-M308623 八、新型說明： 【新型所屬之技術領域】 種高散 本創作係有關^一種發光一極體之散敎梦晉，女# 熱效能之發光二極體之散熱裝置。^置μ 【先前技術】 按，發光二極體具有體積小、重量輕、低耗電、壽命+等 諸多優點，因此廣泛使用於電腦周邊、通訊產品以及 ^ 裝置中。 -他冤千 而在高功率發光二極體元件中’尤其是可提供照明 發光二極體元件’為提供更大之出光量，往往必須提高 極體之工作電流，或者使增大每—個發光二極體元件之 粒尺寸；，然而隨著工作電流的提升，將會使的發光晶粒產生^ 多的熱量，因而導致發光晶粒的工作溫度隨之上升，而 粒之工作溫度越高’則發光效率越低 二曰曰 =傷害’因，如何將發光二極體元件之 界排出’以使發光一極體兀件保持適當之工作溫度，進而 發光效率以節省麟，正是高功轉紅鋪 ^ 上的一項重要課題。 你π九lx展 7有-種具高散熱性效能之發光二極體，其封裝製成步 驟如下· 1、提供-具金屬材質之基板2上貫孔，已形成複數貫穿 孔2 1於基板2上，如第一圖（A)所示。 、 2贫施以絕緣處理’將絕緣層22覆蓋或塗佈㈣以表 面，如第一圖（B)所示。 M308623 3、稷製兩段分離之銅箱電路，亦即產生 2以及P型導電銅辖i 3之圖形於絕緣層此二 如第一圖（C)所示。 心上卜衣囬 月ρί道1下絕緣層2 2相對應於N型導電銅箔1 2以 或塗佈於在貫料絕㈣轉絕制2 2覆蓋 5、於貫穿孔2 !内壁之絕緣層2 2上設置連接層2 3， 成上、下N型導電銅箔1 2以及P型導電鋼箔1 3曰之電性 連接’第-圖(E)所示。 i白丄d之冤f生 型二第依序為固晶、打線及膠體封裝’到最後成 如ί:=:!示具高散熱性效能之發光二極體1結構。-M308623 VIII. New description: [New technical field] High-volume type This is related to the heat dissipation device of the light-emitting diode of the light-emitting diode. ^定μ [Prior Art] Press, the light-emitting diode has many advantages such as small size, light weight, low power consumption, life + and so on, so it is widely used in computer peripherals, communication products and devices. - He is in the high-power LED component, especially in providing illumination LED components, in order to provide a larger amount of light, it is often necessary to increase the operating current of the polar body, or to increase each The grain size of the light-emitting diode element; however, as the operating current increases, the light-emitting crystal grains will generate a large amount of heat, thereby causing the operating temperature of the light-emitting die to rise, and the working temperature of the grain is higher. 'The lower the luminous efficiency, the lower the 曰曰=harm', because how to discharge the boundary of the illuminating diode element' so that the illuminating one-piece element maintains the proper working temperature, and thus the luminous efficiency to save the lin, it is the high-power An important topic on the red shop. You have a high-efficiency light-emitting diode, and the package is made as follows. 1. Provide a through-hole on the substrate 2 with a metal material, and form a plurality of through holes 2 1 on the substrate. 2, as shown in the first figure (A). 2, poorly applied by insulation treatment 'covering or coating (4) the insulating layer 22 on the surface as shown in the first figure (B). M308623 3. Two-stage separated copper box circuit, that is, a pattern of 2 and P-type conductive copper i 3 is applied to the insulating layer as shown in the first figure (C). The inner layer of the cloth is returned to the moon, and the insulating layer 2 2 is corresponding to the N-type conductive copper foil 1 2 or coated on the inner wall of the through hole 2 The connection layer 2 3 is provided on the layer 2 2, and the electrical connection of the upper and lower N-type conductive copper foils 1 2 and the P-type conductive steel foil 13 3 is shown in the figure - (E). i 丄 丄 冤 生 生 生 生 生 生 生 生 生 固 固 固 固 固 固 固 固 固 固 固 固 固 固 固 固 固 固 固 固 固 固 固 固 固 固 固 ί ί ί ί ί ί ί
