M285030 : 八、新型說明： 【新型所屬之技術領域】 本創作係有關於一種打光裝置，特別是指一種遮光板以及 反射聚光鏡面形成可將入射光源由高入射角調整至低入射角 之一種影像感測晶片表面檢測用之打光裝置。 【先前技術】 \ 由於數位科技的發展，帶動了影像產業的進步，尤其在現 馨代人的生活當中數位影像佔據了相當重要的一部分，不論是手 機、數位像機或者是網路像機等，影像擷取裝置的確深入到現 代人的日常生活當中。 而在影像擷取裝置中，其重要的核心即為可以感光之影像 感測晶片’利用半導體製程技術，可以將影像感測之光學元件 製作於一晶片上’不過由於影像感測之光學元件相當微小以及 精密’因此是不容許有任何之瑕疵以及缺陷而影響到將來光學 感測之動作’所以如何精準以及有效率的檢測影像感測晶片的 鲁缺陷在影像感測晶片的製作過程中扮演重要的一環。 、而在習用之技術當中（不論為人工檢測或者是自動檢 測）通吊疋以同照明強度之光源、，例如：函素燈源以及光鐵 ΐ影像感測晶片進行打光，然後再配合高倍顯微鏡 像感測晶片表面刮傷造成微稜鏡破損時瑕疵與 比不明顯，或者是使得污染微粒反光角度不佳而二二=對 顯之影像’如此都會造成對於檢測時之檢出率不佳的二不明 5 M285030 其是在自動檢蜊時，上述之問題更會造成影像處理之負擔，使 得檢測速度緩慢而影響到產能。 、'vf· δ上达之問題，因此即需一種影像感測晶片表面檢測用 之打光裝置’來解*制技賴產生之問題。 【新型内容】M285030 : VIII. New description: [New technical field] This creation is about a kind of lighting device, especially a kind of visor and reflective concentrating mirror surface to adjust the incident light source from high incident angle to low incident angle. The image sensing device is used for detecting the surface of the wafer. [Prior technology] \Development of digital technology has driven the advancement of the imaging industry, especially in the life of the new generation of occupants, which is a very important part of the digital image, whether it is a mobile phone, a digital camera or a network camera. The image capture device does penetrate into the daily life of modern people. In the image capturing device, the important core is the sensible image sensing chip. Using semiconductor processing technology, the optical component of the image sensing can be fabricated on a wafer. However, the optical components of the image sensing are equivalent. Tiny and precise 'so it is not allowed to have any flaws and defects that affect the future optical sensing action' so how to accurately and efficiently detect the image defect of the image sensing wafer plays an important role in the production of image sensing wafers A ring. In the conventional technology (whether for manual detection or automatic detection), the sling is illuminated with a light source of illumination intensity, for example, a light source and an optical stencil image sensing chip, and then matched with a high power. The microscope image senses that the scratch on the surface of the wafer causes the flaws and the ratio is not obvious, or the reflective angle of the contaminated particles is not good, and the image of the display is so good that the detection rate is poor for the detection. The two unknowns 5 M285030 When the automatic inspection, the above problems will cause the burden of image processing, making the detection speed slow and affecting the production capacity. The problem of 'vf· δ is required, so that a photo-detecting device for image sensing wafer surface inspection is needed to solve the problem caused by the technology. [New content]
本創作的主要目的是提供一種影像感測晶片表面檢測用 之打光裝置’其係提供一可將投射之光源由高入射角轉換成低 ,射角之分光調整部將光源投射於影像感測晶片上，達到提 w像背景以及瑕㈣比之目的。 的久要目的是提供一種影像感測晶片表面檢測用 打穿置 人射角’乂其係提供一可將投射之光源由高入射角轉換成低 景氣 分光調整部將光源投射於影像感測晶片上，以提升 ^ “曰曰片背景以及瑕疵對比，達到縮短影像處理時間之目 的〇 為了達到上述之目的，本創作係提供一種影像感測晶片表 3測用之打光裝置，其係可投射光源至置放於檢測平台上之 一影像感剩晶片上，該影像感測晶片表面檢測用之打光裝置包 括2 —光源部以及一分光調整部。該光源部，可投射光源於分 光调整部，該分光調整部，其係可接收該光源而將該光源反射 ，中經由至少-出光Q而投射至該影像感測晶片，該分光調整 4更包括有·-遮光體，其係位於該光源部與該影像感測晶片 之間以防止該光源直接投射至該影像感測晶片上；以及一光反 射體，其係可導引集中該光源投射至該影像感測晶片上。 6 M285030 ’ 較佳的是，該遮光體係為一遮光板體。 較佳的是，該光反射體係為一反射鏡。 較佳的是，該光源部係為自素燈。 較佳的是，該光源部係為複數個發光二極體。 ，較佳的是’該遮光體係為一環形標光板，該環形槽光板之 •中央中空區域係置於該影像感測晶片之上，使得該環形檔光板 • 之檔光板體圍繞於該影像感測晶片之周圍，該環形檔光板之檔 光板體上靠近該影像感測晶片之一側更開設有該至少一出光 • 口。該光反射體係為一環形反射柱，該環形反射柱具有可容置 該壞形檔光板之一中空區域以及一環形反射曲面，該環形反射 曲面與該環形檔光板之間形成一環形受光面。該光源部係為可 套設於該環形受光面上之一環型光源體。 較佳的是，該至少一出光口係為該遮光體以及該光反射體 之間所間隔之空間區域所形成。 較佳的是，該至少一出光口開設於該遮光體靠近該影像感 測晶片之一侧之壁面上。 