CN110957307A - LED filament and LED filament bulb - Google Patents

LED filament and LED filament bulb Download PDF

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Publication number
CN110957307A
CN110957307A CN201811127617.4A CN201811127617A CN110957307A CN 110957307 A CN110957307 A CN 110957307A CN 201811127617 A CN201811127617 A CN 201811127617A CN 110957307 A CN110957307 A CN 110957307A
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China
Prior art keywords
light
glass
heat
powder
substrate
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CN201811127617.4A
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Chinese (zh)
Inventor
张国兴
赖中平
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BGT Materials Ltd
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BGT Materials Ltd
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Priority to CN201811127617.4A priority Critical patent/CN110957307A/en
Priority to JP2019058506A priority patent/JP2020053670A/en
Priority to JP2019001074U priority patent/JP3221601U/en
Priority to TW108112831A priority patent/TW202013775A/en
Priority to TW108204484U priority patent/TWM594672U/en
Priority to PCT/CN2019/098580 priority patent/WO2020063103A1/en
Publication of CN110957307A publication Critical patent/CN110957307A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/20—Light sources comprising attachment means
    • F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
    • F21K9/232—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings specially adapted for generating an essentially omnidirectional light distribution, e.g. with a glass bulb
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/20—Light sources comprising attachment means
    • F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
    • F21K9/233—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings specially adapted for generating a spot light distribution, e.g. for substitution of reflector lamps
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/20—Light sources comprising attachment means
    • F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
    • F21K9/235—Details of bases or caps, i.e. the parts that connect the light source to a fitting; Arrangement of components within bases or caps
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V17/00—Fastening of component parts of lighting devices, e.g. shades, globes, refractors, reflectors, filters, screens, grids or protective cages
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V19/00—Fastening of light sources or lamp holders
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
    • F21V29/50—Cooling arrangements
    • F21V29/502—Cooling arrangements characterised by the adaptation for cooling of specific components
    • F21V29/503—Cooling arrangements characterised by the adaptation for cooling of specific components of light sources
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
    • F21V29/50—Cooling arrangements
    • F21V29/70—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
    • F21V29/85—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems characterised by the material
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V31/00—Gas-tight or water-tight arrangements
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
    • F21V9/30—Elements containing photoluminescent material distinct from or spaced from the light source
    • F21V9/32—Elements containing photoluminescent material distinct from or spaced from the light source characterised by the arrangement of the photoluminescent material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01K—ELECTRIC INCANDESCENT LAMPS
    • H01K1/00—Details
    • H01K1/02—Incandescent bodies
    • H01K1/04—Incandescent bodies characterised by the material thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
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    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/644—Heat extraction or cooling elements in intimate contact or integrated with parts of the device other than the semiconductor body

Abstract

The invention provides a light-emitting diode filament and a light-emitting diode filament bulb, wherein the light-emitting diode filament comprises: the LED chip comprises a light-permeable base material, at least one LED chip, a phosphor and a first electrode pin, wherein the at least one LED chip is fixed on the front surface of the light-permeable base material; a heat-dissipating luminescent layer is formed on the back or front of the transparent substrate, and is made of electromagnetic wave powder with different radiation bands.

Description

LED filament and LED filament bulb
Technical Field
The present invention relates to a bulb structure, and more particularly, to an led filament and an led filament bulb having improved heat dissipation and reduced dark areas.
Background
Because of the excellent characteristics of LEDs, manufacturers have made LED filaments from LED chips (LED chips) and encapsulated them into transparent bulbs to replace conventional incandescent bulbs.
In published european patent EP2535640B1, a light emitting diode bulb and a light emitting diode filament capable of generating 4PI light are proposed, the light emitting diode filament comprising: the LED filament is characterized in that the LED filament comprises a transparent substrate, an LED chip fixed on the surface of the transparent substrate and a fluorescent powder adhesive layer (fluorescent powder layer) covering the whole transparent substrate and the LED chip, and the fluorescent powder adhesive layer continuously surrounds the whole transparent substrate and the periphery of the LED chip in a circle from the cross section observation of the LED filament, so that the patent technology states that an excitation light source generated by the LED chip can excite the fluorescent powder adhesive layer to emit light so as to generate 4PI light.
Although the led filament bulb has better performance of light emitting than the conventional incandescent bulb, the heat generated by the led will seriously affect the life of the led, and therefore how to effectively dissipate the heat is one of the important problems that the led filament bulb must overcome.
