M442581 五、新型說明： 【新型所屬之技術領域】 [0001] 本創作係有關於一種發光二極體，尤指一種具靜電防護 機制的發光二極體。 【先前技術】 [0002] 隨著科技的曰新月異，越來越多種發光二極體（Light Emitting Diode，LED)被研發出來，由於發光二極體 具有體積小、耗電低以及壽命長…等優點，因此目前已 廣泛應用於家電、車輛、電腦週邊產品、通訊產品以及 照明產品…等上，發光二極體已然成為新世代的光源， 其重要性不言可喻。 [0003] 然而，發光二極體卻很容易在製造或使用過程中受到靜 電放電（Electrostatic Discharge，簡稱為「ESD」） 的影響而損壞。尤其GaN系列之LED產品，包括藍光、綠 光、白光及紫外光，因為GaN本身材料因素，對靜電之抵 抗力弱，很容易在使用過程中遭受靜電破壞。因此如何 避免發光二極體在製造過程中或使用中遭到靜電放電破 壞，是設計使用發光二極體上非常重要的考慮因素之一 [0004] 為了解決上述的靜電放電問題，先前技術中已有利用齊 納二極體（Zener diode)電性連接於發光二極體上的解 決方案，其主要原理是將發光二極體内的發光晶片和齊 納二極體分別設置在基板電極的不同位置上，並且使發 光二極體的發光晶片與¥納二極體彼此以並聯方式反向 電性連接。在正常情況下，當有輸入正向工作電壓時， 1012031117-0 10120962(^單織 A〇101 第 3 頁 / 共 18 頁 M442581 此輸入電壓僅會讓發光二極體導通而發光，而不會通過 齊納二極體。但有靜電放電現象時，將會帶來異常大的 輸入電壓，這電壓將會使得齊納二極體崩潰，進而使大 部分的電流均由齊納二極體通過，而不由發光二極體通 過，而避免發光二極體遭到靜電放電的破壞，以藉此保 護發光晶片免於受到靜電放電影響。 [0005] 惟，此方案卻因為增設了齊納二極體，反而造成發光晶 片所發出的光會被齊納二極體給吸收掉約20%的重大缺失 。於是，改將齊納二極體埋入於基板電極内，以大幅降 低齊納二極體吸收發光晶片之光的比例，藉此相對提高 發光晶片的亮度。 [0006] 另外，齊納二極體的製程方面略為複雜，使得其成本不 易降低，因此，也有業者採用成本較低的蕭基二極體來 取代傳統上所使用的齊納二極體，使得發光二極體電路 結構成本也隨之降低。 [0007] 然而，不論在發光二極體上增設齊納二極體或蕭基二極 體來構成靜電防護機構之方案，均因設置一額外元件而 增加製造難度與成本。在目前製造業亟欲降低成本與簡 化製程的考量下，著實有改進之必要。而且，一旦齊納 二極體或蕭基二極體受到靜電放電的異常電壓而崩潰時 ，此發光二極體將不再具有靜電防護機制，因此，倘若 有一種能夠對發光二極體持續產生靜電防護效果而不易 崩潰，並且製造簡易又成本降低，則對發光二極體的製 造業者來說，無疑是一大福音。 [0008] 因此，如何解決上述之問題點，即成為本創作人所改良 10120962(^^^^ A〇101 ? 4 I / ^ 18 1 1012031117-0 M442581 之目標。 【新型内容】 [0009] 本創作之一目的，在於提供一種具靜電防護機制的發光 二極體，其能夠對發光二極體持續產生靜電防護效果而 不易崩潰。 [0010] 本創作之另一目的，在於提供一種具靜電防護機制的發 光二極體，其製造簡易又成本降低。 ， [0011] 為了達成上述之目的，本創作係提供一種具靜電防護機 ® 制的發光二極體，包括： [0012] 一導線架，具有複數導電接腳； [0013] 一發光晶片，安裝在該導線架上並電性連接該等導電接 腳，該發光晶片在該導線架上產生一出光區； [0014] 至少一靜電防護元件，設置於該出光區附近並與該導線 架左右二侧的該二導電接腳電性隔離； [0015] 一封裝體，用以封裝結合該導線架與該靜電防護元件， 且一部分的該靜電防護元件凸伸出該封裝體外。 [0016] 相較於先前技術，本創作具有以下功效： [0017] 根據本創作，將至少一靜電防護元件設置於發光晶片的 出光區附近並與導線架左右二側的二導電接腳電性隔離 ，且一部分的靜電防護元件凸伸出封裝體外；因此，凸 出於封裝體外的一部分靜電防護元件產生如「避雷針」 的效果，特別能夠將出光區附近可能危害到發光晶片的 靜電發電所產生之異常電壓與電流引導出去，使其無法 10120962产單'賊 A0101 第5頁/共18頁 1012031117-0 M442581 通過發光晶片與導線架，故能產生良好的靜電防護效果 〇 [0018] 而且，本創作的靜電防護元件是運用如同「避雷針j引 導靜電放電的電壓或電流之方式，並非如先知技術中使 用齊納二極體或蕭基二極體以如同「保險絲」般的犧牲 方式來達成靜電防護效果，一旦齊納二極體或蕭基二極 體受到靜電放電的過大電壓或電流而燒毁崩壞時，就不 再具有靜電防護效果。相較之下，本創作的靜電防護元 件可以重複使用且不會受到靜電放電而燒毁。 [0019] 另一方面，本創作的靜電防護元件是由導電金屬以沖壓 彎折方式製成，其成本便宜，且製造相當簡單，易於大 量製造。 【實施方式】 [0020] 有關本創作之詳細說明及技術内容，將配合圖式說明如 下，然而所附圖式僅作為說明用途，並非用於侷限本創 作。 [0021] 請參考第一圖至第六圖，本創作係提供一種具靜電防護 機制的發光二極體1(以下簡稱為「發光二極體1」），其 包括：一導線架10、一發光晶片20、至少一靜電防護元 件30、及一封裝體40。 [0022] 如第一圖所示，導線架10是由導電金屬沖壓彎折成型而 具有複數導電接腳11，每一導電接腳11是由一安裝段111 、延伸自該安裝段111的一彎折段112、及連接該彎折段 112並遠離該安裝段111的一接腳段113所構成。安裝段 ΗΠ麗#單舰删1 第6頁/共18頁 1012031117-0 M442581 111係用以供發光晶片20安裝，彎折段112係用以彎折連 接於安裝段111與接腳段113之間，接腳段113則是用以 電性連接至一電路板（未顯示），藉此，發光晶片20可以 從電路板獲得發光所需的電力。 [0023] 發光晶片20係安裝在導線架10上並電性連接該等導電接 腳11，若為單色型的發光晶片20就只有一顆晶粒，若為 多色混合型的發光晶片20就具有多顆晶粒。如第二圖所 示，在本創作中，發光晶片20具有紅光（R)、綠光（G)、 及藍光（B)三顆晶粒21、22與23，其分別安裝於三個不 同的導電接腳11之安裝段111上；然後，多條引線24、 25、26將這些晶粒21、22、23與不同的導電接腳11彼此 電性焊接起來，而達成發光晶片20與導線架10的導電接 腳11之電性焊接。從第三圖的俯視圖可以看出，導線架 10的每一導電接腳11並未相互接觸，而是分別電性連接 至導線架10底部的一電路板（未顯示）上，以形成不同的 腳位。 [0024] 要特別說明的是，發光晶片20的各個晶粒21、22、23在 導線架10上一起產生一出光區Z(第八圖），此出光區Z的 長度、寬度與深度係根據晶粒21、22、23的出光角度而 有所不同，如第八圖所示，此出光區Z在後續的封裝作業 中並未被封裝起來，而是在出光區Z的上方設置一透光材 料製成的出光罩50以與封裝體40的表面平齊，藉此保護 發光晶片20又同時具有最大的出光效率。 [0025] 在本創作的實施例中，設有一對靜電防護元件30，其分 別設置於出光區Z附近並與導線架10左右二側的該二導電 10120962(P編號删1 第7頁/共18頁 1012031117-0 M442581 接腳11電性隔離（如第三圖所示）。要特別說明的是，每 一靜電防護元件30是由導電金屬沖壓彎折成型，且是由 一主體部31、延伸自該主體部31的一彎折部32、連接該 彎折部32並遠離該主體部31的一接腳部33、及彎折延伸 於該主體部31的另一端以遠離該彎折部32的一靜電接收 部34所構成。主體部31大致平齊於相鄰導電接腳11的安 裝段111，彎折部32的彎折角度、長度與高度大致對應相 鄰導電接腳11的彎折段112，接腳部33的長度與厚度大致 對應相鄰導電接腳11的接腳段113，藉此配置，每一靜電 防護元件30的接腳部33可以與導線架10的導電接腳11之 接腳段113分開電性接觸一電路板（未顯示）。 [0026] 封裝體40是用以封裝結合導線架10與該靜電防護元件30 ，使得導線架10的這些分離導電接腳11能夠與二靜電防 護元件30—起結合成一發光二極體1。要特別說明的是， 一部分的該靜電防護元件30(在此為靜電接收部34)凸伸 出封裝體40外，此凸出於封裝體40上表面的靜電接收部 34就是用來吸收掉可能危害發光二極體1的外來靜電。 [0027] 為了提高靜電防護效果，每一靜電接收部34可以延伸出 一分支部35，此分支部35亦設置於出光區Z的附近且垂直 於該靜電接收部34，其長度可以根據實際需要而修改。 藉此配置，此對靜電防護元件30的二靜電接收部34與分 支部35分別對稱設置於導線架10二側，而提供位於出光 區Z内的發光晶片20較佳的靜電防護效果。M442581 V. New description: [New technical field] [0001] This creation is about a light-emitting diode, especially a light-emitting diode with electrostatic protection mechanism. [Prior Art] [0002] With the rapid development of technology, more and more Light Emitting Diodes (LEDs) have been developed, because the LEDs have small size, low power consumption and long life. ... and so on, so it has been widely used in home appliances, vehicles, computer peripheral products, communication products and lighting products, etc., the light-emitting diode has become a new generation of light source, its importance is self-evident. [0003] However, the light-emitting diode is easily damaged by the electrostatic discharge (Electrostatic Discharge, referred to as "ESD") during manufacture or use. In particular, GaN series LED products, including blue light, green light, white light and ultraviolet light, are weak in resistance to static electricity due to the material of GaN itself, and are easily subjected to electrostatic damage during use. Therefore, how to avoid the electrostatic discharge damage of the LED during the manufacturing process or in use is one of the most important considerations in the design of the LED [0004]. In order to solve the above electrostatic discharge problem, the prior art has There is a solution for electrically connecting a Zener diode to a light-emitting diode. The main principle is to set the light-emitting diode and the Zener diode in the light-emitting diode to be different in the substrate electrode. In position, the light-emitting diode of the light-emitting diode and the nano-diode are electrically connected in reverse in parallel with each other. Under normal conditions, when there is input positive input voltage, 1012031117-0 10120962 (^单织A〇101 Page 3 of 18 M442581 This input voltage will only make the LED turn on and not light, not Through the Zener diode, but when there is electrostatic discharge, it will bring an abnormally large input voltage, which will cause the Zener diode to collapse, so that most of the current is passed by the Zener diode. Instead of being passed by the light-emitting diode, the light-emitting diode is prevented from being destroyed by electrostatic discharge, thereby protecting the light-emitting chip from electrostatic discharge. [0005] However, this solution is due to the addition of Zener diodes. The body, on the contrary, causes the light emitted by the illuminating chip to be absorbed by the Zener diode by about 20%. Therefore, the Zener diode is buried in the substrate electrode to greatly reduce the Zener diode. The body absorbs the proportion of the light of the light-emitting chip, thereby relatively increasing the brightness of the light-emitting chip. [0006] In addition, the process of the Zener diode is slightly complicated, so that the cost is not easily reduced, and therefore, the manufacturer adopts a lower cost. The base diode replaces the Zener diode that is conventionally used, so that the cost of the LED structure is also reduced. [0007] However, whether the Zener diode or Xiao is added to the light-emitting diode The solution of the base diode to form an electrostatic