【實施方式】 為使貴審查委員能對本創作之特徵、目的及功能有更進 一步的認知與瞭解，下文特將本創作之裝置的相關細部結構以 及設計的理念原由進行說明，以使得審查委員可以了解本創 作之特點’詳細說明陳述如下： • 請參閱圖一 A以及圖一B所示，其中圖一A係為高打光角 • 度之光源投射至影像感測晶片上之瑕疵之光徑反射示意圖；圖 一 B係為低打光角度之光源投射至影像感測晶片上之瑕疵之光 徑反射示意圖。從這兩個圖可以了解光之高入射角以及低入射 7 M285030 角時對於影像之影響。如圖一 A中所示，在高打光角度入射光 91投射至影像感測晶片1之瑕疵微稜鏡12或者是正常之微稜 鏡11時其反射之光技並無差異，因此高打光角使瑕疵微稜鏡 12與正常棱鏡11產生之影像對比幾乎使觀測者8無法辨識。 •而在圖一 B中，當低打光角度入射光92進入到該影像感測晶 - 片1之瑕疵微稜鏡12或者是正常之微稜鏡11時其反射之光徑 •在瑕疵微稜鏡12以及正常微棱鏡u上有明顯之差異，在正常 微稜鏡11時有較明顯之反射光，而在瑕疵微稜鏡12上並無明 •顯之反射光，因此可以增加瑕疵微稜鏡12以及正常之微棱鏡 11影像之對比，以利觀測者8辨識。 在圖一 A以及圖一 B中雖然高打光角度入射光μ以及低 打光角度入射光92對於污染微粒4之反射亮度並無差異，， 如圖一所示，當該低打光角度入射光92投射到該正常之微稜 鏡11之反射角度並不如圖一 A中該高打光角度入射光92投射 到該正常之微稜鏡11之反射角度來的大，所以高角度打光之 背景亮度偏高，低角度打光背景亮度偏低，因而更突顯出污染 春微粒4影像與背景影像對比之差異。 又如圖二所示，該圖係為高低打光角度投射至影像感測晶 片上之微稜鏡之光控示意圖。低打光角入射光92在微稜鏡I! 上往觀測方向產生較低反射量，而穿透折射光線大量入射至微 稜鏡的間隙13’因此有效降低微稜鏡陣列所產生之結構性特徵 "(微稜鏡排列之影像）而突顯出缺陷之影像特徵。反之由於高打 • 光角入射光91大部分於微棱鏡11上產生較高之反射量，反而 • 降低微稜鏡與瑕疵之對比程度而不利於影像辨識。 綜合上述’可以發現低入射角度之入射光源對於影像檢測 之檢出率有很大的幫助。請參閱圖三A所示，該圖係為本^作 8 M285030 •影像感測晶片表面檢測用之打光裝置之第一較佳實施例示音 圖。該打光裝置2可投射光源至置放於_平台上之—影像^ 測晶片1上，該打光裝置2包括有一環型光源體21以及一分 光調整部22。該環型光源體21係可投射出一光源9〇，在本實 施例中，該環型光源體21係由複數個發光二極體21〇所構成。 •此外，該環形光源體21之發光元件也可以選擇為鹵素燈。 •請參閱圖三B、三C所示，其中圖三B係為本創作影像感 測晶片表面檢測用之打光裝置之第一較佳實施例之分光調整 _部示意圖；圖三C係為本創作影像感測晶片表面檢測用之打光 裝置之第一較佳實施例之分光調整部剖面立體示意圖。該分光 調整部22包括有一環型檔光板221以及一環型反射柱222。該 環形檔光板221之中央中空區域2210係置於該影像感測晶片1 之上’使得該環形檔光板221之檔光板體2211圍繞於該影像 感測晶片1之周圍。該環形反射柱222具有可容置該環形檔光 板221之一中空區域2223以及一環形反射曲面2222，該環形 反射曲面2222係與水平面呈現一角度θ，以反射集中光線由 春該出光口 24(如圖三A所示）射出，該環形反射曲面2222與該 環形檔光板221之間形成一環形受光面23。該環形檔光板221 之檔光板體2211上靠近該影像感測晶片1之一側更開設有至 少一出光口 24。再本實施例中，共開設有四個出光口 24、24a、 24b，其中第四個出光口（圖中未示）係設置於該出光口 24之對 - 面。再回到圖三A所示，該環型光源體21係可設置於該環型 • 受光面23上。 . 請參閱圖四所示，該圖係為本創作影像感測晶片表面檢測 用之打光裝置之第二較佳實施例示意圖。該打光裝置可投射光 源至置放於檢測平台上之一影像感測晶片上，該打光裝置3包 9 M285030 ，括··一光源部31以及一分光調整部％。該光源部31可以投射 出一光源90，在本實施例十該光源部31係可選擇為發光二極 體或者是鹵素燈等發光源。 • 該分光調整部32，其係可接收該光源90而將該光源90反 •射集中經由至少一出光口 33而投射至該影像感測晶片丨，該分 - 光調整部32更包括有：一遮光體321以及一光反射體322。該 • 遮光體321位於該光源部31與該影像感測晶片丨之間，該遮 光體321可以防止該光源90直接投射至該影像感測晶片1上， 籲在本實施例中，該遮光體321係為一遮光板體。該光反射體 322,其係可導引集中該光源投射至該影像感測晶片1上。。 在本實施例中’光反射體322係為一反射鏡，該反射鏡係與水 平面成一夾角0。該至少一出光口 33係為該遮光體321以及 該光反射體322之間間隔之空間區域所形成或者是開設於該遮 光體321靠近該影像感測晶片1之一侧之壁面上。 請參閱圖五A以及圖五B所示，該圖係為本創作之第一較 佳實施例光徑示意圖。由圖五A可以了解由該環型光源體21 鲁所發射出來之光源90所產生之入射光94經由具有反射以及集 中效果之該環型反射曲面2222反射至該出光口 24。為了避免 光源90直接照射於該影像感測晶片1上，造成降低對比而影 響影像判斷，因此設置了該環型檔光板221，其檔光板體2211 可以隔絕光源90以使光源90所產生之入射光94從該出光口 • 24離開，而投射至該影像感測晶片1上，產生背景與瑕疵對比 ' 度南之影像，以供觀察者8判斷。該出光口 24係開設於該壤 • 型檔光板221上，可以視狀況需求開設以控制較佳之打光效 果，如圖五B所示，在本實施例中係開設有四個出光口，使由 該出光口出射之低入射角入射光95可以投射至該影像感測晶 M285030 ^片1上，使得影像瑕疵，例如令、★ y ^ , j如π染微粒4，可以清楚的顯現出 來。 唯以士所述者，僅為本創作之較佳實_，料能以之限 制本創作㈣。即大凡依本創作申請專利範圍所做之均等變化 •及修飾’仍將不失本創作之要義所在，亦不脫離本創作之精神 和範圍，故都應視為本創作的進一步實施狀況。 • 綜合上述’本創作由於具有提升背景以及瑕疵之對比的優 點所以可以滿足業界之需求，進而提高該產業之競爭力，誠已 ⑩符合創作專利法所規定申請創作所需具備之要件，故爰依法呈 提創作專利之申請，謹請貴審查委員允撥時間惠予審視，並 賜準專利為禱。 【圖式簡單說明】 圖一 A係為高打光角度之光源投射至影像感測晶片上之瑕疵之 光徑反射示意圖。 圖一 B係為低打光角度之光源投射至影像感測晶片上之瑕疵之 鲁光徑反射示意圖。 圖二係為高低打光角度投射至影像感測晶片上之微稜鏡之光 徑示意圖。 圖三A係為本創作影像感測晶片表面檢測用之打光裝置之第一 較佳實施例示意圖。 圖三B係為本創作影像感測晶片表面檢測用之打光裝置之第一 • 較佳實施例之分光調整部示意圖。 •圖三C係為本創作影像感測晶片表面檢測用之打光裝置之第一 較佳實施例之分光調整部剖面立體示意圖。 11 M285030 : 圖四係為本創作影像感測晶片表面檢測用之打光裝置之第二 較佳實施例示意圖。 圖五A、圖五B係為本創作之第一較佳實施例先徑示意圖。 【主要元件符號說明】 1_影像感測晶片 ^ 11-微棱鏡 12-瑕庇微棱鏡 • 13-間隙 2 -打光裝置 2卜環型光源體 210-發光二極體 22- 分光調整部 221-環型檔光板 2210- 中空區域 2211- 檔光板體 • 222-環型反射柱 2221- 侧壁 2222- 環型反射曲面 2223- 中空區域 23- 環型受光面 24- 出光口 • 3-打光裝置 • 31 -光源部 32-分光調整部 12 M285030 • 321-遮光體 322 -光反射體 33-出光口 4-污染微粒 8-觀測者 9 0 -光源 91- 高打光角度入射光 92- 低打光角度入射光 # 94-入射光 95-低入射角入射光 0 -爽角The main purpose of the present invention is to provide a light-receiving device for image sensing wafer surface detection, which provides a light source for converting a projected light source from a high incident angle to a low angle, and an angle-of-light splitting portion for projecting a light source onto image sensing. On the wafer, the background image and the ratio of 瑕(4) are achieved. The