M348327 八、新型說明： 【新型所屬之技術領域】 本創作係有關一種晶圓晶片檢測計數裝置結構，特別 是一種可用以檢測一晶圓上晶片及不良晶片之數量及位 置之裝置結構。 【先前技術】 * 電子產業在產品產出後需要對其產品進行檢測及計 數之工作，晶圓上之晶片數量動辄數萬，很難以人力方式 進行，所以有晶片檢測計數裝置之需求產生。 現行之晶片檢測計數裝置結構主要是以下述方式設 計之：包括一腔室，在此腔室内設有一平台，用以放置為 數眾多晶片所構成之晶圓；在腔室内且在此平台上設置一 光源，該光源向平台上方發射一光線，晶圓放置於該光源 _ 上方，該光線穿過晶圓向晶圓上方射出；在腔室内且位於 . 晶圓上方設置一攝影裝置，用以接收穿過晶圓之光線所構 成之影像，並且轉換為一影像數據資料傳輸出去，攝影裝 置連接一運算處理裝置，用以接收此影像數據資料並且將 其處理轉換成晶圓上可用晶片數量之數據。 此種方式設計之晶片檢測計數裝置對於已經過切 割、擴張面積之晶圓，有很好的檢測計數效果，因為經過 切割、擴張面積之晶圓，晶圓上之每一晶片皆以分離，每 5 M348327 一晶片之間皆有一段距離之間格，光源由晶圓下方向上照 射時，架設於晶圓上方之攝影裝置可看見由一個個晶片獨 立分離的區塊所構成之影像，經由電腦程式之處理，很容 易就得到晶圓上可用晶片之數量。 但上述之晶片檢測計數裝置對於未經切割之晶圓，就無法 有檢測計數效果，因為架設於晶圓上方之攝影裝置僅能看 見一整個晶圓之暗投影，無法看見晶圓上之一個個晶片， 因此有本創作之需求產生。M348327 VIII. New Description: [New Technology Field] This creation is about a wafer wafer inspection and counting device structure, especially a device structure that can be used to detect the number and position of a wafer on a wafer and a defective wafer. [Prior Art] * The electronics industry needs to test and count its products after the products are produced. The number of wafers on the wafer is tens of thousands, which is difficult to carry out by human resources. Therefore, there is a demand for wafer inspection and counting devices. The current wafer inspection and counting device structure is mainly designed in the following manner: including a chamber in which a platform is disposed for placing a wafer composed of a plurality of wafers; and a chamber is disposed in the chamber and on the platform a light source that emits a light above the platform, the wafer being placed above the light source_, the light passing through the wafer to the top of the wafer; and a photographic device disposed above the wafer for receiving the light through the wafer The image formed by the light of the wafer is converted into an image data material for transmission, and the photographing device is connected to an arithmetic processing device for receiving the image data and converting the processing into data of the number of available wafers on the wafer. The wafer inspection and counting device designed in this way has a good detection and counting effect on the wafer which has been cut and expanded, because each wafer on the wafer is separated by a wafer that has been cut and expanded. 5 M348327 There is a distance between the wafers. When the light source is irradiated upward from the bottom of the wafer, the photographic device mounted above the wafer can see the image formed by the separate blocks of the wafer. The processing makes it easy to get the number of available wafers on the wafer. However, the above-mentioned wafer detecting and counting device cannot detect and count the uncut wafer, because the photographic device mounted above the wafer can only see the dark projection of one entire wafer, and cannot see one on the wafer. The chip, therefore, has the need for this creation.
M348327 【新型内容】 本創作之主要目的係在提供新型的一種晶片檢測計 數裝置結構’解決習用技術無法對未經過切割、擴張面積 之晶圓進行檢測計數的困難。 本創作之裝置結構包括：一腔室，在此腔室内設有一 平台’用以放置複數晶片所構成之晶圓，在腔室内且在此 平台上方設置一比例透光反射板，此比例透光反射板與平 台呈傾斜姿態；在腔室内且在此平台一端設置一第一光 源，該第一光源發射第一光線至比例透光反射板再反射成 為第二光線射至晶圓上，該晶圓之每一晶狀射第二光線 成為第一光線，第二光線穿過比例透光反射板後向晶圓上 方射出’平台内設置一第二光源，該第二光源發射第四光 線’第四光線被晶圓30遮蔽一部份後，向晶圓3〇上方射 出’·=腔室内且位於晶圓上方設置—感光攝影裝置，用以 接收每-晶片所反射之第三光線及或第四光線並且轉換 為-數據資料傳輸出去，將感光攝影裝置連接—運算處理 裝置’用以接收此數據資料並且將其處理轉換成晶片及不 良晶片之位置數量數據。 以下’參照圖式’說明本創作之實際方^。又，本創 作係不因以下之實際方式的說明内容而限定申請 圍之範疇者。 