1290591 九、發明說明 【發明所屬之技術領域】 本發明係有關於一種電化學電鍍裝置，特別是有關於 種具有晶圓狀態偵測功能之電化學電鍵裝置。 【先前技術】 半導體製程技術，隨著摩爾定律（Moore law)不斷地推 向更高功能（High performance)、更快速率（Speed)以及更細 線化（Fine line)與更高積集度（Integrati〇n)。深次微米尺寸 特徵之金屬化是用於現今與未來世代積體電路製程_鍵 技術。更特別的是，在諸如超大尺寸積體型式裝置（即具 有包含超過百萬個邏輯閘之積體電路的裝置中 > 置於此等 裝置核心部位之多層互連線’大體上係藉由以導電材料(例 如銅或銘）填充高深寬比（例如大於4: υ之互連線特徵 而形成。習知諸如化學氣相沉積（CVD)與物理氣相沉積 (PVD)之沉積技藝業經使用於填充此等互連線特徵。然 而，隨著互連線尺寸縮小與深寬比增加，經由習知金屬： 技藝之無空洞互連特徵漸增困難，，出現諸如電化學 電鍍（ECP )與無電極電鍍之雷4v^ ^ 电溉之電鍍技藝，作為在積體電路 製程中填充深次微米尺寸之高深寬比互連特徵的可實行製 程。 在電化學電鑛製程中，例如形成於基材表面之深次微 t尺寸高深寬比的特徵中’可用導電材料（諸如幻充分 地予以填充。電化學電鍵製程大趙上包含首先沉積一晶種 1290591 層於基材表面上且進入基材的特徵内（此晶種層沉積製程 大體上係與電化學電鍍製程分開），且接著會曝露基材之表 - 面特徵於一電鍍溶液中，而一電性偏壓會同時施加至基材 • ~ 與位於電鍍溶液内之陽極間，此電鍍溶液大體上係富含待 電鍍於基材表面上之正離子，且因此電性偏壓之應用造成 此等正離子被推離電鍍溶液且電鍍於晶種層上。 請參閲第1A圖與第1B圖，係繪示習知之電化學電鑛 φ 裝置100的外觀立體圖與分解立體圖。此電化學電鍍裝置 1〇〇包含頭部單元110、電鍍液儲槽12〇、底座13〇、固定 架140、外殼150以及電源供應器（未繪示），其中頭部單 元110係用以電性接觸並支托晶圓，並且能將晶圓置入或 移出電鍍液儲槽120，以進行電鍍製程或晶圓之裝/卸栽。 電鍍液儲槽120内具有電鍍溶液與陽極，並在其上具有護 套125以防止外界環境因子污染電鍍溶液或是電鍍製程進 行時電鍍溶液的溢出，底座130係用以承載電鍍液儲槽 1/〇,固定架140係用以固定電線以防止互相碰觸磨損，^ 殼150係用以保護電線以及頭部單元11〇在運作時的機構 移動，電源供應器係用以與頭部單元11〇和陽極電性連 接。頭部單元110係包含有陰極基板支托單元u〇a與控制 陰極基板支托單元ll〇a作動之組件致動器u〇b，分別用 以電性接觸並支托晶圓以及進行晶圓之裝/卸載或將晶圓 置入或移出電鍍液儲槽12〇，以進行電化學電鍍製程。請 參閱第ic圖，係繪示第1B圖中之陰極基板支托單元u〇a 的剖面示意圖。此陰極基板支托單元u〇a包含電子連接器 1290591 111、旋轉馬達II2、傳送器113、磁鐵感測器1丨4、推板 機構Π5、波紋管座116、接觸環117以及推板118，其中 電子連接器111係用以與電源供應器電性連接；旋轉馬達 112係用以提供旋轉動力給傳送器113 ;傳送器11 3藉由此 動力來旋轉陰極基板支托單元Π 〇a之下半部的組件，例如 磁鐵感測114、推板機構115、波紋管座116、接觸環117 以及推板11 8 ;磁鐵感測器114係用以偵測推板11 8的位 置，推板機構11 5係藉由升降桿11 5 a來移動推板11 8的位 置；波紋管座116係用以傳送電流至接觸環117 ;接觸環 11 7係用以電性支托晶圓；以及推板丨丨8係用以推壓晶圓 190，以將晶圓19〇固定於接觸環U7上。 上述習知之電化學電鍍裝置100在實施電化學電錢製 程時’係先將晶圓190放置於接觸環117上，然後再利用 推板118推壓晶圓19〇，以將晶圓190固定於推板118與 接觸環117之間。由於推板118在施加壓力於晶圓時，可 能會因為晶圓190裝載於接觸環117上的位置不正確，導 致會有晶圓190破片或缺損的情形發生，或者是晶圓ι9〇 在載入至接觸環117時，晶圓190本身就已存在有裂縫或 缺損等缺陷，在上述情況發生時，由於晶圓19〇已經有缺 陷產生，此時若繼續進行電化學電鍍製程，只會造成製造 時間的浪費與成本的增加，並且降低生產的良率。另外， 即使晶圓190本身沒有破片或缺損的情形發生，但是由於 晶圓190與接觸環in的接合不良，也會導致晶圓19〇電 化學電鍍的效果變差，因此電化學電鍍製程的良率也會下 1290591 降0 【發明内容】 鑒於上述之發明背景中，習知之電化學電鍍裝置在製 造過程中，由於無法㈣晶圓的狀況，容易有晶圓已經破 片缺損或是晶圓與接觸環接合不良仍繼續進行電鍍製程的 缺點，導致浪費製造的時間與成本，因此，非常^要一種 改良的電化學電鍍裝置，來解決上述的問題。 本發明的主要目的之一係在於提供一種電化學電鍍裝 置，藉由增加一偵測裝置，來針對晶圓之狀況進行檢測， 以-認晶®之狀況是否完好，如此—來，就可以解決不良 的晶圓所導致之製造時間與成本的浪費。 根據以上所述之目的，本發明提出一種電化學電鍍裝 置至少包含電鍍液储槽，用以對基板進行電化學電鑛製 程，其中電鍍液儲槽内具有電鍍溶液與陽極；陰極基板支 托單元，用以電性接觸並支托基板，並且延伸至電鍍液儲 槽中，以將基板置入於電鍍溶液中，其中陰極基板支托單 疋與基板之間形成空間；電源供應器，用以與陰極基板支 托單元和陽極電性連接；以及偵測單元，用以偵測基板之 狀況’其中價測單元係提供氣體於空間中，藉以施加氣壓 於基板上，且氣壓係至少大於一大氣壓。 本發明的另一目的係在於提供一種電化學電鍍方法， 藉由偵測晶圓之狀況，以決定是否繼續進行後續的電鍍製 程’如此就可避免晶圓與支托單元接合不良以及晶圓本身 1290591 結構不完整，所導致之製程良率的下降，因而解決了製造 之成本與時間浪費的問題。 根據以上所述之目的，本發明更提出另一種電化學電 錢方法’至少包含提供一基板，其中基板正面上至少具有 一導電層；放置基板於接觸環上，其中基板正面上之導電 層係電性接觸於接觸環；使用推板推壓基板之背面，以將 基板接合固定於接觸環上，其中推板與基板之間形成空 間，通入氣體於空間中，使空間中的氣壓達到預設氣壓值， 預設氣壓值係至少大於一大氣壓；以及偵測空間中之 軋壓疋否有變化，以決定是否進行一電鑛製程，其中當空 間中之氣壓仍維持預設氣壓值時，進行電鍍製程。 ^應用本發明之電化學電鍍裝置，係藉由一偵測單元， 來針對晶圓進行狀況偵測，以確認晶圓是否固定或接合不 良或本身結構不良，如此避免接合不良或結構不良所造成 ::鍍製程良率的下降，故可大幅降低電鍍製程所浪費的 '夺間與成本。因此，本發明與習知之電化學電鍍裝置 不僅可大幅提昇電鍍製程的良率，更可大幅降低製 造的時間與成本。 【實施方式】 與胃參閱第2圖’係綠示根據本發明之一實施例之電化 if鍵裝置之陰極基板支耗單元21G的剖面示意圖。此陰 曰板支托單元210係用以電性接觸並支托基板290,並 伸至如第1B圖中所緣示之電鑛液儲槽中，以將基板 1290591 2 9 0置入於電鍵溶液（未繪示）中。此陰極基板支托單元 210至少包含電子連接器211、旋轉馬達212、傳送器213、 • 磁鐵感測器214、推板機構215、波紋管座216、接觸環217、 • 推板2 1 8以及偵測單元260，其中電子連接器2 11係用以 與電源供應器（未繪示）電性連接；旋轉馬達2丨2係提供 旋轉動力給傳送器2 1 3，用以旋轉接觸環21 7與推板21 8 ; 傳送器213藉由此動力來旋轉陰極基板支托單元21〇之下 半部的支托組件，例如磁鐵感測器214、推板機構215、波 紋管座216、接觸環217以及推板218 ;磁鐵感測器214 係用以偵測推板2 1 8的位置；推板機構2丨5係藉由升降桿 21 5a來移動推板21 8的位置；波紋管座21 6係用以傳送電 流至接觸環217 ;接觸環217係用以電性支托晶圓29〇 ;推 板218係用以推壓晶圓290 ,以將晶圓290接合固定於接 觸環21 7上，在本實施例中，此推板2丨8之表面上係具有 側壁218a界定凹槽，並藉由側壁218a與晶圓290之背面 (非生產面）290a接觸密合，藉以在推板218與晶圓29〇 • 之間形成一空間280，且凹槽上係具有至少一氣孔21扑； 债測單元260經由氣孔218b提供氣體於空間280中，藉以 施加氣壓於晶圓290之背面290a上，且此氣壓值係至少大 於一大氣壓，此偵測單元260係用以偵測晶圓29〇之狀況， • 以確認晶圓290固定接合是否良好或晶圓29〇本身是否有 • 缺損。