long-term objective is to provide an image sensing wafer surface for detecting the penetrating angle of the human eye. The system provides a light source for converting the projected light source from a high incident angle to a low-spot light splitting adjustment portion to project the light source onto the image sensing wafer. In order to achieve the above purpose, the author aims to improve the image processing time and achieve the purpose of shortening the image processing time. The present invention provides a light sensing device for image sensing wafer table 3, which can be projected. The light source is disposed on one of the image sensing residual wafers on the detection platform, and the light sensing device for detecting the surface of the image sensing wafer comprises a light source portion and a light splitting adjustment portion. The light source portion can project the light source in the light splitting adjustment portion. The spectroscopic adjustment unit is configured to receive the light source and reflect the light source, and to project the image sensing wafer via at least the light emission Q. The spectroscopic adjustment 4 further includes a light shielding body located at the light source. And the image sensing wafer to prevent the light source from directly projecting onto the image sensing wafer; and a light reflector that can guide the light source to be projected onto the image Preferably, the light-shielding system is a light-shielding body. Preferably, the light-reflecting system is a mirror. Preferably, the light source part is a self-priming light. Preferably, the light source part is a plurality of light emitting diodes. Preferably, the light shielding system is a ring shaped light plate, and the central hollow area of the annular light plate is placed on the image sensing chip. The light-guiding plate body of the annular light-guiding plate surrounds the periphery of the image-sensing wafer, and the at least one light-emitting port is further disposed on a side of the light-blocking plate of the annular light-plate. The light reflecting system is an annular reflecting column, and the annular reflecting column has a hollow area for accommodating the bad light blocking plate and an annular reflecting curved surface, and the annular reflecting curved surface forms an annular light receiving surface with the annular light shielding plate. Preferably, the light source portion is a ring-shaped light source body that can be sleeved on the annular light receiving surface. Preferably, the at least one light exiting port is formed by a space region between the light blocking body and the light reflecting body. . Preferably, the at least one light exit opening is formed on a wall surface of the light shielding body adjacent to one side of the image sensing wafer. [Embodiment] In order to enable the reviewing committee to further improve the features, purposes and functions of the present creation. Cognition and understanding, the following is a detailed description of the detailed structure of the device and the concept of the design, so that the reviewer can understand the characteristics of the creation. The detailed statement is as follows: • Please refer to Figure 1A and Figure IB. In the figure, FIG. 1A is a schematic diagram of the light path reflection of the light source of the high illumination angle and the light source projected onto the image sensing wafer; FIG. 1B is a light source with a low light angle projected onto the image sensing wafer. Schematic diagram of the light path reflection. From these two figures, you can understand the effect of the high incident angle of light and the low incident angle