To solve the heat dissipation problem of LED filament bulb, in the granted us patent US9,933,121B2 of the present inventor, a method for manufacturing an LED bulb with heat radiation filament is proposed, which comprises: providing a substrate, wherein two ends of the substrate are provided with conductive parts for electrically connecting an electronic circuit; fixing an LED chip, a lead and a phosphor on the front side (front side) of a base material to form an LED filament (LED filament); a thermal radiation heat dispersion ink (thermal radiation dispersion ink) is coated on the back surface of the substrate, and then the thermal radiation heat dispersion ink coated on the back surface of the substrate is dried to form a thermal radiation heat dispersion film (thermal radiation dispersion film). The heat radiation capability of the LED filament can be improved through the heat radiation film on the back surface of the base material.
In the european patent EP3208514B1, granted by the present inventor, a construction of a light emitting diode filament bulb is proposed, comprising: the lamp holder can be connected with an external power supply to provide driving power for driving the LED filament, the lamp filament support is electrically connected with the lamp holder, the lamp filament support comprises two metal supports, the LED filament is provided with two electrode pins which are respectively electrically connected with the two metal supports to form a driving loop, the surfaces of the two metal supports are coated with a coating containing graphene (graphene) or Boron Nitride (BN) to form a heat dissipation and black body radiation layer, and the back of a base material of the LED filament is provided with a heat radiation heat dissipation film; the metal support, the heat dissipation and black body radiation layer and the heat radiation heat dissipation film are penetrated, so that the heat conductivity and the heat radiation area of the lamp filament support and the light-emitting diode lamp filament can be increased, the heat convection of gas in the transparent lamp shell is promoted, the heat radiation capacity is improved, and the heat dissipation and heat radiation effects of the light-emitting diode lamp filament bulb are improved.
The aforementioned US9,933,121B2 and EP3208514B1 patents can solve the heat dissipation problem of led filament bulbs, but dark regions (dark regions) still exist on the back of the substrate of the led filament.
Disclosure of Invention
The invention aims to provide a light-emitting diode filament and a light-emitting diode filament bulb with improved heat dissipation capability and reduced dark areas.
To solve the above technical problem, an embodiment of the light emitting diode filament of the present invention includes: the LED light source comprises a light-permeable substrate, at least one LED chip fixed on the front surface of the light-permeable substrate, a first electrode pin, a second electrode pin and an LED chip which are connected in series, wherein a heat dissipation light-emitting layer is formed on the back surface or the front surface of the light-permeable substrate; the heat dissipation luminescent layer is made of electromagnetic wave radiation particles, an excitation light source generated by the LED chip can directly excite the phosphor to emit light, and part of the excitation light source of the LED chip can excite the heat dissipation luminescent layer to emit light after penetrating through the light-permeable substrate; the different electromagnetic wave radiation particles of the heat-dissipation luminescent layer can be excited by the excitation light source of the partial chip to luminesce, can also be thermally excited to produce heat radiation, and can further absorb infrared thermal radiation rays to emit visible light, so that the heat dissipation capability of the LED filament is improved, and dark areas are reduced.
One aspect of the invention includes a light emitting diode filament bulb comprising: the lamp comprises a transparent lamp shell, a lamp holder, a driver, at least one filament support and at least one light-emitting diode filament;
the lamp holder is connected to the bottom end of the transparent lamp shell, and is provided with a first power supply end and a second power supply end which are electrically connected with an external power supply;
wherein the light emitting diode filament includes: the LED light source comprises a light-permeable substrate, at least one LED chip, a first electrode pin, a second electrode pin and a phosphor, wherein the LED chip is fixed on the front surface of the light-permeable substrate; the heat dissipation luminescent layer is made of electromagnetic wave powder (including fluorescent powder, heat radiation powder and up-conversion material for converting infrared light into visible light) containing a plurality of different radiation wave bands, an excitation light source generated by the LED chip can directly excite the fluorescent body to emit light, and part of the excitation light source generated by the LED chip can excite the heat dissipation luminescent layer to emit light after penetrating through the light-permeable substrate; the electromagnetic wave powder of the heat dissipation luminescent layer can be excited by part of excitation light sources generated by the LED chip to emit light, or can be thermally excited to generate heat radiation, or can absorb infrared thermal radiation to emit visible light, so that the heat dissipation capability of the LED filament is improved, and dark areas are reduced.
Wherein the light-transmissible substrate comprises: any one of a ceramic substrate, a glass substrate, a sapphire substrate, a plastic substrate, and a paper substrate.
Wherein the light-transmissible substrate comprises: any one of a bendable ceramic substrate, a bendable glass substrate, a bendable plastic, and a bendable paper substrate.
The electromagnetic wave powder of the heat dissipation light-emitting layer comprises any one or combination of fluorescent powder, heat radiation powder and infrared to Visible light (IR to Visible up-conversion materials).
