年、窒化ガリウム系化合物半導体（例えば、ＧａＮ、ＩｎＧａＮ、ＡｌＧａＮ、ＩｎＧａＡｌＮなど）を用いた発光素子として、青色光を放射する青色ＬＥＤチップや紫外光を放射する紫外ＬＥＤチップが開発された。これらのＬＥＤチップから放射される光は反値幅の狭い単一波長の発光ピークを有するという特徴がある。一方、これらのＬＥＤチップは、表示用途や照明用途などへの応用が期待されているが、表示用途や照明用途では白色光が必要とされる場合が多い。そこで、青色光あるいは紫外光を放射するＬＥＤチップと、このＬＥＤチップから放射された光の一部を励起源として発光する種々の蛍光体粉末とを組み合わせることにより、白色を含めＬＥＤチップの発光色とは異なる色合いの光を出す発光装置の研究・開発が各所で行われている。この種の発光装置は、小型、軽量、省電力といった長所があり、現在、表示用光源、小型電球の代替光源、液晶パネル用光源などとして広く用いられている。
【０００３】
上述のようなＬＥＤチップと蛍光体粉末とを組み合わせた方式の発光装置は、例えば、特開平５−１５２６０９号公報、特開平７−９９３４５号公報、特開平１０−２４２５１３号公報などに開示されている。こらら各公報に開示された発光装置は、ＬＥＤチップの封止部やモールド部として用いる透光性樹脂（例えば、エポキシ樹脂）中に、ＬＥＤチップから放射された光により励起されて発光する蛍光体粉末を分散している点に共通の特徴がある。このような発光装置では、ＬＥＤチップから放射された光の一部が透光性樹脂をそのまま透過して外部へ放射されるとともに、ＬＥＤチップから放射された光の他の一部により透光性樹脂中の蛍光体粉末が励起され波長変換された光も外部へ放射される。したがって、ＬＥＤチップから放射される光と蛍光体粉末から放射される光との合成光として、例えば白色光を得ることができる。すなわち、ＬＥＤチップが青色ＬＥＤチップの場合には、このＬＥＤチップからの青色光を励起光として黄色の光を発光する蛍光体を組み合わせたり、あるいは赤色の光を発光する蛍光体と緑色に発光する２種類の蛍光体を組み合わせれば、合成光として白色光を得ることができる。また、ＬＥＤチップが紫外ＬＥＤチップの場合には、このＬＥＤチップからの紫外光を励起光としてそれぞれ赤色、緑色、青色を発光する３種類の蛍光体を組み合わせれば、合成光として白色光を得ることができる。このようにして白色光が得られることにより、近年では照明用途へのＬＥＤチップの応用が可能となった。
【０００４】
【発明が解決しようとする課題】
ところで、上述の発光装置における蛍光体粉末には、従来からブラウン管（ＣＲＴ）や蛍光ランプなどに用いられている平均粒子径が数μｍ（概ね５μｍ程度）の蛍光体（以下、バルク蛍光体と称す）を流用しているのが一般的である。
【０００５】
しかしながら、バルク蛍光体はＬＥＤ用に開発されたものではなく、上記発光装置では、十分な発光効率が得られないという不具合があった。すなわち、蛍光ランプの場合では、管内での放電によって発生している紫外線の波長は２５４ｎｍが主体であり、バルク蛍光体もこの励起波長での感度が高くなるように設計されている。一方、従来から提供されている紫外ＬＥＤは、発光波長が例えば３８０ｎｍ前後の比較的長波長のものが多く、上記バルク蛍光体はこのような波長域では励起感度が十分高いとはいえず、発光効率も十分ではない。
【０００６】
したがって、上記発光装置の発光効率を高めるには、ＬＥＤチップから放射される光の波長（励起波長）に対して励起感度の高い新規な組成の蛍光体の発見に委ねるしかないのが現状であるが、このような新材料の発見は極めて困難でハイリスクな取り組みであり、特に企業においては非現実的と言わざるをえない。
【０００７】
また、ＬＥＤチップ１個当たりの発熱量は小さいが、ＬＥＤチップを照明装置に応用する場合には、ＬＥＤチップ１個当たりの光束が比較的小さいので、多数個のＬＥＤチップを集めてモジュール化する必要があり、かなり大きな総発熱量となる。しかも、周知のように、バルク蛍光体は、材料によって程度の違いはあるものの、一般的に高温になると発光効率が低下する特性（温度消光）を有している。したがって、バルク蛍光体とＬＥＤチップとを組み合わせた照明装置において、大光束化のためにＬＥＤチップの集積密度（配置密度）や通電電流を大きくしても、温度消光により十分な光束が得られないという問題もある。
【０００８】
本発明は上記事由に鑑みて為されたものであり、その目的は、従来に比べて装置全体としての発光効率を高めることができるとともに温度上昇に伴う輝度の低下が起こりにくい発光装置を提供することにある。
【０００９】
【課題を解決するための手段】
請求項１の発明は、発光素子と、発光素子の発光によって励起されて所望の波長の光を放射する多数の蛍光物質を有する波長変換部とを備え、波長変換部における発光物質は平均粒子径が０．１ｎｍ〜１００ｎｍのナノクリスタル蛍光体からなることを特徴とするものであり、発光素子から放射される光とナノクリスタル蛍光体から放射される光との合成光を得ることができ、また、蛍光物質としてナノクリスタル蛍光体を用いていることで量子サイズ効果が発現し、発光物質として従来のように粒子径が数μｍのバルク蛍光体を用いた場合に比べて組成を変更することなしに粒子径をナノサイズ化するだけで蛍光物質での発光効率を高めることができるとともに温度消光を低減できるので、従来に比べて装置全体としての発光効率を高めることができるとともに温度上昇に伴う輝度の低下を抑制することができる。
【００１０】
請求項２の発明は、請求項１の発明において、前記蛍光物質は、平均粒子径が１ｎｍ〜１０ｎｍのナノクリスタル蛍光体からなるので、量子サイズ効果が顕著に発現しやすく、発光効率のより一層の向上および温度消光のより一層の低減が図れる。
【００１１】
請求項３の発明は、請求項１または請求項２の発明において、前記波長変換部は、前記各ナノクリスタル蛍光体それぞれの表面を覆い紫外線および可視光を透光する材料からなる修飾膜を有するので、前記ナノクリスタル蛍光体中の電子とホールとを閉じ込めることができ量子サイズ効果の発現を促進することができ、しかも、前記ナノクリスタル蛍光体の表面の欠陥に基づくサイトをキャップすることができてエネルギ損失が低下し、前記ナノクリスタル蛍光体での発光効率を増大させることが可能となる。なお、修飾膜は、ナノクリスタル蛍光体の表面に単に異種材料を物理的に付着させて形成するのではなく、前記ナノクリスタル蛍光体の最表面の原子と異種材料の原子とを化学的に結合させて形成する。ここにおいて、修飾膜の材料としては、金属酸化物（例えば、ＳｉＯ２、Ａｌ２Ｏ３、ＴｉＯ２など）や有機酸（例えば、カルボン酸、スルホン酸、フェノール、酸イミドなど）などを採用すればよい。修飾膜の材料として金属酸化物を採用する場合には、前記ナノクリスタル蛍光体を有機金属化合物溶液（アルコキシド）へディップしてから濾過した後に加熱することにより、容易に前記ナノクリスタル蛍光体の表面に修飾膜を形成することができ、また、有機酸を採用する場合には、前記ナノクリスタル蛍光体を有機酸モノマー溶液へディップしてから濾過した後に乾燥させることにより、容易に前記ナノクリスタル蛍光体の表面に修飾膜を形成することができる。
【００１２】
請求項４の発明は、請求項３の発明において、前記波長変換部は、前記ナノクリスタル蛍光体と前記修飾膜とで構成される多数の微粒子からなるので、前記ナノクリスタル蛍光体を分散させることなく量子サイズ効果を発現させることが可能であり、前記波長変換部を容易に形成することが可能となる。
【００１３】
請求項５の発明は、請求項１ないし請求項３の発明において、前記波長変換部は、紫外線および可視光を透光する媒質中に前記ナノクリスタル蛍光体が分散されているので、前記ナノクリスタル蛍光体での量子サイズ効果による発光効率の向上および温度消光の低減をより起こりやすくすることができる。
【００１４】
請求項６の発明は、請求項５の発明において、前記媒質が固体であるので、前記ナノクリスタル蛍光体の分散状態を固定化でき、発光装置をハンドリングしやすく、機械的強度の点での信頼性を高めることができる。
【００１５】
請求項７の発明は、請求項６の発明において、前記固体が樹脂であるので、前記媒質となる固体の成形加工が容易になるとともに、軽量化を図ることができる。なお、前記媒質となる固体に適した樹脂としては、例えば、エポキシ樹脂、シリコーン樹脂、アクリル樹脂や、これらの変性樹脂などが挙げられる。
【００１６】
請求項８の発明は、請求項６の発明において、前記固体がゾルゲル法によって固化されたガラスであるので、樹脂に比べて耐候性の優れたガラスを用いることにより、前記媒質の変色による着色がなく、長寿命化を図ることができる。
【００１７】
請求項９の発明は、請求項１ないし請求項８の発明において、前記各ナノクリスタル蛍光体それぞれの発光ピーク波長の含まれる波長域が、３８０ｎｍ〜５００ｎｍ、５００ｎｍ〜６００ｎｍ、６００ｎｍ〜８００ｎｍの３つの波長域から選択されるので、青色光、緑色光、赤色光、あるいはこれらの合成光を得ることが可能であり、白色光を得ることも可能となる。
【００１８】
請求項１０の発明は、請求項１ないし請求項９の発明において、前記ナノクリスタル蛍光体は、母体結晶中に発光イオンを添加したドープ型半導体微粒子であるので、前記発光素子から放射される光の波長である励起波長に応じて母体結晶および発光イオンを適宜選択することにより、所望の波長の光の放射が可能となる。なお、ドープ型半導体微粒子としては、例えば以下のものがある。
【００１９】
まず、発光強度が最大となるピーク波長が３８０ｎｍ〜５００ｎｍのドープ型半導体微粒子としては、例えば、ＢａＭｇＡｌ１０Ｏ１７：Ｅｕ、ＢａＭｇ２Ａｌ１６Ｏ２７：Ｅｕ、Ｍ５（ＰＯ４）３Ｃｌ：Ｅｕ（ただし、ＭはＳｒ、Ｃａ、Ｂａ、Ｍｇの中から選ばれた少なくとも１種類の元素）、Ｍ１０（ＰＯ４）６Ｃｌ２：Ｅｕ（ただし、ＭはＳｒ、Ｃａ、Ｂａ、Ｍｇの中から選ばれた少なくとも１種類の元素）、Ｓｒ４Ａｌ１４Ｏ２５：Ｅｕ、（Ｓｒ，Ｂａ）Ａｌ２Ｓｉ２Ｏ８：Ｅｕ、２ＳｒＯ・ｘＰ２Ｏ５・ｙＢ２Ｏ３：Ｅｕ（ただし、ｘ＋ｙ＝１）、ＺｎＳ：Ａｇ、ＺｎＳ：Ａｇ，Ａｌ、ＺｎＳ：Ａｇ，Ｃｌ、（ＺｎＣｄ）Ｓ：Ａｇ、（ＺｎＣｄ）Ｓ：Ａｇ，Ａｌ、（ＺｎＣｄ）Ｓ：Ａｇ，Ｃｌなどが挙げられる。
【００２０】
次に、発光強度が最大となるピーク波長が５００ｎｍ〜６００ｎｍのドープ型半導体微粒子としては、例えば、Ｓｒ２Ｓｉ３Ｏ８・２ＳｒＣｌ２：Ｅｕ、Ｂａ３ＭｇＳｉ２Ｏ８：Ｅｕ、ＳｒＧａ２Ｓ４：Ｅｕ、Ｙ２ＳｉＯ５：Ｃｅ，Ｔｂ、ＬａＰＯ４：Ｃｅ，Ｔｂ、ＭｇＡｌ１１Ｏ１９：Ｃｅ，Ｔｂ、ＧｄＭｇＢ５Ｏ１０：Ｃｅ，Ｔｂ、Ｚｎ２ＳｉＯ４：Ｍｎ、Ｒｅ３Ｍ５Ｏ１２：Ｃｅ（ただし、ＲｅはＹ、Ｌｕ、Ｓｅ、Ｌａ、Ｇｄ、Ｓｍの中から選ばれた少なくとも１種類の元素、ＭはＡｌ、Ｇａ、Ｉｎの中から選ばれた少なくとも１種類の元素）、ＺｎＳ：Ｃｕ、ＺｎＳ：Ｃｕ，Ｃｌ、ＺｎＳ：Ｃｕ，Ａｌ、ＺｎＳ：Ｃｕ，Ａｇ、ＺｎＳ：Ｃｕ，Ａｕ，Ａｌ、（ＺｎＣｄ）Ｓ：Ｃｕ、（ＺｎＣｄ）Ｓ：Ｃｕ，Ｃｌ、（ＺｎＣｄ）Ｓ：Ｃｕ，Ａｌ、（ＺｎＣｄ）Ｓ：Ｃｕ，Ａｇ、（ＺｎＣｄ）Ｓ：Ｃｕ，Ａｕ，Ａｌなどが挙げられる。
【００２１】
また、発光強度が最大となるピーク波長が６００ｎｍ〜８００ｎｍのドープ型半導体微粒子としては、例えば、Ｙ２Ｏ３：Ｅｕ、Ｙ２Ｏ２Ｓ：Ｅｕ、Ｙ２Ｏ２Ｓ：Ｅｕ，Ｂｉ、ＹＶＯ４：Ｅｕ、ＹＶＯ４：Ｅｕ，Ｂｉ、Ｙ（ＰＶ）Ｏ４：Ｅｕ、Ｙ（ＰＶ）Ｏ４：Ｅｕ，Ｂｉ、ＣａＳ：Ｅｕ、ＳｒＳ：Ｅｕ、（ＣａＳｒ）Ｓ：Ｅｕ、３．５ＭｇＯ・０．５ＭｇＦ２・ＧｅＯ２：Ｍｎ、Ｒｅ３Ｍ５Ｏ１２：Ｃｅ，Ｐｒ（ただし、ＲｅはＹ、Ｌｕ、Ｓｅ、Ｌａ、Ｇｄ、Ｓｍの中から選ばれた少なくとも１種類の元素、ＭはＡｌ、Ｇａ、Ｉｎの中から選ばれた少なくとも１種類の元素）などが挙げられる。
【００２２】
請求項１１の発明は、請求項１ないし請求項９の発明において、前記ナノクリスタル蛍光体は、母体結晶のみからなる非ドープ型半導体微粒子であるので、母体結晶のバンドギャップよりも大きなエネルギを持つ波長の光を照射することで、バンドギャップに相当する波長の光を発光させることが可能となる。なお、母体結晶のみからなる非ドープ型半導体微粒子としては、例えば、ＣｄＴｅ、ＣｄＳｅ、ＺｎＴｅ、ＺｎＳｅ、ＣｄＳ、ＺｎＳなどが挙げられる。
【００２３】
請求項１２の発明は、請求項１ないし請求項１１の発明において、前記発光素子の発光ピーク波長が２００ｎｍ〜５００ｎｍであるので、前記発光素子からの発光を前記ナノクリスタル蛍光体によって効率良く可視光に変換することが可能となる。この点について以下に説明する。
【００２４】
３８０ｎｍ〜８００ｎｍの可視光を発光する蛍光体を励起できる励起波長としては、通常、ストークスシフトの理論から３８０ｎｍ以下の紫外線が必要である。一方、紫外線源として発光ダイオードを想定した場合には、現状では原理的に可能性がある下限波長は約２００ｎｍである。したがって、２００ｎｍ〜３８０ｎｍの発光ピーク波長を有する発光素子により蛍光体を励起することができる。しかし、発光素子の発光ピーク波長が３８０ｎｍ〜５００ｎｍの青色領域であっても、この発光エネルギの一部はそのまま青色光として利用し、残りの一部を励起光として緑色に発光する蛍光体および赤色に発光する蛍光体と組み合わせても、トータルとしては３８０ｎｍから８００ｎｍにわたる発光を得ることができる。
【００２５】
【発明の実施の形態】
（基本概念）
まず、以下に説明する各実施形態の共通した基本概念について図３１〜３３を参照しながら説明する。
【００２６】
本願発明者らは上記課題解決のために種々検討した結果、従来のようなバルク蛍光体を用いる代わりに、ナノクリスタル蛍光体を用いることにより上記課題が解決されることを見出し、本発明を成すに至った。そこで、各実施形態の発光装置１は、図３１に示すように、ＬＥＤチップからなる発光素子２と、発光素子２の近傍に配設され発光素子２の発光によって励起されて所望の波長の光を放射する多数の蛍光物質を有する波長変換部３とを備えている。
【００２７】
発光素子２は、例えば、発光ピーク波長が２００ｎｍ〜５００ｎｍの紫外光ないし青色光を放射するＬＥＤチップにより構成されるが、これら以外の発光色のＬＥＤチップであってもよい。波長変換部３は、図３２や図３３に示すように、発光素子２により励起され発光する多数のナノクリスタル蛍光体３１を備えており、発光素子２から放射された光の一部を励起光として励起光とは異なる所望の波長の光を放射する波長変換機能を有している。ここに、波長変換部３におけるナノクリスタル蛍光体は、平均粒子径が０．１ｎｍ〜１００ｎｍの蛍光体であれば量子サイズ効果の発現により発光効率の向上および温度消光の低減が図れるが、量子サイズ効果の発現を顕著にするには、平均粒子径を１ｎｍ〜１０ｎｍにすることが望ましい。なお、上述のバルク蛍光体の平均粒子径は数μｍオーダであって、概ね５μｍ程度で発光効率が最大となり、１μｍを下回ると発光効率が低下する。
【００２８】
ところで、波長変換部３は、多数のナノクリスタル蛍光体３１が凝集せずに分散していることが好ましく、例えば、紫外線および可視光を透光する媒質中にナノクリスタル蛍光体３１を分散させておけば、発光効率をより高めることができるとともに温度消光をより低減できる。ここにおいて、媒質が固体であれば、ナノクリスタル蛍光体３１の分散状態を固定化でき、発光装置１をハンドリングしやすく、機械的強度の点での信頼性を高めることができる。なお、上記媒質となる固体として、例えば、エポキシ樹脂、シリコーン樹脂、アクリル樹脂などの樹脂樹脂を採用すれば、上記媒質となる固体の成形加工が容易になるとともに、軽量化を図ることができ、また、上記媒質となる固体として、ゾルゲル法によって固化されたガラスを採用すれば、樹脂に比べて耐候性の優れたガラスを用いることにより、上記媒質の変色による着色がなく、長寿命化を図ることができる。
【００２９】
ただし、波長変換部３が、図３３に示すように、各ナノクリスタル蛍光体３１それぞれの表面を覆い紫外線および可視光を透光する材料からなる多数の修飾膜３３を有している場合には、ナノクリスタル蛍光体３１中の電子とホールとを閉じ込めることができ量子サイズ効果の発現を促進することができ、しかも、ナノクリスタル蛍光体３１の表面の欠陥に基づくサイトをキャップすることができてエネルギ損失が低下し、ナノクリスタル蛍光体３１での発光効率を増大させることが可能となる。なお、修飾膜３３は、ナノクリスタル蛍光体３１の表面に単に異種材料を物理的に付着させて形成するのではなく、ナノクリスタル蛍光体３１の最表面の原子と異種材料の原子とを化学的に結合させて形成する。ここにおいて、修飾膜の材料としては、金属酸化物（例えば、ＳｉＯ２、Ａｌ２Ｏ３、ＴｉＯ２など）や有機酸（例えば、カルボン酸、スルホン酸、フェノール、酸イミドなど）などを採用すればよい。修飾膜３３の材料として金属酸化物を採用する場合には、ナノクリスタル蛍光体３１を有機金属化合物溶液（アルコキシド）へディップしてから濾過した後に加熱することにより、容易にナノクリスタル蛍光体３１の表面に修飾膜３３を形成することができ、また、有機酸を採用する場合には、ナノクリスタル蛍光体３１を有機酸モノマー溶液へディップしてから濾過した後に乾燥させることにより、容易にナノクリスタル蛍光体３１の表面に修飾膜３３を形成することができる。波長変換部３を、ナノクリスタル蛍光体３１と修飾膜３３とで構成される多数の微粒子により構成する場合には、ナノクリスタル蛍光体３１を分散させることなく量子サイズ効果を発現させることが可能であり、波長変換部を３容易に形成することが可能となる。
【００３０】
上述の発光装置１では、発光素子２から放射された光の一部４ａは波長変換部３をそのまま透過し、発光装置１の外部へ放射される。また、発光装置１では、発光素子２から放射された光の他の一部４ｂが波長変換部３のナノクリスタル蛍光体３１に吸収されてナノクリスタル蛍光体３１を励起して、ナノクリスタル蛍光体３１にて所望の波長の光５に変換されて発光装置１の外部へ放射される。
【００３１】
したがって、発光装置１からは、発光素子２で発光して波長変換部３を透過した光４ａと波長変換部４のナノクリスタル蛍光体で発光した光５との合成光６が放射されることになり、発光素子２の発光色とナノクリスタル蛍光体の発光色とで発光装置１全体としての発光色が決まることになる。なお、発光素子２で発光して波長変換部３を透過する光４ａは必ずしも必要ではない。
【００３２】
ところで、各ナノクリスタル蛍光体３１それぞれの発光ピーク波長の含まれる波長域は、３８０ｎｍ〜５００ｎｍ、５００ｎｍ〜６００ｎｍ、６００ｎｍ〜８００ｎｍの３つの波長域のいずれかから選択すれば、発光装置１全体として、青色光、緑色光、赤色光、あるいはこれらの合成光を得ることが可能であり、白色光を得ることも可能となる。
【００３３】
また、ナノクリスタル蛍光体３１としては、母体結晶中に発光イオンを添加したドープ型半導体微粒子を採用してもよいし、母体結晶のみからなる非ドープ型半導体微粒子を採用してもよい。ここに、ナノクリスタル蛍光体３１としてドープ型半導体微粒子を採用した場合には、発光素子２から放射される光の波長である励起波長に応じて母体結晶および発光イオンを適宜選択することにより、所望の波長の光の放射が可能となる。一方、ナノクリスタル蛍光体３１として非ドープ型半導体微粒子を採用した場合には、母体結晶のバンドギャップよりも大きなエネルギを持つ波長の光を照射することで、バンドギャップに相当する波長の光を発光させることが可能となる。
【００３４】
なお、上述のドープ型半導体微粒子としては、例えば以下のものがある。
【００３５】
発光強度が最大となるピーク波長が３８０ｎｍ〜５００ｎｍのドープ型半導体微粒子としては、例えば、ＢａＭｇＡｌ１０Ｏ１７：Ｅｕ、ＢａＭｇ２Ａｌ１６Ｏ２７：Ｅｕ、Ｍ５（ＰＯ４）３Ｃｌ：Ｅｕ（ただし、ＭはＳｒ、Ｃａ、Ｂａ、Ｍｇの中から選ばれた少なくとも１種類の元素）、Ｍ１０（ＰＯ４）６Ｃｌ２：Ｅｕ（ただし、ＭはＳｒ、Ｃａ、Ｂａ、Ｍｇの中から選ばれた少なくとも１種類の元素）、Ｓｒ４Ａｌ１４Ｏ２５：Ｅｕ、（Ｓｒ，Ｂａ）Ａｌ２Ｓｉ２Ｏ８：Ｅｕ、２ＳｒＯ・ｘＰ２Ｏ５・ｙＢ２Ｏ３：Ｅｕ（ただし、ｘ＋ｙ＝１）、ＺｎＳ：Ａｇ、ＺｎＳ：Ａｇ，Ａｌ、ＺｎＳ：Ａｇ，Ｃｌ、（ＺｎＣｄ）Ｓ：Ａｇ、（ＺｎＣｄ）Ｓ：Ａｇ，Ａｌ、（ＺｎＣｄ）Ｓ：Ａｇ，Ｃｌなどが挙げられる。
【００３６】
発光強度が最大となるピーク波長が５００ｎｍ〜６００ｎｍのドープ型半導体微粒子としては、例えば、Ｓｒ２Ｓｉ３Ｏ８・２ＳｒＣｌ２：Ｅｕ、Ｂａ３ＭｇＳｉ２Ｏ８：Ｅｕ、ＳｒＧａ２Ｓ４：Ｅｕ、Ｙ２ＳｉＯ５：Ｃｅ，Ｔｂ、ＬａＰＯ４：Ｃｅ，Ｔｂ、ＭｇＡｌ１１Ｏ１９：Ｃｅ，Ｔｂ、ＧｄＭｇＢ５Ｏ１０：Ｃｅ，Ｔｂ、Ｚｎ２ＳｉＯ４：Ｍｎ、Ｒｅ３Ｍ５Ｏ１２：Ｃｅ（ただし、ＲｅはＹ、Ｌｕ、Ｓｅ、Ｌａ、Ｇｄ、Ｓｍの中から選ばれた少なくとも１種類の元素、ＭはＡｌ、Ｇａ、Ｉｎの中から選ばれた少なくとも１種類の元素）、ＺｎＳ：Ｃｕ、ＺｎＳ：Ｃｕ，Ｃｌ、ＺｎＳ：Ｃｕ，Ａｌ、ＺｎＳ：Ｃｕ，Ａｇ、ＺｎＳ：Ｃｕ，Ａｕ，Ａｌ、（ＺｎＣｄ）Ｓ：Ｃｕ、（ＺｎＣｄ）Ｓ：Ｃｕ，Ｃｌ、（ＺｎＣｄ）Ｓ：Ｃｕ，Ａｌ、（ＺｎＣｄ）Ｓ：Ｃｕ，Ａｇ、（ＺｎＣｄ）Ｓ：Ｃｕ，Ａｕ，Ａｌなどが挙げられる。
【００３７】
発光強度が最大となるピーク波長が６００ｎｍ〜８００ｎｍのドープ型半導体微粒子としては、例えば、Ｙ２Ｏ３：Ｅｕ、Ｙ２Ｏ２Ｓ：Ｅｕ、Ｙ２Ｏ２Ｓ：Ｅｕ，Ｂｉ、ＹＶＯ４：Ｅｕ、ＹＶＯ４：Ｅｕ，Ｂｉ、Ｙ（ＰＶ）Ｏ４：Ｅｕ、Ｙ（ＰＶ）Ｏ４：Ｅｕ，Ｂｉ、ＣａＳ：Ｅｕ、ＳｒＳ：Ｅｕ、（ＣａＳｒ）Ｓ：Ｅｕ、３．５ＭｇＯ・０．５ＭｇＦ２・ＧｅＯ２：Ｍｎ、Ｒｅ３Ｍ５Ｏ１２：Ｃｅ，Ｐｒ（ただし、ＲｅはＹ、Ｌｕ、Ｓｅ、Ｌａ、Ｇｄ、Ｓｍの中から選ばれた少なくとも１種類の元素、ＭはＡｌ、Ｇａ、Ｉｎの中から選ばれた少なくとも１種類の元素）などが挙げられる。
【００３８】
また、上述の非ドープ型半導体微粒子としては、例えば、ＣｄＴｅ、ＣｄＳｅ、ＺｎＴｅ、ＺｎＳｅ、ＣｄＳ、ＺｎＳなどが挙げられる。
【００３９】
（実施形態１）
本実施形態の発光装置１は、図１（ａ）に示すように、発光素子２と、発光素子２から放射される光に対して透明な樹脂（例えば、エポキシ樹脂、シリコーン樹脂など）からなる封止樹脂を砲弾形に成形したモールド部１１とを備えている。モールド部１１は発光素子２を覆っており、発光素子２は導電性材料により形成したリード端子１２，１３に電気的に接続されている。リード端子１２，１３はリードフレームにより形成されている。なお、モールド部１１の成形時には、封止樹脂を充填した後で、封止樹脂を加熱あるいは封止樹脂へ紫外線を照射して封止樹脂を固化している。
【００４０】
発光素子２は、窒化ガリウム系のＬＥＤチップであり、図１（ａ）における下面側にｎ形半導体層（図示せず）、上面側にｐ形半導体層（図示せず）が形成されており、ｐ形半導体層側から光出力を取り出すから図１の上方を前方として説明する。発光素子２の後面はリード端子１３の前端部に取り付けられたカップ部（ミラー）１４に対してダイボンドによって接合されている。また、発光素子２は、上述のｐ形半導体層およびｎ形半導体層それぞれに導電ワイヤ（例えば、金ワイヤ）１５，１５がボンディングにより接続され、この導電ワイヤ１５，１５を介して発光素子２とリード端子１２，１３とが電気的に接続されている。なお、導電ワイヤ１５，１５は発光素子２から放射される光を妨げないように断面積の小さいものを用いている。
【００４１】
カップ部１４は発光素子２の側面および後面から放射された光を前方に反射する機能を有し、ＬＥＤチップから放射された光およびカップ部１４の内面により前方に反射された光は、レンズとして機能するモールド部１１の前端部を通してモールド部１１から前方に放射される。モールド部１１は、カップ部１４、導電ワイヤ１５，１５、リード端子１２，１３の一部とともに、発光素子２を覆っており、発光素子２が大気中の水分などと反応することによる特性の劣化が防止されている。各リード端子１２，１３の後端部はそれぞれモールド部１１の後面から外部に突出している。
【００４２】
ところで、発光素子２は、図１（ｂ）に示すように、後面以外の表面が蛍光体薄膜層からなる波長変換部３により覆われている。ここに、波長変換部３を構成する蛍光体薄膜層は、多数のナノクリスタル蛍光体を有している。また、蛍光体薄膜層は、例えば、スラリーによるディッピングやスパッタ法などによって形成すればよい。
【００４３】
発光素子２は基板として、上記各半導体層を有する発光部にて発光する光に対して透明な基板（例えば、サファイア基板）を用いており、発光部にて発光した光は全方位に放射されるが、波長変換部３のナノクリスタル蛍光体３１（図３２参照）に吸収された一部の光はナノクリスタル蛍光体３１を励起し、ナノクリスタル蛍光体３１特有の波長の光を放射する。この波長変換部３で発光した光は直接前方へ放射されたりミラー１４によって反射されて前方へ放射される。要するに、発光装置１は、発光素子２から放射された光と波長変換部３から放射された光との合成光が得られることになる。なお、本実施形態では、ナノクリスタル蛍光体３１が蛍光物質を構成している。
【００４４】
しかして、本実施形態の発光装置１は、発光素子２と、発光素子２の発光によって励起されて所望の波長の光を発光する蛍光物質を有する波長変換部３とを備え、波長変換部３の蛍光物質として平均粒子径が０．１ｎｍ〜１００ｎｍのナノクリスタル蛍光体３１を用いているので、発光素子２から放射される光とナノクリスタル蛍光体３１から放射される光との合成光を得ることができ、また、波長変換部３における蛍光物質としてナノクリスタル蛍光体３１を用いていることで量子サイズ効果が発現し、蛍光物質として従来のように粒子径が数μｍのバルク蛍光体を用いた場合に比べて組成を変更することなしに粒子径をナノサイズ化するだけで蛍光物質での発光効率を高めることができるとともに温度消光を低減できるので、従来に比べて発光装置１全体としての発光効率を高めることができるとともに温度上昇に伴う輝度の低下を抑制することができる。
【００４５】
（実施形態２）
本実施形態の発光装置１の基本構成は実施形態１と略同じであって、図２に示すように、波長変換部３がカップ部１４内において発光素子２を覆うように設けられている点に特徴がある。ここにおいて、波長変換部３は、カップ部１４に充填され紫外線および可視光を透光する媒質３２と、当該媒質３２中に略均一に分散された多数のナノクリスタル蛍光体３１とで構成してある。他の構成は実施形態１と同じなので、実施形態１と同様の構成要素には同一の符号を付して説明を省略する。
【００４６】
しかして、本実施形態の発光装置１でも、実施形態１と同様、波長変換部３における蛍光物質として従来のように粒子径が数μｍのバルク蛍光体を用いた場合に比べて組成を変更することなしに粒子径をナノサイズ化するだけで蛍光物質での発光効率を高めることができるとともに温度消光を低減できるので、従来に比べて発光装置１全体としての発光効率を高めることができるとともに温度上昇に伴う輝度の低下を抑制することができる。
【００４７】
（実施形態３）
本実施形態の発光装置１の基本構成は実施形態１と略同じであって、図３に示すように、モールド部１１内に多数のナノクリスタル蛍光体３１を略均一に分散してあり、モールド部１１が波長変換部３を兼ねている点に特徴がある。他の構成は実施形態１と同じなので、実施形態１と同様の構成要素には同一の符号を付して説明を省略する。
【００４８】
しかして、本実施形態の発光装置１でも、実施形態１と同様、波長変換部３における蛍光物質として従来のように粒子径が数μｍのバルク蛍光体を用いた場合に比べて組成を変更することなしに粒子径をナノサイズ化するだけで蛍光物質での発光効率を高めることができるとともに温度消光を低減できるので、従来に比べて発光装置１全体としての発光効率を高めることができるとともに温度上昇に伴う輝度の低下を抑制することができる。
【００４９】
（実施形態４）
本実施形態の発光装置１の基本構成は実施形態１と略同じであって、図４に示すように、波長変換部３がモールド部１１の後面以外の表面を全体にわたって覆うカップ状の形状に形成されている点が相違する。ここにおいて、本実施形態の発光装置１の製造にあたっては、あらかじめカップ状の形状に形成した波長変換部３をモールド部１１に装着するようにしてもよいし、あるいは、ナノクリスタル蛍光体３１（図３２参照）を略均一に分散させた液体をモールド部１１の表面に塗布して乾固するようにしてもよい。他の構成は実施形態１と同じなので、実施形態１と同様の構成要素には同一の符号を付して説明を省略する。
【００５０】
しかして、本実施形態の発光装置１でも、実施形態１と同様、波長変換部３における蛍光物質として従来のように粒子径が数μｍのバルク蛍光体を用いた場合に比べて組成を変更することなしに粒子径をナノサイズ化するだけで蛍光物質での発光効率を高めることができるとともに温度消光を低減できるので、従来に比べて発光装置１全体としての発光効率を高めることができるとともに温度上昇に伴う輝度の低下を抑制することができる。
【００５１】
（実施形態５）
本実施形態の発光装置１は、図５に示すように、プリント配線（導電パターン）１７が施された絶縁基板１６上に発光素子２が表面実装されている。ここにおいて、発光素子２は、実施形態１と同様に窒化ガリウム系のＬＥＤチップであり、図５における下面側にｎ形半導体層（図示せず）、上面側にｐ形半導体層（図示せず）が形成されており、発光部のｐ形半導体層（図示せず）およびｎ形半導体層（図示せず）それぞれが、導電ワイヤ１５，１５を介してプリント配線１７，１７に電気的に接続されている。
【００５２】
また、絶縁基板１６上には、発光素子２を囲む枠材１８が固着されており、枠材１８の内側において発光素子２の周辺のみが波長変換部３により覆われ、波長変換部３の周囲に可視光および紫外線に対して透明な封止樹脂（例えば、エポキシ樹脂、シリコーン樹脂など）からなる封止部１９が設けられている。
【００５３】
ここに、波長変換部３は、例えば、スラリーによるディッピングなどの方法によって形成することでナノクリスタル蛍光体３１（図３２参照）のみで構成するようにしてもよいし、紫外線および可視光を透光する媒質中に多数のナノクリスタル蛍光体３１を略均一に分散した構造としてもよい。
【００５４】
しかして、本実施形態の発光装置１においても、実施形態１と同様、発光素子２と、発光素子２の発光によって励起されて所望の波長の光を発光する蛍光物質を有する波長変換部３とを備え、波長変換部３における蛍光物質として平均粒子径が０．１ｎｍ〜１００ｎｍのナノクリスタル蛍光体３１を用いているので、発光素子２から放射される光とナノクリスタル蛍光体３１から放射される光との合成光を得ることができ、また、蛍光物質としてナノクリスタル蛍光体３１を用いていることで量子サイズ効果が発現し、蛍光物質として従来のように粒子径が数μｍのバルク蛍光体を用いた場合に比べて組成を変更することなしに粒子径をナノサイズ化するだけで蛍光物質での発光効率を高めることができるとともに温度消光を低減できるので、従来に比べて発光装置１全体としての発光効率を高めることができるとともに温度上昇に伴う輝度の低下を抑制することができる。
【００５５】
（実施形態６）
本実施形態の発光装置１の基本構成は実施形態５と略同じであって、図６に示すように、封止部１９内に多数のナノクリスタル蛍光体３１を略均一に分散してあり、封止部１９が波長変換部３を兼ねている点に特徴がある。他の構成は実施形態５と同じなので、実施形態５と同様の構成要素には同一の符号を付して説明を省略する。
【００５６】
しかして、本実施形態の発光装置１でも、実施形態５と同様、波長変換部３における蛍光物質として従来のように粒子径が数μｍのバルク蛍光体を用いた場合に比べて組成を変更することなしに粒子径をナノサイズ化するだけで蛍光物質での発光効率を高めることができるとともに温度消光を低減できるので、従来に比べて発光装置１全体としての発光効率を高めることができるとともに温度上昇に伴う輝度の低下を抑制することができる。
【００５７】
（実施形態７）
本実施形態の発光装置１の基本構成は実施形態５と略同じであって、図７に示すように、封止部１９の前面（図７における上面）と枠材１８の前面（図７における上面）とに跨って前面が前方に凸となるレンズ部４３を配設している点が相違する。ここにおいて、レンズ部４３の材料は紫外線および可視光に対して透明であり且つ耐熱性、耐候性の面で実用上問題がなければ特に限定されるものではなく、例えば封止部１９と同じ材料を採用してもよいし、封止部１９とは異なる材料を採用してもよい。なお、実施形態５と同様の構成要素には同一の符号を付して説明を省略する。
【００５８】
しかして、本実施形態の発光装置１では、実施形態５と同様、波長変換部３における蛍光物質として従来のように粒子径が数μｍのバルク蛍光体を用いた場合に比べて組成を変更することなしに粒子径をナノサイズ化するだけで蛍光物質での発光効率を高めることができるとともに温度消光を低減できるので、従来に比べて装置全体としての発光効率を高めることができるとともに温度上昇に伴う輝度の低下を抑制することができる。しかも、本実施形態の発光装置１では、発光素子２および波長変換部３の前方にレンズ部４３を設けたことにより、発光の指向性制御を行うことができ、指向性の優れた配光が得られるという利点がある。
【００５９】
（実施形態８）
本実施形態の発光装置１の基本構成は実施形態６と略同じであって、図８に示すように、封止部１９の前面（図８における上面）と枠材１８の前面（図８における上面）とに跨って前面が前方に凸となるレンズ部４３を配設している点が相違する。ここにおいて、レンズ部４３の材料は紫外線および可視光に対して透明であり且つ耐熱性、耐候性の面で実用上問題がなければ特に限定されるものではなく、例えば封止部１９と同じ材料を採用してもよいし、封止部１９とは異なる材料を採用してもよい。なお、実施形態６と同様の構成要素には同一の符号を付して説明を省略する。
【００６０】
しかして、本実施形態の発光装置１では、実施形態６と同様、波長変換部３における蛍光物質として従来のように粒子径が数μｍのバルク蛍光体を用いた場合に比べて組成を変更することなしに粒子径をナノサイズ化するだけで蛍光物質での発光効率を高めることができるとともに温度消光を低減できるので、従来に比べて発光装置１全体としての発光効率を高めることができるとともに温度上昇に伴う輝度の低下を抑制することができる。しかも、本実施形態の発光装置１では、発光素子２および波長変換部３の前方にレンズ部４３を設けたことにより、発光の指向性制御を行うことができ、指向性の優れた配光が得られるという利点がある。
【００６１】
（実施形態９）
本実施形態の発光装置１の基本構成は実施形態５と略同じであって、図９に示すように、封止部１９の前面（図９における上面）と枠材１８の前面（図９における上面）とに跨って前面が前方に凸となるレンズ部４３を配設している点が相違する。また、本実施形態では、発光素子２の周辺を波長変換部３で覆う代わりに、レンズ部４３が、紫外線および可視光に対して透明な媒質（例えば、エポキシ樹脂、シリコーン樹脂など）中に多数のナノクリスタル蛍光体３１を略均一に分散して構成されている点が相違する。すなわち、本実施形態では、レンズ部４３が波長変換部３を兼ねている点が相違する。ここにおいて、レンズ部４３の媒質は紫外線および可視光に対して透明であり且つ耐熱性、耐候性の面で実用上問題がなければ特に限定されるものではなく、例えば封止部１９と同じ材料を採用してもよいし、封止部１９とは異なる材料を採用してもよい。なお、実施形態５と同様の構成要素には同一の符号を付して説明を省略する。
【００６２】
しかして、本実施形態の発光装置１では、実施形態５と同様、波長変換部３における蛍光物質として従来のように粒子径が数μｍのバルク蛍光体を用いた場合に比べて組成を変更することなしに粒子径をナノサイズ化するだけで蛍光物質での発光効率を高めることができるとともに温度消光を低減できるので、従来に比べて発光装置１全体としての発光効率を高めることができるとともに温度上昇に伴う輝度の低下を抑制することができる。しかも、本実施形態の発光装置１では、発光素子２の前方にレンズ部４３を設けたことにより、発光の指向性制御を行うことができ、指向性の優れた配光が得られるという利点がある。
【００６３】
（実施形態１０）
本実施形態の発光装置１の基本構成は実施形態５と略同じであって、図１０に示すように、封止部１９の前面（図９における上面）と枠材１８の前面（図９における上面）とに跨って前面が前方に凸となるレンズ部４３を配設している点が相違する。また、本実施形態では、封止部１９が、紫外線および可視光に対して透明な媒質（例えば、エポキシ樹脂、シリコーン樹脂など）中に多数のナノクリスタル蛍光体３１を略均一に分散して構成され、レンズ部４３も、紫外線および可視光に対して透明な媒質（例えば、エポキシ樹脂、シリコーン樹脂など）中に多数のナノクリスタル蛍光体３１を略均一に分散して構成されている点が相違する。すなわち、本実施形態では、封止部１９およびレンズ部４３が波長変換部３を兼ねている点が相違する。ここにおいて、レンズ部４３の媒質は紫外線および可視光に対して透明であり且つ耐熱性、耐候性の面で実用上問題がなければ特に限定されるものではなく、例えば封止部１９と同じ材料を採用してもよいし、封止部１９とは異なる材料を採用してもよい。なお、実施形態５と同様の構成要素には同一の符号を付して説明を省略する。
【００６４】
しかして、本実施形態の発光装置１では、実施形態５と同様、波長変換部３における蛍光物質として従来のように粒子径が数μｍのバルク蛍光体を用いた場合に比べて組成を変更することなしに粒子径をナノサイズ化するだけで蛍光物質での発光効率を高めることができるとともに温度消光を低減できるので、従来に比べて発光装置１全体としての発光効率を高めることができるとともに温度上昇に伴う輝度の低下を抑制することができる。しかも、本実施形態の発光装置１では、発光素子２および波長変換部３を構成する封止部１９の前方にレンズ部４３を設けたことにより、発光の指向性制御を行うことができ、指向性の優れた配光が得られるという利点がある。
【００６５】
（実施形態１１）
本実施形態の発光装置１の基本構成は実施形態９と略同じであって、図１１に示すように、実施形態９にて封止部１９が形成されていた部分を空洞２６として、レンズ部４３を枠材１８に気密封止している点が相違する。ここに、空洞２６は、真空状態とするか、あるいは不活性ガスを封入しておくことが望ましい。なお、実施形態９と同様の構成要素には同一の符号を付して説明を省略する。
【００６６】
しかして、本実施形態では、実施形態９と同様、波長変換部３における蛍光物質として従来のように粒子径が数μｍのバルク蛍光体を用いた場合に比べて組成を変更することなしに粒子径をナノサイズ化するだけで蛍光物質での発光効率を高めることができるとともに温度消光を低減できるので、従来に比べて発光装置１全体としての発光効率を高めることができるとともに温度上昇に伴う輝度の低下を抑制することができる。しかも、本実施形態の発光装置１では、発光素子２の前方にレンズ部４３を設けたことにより、発光の指向性制御を行うことができ、指向性の優れた配光が得られるという利点がある。
【００６７】
（実施形態１２）
本実施形態の発光装置１の基本構成は実施形態５と略同じであって、実施形態５で説明した枠材１８（図５参照）を用いておらず、図１２に示すように、封止部１９の形状が異なる。すなわち、本実施形態における封止部１９は、円錐台状の形状に形成され、発光素子２の周辺に形成された波長変換部３や導電ワイヤ１５，１５を覆うように設けてある。ここにおいて、波長変換部３は、例えば、スラリーによるディッピングなどの方法によって形成することでナノクリスタル蛍光体３１（図３２参照）のみで構成するようにしてもよいし、紫外線および可視光を透光する媒質中に多数のナノクリスタル蛍光体３１を略均一に分散した構造としてもよい。封止部１９は成形用金型などを用いてエポキシ樹脂やシリコーン樹脂などの紫外線および可視光に対して透明な樹脂（透光性樹脂）を固化することにより形成している。なお、実施形態５と同様の構成要素には同一の符号を付して説明を省略する。
【００６８】
しかして、本実施形態の発光装置１においても、実施形態５と同様、波長変換部３における蛍光物質として従来のように粒子径が数μｍのバルク蛍光体を用いた場合に比べて組成を変更することなしに粒子径をナノサイズ化するだけで蛍光物質での発光効率を高めることができるとともに温度消光を低減できるので、従来に比べて発光装置１全体としての発光効率を高めることができるとともに温度上昇に伴う輝度の低下を抑制することができる。また、本実施形態の発光装置１では、実施形態５に比べて部品点数を少なくすることができ、小型化および軽量化を図ることができる。
（実施形態１３）
本実施形態の発光装置１の基本構成は実施形態１２と略同じであって、図１３に示すように、発光素子２の周辺のみを波長変換部３で覆う代わりに、封止部１９が、紫外線および可視光に対して透明な封止樹脂（例えば、エポキシ樹脂、シリコーン樹脂など）中に多数のナノクリスタル蛍光体３１を略均一に分散して構成されている点が相違する。すなわち、本実施形態では、封止部１９が波長変換部３を兼ねている点が相違する。
【００６９】
しかして、本実施形態の発光装置１においても、実施形態１２と同様、波長変換部３における蛍光物質として従来のように粒子径が数μｍのバルク蛍光体を用いた場合に比べて組成を変更することなしに粒子径をナノサイズ化するだけで蛍光物質での発光効率を高めることができるとともに温度消光を低減できるので、従来に比べて発光装置１全体としての発光効率を高めることができるとともに温度上昇に伴う輝度の低下を抑制することができ、また、実施形態５に比べて部品点数を少なくすることができ、小型化および軽量化を図ることができる。
【００７０】
（実施形態１４）
本実施形態の発光装置１の基本構成は実施形態１２と略同じであって、図１４に示すように、封止部１９の前面（図１４における上面）側に前面が前方に凸となるレンズ部４３を設けている点が相違する。ここにおいて、レンズ部４３は、後面（図１４における下面）が封止部１９の前面に密着する形で設けられている。レンズ部４３は、封止部１９と同じ材料を用いて封止部１９と一体成形してもよいし、封止部１９を形成した後に、封止部１９と同じ材料または異なる材料を用いて形成するようにしてもよい。なお、実施形態１２と同様の構成要素には同一の符号を付して説明を省略する。
【００７１】
しかして、本実施形態の発光装置１では、実施形態１２と同様、波長変換部３における蛍光物質として従来のように粒子径が数μｍのバルク蛍光体を用いた場合に比べて組成を変更することなしに粒子径をナノサイズ化するだけで蛍光物質での発光効率を高めることができるとともに温度消光を低減できるので、従来に比べて発光装置１全体としての発光効率を高めることができるとともに温度上昇に伴う輝度の低下を抑制することができ、また、発光素子２および波長変換部３の前方にレンズ部４３を設けたことにより、発光の指向性制御を行うことができ、指向性の優れた配光が得られるという利点がある。
【００７２】
（実施形態１５）
本実施形態の発光装置１の基本構成は実施形態１３と略同じであって、図１５に示すように、波長変換部３を兼ねる封止部１９の前面（図１５における上面）側に前面が前方に凸となっているレンズ部４３を設けている点が相違する。ここにおいて、レンズ部４３は、後面（図１５における下面）が封止部１９の前面に密着する形で設けられている。レンズ部４３は、封止部１９を形成した後に、紫外線および可視光に対して透明な透光性樹脂（例えば、エポキシ樹脂、シリコーン樹脂など）を用いて形成すればよい。なお、実施形態１３と同様の構成要素には同一の符号を付して説明を省略する。
【００７３】
しかして、本実施形態の発光装置１では、実施形態１３と同様、波長変換部３における蛍光物質として従来のように粒子径が数μｍのバルク蛍光体を用いた場合に比べて組成を変更することなしに粒子径をナノサイズ化するだけで蛍光物質での発光効率を高めることができるとともに温度消光を低減できるので、従来に比べて発光装置１全体としての発光効率を高めることができるとともに温度上昇に伴う輝度の低下を抑制することができる。また、発光素子２および波長変換部３の前方にレンズ部４３を設けたことにより、発光の指向性制御を行うことができ、指向性の優れた配光が得られるという利点がある。
【００７４】
（実施形態１６）
本実施形態の発光装置１の基本構成は実施形態１５と略同じであって、図１６に示すように、レンズ部４３が、紫外線および可視光に対して透明な媒質（例えば、エポキシ樹脂、シリコーン樹脂など）中に多数のナノクリスタル蛍光体３１を略均一に分散して構成されている点が相違する。すなわち、本実施形態では、封止部１９およびレンズ部４３が波長変換部３を兼ねている点が相違する。ここにおいて、レンズ部４３の媒質は紫外線および可視光に対して透明であり且つ耐熱性、耐候性の面で実用上問題がなければ特に限定されるものではなく、例えば封止部１９と同じ材料を採用してもよいし、封止部１９とは異なる材料を採用してもよい。なお、実施形態１５と同様の構成要素には同一の符号を付して説明を省略する。
【００７５】
しかして、本実施形態の発光装置１では、実施形態１５と同様、波長変換部３における蛍光物質として従来のように粒子径が数μｍのバルク蛍光体を用いた場合に比べて組成を変更することなしに粒子径をナノサイズ化するだけで蛍光物質での発光効率を高めることができるとともに温度消光を低減できるので、従来に比べて発光装置１全体としての発光効率を高めることができるとともに温度上昇に伴う輝度の低下を抑制することができる。また、レンズ部４３を設けたことにより、発光の指向性制御を行うことができ、指向性の優れた配光が得られるという利点がある。
【００７６】
（実施形態１７）
本実施形態の発光装置１の基本構成は実施形態５と略同じであって、図１７に示すように、絶縁基板１６の一面（図１７における上面）に発光素子２を収納する凹所１６ａが設けられており、凹所１６ａの底部に発光素子２が実装されている点などが相違する。ここにおいて、絶縁基板１６に形成されたプリント配線（導電パターン）１７，１７は凹所１６ａの底部まで延長されている。また、発光素子２は、実施形態５と同様に窒化ガリウム系のＬＥＤチップであり、図１７における下面側にｎ形半導体層（図示せず）、上面側にｐ形半導体層（図示せず）が形成されており、発光部のｐ形半導体層（図示せず）およびｎ形半導体層（図示せず）それぞれが、導電ワイヤ１５，１５を介してプリント配線１７，１７に電気的に接続されている。また、本実施形態では、発光素子３の周辺に波長変換部３が設けられるとともに、凹所１６ａ内に波長変換部３および導電ワイヤ１５，１５を覆うように透明な封止樹脂（例えば、エポキシ樹脂、シリコーン樹脂など）からなる封止部１９を設けている。波長変換部３は、例えば、スラリーによるディッピングなどの方法によって形成することでナノクリスタル蛍光体３１（図３１参照）のみで構成するようにしてもよいし、紫外線および可視光を透光する媒質中に多数のナノクリスタル蛍光体３１を略均一に分散した構造としてもよい。なお、実施形態５と同様の構成要素には同一の符号を付して説明を省略する。
【００７７】
しかして、本実施形態の発光装置１では、実施形態５と同様、波長変換部３における蛍光物質として従来のように粒子径が数μｍのバルク蛍光体を用いた場合に比べて組成を変更することなしに粒子径をナノサイズ化するだけで蛍光物質での発光効率を高めることができるとともに温度消光を低減できるので、従来に比べて発光装置１全体としての発光効率を高めることができるとともに温度上昇に伴う輝度の低下を抑制することができる。
【００７８】
また、本実施形態では、封止部１９が絶縁基板１６の一面に形成された凹所１６ａに上記封止樹脂を充填することで形成されているので、実施形態５で説明した枠材１８（図５参照）や実施形態１２で説明した成形用金型を用いることなく封止部１９を形成することができ、実施形態５，１２に比べて発光素子２の封止工程を簡便に行えるという利点がある。
【００７９】
（実施形態１８）
本実施形態の発光装置１の基本構成は実施形態１７と略同じであって、図１８に示すように、凹所１６ａを埋める封止部１９内に多数のナノクリスタル蛍光体３１を略均一に分散してあり、封止部１９が波長変換部３を兼ねている点に特徴がある。他の構成は実施形態１７と同じなので、実施形態１７と同様の構成要素には同一の符号を付して説明を省略する。
【００８０】
しかして、本実施形態の発光装置１でも、実施形態１７と同様、波長変換部３における蛍光物質として従来のように粒子径が数μｍのバルク蛍光体を用いた場合に比べて組成を変更することなしに粒子径をナノサイズ化するだけで蛍光物質での発光効率を高めることができるとともに温度消光を低減できるので、従来に比べて発光装置１全体としての発光効率を高めることができるとともに温度上昇に伴う輝度の低下を抑制することができる。
【００８１】
（実施形態１９）
本実施形態の発光装置１の基本構成は実施形態１７と略同じであって、図１９に示すように、封止部１９の前面（図１９における上面）に、前方に凸となるレンズ部４３を設けている点が相違する。レンズ部４３は、封止部１９と絶縁基板１６の一面とに跨って設けてあり、絶縁基板１６の一面においてプリント配線１７が形成されている部位ではプリント配線１７に密着している。ここにおいて、レンズ部４３の材料は紫外線および可視光に対して透明であり且つ耐熱性、耐候性の面で実用上問題がなければ特に限定されるものではなく、例えば封止部１９と同じ材料を採用してもよいし、封止部１９とは異なる材料を採用してもよい。なお、実施形態１７と同様の構成要素には同一の符号を付して説明を省略する。
【００８２】
しかして、本実施形態の発光装置１では、実施形態１７と同様、波長変換部３における蛍光物質として従来のように粒子径が数μｍのバルク蛍光体を用いた場合に比べて組成を変更することなしに粒子径をナノサイズ化するだけで蛍光物質での発光効率を高めることができるとともに温度消光を低減できるので、従来に比べて発光装置１全体としての発光効率を高めることができるとともに温度上昇に伴う輝度の低下を抑制することができる。しかも、本実施形態の発光装置１では、発光素子２および波長変換部３の前方にレンズ部４３を設けたことにより、発光の指向性制御を行うことができ、指向性の優れた配光が得られるという利点がある。