of 7 M285030 on the image. As shown in Figure A, the incident light 91 is projected to There is no difference in the light-reducing technique when the micro-twist 12 of the wafer 1 or the normal micro-turn 11 is sensed, so that the high-lighting angle causes the micro-twist 12 and the normal prism 11 to be generated. The image contrast is almost indistinguishable by the observer 8. • In Fig. 1B, when the low-lighting angle incident light 92 enters the micro-twist 12 of the image-sensing crystal-chip 1 or the normal micro-turn 11 , the reflected light path is There is a significant difference between 稜鏡12 and the normal microprism u. When there is a normal reflected light, there is a clear reflection light, and there is no obvious reflected light on the 瑕疵12, so the micro-edge can be increased. The contrast between the mirror 12 and the normal microprism 11 image is recognized by the observer 8. In FIG. 1A and FIG. 1B, although the high-lighting angle incident light μ and the low-lighting incident light 92 have no difference in the reflected brightness of the contaminating particles 4, as shown in FIG. 1, when the low-lighting angle is incident The reflection angle of the light 92 projected onto the normal micro-turn 11 is not as large as the reflection angle of the high-light-angle incident light 92 projected onto the normal micro-slip 11 in FIG. 1A, so the high-angle illumination is performed. The background brightness is high, and the low-angle lighting background brightness is low, which makes the difference between the contaminated spring particle 4 image and the background image more prominent. As shown in FIG. 2, the figure is a light control schematic diagram of a micro-brightness projected onto the image sensing wafer at a high and low lighting angle. The low-lighting angle incident light 92 produces a lower amount of reflection on the micro-turn I! in the direction of observation, and the large amount of the transmitted refracted light is incident on the gap 13' of the micro-turn, thereby effectively reducing the structurality generated by the micro-iridium array. The feature " (the image of the micro-array) highlights the image features of the defect. On the contrary, due to the high hitting angle, the incident light 91 of the light angle generates a relatively high amount of reflection on the microprism 11, and instead, it reduces the contrast between the micro cymbal and the cymbal, which is unfavorable for image recognition. Combining the above, it can be found that the incident light source with a low incident angle greatly contributes to the detection rate of image detection. Please refer to FIG. 3A, which is a schematic diagram of a first preferred embodiment of a light-emitting device for image sensing wafer surface inspection. The lighting device 2 can project a light source onto the image measuring wafer 1 placed on the platform. The light-emitting device 2 includes a ring-shaped light source body 21 and a light-splitting adjusting portion 22. The ring-shaped light source body 21 can project a light source 9A. In the present embodiment, the ring-shaped light source body 21 is composed of a plurality of light-emitting diodes 21A. In addition, the light-emitting element of the annular light source body 21 can also be selected as a halogen lamp. Please refer to FIG. 3B and FIG. 3C, wherein FIG. 3B is a schematic diagram of the spectroscopic adjustment part of the first preferred embodiment of the polishing apparatus for detecting the surface of the image sensing wafer; FIG. A cross-sectional perspective view of a spectroscopic adjustment portion of a first preferred embodiment of the polishing device for detecting a