在本實施例中，此偵測單元260至少包含氣體源 262 °周壓閥264、氣動閥266、氣體管路268，其中氣體 源262係用以提供氣體，且氣體壓力係大於一大氣壓·，氣 1290591BACKGROUND OF THE INVENTION 1. Field of the Invention This invention relates to an electrochemical plating apparatus, and more particularly to an electrochemical keying apparatus having a wafer state detecting function. [Prior Art] Semiconductor process technology, with Moore law constantly pushing for higher performance, faster speed, and finer line and higher integration (Integrati) 〇n). The metallization of deep sub-micron features is used in today's and future generations of integrated circuit process _ key technology. More particularly, in a device such as an oversized integrated device (i.e., a device having an integrated circuit comprising more than one million logic gates > multiple interconnects placed at the core of such devices) Deposition of high aspect ratios (eg, interconnects greater than 4: υ) with conductive materials (such as copper or inscriptions). Conventional deposition techniques such as chemical vapor deposition (CVD) and physical vapor deposition (PVD) have been used. In order to fill these interconnect features. However, as the interconnect size shrinks and the aspect ratio increases, the phenomenon of void-free interconnects through conventional metal: technology is becoming more difficult, such as electrochemical plating (ECP) and Electrodeless plating 4V^ ^ Electroplating technology, as a process that can be filled with deep submicron size high aspect ratio interconnects in the integrated circuit process. In electrochemical electrowinning processes, for example, formed in the base The characteristics of the deep micro-t-size and high aspect ratio of the material surface can be fully filled with conductive materials (such as illusion. The electrochemical key-bonding process consists of first depositing a seed crystal 1290591 layer on the surface of the substrate. And entering the features of the substrate (the seed layer deposition process is substantially separate from the electrochemical plating process), and then exposing the surface-surface features of the substrate to a plating solution, while an electrical bias is simultaneously Applied to the substrate • ~ The plating solution is substantially rich in positive ions to be electroplated on the surface of the substrate, and thus the application of the electrical bias causes the positive ions to be pushed away The plating solution is electroplated on the seed layer. Referring to FIGS. 1A and 1B, an external perspective view and an exploded perspective view of a conventional electrochemical ore φ device 100 are shown. The electrochemical plating device 1 includes a head. The unit unit 110, the plating solution storage tank 12, the base 13A, the fixing frame 140, the outer casing 150 and a power supply (not shown), wherein the head unit 110 is used for electrically contacting and supporting the wafer, and can The wafer is placed in or removed from the plating solution storage tank 120 for plating process or wafer loading/unloading. The plating solution storage tank 120 has a plating solution and an anode therein, and has a sheath 125 thereon to prevent the external environment. Factor contamination plating solution or The electroplating solution overflows during the electroplating process, the base 130 is used to carry the plating solution storage tank 1/〇, and the fixing frame 140 is used to fix the wires to prevent mutual contact wear, and the case 150 is used to protect the wires and the head unit. 11〇 In the operation of the mechanism movement, the power supply is used to electrically connect with the head unit 11〇 and the anode. The head unit 110 