TWM433634U - Semiconductor substrate - Google Patents

Semiconductor substrate

Info

Publication number
TWM433634U
TWM433634U TW101205295U TW101205295U TWM433634U TW M433634 U TWM433634 U TW M433634U TW 101205295 U TW101205295 U TW 101205295U TW 101205295 U TW101205295 U TW 101205295U TW M433634 U TWM433634 U TW M433634U
Authority
TW
Taiwan
Prior art keywords
semiconductor substrate
external connecting
conductive
slanting
overcoming
Prior art date
Application number
TW101205295U
Other languages
English (en)
Inventor
Dyi-Chung Hu
Ying-Chih Chan
Jiun-Ting Lin
Original Assignee
Unimicron Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Unimicron Technology Corp filed Critical Unimicron Technology Corp
Priority to TW101205295U priority Critical patent/TWM433634U/zh
Publication of TWM433634U publication Critical patent/TWM433634U/zh
Priority to US13/753,906 priority patent/US20130249083A1/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H01L23/49816Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49822Multilayer substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49827Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Photovoltaic Devices (AREA)
TW101205295U 2012-03-23 2012-03-23 Semiconductor substrate TWM433634U (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW101205295U TWM433634U (en) 2012-03-23 2012-03-23 Semiconductor substrate
US13/753,906 US20130249083A1 (en) 2012-03-23 2013-01-30 Packaging substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW101205295U TWM433634U (en) 2012-03-23 2012-03-23 Semiconductor substrate

Publications (1)

Publication Number Publication Date
TWM433634U true TWM433634U (en) 2012-07-11

Family

ID=49211036

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101205295U TWM433634U (en) 2012-03-23 2012-03-23 Semiconductor substrate

Country Status (2)

Country Link
US (1) US20130249083A1 (zh)
TW (1) TWM433634U (zh)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI483365B (zh) * 2012-09-26 2015-05-01 財團法人工業技術研究院 封裝基板及其製法
TWI487436B (zh) * 2013-05-10 2015-06-01 欣興電子股份有限公司 承載基板及其製作方法
TWI552290B (zh) * 2014-04-22 2016-10-01 矽品精密工業股份有限公司 封裝基板及其製法
TWI569365B (zh) * 2014-09-30 2017-02-01 欣興電子股份有限公司 封裝基板與其製造方法
US9780022B2 (en) 2015-07-15 2017-10-03 Phoenix Pioneer Technology Co., Ltd. Substrate structure
TWI616981B (zh) * 2015-07-15 2018-03-01 恆勁科技股份有限公司 基板結構
TWI620274B (zh) * 2015-07-15 2018-04-01 恆勁科技股份有限公司 基板結構之製作方法
US10354969B2 (en) 2017-07-31 2019-07-16 Advanced Semiconductor Engineering, Inc. Substrate structure, semiconductor package including the same, and method for manufacturing the same

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015162660A (ja) * 2014-02-28 2015-09-07 イビデン株式会社 プリント配線板、プリント配線板の製造方法、パッケージ−オン−パッケージ
US10332757B2 (en) * 2017-11-28 2019-06-25 Advanced Semiconductor Engineering, Inc. Semiconductor device package having a multi-portion connection element
CN112885806B (zh) * 2019-11-29 2022-03-08 长鑫存储技术有限公司 基板及其制备方法、芯片封装结构及其封装方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100861619B1 (ko) * 2007-05-07 2008-10-07 삼성전기주식회사 방열 인쇄회로기판 및 그 제조방법
SG148054A1 (en) * 2007-05-17 2008-12-31 Micron Technology Inc Semiconductor packages and method for fabricating semiconductor packages with discrete components
JP5134899B2 (ja) * 2007-09-26 2013-01-30 三洋電機株式会社 半導体モジュール、半導体モジュールの製造方法および携帯機器
US9018758B2 (en) * 2010-06-02 2015-04-28 Taiwan Semiconductor Manufacturing Company, Ltd. Cu pillar bump with non-metal sidewall spacer and metal top cap
US8653658B2 (en) * 2011-11-30 2014-02-18 Taiwan Semiconductor Manufacturing Company, Ltd. Planarized bumps for underfill control

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI483365B (zh) * 2012-09-26 2015-05-01 財團法人工業技術研究院 封裝基板及其製法
TWI487436B (zh) * 2013-05-10 2015-06-01 欣興電子股份有限公司 承載基板及其製作方法
US9661761B2 (en) 2013-05-10 2017-05-23 Unimicron Technology Corp. Carrier substrate and manufacturing method thereof
TWI552290B (zh) * 2014-04-22 2016-10-01 矽品精密工業股份有限公司 封裝基板及其製法
TWI569365B (zh) * 2014-09-30 2017-02-01 欣興電子股份有限公司 封裝基板與其製造方法
US9780022B2 (en) 2015-07-15 2017-10-03 Phoenix Pioneer Technology Co., Ltd. Substrate structure
TWI616981B (zh) * 2015-07-15 2018-03-01 恆勁科技股份有限公司 基板結構
TWI620274B (zh) * 2015-07-15 2018-04-01 恆勁科技股份有限公司 基板結構之製作方法
US10354969B2 (en) 2017-07-31 2019-07-16 Advanced Semiconductor Engineering, Inc. Substrate structure, semiconductor package including the same, and method for manufacturing the same

Also Published As

Publication number Publication date
US20130249083A1 (en) 2013-09-26

Similar Documents

Publication Publication Date Title
TWM433634U (en) Semiconductor substrate
WO2012127245A3 (en) Structures and methods relating to graphene
TW201613116A (en) Perovskite solar cell
GB2501019B (en) A multi-chip package having a substrate with a plurality of vertically-embedded die and process of forming the same
TW201613040A (en) Integration of embedded thin film capacitors in package substrates
EP2819169A3 (en) Semiconductor device
WO2012028279A9 (en) Gate insulator layer for electronic devices
EP3170200A4 (en) Methods of manufacturing stacked semiconductor die assemblies with high efficiency thermal paths
WO2014112954A8 (en) Substrate for semiconductor packaging and method of forming same
WO2013019064A3 (ko) 에피택셜 공정을 위한 반도체 제조설비
TW201613098A (en) Semiconductor device
MX390737B (es) Estructura de sustrato y metodo para su preparacion.
WO2014004012A3 (en) High voltage three-dimensional devices having dielectric liners
TW201614783A (en) Power module
WO2013019021A3 (ko) 도펀트 포함 그래핀 적층체 및 그 제조방법
MX355663B (es) Material para caja de cartón, preforma, o sustrato.
TW201611999A (en) Pre-applied underfill
GB2526464A (en) Methods of forming buried microelectricomechanical structures coupled with device substrates and structures formed thereby
WO2017070283A3 (en) Asymmetric glass laminates exhibiting improved damage tolerance
PL2681313T3 (pl) Komórka drożdżowa do wytwarzania terpenów i jej zastosowania
WO2013066533A3 (en) Strain isolation layer assemblies and methods
HK1213692A1 (zh) 用於cigs光伏器件的钼基材
BR112018010387A2 (pt) levedura geneticamente modificada e processo para fabricar etanol
WO2014070888A8 (en) Organic conductive materials and devices
WO2014044871A3 (fr) Cellule photovoltaique a heterojonction et procede de fabrication d'une telle cellule

Legal Events

Date Code Title Description
MM4K Annulment or lapse of a utility model due to non-payment of fees