相9 , (示，該發光二極體之晶粒1 1係設置於A 2上’彻金屬本身散錄佳之㈣，將晶粒U $ 使加工日⑽較長，導致加讀率較低且不良率亦增加。 【新型内容】 之散：Γ=即在提供一種高散熱效能之發光二極體 ϋ广達到真正Μ度表現、高壽命之發光二極體。 少上述目的，本創作之之發光二極體之散熱褒置，盆至 =有.絕緣基座以及散熱底座，該絕緣基座具有上、Ρ 、一開孔，散熱底產則設置於第-鬥了丨士 :::置於第—開孔處並與散熱底座相接觸：該散ί=ΐ 政熱之特性，以提高發方二極體發光效率、亮度以及壽命。 M308623 【實施方式】 為月b使S審查委員清楚本創作之結構 作方式，兹配合圖式說明如下： 少包=作「發光二極體之散熱裝置」’如第二圖所示，其至 ”-絕緣基座3 1，其可以為㈣材質並具有上、下疊置之 弟一、二開孔3 1 1、3 1 2。 熱ίί32，係設置於第二開孔312中，該散熱底 1 ^以:、、、散熱效能較高之金屬材質，例如銅鎢、銅雜、銘 =屬，或鐵鎳銘合金’其絕緣基座3丄與散熱底座3 2 y' ;斗)錫β、间分子接著劑或玻璃烊料。 並延伸至：:二:表:収置於第’。3 1 1兩内侧 設於 電極連接線路3 5 ’係貫穿絕緣基座3工，可作為 „ 3與電極3 4間之電性連接，如圖所例 以填㈣Π3 5工仙沖孔、雷射、鑽孔等方式製作出通孔， 真孔1程填人導體以形成導電孔3 5 i，使該導電孔3 5工 接，1以、去線曰路結構3 3連接，而另側則與電極3 4相連 座3 曰曰粒3 6固晶於第一開孔3 1 1處並與散熱底 基=目，’並與金屬線路結構3 3構成連接，並經由絕緣 之電極3 4固設於電路板上使用，而發光晶粒3 6運 M308623 作時’可利用本創作之散熱底座3 2本身金屬散熱較佳之特 性’將發光晶粒運作所產生的高溫藉由下方散熱底座快速均勻 導熱散逸至周圍環境中。Phase 9, (showing that the crystal 11 1 of the light-emitting diode is disposed on A 2 'the metal itself is well dispersed (4), and the grain U $ makes the processing day (10) longer, resulting in a lower reading rate and The non-performing rate has also increased. [New content] The dispersion: Γ = that is to provide a high-efficiency light-emitting diode ϋ 达到 达到 达到 达到 达到 达到 达到 达到 达到 达到 达到 达到 达到 达到 达到 达到 达到 达到 达到 达到 。 。 。 。 。 。 。 The heat-dissipating device of the light-emitting diode, the basin to = has an insulating base and a heat-dissipating base, the insulating base has an upper, a 、, an opening, and the heat-dissipating bottom is set in the first-bucket gentleman::: At the first opening and the contact with the heat sink base: the characteristics of the heat dissipation to improve the luminous efficiency, brightness and life of the hair diode. M308623 [Embodiment] For the month b, the S review committee is clear The structure of this creation is described as follows: Less package = "heat sink for light-emitting diode" as shown in the second figure, to "-insulated base 3 1, which can be (four) material And has the upper and lower overlapping brothers one, two openings 3 1 1 , 3 1 2. Hot ίί32, is set in the second In the hole 312, the heat dissipation bottom 1 ^ is: metal material with high heat dissipation performance, such as copper tungsten, copper miscellaneous, Ming = genus, or iron nickel alloy "the insulating base 3 丄 and the heat dissipation base 3 2 y'; bucket) tin β, inter-molecular binder or glass crucible. And extended to:: two: table: placed in the '. 3 1 1 two inside the electrode connection line 3 5 ' through the insulating base 3 work, can be used as the electrical connection between „ 3 and electrode 3 4 , as shown in the example of filling ( 4 ) Π 3 5 Gongxian punching, laser, drilling, etc. to make a through hole, the true hole 1 way to fill the conductor The conductive hole 35 5 i is formed, the conductive hole 35 is connected, 1 is connected to the detouring structure 3 3 , and the other side is connected to the electrode 3 4 , and the 3 3 is solidified in the first opening The hole 3 1 1 is connected to the heat dissipation