includes a cathode substrate supporting unit u〇a and a control cathode substrate supporting unit 11 〇 a actuated component actuator u〇b for electrically contacting and supporting the wafer and loading/unloading the wafer or placing the wafer in or out of the plating solution storage tank 12 for electrochemical Electroplating process. Referring to the ic diagram, a schematic cross-sectional view of the cathode substrate supporting unit u〇a in Fig. 1B is shown. The cathode substrate supporting unit u〇a includes an electronic connector 1290591 111, a rotating motor II2, and a transfer process. The device 113, the magnet sensor 1丨4, the push plate mechanism Π5, the bellows seat 116, the contact ring 117 and the push plate 118, wherein the electronic connector 111 is used for electrically connecting with the power supply; the rotary motor 112 is used To provide rotational power to the conveyor 11 3; the transmitter 11 3 rotates the components of the lower half of the cathode substrate supporting unit Π 藉a by the power, for example, the magnet sensing 114, the push plate mechanism 115, the bellows seat 116, the contact ring 117, and the push plate 11 8; the magnet sensor 114 is used to detect the position of the push plate 118, and the push plate mechanism 11 5 moves the position of the push plate 11 by the lift rod 11 5 a; the bellows seat 116 is used to transmit current To the contact ring 117; the contact ring 11 7 is used to electrically support the wafer; and the push plate 8 is used to push the wafer 190 to fix the wafer 19 to the contact ring U7. In the above-described electrochemical electroplating apparatus 100, the wafer 190 is first placed on the contact ring 117, and then the wafer 19 is pushed by the push plate 118 to fix the wafer 190 to the wafer 190. The push plate 118 is in contact with the contact ring 117. Since the push plate 118 is applying pressure to the wafer, the position of the wafer 190 on the contact ring 117 may be incorrect, resulting in wafer 190 fragmentation or defect, or the wafer 〇9〇 When entering the contact ring 117, the wafer 190 itself has defects such as cracks or defects. When the above situation occurs, since the wafer 19 has defects, it is only caused by continuing the electrochemical plating process. Waste of manufacturing time and cost increase, and reduce production yield. In addition, even if the wafer 190 itself does not have a fragment or a defect, the poor bonding of the wafer 190 and the contact ring in, the effect of the electrochemical plating of the wafer 19 is deteriorated, so that the electrochemical plating process is good. The rate will also be lowered by 1290591. [Invention] In view of the above-mentioned invention background, in the manufacturing process of the conventional electrochemical plating apparatus, since the state of the wafer cannot be (four), it is easy to have the wafer has a fragment defect or the wafer and the contact. The poor bonding of the ring continues the disadvantages of the electroplating process, resulting in wasted manufacturing time and cost. Therefore, an improved electrochemical plating device is required to solve the above problems. One of the main objects of the present invention is to provide an electrochemical plating apparatus which can detect the condition of a wafer by adding a detecting device, and whether the condition of the crystal crystal is intact, so that it can be solved. The waste of manufacturing time and cost caused by poor wafers. According to the above object, the present invention provides an electrochemical plating apparatus comprising at least a plating solution storage tank for performing an electrochemical