TWM322104U - Improved structure of solar cell plate - Google Patents
Improved structure of solar cell plate Download PDFInfo
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- TWM322104U TWM322104U TW096202518U TW96202518U TWM322104U TW M322104 U TWM322104 U TW M322104U TW 096202518 U TW096202518 U TW 096202518U TW 96202518 U TW96202518 U TW 96202518U TW M322104 U TWM322104 U TW M322104U
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- electrode wiring
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- 239000000758 substrate Substances 0.000 claims description 22
- 238000005538 encapsulation Methods 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 6
- 238000005516 engineering process Methods 0.000 claims description 5
- 229910002601 GaN Inorganic materials 0.000 claims 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims 2
- KVGZZAHHUNAVKZ-UHFFFAOYSA-N 1,4-Dioxin Chemical group O1C=COC=C1 KVGZZAHHUNAVKZ-UHFFFAOYSA-N 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 241000255925 Diptera Species 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000004643 material aging Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0543—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the refractive type, e.g. lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Description
M322104 八、新型說明: 【新型所屬之技術領域】 -本創作係有關於一種太陽能板結構改良,特別是關於-種具有球狀透鏡之 - 太陽能板結構。 【先前技術】 太陽能是-種豐富、安全'零無染之能源,對目前資源已日漸缺乏的地球 I而言’更是一種最佳的新能源替代來源。 <而最騎太陽祕換為電能财式是光電半導體糾也就是一般 稱之為太陽能板來賴,它的運作方式係_接收太陽光照射,而產生大量的 自由電子,再由電子的移動來產生電流。但是,單一太陽能板所能輸出之電流 相當有限,為了提高發《,往往需要串並聯組合聽做成大_之太陽能板 核、、且。雖然’可依照需求騎太陽能板模組的組裝,但是這樣將使得整體太陽 能板模組體積過於龐大,且也使得欲利用這天然太陽資源者需花費更多之成 _ T此外’為了讓太陽能板模組能夠接蚊多太陽光之照射,更必須適當的旋 轉太陽能板模組,追縱太陽光的方向,以獲得更多㈣能。但是在這樣的結構 而求下’不僅需·模組組裝之材料與封裝製程成本,·並且吏需要I設驅動太 陽此板她轉向之元件,導致—般使时制狀陽能資观麻步。 因此,本創作提供一種無須驅動轉向元件即可可接收各方向太陽光之太陽 砲板結構,輪決财之太雜板缺失。 【新型内容】 本創作之主要目的在於提供一種太陽能板結構改良,其在太陽能板之封裝 M322104 ’達到最佳的太陽光利用, 層上設置有-球狀透鏡,以接收來自各方向之太陽光 而無須像習知需額外加設—太陽光方向追縱元件。 本創作之另一目的在於提供一種太陽能板結構改良,其能夠以一較小的體 積,即可達到有效得電量輸出。 丨乍之S目的在於提供—種太陽驗結觀良,其巾該太陽能板結構 -之太陽能晶片係觀表面貼和技術安裝於電極佈線上,而使整做計更為彈性。 本創作之又-目的在於提供一種太陽能板結構改良,其能大幅度降低使用 籲太陽能來發電所需的成本,進而使太陽能發電更易於被大眾所接受。 為達以上之目的,本辦提供—種太陽能板結構改良其包含有一基板, 其上具有陰極電極佈線與陽極電極佈線;_裝設於基板且與陰極電極與陽極電 極電性相連接之太陽能晶片卜覆蓋練與太陽能晶片之封裝層;以及一位於 封裝層上用以接收來自各種不同方向之球狀透鏡。 效為使貝審查委員對本創作之結構特徵及所達成之功效更有進一步之瞭 解與認識,謹倾難之實關配合詳蚊說明,說明如後: 【實施方式】 首先’睛參閱第1〜第5圖,其係依序為本創作之正面視圖、俯視圖、側面 視圖、仰個與基板之表面佈線示意圖。如圖所示,本創作包含有_基板1〇, 其材質可以疋—氧她,基板1G上佈線有陰極電極佈線12與陽極電極佈線14, 且陰極電極佈線12與陽極電極佈線14延伸至基板1()背面形成陰極電極佈線末端 與陽極電極佈線末端,如第4圖所示;一利用表面貼裝技術(SMT) 貼附於陰極 電極佈線12前端的太陽能晶㈣,其材質可_氮化鎵,且為便於將太陽能晶 M322104 片20定位於陰極電極佈線12前端,係將陰極電極佈線12前端形成有一相對較大 之貼和區域22,而在太陽能晶片2〇 (2x2的四個太陽能晶片)間係形成有數個金 屬佈線24,且金屬佈線24係利用一金屬導線26與陽極電極佈線μ前端電性連 ,接。