Wherein the phosphor of the heat dissipation luminescent layer includes: any one or combination of aluminate fluorescent powder, nitride fluorescent powder, nitrogen oxide fluorescent powder, silicate fluorescent powder, fluoride fluorescent powder, tin-sulfur alloy compound fluorescent powder and quantum dot fluorescent powder.
Wherein the heat radiating powder of the heat radiating luminous layer comprises: any one or a combination of carbon materials, metal particles (metal particles), ceramic powder and heat radiation glue materials.
Wherein the up-conversion material for converting infrared light into visible light of the heat dissipation luminescent layer comprises: a rare earth ion doped halide material system, a fluorine compound material system, a fluorine oxygen compound material system, an oxide material system, a sulfide containing material system, any one of silicon oxide and phosphates or a combination thereof. The infrared-to-visible light upconverting material can emit visible light through excitation of infrared thermal radiation.
Wherein the up-conversion material for converting infrared light into visible light further comprises: arsenious fluoride-based glass (fluorinated chloride-based glass), and oxyfluoride glass (Al)2O3,CdF2,PbF2,YF3) ZBLAN glass (Nd)3Pb5M3F19:M＝Al,Ti,V,Cr,Fe,Ga；Ho3BaY2F8；Pr3K2YF5)、AlF3High doping (ErF) in the glass-based, fluorine-aluminum (aluminum yttrium Floride) system3) Highly doped (ErF) fluorozirconium Floride glass systems3) Er3Cs3Lu2Br9 glass, GGSX (Pr3GeS2Ga2S3CsCl) glass, PGPNO (Pr3GeS2Ga2S3CsCl)3GeO2PbONb2O5) Glass, Er3TeO glass, La2S3 glass, Phosphate (phospate) glass, and fluoroborate (F:)Fluoro-boron acid salt glass, Tellurium acid salt glass, or a combination thereof.
The carbon material as the heat radiating powder includes: any one or combination of graphene (graphene), carbon black (carbon black), graphite (graphite), carbon nanotubes (carbon nanotubes), carbon sixty, activated carbon (activated carbon), biochar, bamboo charcoal, and coal ash.
The metal particles as the heat radiating powder include: any one or combination of copper (Cu), nickel (Ni), zinc (Zn), iron (Fe), cobalt (Co), silver (Ag), gold (Au), platinum (Pt), and alloys thereof.
The ceramic powder as the heat radiating powder includes: any one of oxide ceramics, nitride ceramics, carbide ceramics, boride ceramics, silicide ceramics, fluoride ceramics, sulfide ceramics, and infrared-radiation powders (infrared-radiation powders), or a combination thereof.
The heat radiation adhesive material as the heat radiation powder includes any one or a combination of silica gel, acryl resin, epoxy resin, polyurethane resin and polyimide resin.
As a preferred embodiment of the present invention, the chamber is filled with a gas having a low viscosity coefficient and a high thermal conductivity coefficient, and the gas includes: any one of hydrogen (H2), helium (He), and argon (Ar), or a mixture thereof.
As a preferred embodiment of the present invention, the chamber of the transparent lamp envelope is in a vacuum or low-pressure sealed state.
Wherein the low pressure is 0.01 to 0.1 MPa.
As a preferred embodiment of the present invention, the chamber of the transparent lamp envelope is in a low-pressure or normal-pressure sealed state, and the chamber is filled with a gas with a low viscosity coefficient and a high thermal conductivity coefficient, and the gas includes: any one of hydrogen (H2), helium (He), and argon (Ar), or a mixture thereof.
The light-emitting diode filament has the advantages that the heat dissipation capability is improved and the dark area is reduced by the heat dissipation light-emitting layer on the back surface of the light-permeable substrate.
Other features and embodiments of the present invention will be described in detail below with reference to the drawings.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments described in the present application, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a cross-sectional construction of one embodiment of a light emitting diode filament of the present invention;
FIG. 2 is a cross-sectional configuration view of FIG. 1 at location A-A;
FIG. 3 is a schematic view of the light emitting operation of the LED filament of the present invention;
FIGS. 4A and 4B are schematic diagrams of the light emitting operation of another embodiment of the LED filament of the present invention;
FIG. 5 is a cross-sectional construction of one embodiment of the LED filament bulb of the present invention;
fig. 6 is a cross-sectional construction of another embodiment of the led filament bulb of the present invention.