【００８３】
（実施形態２０）
本実施形態の発光装置１の基本構成は実施形態１８と略同じであって、図２０に示すように、封止部１９の前面（図２０における上面）に、前方に凸となるレンズ部４３を設けている点が相違する。レンズ部４３は、封止部１９と絶縁基板１６の一面とに跨って設けてあり、絶縁基板１６の一面においてプリント配線１７が形成されている部位ではプリント配線１７に密着している。ここにおいて、レンズ部４３の材料は紫外線および可視光に対して透明であり且つ耐熱性、耐候性の面で実用上問題がなければ特に限定されるものではなく、例えばエポキシ樹脂やシリコーン樹脂などを用いればよい。なお、実施形態１８と同様の構成要素には同一の符号を付して説明を省略する。
【００８４】
しかして、本実施形態の発光装置１では、実施形態１８と同様、波長変換部３における蛍光物質として従来のように粒子径が数μｍのバルク蛍光体を用いた場合に比べて組成を変更することなしに粒子径をナノサイズ化するだけで蛍光物質での発光効率を高めることができるとともに温度消光を低減できるので、従来に比べて発光装置１全体としての発光効率を高めることができるとともに温度上昇に伴う輝度の低下を抑制することができる。しかも、本実施形態の発光装置１では、レンズ部４３を設けたことにより、発光の指向性制御を行うことができ、指向性の優れた配光が得られるという利点がある。
【００８５】
（実施形態２１）
本実施形態の発光装置１の基本構成は実施形態１７と略同じであって、図２１に示すように、封止部１９の前面（図２１における上面）側に前面が前方に凸となるレンズ部４３を配設している点が相違する。また、本実施形態では、発光素子２の周辺を波長変換部３で覆う代わりに、レンズ部４３が、紫外線および可視光に対して透明な媒質（例えば、エポキシ樹脂、シリコーン樹脂など）中に多数のナノクリスタル蛍光体３１を略均一に分散して構成されている点が相違する。すなわち、本実施形態では、レンズ部４３が波長変換部３を兼ねている点が相違する。ここにおいて、レンズ部４３の媒質は紫外線および可視光に対して透明であり且つ耐熱性、耐候性の面で実用上問題がなければ特に限定されるものではなく、例えば封止部１９と同じ材料を採用してもよいし、封止部１９とは異なる材料を採用してもよい。なお、実施形態１７と同様の構成要素には同一の符号を付して説明を省略する。
【００８６】
しかして、本実施形態の発光装置１では、実施形態１７と同様、波長変換部３における蛍光物質として従来のように粒子径が数μｍのバルク蛍光体を用いた場合に比べて組成を変更することなしに粒子径をナノサイズ化するだけで蛍光物質での発光効率を高めることができるとともに温度消光を低減できるので、従来に比べて発光装置１全体としての発光効率を高めることができるとともに温度上昇に伴う輝度の低下を抑制することができる。しかも、本実施形態の発光装置１では、発光素子２の前方にレンズ部４３を設けたことにより、発光の指向性制御を行うことができ、指向性の優れた配光が得られるという利点がある。
【００８７】
（実施形態２２）
本実施形態の発光装置１の基本構成は実施形態１７と略同じであって、図２２に示すように、封止部１９の前面（図２１における上面）側に前面が前方に凸となるレンズ部４３を配設している点が相違する。また、本実施形態では、封止部１９が、紫外線および可視光に対して透明な媒質（例えば、エポキシ樹脂、シリコーン樹脂など）中に多数のナノクリスタル蛍光体３１を略均一に分散して構成され、レンズ部４３も、紫外線および可視光に対して透明な媒質（例えば、エポキシ樹脂、シリコーン樹脂など）中に多数のナノクリスタル蛍光体３１を略均一に分散して構成されている点が相違する。すなわち、本実施形態では、封止部１９およびレンズ部４３が波長変換部３を兼ねている点が相違する。ここにおいて、レンズ部４３の媒質は紫外線および可視光に対して透明であり且つ耐熱性、耐候性の面で実用上問題がなければ特に限定されるものではなく、例えば封止部１９と同じ材料を採用してもよいし、封止部１９とは異なる材料を採用してもよい。なお、実施形態１７と同様の構成要素には同一の符号を付して説明を省略する。
【００８８】
しかして、本実施形態の発光装置１では、実施形態１７と同様、波長変換部３における蛍光物質として従来のように粒子径が数μｍのバルク蛍光体を用いた場合に比べて組成を変更することなしに粒子径をナノサイズ化するだけで蛍光物質での発光効率を高めることができるとともに温度消光を低減できるので、従来に比べて発光装置１全体としての発光効率を高めることができるとともに温度上昇に伴う輝度の低下を抑制することができる。しかも、本実施形態の発光装置１では、レンズ部４３を設けたことにより、発光の指向性制御を行うことができ、指向性の優れた配光が得られるという利点がある。
【００８９】
（実施形態２３）
本実施形態の発光装置１の基本構成は実施形態２１と略同じであって、図２３に示すように、実施形態２１にて封止部１９が形成されていた部分を空洞２６として、レンズ部４３が絶縁基板１６の凹所１６ａの開口面を塞ぐように絶縁基板１６に覆着されている点が相違する。ここに、空洞２６は、真空状態とするか、あるいは不活性ガスを封入しておくことが望ましい。なお、実施形態２１と同様の構成要素には同一の符号を付して説明を省略する。
【００９０】
しかして、本実施形態では、実施形態２１と同様、波長変換部３における蛍光物質として従来のように粒子径が数μｍのバルク蛍光体を用いた場合に比べて組成を変更することなしに粒子径をナノサイズ化するだけで蛍光物質での発光効率を高めることができるとともに温度消光を低減できるので、従来に比べて発光装置１全体としての発光効率を高めることができるとともに温度上昇に伴う輝度の低下を抑制することができる。しかも、本実施形態の発光装置１では、発光素子２の前方にレンズ部４３を設けたことにより、発光の指向性制御を行うことができ、指向性の優れた配光が得られるという利点がある。
【００９１】
（実施形態２４）
本実施形態の発光装置１の基本構成は実施形態１７と略同じであって、図２４に示すように、発光素子２が絶縁基板１６に所謂フリップチップ実装されている点に特徴がある。すなわち、発光素子２は、発光部のｐ形半導体層（図示せず）およびｎ形半導体層（図示せず）それぞれの表面側に導電性材料からなるバンプ２４，２４が設けられており、フェースダウンでバンプ２４，２４を介して絶縁基板１６のプリント配線（導電パターン）１７，１７と接続されている。したがって、本実施形態における発光素子２は、絶縁基板１６に最も近い側に発光部が配設され、発光部にて発光した光は発光部の下地基板（例えば、サファイア基板）を通して前面側へ取り出されることになる。また、発光素子２の周辺は波長変換部３により覆われている。なお、実施形態１７と同様の構成要素には同一の符号を付して説明を省略する。
【００９２】
しかして、本実施形態の発光装置１では、実施形態１７と同様、波長変換部３における蛍光物質として従来のように粒子径が数μｍのバルク蛍光体を用いた場合に比べて組成を変更することなしに粒子径をナノサイズ化するだけで蛍光物質での発光効率を高めることができるとともに温度消光を低減できるので、従来に比べて発光装置１全体としての発光効率を高めることができるとともに温度上昇に伴う輝度の低下を抑制することができる。しかも、本実施形態の発光装置１では、レンズ部４３を設けたことにより、発光の指向性制御を行うことができる。
【００９３】
また、本実施形態では、絶縁基板１６に設けられたプリント配線１７，１７と発光素子２とを接続するために実施形態１７のような導電ワイヤ１５，１５を必要としないので、実施形態１７に比べて機械的強度および信頼性を向上させることが可能となる。
【００９４】
（実施形態２５）
本実施形態の発光装置１の基本構成は実施形態１８と略同じであって、図２５に示すように、発光素子２が絶縁基板１６に所謂フリップチップ実装されている点に特徴がある。すなわち、発光素子２は、発光部のｐ形半導体層（図示せず）およびｎ形半導体層（図示せず）それぞれの表面側に導電性材料からなるバンプ２４，２４が設けられており、フェースダウンでバンプ２４，２４を介して絶縁基板１６のプリント配線１７，１７と電気的に接続されている。したがって、本実施形態における発光素子２は、絶縁基板１６に最も近い側に発光部が配設され、発光部にて発光した光は発光部の下地基板（例えば、サファイア基板）を通して前面側へ取り出されることになる。また、発光素子２の周辺は波長変換部３により覆われている。なお、実施形態１８と同様の構成要素には同一の符号を付して説明を省略する。
【００９５】
しかして、本実施形態の発光装置１では、実施形態１８と同様、波長変換部３における蛍光物質として従来のように粒子径が数μｍのバルク蛍光体を用いた場合に比べて組成を変更することなしに粒子径をナノサイズ化するだけで蛍光物質での発光効率を高めることができるとともに温度消光を低減できるので、従来に比べて発光装置１全体としての発光効率を高めることができるとともに温度上昇に伴う輝度の低下を抑制することができる。
【００９６】
また、本実施形態では、絶縁基板１６に設けられたプリント配線１７，１７と発光素子２とを接続するために実施形態１８のような導電ワイヤ１５，１５を必要としないので、実施形態１８に比べて機械的強度および信頼性を向上させることが可能となる。
【００９７】
（実施形態２６）
本実施形態の発光装置１の基本構成は実施形態１９と略同じであって、図２６に示すように、発光素子２が絶縁基板１６に所謂フリップチップ実装されている点に特徴がある。すなわち、発光素子２は、発光部のｐ形半導体層（図示せず）およびｎ形半導体層（図示せず）それぞれの表面側に導電性材料からなるバンプ２４，２４が設けられており、フェースダウンでバンプ２４，２４を介して絶縁基板１６のプリント配線１７，１７と電気的に接続されている。したがって、本実施形態における発光素子２は、絶縁基板１６に最も近い側に発光部が配設され、発光部にて発光した光は発光部の下地基板（例えば、サファイア基板）を通して前面側へ取り出されることになる。また、発光素子２の周辺は波長変換部３により覆われている。なお、実施形態１９と同様の構成要素には同一の符号を付して説明を省略する。
【００９８】
しかして、本実施形態の発光装置１では、実施形態１９と同様、波長変換部３における蛍光物質として従来のように粒子径が数μｍのバルク蛍光体を用いた場合に比べて組成を変更することなしに粒子径をナノサイズ化するだけで蛍光物質での発光効率を高めることができるとともに温度消光を低減できるので、従来に比べて発光装置１全体としての発光効率を高めることができるとともに温度上昇に伴う輝度の低下を抑制することができ、また、発光素子２および波長変換部３の前方にレンズ部４３を設けたことにより、発光の指向性制御を行うことができる。
【００９９】
また、本実施形態では、絶縁基板１６に設けられたプリント配線１７，１７と発光素子２とを接続するために実施形態１９のような導電ワイヤ１５，１５を必要としないので、実施形態１９に比べて機械的強度および信頼性を向上させることが可能となる。
【０１００】
（実施形態２７）
本実施形態の発光装置１の基本構成は実施形態２０と略同じであって、図２７に示すように、発光素子２が絶縁基板１６に所謂フリップチップ実装されている点に特徴がある。すなわち、発光素子２は、発光部のｐ形半導体層（図示せず）およびｎ形半導体層（図示せず）それぞれの表面側に導電性材料からなるバンプ２４，２４が設けられており、フェースダウンでバンプ２４，２４を介して絶縁基板１６のプリント配線１７，１７と電気的に接続されている。したがって、本実施形態における発光素子２は、絶縁基板１６に最も近い側に発光部が配設され、発光部にて発光した光は発光部の下地基板（例えば、サファイア基板）を通して前面側へ取り出されることになる。なお、実施形態２０と同様の構成要素には同一の符号を付して説明を省略する。
【０１０１】
しかして、本実施形態の発光装置１では、実施形態２０と同様、波長変換部３における蛍光物質として従来のように粒子径が数μｍのバルク蛍光体を用いた場合に比べて組成を変更することなしに粒子径をナノサイズ化するだけで蛍光物質での発光効率を高めることができるとともに温度消光を低減できるので、従来に比べて発光装置１全体としての発光効率を高めることができるとともに温度上昇に伴う輝度の低下を抑制することができ、また、発光素子２および波長変換部３の前方にレンズ部４３を設けたことにより、発光の指向性制御を行うことができる。
【０１０２】
また、本実施形態では、絶縁基板１６に設けられたプリント配線１７，１７と発光素子２とを接続するために実施形態２０のような導電ワイヤ１５，１５を必要としないので、実施形態２０に比べて機械的強度および信頼性を向上させることが可能となる。
【０１０３】
（実施形態２８）
本実施形態の発光装置１の基本構成は実施形態２１と略同じであって、図２８に示すように、発光素子２が絶縁基板１６に所謂フリップチップ実装されている点に特徴がある。すなわち、発光素子２は、発光部のｐ形半導体層（図示せず）およびｎ形半導体層（図示せず）それぞれの表面側に導電性材料からなるバンプ２４，２４が設けられており、フェースダウンでバンプ２４，２４を介して絶縁基板１６のプリント配線１７，１７と電気的に接続されている。したがって、本実施形態における発光素子２は、絶縁基板１６に最も近い側に発光部が配設され、発光部にて発光した光は発光部の下地基板（例えば、サファイア基板）を通して前面側へ取り出されることになる。なお、実施形態２１と同様の構成要素には同一の符号を付して説明を省略する。
【０１０４】
しかして、本実施形態の発光装置１では、実施形態２１と同様、波長変換部３における蛍光物質として従来のように粒子径が数μｍのバルク蛍光体を用いた場合に比べて組成を変更することなしに粒子径をナノサイズ化するだけで蛍光物質での発光効率を高めることができるとともに温度消光を低減できるので、従来に比べて発光装置１全体としての発光効率を高めることができるとともに温度上昇に伴う輝度の低下を抑制することができ、また、レンズ部４３を設けたことにより、発光の指向性制御を行うことができる。
【０１０５】
また、本実施形態では、絶縁基板１６に設けられたプリント配線１７，１７と発光素子２とを接続するために実施形態２１のような導電ワイヤ１５，１５を必要としないので、実施形態２１に比べて機械的強度および信頼性を向上させることが可能となる。
【０１０６】
（実施形態２９）
本実施形態の発光装置１の基本構成は実施形態２２と略同じであって、図２９に示すように、発光素子２が絶縁基板１６に所謂フリップチップ実装されている点に特徴がある。すなわち、発光素子２は、発光部のｐ形半導体層（図示せず）およびｎ形半導体層（図示せず）それぞれの表面側に導電性材料からなるバンプ２４，２４が設けられており、フェースダウンでバンプ２４，２４を介して絶縁基板１６のプリント配線１７，１７と電気的に接続されている。したがって、本実施形態における発光素子２は、絶縁基板１６に最も近い側に発光部が配設され、発光部にて発光した光は発光部の下地基板（例えば、サファイア基板）を通して前面側へ取り出されることになる。なお、実施形態２２と同様の構成要素には同一の符号を付して説明を省略する。
【０１０７】
しかして、本実施形態の発光装置１では、実施形態２２と同様、波長変換部３における蛍光物質として従来のように粒子径が数μｍのバルク蛍光体を用いた場合に比べて組成を変更することなしに粒子径をナノサイズ化するだけで蛍光物質での発光効率を高めることができるとともに温度消光を低減できるので、従来に比べて発光装置１全体としての発光効率を高めることができるとともに温度上昇に伴う輝度の低下を抑制することができ、また、レンズ部４３を設けたことにより、発光の指向性制御を行うことができる。
【０１０８】
また、本実施形態では、絶縁基板１６に設けられたプリント配線１７，１７と発光素子２とを接続するために実施形態２２のような導電ワイヤ１５，１５を必要としないので、実施形態２２に比べて機械的強度および信頼性を向上させることが可能となる。
【０１０９】
（実施形態３０）
本実施形態の発光装置１の基本構成は実施形態２３と略同じであって、図３０に示すように、発光素子２が絶縁基板１６に所謂フリップチップ実装されている点に特徴がある。すなわち、発光素子２は、発光部のｐ形半導体層（図示せず）およびｎ形半導体層（図示せず）それぞれの表面側に導電性材料からなるバンプ２４，２４が設けられており、フェースダウンでバンプ２４，２４を介して絶縁基板１６のプリント配線１７，１７と電気的に接続されている。したがって、本実施形態における発光素子２は、絶縁基板１６に最も近い側に発光部が配設され、発光部にて発光した光は発光部の下地基板（例えば、サファイア基板）を通して前面側へ取り出されることになる。なお、実施形態２３と同様の構成要素には同一の符号を付して説明を省略する。
【０１１０】
しかして、本実施形態の発光装置１では、実施形態２３と同様、波長変換部３における蛍光物質として従来のように粒子径が数μｍのバルク蛍光体を用いた場合に比べて組成を変更することなしに粒子径をナノサイズ化するだけで蛍光物質での発光効率を高めることができるとともに温度消光を低減できるので、従来に比べて発光装置１全体としての発光効率を高めることができるとともに温度上昇に伴う輝度の低下を抑制することができ、また、レンズ部４３を設けたことにより、発光の指向性制御を行うことができる。
【０１１１】
また、本実施形態では、絶縁基板１６に設けられたプリント配線１７，１７と発光素子２とを接続するために実施形態２３のような導電ワイヤ１５，１５を必要としないので、実施形態２３に比べて機械的強度および信頼性を向上させることが可能となる。
【０１１２】
ところで、上記各実施形態の発光装置１は１個の発光素子２しか備えていないが、複数個の発光素子２により１単位のモジュールを構成し、モジュールの少なくとも一部に蛍光物質としてのナノクリスタル蛍光体３１を含む波長変換部３を配設するようにしてもよいことは勿論である。なお、例えば実施形態１〜４で説明したような砲弾形のモールド部１１を備える発光装置１の場合には複数個の発光装置１を同一プリント基板に実装して１単位のモジュールを構成するようにしてもよい。また、例えば実施形態５〜２３で説明したような表面実装型の発光装置１については複数個の発光素子２を同一の絶縁基板１６上に配設して１単位のモジュールを構成するようにしてもよいし、実施形態２４〜３０で説明したようなフリップチップ実装型の発光装置１についても複数個の発光素子２を同一絶縁基板１６上に配設して１単位のモジュールを構成するようにしてもよい。
【０１１３】
【発明の効果】
請求項１の発明は、発光素子と、発光素子の発光によって励起されて所望の波長の光を放射する多数の蛍光物質を有する波長変換部とを備え、波長変換部における発光物質は平均粒子径が０．１ｎｍ〜１００ｎｍのナノクリスタル蛍光体からなるものであり、発光素子から放射される光とナノクリスタル蛍光体から放射される光との合成光を得ることができ、また、蛍光物質としてナノクリスタル蛍光体を用いていることで量子サイズ効果が発現し、発光物質として従来のように粒子径が数μｍのバルク蛍光体を用いた場合に比べて組成を変更することなしに粒子径をナノサイズ化するだけで蛍光物質での発光効率を高めることができるとともに温度消光を低減できるので、従来に比べて装置全体としての発光効率を高めることができるとともに温度上昇に伴う輝度の低下を抑制することができるという効果がある。
【０１１４】
請求項２の発明は、請求項１の発明において、前記蛍光物質は、平均粒子径が１ｎｍ〜１０ｎｍのナノクリスタル蛍光体からなるので、量子サイズ効果が顕著に発現しやすく、発光効率のより一層の向上および温度消光のより一層の低減が図れるという効果がある。
【０１１５】
請求項３の発明は、請求項１または請求項２の発明において、前記波長変換部は、前記各ナノクリスタル蛍光体それぞれの表面を覆い紫外線および可視光を透光する材料からなる修飾膜を有するので、前記ナノクリスタル蛍光体中の電子とホールとを閉じ込めることができ量子サイズ効果の発現を促進することができ、しかも、前記ナノクリスタル蛍光体の表面の欠陥に基づくサイトをキャップすることができてエネルギ損失が低下し、前記ナノクリスタル蛍光体での発光効率を増大させることが可能となるという効果がある。
【０１１６】
請求項４の発明は、請求項３の発明において、前記波長変換部は、前記ナノクリスタル蛍光体と前記修飾膜とで構成される多数の微粒子からなるので、前記ナノクリスタル蛍光体を分散させることなく量子サイズ効果を発現させることが可能であり、前記波長変換部を容易に形成することが可能となるという効果がある。
【０１１７】
請求項５の発明は、請求項１ないし請求項３の発明において、前記波長変換部は、紫外線および可視光を透光する媒質中に前記ナノクリスタル蛍光体が分散されているので、前記ナノクリスタル蛍光体での量子サイズ効果による発光効率の向上および温度消光の低減をより起こりやすくすることができるという効果がある。
【０１１８】
請求項６の発明は、請求項５の発明において、前記媒質が固体であるので、前記ナノクリスタル蛍光体の分散状態を固定化でき、発光装置をハンドリングしやすく、機械的強度の点での信頼性を高めることができるという効果がある。
【０１１９】
請求項７の発明は、請求項６の発明において、前記固体が樹脂であるので、前記媒質となる固体の成形加工が容易になるとともに、軽量化を図ることができるという効果がある。
【０１２０】
請求項８の発明は、請求項６の発明において、前記固体がゾルゲル法によって固化されたガラスであるので、樹脂に比べて耐候性の優れたガラスを用いることにより、前記媒質の変色による着色がなく、長寿命化を図ることができるという効果がある。
【０１２１】
請求項９の発明は、請求項１ないし請求項８の発明において、前記各ナノクリスタル蛍光体それぞれの発光ピーク波長の含まれる波長域が、３８０ｎｍ〜５００ｎｍ、５００ｎｍ〜６００ｎｍ、６００ｎｍ〜８００ｎｍの３つの波長域から選択されるので、青色光、緑色光、赤色光、あるいはこれらの合成光を得ることが可能であり、白色光を得ることも可能となるという効果がある。
【０１２２】
請求項１０の発明は、請求項１ないし請求項９の発明において、前記ナノクリスタル蛍光体は、母体結晶中に発光イオンを添加したドープ型半導体微粒子であるので、前記発光素子から放射される光の波長である励起波長に応じて母体結晶および発光イオンを適宜選択することにより、所望の波長の光の放射が可能となるという効果がある。
【０１２３】
請求項１１の発明は、請求項１ないし請求項９の発明において、前記ナノクリスタル蛍光体は、母体結晶のみからなる非ドープ型半導体微粒子であるので、母体結晶のバンドギャップよりも大きなエネルギを持つ波長の光を照射することで、バンドギャップに相当する波長の光を発光させることが可能となるという効果がある。
【０１２４】
請求項１２の発明は、請求項１ないし請求項１１の発明において、前記発光素子の発光ピーク波長が２００ｎｍ〜５００ｎｍであるので、前記発光素子からの発光を前記ナノクリスタル蛍光体によって効率良く可視光に変換することが可能となるという効果がある。
【図面の簡単な説明】
【図１】実施形態１を示し、（ａ）は概略断面図、（ｂ）は（ａ）の要部拡大図である。
【図２】実施形態２を示す概略断面図である。
【図３】実施形態３を示す概略断面図である。
【図４】実施形態４を示す概略断面図である。
【図５】実施形態５を示す概略断面図である。
【図６】実施形態６を示す概略断面図である。
【図７】実施形態７を示す概略断面図である。
【図８】実施形態８を示す概略断面図である。
【図９】実施形態９を示す概略断面図である。
【図１０】実施形態１０を示す概略断面図である。
【図１１】実施形態１１を示す概略断面図である。
【図１２】実施形態１２を示す概略断面図である。
【図１３】実施形態１３を示す概略断面図である。
【図１４】実施形態１４を示す概略断面図である。
【図１５】実施形態１５を示す概略断面図である。
【図１６】実施形態１６を示す概略断面図である。
【図１７】実施形態１７を示す概略断面図である。
【図１８】実施形態１８を示す概略断面図である。
【図１９】実施形態１９を示す概略断面図である。
【図２０】実施形態２０を示す概略断面図である。
【図２１】実施形態２１を示す概略断面図である。
【図２２】実施形態２２を示す概略断面図である。
【図２３】実施形態２３を示す概略断面図である。
【図２４】実施形態２４を示す概略断面図である。
【図２５】実施形態２５を示す概略断面図である。
【図２６】実施形態２６を示す概略断面図である。
【図２７】実施形態２７を示す概略断面図である。
【図２８】実施形態２８を示す概略断面図である。
【図２９】実施形態２９を示す概略断面図である。
【図３０】実施形態３０を示す概略断面図である。
【図３１】各実施形態の基本概念の説明図である。
【図３２】同上の要部の一例を示す概略構成図である。
【図３３】同上の要部の他の例を示す概略構成図である。
【符号の説明】
１　発光装置
２　発光素子
３　波長変換部
１１　モールド部[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a light emitting device using a light emitting element such as a light emitting diode.
[0002]
[Prior art]
In recent years, blue LED chips that emit blue light and ultraviolet LED chips that emit ultraviolet light have been developed as light-emitting elements using gallium nitride-based compound semiconductors (eg, GaN, InGaN, AlGaN, InGaAlN, etc.). Light emitted from these LED chips is characterized by having a single wavelength emission peak with a narrow reversal width. On the other hand, these LED chips are expected to be applied to display applications and illumination applications, but white light is often required for display applications and illumination applications. Therefore, by combining an LED chip that emits blue light or ultraviolet light and various phosphor powders that emit light using part of the light emitted from the LED chip as an excitation source, the emission color of the LED chip including white light Research and development of light-emitting devices that emit light of different colors are being conducted in various places. This type of light emitting device has advantages such as small size, light weight, and power saving, and is currently widely used as a light source for display, an alternative light source for a small light bulb, a light source for a liquid crystal panel, and the like.
[0003]
A light emitting device of the type combining the LED chip and the phosphor powder as described above is disclosed in, for example, JP-A-5-152609, JP-A-7-99345, and JP-A-10-242513. I have. The light emitting devices disclosed in these publications include a fluorescent light that is excited by light emitted from the LED chip and emits light in a light-transmitting resin (for example, epoxy resin) used as a sealing portion or a molding portion of the LED chip. There is a common feature in that the body powder is dispersed. In such a light emitting device, a part of the light emitted from the LED chip passes through the translucent resin as it is and is radiated to the outside, and the other part of the light emitted from the LED chip is translucent. Light whose wavelength is converted by excitation of the phosphor powder in the resin is also emitted to the outside. Therefore, for example, white light can be obtained as combined light of light emitted from the LED chip and light emitted from the phosphor powder. That is, when the LED chip is a blue LED chip, a phosphor that emits yellow light by using blue light from this LED chip as excitation light or a phosphor that emits red light and a phosphor that emits green light are used. When two types of phosphors are combined, white light can be obtained as synthetic light. When the LED chip is an ultraviolet LED chip, white light can be obtained as synthetic light by combining three types of phosphors that emit red, green, and blue light, respectively, using the ultraviolet light from the LED chip as excitation light. be able to. By obtaining white light in this way, it has become possible in recent years to apply LED chips to lighting applications.
[0004]
[Problems to be solved by the invention]
By the way, the phosphor powder in the above-described light emitting device includes a phosphor having an average particle diameter of several μm (about 5 μm) (hereinafter, referred to as a bulk phosphor) conventionally used for a cathode ray tube (CRT) or a fluorescent lamp. ) Is generally diverted.
[0005]
However, the bulk phosphor has not been developed for the LED, and the above-described light emitting device has a problem that sufficient luminous efficiency cannot be obtained. That is, in the case of a fluorescent lamp, the wavelength of the ultraviolet light generated by the discharge in the tube is mainly 254 nm, and the bulk phosphor is also designed to have high sensitivity at this excitation wavelength. On the other hand, conventionally provided ultraviolet LEDs often emit light having a relatively long wavelength of, for example, about 380 nm, and the bulk phosphor does not have sufficiently high excitation sensitivity in such a wavelength range. Efficiency is not enough.
[0006]
Therefore, in order to increase the luminous efficiency of the light emitting device, it is necessary to rely on finding a phosphor having a novel composition having high excitation sensitivity with respect to the wavelength (excitation wavelength) of light emitted from the LED chip. However, finding such new materials is an extremely difficult and high-risk effort, and it must be said that it is unrealistic, especially for companies.
[0007]
Further, although the amount of heat generated per LED chip is small, when the LED chip is applied to a lighting device, since the luminous flux per LED chip is relatively small, a large number of LED chips are collected and modularized. Required, resulting in a fairly large total heating value. Moreover, as is well known, the bulk phosphor generally has a characteristic (temperature quenching) in which the luminous efficiency is reduced at a high temperature, although the degree varies depending on the material. Therefore, in a lighting device combining a bulk phosphor and an LED chip, a sufficient luminous flux cannot be obtained due to temperature quenching even if the integration density (arrangement density) of the LED chips or the energizing current is increased to increase the luminous flux. There is also a problem.
[0008]
The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a light-emitting device that can increase the luminous efficiency of the entire device as compared with the related art and is less likely to cause a decrease in luminance with a rise in temperature. It is in.
[0009]
[Means for Solving the Problems]
The invention according to claim 1 includes a light-emitting element, and a wavelength conversion section having a large number of fluorescent substances that emit light of a desired wavelength when excited by light emission of the light-emitting element, and the light-emitting substance in the wavelength conversion section has an average particle diameter. Is composed of a nanocrystal phosphor having a thickness of 0.1 nm to 100 nm, and a combined light of light emitted from the light emitting element and light emitted from the nanocrystal phosphor can be obtained; The quantum size effect is exhibited by using nanocrystal phosphor as the fluorescent substance, and the composition is not changed as compared with the case where a bulk phosphor with a particle size of several μm is used as the light emitting substance as before. The luminous efficiency of the fluorescent material can be increased simply by making the particle size nano-sized, and the temperature quenching can be reduced. It is possible to suppress a decrease in luminance with increasing temperature it is and.
[0010]
According to a second aspect of the present invention, in the first aspect of the present invention, the fluorescent substance is made of a nanocrystal fluorescent substance having an average particle diameter of 1 nm to 10 nm. And the quenching of the temperature can be further reduced.
[0011]
According to a third aspect of the present invention, in the first or second aspect of the present invention, the wavelength converter has a modified film that covers a surface of each of the nanocrystal phosphors and is made of a material that transmits ultraviolet light and visible light. Therefore, electrons and holes in the nanocrystal phosphor can be confined, the development of the quantum size effect can be promoted, and sites based on defects on the surface of the nanocrystal phosphor can be capped. As a result, the energy loss is reduced, and the luminous efficiency of the nanocrystal phosphor can be increased. Note that the modified film is not formed by simply attaching a different material physically to the surface of the nanocrystal phosphor, but chemically bonding atoms of the outermost surface of the nanocrystal phosphor with atoms of the different material. And formed. Here, the material of the modification film is a metal oxide (for example, SiO 2). 2 , Al 2 O 3 , TiO 2 And organic acids (eg, carboxylic acid, sulfonic acid, phenol, acid imide, etc.). When a metal oxide is used as the material of the modification film, the nanocrystal phosphor is easily dipped into an organometallic compound solution (alkoxide), filtered, and then heated, so that the surface of the nanocrystal phosphor can be easily formed. In the case where an organic acid is used, the nanocrystal phosphor is easily dipped in an organic acid monomer solution, filtered, and then dried to easily form the nanocrystal phosphor. A modified film can be formed on the body surface.
[0012]
According to a fourth aspect of the present invention, in the third aspect of the present invention, the wavelength conversion section is composed of a large number of fine particles composed of the nanocrystal phosphor and the modification film, so that the nanocrystal phosphor is dispersed. In this case, a quantum size effect can be exhibited without any problem, and the wavelength converter can be easily formed.
[0013]
According to a fifth aspect of the present invention, in the first to third aspects of the present invention, the nanocrystal phosphor is dispersed in a medium that transmits ultraviolet light and visible light. Improvement of luminous efficiency and reduction of temperature quenching by the quantum size effect in the phosphor can be more easily caused.
[0014]
According to a sixth aspect of the present invention, in the invention of the fifth aspect, since the medium is a solid, the dispersion state of the nanocrystal phosphor can be fixed, the light emitting device can be easily handled, and reliability in terms of mechanical strength can be improved. Can be enhanced.
[0015]
According to a seventh aspect of the present invention, in the sixth aspect of the present invention, since the solid is a resin, molding of the solid serving as the medium is facilitated and the weight can be reduced. In addition, as a resin suitable for the solid used as the medium, for example, an epoxy resin, a silicone resin, an acrylic resin, a modified resin thereof, and the like can be given.
[0016]
According to an eighth aspect of the present invention, in the invention of the sixth aspect, since the solid is glass solidified by a sol-gel method, by using glass having better weather resistance than resin, coloring due to discoloration of the medium is prevented. And a longer life can be achieved.
[0017]
According to a ninth aspect of the present invention, in the first to eighth aspects of the present invention, each of the nanocrystal phosphors has three wavelength ranges including the emission peak wavelength of 380 nm to 500 nm, 500 nm to 600 nm, and 600 nm to 800 nm. Since the light is selected from the wavelength range, it is possible to obtain blue light, green light, red light, or a combined light thereof, and it is also possible to obtain white light.