surface of a wafer. The spectroscopic adjustment portion 22 includes a ring-shaped light blocking plate 221 and a ring-shaped reflecting column 222. The central hollow region 2210 of the annular light barrier 221 is disposed above the image sensing wafer 1 such that the light barrier body 2211 of the annular light barrier 221 surrounds the periphery of the image sensing wafer 1. The annular reflective column 222 has a hollow region 2223 for receiving the annular light barrier 221 and an annular reflective curved surface 2222. The annular reflective curved surface 2222 is at an angle θ with the horizontal plane to reflect the concentrated light from the spring exit port 24 ( As shown in FIG. 3A, an annular light-receiving surface 23 is formed between the annular reflective curved surface 2222 and the annular light barrier 221 . At least one light exit port 24 is further disposed on a side of the light-guiding plate body 2211 of the annular light-guiding plate 221 adjacent to the image sensing wafer 1. In this embodiment, four light exit ports 24, 24a, and 24b are provided, and a fourth light exit port (not shown) is disposed on the opposite side of the light exit port 24. Returning to Fig. 3A, the ring-shaped light source body 21 can be disposed on the ring-shaped light-receiving surface 23. Referring to FIG. 4, the figure is a schematic view of a second preferred embodiment of the polishing device for detecting the surface of the image sensing wafer. The light-receiving device can project a light source onto one of the image sensing wafers disposed on the detecting platform. The light-emitting device 3 includes 9 M285030, a light source portion 31 and a light splitting portion %. The light source unit 31 can project a light source 90. In the tenth embodiment, the light source unit 31 can be selected as a light emitting diode or a light source such as a halogen lamp. The spectroscopic adjustment unit 32 is configured to receive the light source 90 and focus the light source 90 on the image sensing wafer cassette via the at least one light exiting port 33. The sub-light adjusting unit 32 further includes: A light blocking body 321 and a light reflecting body 322. The light shielding body 321 is located between the light source portion 31 and the image sensing wafer, and the light shielding body 321 prevents the light source 90 from directly projecting onto the image sensing wafer 1. In the embodiment, the light shielding body The 321 series is a visor body. The light reflector 322 can guide the light source to be projected onto the image sensing wafer 1. . In the present embodiment, the light reflector 322 is a mirror which is at an angle of zero to the horizontal. The at least one light exiting opening 33 is formed by a space region between the light shielding body 321 and the light reflecting body 322, or is formed on a wall surface of the light shielding body 321 which is close to one side of the image sensing wafer 1. Please refer to FIG. 5A and FIG. 5B, which is a schematic diagram of the light path of the first preferred embodiment of the present invention. It can be seen from Fig. 5A that the incident light 94 generated by the light source 90 emitted from the ring-shaped light source body 21 is reflected to the light exit port 24 via the ring-shaped reflective curved surface 2222 having a reflection and concentration effect. In order to prevent the light source 90 from directly illuminating the image sensing wafer 1, causing the contrast to be reduced and affecting the image judgment, the ring type light blocking plate 221 is disposed, and the light shielding plate body 2211 can isolate the light source 90 to cause the light source 90 