Description of the symbols
1 light-emitting diode filament 10 light-permeable substrate
11 first electrode lead 12 second electrode lead
20 LED chip 21 metal wire 22 die attach adhesive
30 heat dissipation luminescent layer 40 fluorophor 50 transparent lamp shell
51 chamber 52 exhaust tube 60 lamp cap
61 first power supply terminal 62 second power supply terminal 70 driver
81, 82 metal support 83 cylinder 84, 85 metal wire
Detailed Description
The positional relationship described in the following embodiments includes: the top, bottom, left and right, unless otherwise indicated, are based on the orientation of the elements in the drawings.
Fig. 1 is a cross-sectional view of an embodiment of an led filament 1 according to the present invention.
The invention provides an embodiment structure of a light-emitting diode filament 1, which comprises the following components:
a light-permeable substrate 10, at least one LED chip 20 fixed on the front surface of the light-permeable substrate 10, a first electrode pin 11 and a second electrode pin 12 at two ends of the light-permeable substrate 10 and connected in series with the LED chip 20, a heat-dissipating light-emitting layer 30 formed on the back or front surface of the light-permeable substrate 10, the heat-dissipating light-emitting layer 30 being made of electromagnetic wave powder (including any one or combination of fluorescent powder, thermal radiation powder and infrared-to-visible light up-conversion material) containing multiple different radiation bands; and a phosphor 40, the phosphor 40 being disposed (dispensed on) on the front surface of the light-permeable substrate 10, for example, a phosphor paste containing phosphor is coated on the front surface of the light-permeable substrate 10 to form the phosphor 40, the phosphor 40 encapsulates the LED chip 20 therein, and the first electrode lead 11 and the second electrode lead 12 are exposed outside the phosphor 20; as shown in fig. 3, the excitation light source (usually blue light, shown by dotted line in fig. 3) generated by the LED chip 20 can directly excite the phosphor 40 to emit light for illumination (usually white light, shown by solid line in fig. 3), a part of the excitation light source of the LED chip 20 can pass through the transparent substrate 10 to excite the heat-dissipation light-emitting layer 30 to emit light for illumination (usually white light, shown by solid line in fig. 3), wherein, the part of the excitation light source can excite the fluorescent powder of the heat-dissipation light-emitting layer 30 to emit light, so that the heat-dissipation light-emitting layer 30 can generate light on the back of the LED filament 1, thereby reducing the dark area of the LED filament 1, the thermal radiation powder of the heat-dissipating luminescent layer 30 can generate thermal radiation by thermal excitation, so as to enhance the heat-dissipating effect of the led filament 1. Furthermore, the infrared-to-visible light up-conversion material of the heat-dissipation light-emitting layer 30 can absorb the heat radiation of infrared light to generate visible light, so as to enhance the heat-dissipation effect of the led filament 1 and reduce the dark area of the led filament 1.
One embodiment of forming a heat-dissipating light-emitting layer 30 on the back or front side of the light-transmissive substrate 10 includes: adding the electromagnetic wave powder into the silica gel for mixing, and coating the mixture on the back or the front of the light-permeable substrate 10 by gluing or dispensing to form a heat dissipation light-emitting layer 30; another possible implementation includes: on the back or front of the light-permeable substrate 10, the electromagnetic wave powder is directly sintered on the back of the light-permeable substrate 10 together with the light-permeable substrate 10.
Please refer to fig. 4A and fig. 4B, which are schematic diagrams illustrating a light emitting operation of another embodiment of the light emitting diode filament according to the present invention. The LED chip 20 of fig. 4A is a back-plated chip, an excitation light source (usually blue light, shown by a dotted line in fig. 4A) generated by the LED chip 20 emits to both sides, and the excitation light source generated by the LED chip 20 can directly excite the phosphor powder contained in the phosphor 40 to emit light (shown by a solid line in fig. 4A) for generating illumination light (for example, mixed into white light); part of the excitation light source of the LED chip 20 can pass through the light-permeable substrate 10 to excite the phosphor contained in the heat-dissipating light-emitting layer 30 to emit light. The LED chip 20 of fig. 4B is a back-plating-free chip, the excitation light source generated by the LED chip 20 (the excitation light source is usually blue light, and is shown by a dotted line in fig. 4A) can be emitted to the periphery without being shielded, and the excitation light source generated by the LED chip 20 can directly excite the phosphor powder contained in the phosphor 40 to emit light for illumination (shown by a solid line in fig. 4B), for example, to mix into white light; part of the excitation light source of the LED chip 20 can pass through the light-permeable substrate 10 to excite the phosphor contained in the heat-dissipating light-emitting layer 30 to emit light.