electric ore processing process on the substrate, wherein the plating solution storage tank has a plating solution and an anode; and the cathode substrate supporting unit For electrically contacting and supporting the substrate, and extending into the plating solution storage tank to place the substrate in the plating solution, wherein the cathode substrate supports a space between the substrate and the substrate; the power supply is used for Electrically connecting with the cathode substrate supporting unit and the anode; and detecting unit for detecting the condition of the substrate. The price measuring unit provides gas in the space, thereby applying air pressure to the substrate, and the air pressure system is at least greater than one atmosphere. . Another object of the present invention is to provide an electrochemical plating method for determining whether to continue the subsequent plating process by detecting the condition of the wafer. Thus, the poor bonding between the wafer and the support unit and the wafer itself can be avoided. 1290591 Incomplete structure, resulting in a decline in process yield, thus solving the problem of manufacturing cost and time wastage. According to the above, the present invention further provides another electrochemical money method of at least comprising providing a substrate having at least one conductive layer on the front surface of the substrate; and placing the substrate on the contact ring, wherein the conductive layer on the front surface of the substrate Electrically contacting the contact ring; pushing the back surface of the substrate with a push plate to bond and fix the substrate to the contact ring, wherein a space is formed between the push plate and the substrate, and gas is introduced into the space to make the air pressure in the space reach Set the air pressure value, the preset air pressure value is at least greater than one atmosphere; and whether there is a change in the rolling pressure in the detection space to determine whether to perform an electric ore process, wherein when the air pressure in the space still maintains the preset air pressure value, Perform the plating process. Applying the electrochemical plating device of the present invention, the detection condition of the wafer is performed by a detecting unit to confirm whether the wafer is fixed or poorly bonded or the structure is poor, so as to avoid joint failure or poor structure. :: The plating process yield is reduced, so it can greatly reduce the waste and cost of the electroplating process. Therefore, the present invention and the conventional electrochemical plating apparatus can not only greatly improve the yield of the plating process, but also greatly reduce the time and cost of manufacturing. [Embodiment] FIG. 2 is a cross-sectional view showing a cathode substrate supporting unit 21G of an electrochemical if key device according to an embodiment of the present invention. The gutter board supporting unit 210 is configured to electrically contact and support the substrate 290 and extend into the electric mineral storage tank as shown in FIG. 1B to place the substrate 1290591 2 90 in the electric key. In solution (not shown). The cathode substrate supporting unit 210 includes at least an electronic connector 211, a rotating motor 212, a conveyor 213, a magnet sensor 214, a push plate mechanism 215, a bellows seat 216, a contact ring 217, a push plate 2 18, and The detecting unit 260 is configured to electrically connect with the power supply (not shown); the rotating motor 2丨2 provides rotational power to the transmitter 2 1 3 for rotating the contact ring 21 7 