to be incident. The light 94 exits the light exit port 24 and is projected onto the image sensing wafer 1 to produce an image of the background and the contrast of the image for viewing by the viewer 8. The light exit port 24 is formed on the soil type light plate 221, and can be opened according to the situation to control the better light-lighting effect. As shown in FIG. 5B, in the embodiment, four light-emitting ports are provided, so that The incident light 95 incident at a low incident angle emitted from the light exit port can be projected onto the image sensing crystal M285030, so that the image 瑕疵, for example, γ, y ^, j, such as π dyed particles 4, can be clearly displayed. Only those who are said to be the only ones of this creation are expected to limit the creation (4). That is to say, the equal changes made by the applicants in accordance with the scope of the patent application for this creation and the decoration will still not lose the essence of the creation, and will not deviate from the spirit and scope of the creation, so it should be regarded as the further implementation of the creation. • Combining the above-mentioned 'this creation can meet the needs of the industry and improve the competitiveness of the industry because of its enhanced background and contrasting advantages. We have already met the requirements for the creation of the application as required by the Creative Patent Law. To file an application for the creation of a patent in accordance with the law, please ask your review board to allow time for review and grant the patent as a prayer. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic diagram of light path reflection of a light source with a high light-illumination angle projected onto an image sensing wafer. Figure 1 B is a schematic diagram of the Lu light path reflection of a light source with a low light angle projected onto the image sensing wafer. Figure 2 is a schematic diagram showing the light path of the micro-brightness projected onto the image sensing wafer at high and low lighting angles. Fig. 3A is a schematic view showing a first preferred embodiment of the polishing device for detecting the surface of the image sensing wafer. Figure 3B is a schematic view of the first light splitting adjustment portion of the preferred embodiment of the light-emitting device for image sensing wafer surface inspection. Fig. 3C is a perspective view showing a cross section of the spectroscopic adjustment portion of the first preferred embodiment of the polishing apparatus for detecting the surface of the wafer for image sensing. 11 M285030: FIG. 4 is a schematic view of a second preferred embodiment of the polishing device for detecting the surface of the image sensing wafer. FIG. 5A and FIG. 5B are schematic diagrams showing the first preferred embodiment of the present invention. [Description of main component symbols] 1_Image sensing wafer ^ 11 - Microprism 12 - 微 微 microprism • 13-Gap 2 - Light illuminating device 2 Circulating light source body 210 - Light emitting diode 22 - Light modulating portion 221 -Ring type light plate 2210- Hollow area 2121 - Light plate body • 222-ring type reflection column 2221 - Side wall 2222 - Ring type reflection surface 2223 - Hollow area 23 - Ring type light receiving surface 24 - Light exit port - 3-lighting Device • 31 - Light source unit 32 - Spectroscopic adjustment unit 12 M285030 • 321 - Light shield 322 - Light reflector 33 - Light exit port 4 - Contaminant particles 8 - Observer 9 0 - Light source 91 - High illumination angle Incident light 92 - Low Lighting angle incident light #94-incident light 95-low incident angle incident light 0 - cool angle