M357020 八、新型說明： 【新型所屬之技術領域】 圓的晶圓電鍍 本創作係有關-種晶圓電链夾具，特別綠—種真空定位晶 夾具 •【先前技術】 :—般細電麟™續於—均壓板與—«具有圓賴口的晶圓承座 .之間料馳為-個-體成型且具有數個向内延伸之彈性電極包覆橡膠材質 之〇型環’以在晶圓受到均壓板 » 時’ 電極能與晶®鱗表面上的導電 層接觸，且晶圓能夠緊密貼合於〇型環上，以防止電鍵液渗入電極。但，這樣 7計下，雜發生财時，就必鞭換整個電極環，造成成本上的不必要浪 費’此外’先前技術無法於電料檢知〇型環是否完全與晶圓密合，必鮮現 日咖邮鄕简程增輸及瓣產品糧損 羞内的導電Γ彈性電極與晶圓的電性連接方式是水平式接觸晶圓周圍的2公 卢是m 她爾敝彻_邊緣的厚 J度疋相4的’且品質也相當不—致，易有贼。此外 將會對晶圓造成码勻的應力與位移，而造顧。 n 有鑑於此’本創作遂針對上述習知技術之缺失 夾具，以有效克服上述之該等問題。 ㈣種薪新的晶圓電鑛 【新型内容】 本創作之主要目的在提供一種 二彈性電接㈣射嶋心妨幅觸元件與第 電極更換時需整個電極相關組件一起更換的成本花費。11可以大幅度降低習知 M357020 本創作之另-目的在提供-種晶圓電鑛夾具，其第二彈性電接觸元件與晶 圓上之導電層是採正面垂直接觸晶圓導電鍍膜層，因此能夠避免像習知技術所 採的水平接觸晶圓側邊時’不均勻電鍍層所可能引起的導電不良，造成電錄品 質不良。 又口口 本創作之再-目的在提供-種晶圓電錄炎具，其利用真空吸附的固定方 :式’因只需鮮的壓力測’不易造成晶圓變形或破損，此外，本創作於治具 中加入真空檢知褒置能於產品進行電鍍之前確認彈性密封元件與晶圓完全密 籲合，使電链過程中不會發生電錢液渗漏造成良率不佳問題，利於機械化自触 產，簡化整個製程步驟。 為達上述之目的，本創作提供一種晶圓電鍍夾具，其包含有-晶圓承載座 與-覆蓋於晶圓轉座上的上蓋。其中晶圓轉座包含有：1以承載一晶圓 的晶圓承載區；一環設於晶圓承载區周圍的真空區；一設於真空區上且鄰接晶 圓承載區周賴導電環；以及—連通至真空區的真空氣閥M。而上蓋包含有： -對應於晶圓承載剛师，其酬小於晶_直徑；—裝設於上蓋底 • 料電組°此導電組合包含有：一嵌設於上蓋底面的環狀導電基座；數 個第一雜電接觸元件與第二電_元件，其係裝設於環狀導電基座上， 且第-彈輯躺元件與導電财接；第二·電賴元件與晶隱觸。導電 環、第-彈性電接觸耕、環狀導電基座、第二彈性電接觸元件形成一導電通 路而真工孔閥裝置將上盍與其所覆蓋的晶圓承載座間區域形成真空狀態，以 -爽持晶圓。 茲為使 解與認識，謹 貴審查委員對本創作之結構特徵及所達成之功效更有進一步之瞭 佐以較佳之實施細及配合詳細之，說明如後： 6 M357020 【實施方式】 首先’請-併參閱第1圖〜第4圖，其係各為本創作之晶圓麵夾具的立 體示意圖、晶圓承載座的元件分解示意圖、上蓋的剖視示意圖與上蓋的導電組 合的局部放大示意圖。如圖所示，本創作之晶圓電鍍失具1〇主要包含有一曰圓 承触12與一置於晶圓承載座12上的上蓋14。晶圓轉座12主要包含有一晶 _圓承載區16、-環設於晶圓承載區周圍的真空區18與―連通至真空區μ的真 -空氣閥裝置20。晶圓承載區16周緣設置有一彈性密封元件㈡，例如X型塾圈， 鲁以提供放置於晶圓承載區16上之晶圓（圖中未示）適當的承載緩衝力。真空區 18上鄰近晶圓承載區16周圍環設有—導電環24，真空㈣的外周圍設置有一 第-彈性密封元件26，例如〇型塾圈，以增加後續真空狀態時的氣密性。真空 區18上設置有數個與真空氣閱裝置2〇連通的通孔28，以利於真空氣闊裝置： 對真空區18進行抽真空或者排氣。 此外’為便於將晶圓適當定位，於彈性密封元件22外周緣形 緣30。 鲁一中間具有圓形開π 32的上蓋14，其係設置於晶圓承載座π上，並完全 f區18與部分晶圓承载區16，且_心的直徑小於晶圓的直徑， 从顯路出部分晶圓。圓形開口 32的周圍嗖置有一第 .型墊圈。 W周圍B又置彳第一彈性密封元件34,例如〇 上蓋14底面設置有一導電叙合％，如第4圖所示，其包含 14底面的環狀導電基座38 ;兩 ° '氳 電接觸元件40與數個第二·带又於衣狀導電基座⑽内的數個第-彈性 第一彈丨生電接觸元件42，宜伟可以為^ β 置於晶圓承載座16時’第一彈性恤 』了以為探針，當上蓋Η設 彈性電接觸元件40將與導電環24垂直接觸，而第 7 M357020 二彈性電接觸元件42將垂直接觸於晶 圓上的導電層（於圖中未示），導電環24、 第-彈性電接觸元件4〇、環狀導電基座38、第二彈性電接觸元件形成導電 通路。 此外，因本創作係應用於化學電鍍過程，因此晶圓承載座與上蓋的材質均 採ί-文驗腐钮材料。且本創作是使用彈性電接觸元件來作為電極，因此可視需 求調整雜電_元件的晶圓表面導電糾的應力。 «月參閱第5 (a)〜5⑻圖，其係本創作之晶圓電鍵夾具進行電鑛的示意圖。 藝如圖所示將曰曰圓44置放於晶圓承載區16，並將上蓋Μ放置於晶圓承載具 12上此日守因為上蓋14的圓形開口犯直徑小於晶圓乜直徑，因此晶圓44 的周圍Μ將被上蓋14覆蓋著。接續，藉由真空氣閥裝置加透過通孔沈對上 蓋真玉區18彈性也、封元件22、第一 〇_彈性密封元件26與第二〇_彈性 密封兀件34間空間的抽成真空，以將上蓋14 真空吸附於晶圓承載座η 上。此時’第-彈性電接觸元件4〇與導電環24垂直接觸，而第二彈性電接觸 元件42將垂直接觸於晶圓44上的導電層（於圖中未示），以形成一導電通路。 •隨後，即可將失持有晶圓44之晶圓電鍍夾具10浸入電艘液中，並將導電環24 連接上電源的負極，以進行電鍍。 待賴70祕’自轿絲岐持有―44的魏電做錢，解除電源 的導通狀態’利用真空氣閥袭置2〇解除上蓋Μ、真空區Μ、彈性密封元件^ 與第第一 0彈性從封元件26、34間空間的真空狀態後，即可將上蓋14與 晶圓承載座12分離，以取把電奴·晶圓44。 ，、 此外為便於I控真空狀態，請參閱第i與第2圖，係於晶圓承載具I?上 裝。又與真工區18連通的真空檢知裝置46，以利於監控真空氣壓。上蓋Μ上 8 M357020 更形成有-定位孔48，晶圓承载座12上形成有一與定位孔48匹配的定位凸塊 50，以利於上蓋14與晶圓承_ 12間的定位設定。 本創作之導電組合上的第—彈性電接觸元件與第二彈性電接觸树係可視 損害狀態，進行_紐，因此可以大幅餅制知的電贼換醜本花費。 更者’摘作之第二·電接觸元件與純上之導電層是麵直接觸，因此能 夠避免像習知技術所採的水平較大面積接觸時，晶圓上之不均勻電所可能 引起的導電不良，造成電鍍品質不良。 • 此外’本創作利用真空方式將上蓋與晶圓承載座固定的方式，將可以避免 習知技術觀均壓板所可能產生的日日日_壓變形或者破裂的情況。此外，本創 ^於:具中加人真空檢知裝置能於產品進行電鍍之前確認彈性密封元件與晶圓 元全密合，使讀過程中不會發生紐液渗漏造献率不佳問題，利於機械化 自動生產，簡化整個製程步驟。 唯以上所述者’僅為本創作之較佳實施例而已，並非用來限定本創作實施 之範圍。故即驗梢料請翻之舰域_為之鱗變化或修飾， 鲁均應包括於本創作之申請專利範圍内。 【圖式簡單說明】 第1圖係為本創作之晶圓電鍍夾具的立體示意圖。 第2圖係為本創作之晶圓承載座的元件分解示意圖。 .第3圖係為本創作之上蓋的剖視示意圖。 第4圖係為本創作之上蓋的導電組合的局部放大示意圖。 第5 (a)〜5 (b)圖，其係本創作之晶圓電鍍夾具夾持晶圓進行電鍍的示意圖。 