protection mechanism increases the manufacturing difficulty and cost by providing an additional component. Under the current manufacturing industry's desire to reduce costs and simplify the process, there is indeed a need for improvement. When the nano-diode or the Xiaoji diode is collapsed by the abnormal voltage of the electrostatic discharge, the light-emitting diode will no longer have an electrostatic protection mechanism, and therefore, if there is a kind of electrostatic protection effect on the light-emitting diode. It is not easy to collapse, and the manufacturing is simple and the cost is reduced. It is undoubtedly a great boon for the manufacturers of light-emitting diodes. [0008] Therefore, how to solve the above problems becomes the improvement of this creator 10120962 (^ ^^^ A〇101 ? 4 I / ^ 18 1 1012031117-0 The target of M442581. [New content] [0009] One of the purposes of this creation is to provide an electrostatic protection mechanism. The light diode can continuously generate an electrostatic protection effect on the light emitting diode without being easily collapsed. [0010] Another object of the present invention is to provide a light emitting diode with an electrostatic protection mechanism, which is easy to manufacture and low in cost. [0011] In order to achieve the above object, the present invention provides a light-emitting diode manufactured by an electrostatic protection machine, comprising: [0012] a lead frame having a plurality of conductive pins; [0013] an illuminating wafer, mounted And electrically connecting the conductive pins on the lead frame, the light emitting chip generates a light exiting area on the lead frame; [0014] at least one electrostatic protection component disposed near the light exiting region and adjacent to the lead frame The two conductive pins on the side are electrically isolated; [0015] a package for encapsulating the lead frame and the electrostatic protection component, and a portion of the static protection component protrudes outside the package. [0016] Compared with the prior art, the present invention has the following effects: [0017] According to the present invention, at least one electrostatic protection component is disposed near the light exiting region of the light emitting chip and electrically connected to the two conductive pins on the left and right sides of the lead frame. Isolation, and a part of the ESD protection component protrudes from the outside of the package; therefore, a part of the ESD protection element protruding from the outside of the package produces an effect such as a "lightning rod", and in particular, it can generate electrostatic generation near the light exit area that may damage the illuminating chip. The abnormal voltage and current are led out, making it impossible for 10120962 to produce a single 'thief A0101 page 5 / a total of 18 pages 1012031117-0 M442581 through the light-emitting chip and lead frame, it can produce good electrostatic protection effect 00 [0018] Moreover, this The created ESD protection component uses a voltage or current that is like the "lightning rod j to guide the electrostatic discharge. It is not the use of a Zener diode or a Schottky diode in the prior art to achieve a static electricity like a "fuse". Protective effect, once the Zener diode or the Xiaoji diode is burned by excessive voltage or current of electrostatic discharge Bad, no longer has the effect of static electricity protection. In contrast, the static protection