The light transmissible substrate 10 may be made of a transparent or translucent material, and one preferred embodiment of the material from which the light transmissible substrate 10 is made comprises: any one of a ceramic substrate, a glass substrate, a sapphire substrate, a plastic substrate, and a paper substrate. In another preferred embodiment, the material from which the light transmissible substrate 10 is made is a bendable material comprising: any one of a bendable ceramic substrate, a bendable glass substrate, a bendable plastic, and a bendable paper substrate, and thus, the led filament 1 can be bent and is suitable for application to an led filament bulb having a curved transparent envelope 50 (see fig. 6).
As a preferred embodiment of the present invention, the LED filament 1 includes a plurality of LED chips 20 (see fig. 1) connected in series, the LED chips 20 are fixed on the front surface of the light-permeable substrate 10 by using a transparent die attach adhesive 22, any two adjacent LED chips 20 are connected in series by using a metal wire 21, the LED chips 20 can be LED chips 20 made by any one of a horizontal (normal) LED structure, a Vertical (Vertical) LED structure and a Flip Chip LED structure, in a preferred embodiment, the width of the LED chips 20 is smaller than the width of the cross section of the light-permeable substrate 10, the phosphor 40 thus disposed on the front surface of the light-permeable base material 10 can better cover the LED chip 20 and the metal wires 21, and part of the excitation light source generated by the LED chip 20 can also pass through the light-permeable substrate 10 to excite the heat-dissipation light-emitting layer 30 to emit light.
The heat-dissipating light-emitting layer 30 is made of electromagnetic wave powder containing a plurality of different radiation bands, wherein the electromagnetic wave powder contains any one or a combination of fluorescent powder, thermal radiation powder and infrared-to-visible light up-conversion material.
The phosphor of the heat-dissipating light-emitting layer 30 includes: any one or combination of aluminate fluorescent powder, nitride fluorescent powder, nitrogen oxide fluorescent powder, silicate fluorescent powder, fluoride fluorescent powder, tin-sulfur alloy compound fluorescent powder and quantum dot fluorescent powder.
Wherein the heat radiating powder of the heat radiating light emitting layer 30 includes: any one or combination of carbon materials, metal particles (metal particles), ceramic powder and heat radiation glue materials, the heat radiation powder is basically a plurality of heat radiation powders which can generate different electromagnetic wave bands, and the heat radiation powder can be thermally excited by heat generated by the LED filament 1 to generate heat radiation so as to improve the heat radiation effect of the LED filament 1.
The up-conversion material for converting infrared light into visible light of the heat dissipation light-emitting layer 30 includes: a rare earth ion doped halide material system, a fluorine compound material system, a fluorine oxygen compound material system, an oxide material system, a sulfide containing material system, any one of silicon oxide and phosphates or a combination thereof. The up-conversion material for converting infrared light into visible light can emit visible light by being excited by infrared thermal radiation, and the heat dissipation effect of the LED filament 1 is synchronously improved.
Wherein the up-conversion material for converting infrared light into visible light further comprises: arsenious fluoride-based glass (fluorinated chloride-based glass), and oxyfluoride glass (Al)2O3,CdF2,PbF2,YF3) ZBLAN glass (Nd)3Pb5M3F19:M＝Al,Ti,V,Cr,Fe,Ga；Ho3BaY2F8；Pr3K2YF5)、AlF3High doping (ErF) in the glass-based, fluorine-aluminum (aluminum yttrium Floride) system3) Highly doped (ErF) fluorozirconium Floride glass systems3) Er3Cs3Lu2Br9 glass, GGSX (Pr3GeS2Ga2S3CsCl) glass, PGPNO (Pr3GeS2Ga2S3CsCl)3GeO2PbONb2O5) Any one or combination of glass, Er3TeO glass, La2S3 glass, Phosphate (phospate) glass, fluoroborate (fluo-Boric acid salt) glass, and tellurite (Tellurium acid salt) glass.
Wherein the carbon material as the heat radiating powder includes: any one or combination of graphene (graphene), carbon black (carbon black), graphite (graphite), carbon nanotubes (carbon nanotubes), carbon sixty, activated carbon (activated carbon), biochar, bamboo charcoal, and coal ash.
Wherein the metal particles as the heat radiating powder include: any one or combination of copper (Cu), nickel (Ni), zinc (Zn), iron (Fe), cobalt (Co), silver (Ag), gold (Au), platinum (Pt), and alloys thereof.
Wherein the ceramic powder as the heat radiating powder includes: any one of oxide ceramics, nitride ceramics, carbide ceramics, boride ceramics, silicide ceramics, fluoride ceramics, sulfide ceramics and other infrared-radiation powders (infrared-radiation powders), or a combination thereof.
The heat radiation adhesive material as the heat radiation powder comprises any one or combination of silica gel, acryl resin, epoxy resin, polyurethane resin and polyimide resin.