And the push plate 21 8; the conveyor 213 rotates the support assembly of the lower half of the cathode substrate support unit 21 by the power, such as the magnet sensor 214, the push plate mechanism 215, the bellows seat 216, the contact ring 217 and the push plate 218; the magnet sensor 214 is used to detect the position of the push plate 2 18; the push plate mechanism 2 丨 5 is to move the position of the push plate 21 8 by the lift rod 21 5a; the bellows seat 21 The 6 series is used to transmit current to the contact ring 217; the contact ring 217 is used to electrically support the wafer 29; the push plate 218 is used to push the wafer 290 to bond and fix the wafer 290 to the contact ring 21 7 Above, in the embodiment, the surface of the push plate 2丨8 has a sidewall 218a defining a groove, and by the sidewall 2 18a is in close contact with the back surface (non-production surface) 290a of the wafer 290, thereby forming a space 280 between the push plate 218 and the wafer 29, and having at least one air hole 21 on the groove; 260 is provided in the space 280 via the air hole 218b, thereby applying air pressure to the back surface 290a of the wafer 290, and the air pressure value is at least greater than one atmosphere. The detecting unit 260 is configured to detect the condition of the wafer 29〇. • To confirm that the wafer 290 is properly bonded or that the wafer 29 is itself defective. In this embodiment, the detecting unit 260 includes at least a gas source 262 ° peripheral pressure valve 264, a pneumatic valve 266, and a gas line 268, wherein the gas source 262 is used to supply gas, and the gas pressure system is greater than one atmosphere. Gas 1290591
體管路268係設置於氣體源262與推板218之間，用以輸 送氣體經由推板218上之氣孔218b進入至空間280中，藉 以施加氣壓於晶圓290上；氣動閥266係用以控制氣體管 路268的開關；調壓閥264係用以調整氣體之壓力大小； 以及壓力計270，用以偵測空間280之氣體壓力，以確認 氣壓是否有變化。其中在氣體管路268上更至少包含設置 有旋轉接頭272，用以使部分之氣體管路268能夠隨著推 板218 —起旋轉，可以理解的是，此旋轉接頭272係具有 防漏氣的功能。此外’在本實施例中，推板2丨8上係僅具 有一氣孔21 8b，然不限於此，也可設計複數個氣孔排列分 布於推板21 8之凹槽上。而且，在本實施例中，氣體源262 所供之氣體係為乾淨乾餘之空氣（clean dry air )，然不 在此限，其他的氣體（例如氮氣）也可以使用。可以理解 的是，偵測單元260於空間280中所提供之氣體的壓力， 係小於推板218推壓固定晶圓290時所施加的壓力，如此 推板218之侧壁218a與晶圓290之背面290a才能接觸密 合以形成空間280。此外，在本實施例中係使用晶圓290 作為電化學電鍍用的基板，然不限於此，其他材質的基板 也可以使用。 本發明的特徵係在於推板2 1 8之側壁21 8a與晶圓290 之背面290a緊密接合，藉以在推板218與晶圓290之間形 成一空間280，且利用推板218之氣孔218b將空間280連 通至债測單元260之氣體管路268。因此當偵測單元260 運作時，會從氣體源262送出一大於一大氣壓（即14 7psi) 11 1290591 之乾淨且乾燥的空氣，經過調壓閥264的壓力調整至略大 於一大氣壓的壓力（例如15psi)，氣動間266開啟氣體管 路268的開關，以將氣體經由氣體管路268與氣孔21肋 輸送至推板218與晶圓290之間的空間28〇，並在空間28〇 中產生一 15pS1的氣體壓力。此時若是晶圓29〇與推板218 之側壁21 8a接合處沒有縫隙的話，則偵測單元26〇所提供 之氣體就不會從空間280浪漏出去，因此壓力計27〇所偵 測到之空間280的氣壓就不會下降，此狀況即表示晶圓29〇 =接觸環217接合良好，且晶圓29〇本身沒有破損的缺陷； 若是晶圓290與推板218之側壁2l8a接合處有縫隙或是晶 圓290本身結構有缺損的話，則偵測單元26〇所提供之氣 體就會從空間280洩漏出去，因此壓力計27〇所偵測到之 壓力就會下降，此狀況表示晶圓29〇與接觸環217接合不 良或者甚至是晶圓290本身有破片產生。可以理解的是， 此偵測單元260之組成元件的配置方式並不限於上述方 式，例如也可以將壓力計270直接設置於推板218上，並 與空間280連通，以量測空間28〇之壓力，故本發明不限 於此任何此將氣體輸送至空間2 8 0内並偵測此空間2 8 〇 之氣壓變化的偵測裝置都包含在本發明之範圍内。 請參閱第3圖，係繪示根據本發明之另一實施例之電 化學電鍍方法的流程圖。首先，提供一晶圓31〇，其中晶 圓之正面（生產面）上至少具有一晶種層。接著，放置晶 圓於接觸環上320,其中晶圓正面上的晶種層係電性接觸 於接觸環。之後，使用推板來推壓晶圓之背面（非生產面） 12 ^290591 3 3 0 ’以將晶圓接合固定於接觸環上，其中推板與晶圓之間 形成一空間。接著，通入氣體於推板與晶圓之間的空間中 34〇，以使該空間中的氣壓達到一預設氣壓值，其中預設氣 •-壓值係至少大於一大氣壓。之後，偵測該空間中之氣壓是 否有變化350，以決定是否進行電鍍製程。在本實施例中， 偵測空間中之氣壓的步驟係使用壓力計來偵測空間中之氣 壓，若是空間中之氣壓從預設氣壓值往下降時，表示晶圓 _ 有可能沒擺好以致於在晶圓與推板之間產生縫隙或是在支 托的過程中產生破片或缺損，因而導致漏氣，此時馬上發 出警告訊號360通知工作人員來檢視晶圓狀況；若是空間 中之氣壓仍維持預設氣壓值時，表示晶圓與推板之間接合 良好或是晶圓本身結構沒有缺損，因而沒有漏氣，此時二 I進行電化學電鍍製程37G。在本實施财，預設氣壓值 為15psi，然不纟此限，只要壓力大於一纟氣壓的數值都可 以當作為預設氣壓值。可以理解的是，在本實施例中除了 以圓作為電化學電鑛用的基板外，也可以使用其他材質 的基板，此外，在本實施例中晶種層的作用係如同於導電 因此，本發明之一優點就是在提供一種且有 與支托單元是否接合良好或者是晶圓 程，“疋來”良好，來決定是否進行後續的電鍍製 Ι ί:: 損導致浪費製造的時間與成本。