components of this creation can be reused and burned without being electrostatically discharged. [0019] On the other hand, the electrostatic protection element of the present invention is made of a conductive metal in a stamping and bending manner, which is inexpensive, and is relatively simple to manufacture and easy to manufacture in large quantities. [Embodiment] [0020] The detailed description and technical contents of the present invention will be described below with reference to the drawings, but the drawings are for illustrative purposes only and are not intended to limit the present invention. [0021] Please refer to the first to sixth figures. The present invention provides a light-emitting diode 1 (hereinafter referred to as "light-emitting diode 1") having an electrostatic protection mechanism, which includes: a lead frame 10, a The light emitting chip 20, the at least one static electricity protection component 30, and a package body 40. [0022] As shown in the first figure, the lead frame 10 is formed by stamping and bending of a conductive metal and has a plurality of conductive pins 11, each of which is a mounting section 111 extending from the mounting section 111. The bending section 112 and a pin section 113 connecting the bending section 112 and away from the mounting section 111 are formed. Installation section ΗΠ丽# Single ship deletion 1 Page 6 / 18 pages 1012031117-0 M442581 111 is used for mounting the illuminating chip 20, and the bending section 112 is used for bending and connecting to the mounting section 111 and the pin section 113. The pin segment 113 is electrically connected to a circuit board (not shown), whereby the illuminating wafer 20 can obtain power required for illuminating from the circuit board. [0023] The light-emitting chip 20 is mounted on the lead frame 10 and electrically connected to the conductive pins 11. If the single-color light-emitting chip 20 has only one crystal grain, if it is a multi-color hybrid light-emitting chip 20 It has multiple grains. As shown in the second figure, in the present creation, the light-emitting chip 20 has three crystal grains 21, 22, and 23 of red (R), green (G), and blue (B), which are respectively installed in three different On the mounting section 111 of the conductive pin 11; then, the plurality of leads 24, 25, 26 electrically solder the die 21, 22, 23 and the different conductive pins 11 to each other to achieve the light-emitting chip 20 and the wire Electrical welding of the conductive pins 11 of the frame 10. As can be seen from the top view of the third figure, each of the conductive pins 11 of the lead frame 10 are not in contact with each other, but are electrically connected to a circuit board (not shown) at the bottom of the lead frame 10, respectively, to form different ones. Feet. [0024] It should be particularly noted that each of the crystal grains 21, 22, 23 of the light-emitting chip 20 together produces a light-emitting region Z (eighth image) on the lead frame 10, and the length, width and depth of the light-emitting region Z are based on The light exit angles of the crystal grains 21, 22, and 23 are different. As shown in the eighth figure, the light exiting region Z is not encapsulated in the subsequent packaging operation, but a light transmission is disposed above the light exiting region Z. The light-emitting cover 50 made of the material is flush with the surface of the package body 40, thereby protecting the light-emitting chip 20 while having the maximum light-emitting efficiency. [0025] In the embodiment of the present invention, a pair of electrostatic protection elements 30 are provided, which are respectively disposed near the light exiting zone Z and are opposite to the left and right sides of the lead frame 10 by the two conductive 10120962. 