此外,為便於將金屬佈線24與陽極電極佈線14前端打線接合,係將陽極電 •極佈線14之前端形成T字型;一覆蓋於基板1〇與太陽能晶片2〇上,以將基板1〇、 -太陽旎晶片10、以及與太陽能晶片2〇位於同一側之陰極電極佈線12與陽極電極 佈線14進行封裝的封裝層28 ;以及,-位於封裝層28上之球狀透鏡3〇,其係利 _用球狀結構面在不同的太陽視許皆可接收來自各角度之太陽光,以使太陽光 能抵達太陽能晶片20,進而使太陽能晶片進行發電運作。 在本創作中lmm尺寸之太陽能板所能產生之電能為〇· 5伏,尺寸之太陽能 板所能產生之電能為2伏。 本創作之太陽能板上具有一球狀透鏡,可供接收來自各種角度之太陽光, 以使太陽能板不需進行太陽光追蹤,即可充分的利用各種角度的太陽光進行發 電。再者,因為本創作之太陽能板尺寸相對於習知之太陽能板較小,而在單位 鲁面積所能輸出之電能顯著較高,因此可以應用在如遙控器、手機、個人行動助 理或者衛星定位系統等各種需要便攜式的電子裝置。 再者,若需要更強大之電量,本創作也可進行模組化組裝,將數個本創作 之具有球狀透鏡之太陽能板裝配在一起,以達到所需乏電量。或者,也可加上 電子裝置原有之電池元件,以在不同場合下,如有光線或無光線下進行適當調 整供電。 綜上所述,本創作係為一種太陽能板之結構改良,其係於太陽能板封裝結 構上设置有一球狀透鏡,以接收來自各種角度之太陽能光線至太陽能晶片,大 7 M322104 幅度提升將太陽能轉換為電能的效率。在本創作之結構設計下,將不需要追蹤 太陽光來源之轉動元件,且也可大幅度減少太陽能板所需之太陽能晶片的數 -量’因此可大幅度減少利用太陽能所需的成本,進而使太陽能之利用更為普及。 - 惟以上所述者,僅為本創作一較佳實施例而已,並非用來限定本創作實施 _之範圍,故舉凡依本發明申請專利範圍所述之形狀、構造、特徵及精神所為之 —均等變化與修飾,均應包括於本發明之申請專利範圍π。 【圖式簡單說明】 ®第1圖係本創作之正面視圖。 第2圖係為本創作之俯視圖。 第3圖係為本創作之側面視圖。 第4圖係為本創作之仰視圖。 第5圖係為本創作之基板之表面佈線示意圖。 【主要元件符號說明】 • 10基板 12陰極電極佈線 14陽極電極佈線 20太陽能晶片 22貼和區域 24金屬佈線 26金屬導線 28封裝層 30球狀透鏡
Claims (1)
- M322104 九、申請專利範園: ga t ί , ]‘ 1·一種太陽能板結構改良,其包含有: L———…^::二 一基板,其上形成有一陽極電極佈線與一陰極電極佈線; 至少一太陽能晶片,其係裝設於該基板上,且該太陽能晶片係與該陽極電極佈 - 線與該陰極電極佈線電性相連接; …一封裝層,其係覆蓋在該基板上,用以將該太陽能晶片、該基板與該基板表面 上之該陽極電極佈線與該陰極電極佈線封裝;以及 φ —球狀透鏡,其係位於該封裝層之表面上,該球狀透鏡係用以接收各種角度之 太陽光。 2·如申請專利細第1項所述之太陽能板結構改良,其中該太陽能晶片係利用表 面貼裝技術(SMT)貼和在該陽極電極佈線與該陰極電極佈線上。 3·如申請專利細第1項所述之太陽能板結構改良,其中該太陽能晶片係利用表 面貼裝技術(SMT)貼和在該陰極電極佈線上。 4·如申請專利範圍第3項所述之太陽能板結構改良,其中該太陽能晶片與該陽極 0電極佈線係利用一導線電性連接。 5·如申請專利範圍第1項所述之太陽能板結構改良,其中該封裝層與該球狀透鏡 係為一體成形。 6·如申請專利範圍第1項所述之太陽能板結構改良,其中該基板之材質為二氧化 !呂0 7·如申請專利範圍第1項所述之太陽能板結構改良,其可應用於遙控器、手機、 個人行動助理或者衛星導航定位系統。 8·如申請專利範圍第1項所述之太陽能板結構改良,其中該太陽能晶片之材質為 M322104. ;7 ΐ L·. \J· t α :丨 ;L.… p. u % 氮化鎵。 9·如申请專利細第1項所述之太陽能板結構改良 ,其中該陽極電極佈線之前端 係形成Τ字型。 10.—種太1%能板結構改良,其包含有: 一基板,其上形成有一陽極電極佈線與一陰極電極佈線; 至少一太陽能晶片,其係裝設於該陰極電極佈線前端上,且該太陽能晶片係與 該陽極電極佈線與該陰極電極佈線電性相連接; 一封裝層,其係覆蓋在該基板上,用以將該太陽能晶片、該基板與該基板表面 上之該陽極電極佈線與該陰極電極佈線封裝;以及 一球狀透鏡,其係位於該封裝層之表面上,該球狀透鏡係用以接收各種角度之 太陽光。 11·如申睛專利範圍第10項所述之太陽能板結構改良,其中該太陽能晶片係利用 表面貼裝技術(SMT)貼和在該陰極電極佈線上。 12·如申請專利細第10項所述之太陽能板結構改良,其中該太陽能晶片與該陽 φ極電極佈線係利用一導線電性連接。 13·如申請專利範圍第1〇項所述之太陽能板結構改良,其中該封裝層與該球狀透 鏡係為一體成形。 14·如申請專利範圍第1〇項所述之太陽能板結構改良,其中該基板之材質為二氧 化銘。 15·如申請專利範圍第10項所述之太陽能板結構改良,其可應用於遙控器、手 機、個人行動助理或者衛星導航定位系統。 1·6·如申請專利範圍第1〇項所述之太陽能板結構改良,其中該太陽能晶片之材質 M322104. ' I ga ι 气 為氮化鎵。 17·如申請專利範圍第10項所述之太陽能板結構改良,其中該陽極電極佈線之前 端係形成T字型。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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TW096202518U TWM322104U (en) | 2007-02-09 | 2007-02-09 | Improved structure of solar cell plate |
US11/965,715 US20080190478A1 (en) | 2007-02-09 | 2007-12-27 | Solar energy board |
EP08100702A EP1956662A3 (en) | 2007-02-09 | 2008-01-21 | Encapsulated solar panel with lens |
Applications Claiming Priority (1)
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TW096202518U TWM322104U (en) | 2007-02-09 | 2007-02-09 | Improved structure of solar cell plate |