因 此，本發明之電化學電鍍裝置與習知之電化學電鑛裝置， 13 1290591 為一完整狀態，也可以偵測晶圓與 除了可以偵剛晶圓是 支托早元是否接人# 晶圓狀況以降低可=故可藉由此债測單元來預先摘測 鍍製程的良率…對電鍍製程的不利影響’進而提高電 彳的另優點為提供一種具有偵測基板狀況之電 化學電鍍方法，禆莊Λ祕上& 土双爪几心电 晶圓盘支托單。 貞測晶圓狀況之步驟，以確認The body line 268 is disposed between the gas source 262 and the push plate 218 for transporting gas into the space 280 via the air holes 218b of the push plate 218, thereby applying air pressure to the wafer 290; the pneumatic valve 266 is used for The switch of the control gas line 268 is controlled; the pressure regulating valve 264 is used to adjust the pressure of the gas; and the pressure gauge 270 is used to detect the gas pressure of the space 280 to confirm whether the air pressure changes. The gas line 268 further includes at least a rotary joint 272 for rotating a portion of the gas line 268 along with the push plate 218. It is understood that the rotary joint 272 is leakproof. Features. Further, in the present embodiment, the push plate 2丨8 has only one air hole 21 8b. However, it is not limited thereto, and a plurality of air hole arrays may be designed to be distributed on the grooves of the push plate 21 8 . Moreover, in the present embodiment, the gas system supplied by the gas source 262 is clean dry air, but other gases (e.g., nitrogen) may be used. It can be understood that the pressure of the gas provided by the detecting unit 260 in the space 280 is less than the pressure applied when the push plate 218 pushes the fixed wafer 290, so that the sidewall 218a of the plate 218 and the wafer 290 are pressed. The back surface 290a can be brought into contact to form a space 280. Further, in the present embodiment, the wafer 290 is used as the substrate for electrochemical plating, but the substrate is not limited thereto, and substrates of other materials may be used. The present invention is characterized in that the sidewall 21 8a of the push plate 2 18 is in close contact with the back surface 290a of the wafer 290, thereby forming a space 280 between the push plate 218 and the wafer 290, and using the air hole 218b of the push plate 218 The space 280 is connected to the gas line 268 of the debt measuring unit 260. Therefore, when the detecting unit 260 is operated, a clean and dry air of more than one atmosphere (i.e., 14 7 psi) 11 1290591 is sent from the gas source 262, and the pressure of the pressure regulating valve 264 is adjusted to a pressure slightly greater than one atmosphere (for example, 15 psi), the pneumatic chamber 266 opens the switch of the gas line 268 to deliver gas through the gas line 268 and the vent 21 to the space 28 between the push plate 218 and the wafer 290, and creates a space 28 in the space 28 Gas pressure of 15pS1. At this time, if there is no gap between the wafer 29〇 and the side wall 21 8a of the push plate 218, the gas supplied from the detecting unit 26〇 will not leak out from the space 280, so the pressure gauge 27〇 is detected. The air pressure of the space 280 does not decrease. This condition indicates that the wafer 29 〇 = the contact ring 217 is well bonded, and the wafer 29 〇 itself has no damage; if the wafer 290 and the side wall 218 of the push plate 218 are joined If the gap or the structure of the wafer 290 itself is defective, the gas supplied from the detecting unit 26 will leak out from the space 280, so that the pressure detected by the pressure gauge 27〇 will decrease. 