substrate=mesh, and is connected to the metal circuit structure 33, and is fixed on the circuit board through the insulated electrode 34, and the light-emitting die 36 is transported as M308623. The heat-dissipating base of the present invention can be utilized. The characteristics of the metal heat dissipation of the metal itself are 'the high temperature generated by the operation of the light-emitting die is quickly and uniformly radiated through the lower heat-dissipating base to Surrounding environment.
如第三圖之第二實施例所示，該絕緣基座3 1具有上、下 堆疊層3 1 3、3 14，而第-、二開孔3 1 1、3 1 2則分 別e又置於上、下堆疊層3334中，而該電極連接線路 3 5則包含貫穿上、下堆疊層3工3、3丄4之導電孔3 5工 2及導電連接墊3 5 2，其導電連接墊3 5 2係位於上、下堆 豐層3 1 3、3 1 4間用以連接導電孔3 5 1，而上堆疊層3 1 3之導电孔3 5 1係與金屬線路結構3 3相連接，下堆疊層 3 1 4之導電孔3 5 1係與電極3 4相連接，而發光晶粒3 6 則由金屬線路結構3 3、導電孔3 5 1、導電連接墊3 5 2以 及導電孔3 5 1與電極3 4形成電性連接。 如第四圖之第三實施例所示，該絕緣基座3 1且有上、下 堆疊層313、314,而第一、二開孔311、3、12則分 =置於上、下堆疊層Η 3、3 i 4中，其下堆疊層3工4 =具有上下疊置之第—、二基底層3 i 5、3丄6，而該電 =接，3 5包含貫穿上堆疊層3 i 3以及第—基底層3 q ^^電孔3 5 1、導電連接墊3 5 2以及内埋線路3 5 q ^導電連接塾3 5 2係位於上堆疊層3 1 3與第-基底層 ___f用以連接導電孔3 5 1，而内埋線路3 5 3則設於第 底層3 1 5、3 1 6間用以連接導電孔3 5 1以及電 底座;晶粒3 6係設置於第—開孔31 1處並與散熱‘ 座3 2相接觸，該散熱底座3 2可以為—立體矩形结構體， 或具：凸塊3 2 1之結構體，如第三圖所示。 得以藉由電極連择線路3 5與電極3 4相連接。 M308623 值得一提的是，本創作利用散熱底座本身金屬散熱較佳之 特性，將發光晶粒運作所產生的高溫藉由下方散熱底座快速均 勻導熱散逸至周圍環境中，可提高發光二極體發光效率、亮度 以及壽命，且本創作中發光晶粒電路連接結構較為簡單，使其 封裝程序較為簡化。 如上所述，本創作提供一較佳可行之發光二極體之散熱裝 置，爰依法提呈新型專利之申請；以上之實施說明及圖式所 示，係本創作較佳實施例者，並非以此侷限本創作，是以，舉 凡與本創作之構造、裝置、特徵等近似、雷同者，均應屬本創 作之創設目的及申請專利範圍之内。 【圖式簡單說明】 第一圖（A)〜（E)係為習用發光二極體成型之結構示意圖。 第二圖係為本創作中第一實施例散熱裝置之結構示意圖。 第三圖係為本創作中第二實施例散熱裝置之結構示意圖。 第四圖係為本創作中第三實施例散熱裝置之結構示意圖。 【主要元件代表符號說明】 1 ---發光二極體 11 —晶粒 12— —N型導電銅箔 13— —P型導電銅箔 2 ---基板 2 1——貫穿孔 2 2——絕緣層 2 3——連接層 .M308623 - 31 絕緣基座 ’ 311—第一開孔 3 12—第二開孔 313— 上堆疊層 314— 下堆疊層 315— 第一基底層 316一第二基底層 3 2--散熱底座 ^ 3 2 1一凸塊 3 3--金屬線路結構 3 4--電極 3 5--電極連接線路 3 5 1—導電孔 3 5 2—導電連接墊 3 5 3一内埋線路 3 6--發光晶粒As shown in the second embodiment of the third figure, the insulating base 31 has upper and lower stacked layers 3 1 3 and 3 14 , and the first and second openings 3 1 1 and 3 1 2 are respectively set to e. In the upper and lower stacked layers 3334, the electrode connection line 35 includes a conductive hole 3 5 and a conductive connection pad 325 through the upper and lower stacked layers 3, 3, 4, and the conductive connection pad 3 5 2 is located between the upper and lower stacking layers 3 1 3, 3 1 4 for connecting the conductive holes 35 1 , and the upper conductive layer 3 1 3 of the conductive holes 3 5 1 is connected with the metal line structure 3 3 The conductive holes 3 5 1 of the lower stacked layer 3 1 4 are connected to the electrode 34 , and the light-emitting die 3 6 is composed of the metal line structure 3 3 , the conductive hole 35 1 , the conductive connection pad 35 2 and the conductive The hole 3 5 1 is electrically connected to the electrode 34. As shown in the third embodiment of the fourth figure, the insulating base 31 has upper and lower stacked layers 313, 314, and the first and second openings 311, 3, 12 are divided into upper and lower stacks. In