【主要元件符號說明】 9 M357020 ίο晶圓電鍍夾具 12晶圓承載座 14上蓋 16晶圓承載區 18真空區 20真空氣閥裝置 .22彈性密封元件 24導電環 » 26第一彈性密封元件 28通孔 30定位凸緣 32圓形開口 34第二彈性密封元件 36導電組合 I 38環狀導電基座 40第一彈性電接觸元件 42第二彈性電接觸元件 ‘ 44晶圓 .46真空檢知裝置 -48定位孔 50定位凸塊M357020 VIII. New Description: [New Technology Field] Round Wafer Plating This creation is related to a kind of wafer electric chain fixture, especially green-vacuum positioning crystal fixture. [Prior Art]: -Baby Electric Lin TM Continued—the pressure equalization plate and—the wafer holder with a round rim. The material is a body-shaped and has several inwardly extending elastic electrodes coated with a rubber material. When the circle is subjected to the pressure equalization plate», the electrode can be in contact with the conductive layer on the surface of the crystal scale, and the wafer can be closely attached to the crucible ring to prevent the electrophoretic liquid from penetrating into the electrode. However, in this case, when the miscellaneous money occurs, the entire electrode ring will be replaced, resulting in unnecessary waste of cost. 'In addition, the prior art cannot detect whether the 〇-ring is completely in close contact with the wafer. The current electrical connection between the conductive Γ elastic electrode and the wafer is the horizontal contact between the 2 mils of the wafer and the edge of the glaze. Thick J degree 疋 phase 4 'and the quality is not quite - caused, easy to have thieves. In addition, it will cause a uniform stress and displacement on the wafer. n In view of this, the present invention is directed to the missing fixtures of the above-mentioned prior art to effectively overcome the above problems. (IV) New Wafer Electric Mines [New Content] The main purpose of this creation is to provide a cost of two elastic electrical connection (four) 嶋 嶋 触 触 触 与 与 与 与 与 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 11 can greatly reduce the conventional M357020. The purpose of this creation is to provide a kind of wafer electro-metal fixture, the second elastic electrical contact element and the conductive layer on the wafer are perpendicular to the wafer conductive coating layer. It is possible to avoid the poor conductivity caused by the uneven plating layer when the horizontal level of the wafer is touched by the conventional technology, resulting in poor quality of the electrographic recording. And the purpose of this mouth--the purpose of providing a kind of wafer ejector, which uses the vacuum adsorption fixed side: the type 'because of fresh pressure measurement' is not easy to cause wafer deformation or damage, in addition, this creation Adding a vacuum detection device to the fixture can confirm that the elastic sealing element is completely in close contact with the wafer before the product is electroplated, so that the leakage of the liquid money does not occur during the electric chain process, resulting in poor yield, which is conducive to mechanization. Self-touch production, simplifying the entire process steps. To achieve the above objectives, the present invention provides a wafer plating jig comprising a wafer carrier and