7 M348327 【實施方式】 本創作係一種晶片檢測計數裝置結構，參照第一圖所 ， 示’本創作之晶片檢測計數裝置結構包括：一腔室10， ，此腔室10係由複數面不透光材質製作之腔室牆壁11及 12所包圍，腔室牆壁至少一面12為活動方式組合，可以 隨時打開或關閉，以方便設置於腔室内之其他物件之操 作，腔室牆壁遮蔽大部份外界光線，腔室牆壁u及12之 内面塗佈黑色霧面漆料，使之具備避免反射光線之性質； 在此腔室内設有一平台20，用以放置晶圓30，晶圓3〇由 複數晶片31所構成；平台20上方設置一比例透光反射板 40，此比例透光反射板與平台呈傾斜姿態，其間之夾角角 度為四十五度，此比例透光反射板係為玻璃經由光學鍍層 處理後，達到光線照射時一半穿透一半反射之效果；平台 _ 20 —端21設置一第一光源5〇，此第一光源5〇係為以冷 '陰極螢光燈、導光板及霧化、擴散元件所組成之平面光 . 源，此種平面光源常見用於液晶螢幕之背光源；此第—光 源50發射第一光線51至比例透光反射板4〇再反射成為 第二光線52射至晶圓30上，此晶圓3〇之每一晶片“反 射第二光線52後成為第三光線53，第三光線53穿過比 例透光反射板40後向晶圓3〇上方射出。 腔至10内，平台20正上方，比例透光反射板4〇之 上方H感光攝影裝置6Q ’此感光攝影裝置6〇係由 8 M348327 一鏡頭61及互補式金屬氧化半導體影像感應器62 (CMOS image sensor)所構成，其中互補式金屬氧化半導體影像 感應器亦可以電荷藕合元件（C C D)或其它具有將光強度轉 換為電氣訊號之裝置或元件取代之；鏡頭61可以是一固 定焦距鏡頭，也可是一可調焦距鏡頭；該感光攝影裝置 60安置於一位置調整座63上，該位置調整座63能延著 一位置調整導柱64調整與平台20之距離，即為調整感光 攝影裝置60與平台20之距離，藉以調整感光攝影裝置 60之攝像面積，如果該鏡頭61是一可調焦距鏡頭，則可 以直接調整鏡頭焦距，以調整該感光攝影裝置60之攝像 面積，不需調整感光攝影裝置60與平台20之距離亦能調 整感光攝影裝置60之攝像面積；由晶片31反射之第三光 線53，在穿過比例透光反射板40後射至感光攝影裝置 60，經由鏡頭61成像於互補式金屬氧化半導體影像感應 器62上，再由互補式金屬氧化半導體影像感應器62轉換 成影像數據資料；感光攝影裝置60與運算處理裝置連 接，運算處理裝置係為一電腦，内含運算處理程式；感光 攝影裝置60將影像數據資料傳送至運算處理裝置後，運 算處理轉換成晶片及不良晶片之位置數量數據。 又，本創作之實施方式中，平台20内設置一第二光 源21，第二光源21係為以冷陰極螢光燈、導光板及霧化、 擴散元件所組成之平面光源，此第二光源21發射第四光 9 M348327 線22 ’第四光線22被晶圓30遮蔽一部份後，向晶圓30 上方射出，在穿過比例透光反射板40後射至感光攝影裝 置60 ’經由鏡頭61成像於互補式金屬氧化半導體影像感 應器62上’再由互補式金屬氧化半導體影像感應器62轉 換成影像數據資料；感光攝影裝置60與運算處理裝置連 接，運算處理裝置係為一電腦，内含運算處理程式；感光M348327 [New Content] The main purpose of this creation is to provide a new type of wafer inspection and counting device structure. It is difficult to solve the problem that the conventional technology cannot detect and count the uncut, expanded area of the wafer. The device structure of the present invention comprises: a chamber in which a platform is disposed to hold a wafer composed of a plurality of wafers, and a proportional light-transmissive reflector is disposed in the chamber and above the platform, the ratio is transparent. The reflector and the platform are in an inclined posture; a first light source is disposed in the chamber and at one end of the platform, the first light source emits the first light to the proportional light-transmissive reflector and is reflected to become a second light and is incident on the wafer, the crystal Each of the circles emits a second light into a first light, and the second light passes through the proportional light-transmissive reflector and then exits the wafer. A second light source is disposed in the platform, and the second light source emits a fourth light. After the four rays are shielded by the wafer 30, the photodetection device is disposed above the wafer 3 and is disposed above the wafer to receive the third light reflected by each wafer and/or The four rays are converted to data data for transmission, and the photosensitive camera device is connected to the arithmetic processing device for receiving the data data and converting the processing into the position quantity data of the wafer and the defective wafer. The following is a description of the actual method of the creation. In addition, this creation does not limit the scope of the application due to the description of the following actual methods. 