29〇 is poorly bonded to the contact ring 217 or even the wafer 290 itself has a fragment. It can be understood that the configuration of the components of the detecting unit 260 is not limited to the above manner. For example, the pressure gauge 270 may be directly disposed on the push plate 218 and communicated with the space 280 to measure the space 28 The pressure is not limited to any of the detecting means for transporting gas into the space 280 and detecting the change in the pressure of the space of 28 〇 is included in the scope of the present invention. Referring to Figure 3, there is shown a flow chart of an electroless plating method in accordance with another embodiment of the present invention. First, a wafer 31 is provided in which the front side (production surface) of the crystal has at least one seed layer. Next, a crystal is placed on the contact ring 320, wherein the seed layer on the front side of the wafer is in electrical contact with the contact ring. Thereafter, a push plate is used to push the back surface (non-production surface) of the wafer 12 ^ 290591 3 3 0 ' to bond the wafer to the contact ring, wherein a space is formed between the push plate and the wafer. Then, the gas is introduced into the space between the push plate and the wafer by 34 〇 so that the gas pressure in the space reaches a predetermined gas pressure value, wherein the preset gas pressure value is at least greater than one atmosphere. Thereafter, it is detected whether there is a change 350 in the air pressure in the space to determine whether or not to perform the plating process. In this embodiment, the step of detecting the air pressure in the space uses a pressure gauge to detect the air pressure in the space. If the air pressure in the space drops from the preset air pressure value, it indicates that the wafer _ may not be placed so well that A gap is created between the wafer and the push plate or a fragment or defect occurs in the process of the support, thereby causing air leakage. At this time, a warning signal 360 is issued to notify the staff to check the condition of the wafer; if the air pressure in the space is still When the preset air pressure value is maintained, it indicates that the bonding between the wafer and the push plate is good or the structure of the wafer itself is not damaged, so that there is no air leakage, and at this time, the electrochemical plating process 37G is performed. In this implementation, the preset air pressure value is 15 psi. However, as long as the pressure is greater than the value of one 纟 air pressure, it can be used as the preset air pressure value. It can be understood that in the present embodiment, in addition to the circle as the substrate for electrochemical electric ore, the substrate of other materials may be used. In addition, in the present embodiment, the seed layer functions as the conductive, therefore, One of the advantages of the invention is that it provides a kind of bonding with the support unit or a wafer process, and it is good to determine whether or not to carry out subsequent electroplating. 损: The loss causes waste of manufacturing time and cost. Therefore, the electrochemical electroplating apparatus of the present invention and the conventional electrochemical electro-mineralizing apparatus, 13 1290591, are in a complete state, and can also detect whether the wafer is in contact with the wafer in addition to being able to detect the wafer. To reduce the yield of the plating process by the debt measuring unit, the adverse effect on the plating process, and the further advantage of improving the electrode is to provide an electrochemical plating method for detecting the condition of the substrate.禆庄Λ秘上& soil double claw several ECG wafer tray support sheet. Steps to test the condition of the wafer to confirm