[0018]
According to a tenth aspect of the present invention, in the first to ninth aspects, since the nanocrystal phosphor is a doped semiconductor fine particle having luminescent ions added to a host crystal, light emitted from the light emitting element is provided. By appropriately selecting the host crystal and the luminescent ions according to the excitation wavelength which is the wavelength of the light, light of a desired wavelength can be emitted. The following are examples of the doped semiconductor fine particles.
[0019]
First, as the doped semiconductor fine particles having a peak wavelength at which the emission intensity becomes maximum, of 380 nm to 500 nm, for example, BaMgAl 10 O 17 : Eu, BaMg 2 Al 16 O 27 : Eu, M 5 (PO 4 ) 3 Cl: Eu (where M is at least one element selected from Sr, Ca, Ba, and Mg), M 10 (PO 4 ) 6 Cl 2 : Eu (where M is at least one element selected from Sr, Ca, Ba and Mg), Sr 4 Al 14 O 25 : Eu, (Sr, Ba) Al 2 Si 2 O 8 : Eu, 2SrO.xP 2 O 5 ・ YB 2 O 3 : Eu (where x + y = 1), ZnS: Ag, ZnS: Ag, Al, ZnS: Ag, Cl, (ZnCd) S: Ag, (ZnCd) S: Ag, Al, (ZnCd) S: Ag, Cl And the like.
[0020]
Next, as the doped semiconductor fine particles having a peak wavelength at which the emission intensity is maximum of 500 nm to 600 nm, for example, Sr 2 Si 3 O 8 ・ 2SrCl 2 : Eu, Ba 3 MgSi 2 O 8 : Eu, SrGa 2 S 4 : Eu, Y 2 SiO 5 : Ce, Tb, LaPO 4 : Ce, Tb, MgAl 11 O 19 : Ce, Tb, GdMgB 5 O 10 : Ce, Tb, Zn 2 SiO 4 : Mn, Re 3 M 5 O 12 : Ce (where Re is at least one element selected from Y, Lu, Se, La, Gd, and Sm, and M is at least one element selected from Al, Ga, and In); ZnS: Cu, ZnS: Cu, Cl, ZnS: Cu, Al, ZnS: Cu, Ag, ZnS: Cu, Au, Al, (ZnCd) S: Cu, (ZnCd) S: Cu, Cl, (ZnCd) S : Cu, Al, (ZnCd) S: Cu, Ag, (ZnCd) S: Cu, Au, Al and the like.
[0021]
Examples of the doped semiconductor fine particles having a peak wavelength at which the light emission intensity is maximum of 600 nm to 800 nm include Y-type. 2 O 3 : Eu, Y 2 O 2 S: Eu, Y 2 O 2 S: Eu, Bi, YVO 4 : Eu, YVO 4 : Eu, Bi, Y (PV) O 4 : Eu, Y (PV) O 4 : Eu, Bi, CaS: Eu, SrS: Eu, (CaSr) S: Eu, 3.5MgO.0.5MgF 2 ・ GeO 2 : Mn, Re 3 M 5 O 12 : Ce, Pr (where Re is at least one element selected from Y, Lu, Se, La, Gd and Sm, and M is at least one element selected from Al, Ga and In) ).
[0022]
According to an eleventh aspect of the present invention, in the first to ninth aspects of the present invention, the nanocrystal phosphor is an undoped semiconductor fine particle composed of only a host crystal, and therefore has an energy larger than the band gap of the host crystal. By irradiating light of a wavelength, light of a wavelength corresponding to a band gap can be emitted. The non-doped semiconductor fine particles composed only of the host crystal include, for example, CdTe, CdSe, ZnTe, ZnSe, CdS, ZnS, and the like.
[0023]
According to a twelfth aspect of the present invention, in the first to eleventh aspects, since the emission peak wavelength of the light emitting element is 200 nm to 500 nm, light emission from the light emitting element is efficiently emitted by the nanocrystal phosphor to visible light. Can be converted to This will be described below.
[0024]
As an excitation wavelength capable of exciting a phosphor that emits visible light of 380 nm to 800 nm, ultraviolet light of 380 nm or less is usually required from the theory of Stokes shift. On the other hand, when a light emitting diode is assumed as the ultraviolet light source, the lower limit wavelength that is theoretically possible at present is about 200 nm. Therefore, the phosphor can be excited by the light emitting element having the emission peak wavelength of 200 nm to 380 nm. However, even if the emission peak wavelength of the light-emitting element is in the blue region of 380 nm to 500 nm, a part of this emission energy is used as it is as blue light, and the remaining part is used as a phosphor that emits green light as excitation light and red. Even when combined with a phosphor that emits light at a wavelength of 380 nm to 800 nm, a total emission of 380 to 800 nm can be obtained.
[0025]
BEST MODE FOR CARRYING OUT THE INVENTION
(Basic concept)
First, a basic concept common to the embodiments described below will be described with reference to FIGS.
[0026]
As a result of various studies for solving the above problems, the present inventors have found that the above problems can be solved by using a nanocrystal phosphor instead of using a conventional bulk phosphor. Reached. Therefore, as shown in FIG. 31, the light-emitting device 1 of each embodiment includes a light-emitting element 2 composed of an LED chip and light having a desired wavelength excited by the light emission of the light-emitting element 2 disposed near the light-emitting element 2. And a wavelength conversion unit 3 having a large number of fluorescent materials that emit light.
[0027]
The light-emitting element 2 is configured by, for example, an LED chip that emits ultraviolet light or blue light having an emission peak wavelength of 200 nm to 500 nm, but may be an LED chip of another emission color. As shown in FIGS. 32 and 33, the wavelength conversion unit 3 includes a large number of nanocrystal phosphors 31 that are excited by the light emitting element 2 and emit light, and convert a part of the light emitted from the light emitting element 2 to the excitation light. Has a wavelength conversion function of emitting light of a desired wavelength different from the excitation light. Here, as for the nanocrystal phosphor in the wavelength conversion unit 3, if the phosphor has an average particle diameter of 0.1 nm to 100 nm, the quantum size effect can be exhibited to improve the luminous efficiency and reduce the temperature quenching. In order to remarkably exhibit the effect, it is desirable that the average particle diameter is 1 nm to 10 nm. The average particle diameter of the above-mentioned bulk phosphor is on the order of several μm, and the luminous efficiency is maximized at about 5 μm, and the luminous efficiency is reduced when it is less than 1 μm.
[0028]
By the way, it is preferable that the wavelength conversion unit 3 has a large number of nanocrystal phosphors 31 dispersed therein without aggregation, for example, by dispersing the nanocrystal phosphors 31 in a medium that transmits ultraviolet light and visible light. If so, the luminous efficiency can be further increased and the temperature quenching can be further reduced. Here, if the medium is solid, the dispersion state of the nanocrystal phosphor 31 can be fixed, the light emitting device 1 can be easily handled, and the reliability in terms of mechanical strength can be increased. In addition, as the solid serving as the medium, for example, if a resin resin such as an epoxy resin, a silicone resin, or an acrylic resin is employed, molding of the solid serving as the medium is facilitated, and the weight can be reduced. In addition, if glass solidified by a sol-gel method is employed as the solid serving as the medium, the use of glass having excellent weather resistance compared to resin does not cause coloring due to discoloration of the medium and extends the life. be able to.
[0029]
However, as shown in FIG. 33, when the wavelength conversion unit 3 has a large number of modification films 33 made of a material that covers the surface of each nanocrystal phosphor 31 and transmits ultraviolet light and visible light. In addition, it is possible to confine electrons and holes in the nanocrystal phosphor 31, promote the development of the quantum size effect, and to cap a site based on a defect on the surface of the nanocrystal phosphor 31. Energy loss is reduced, and the luminous efficiency of the nanocrystal phosphor 31 can be increased. The modification film 33 is not formed by simply attaching a different material physically to the surface of the nanocrystal phosphor 31, but is formed by chemically bonding the atoms on the outermost surface of the nanocrystal phosphor 31 to the atoms of the different material. And formed. Here, the material of the modification film is a metal oxide (for example, SiO 2). 2 , Al 2 O 3 , TiO 2 And organic acids (eg, carboxylic acid, sulfonic acid, phenol, acid imide, etc.). When a metal oxide is employed as the material of the modification film 33, the nanocrystal phosphor 31 is easily dipped in an organometallic compound solution (alkoxide), filtered, and then heated, so that the nanocrystal phosphor 31 can be easily formed. A modified film 33 can be formed on the surface, and when an organic acid is used, the nanocrystal phosphor 31 can be easily dipped in an organic acid monomer solution, filtered, and then dried, so that the nanocrystal phosphor 31 can be easily formed. The modification film 33 can be formed on the surface of the phosphor 31. When the wavelength conversion unit 3 is composed of a large number of fine particles composed of the nanocrystal phosphor 31 and the modification film 33, the quantum size effect can be exhibited without dispersing the nanocrystal phosphor 31. Yes, the wavelength converter can be easily formed.
[0030]
In the above-described light emitting device 1, a part 4 a of the light emitted from the light emitting element 2 passes through the wavelength conversion unit 3 as it is and is emitted to the outside of the light emitting device 1. In the light emitting device 1, another part 4 b of the light emitted from the light emitting element 2 is absorbed by the nanocrystal phosphor 31 of the wavelength conversion unit 3 to excite the nanocrystal phosphor 31, and the nanocrystal phosphor 31 is excited. At 31, the light 5 is converted into light 5 having a desired wavelength and emitted to the outside of the light emitting device 1.
[0031]
Therefore, the light emitting device 1 emits a combined light 6 of the light 4a emitted from the light emitting element 2 and transmitted through the wavelength converter 3 and the light 5 emitted from the nanocrystal phosphor of the wavelength converter 4. That is, the emission color of the light emitting device 1 as a whole is determined by the emission color of the light emitting element 2 and the emission color of the nanocrystal phosphor. The light 4a emitted from the light emitting element 2 and transmitted through the wavelength conversion unit 3 is not always necessary.
[0032]
By the way, if the wavelength range including the emission peak wavelength of each nanocrystal phosphor 31 is selected from any of the three wavelength ranges of 380 nm to 500 nm, 500 nm to 600 nm, and 600 nm to 800 nm, the light emitting device 1 as a whole It is possible to obtain blue light, green light, red light, or a combined light thereof, and it is also possible to obtain white light.
[0033]
Further, as the nanocrystal phosphor 31, a doped semiconductor fine particle in which light-emitting ions are added to a host crystal may be used, or an undoped semiconductor fine particle consisting only of the host crystal may be used. Here, in the case where doped semiconductor fine particles are employed as the nanocrystal phosphor 31, by appropriately selecting the host crystal and the luminescent ions according to the excitation wavelength which is the wavelength of the light emitted from the light emitting element 2, Emission of light having a wavelength of On the other hand, when undoped semiconductor fine particles are employed as the nanocrystal phosphor 31, light of a wavelength corresponding to the band gap is emitted by irradiating light of a wavelength having energy larger than the band gap of the host crystal. It is possible to do.
[0034]
The above-mentioned doped semiconductor fine particles include, for example, the following.
[0035]
Examples of the doped semiconductor fine particles having a peak wavelength at which the emission intensity becomes maximum are 380 nm to 500 nm include, for example, BaMgAl. 10 O 17 : Eu, BaMg 2 Al 16 O 27 : Eu, M 5 (PO 4 ) 3 Cl: Eu (where M is at least one element selected from Sr, Ca, Ba, and Mg), M 10 (PO 4 ) 6 Cl 2 : Eu (where M is at least one element selected from Sr, Ca, Ba and Mg), Sr 4 Al 14 O 25 : Eu, (Sr, Ba) Al 2 Si 2 O 8 : Eu, 2SrO.xP 2 O 5 ・ YB 2 O 3 : Eu (where x + y = 1), ZnS: Ag, ZnS: Ag, Al, ZnS: Ag, Cl, (ZnCd) S: Ag, (ZnCd) S: Ag, Al, (ZnCd) S: Ag, Cl And the like.
[0036]
Examples of the doped semiconductor fine particles having a peak wavelength at which the emission intensity is maximum of 500 nm to 600 nm include, for example, Sr 2 Si 3 O 8 ・ 2SrCl 2 : Eu, Ba 3 MgSi 2 O 8 : Eu, SrGa 2 S 4 : Eu, Y 2 SiO 5 : Ce, Tb, LaPO 4 : Ce, Tb, MgAl 11 O 19 : Ce, Tb, GdMgB 5 O 10 : Ce, Tb, Zn 2 SiO 4 : Mn, Re 3 M 5 O 12 : Ce (where Re is at least one element selected from Y, Lu, Se, La, Gd, and Sm, and M is at least one element selected from Al, Ga, and In); ZnS: Cu, ZnS: Cu, Cl, ZnS: Cu, Al, ZnS: Cu, Ag, ZnS: Cu, Au, Al, (ZnCd) S: Cu, (ZnCd) S: Cu, Cl, (ZnCd) S : Cu, Al, (ZnCd) S: Cu, Ag, (ZnCd) S: Cu, Au, Al and the like.
[0037]
Examples of the doped semiconductor fine particles having a peak wavelength at which the emission intensity is maximized are 600 nm to 800 nm. 2 O 3 : Eu, Y 2 O 2 S: Eu, Y 2 O 2 S: Eu, Bi, YVO 4 : Eu, YVO 4 : Eu, Bi, Y (PV) O 4 : Eu, Y (PV) O 4 : Eu, Bi, CaS: Eu, SrS: Eu, (CaSr) S: Eu, 3.5MgO.0.5MgF 2 ・ GeO 2 : Mn, Re 3 M 5 O 12 : Ce, Pr (where Re is at least one element selected from Y, Lu, Se, La, Gd and Sm, and M is at least one element selected from Al, Ga and In) ).
[0038]
Examples of the undoped semiconductor fine particles include CdTe, CdSe, ZnTe, ZnSe, CdS, and ZnS.
[0039]
(Embodiment 1)
As shown in FIG. 1A, the light emitting device 1 according to the present embodiment includes a light emitting element 2 and a resin (for example, an epoxy resin, a silicone resin, or the like) transparent to light emitted from the light emitting element 2. And a molded part 11 formed by molding a sealing resin into a shell shape. The mold section 11 covers the light emitting element 2, and the light emitting element 2 is electrically connected to lead terminals 12, 13 formed of a conductive material. The lead terminals 12, 13 are formed by a lead frame. During the molding of the mold portion 11, after the sealing resin is filled, the sealing resin is heated or the sealing resin is irradiated with ultraviolet rays to solidify the sealing resin.
[0040]
The light emitting element 2 is a gallium nitride-based LED chip, in which an n-type semiconductor layer (not shown) is formed on the lower surface side and a p-type semiconductor layer (not shown) is formed on the upper surface side in FIG. The light output is taken out from the p-type semiconductor layer side. The rear surface of the light emitting element 2 is bonded to a cup (mirror) 14 attached to the front end of the lead terminal 13 by die bonding. In the light emitting element 2, conductive wires (for example, gold wires) 15, 15 are connected to the p-type semiconductor layer and the n-type semiconductor layer, respectively, by bonding, and the light emitting element 2 is connected to the light emitting element 2 via the conductive wires 15, 15. The lead terminals 12 and 13 are electrically connected. The conductive wires 15 have a small cross-sectional area so as not to hinder the light emitted from the light emitting element 2.
[0041]
The cup portion 14 has a function of reflecting light emitted from the side surface and the rear surface of the light emitting element 2 forward, and the light emitted from the LED chip and the light reflected forward by the inner surface of the cup portion 14 serve as a lens. The light is radiated forward from the mold part 11 through the front end of the functioning mold part 11. The mold part 11 covers the light emitting element 2 together with the cup part 14, the conductive wires 15, 15, and a part of the lead terminals 12, 13, and the characteristic deterioration due to the light emitting element 2 reacting with atmospheric moisture or the like. Has been prevented. The rear ends of the lead terminals 12 and 13 project from the rear surface of the molded portion 11 to the outside.
[0042]
By the way, as shown in FIG. 1B, the surface of the light emitting element 2 other than the rear surface is covered with a wavelength conversion section 3 made of a phosphor thin film layer. Here, the phosphor thin film layer constituting the wavelength converter 3 has a large number of nanocrystal phosphors. The phosphor thin film layer may be formed by, for example, dipping with a slurry or a sputtering method.
[0043]
The light emitting element 2 uses, as a substrate, a substrate (for example, a sapphire substrate) that is transparent to light emitted from the light emitting section having each of the semiconductor layers, and the light emitted from the light emitting section is radiated in all directions. However, part of the light absorbed by the nanocrystal phosphor 31 (see FIG. 32) of the wavelength converter 3 excites the nanocrystal phosphor 31 and emits light having a wavelength specific to the nanocrystal phosphor 31. The light emitted by the wavelength converter 3 is directly radiated forward or reflected by the mirror 14 and radiated forward. In short, the light emitting device 1 can obtain a combined light of the light emitted from the light emitting element 2 and the light emitted from the wavelength converter 3. Note that, in the present embodiment, the nanocrystal phosphor 31 constitutes a phosphor.
[0044]
Thus, the light emitting device 1 of the present embodiment includes the light emitting element 2 and the wavelength converter 3 having a fluorescent substance that emits light of a desired wavelength when excited by the light emitted from the light emitting element 2. Since the nanocrystal phosphor 31 having an average particle diameter of 0.1 nm to 100 nm is used as the fluorescent substance, a combined light of the light emitted from the light emitting element 2 and the light emitted from the nanocrystal phosphor 31 is obtained. In addition, the use of the nanocrystal phosphor 31 as the fluorescent substance in the wavelength conversion section 3 produces a quantum size effect, and a conventional bulk fluorescent substance having a particle diameter of several μm is used as the fluorescent substance. The luminous efficiency of the fluorescent substance can be increased and the temperature quenching can be reduced simply by reducing the particle size to nano size without changing the composition compared to the conventional case. The decrease in luminance with increasing temperature it is possible to increase the luminous efficiency of the entire light emitting device 1 can be suppressed.
[0045]
(Embodiment 2)
The basic configuration of the light emitting device 1 of the present embodiment is substantially the same as that of the first embodiment, and the point that the wavelength converter 3 is provided so as to cover the light emitting element 2 in the cup portion 14 as shown in FIG. There is a feature. Here, the wavelength conversion section 3 is configured by a medium 32 filled in the cup section 14 and transmitting ultraviolet light and visible light, and a large number of nanocrystal phosphors 31 substantially uniformly dispersed in the medium 32. is there. Since other configurations are the same as those of the first embodiment, the same reference numerals are given to the same components as those of the first embodiment, and the description will be omitted.
[0046]
Thus, in the light emitting device 1 of the present embodiment, similarly to the first embodiment, the composition is changed as compared with the conventional case where a bulk phosphor having a particle diameter of several μm is used as the fluorescent material in the wavelength conversion unit 3. Since the luminous efficiency of the fluorescent substance can be increased and the temperature quenching can be reduced only by reducing the particle size to nano size without any problem, the luminous efficiency of the light emitting device 1 as a whole can be increased as compared with the related art, and the temperature can be increased. It is possible to suppress a decrease in luminance due to the increase.
[0047]
(Embodiment 3)
The basic configuration of the light emitting device 1 of the present embodiment is substantially the same as that of the first embodiment, and as shown in FIG. 3, a large number of nanocrystal phosphors 31 are substantially uniformly dispersed in a mold portion 11. The feature is that the unit 11 also serves as the wavelength conversion unit 3. Since other configurations are the same as those of the first embodiment, the same reference numerals are given to the same components as those of the first embodiment, and the description will be omitted.
[0048]
Thus, in the light emitting device 1 of the present embodiment, similarly to the first embodiment, the composition is changed as compared with the conventional case where a bulk phosphor having a particle diameter of several μm is used as the fluorescent material in the wavelength conversion unit 3. Since the luminous efficiency of the fluorescent substance can be increased and the temperature quenching can be reduced only by reducing the particle size to nano size without any problem, the luminous efficiency of the light emitting device 1 as a whole can be increased as compared with the related art, and the temperature can be increased. It is possible to suppress a decrease in luminance due to the increase.
[0049]
(Embodiment 4)