7 M348327 [Embodiment] The present invention relates to a structure of a wafer detecting and counting device. Referring to the first figure, the structure of the wafer detecting and counting device of the present invention comprises: a chamber 10, which is not transparent to the plurality of faces. The chamber walls 11 and 12 are made of light material, and at least one side 12 of the chamber wall is movable and can be opened or closed at any time to facilitate the operation of other objects disposed in the chamber, and the chamber wall shields most of the outside world. The light, the inner surface of the chamber walls u and 12 are coated with a black matte finish to protect the light from reflection; a platform 20 is provided in the chamber for placing the wafer 30, the wafer 3 is composed of a plurality of wafers 31 is configured; a proportional light-transmissive reflector 40 is disposed above the platform 20, and the ratio of the transparent reflector is inclined to the platform, and the angle between the angles is 45 degrees. The ratio of the transparent reflector is glass through the optical coating. After the treatment, half of the reflection of the half is reflected when the light is irradiated; the platform _ 20 - the end 21 is provided with a first light source 5 〇, which is a cold 'cathode fluorescent lamp, A planar light source composed of a light plate and an atomizing and diffusing element. The planar light source is commonly used for a backlight of a liquid crystal screen; the first light source 50 emits the first light 51 to the proportional light-transmitting reflector 4 and then reflects The second light 52 is incident on the wafer 30. Each of the wafers 3 "reflects the second light 52 and becomes the third light 53. The third light 53 passes through the proportional light-transmissive reflector 40 and is then directed to the wafer 3. The upper part is shot out. The cavity is up to 10, directly above the platform 20, above the proportional light-transmissive reflector 4〇H photosensitive camera 6Q' This photosensitive camera 6 is made of 8 M348327 lens 61 and complementary metal oxide semiconductor image sensor 62 (CMOS image sensor), wherein the complementary metal oxide semiconductor image sensor can also be replaced by a charge-coupled component (CCD) or other device or component having a light intensity converted into an electrical signal; the lens 61 can be a fixed The focal length lens is also an adjustable focal length lens; the photosensitive imaging device 60 is disposed on a position adjusting seat 63, and the position adjusting seat 63 can adjust the distance from the platform 20 by a position adjusting guide column 64. That is, the distance between the photosensitive imaging device 60 and the platform 20 is adjusted, thereby adjusting the imaging area of the photosensitive imaging device 60. If the lens 61 is an adjustable focal length lens, the lens focal length can be directly adjusted to adjust the imaging of the photosensitive imaging device 60. The area of the photosensitive imaging device 60 can be adjusted without changing the distance between the photosensitive imaging device 60 and the platform 20; the third light 53 reflected by the wafer 31 is incident on the photosensitive imaging device after passing through the proportional transparent reflecting plate 40. 60, formed on the complementary metal oxide semiconductor image sensor 62 via the lens 61, and then converted into image data by the complementary metal oxide semiconductor image sensor 62; the photosensitive imaging device 60 is connected to the arithmetic processing device, and the arithmetic processing device is A computer includes an arithmetic processing program; after the photosensitive imaging device 60 transmits the image data to the arithmetic processing device, the arithmetic processing converts the position data into a wafer and a defective wafer. Moreover, in the embodiment of the present invention, a second light source 21 is disposed in the platform 20, and the second light source 21 is a planar light source composed of a cold cathode fluorescent lamp, a light guide plate, and an atomizing and diffusing element. 