Fig. 5 is a cross-sectional structural view of an embodiment of the led filament bulb according to the present invention. An example configuration of a light emitting diode filament bulb includes: a transparent lamp housing 50, a lamp base 60, a driver 70, at least one filament support and at least one aforementioned led filament 1.
The transparent lamp housing 50 is hollow to form a sealed cavity 51, the transparent housing 50 is transparent and has an exhaust pipe 52 for communicating the cavity 51 with the outside of the transparent lamp housing 50, the lamp head 60 is connected to the bottom end of the transparent lamp housing 50, and the lamp head 60 has a first power end 61 and a second power end 62 for electrically connecting to an external power source. In one embodiment, the exhaust tube 52 of the transparent lamp envelope 50 is sealed by a lamp cap 60, and in other embodiments, the exhaust tube 52 of the transparent lamp envelope 50 may be sealed by a sealing assembly.
The driver 70 is disposed in the lamp base 60, the driver 70 is disposed between the transparent lamp housing 50 and the lamp base 60, the driver 70 can be directly or indirectly electrically connected to the first electrode pin 11 and the second electrode pin 12 of the led filament 1, and the first power terminal 61 and the second power terminal 62 of the lamp base 60, and the driver 70 is configured to convert an external power into a driving power for driving the led filament 1.
In a preferred embodiment of the present invention, the chamber 51 of the transparent lamp housing 50 is in a vacuum or sealed state at a low pressure of 0.01 to 0.1 MPa.
In another preferred embodiment of the present invention, the chamber 51 of the transparent lamp housing 50 is sealed at low pressure or normal pressure, and the chamber 51 is filled with a gas having a low viscosity coefficient and a high thermal conductivity coefficient, the gas including: any one or a mixture of hydrogen (H2), helium (He) and argon (Ar) can increase the thermal conductivity and the heat radiation area of the led filament 1, and has the effects of promoting the heat convection of the gas inside the transparent lamp housing 50 and increasing the heat radiation, thereby improving the heat radiation and heat radiation effect of the led filament bulb.
One embodiment of the filament support is constructed as shown in fig. 5, the filament support includes two metal supports 81 and 82, the two metal supports 81 and 82 penetrate the transparent lamp envelope 50 and are tightly combined with the transparent lamp envelope 50 without affecting the sealed state of the chamber 51, generally the transparent lamp envelope 50 is made of glass or plastic material, the transparent envelope 50 can be formed while being tightly combined with the two metal supports 81 and 82, the top ends of the two metal supports 81 and 82 enter the cavity 51 of the transparent envelope 50 to electrically connect the first electrode lead 11 and the second electrode lead 12 of the led filament 1, the bottom ends of the two metal supports 81 and 82 penetrate through the transparent envelope 50 and then are electrically connected to the driver 70, and the driver 70 can indirectly electrically connect the first electrode lead 11 and the second electrode lead 12 of the led filament 1 through the two metal supports 81 and 82.
Another embodiment of the filament support is constructed as shown in fig. 6, and the filament support includes a cylindrical body 83 extending into the chamber 51 and two metal wires 84 and 85 penetrating through the cylindrical body 83, preferably in a manner of forming the cylindrical body 83 at the same time as the transparent lamp envelope 50 is made of glass or plastic, so that the cylindrical body 83 can be integrated with the transparent lamp envelope 50, the two metal wires 84 and 85 penetrate through the cylindrical body 83 and are tightly combined with the cylindrical body 83 without affecting the sealing state of the chamber 51, the bottom ends of the two metal wires 84 and 85 penetrate through the cylindrical body 83 and are then electrically connected to the driver 70, and the top ends of the two metal wires 84 and 85 enter the chamber 51 of the transparent lamp envelope 50 to electrically connect the first electrode lead 11 and the second electrode lead 12 of the light emitting diode filament 1.
The above-described embodiments and/or implementations are only for illustrating the preferred embodiments and/or implementations of the present technology, and are not intended to limit the implementations of the present technology in any way, and those skilled in the art may make modifications or changes to other equivalent embodiments without departing from the scope of the technical means disclosed in the present disclosure, but should be construed as the technology or implementations substantially the same as the present technology.