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TWM322104U true TWM322104U (en) | 2007-11-11 |
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TW096202518U TWM322104U (en) | 2007-02-09 | 2007-02-09 | Improved structure of solar cell plate |
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US (1) | US20080190478A1 (zh) |
EP (1) | EP1956662A3 (zh) |
TW (1) | TWM322104U (zh) |
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WO2016200988A1 (en) | 2015-06-12 | 2016-12-15 | The Arizona Board Of Regents On Behalf Of The University Of Arizona | Tandem photovoltaic module with diffractive spectral separation |
WO2017024038A1 (en) | 2015-08-03 | 2017-02-09 | The Arizona Board Of Regents On Behalf Of The University Of Arizona | Solar concentrator for a tower-mounted central receiver |
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- 2007-12-27 US US11/965,715 patent/US20080190478A1/en not_active Abandoned
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2008
- 2008-01-21 EP EP08100702A patent/EP1956662A3/en active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2009140175A2 (en) * | 2008-05-12 | 2009-11-19 | Arizona Board Of Regents On Behalf Of University Of Arizona | Photovoltaic generator with a spherical imaging lens for use with a paraboloidal solar reflector |
WO2009140175A3 (en) * | 2008-05-12 | 2010-07-22 | Arizona Board Of Regents On Behalf Of University Of Arizona | Photovoltaic generator with a spherical imaging lens for use with a paraboloidal solar reflector |
GB2471816A (en) * | 2008-05-12 | 2011-01-12 | Univ Arizona State | Photovoltaic generator with a spherical imaging lens for use with a paraboloidal solar reflector |
CN102113135A (zh) * | 2008-05-12 | 2011-06-29 | 亚利桑那大学董事会 | 用于抛物面太阳能反射器的球面成像透镜的光伏发电机 |
GB2471816B (en) * | 2008-05-12 | 2012-10-24 | Univ Arizona State | Photovoltaic generator with a spherical imaging lens for use with a paraboloidal solar reflector |
AU2009246638B2 (en) * | 2008-05-12 | 2013-02-21 | Arizona Board Of Regents On Behalf Of University Of Arizona | Photovoltaic generator with a spherical imaging lens for use with a paraboloidal solar reflector |
CN102113135B (zh) * | 2008-05-12 | 2014-10-22 | 亚利桑那大学董事会 | 用于抛物面太阳能反射器的球面成像透镜的光伏发电机 |
Also Published As
Publication number | Publication date |
---|---|
EP1956662A3 (en) | 2009-12-23 |
US20080190478A1 (en) | 2008-08-14 |
EP1956662A2 (en) | 2008-08-13 |
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Legal Events
Date | Code | Title | Description |
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MM4K | Annulment or lapse of a utility model due to non-payment of fees |