an upper cover overlying the wafer rotator. The wafer transposition comprises: a wafer carrying area for carrying a wafer; a vacuum region disposed around the wafer carrying area; and a conductive ring disposed on the vacuum area adjacent to the wafer carrying area; - Vacuum valve M connected to the vacuum zone. The upper cover comprises: - corresponding to the wafer carrier, the compensation is less than the crystal_diameter; - is installed in the upper cover and the bottom electricity group. The conductive combination comprises: an annular conductive base embedded in the bottom surface of the upper cover a plurality of first electrical contact elements and a second electrical component, which are mounted on the annular conductive base, and the first-elastic component is electrically conductive; the second electrical component and the crystal contact . The conductive ring, the first-elastic electrical contact cultivating, the annular conductive pedestal, and the second elastic electrical contact element form a conductive path, and the real-hole valve device forms a vacuum state between the upper cymbal and the wafer carrier seat covered by the upper cymbal, to Cool holding wafers. For the purpose of understanding and understanding, I would like to ask the reviewer for the structural features and the efficacies of the creation. The details of the implementation are better and the details are as follows: 6 M357020 [Implementation] First of all, please - Referring to FIG. 1 to FIG. 4, which are schematic perspective views of the wafer face fixture of the present invention, an exploded view of the component of the wafer carrier, a schematic cross-sectional view of the upper cover, and a partially enlarged schematic view of the conductive combination of the upper cover. As shown, the wafer flip-on 1 of the present invention mainly comprises a circular contact 12 and an upper cover 14 disposed on the wafer carrier 12. The wafer turret 12 mainly comprises a crystal-circle bearing region 16, a vacuum region 18 disposed around the wafer carrying region, and a true-air valve device 20 connected to the vacuum region μ. The periphery of the wafer carrying area 16 is provided with an elastic sealing element (2), such as an X-shaped coil, to provide a suitable load-carrying force for the wafer (not shown) placed on the wafer carrying area 16. A vacuum ring 18 is disposed adjacent to the periphery of the wafer carrying area 16 and has a conductive ring 24. The outer periphery of the vacuum (4) is provided with a first elastic sealing member 26, such as a 塾-shaped ring, to increase the airtightness in the subsequent vacuum state. The vacuum zone 18 is provided with a plurality of through holes 28 communicating with the vacuum gas reading device 2 to facilitate the vacuum gas venting device: vacuuming or venting the vacuum zone 18. In addition, the outer peripheral edge 30 of the elastomeric sealing member 22 is adapted to facilitate proper positioning of the wafer. Luyi has a circular opening π 32 in the middle, which is disposed on the wafer carrier π, and completely f region 18 and a portion of