The basic configuration of the light emitting device 1 of the present embodiment is substantially the same as that of the first embodiment. As shown in FIG. 4, the wavelength conversion unit 3 has a cup-like shape that covers the entire surface other than the rear surface of the mold unit 11. The difference is that they are formed. Here, in manufacturing the light emitting device 1 of the present embodiment, the wavelength conversion unit 3 formed in a cup shape in advance may be attached to the mold unit 11, or the nanocrystal phosphor 31 (FIG. 32) may be applied to the surface of the mold section 11 and then dried. Since other configurations are the same as those of the first embodiment, the same reference numerals are given to the same components as those of the first embodiment, and the description will be omitted.
[0050]
Thus, in the light emitting device 1 of the present embodiment, similarly to the first embodiment, the composition is changed as compared with the conventional case where a bulk phosphor having a particle diameter of several μm is used as the fluorescent material in the wavelength conversion unit 3. Since the luminous efficiency of the fluorescent substance can be increased and the temperature quenching can be reduced only by reducing the particle size to nano size without any problem, the luminous efficiency of the light emitting device 1 as a whole can be increased as compared with the related art, and the temperature can be increased. It is possible to suppress a decrease in luminance due to the increase.
[0051]
(Embodiment 5)
In the light emitting device 1 of the present embodiment, as shown in FIG. 5, the light emitting element 2 is surface-mounted on an insulating substrate 16 on which a printed wiring (conductive pattern) 17 is provided. Here, the light emitting element 2 is a gallium nitride-based LED chip as in the first embodiment, and an n-type semiconductor layer (not shown) on the lower surface side and a p-type semiconductor layer (not shown) on the upper surface side in FIG. ) Is formed, and the p-type semiconductor layer (not shown) and the n-type semiconductor layer (not shown) of the light emitting portion are electrically connected to the printed wirings 17 via the conductive wires 15, respectively. Have been.
[0052]
A frame member 18 surrounding the light emitting element 2 is fixed on the insulating substrate 16, and only the periphery of the light emitting element 2 is covered by the wavelength converter 3 inside the frame member 18, and the periphery of the wavelength converter 3 is A sealing portion 19 made of a sealing resin (for example, epoxy resin, silicone resin, or the like) transparent to visible light and ultraviolet light is provided.
[0053]
Here, the wavelength conversion section 3 may be formed only by the nanocrystal phosphor 31 (see FIG. 32) by, for example, being formed by a method such as dipping with slurry, or may transmit ultraviolet light and visible light. A structure in which a number of nanocrystal phosphors 31 are substantially uniformly dispersed in a medium to be formed may be used.
[0054]
Thus, in the light emitting device 1 of the present embodiment, as in the first embodiment, the light emitting element 2 and the wavelength conversion unit 3 having a fluorescent substance that emits light of a desired wavelength when excited by the light emission of the light emitting element 2 are used. Since the nanocrystal phosphor 31 having an average particle diameter of 0.1 nm to 100 nm is used as the fluorescent substance in the wavelength conversion unit 3, the light emitted from the light emitting element 2 and the nanocrystal phosphor 31 are emitted. Synthetic light with light can be obtained, and a quantum size effect is exhibited by using the nanocrystal phosphor 31 as a fluorescent substance, and a bulk phosphor having a particle diameter of several μm as a conventional fluorescent substance is used. Compared to the case of using, it is possible to increase the luminous efficiency of the fluorescent substance and reduce the temperature quenching simply by reducing the particle size to nano size without changing the composition. It is possible to suppress a decrease in luminance with increasing temperature it is possible to increase the luminous efficiency of the entire light-emitting device 1 as compared with the prior art.
[0055]
(Embodiment 6)
The basic configuration of the light emitting device 1 of the present embodiment is substantially the same as that of the fifth embodiment. As shown in FIG. 6, a large number of nanocrystal phosphors 31 are substantially uniformly dispersed in a sealing portion 19, It is characterized in that the sealing part 19 also serves as the wavelength conversion part 3. The other configuration is the same as that of the fifth embodiment. Therefore, the same components as those of the fifth embodiment are denoted by the same reference numerals, and description thereof will be omitted.
[0056]
Thus, in the light emitting device 1 of the present embodiment, similarly to the fifth embodiment, the composition is changed as compared with the conventional case where a bulk phosphor having a particle diameter of several μm is used as the fluorescent material in the wavelength conversion unit 3. Since the luminous efficiency of the fluorescent substance can be increased and the temperature quenching can be reduced only by reducing the particle size to nano size without any problem, the luminous efficiency of the light emitting device 1 as a whole can be increased as compared with the related art, and the temperature can be increased. It is possible to suppress a decrease in luminance due to the increase.
[0057]
(Embodiment 7)
The basic configuration of the light emitting device 1 of the present embodiment is substantially the same as that of the fifth embodiment. As shown in FIG. 7, the front surface of the sealing portion 19 (upper surface in FIG. 7) and the front surface of the frame member 18 (in FIG. The difference is that a lens unit 43 having a front surface that is convex forward is disposed across the upper surface (upper surface). Here, the material of the lens unit 43 is not particularly limited as long as it is transparent to ultraviolet light and visible light and there is no practical problem in terms of heat resistance and weather resistance. May be adopted, or a material different from that of the sealing portion 19 may be adopted. Note that the same components as those of the fifth embodiment are denoted by the same reference numerals, and description thereof is omitted.
[0058]
However, in the light emitting device 1 of the present embodiment, similarly to the fifth embodiment, the composition is changed as compared with the conventional case where a bulk phosphor having a particle diameter of several μm is used as the fluorescent material in the wavelength conversion unit 3. By simply increasing the particle size to nano-size without increasing the luminous efficiency of the fluorescent substance and reducing the temperature quenching, the luminous efficiency of the entire device can be increased and the temperature can be increased. The accompanying decrease in luminance can be suppressed. In addition, in the light emitting device 1 of the present embodiment, since the lens unit 43 is provided in front of the light emitting element 2 and the wavelength conversion unit 3, directivity control of light emission can be performed, and light distribution with excellent directivity can be achieved. There is an advantage that it can be obtained.
[0059]
(Embodiment 8)
The basic configuration of the light emitting device 1 of the present embodiment is substantially the same as that of the sixth embodiment. As shown in FIG. 8, the front surface of the sealing portion 19 (upper surface in FIG. 8) and the front surface of the frame member 18 (in FIG. The difference is that a lens unit 43 having a front surface that is convex forward is disposed across the upper surface (upper surface). Here, the material of the lens unit 43 is not particularly limited as long as it is transparent to ultraviolet light and visible light and there is no practical problem in terms of heat resistance and weather resistance. May be adopted, or a material different from that of the sealing portion 19 may be adopted. Note that the same components as those in the sixth embodiment are denoted by the same reference numerals, and description thereof is omitted.
[0060]
However, in the light emitting device 1 of the present embodiment, similarly to the sixth embodiment, the composition is changed as compared with the conventional case where a bulk phosphor having a particle diameter of several μm is used as the fluorescent material in the wavelength conversion unit 3. Since the luminous efficiency of the fluorescent substance can be increased and the temperature quenching can be reduced only by reducing the particle size to nano size without any problem, the luminous efficiency of the light emitting device 1 as a whole can be increased as compared with the related art, and the temperature can be increased. It is possible to suppress a decrease in luminance due to the increase. In addition, in the light emitting device 1 of the present embodiment, since the lens unit 43 is provided in front of the light emitting element 2 and the wavelength conversion unit 3, directivity control of light emission can be performed, and light distribution with excellent directivity can be achieved. There is an advantage that it can be obtained.
[0061]
(Embodiment 9)
The basic configuration of the light emitting device 1 of the present embodiment is substantially the same as that of the fifth embodiment. As shown in FIG. 9, the front surface of the sealing portion 19 (upper surface in FIG. 9) and the front surface of the frame member 18 (in FIG. The difference is that a lens unit 43 having a front surface that is convex forward is disposed across the upper surface (upper surface). Also, in the present embodiment, instead of covering the periphery of the light emitting element 2 with the wavelength conversion unit 3, the lens unit 43 is provided in a large number in a medium (for example, epoxy resin or silicone resin) transparent to ultraviolet light and visible light. Is different in that the nanocrystal phosphor 31 is substantially uniformly dispersed. That is, the present embodiment is different in that the lens unit 43 also serves as the wavelength conversion unit 3. Here, the medium of the lens unit 43 is not particularly limited as long as it is transparent to ultraviolet light and visible light and there is no practical problem in terms of heat resistance and weather resistance. May be adopted, or a material different from that of the sealing portion 19 may be adopted. Note that the same components as those of the fifth embodiment are denoted by the same reference numerals, and description thereof is omitted.
[0062]
However, in the light emitting device 1 of the present embodiment, similarly to the fifth embodiment, the composition is changed as compared with the conventional case where a bulk phosphor having a particle diameter of several μm is used as the fluorescent material in the wavelength conversion unit 3. Since the luminous efficiency of the fluorescent substance can be increased and the temperature quenching can be reduced only by reducing the particle size to nano size without any problem, the luminous efficiency of the light emitting device 1 as a whole can be increased as compared with the related art, and the temperature can be increased. It is possible to suppress a decrease in luminance due to the increase. In addition, in the light emitting device 1 of the present embodiment, the provision of the lens unit 43 in front of the light emitting element 2 enables the directivity control of light emission to be performed, and has an advantage that a light distribution with excellent directivity can be obtained. is there.
[0063]
(Embodiment 10)
The basic configuration of the light emitting device 1 of the present embodiment is substantially the same as that of the fifth embodiment. As shown in FIG. 10, the front surface of the sealing portion 19 (upper surface in FIG. 9) and the front surface of the frame member 18 (in FIG. The difference is that a lens unit 43 having a front surface that is convex forward is disposed across the upper surface (upper surface). Further, in the present embodiment, the sealing portion 19 is formed by dispersing a large number of nanocrystal phosphors 31 substantially uniformly in a medium (for example, epoxy resin, silicone resin, or the like) transparent to ultraviolet light and visible light. The lens unit 43 also differs in that a large number of nanocrystal phosphors 31 are substantially uniformly dispersed in a medium (for example, epoxy resin, silicone resin, or the like) transparent to ultraviolet light and visible light. I do. That is, the present embodiment is different in that the sealing unit 19 and the lens unit 43 also serve as the wavelength conversion unit 3. Here, the medium of the lens unit 43 is not particularly limited as long as it is transparent to ultraviolet light and visible light and there is no practical problem in terms of heat resistance and weather resistance. May be adopted, or a material different from that of the sealing portion 19 may be adopted. Note that the same components as those of the fifth embodiment are denoted by the same reference numerals, and description thereof is omitted.
[0064]
However, in the light emitting device 1 of the present embodiment, similarly to the fifth embodiment, the composition is changed as compared with the conventional case where a bulk phosphor having a particle diameter of several μm is used as the fluorescent material in the wavelength conversion unit 3. Since the luminous efficiency of the fluorescent substance can be increased and the temperature quenching can be reduced only by reducing the particle size to nano size without any problem, the luminous efficiency of the light emitting device 1 as a whole can be increased as compared with the related art, and the temperature can be increased. It is possible to suppress a decrease in luminance due to the increase. Moreover, in the light emitting device 1 of the present embodiment, the directivity of light emission can be controlled by providing the lens unit 43 in front of the sealing unit 19 forming the light emitting element 2 and the wavelength conversion unit 3. There is an advantage that a light distribution with excellent characteristics can be obtained.
[0065]
(Embodiment 11)
The basic configuration of the light emitting device 1 of the present embodiment is substantially the same as that of the ninth embodiment. As shown in FIG. The difference is that 43 is hermetically sealed to the frame member 18. Here, it is desirable that the cavity 26 be in a vacuum state or filled with an inert gas. Note that the same components as those in the ninth embodiment are denoted by the same reference numerals, and description thereof is omitted.
[0066]
Thus, in the present embodiment, as in the ninth embodiment, the particle size of the wavelength conversion unit 3 is reduced without changing the composition as compared with a conventional case where a bulk phosphor having a particle size of several μm is used as the fluorescent material. Since the luminous efficiency of the fluorescent substance can be increased and the temperature quenching can be reduced only by reducing the diameter to the nano size, the luminous efficiency of the light emitting device 1 as a whole can be increased as compared with the related art, and the luminance accompanying the temperature rise can be increased. Can be suppressed. In addition, in the light emitting device 1 of the present embodiment, the provision of the lens unit 43 in front of the light emitting element 2 enables the directivity control of light emission to be performed, and has an advantage that a light distribution with excellent directivity can be obtained. is there.
[0067]
(Embodiment 12)
The basic configuration of the light emitting device 1 of the present embodiment is substantially the same as that of the fifth embodiment, and does not use the frame member 18 (see FIG. 5) described in the fifth embodiment. The shape of the portion 19 is different. That is, the sealing portion 19 in the present embodiment is formed in a truncated cone shape, and is provided so as to cover the wavelength conversion portion 3 and the conductive wires 15 formed around the light emitting element 2. Here, the wavelength conversion section 3 may be formed only by the nanocrystal phosphor 31 (see FIG. 32) by, for example, being formed by a method such as dipping with slurry, or may transmit ultraviolet light and visible light. A structure in which a number of nanocrystal phosphors 31 are substantially uniformly dispersed in a medium to be formed may be used. The sealing portion 19 is formed by using a molding die or the like to solidify a resin (light-transmitting resin) that is transparent to ultraviolet light and visible light, such as an epoxy resin or a silicone resin. Note that the same components as those of the fifth embodiment are denoted by the same reference numerals, and description thereof is omitted.
[0068]
Thus, in the light emitting device 1 of the present embodiment, similarly to the fifth embodiment, the composition is changed as compared with the conventional case where a bulk phosphor having a particle diameter of several μm is used as the fluorescent material in the wavelength conversion unit 3. Since the luminous efficiency of the fluorescent substance can be increased and the temperature quenching can be reduced only by reducing the particle size to nano size without performing, the luminous efficiency of the entire light emitting device 1 can be increased as compared with the related art. It is possible to suppress a decrease in luminance due to a rise in temperature. Further, in the light emitting device 1 of the present embodiment, the number of components can be reduced as compared with the fifth embodiment, and the size and weight can be reduced.
(Embodiment 13)
The basic configuration of the light emitting device 1 of the present embodiment is substantially the same as that of the twelfth embodiment, and instead of covering only the periphery of the light emitting element 2 with the wavelength conversion unit 3 as shown in FIG. The difference is that a large number of nanocrystal phosphors 31 are substantially uniformly dispersed in a sealing resin (for example, epoxy resin, silicone resin, etc.) transparent to ultraviolet light and visible light. That is, the present embodiment is different in that the sealing unit 19 also serves as the wavelength conversion unit 3.
[0069]
Thus, in the light emitting device 1 of the present embodiment, similarly to the twelfth embodiment, the composition is changed as compared with the conventional case where a bulk phosphor having a particle diameter of several μm is used as the fluorescent material in the wavelength conversion unit 3. Since the luminous efficiency of the fluorescent substance can be increased and the temperature quenching can be reduced only by reducing the particle size to nano size without performing, the luminous efficiency of the entire light emitting device 1 can be increased as compared with the related art. A decrease in luminance due to a temperature rise can be suppressed, and the number of components can be reduced as compared with the fifth embodiment, so that downsizing and weight reduction can be achieved.
[0070]
(Embodiment 14)
The basic configuration of the light emitting device 1 of the present embodiment is substantially the same as that of the twelfth embodiment, and as shown in FIG. 14, a lens whose front surface is convex forward on the front surface (the upper surface in FIG. 14) of the sealing portion 19. The difference is that a part 43 is provided. Here, the lens unit 43 is provided such that the rear surface (the lower surface in FIG. 14) is in close contact with the front surface of the sealing unit 19. The lens portion 43 may be formed integrally with the sealing portion 19 using the same material as the sealing portion 19, or may be formed using the same material as the sealing portion 19 or a different material after forming the sealing portion 19. It may be formed. Note that the same components as those of the twelfth embodiment are denoted by the same reference numerals, and description thereof is omitted.
[0071]
Thus, in the light emitting device 1 of the present embodiment, similarly to the twelfth embodiment, the composition is changed as compared with the conventional case where a bulk phosphor having a particle diameter of several μm is used as the fluorescent material in the wavelength conversion unit 3. Since the luminous efficiency of the fluorescent substance can be increased and the temperature quenching can be reduced only by reducing the particle size to nano size without any problem, the luminous efficiency of the light emitting device 1 as a whole can be increased as compared with the related art, and the temperature can be increased. The decrease in luminance due to the rise can be suppressed, and the directivity control of light emission can be performed by providing the lens unit 43 in front of the light emitting element 2 and the wavelength conversion unit 3, and the directivity is excellent. There is an advantage that an improved light distribution can be obtained.
[0072]
(Embodiment 15)
The basic configuration of the light emitting device 1 of the present embodiment is substantially the same as that of the thirteenth embodiment. As shown in FIG. 15, the front surface (the upper surface in FIG. 15) of the sealing portion 19 also serving as the wavelength converter 3 has a front surface. The difference is that a lens portion 43 that is convex forward is provided. Here, the lens portion 43 is provided such that the rear surface (the lower surface in FIG. 15) is in close contact with the front surface of the sealing portion 19. After the formation of the sealing portion 19, the lens portion 43 may be formed using a translucent resin (for example, an epoxy resin, a silicone resin, or the like) transparent to ultraviolet light and visible light. Note that the same components as those of the thirteenth embodiment are denoted by the same reference numerals, and description thereof is omitted.