Claims (27)

1. A light emitting diode filament, comprising: the LED chip comprises a light-permeable base material, at least one LED chip and a phosphor, wherein the light-permeable base material is fixed on the front surface of the light-permeable base material, a first electrode pin and a second electrode pin are arranged at two ends of the light-permeable base material and are connected with the LED chip in series, a heat dissipation luminescent layer is formed on the back surface or the front surface of the light-permeable base material, the phosphor is arranged on the front surface of the light-permeable base material, and the LED chip is packaged in the phosphor and exposes the first electrode pin and the second electrode pin; the heat-dissipation luminescent layer is made of electromagnetic wave powder containing a plurality of different radiation wave bands, an excitation light source generated by the LED chip can directly excite the fluorescent body to emit light, part of the excitation light source of the LED chip can pass through the light-permeable substrate and then excite the heat-dissipation luminescent layer to emit light, and the electromagnetic wave powder of the heat-dissipation luminescent layer can be excited by part of the excitation light source generated by the LED chip to emit light, or can generate heat radiation through thermal excitation, or can absorb infrared thermal radiation to emit visible light.
2. The led filament of claim 1, wherein the light transmissible substrate comprises: any one of a ceramic substrate, a glass substrate, a sapphire substrate, a plastic substrate, and a paper substrate.
3. The led filament of claim 1, wherein the light transmissible substrate comprises: any one of a bendable ceramic substrate, a bendable glass substrate, a bendable plastic, and a bendable paper substrate.
4. The led filament of claim 1, wherein the electromagnetic wave powder of the heat-dissipating light-emitting layer comprises any one or a combination of a phosphor, a thermal radiation powder, and an infrared-to-visible light conversion material.
5. The led filament of claim 4, wherein the phosphor of the heat-dissipating light-emitting layer comprises: any one or combination of aluminate fluorescent powder, nitride fluorescent powder, nitrogen oxide fluorescent powder, silicate fluorescent powder, fluoride fluorescent powder, tin-sulfur alloy compound fluorescent powder and quantum dot fluorescent powder.
6. The light-emitting diode filament as claimed in claim 4, wherein the heat radiating powder of the heat-radiating light-emitting layer includes: any one or combination of carbon material, metal particles, ceramic powder and heat radiation glue material.
7. The led filament of claim 4, wherein the infrared-to-visible light up-converting material of the heat-dissipating luminescent layer comprises: a rare earth ion doped halide material system, a fluorine compound material system, a fluorine oxygen compound material system, an oxide material system, a sulfide containing material system, any one of silicon oxide and phosphates or a combination thereof.
8. The light emitting diode filament as claimed in claim 6, wherein the carbon material comprises: any one or combination of graphene, carbon black, graphite, carbon nanotubes, carbon sixty, activated carbon, biochar, bamboo charcoal and coal ash.
9. The light-emitting diode filament of claim 6, wherein the metal particles comprise: any one or combination of copper, nickel, zinc, iron, cobalt, silver, gold, platinum, and alloys thereof.
10. The led filament of claim 6, wherein the ceramic powder comprises: any one of or a combination of oxide ceramics, nitride ceramics, carbide ceramics, boride ceramics, silicide ceramics, fluoride ceramics, sulfide ceramics and infrared radiation powders.
11. The light-emitting diode filament according to claim 6, wherein the heat-radiating adhesive material comprises any one or a combination of silicone, acryl resin, epoxy resin, urethane resin, and polyimide resin.
12. The led filament of claim 7, wherein the infrared to visible light upconverting material further comprises: arsenious fluoride silicate glass, oxyfluoride glass, ZBLAN glass, AlF3Any one or combination of base glass, highly doped in a fluoroaluminium system, highly doped in a fluorozircoaluminate glass system, Er3Cs3Lu2Br9 glass, GGSX glass, PGPNO glass, Er3TeO glass, La2S3 glass, phosphate glass, fluoroborate glass, and tellurate glass.
13. A light emitting diode filament bulb, comprising: the lamp comprises a transparent lamp shell, a lamp holder, a driver, at least one filament support and at least one light-emitting diode filament;
the transparent lamp shell is hollow inside to form a sealed cavity, the transparent shell can transmit light and is provided with an exhaust pipe for communicating the cavity and the outside of the transparent lamp shell, the lamp holder is connected to the bottom end of the transparent lamp shell, and the lamp holder is provided with a first power supply end and a second power supply end for electrically connecting an external power supply;
this emitting diode filament includes: the LED chip comprises a light-permeable base material, at least one LED chip and a phosphor, wherein the light-permeable base material is fixed on the front surface of the light-permeable base material, a first electrode pin and a second electrode pin are arranged at two ends of the light-permeable base material and are connected with the LED chip in series, a heat dissipation luminescent layer is formed on the back surface or the front surface of the light-permeable base material, the phosphor is arranged on the front surface of the light-permeable base material, and the LED chip is packaged in the phosphor and exposes the first electrode pin and the second electrode pin; the heat-dissipation luminescent layer is made of electromagnetic wave powder containing a plurality of different radiation wave bands, an excitation light source generated by the LED chip can directly excite the fluorescent body to emit light, part of the excitation light source generated by the LED chip can pass through the light-permeable substrate and then excite the heat-dissipation luminescent layer to emit light, and the electromagnetic wave powder of the heat-dissipation luminescent layer can be excited by part of the excitation light source generated by the LED chip to emit light, or can generate heat radiation by heat excitation, or can absorb infrared thermal radiation to emit visible light.