the wafer bearing region 16, and the diameter of the _ heart is smaller than the diameter of the wafer, A part of the wafer is taken out. A first type of gasket is disposed around the circular opening 32. The periphery B of the W is further disposed with the first elastic sealing member 34. For example, the bottom surface of the upper cover 14 is provided with a conductive recombination %. As shown in FIG. 4, it includes an annular conductive base 38 of the bottom surface of the 14; The element 40 and the plurality of second-and-elastic first elastic-elastic electrical contact elements 42 in the garment-like conductive base (10) can be placed on the wafer carrier 16 A flexible shirt is considered to be a probe. When the upper cover is provided, the elastic electrical contact element 40 will be in vertical contact with the conductive ring 24, and the 7th M357020 second elastic electrical contact element 42 will be in vertical contact with the conductive layer on the wafer (in the figure). Not shown), the conductive ring 24, the first-elastic electrical contact element 4, the annular conductive base 38, and the second elastic electrical contact element form a conductive path. In addition, since the creation is applied to the electroplating process, the material of the wafer carrier and the upper cover are both 采- the text of the corrosion button material. Moreover, the present invention uses an elastic electrical contact element as an electrode, so that it is possible to adjust the stress of the surface resistance of the wafer surface of the component. «Monthly refer to Figure 5 (a) ~ 5 (8), which is a schematic diagram of the electric charge of the wafer key fixture of this creation. The image is placed on the wafer carrying area 16 as shown in the figure, and the upper cover is placed on the wafer carrier 12. The diameter of the circular opening of the upper cover 14 is smaller than the diameter of the wafer. The surrounding turns of the wafer 44 will be covered by the upper cover 14. Then, by vacuum valve device and through the through hole, the vacuum of the upper cover true jade region 18, the sealing member 22, the first 〇_elastic sealing member 26 and the second 〇_elastic sealing member 34 are vacuumed. The upper cover 14 is vacuum-adsorbed onto the wafer carrier η. At this time, the 'first elastic electrical contact element 4' is in vertical contact with the conductive ring 24, and the second elastic electrical contact element 42 will be in vertical contact with the conductive layer on the wafer 44 (not shown) to form a conductive path. . • Subsequently, the wafer plating jig 10 of the wafer 44 can be immersed in the battery liquid, and the conductive ring 24 is connected to the negative electrode of the power source for electroplating. Waiting for the 70 secret 'self-made from the car 岐 ― 44 44 44 44 44 44 44 44 44 44 44 44 44 44 44 44 44 44 44 44 44 44 44 44 44 44 44 44 44 44 44 44 44 44 44 44 44 44 44 44 44 44 44 44 44 44 44 44 44 44 44 44 44 44 44 44 44 44 44 44 44 44 44 44 44 44 44 After the elastic state of the vacuum between the sealing elements 26, 34, the upper cover 14 