[0073]
Thus, in the light emitting device 1 of the present embodiment, similarly to the thirteenth embodiment, the composition is changed as compared with the conventional case where a bulk phosphor having a particle diameter of several μm is used as the fluorescent substance in the wavelength conversion unit 3. Since the luminous efficiency of the fluorescent substance can be increased and the temperature quenching can be reduced only by reducing the particle size to nano size without any problem, the luminous efficiency of the light emitting device 1 as a whole can be increased as compared with the related art, and the temperature can be increased. It is possible to suppress a decrease in luminance due to the increase. Further, by providing the lens unit 43 in front of the light emitting element 2 and the wavelength conversion unit 3, it is possible to control the directivity of light emission, and there is an advantage that a light distribution with excellent directivity can be obtained.
[0074]
(Embodiment 16)
The basic configuration of the light emitting device 1 of the present embodiment is substantially the same as that of the fifteenth embodiment. As shown in FIG. 16, the lens unit 43 is made of a medium (for example, epoxy resin, silicone) transparent to ultraviolet light and visible light. The difference is that a large number of nanocrystal phosphors 31 are substantially uniformly dispersed in a resin or the like. That is, the present embodiment is different in that the sealing unit 19 and the lens unit 43 also serve as the wavelength conversion unit 3. Here, the medium of the lens unit 43 is not particularly limited as long as it is transparent to ultraviolet light and visible light and there is no practical problem in terms of heat resistance and weather resistance. May be adopted, or a material different from that of the sealing portion 19 may be adopted. The same components as those in the fifteenth embodiment are denoted by the same reference numerals, and the description is omitted.
[0075]
However, in the light emitting device 1 of the present embodiment, similarly to the fifteenth embodiment, the composition is changed as compared with the conventional case where a bulk phosphor having a particle diameter of several μm is used as the fluorescent material in the wavelength conversion unit 3. Since the luminous efficiency of the fluorescent substance can be increased and the temperature quenching can be reduced only by reducing the particle size to nano size without any problem, the luminous efficiency of the light emitting device 1 as a whole can be increased as compared with the related art, and the temperature can be increased. It is possible to suppress a decrease in luminance due to the increase. In addition, by providing the lens unit 43, it is possible to control the directivity of light emission, and there is an advantage that a light distribution with excellent directivity can be obtained.
[0076]
(Embodiment 17)
The basic configuration of the light emitting device 1 of the present embodiment is substantially the same as that of the fifth embodiment. As shown in FIG. 17, a recess 16a for accommodating the light emitting element 2 is provided on one surface of the insulating substrate 16 (the upper surface in FIG. 17). The difference is that the light emitting element 2 is mounted on the bottom of the recess 16a. Here, the printed wirings (conductive patterns) 17, 17 formed on the insulating substrate 16 extend to the bottom of the recess 16a. The light-emitting element 2 is a gallium nitride-based LED chip as in the fifth embodiment, and has an n-type semiconductor layer (not shown) on the lower surface and a p-type semiconductor layer (not shown) on the upper surface in FIG. Are formed, and a p-type semiconductor layer (not shown) and an n-type semiconductor layer (not shown) of the light emitting portion are electrically connected to printed wirings 17 via conductive wires 15, respectively. ing. In the present embodiment, the wavelength converter 3 is provided around the light emitting element 3 and a transparent sealing resin (for example, epoxy resin) is provided in the recess 16 a so as to cover the wavelength converter 3 and the conductive wires 15. (A resin, a silicone resin, etc.). The wavelength conversion unit 3 may be formed only by the nanocrystal phosphor 31 (see FIG. 31) by forming it by a method such as dipping with a slurry, for example, or in a medium that transmits ultraviolet light and visible light. A structure in which a large number of nanocrystal phosphors 31 are substantially uniformly dispersed may be used. Note that the same components as those of the fifth embodiment are denoted by the same reference numerals, and description thereof is omitted.
[0077]
However, in the light emitting device 1 of the present embodiment, similarly to the fifth embodiment, the composition is changed as compared with the conventional case where a bulk phosphor having a particle diameter of several μm is used as the fluorescent material in the wavelength conversion unit 3. Since the luminous efficiency of the fluorescent substance can be increased and the temperature quenching can be reduced only by reducing the particle size to nano size without any problem, the luminous efficiency of the light emitting device 1 as a whole can be increased as compared with the related art, and the temperature can be increased. It is possible to suppress a decrease in luminance due to the increase.
[0078]
Further, in the present embodiment, since the sealing portion 19 is formed by filling the above-described sealing resin into the recess 16 a formed on one surface of the insulating substrate 16, the frame member 18 ( The sealing portion 19 can be formed without using the molding die described in the embodiment 12 or the twelfth embodiment, and the sealing process of the light emitting element 2 can be performed more easily than in the fifth and twelfth embodiments. There are advantages.
[0079]
(Embodiment 18)
The basic configuration of the light emitting device 1 of the present embodiment is substantially the same as that of the seventeenth embodiment. As shown in FIG. 18, a large number of nanocrystal phosphors 31 are substantially uniformly formed in a sealing portion 19 filling the recess 16a. It is characterized in that it is dispersed and the sealing part 19 also serves as the wavelength conversion part 3. Since other configurations are the same as those of the seventeenth embodiment, the same components as those of the seventeenth embodiment are denoted by the same reference numerals, and description thereof is omitted.
[0080]
Thus, in the light emitting device 1 of the present embodiment, similarly to the seventeenth embodiment, the composition is changed as compared with the conventional case where a bulk phosphor having a particle diameter of several μm is used as the fluorescent material in the wavelength conversion unit 3. Since the luminous efficiency of the fluorescent substance can be increased and the temperature quenching can be reduced only by reducing the particle size to nano size without any problem, the luminous efficiency of the light emitting device 1 as a whole can be increased as compared with the related art, and the temperature can be increased. It is possible to suppress a decrease in luminance due to the increase.
[0081]
(Embodiment 19)
The basic configuration of the light emitting device 1 of the present embodiment is substantially the same as that of the seventeenth embodiment. As shown in FIG. 19, a lens portion 43 that is convex forward on the front surface (the upper surface in FIG. 19) of the sealing portion 19. Is provided. The lens portion 43 is provided over the sealing portion 19 and one surface of the insulating substrate 16, and is in close contact with the printed wiring 17 at a portion where the printed wiring 17 is formed on one surface of the insulating substrate 16. Here, the material of the lens unit 43 is not particularly limited as long as it is transparent to ultraviolet light and visible light and there is no practical problem in terms of heat resistance and weather resistance. May be adopted, or a material different from that of the sealing portion 19 may be adopted. The same components as those in the seventeenth embodiment are denoted by the same reference numerals, and the description is omitted.
[0082]
However, in the light emitting device 1 of the present embodiment, similarly to the seventeenth embodiment, the composition is changed as compared with the conventional case where a bulk phosphor having a particle diameter of several μm is used as the fluorescent material in the wavelength conversion unit 3. Since the luminous efficiency of the fluorescent substance can be increased and the temperature quenching can be reduced only by reducing the particle size to nano size without any problem, the luminous efficiency of the light emitting device 1 as a whole can be increased as compared with the related art, and the temperature can be increased. It is possible to suppress a decrease in luminance due to the increase. In addition, in the light emitting device 1 of the present embodiment, since the lens unit 43 is provided in front of the light emitting element 2 and the wavelength conversion unit 3, directivity control of light emission can be performed, and light distribution with excellent directivity can be achieved. There is an advantage that it can be obtained.
[0083]
(Embodiment 20)
The basic configuration of the light emitting device 1 of the present embodiment is substantially the same as that of the eighteenth embodiment. As shown in FIG. 20, a lens portion 43 that is convex forward on the front surface (the upper surface in FIG. 20) of the sealing portion 19. Is provided. The lens portion 43 is provided over the sealing portion 19 and one surface of the insulating substrate 16, and is in close contact with the printed wiring 17 at a portion where the printed wiring 17 is formed on one surface of the insulating substrate 16. Here, the material of the lens portion 43 is not particularly limited as long as it is transparent to ultraviolet light and visible light and there is no practical problem in terms of heat resistance and weather resistance. For example, an epoxy resin or a silicone resin may be used. It may be used. Note that the same components as those of the eighteenth embodiment are denoted by the same reference numerals, and description thereof is omitted.
[0084]
However, in the light emitting device 1 of the present embodiment, similarly to the eighteenth embodiment, the composition is changed as compared with the conventional case where a bulk phosphor having a particle diameter of several μm is used as the fluorescent material in the wavelength conversion unit 3. Since the luminous efficiency of the fluorescent substance can be increased and the temperature quenching can be reduced only by reducing the particle size to nano size without any problem, the luminous efficiency of the light emitting device 1 as a whole can be increased as compared with the related art, and the temperature can be increased. It is possible to suppress a decrease in luminance due to the increase. Moreover, in the light emitting device 1 of the present embodiment, the provision of the lens unit 43 has the advantage that the directivity of light emission can be controlled, and light distribution with excellent directivity can be obtained.
[0085]
(Embodiment 21)
The basic configuration of the light-emitting device 1 of the present embodiment is substantially the same as that of the seventeenth embodiment. As shown in FIG. 21, a lens whose front surface is convex forward on the front surface (the upper surface in FIG. 21) of the sealing portion 19. The difference is that the part 43 is provided. Also, in the present embodiment, instead of covering the periphery of the light emitting element 2 with the wavelength conversion unit 3, the lens unit 43 is provided in a large number in a medium (for example, epoxy resin or silicone resin) transparent to ultraviolet light and visible light. Is different in that the nanocrystal phosphor 31 is substantially uniformly dispersed. That is, the present embodiment is different in that the lens unit 43 also serves as the wavelength conversion unit 3. Here, the medium of the lens unit 43 is not particularly limited as long as it is transparent to ultraviolet light and visible light and there is no practical problem in terms of heat resistance and weather resistance. May be adopted, or a material different from that of the sealing portion 19 may be adopted. The same components as those in the seventeenth embodiment are denoted by the same reference numerals, and the description is omitted.
[0086]
However, in the light emitting device 1 of the present embodiment, similarly to the seventeenth embodiment, the composition is changed as compared with the conventional case where a bulk phosphor having a particle diameter of several μm is used as the fluorescent material in the wavelength conversion unit 3. Since the luminous efficiency of the fluorescent substance can be increased and the temperature quenching can be reduced only by reducing the particle size to nano size without any problem, the luminous efficiency of the light emitting device 1 as a whole can be increased as compared with the related art, and the temperature can be increased. It is possible to suppress a decrease in luminance due to the increase. In addition, in the light emitting device 1 of the present embodiment, the provision of the lens unit 43 in front of the light emitting element 2 enables the directivity control of light emission to be performed, and has an advantage that a light distribution with excellent directivity can be obtained. is there.
[0087]
(Embodiment 22)
The basic configuration of the light emitting device 1 of the present embodiment is substantially the same as that of the seventeenth embodiment, and as shown in FIG. 22, a lens whose front surface is convex forward on the front surface (the upper surface in FIG. 21) of the sealing portion 19. The difference is that the part 43 is provided. Further, in the present embodiment, the sealing portion 19 is formed by dispersing a large number of nanocrystal phosphors 31 substantially uniformly in a medium (for example, epoxy resin, silicone resin, or the like) transparent to ultraviolet light and visible light. The lens unit 43 also differs in that a large number of nanocrystal phosphors 31 are substantially uniformly dispersed in a medium (for example, epoxy resin, silicone resin, or the like) transparent to ultraviolet light and visible light. I do. That is, the present embodiment is different in that the sealing unit 19 and the lens unit 43 also serve as the wavelength conversion unit 3. Here, the medium of the lens unit 43 is not particularly limited as long as it is transparent to ultraviolet light and visible light and there is no practical problem in terms of heat resistance and weather resistance. May be adopted, or a material different from that of the sealing portion 19 may be adopted. The same components as those in the seventeenth embodiment are denoted by the same reference numerals, and the description is omitted.
[0088]
However, in the light emitting device 1 of the present embodiment, similarly to the seventeenth embodiment, the composition is changed as compared with the conventional case where a bulk phosphor having a particle diameter of several μm is used as the fluorescent material in the wavelength conversion unit 3. Since the luminous efficiency of the fluorescent substance can be increased and the temperature quenching can be reduced only by reducing the particle size to nano size without any problem, the luminous efficiency of the light emitting device 1 as a whole can be increased as compared with the related art, and the temperature can be increased. It is possible to suppress a decrease in luminance due to the increase. Moreover, in the light emitting device 1 of the present embodiment, the provision of the lens unit 43 has the advantage that the directivity of light emission can be controlled, and light distribution with excellent directivity can be obtained.
[0089]
(Embodiment 23)
The basic configuration of the light emitting device 1 of the present embodiment is substantially the same as that of the twenty-first embodiment, and as shown in FIG. The difference is that 43 is covered by the insulating substrate 16 so as to cover the opening surface of the recess 16 a of the insulating substrate 16. Here, it is desirable that the cavity 26 be in a vacuum state or filled with an inert gas. Note that the same components as those of the twenty-first embodiment are denoted by the same reference numerals, and description thereof is omitted.
[0090]
Thus, in the present embodiment, as in the twenty-first embodiment, the particle size of the wavelength conversion unit 3 is reduced without changing the composition as compared with a conventional case where a bulk phosphor having a particle diameter of several μm is used as the fluorescent material. Since the luminous efficiency of the fluorescent substance can be increased and the temperature quenching can be reduced only by reducing the diameter to the nano size, the luminous efficiency of the light emitting device 1 as a whole can be increased as compared with the related art, and the luminance accompanying the temperature rise can be increased. Can be suppressed. In addition, in the light emitting device 1 of the present embodiment, the provision of the lens unit 43 in front of the light emitting element 2 enables the directivity control of light emission to be performed, and has an advantage that a light distribution with excellent directivity can be obtained. is there.
[0091]
(Embodiment 24)
The basic configuration of the light emitting device 1 of the present embodiment is substantially the same as that of the seventeenth embodiment, and is characterized in that the light emitting element 2 is mounted on an insulating substrate 16 by a so-called flip chip as shown in FIG. That is, the light emitting element 2 has bumps 24, 24 made of a conductive material provided on the surface side of each of the p-type semiconductor layer (not shown) and the n-type semiconductor layer (not shown) of the light emitting portion. When it is down, it is connected to the printed wirings (conductive patterns) 17 on the insulating substrate 16 via the bumps 24. Therefore, in the light emitting element 2 of the present embodiment, the light emitting portion is disposed on the side closest to the insulating substrate 16, and the light emitted by the light emitting portion is extracted to the front side through the base substrate (for example, sapphire substrate) of the light emitting portion. Will be. Further, the periphery of the light emitting element 2 is covered by the wavelength conversion unit 3. The same components as those in the seventeenth embodiment are denoted by the same reference numerals, and the description is omitted.
[0092]
However, in the light emitting device 1 of the present embodiment, similarly to the seventeenth embodiment, the composition is changed as compared with the conventional case where a bulk phosphor having a particle diameter of several μm is used as the fluorescent material in the wavelength conversion unit 3. Since the luminous efficiency of the fluorescent substance can be increased and the temperature quenching can be reduced only by reducing the particle size to nano size without any problem, the luminous efficiency of the light emitting device 1 as a whole can be increased as compared with the related art, and the temperature can be increased. It is possible to suppress a decrease in luminance due to the increase. Moreover, in the light emitting device 1 of the present embodiment, the provision of the lens unit 43 enables the directivity control of light emission.
[0093]
Further, in the present embodiment, the conductive wires 15, 15 as in the seventeenth embodiment are not required for connecting the printed wirings 17, 17 provided on the insulating substrate 16 and the light emitting element 2, and therefore the seventeenth embodiment is not required. As a result, the mechanical strength and reliability can be improved.
[0094]
(Embodiment 25)
The basic configuration of the light emitting device 1 of the present embodiment is substantially the same as that of the eighteenth embodiment, and is characterized in that the light emitting element 2 is mounted on an insulating substrate 16 by a so-called flip chip as shown in FIG. That is, the light emitting element 2 has bumps 24, 24 made of a conductive material provided on the surface side of each of the p-type semiconductor layer (not shown) and the n-type semiconductor layer (not shown) of the light emitting portion. When it is down, it is electrically connected to the printed wirings 17, 17 of the insulating substrate 16 via the bumps 24, 24. Therefore, in the light emitting element 2 of the present embodiment, the light emitting portion is disposed on the side closest to the insulating substrate 16, and the light emitted by the light emitting portion is extracted to the front side through the base substrate (for example, sapphire substrate) of the light emitting portion. Will be. Further, the periphery of the light emitting element 2 is covered by the wavelength conversion unit 3. Note that the same components as those of the eighteenth embodiment are denoted by the same reference numerals, and description thereof is omitted.