21 emits the fourth light 9 M348327 line 22 'the fourth light 22 is partially shielded by the wafer 30, and then is emitted above the wafer 30, and passes through the proportional light-transmitting reflector 40 to be incident on the photosensitive device 60' via the lens The image is formed on the complementary metal oxide semiconductor image sensor 62 and then converted into image data by the complementary metal oxide semiconductor image sensor 62. The photosensitive imaging device 60 is connected to the arithmetic processing device, and the arithmetic processing device is a computer. With arithmetic processing program;
攝影裝置60將影像數據資料傳送至運算處理裝置後，運 算處理轉換成晶片及不良晶片之位置數量數據。 本創作之實施方式，藉由選擇開啟或關閉第一光源 50及第二光源21 ’可得到三種組合方式，感光攝影裝置 60接收到的光線可以是只有第三光線53或只有第四光線 22或同時有第三及第四光線，利用此種組合方式，以及 調整第-光源50及第二光源22之發光強度，可以產 多不同的效果。 惟以上所述之實施例僅為本創作之較佳實施例，藉^ 實際例說明本創作之特點，其目的在使熟悉該技藝者_ 解本創作之内容並據以實施，並非用以局限本創作 圍。舉凡運用本創作之φ往 々 $l 叫專利乾圍之構造、特徵及精和 所為之均專變化及修飾，皆 圍内。 白應匕括於本創作申請專利之範 M348327 【圖式簡單說明】 第一圖為本創作之立體示意圖 第二圖為本創作於去除腔室牆壁後之立體示意圖 第三圖為本創作之光線路線示意圖 【主要元件符號說明】 10 腔室 • 11以固定方式組合之腔室牆壁 12 以活動方式組合之腔室牆壁 20 平台 21 第二光源 22 第四光線 30 晶圓 31 晶片 40 比例透光反射板 • 50 第一光源 ' 51 第一光線 • 52 第二光線 53 第三光線 60 感光攝影裝置 61 鏡頭 62 互補式金屬氧化半導體影像感應器 11The photographing device 60 transfers the image data to the arithmetic processing unit, and the arithmetic processing converts the position data into the wafer and the defective wafer. In the implementation of the present invention, three combinations of the first light source 50 and the second light source 21' can be selected by turning on or off, and the light received by the photosensitive imaging device 60 can be only the third light 53 or only the fourth light 22 or At the same time, there are third and fourth light rays, and by using such a combination method and adjusting the luminous intensity of the first light source 50 and the second light source 22, different effects can be produced. However, the embodiments described above are only preferred embodiments of the present invention, and the features of the present invention are described by way of actual examples, and the purpose thereof is to make the content of the authors familiar with the art and implement it according to the present invention, and is not intended to be limited. This creation is around. Any use of this creation of φ 々 $l is called the structure, characteristics and fineness of the patented dry circumference. Bai Yingwei is included in the patent application for this creation. M348327 [Simple description of the drawing] The first picture is the three-dimensional schematic diagram of the creation. The second picture is the three-dimensional diagram of the creation after removing the wall of the chamber. Route diagram [Main component symbol description] 10 Chambers • 11 chamber walls fixedly combined 12 Chamber walls 20 in a movable manner Platform 21 Second light source 22 Fourth light 30 Wafer 31 Wafer 40 Proportional light reflection Board • 50 First Light Source ' 51 First Light • 52 Second Light 53 Third Light 60 Photographic Camera 61 Lens 62 Complementary Metal Oxide Semiconductor Image Sensor 11