the layer Η 3, 3 i 4 , the lower stacked layer 3 4 has the first and second base layers 3 i 5 , 3 丄 6 , and the electrical connection, the 3 5 includes the upper stacked layer 3 i 3 and the first base layer 3 q ^ ^ hole 3 5 1 , the conductive connection pad 3 5 2 and the buried line 3 5 q ^ conductive connection 塾 3 5 2 is located in the upper stacked layer 3 1 3 and the first base layer ___f is used to connect the conductive holes 3 5 1 , and the buried line 3 5 3 is disposed at the bottom layer 3 1 5, 3 16 to connect the conductive holes 3 5 1 and the electric base; The first opening 31 1 is in contact with the heat dissipation seat 32. The heat dissipation base 32 may be a three-dimensional rectangular structure or a structure of a bump 3 2 1 as shown in the third figure. It is connected to the electrode 34 by the electrode connecting line 35. M308623 It is worth mentioning that this design utilizes the characteristics of the metal heat dissipation of the heat sink base itself, and the high temperature generated by the operation of the light-emitting die is quickly and uniformly radiated to the surrounding environment by the heat-dissipating base below, thereby improving the luminous efficiency of the light-emitting diode. Brightness and longevity, and the light-emitting die circuit connection structure in this creation is relatively simple, which makes the packaging process simpler. As described above, the present invention provides a heat-dissipating device for a light-emitting diode that is better and more suitable for applying a new patent according to the law; the above description and drawings show that the preferred embodiment of the present invention is not This limitation is based on the creation of the creation, the installation, the features, and the like, and the similarity and the scope of the patent application. [Simple Description of the Drawings] The first figures (A) to (E) are schematic structural views of conventional light-emitting diodes. The second figure is a schematic structural view of the heat dissipating device of the first embodiment in the present invention. The third figure is a schematic structural view of the heat dissipating device of the second embodiment in the present creation. The fourth figure is a schematic structural view of the heat dissipating device of the third embodiment in the present creation. [Description of main component representative symbols] 1 --- Light-emitting diode 11 - Die 12 - N-type conductive copper foil 13 - P-type conductive copper foil 2 --- Substrate 2 1 - Through-hole 2 2 - Insulating layer 2 3 - connecting layer. M308623 - 31 insulating base '311 - first opening 3 12 - second opening 313 - upper stacked layer 314 - lower stacked layer 315 - first base layer 316 - second substrate Layer 3 2--heat sink base ^ 2 2 1 bump 3 3--metal circuit structure 3 4--electrode 3 5--electrode connection line 5 5 1 - conductive hole 3 5 2 - conductive connection pad 3 5 3 Buried line 3 6--luminous crystal