[0095]
However, in the light emitting device 1 of the present embodiment, similarly to the eighteenth embodiment, the composition is changed as compared with the conventional case where a bulk phosphor having a particle diameter of several μm is used as the fluorescent material in the wavelength conversion unit 3. Since the luminous efficiency of the fluorescent substance can be increased and the temperature quenching can be reduced only by reducing the particle size to nano size without any problem, the luminous efficiency of the light emitting device 1 as a whole can be increased as compared with the related art, and the temperature can be increased. It is possible to suppress a decrease in luminance due to the increase.
[0096]
In the present embodiment, the conductive wires 15, 15 as in the eighteenth embodiment are not required to connect the printed wirings 17, 17 provided on the insulating substrate 16 and the light emitting element 2. As a result, the mechanical strength and reliability can be improved.
[0097]
(Embodiment 26)
The basic configuration of the light emitting device 1 of the present embodiment is substantially the same as that of the nineteenth embodiment, and is characterized in that the light emitting element 2 is mounted on an insulating substrate 16 by a so-called flip chip as shown in FIG. That is, the light emitting element 2 has bumps 24, 24 made of a conductive material provided on the surface side of each of the p-type semiconductor layer (not shown) and the n-type semiconductor layer (not shown) of the light emitting portion. When it is down, it is electrically connected to the printed wirings 17, 17 of the insulating substrate 16 via the bumps 24, 24. Therefore, in the light emitting element 2 of the present embodiment, the light emitting portion is disposed on the side closest to the insulating substrate 16, and the light emitted by the light emitting portion is extracted to the front side through the base substrate (for example, sapphire substrate) of the light emitting portion. Will be. Further, the periphery of the light emitting element 2 is covered by the wavelength conversion unit 3. Note that the same components as those in the nineteenth embodiment are denoted by the same reference numerals, and description thereof is omitted.
[0098]
Thus, in the light emitting device 1 of the present embodiment, similarly to the nineteenth embodiment, the composition is changed as compared with the conventional case where a bulk phosphor having a particle diameter of several μm is used as the fluorescent material in the wavelength conversion unit 3. Since the luminous efficiency of the fluorescent substance can be increased and the temperature quenching can be reduced only by reducing the particle size to nano size without any problem, the luminous efficiency of the light emitting device 1 as a whole can be increased as compared with the related art, and the temperature can be increased. The decrease in luminance due to the increase can be suppressed, and the directivity control of light emission can be performed by providing the lens unit 43 in front of the light emitting element 2 and the wavelength conversion unit 3.
[0099]
Further, in the present embodiment, since the conductive wires 15, 15 as in the nineteenth embodiment are not required for connecting the printed wirings 17, 17 provided on the insulating substrate 16 and the light emitting element 2, the nineteenth embodiment is not required. As a result, the mechanical strength and reliability can be improved.
[0100]
(Embodiment 27)
The basic configuration of the light emitting device 1 of the present embodiment is substantially the same as that of the twentieth embodiment, and is characterized in that the light emitting element 2 is mounted on an insulating substrate 16 by a so-called flip chip as shown in FIG. That is, the light emitting element 2 has bumps 24, 24 made of a conductive material provided on the surface side of each of the p-type semiconductor layer (not shown) and the n-type semiconductor layer (not shown) of the light emitting portion. When it is down, it is electrically connected to the printed wirings 17, 17 of the insulating substrate 16 via the bumps 24, 24. Therefore, in the light emitting element 2 of the present embodiment, the light emitting portion is disposed on the side closest to the insulating substrate 16, and the light emitted by the light emitting portion is extracted to the front side through the base substrate (for example, sapphire substrate) of the light emitting portion. Will be. Note that the same components as those of the twentieth embodiment are denoted by the same reference numerals, and description thereof will be omitted.
[0101]
However, in the light emitting device 1 of the present embodiment, similarly to the twentieth embodiment, the composition is changed as compared with the conventional case where a bulk phosphor having a particle diameter of several μm is used as the fluorescent material in the wavelength conversion unit 3. Since the luminous efficiency of the fluorescent substance can be increased and the temperature quenching can be reduced only by reducing the particle size to nano size without any problem, the luminous efficiency of the light emitting device 1 as a whole can be increased as compared with the related art, and the temperature can be increased. The decrease in luminance due to the increase can be suppressed, and the directivity control of light emission can be performed by providing the lens unit 43 in front of the light emitting element 2 and the wavelength conversion unit 3.
[0102]
Further, in the present embodiment, the conductive wires 15, 15 as in the twentieth embodiment are not required to connect the printed wirings 17, 17 provided on the insulating substrate 16 and the light emitting element 2. As a result, the mechanical strength and reliability can be improved.
[0103]
(Embodiment 28)
The basic configuration of the light emitting device 1 of the present embodiment is substantially the same as that of the twenty first embodiment, and is characterized in that the light emitting element 2 is mounted on an insulating substrate 16 by a so-called flip chip as shown in FIG. That is, the light emitting element 2 has bumps 24, 24 made of a conductive material provided on the surface side of each of the p-type semiconductor layer (not shown) and the n-type semiconductor layer (not shown) of the light emitting portion. When it is down, it is electrically connected to the printed wirings 17, 17 of the insulating substrate 16 via the bumps 24, 24. Therefore, in the light emitting element 2 of the present embodiment, the light emitting portion is disposed on the side closest to the insulating substrate 16, and the light emitted by the light emitting portion is extracted to the front side through the base substrate (for example, sapphire substrate) of the light emitting portion. Will be. Note that the same components as those of the twenty-first embodiment are denoted by the same reference numerals, and description thereof is omitted.
[0104]
Thus, in the light emitting device 1 of the present embodiment, similarly to the twenty-first embodiment, the composition is changed as compared with a conventional case where a bulk phosphor having a particle diameter of several μm is used as the fluorescent material in the wavelength conversion unit 3. Since the luminous efficiency of the fluorescent substance can be increased and the temperature quenching can be reduced only by reducing the particle size to nano size without any problem, the luminous efficiency of the light emitting device 1 as a whole can be increased as compared with the related art, and the temperature can be increased. The decrease in luminance due to the increase can be suppressed, and the provision of the lens unit 43 can control the directivity of light emission.
[0105]
Further, in the present embodiment, the conductive wires 15, 15 as in the embodiment 21 are not required for connecting the printed wirings 17, 17 provided on the insulating substrate 16 and the light emitting element 2, so that the embodiment 21 is not required. As a result, the mechanical strength and reliability can be improved.
[0106]
(Embodiment 29)
The basic configuration of the light emitting device 1 of the present embodiment is substantially the same as that of Embodiment 22, and is characterized in that the light emitting element 2 is so-called flip-chip mounted on the insulating substrate 16 as shown in FIG. That is, the light emitting element 2 has bumps 24, 24 made of a conductive material provided on the surface side of each of the p-type semiconductor layer (not shown) and the n-type semiconductor layer (not shown) of the light emitting portion. When it is down, it is electrically connected to the printed wirings 17, 17 of the insulating substrate 16 via the bumps 24, 24. Therefore, in the light emitting element 2 of the present embodiment, the light emitting portion is disposed on the side closest to the insulating substrate 16, and the light emitted by the light emitting portion is extracted to the front side through the base substrate (for example, sapphire substrate) of the light emitting portion. Will be. Note that the same components as those of the twenty-second embodiment are denoted by the same reference numerals, and description thereof will be omitted.
[0107]
Thus, in the light emitting device 1 of the present embodiment, similarly to the twenty-second embodiment, the composition is changed as compared with the conventional case where a bulk phosphor having a particle diameter of several μm is used as the fluorescent material in the wavelength conversion unit 3. Since the luminous efficiency of the fluorescent substance can be increased and the temperature quenching can be reduced only by reducing the particle size to nano size without any problem, the luminous efficiency of the light emitting device 1 as a whole can be increased as compared with the related art, and the temperature can be increased. The decrease in luminance due to the increase can be suppressed, and the provision of the lens unit 43 can control the directivity of light emission.
[0108]
Further, in the present embodiment, the conductive wires 15, 15 as in the twenty-second embodiment are not required to connect the printed wirings 17, 17 provided on the insulating substrate 16 and the light emitting element 2. As a result, the mechanical strength and reliability can be improved.
[0109]
(Embodiment 30)
The basic configuration of the light emitting device 1 of the present embodiment is substantially the same as that of Embodiment 23, and is characterized in that the light emitting element 2 is mounted on an insulating substrate 16 by a so-called flip chip as shown in FIG. That is, the light emitting element 2 has bumps 24, 24 made of a conductive material provided on the surface side of each of the p-type semiconductor layer (not shown) and the n-type semiconductor layer (not shown) of the light emitting portion. When it is down, it is electrically connected to the printed wirings 17, 17 of the insulating substrate 16 via the bumps 24, 24. Therefore, in the light emitting element 2 of the present embodiment, the light emitting portion is disposed on the side closest to the insulating substrate 16, and the light emitted by the light emitting portion is extracted to the front side through the base substrate (for example, sapphire substrate) of the light emitting portion. Will be. Note that the same components as those of the twenty-third embodiment are denoted by the same reference numerals, and description thereof will be omitted.
[0110]
However, in the light emitting device 1 of the present embodiment, similarly to the embodiment 23, the composition is changed as compared with the conventional case where a bulk phosphor having a particle diameter of several μm is used as the fluorescent material in the wavelength conversion unit 3. Since the luminous efficiency of the fluorescent substance can be increased and the temperature quenching can be reduced only by reducing the particle size to nano size without any problem, the luminous efficiency of the light emitting device 1 as a whole can be increased as compared with the related art, and the temperature can be increased. The decrease in luminance due to the increase can be suppressed, and the provision of the lens unit 43 can control the directivity of light emission.
[0111]
Further, in the present embodiment, the conductive wires 15, 15 as in the embodiment 23 are not required for connecting the printed wirings 17, 17 provided on the insulating substrate 16 and the light emitting element 2, so that the embodiment 23 As a result, the mechanical strength and reliability can be improved.
[0112]
By the way, the light emitting device 1 of each of the above embodiments has only one light emitting element 2, but a plurality of light emitting elements 2 constitute one unit of a module, and at least a part of the module is a nanocrystal as a fluorescent substance. Needless to say, the wavelength converter 3 including the phosphor 31 may be provided. For example, in the case of the light emitting device 1 including the bullet-shaped mold portion 11 as described in the first to fourth embodiments, a plurality of light emitting devices 1 are mounted on the same printed circuit board to constitute one unit of module. It may be. Further, for example, in the surface-mounted light emitting device 1 as described in Embodiments 5 to 23, a plurality of light emitting elements 2 are arranged on the same insulating substrate 16 to constitute one unit module. Alternatively, in the flip-chip mounting type light emitting device 1 as described in the embodiments 24 to 30, a plurality of light emitting elements 2 may be arranged on the same insulating substrate 16 to constitute one unit module. May be.
[0113]
【The invention's effect】
The invention according to claim 1 includes a light-emitting element, and a wavelength conversion section having a large number of fluorescent substances that emit light of a desired wavelength when excited by light emission of the light-emitting element, and the light-emitting substance in the wavelength conversion section has an average particle diameter. Is composed of a nanocrystal phosphor having a thickness of 0.1 nm to 100 nm, and can obtain synthetic light of light emitted from the light emitting element and light emitted from the nanocrystal phosphor. The quantum size effect is exhibited by using the crystal phosphor, and the particle size can be reduced without changing the composition as compared with the case where a bulk phosphor having a particle size of several μm is used as a conventional luminescent material. It is possible to increase the luminous efficiency of the fluorescent material and to reduce the temperature quenching just by increasing the size. There is an effect that it is possible to suppress a decrease in luminance due to the temperature rise.
[0114]
According to a second aspect of the present invention, in the first aspect of the present invention, the fluorescent substance is made of a nanocrystal fluorescent substance having an average particle diameter of 1 nm to 10 nm. And the effect of further reducing temperature quenching can be achieved.
[0115]
According to a third aspect of the present invention, in the first or second aspect of the present invention, the wavelength conversion unit has a modified film that covers a surface of each of the nanocrystal phosphors and is made of a material that transmits ultraviolet light and visible light. Therefore, the electrons and holes in the nanocrystal phosphor can be confined, the development of the quantum size effect can be promoted, and the site based on the surface defect of the nanocrystal phosphor can be capped. As a result, the energy loss is reduced, and the luminous efficiency of the nanocrystal phosphor can be increased.
[0116]
According to a fourth aspect of the present invention, in the third aspect of the present invention, the wavelength conversion section is composed of a large number of fine particles composed of the nanocrystal phosphor and the modification film, so that the nanocrystal phosphor is dispersed. In this case, the quantum size effect can be exhibited without any effect, and the wavelength conversion portion can be easily formed.
[0117]
According to a fifth aspect of the present invention, in the first to third aspects of the present invention, the nanocrystal phosphor is dispersed in a medium that transmits ultraviolet light and visible light. There is an effect that the luminous efficiency can be improved and the temperature quenching can be more easily reduced by the quantum size effect in the phosphor.
[0118]
According to a sixth aspect of the present invention, in the invention of the fifth aspect, since the medium is a solid, the dispersion state of the nanocrystal phosphor can be fixed, the light emitting device can be easily handled, and reliability in terms of mechanical strength can be improved. There is an effect that the property can be improved.
[0119]
According to a seventh aspect of the present invention, in the sixth aspect of the invention, since the solid is a resin, there is an effect that molding of the solid serving as the medium is facilitated and the weight can be reduced.
[0120]
In the invention according to claim 8, in the invention according to claim 6, since the solid is glass solidified by a sol-gel method, by using glass having better weather resistance than resin, coloring due to discoloration of the medium is prevented. Therefore, there is an effect that the life can be extended.
[0121]
According to a ninth aspect of the present invention, in the first to eighth aspects of the present invention, the wavelength range including the emission peak wavelength of each of the nanocrystal phosphors includes three wavelength ranges of 380 nm to 500 nm, 500 nm to 600 nm, and 600 nm to 800 nm. Since the light is selected from the wavelength range, it is possible to obtain blue light, green light, red light, or a combined light thereof, and it is also possible to obtain white light.
[0122]
According to a tenth aspect of the present invention, in the first to ninth aspects of the present invention, since the nanocrystal phosphor is a doped semiconductor fine particle in which luminescent ions are added to a base crystal, light emitted from the light emitting element is provided. By appropriately selecting the host crystal and the luminescent ions according to the excitation wavelength, which is the wavelength of the above, there is an effect that light of a desired wavelength can be emitted.
[0123]
According to an eleventh aspect of the present invention, in the first to ninth aspects of the present invention, since the nanocrystal phosphor is an undoped semiconductor fine particle composed of only a host crystal, the nanocrystal phosphor has an energy larger than the band gap of the host crystal. Irradiation of light having a wavelength has an effect that light having a wavelength corresponding to a band gap can be emitted.
[0124]
According to a twelfth aspect of the present invention, in the first to eleventh aspects, the emission peak wavelength of the light emitting element is 200 nm to 500 nm. There is an effect that it becomes possible to convert to.
[Brief description of the drawings]
FIGS. 1A and 1B show a first embodiment, in which FIG. 1A is a schematic sectional view, and FIG. 1B is an enlarged view of a main part of FIG.
FIG. 2 is a schematic sectional view showing a second embodiment.
FIG. 3 is a schematic sectional view showing a third embodiment.
FIG. 4 is a schematic sectional view showing a fourth embodiment.
FIG. 5 is a schematic sectional view showing a fifth embodiment.
FIG. 6 is a schematic sectional view showing a sixth embodiment.
FIG. 7 is a schematic sectional view showing a seventh embodiment.
FIG. 8 is a schematic sectional view showing an eighth embodiment.
FIG. 9 is a schematic sectional view showing a ninth embodiment.
FIG. 10 is a schematic sectional view showing a tenth embodiment.
FIG. 11 is a schematic sectional view showing an eleventh embodiment.
FIG. 12 is a schematic sectional view showing Embodiment 12;
FIG. 13 is a schematic sectional view showing a thirteenth embodiment.
FIG. 14 is a schematic sectional view showing a fourteenth embodiment.
FIG. 15 is a schematic sectional view showing a fifteenth embodiment.
FIG. 16 is a schematic sectional view showing Embodiment 16;
FIG. 17 is a schematic sectional view showing Embodiment 17;
FIG. 18 is a schematic sectional view showing Embodiment 18;
FIG. 19 is a schematic sectional view showing Embodiment 19;
FIG. 20 is a schematic sectional view showing Embodiment 20;
FIG. 21 is a schematic sectional view showing Embodiment 21;
FIG. 22 is a schematic sectional view showing Embodiment 22;
FIG. 23 is a schematic sectional view showing Embodiment 23;
FIG. 24 is a schematic sectional view showing Embodiment 24;
FIG. 25 is a schematic sectional view showing Embodiment 25;
FIG. 26 is a schematic sectional view showing Embodiment 26;
FIG. 27 is a schematic sectional view showing Embodiment 27;
FIG. 28 is a schematic sectional view showing Embodiment 28;
FIG. 29 is a schematic sectional view showing Embodiment 29;
FIG. 30 is a schematic sectional view showing Embodiment 30;
FIG. 31 is an explanatory diagram of a basic concept of each embodiment.
FIG. 32 is a schematic configuration diagram showing an example of a main part of the above.
FIG. 33 is a schematic configuration diagram showing another example of the main part of the above.
[Explanation of symbols]
1 Light emitting device
2 Light-emitting element
3 wavelength converter
11 Mold part