整良H二否接合良好或者是晶圓本身結構是否完 圓接人不疋否進行後續的電鑛製程，藉以避免因晶 費激二=影響電鍍的效果或是晶圓本身破損導致浪 習知=雷π二”成本。因此’本發明之電化學電鑛方法與 °電予電鍍方法相比，不僅可大幅提昇電鍍製程的 良率，更可大幅降低製造的時間與成本。 如熟悉此技術之人員所瞭解的’以上所述僅為本發明之 =實施例而已，並非用以岐本發明之中請專利範圍；凡 其它未脫離本發明所揭示之精神下所完成之等效改變或修 飾’均應包含在下述之申請專利範圍内。 ^If the structure of the wafer is not well-connected, or if the structure of the wafer itself is completed, it will not be followed by the subsequent electrification process, in order to avoid the effect of plating or the damage of the wafer itself. = Ray 二 2" cost. Therefore, the electrochemical electrowinning method of the present invention can not only greatly improve the yield of the electroplating process, but also greatly reduce the manufacturing time and cost compared with the electroplating method. The above description is only the embodiment of the present invention, and is not intended to be used in the scope of the present invention; any other equivalent changes or modifications made without departing from the spirit of the present invention. 'All should be included in the scope of the patent application below. ^
【圖式簡單說明】 本發明的較佳實施例將於往後之說明文字中輔以下列 圖形做更詳細的闡述，其中： 第 第 第 示意圖 1Α圖係繪示習知之電化學電鍍裝置的外觀立體圖。 1B圖係繪示習知之電化學電鍍裝置的分解立體圖。 1C圖係繪示第1B圖中之陰極基板支托單元的剖面 〇 第2圖係繪示根據本發明之一實施例之電化學電_穿 1290591 置之陰極基板支托單元的剖面示意圖 實施例之電化學電鍍 第3圖係繪示根據本發明之另-方法的流程圖。BRIEF DESCRIPTION OF THE DRAWINGS A preferred embodiment of the present invention will be explained in more detail in the following description with reference to the following figures, wherein: FIG. 1 is a schematic view showing the appearance of a conventional electrochemical plating apparatus. Stereo picture. 1B is an exploded perspective view of a conventional electrochemical plating apparatus. 1C is a cross-sectional view of a cathode substrate supporting unit in FIG. 1B. FIG. 2 is a schematic cross-sectional view showing a cathode substrate supporting unit according to an embodiment of the present invention. Electrochemical Plating Figure 3 is a flow chart showing another method in accordance with the present invention.
【主要元件符號說明】 100 :電化學電鍍裝置 110 ： 110a :陰極基板支托單元 110b Π 1 :電子連接器 U3 :傳送器 112 ： 114 ： 115 :推板機構 115a 116 :波紋管座 117 ： 11 8 :推板 120 ·· 125 :護套 130 ： 140 :固定架 150 ： 190 :晶圓 210 ： 211:電子連接器 212 ： 213 :傳送器 214 ： 21 5 ·推板機構 215a 216 :波紋管座 217 ： 21 8 :推板 218a 218b :氣孔 260 ： 262 :氣體源 264 ： 266 :氣動閥 268 ： 270 :壓力計 272 ： 頭部單元 :組件致動器 旋轉馬達 磁鐵感測器 :升降桿 接觸環 電鍍液儲槽 底座 外殼 陰極基板支托單元 旋轉馬達 磁鐵感測器 :升降桿 接觸環 :側壁 偵測單元 調壓閥 氣體管路 旋轉接頭 15 1290591 280 :空間 290 :晶圓 290a :背面 3 1 0 :提供一晶圓 320 :放置晶圓於接觸環上 3 30 ··使用推板來推壓晶圓背面 340 ··通入氣體於推板與晶圓之間的空間中 3 50 :偵測空間中之氣壓是否有變化[Description of main component symbols] 100: Electrochemical plating apparatus 110: 110a: Cathode substrate supporting unit 110b Π 1 : Electronic connector U3: Transmitter 112: 114: 115: Push plate mechanism 115a 116: Bellows seat 117: 11 8: push plate 120 ·· 125 : sheath 130 : 140 : mount 150 : 190 : wafer 210 : 211 : electronic connector 212 : 213 : conveyor 214 : 21 5 · push plate mechanism 215a 216 : bellows seat 217 : 21 8 : Push plate 218a 218b : Air hole 260 : 262 : Gas source 264 : 266 : Pneumatic valve 268 : 270 : Pressure gauge 272 : Head unit : Assembly actuator Rotating motor Magnet sensor : Lifting rod contact ring Electroplating solution tank base housing cathode substrate support unit rotating motor magnet sensor: lifting rod contact ring: side wall detection unit pressure regulating valve gas line rotary joint 15 1290591 280: space 290: wafer 290a: back 3 1 0 : Providing a wafer 320 : placing the wafer on the contact ring 3 30 · using a push plate to push the back side of the wafer 340 · · introducing gas into the space between the push plate and the wafer 3 50 : detecting space Is the pressure in the middle? Variety
360 :發出警告訊號 3 70 :進行電化學電鍍製程360: Issue a warning signal 3 70: Conduct an electrochemical plating process
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