14. The led filament bulb as set forth in claim 13, wherein the chamber of the transparent envelope is vacuum sealed.
15. The led filament bulb as claimed in claim 13, wherein the chamber of the transparent envelope is sealed at a low pressure of 0.01 to 0. MPa.
16. The led filament bulb of claim 13, wherein the chamber is at low or normal pressure, and the chamber is filled with a low viscosity and high thermal conductivity gas comprising: any one of or a mixture of hydrogen, helium and argon.
17. The led filament bulb of claim 13, wherein the light transmissible substrate comprises: any one of a ceramic substrate, a glass substrate, a sapphire substrate, a plastic substrate, and a paper substrate.
18. The led filament bulb of claim 13, wherein the light transmissible substrate comprises: any one of a bendable ceramic substrate, a bendable glass substrate, a bendable plastic, and a bendable paper substrate.
19. The led filament bulb as claimed in claim 13, wherein the electromagnetic wave powder of the heat-dissipating light-emitting layer comprises any one or a combination of fluorescent powder, heat-radiating powder and infrared-to-visible light up-converting material.
20. The led filament bulb as set forth in claim 19, wherein the phosphor of the heat-dissipating light-emitting layer comprises: any one or combination of aluminate fluorescent powder, nitride fluorescent powder, nitrogen oxide fluorescent powder, silicate fluorescent powder, fluoride fluorescent powder, tin-sulfur alloy compound fluorescent powder and quantum dot fluorescent powder.
21. The led filament bulb as set forth in claim 19, wherein the heat radiating powder of the heat radiating light emitting layer includes: any one or combination of carbon material, metal particles, ceramic powder and heat radiation glue material.
22. The led filament bulb as claimed in claim 19, wherein the infrared light-to-visible light up-converting material of the heat-dissipating luminescent layer comprises: a rare earth ion doped halide material system, a fluorine compound material system, a fluorine oxygen compound material system, an oxide material system, a sulfide containing material system, any one of silicon oxide and phosphates or a combination thereof.
23. The led filament bulb of claim 21, wherein the carbon material comprises: any one or combination of graphene, carbon black, graphite, carbon nanotubes, carbon sixty, activated carbon, biochar, bamboo charcoal and coal ash.
24. The led filament bulb as set forth in claim 21, wherein the metal particles comprise: any one or combination of copper, nickel, zinc, iron, cobalt, silver, gold, platinum, and alloys thereof.
25. The led filament bulb as set forth in claim 21, wherein the ceramic powder comprises: any one or combination of oxide ceramics, nitride ceramics, carbide ceramics, boride ceramics, silicide ceramics, fluoride ceramics, sulfide ceramics and other infrared radiation powders.
26. The led filament bulb as set forth in claim 21, wherein the heat-radiating adhesive material includes: any one of or a combination of silicone, acryl resin, epoxy resin, polyurethane resin, and polyimide resin.
27. The led filament bulb of claim 22, wherein the infrared to visible light upconverting material further comprises: arsenious fluoride silicate glass, oxyfluoride glass, ZBLAN glass, AlF3Any one or combination of base glass, highly doped in a fluoroaluminium system, highly doped in a fluorozircoaluminate glass system, Er3Cs3Lu2Br9 glass, GGSX glass, PGPNO glass, Er3TeO glass, La2S3 glass, phosphate glass, fluoroborate glass, and tellurate glass.
CN201811127617.4A 2018-09-27 2018-09-27 LED filament and LED filament bulb Pending CN110957307A (en)

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CN201811127617.4A CN110957307A (en) 2018-09-27 2018-09-27 LED filament and LED filament bulb
JP2019058506A JP2020053670A (en) 2018-09-27 2019-03-26 Light-emitting diode filament and light-emitting diode filament bulb
JP2019001074U JP3221601U (en) 2018-09-27 2019-03-27 Light emitting diode filament and light emitting diode filament bulb
TW108112831A TW202013775A (en) 2018-09-27 2019-04-12 Filament struccture and led light bulb having the same
TW108204484U TWM594672U (en) 2018-09-27 2019-04-12 LED filament structure and LED light bulb having the same
PCT/CN2019/098580 WO2020063103A1 (en) 2018-09-27 2019-07-31 Light emitting diode filament and light emitting diode filament bulb

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