Claims (12)

発光素子と、発光素子の発光によって励起されて所望の波長の光を放射する多数の蛍光物質を有する波長変換部とを備え、波長変換部における発光物質は平均粒子径が０．１ｎｍ〜１００ｎｍのナノクリスタル蛍光体からなることを特徴とする発光装置。A light-emitting element, including a wavelength conversion portion having a large number of fluorescent substances that emit light of a desired wavelength when excited by light emission of the light-emitting element, wherein the light-emitting substance in the wavelength conversion section has an average particle diameter of 0.1 nm to 100 nm. A light-emitting device comprising a nanocrystal phosphor. 前記蛍光物質は、平均粒子径が１ｎｍ〜１０ｎｍのナノクリスタル蛍光体からなることを特徴とする請求項１記載の発光装置。The light emitting device according to claim 1, wherein the fluorescent substance is a nanocrystal fluorescent substance having an average particle diameter of 1 nm to 10 nm. 前記波長変換部は、前記各ナノクリスタル蛍光体それぞれの表面を覆い紫外線および可視光を透光する材料からなる修飾膜を有することを特徴とする請求項１または請求項２記載の発光装置。The light emitting device according to claim 1, wherein the wavelength conversion unit has a modification film that covers a surface of each of the nanocrystal phosphors and is made of a material that transmits ultraviolet light and visible light. 前記波長変換部は、前記ナノクリスタル蛍光体と前記修飾膜とで構成される多数の微粒子からなることを特徴とする請求項３記載の発光装置。The light emitting device according to claim 3, wherein the wavelength converter includes a large number of fine particles composed of the nanocrystal phosphor and the modification film. 前記波長変換部は、紫外線および可視光を透光する媒質中に前記ナノクリスタル蛍光体が分散されてなることを特徴とする請求項１ないし請求項３のいずれかに記載の発光装置。The light emitting device according to claim 1, wherein the wavelength converter includes the nanocrystal phosphor dispersed in a medium that transmits ultraviolet light and visible light. 前記媒質が固体であることを特徴とする請求項５記載の発光装置。The light emitting device according to claim 5, wherein the medium is a solid. 前記固体が樹脂であることを特徴とする請求項６記載の発光装置。The light emitting device according to claim 6, wherein the solid is a resin. 前記固体がゾルゲル法によって固化されたガラスであることを特徴とする請求項６記載の発光装置。The light emitting device according to claim 6, wherein the solid is glass solidified by a sol-gel method. 前記各ナノクリスタル蛍光体それぞれの発光ピーク波長の含まれる波長域が、３８０ｎｍ〜５００ｎｍ、５００ｎｍ〜６００ｎｍ、６００ｎｍ〜８００ｎｍの３つの波長域から選択されることを特徴とする請求項１ないし請求項８のいずれかに記載の発光装置。9. The wavelength range including the emission peak wavelength of each of the nanocrystal phosphors is selected from three wavelength ranges of 380 nm to 500 nm, 500 nm to 600 nm, and 600 nm to 800 nm. The light emitting device according to any one of the above. 前記ナノクリスタル蛍光体は、母体結晶中に発光イオンを添加したドープ型半導体微粒子であることを特徴とする請求項１ないし請求項９のいずれかに記載の発光装置。The light emitting device according to any one of claims 1 to 9, wherein the nanocrystal phosphor is a doped semiconductor fine particle obtained by adding luminescent ions to a host crystal. 前記ナノクリスタル蛍光体は、母体結晶のみからなる非ドープ型半導体微粒子であることを特徴とする請求項１ないし請求項９のいずれかに記載の発光装置。The light emitting device according to any one of claims 1 to 9, wherein the nanocrystal phosphor is an undoped semiconductor fine particle composed of only a host crystal. 前記発光素子の発光ピーク波長が２００ｎｍ〜５００ｎｍであることを特徴とする請求項１ないし請求項１１のいずれかに記載の発光装置。The light emitting device according to claim 1, wherein a light emission peak wavelength of the light emitting element is 200 nm to 500 nm.
JP2002230512A 2002-08-07 2002-08-07 Light emitting device Withdrawn JP2004071908A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002230512A JP2004071908A (en) 2002-08-07 2002-08-07 Light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002230512A JP2004071908A (en) 2002-08-07 2002-08-07 Light emitting device