18 pages 1012031117-0 M442581 The pins 11 are electrically isolated (as shown in the third figure). It should be particularly noted that each of the static protection elements 30 is formed by bending and forming a conductive metal, and is composed of a main body portion 31, a bent portion 32 extending from the main body portion 31, a pin portion 33 connecting the bent portion 32 away from the main body portion 31, and a bent end extending from the other end of the main body portion 31 away from the bent portion A static receiving portion 34 of 32. The main body portion 31 is substantially flush with the mounting portion 111 of the adjacent conductive pin 11, and the bending angle, length and height of the bent portion 32 substantially correspond to the bending of the adjacent conductive pin 11. The length and thickness of the pin portion 33 substantially correspond to the pin segment 113 of the adjacent conductive pin 11 , whereby the pin portion 33 of each ESD protection member 30 and the conductive pin of the lead frame 10 can be disposed. The pin segment 113 of the 11 is electrically connected to a circuit board (not shown). [0026] Package 40 is used to package the bonding lead frame 10 and the static electricity protection component 30, so that the separate conductive pins 11 of the lead frame 10 can be combined with the two static electricity protection components 30 to form a light emitting diode 1. Specifically, A portion of the ESD protection component 30 (here, the electrostatic receiving portion 34) protrudes out of the package body 40. The electrostatic receiving portion 34 protruding from the upper surface of the package body 40 is used to absorb the light-emitting diode 1 In order to improve the electrostatic protection effect, each of the electrostatic receiving portions 34 may extend out of a branch portion 35, which is also disposed in the vicinity of the light exiting region Z and perpendicular to the electrostatic receiving portion 34, the length thereof. According to the configuration, the two electrostatic receiving portions 34 and the branching portions 35 of the static electricity protection component 30 are symmetrically disposed on both sides of the lead frame 10, and the light emitting chip 20 disposed in the light exiting region Z is preferably provided. The electrostatic protection effect.
[0028] 從第九圖可以看出，每一靜電防護元件30具有大致S形或 倒S形的結構，當然，也可以將靜電防護元件30設置成C 10120962#單编號删1 第8頁/共18頁 1012031117-0 M442581 形或其他形狀。為了使靜電防護元件30的靜電接收部34 之前端能夠充分接觸封裝體40而不要翹曲，所以，實際 製作時，靜電接收部34的前端可以彎折抵接封裝體40的 上表面而使靜電接收部34的其餘部分與封裝體40之間產 生一間隙。 [0029] 綜上所述，當知本創作之「具靜電防護機制的發光二極 體j已具有產業利用性、新穎性與進步性，又本創作之 構造亦未曾見於同類產品及公開使用，完全符合新型專 利申請要件，爰依專利法提出申請。 [0030] 惟以上所述僅為本創作之較佳可行實施例，非因此即拘 限本創作之專利範圍，故舉凡運用本創作說明書及圖式 内容所為之等效結構變化，均同理皆包含於本創作之範 圍内，合予陳明。 【圖式簡單說明】 [0031] 第一圖係本創作的導線架及靜電防護元件之立體圖。 [0032] 第二圖係本創作的導線架、發光晶片及靜電防護元件之 <? 立體圖。 [0033] 第三圖係第二圖之俯視圖。 [0034] 第四圖係本創作的導線架、發光晶片、靜電防護元件及 封裝體之立體透視圖。 [0035] 第五圖係本創作的發光二極體之另一立體透視圖。 [0036] 第六圖係本創作的發光二極體從另一視角看來之立體透 視圖。 10120962(^^-^^ A〇101 第9頁/共18頁 1012031117-0 M442581 [0037] 第七圖係本創作的發光二極體之俯視圖。 [0038] 第八圖係沿著第七圖的直線8-8所作之側視剖面圖。 [0039] 第九圖係沿著第七圖的直線9-9所作之側視刟面圖。 [0040] 【主要元件符號說明】 1發光二極體 [0041] 10導線架 [0042] 11導電接腳 [0043] 111安裝段 [0044] 112彎折段 [0045] 113接腳段 [0046] 20發光晶片 [0047] 21、22、23 晶粒 [0048] 24、25、26 引線 [0049] 〇 30靜電防護元件 [0050] 31主體部 [0051] 32彎折部 [0052] 3 3接腳部 [0053] 34靜電接收部 [0054] 35分支部 [0055] 40封裝體 10120962产單编號 Αί)1()1 g 10 頁 / 共 18 頁 1012031117-0 M442581 [0056] 50出光罩 [0057] Z出光區 10120962(f·單編號 A〇101 第11頁/共18頁 1012031117-0[0028] As can be seen from the ninth figure, each of the static electricity protection elements 30 has a substantially S-shaped or inverted S-shaped structure. Of course, the static electricity protection element 30 can also be set as C 10120962# single number deletion 1 page 8 / Total 18 pages 1012031117-0 M442581 Shape or other shape. In order to allow the front end of the electrostatic receiving portion 34 of the ESD protection member 30 to sufficiently contact the package body 40 without warping, the front end of the electrostatic receiving portion 34 can be bent to abut against the upper surface of the package body 40 to cause static electricity. A gap is created between the remainder of the receiving portion 34 and the package 40. [0029] In summary, when the "light-emitting diodes with electrostatic protection mechanism" of Zhiben's creation have industrial applicability, novelty and progressiveness, the structure of the creation has not been seen in similar products and is used publicly. It is in full compliance with the requirements of the new patent application, and the application is filed in accordance with the Patent Law. [0030] However, the above description is only a preferred and feasible embodiment of the present invention, and thus the patent scope of the creation is not limited thereby. The equivalent structural changes of the content of the schema are all included in the scope of this creation, and are combined with Chen Ming. [Simple description of the diagram] [0031] The first diagram is the lead frame and electrostatic protection component of the creation. [0032] The second figure is a perspective view of the lead frame, the light-emitting chip, and the static electricity protection element of the present invention. [0033] The third figure is a top view of the second figure. [0034] The fourth figure is the creation of the present figure. A perspective view of a lead frame, a light-emitting chip, an electrostatic protection element, and a package. [0035] The fifth figure is another perspective view of the light-emitting diode of the present invention. [0036] The sixth picture is the light-emitting second of the present creation. Polar body A perspective view from another perspective. 10120962(^^-^^ A〇101 Page 9/18 pages 1012031117-0 M442581 [0037] The seventh figure is a top view of the light-emitting diode of the present invention. The eighth figure is a side cross-sectional view taken along line 8-8 of the seventh figure. [0039] The ninth drawing is a side view of the line taken along line 9-9 of the seventh figure. [0040] ] [Main component symbol description] 1 light-emitting diode [0041] 10 lead frame [0042] 11 conductive pin [0043] 111 mounting section [0044] 112 bending section [0045] 113 pin section [0046] 20 lighting Wafer [0047] 21, 22, 23 die [0048] 24, 25, 26 lead [0049] 〇 30 electrostatic protection element [0050] 31 main body [0051] 32 bent portion [0052] 3 3 pin portion [ 0053] 34 Electrostatic Receiver [0054] 35 Branch [0055] 40 Package 10120962 Production Order No. Αί) 1 () 1 g 10 Page / Total 18 Page 1012031117-0 M442581 [0056] 50 Shield [0057] Z Light exit area 10120962 (f·single number A〇101 page 11/total 18 pages 1012031117-0