and the wafer carrier 12 can be separated to take the electric slave wafer 44. In addition, in order to facilitate the I-controlled vacuum state, please refer to the i and 2 drawings, which are attached to the wafer carrier I. A vacuum detecting device 46 is also connected to the real working area 18 to facilitate monitoring of the vacuum pressure. The top cover 8 8 M357020 is further formed with a positioning hole 48. The wafer carrier 12 is formed with a positioning protrusion 50 matching the positioning hole 48 to facilitate the positioning setting between the upper cover 14 and the wafer carrier -12. The first elastic electrical contact element and the second elastic electrical contact tree on the conductive combination of the present invention can be visually damaged, and the thief can be made to change the ugly cost. Moreover, the second electrical contact element is in direct contact with the pure conductive layer, so that it is possible to avoid uneven current on the wafer when contact with a large horizontal area as in the prior art. Poor electrical conductivity, resulting in poor plating quality. • In addition, this design uses a vacuum method to fix the upper cover to the wafer carrier, which will avoid the day-to-day deformation or cracking that may occur in the conventional technology. In addition, this creation is: The vacuum detection device with the China-Canada can confirm that the elastic sealing element is fully adhered to the wafer element before the product is electroplated, so that the leakage rate of the new liquid leakage does not occur during the reading process. It facilitates mechanized automatic production and simplifies the entire process steps. The above description is only a preferred embodiment of the present invention and is not intended to limit the scope of the present invention. Therefore, the inspection of the material should be turned over to the shipyard _ for the change or modification of the scale, Lu Jun should be included in the scope of the patent application of this creation. [Simple description of the drawing] Fig. 1 is a perspective view of the wafer plating jig for the creation. Figure 2 is a schematic exploded view of the wafer carrier of the present invention. Figure 3 is a schematic cross-sectional view of the upper cover of the creation. Fig. 4 is a partially enlarged schematic view showing the conductive combination of the upper cover of the creation. Figure 5 (a) ~ 5 (b), which is a schematic diagram of the wafer plating jig of the present invention holding the wafer for electroplating. [Main component symbol description] 9 M357020 ίο Wafer plating fixture 12 Wafer carrier 14 Upper cover 16 Wafer bearing area 18 Vacuum zone 20 Vacuum valve device. 22 Elastomeric sealing element 24 Conductive ring » 26 First elastic sealing element 28 Hole 30 positioning flange 32 circular opening 34 second elastic sealing element 36 conductive combination I 38 annular conductive base 40 first elastic electrical contact element 42 second elastic electrical contact element '44 wafer. 46 vacuum detection device - 48 positioning hole 50 positioning bump