Publications (1)

Publication Number Publication Date
JP2004071908A true JP2004071908A (en) 2004-03-04

Family

ID=32016568

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002230512A Withdrawn JP2004071908A (en) 2002-08-07 2002-08-07 Light emitting device

Country Status (1)

Country Link
JP (1) JP2004071908A (en)

Cited By (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006054313A (en) * 2004-08-11 2006-02-23 Rohm Co Ltd Semiconductor light-emitting device
WO2006067885A1 (en) * 2004-12-24 2006-06-29 Kyocera Corporation Light-emitting device and illuminating device
JP2006199963A (en) * 2005-01-20 2006-08-03 Samsung Electronics Co Ltd Quantum dot phosphor and method for producing the same
KR20060088228A (en) * 2005-02-01 2006-08-04 어드밴스드 옵토일렉트로닉 테크놀로지 인코포레이티드 Light apparatus capable of emitting light of multiple wavelengths using nanometer fluorescent material, light device and manufacturing method thereof
JP2006269778A (en) * 2005-03-24 2006-10-05 Nichia Chem Ind Ltd Optical device
US7126265B2 (en) * 2003-05-28 2006-10-24 Patent-Treuhand-Gesellschaft Fuer Elektrische Gluehlampen Mbh Conversion LED having a phosphor component based on an agglomeration of phosphor particles and pores
JP2006322001A (en) * 2005-05-16 2006-11-30 Samsung Electro Mech Co Ltd Coated nanoparticle and electronic element utilizing the same
WO2007007954A1 (en) * 2005-07-11 2007-01-18 Seoul Opto Device Co., Ltd. Light emitting device employing nanowire phosphors
WO2007018039A1 (en) 2005-08-05 2007-02-15 Matsushita Electric Industrial Co., Ltd. Semiconductor light-emitting device
JP2007101932A (en) * 2005-10-05 2007-04-19 Matsushita Electric Ind Co Ltd Display device
JP2007103511A (en) * 2005-09-30 2007-04-19 Kyocera Corp Light emitting device
JP2007103513A (en) * 2005-09-30 2007-04-19 Kyocera Corp Light emitting device
KR100713790B1 (en) 2004-03-26 2007-05-04 가부시키가이샤 고이토 세이사꾸쇼 Light source module and headlamp for vehicle
EP1801893A2 (en) * 2005-12-26 2007-06-27 Kabushiki Kaisha Toshiba Lens-equipped light-emitting diode device and method of manufacturing the same
JP2007201104A (en) * 2006-01-25 2007-08-09 Shinko Electric Ind Co Ltd Light emitting device
JP2007527440A (en) * 2003-06-23 2007-09-27 サン−ゴバン グラス フランス High mechanical and optical performance illumination system
JP2007281484A (en) * 2006-04-10 2007-10-25 Samsung Electro Mech Co Ltd White light emitting diode, and its manufacturing method
JP2007533140A (en) * 2004-04-06 2007-11-15 クリー　インコーポレイテッド Light emitting device having a plurality of encapsulated layers in which at least one encapsulated layer includes a group of nanoparticles and method for forming the same
JP2008021578A (en) * 2006-07-14 2008-01-31 Koito Mfg Co Ltd Marker lamp for vehicle
JP2008021988A (en) * 2006-07-14 2008-01-31 Samsung Electronics Co Ltd White light-emitting diode using semiconductor nanocrystals and method of fabricating the same
KR100862455B1 (en) 2004-11-25 2008-10-08 삼성전기주식회사 Light emitting diode using nanocrystal
JP2008546877A (en) * 2005-06-23 2008-12-25 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング Conversion material for wavelength conversion, light emitting optical element and method for manufacturing the same
US7518160B2 (en) 2005-10-31 2009-04-14 Kyocera Corporation Wavelength converter, lighting system, and lighting system assembly
JP2009298904A (en) * 2008-06-12 2009-12-24 Fujikura Ltd Manufacturing method for oxide amorphous particulate, amorphous particulate, precursor of alpha sialon phosphor, alpha sialon phosphor particulate and manufacturing method therefor, light-emitting device, and illuminating appliance
US7795625B2 (en) 2006-01-16 2010-09-14 Panasonic Corporation Semiconductor light-emitting device
JP2011066460A (en) * 2010-12-29 2011-03-31 Panasonic Electric Works Co Ltd Light-emitting device
JP2011077551A (en) * 2010-12-29 2011-04-14 Panasonic Electric Works Co Ltd Light emitting device
JP2011233923A (en) * 2005-02-23 2011-11-17 Mitsubishi Chemicals Corp Member for semiconductor light emitting device and method of manufacturing the same, and semiconductor light emitting device using the same
WO2012132232A1 (en) * 2011-03-31 2012-10-04 パナソニック株式会社 Semiconductor light-emitting device
US8759840B2 (en) 2005-02-23 2014-06-24 Mitsubishi Chemical Corporation Semiconductor light emitting device member, method for manufacturing such semiconductor light emitting device member and semiconductor light emitting device using such semiconductor light emitting device member
CN105609617A (en) * 2014-11-19 2016-05-25 Lg伊诺特有限公司 Light emitting device package and lighting apparatus including the same
JP2018157085A (en) * 2017-03-17 2018-10-04 大日本印刷株式会社 Light wavelength conversion composition, light wavelength conversion member, light-emitting device, backlight device, and image display device

Cited By (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7126265B2 (en) * 2003-05-28 2006-10-24 Patent-Treuhand-Gesellschaft Fuer Elektrische Gluehlampen Mbh Conversion LED having a phosphor component based on an agglomeration of phosphor particles and pores
JP2007527440A (en) * 2003-06-23 2007-09-27 サン−ゴバン グラス フランス High mechanical and optical performance illumination system
KR100713790B1 (en) 2004-03-26 2007-05-04 가부시키가이샤 고이토 세이사꾸쇼 Light source module and headlamp for vehicle
KR101225252B1 (en) 2004-04-06 2013-01-22 크리 인코포레이티드 Light-emitting devices having multiple encapsulation layers with at least one of the encapsulation layers including nanoparticles and methods of forming the same
JP2007533140A (en) * 2004-04-06 2007-11-15 クリー　インコーポレイテッド Light emitting device having a plurality of encapsulated layers in which at least one encapsulated layer includes a group of nanoparticles and method for forming the same
US8946755B2 (en) 2004-04-06 2015-02-03 Cree, Inc. Light-emitting devices having multiple encapsulation layers with at least one of the encapsulation layers including nanoparticles and methods of forming the same
JP2006054313A (en) * 2004-08-11 2006-02-23 Rohm Co Ltd Semiconductor light-emitting device
KR100862455B1 (en) 2004-11-25 2008-10-08 삼성전기주식회사 Light emitting diode using nanocrystal
WO2006067885A1 (en) * 2004-12-24 2006-06-29 Kyocera Corporation Light-emitting device and illuminating device
US8106584B2 (en) 2004-12-24 2012-01-31 Kyocera Corporation Light emitting device and illumination apparatus
US8658439B2 (en) 2005-01-20 2014-02-25 Samsung Electronics Co., Ltd. Quantum dot phosphor for light emitting diode and method of preparing the same
JP2006199963A (en) * 2005-01-20 2006-08-03 Samsung Electronics Co Ltd Quantum dot phosphor and method for producing the same
US9090817B2 (en) 2005-01-20 2015-07-28 Samsung Electronics Co., Ltd. Quantum dot phosphor for light emitting diode and method of preparing the same
US9475984B2 (en) 2005-01-20 2016-10-25 Samsung Electronics Co., Ltd. Quantum dot phosphor for light emitting diode and method of preparing the same
US8664637B2 (en) 2005-01-20 2014-03-04 Samsung Electronics Co., Ltd. Quantum dot phosphor for light emitting diode and method of preparing the same
US9902902B2 (en) 2005-01-20 2018-02-27 Samsung Electronics Co., Ltd. Quantum dot phosphor for light emitting diode and method of preparing the same
KR20060088228A (en) * 2005-02-01 2006-08-04 어드밴스드 옵토일렉트로닉 테크놀로지 인코포레이티드 Light apparatus capable of emitting light of multiple wavelengths using nanometer fluorescent material, light device and manufacturing method thereof
JP2011233923A (en) * 2005-02-23 2011-11-17 Mitsubishi Chemicals Corp Member for semiconductor light emitting device and method of manufacturing the same, and semiconductor light emitting device using the same
US8759840B2 (en) 2005-02-23 2014-06-24 Mitsubishi Chemical Corporation Semiconductor light emitting device member, method for manufacturing such semiconductor light emitting device member and semiconductor light emitting device using such semiconductor light emitting device member
JP2006269778A (en) * 2005-03-24 2006-10-05 Nichia Chem Ind Ltd Optical device
JP2006322001A (en) * 2005-05-16 2006-11-30 Samsung Electro Mech Co Ltd Coated nanoparticle and electronic element utilizing the same
JP2008546877A (en) * 2005-06-23 2008-12-25 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング Conversion material for wavelength conversion, light emitting optical element and method for manufacturing the same
US8723198B2 (en) 2005-06-23 2014-05-13 Osram Opto Semiconductors Gmbh Wavelength-converting converter material, light-emitting optical component, and method for the production thereof
US8232562B2 (en) 2005-07-11 2012-07-31 Seoul Opto Device Co., Ltd. Light emitting device employing nanowire phosphors
US7821022B2 (en) 2005-07-11 2010-10-26 Seoul Opto Device Co., Ltd. Lighting emitting device employing nanowire phosphors
WO2007007954A1 (en) * 2005-07-11 2007-01-18 Seoul Opto Device Co., Ltd. Light emitting device employing nanowire phosphors
KR101106134B1 (en) 2005-07-11 2012-01-20 서울옵토디바이스주식회사 Light emitting device employing nanowire phosphors
WO2007018039A1 (en) 2005-08-05 2007-02-15 Matsushita Electric Industrial Co., Ltd. Semiconductor light-emitting device
US7910940B2 (en) 2005-08-05 2011-03-22 Panasonic Corporation Semiconductor light-emitting device
JP2007103513A (en) * 2005-09-30 2007-04-19 Kyocera Corp Light emitting device
JP2007103511A (en) * 2005-09-30 2007-04-19 Kyocera Corp Light emitting device
JP2007101932A (en) * 2005-10-05 2007-04-19 Matsushita Electric Ind Co Ltd Display device
US7518160B2 (en) 2005-10-31 2009-04-14 Kyocera Corporation Wavelength converter, lighting system, and lighting system assembly
EP1801893A2 (en) * 2005-12-26 2007-06-27 Kabushiki Kaisha Toshiba Lens-equipped light-emitting diode device and method of manufacturing the same
EP1801893A3 (en) * 2005-12-26 2011-08-03 Kabushiki Kaisha Toshiba Lens-equipped light-emitting diode device and method of manufacturing the same
US7795625B2 (en) 2006-01-16 2010-09-14 Panasonic Corporation Semiconductor light-emitting device
JP2007201104A (en) * 2006-01-25 2007-08-09 Shinko Electric Ind Co Ltd Light emitting device
JP2007281484A (en) * 2006-04-10 2007-10-25 Samsung Electro Mech Co Ltd White light emitting diode, and its manufacturing method
JP2008021988A (en) * 2006-07-14 2008-01-31 Samsung Electronics Co Ltd White light-emitting diode using semiconductor nanocrystals and method of fabricating the same
JP2008021578A (en) * 2006-07-14 2008-01-31 Koito Mfg Co Ltd Marker lamp for vehicle
JP2009298904A (en) * 2008-06-12 2009-12-24 Fujikura Ltd Manufacturing method for oxide amorphous particulate, amorphous particulate, precursor of alpha sialon phosphor, alpha sialon phosphor particulate and manufacturing method therefor, light-emitting device, and illuminating appliance
JP2011066460A (en) * 2010-12-29 2011-03-31 Panasonic Electric Works Co Ltd Light-emitting device
JP2011077551A (en) * 2010-12-29 2011-04-14 Panasonic Electric Works Co Ltd Light emitting device
JPWO2012132232A1 (en) * 2011-03-31 2014-07-24 パナソニック株式会社 Semiconductor light emitting device
WO2012132232A1 (en) * 2011-03-31 2012-10-04 パナソニック株式会社 Semiconductor light-emitting device
CN105609617A (en) * 2014-11-19 2016-05-25 Lg伊诺特有限公司 Light emitting device package and lighting apparatus including the same
EP3024038A1 (en) * 2014-11-19 2016-05-25 LG Innotek Co., Ltd. Light emitting device package and lighting apparatus including the same
US9647184B2 (en) 2014-11-19 2017-05-09 Lg Innotek Co., Ltd. Light emitting device package and lighting apparatus including the same
CN105609617B (en) * 2014-11-19 2019-08-13 Lg伊诺特有限公司 Light emitting device package and lighting apparatus including light emitting device package
JP2018157085A (en) * 2017-03-17 2018-10-04 大日本印刷株式会社 Light wavelength conversion composition, light wavelength conversion member, light-emitting device, backlight device, and image display device
JP7005916B2 (en) 2017-03-17 2022-01-24 大日本印刷株式会社 Light wavelength conversion composition, light wavelength conversion member, light emitting device, backlight device, and image display device

Similar Documents

Publication Publication Date Title
JP2004071908A (en) Light emitting device
US10801676B2 (en) Light emitting device
JP4645071B2 (en) Package molded body and semiconductor device using the same
JP4077170B2 (en) Semiconductor light emitting device
US7138660B2 (en) Light emitting device
JP3809760B2 (en) Light emitting diode
KR100645403B1 (en) White light emitting device
JP4430264B2 (en) Surface mount light emitting device
JP2003046141A (en) Light emitting device and method of manufacturing the same
JP2008227523A (en) Nitride phosphor and method for manufacturing the same, and light emitting device using nitride phosphor
JP2006524425A (en) White semiconductor light emitting device
JP2005228996A (en) Light-emitting device
JP2003179259A (en) Light emitting device and display device
JP2005008844A (en) Phosphor, and light emitter using the same
JP2002252372A (en) Light-emitting diode
JP2002359403A (en) Light-emitting device
JP2003249689A (en) Light emitting device
JP2006306981A (en) Nitride phosphor and light emitting device using the same
JP4874510B2 (en) Light emitting device and manufacturing method thereof
JP4591106B2 (en) White light emitting device
JP4899431B2 (en) Nitride-based phosphor and light-emitting device using the same
JP2002050800A (en) Light-emitting device and forming method therefor
JP4613546B2 (en) Light emitting device
JP4796548B2 (en) Luminescent display device
JP2003197976A (en) Light emitting diode

Legal Events

Date Code Title Description
A300 Withdrawal of application because of no request for examination

Free format text: JAPANESE INTERMEDIATE CODE: A300

Effective date: 20051101